Movatterモバイル変換


[0]ホーム

URL:


CN108732870A - A method of it measuring silicon chip and puts into reproducibility - Google Patents

A method of it measuring silicon chip and puts into reproducibility
Download PDF

Info

Publication number
CN108732870A
CN108732870ACN201810386139.2ACN201810386139ACN108732870ACN 108732870 ACN108732870 ACN 108732870ACN 201810386139 ACN201810386139 ACN 201810386139ACN 108732870 ACN108732870 ACN 108732870A
Authority
CN
China
Prior art keywords
test
silicon wafer
silicon chip
measuring
chip input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810386139.2A
Other languages
Chinese (zh)
Other versions
CN108732870B (en
Inventor
王朝辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Microelectronics Corp
Original Assignee
Shanghai Huali Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Microelectronics CorpfiledCriticalShanghai Huali Microelectronics Corp
Priority to CN201810386139.2ApriorityCriticalpatent/CN108732870B/en
Publication of CN108732870ApublicationCriticalpatent/CN108732870A/en
Application grantedgrantedCritical
Publication of CN108732870BpublicationCriticalpatent/CN108732870B/en
Activelegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

Links

Classifications

Landscapes

Abstract

The invention discloses a kind of method that measurement silicon chip puts into reproducibility, the installation position using adjustment adjustment location and test badge makes test silicon wafer avoid contacting with liquid flood zone, achievees the purpose that without being coated with waterproof coating in test silicon wafer.Technical scheme of the present invention avoids the test badge on silicon chip and is depleted, and improves the accuracy of measurement, extends the service life of test silicon wafer.

Description

A method of it measuring silicon chip and puts into reproducibility
Technical field
The present invention relates to litho machine debugging field more particularly to a kind of methods for measuring silicon chip and putting into reproducibility.
Background technology
With the development of microelectric technique, the utilization of liquid immersion type litho machine is increasingly frequent.Liquid immersion type litho machine is carrying out lightBetween carving operation, the properties to liquid immersion type litho machine are needed to be tested to ensure the precision of photoetching process.Wherein, siliconThe stability requirement that piece transmits position in conveyer system is higher, is reproduced it is then desired to be put into the silicon chip of liquid immersion type litho machineProperty tested, to ensure in a lithographic process silicon chip can be transferred into designated position without there is the deviation of position.
In the existing method for measuring silicon chip input reproducibility, since there are liquid for the lithographic projection region of liquid immersion type litho machineImmersion causes test silicon wafer that can soak with liquid and contacts.To prevent liquid immersion side leakage, therefore it is required for testing before measurement every timeIt is coated with one layer of waterproof coating on silicon chip, and waterproof coating is removed using wet-cleaning after measurement.But existing surveyIn examination scheme, since test silicon wafer needs repeatedly to measure repeatedly to obtain reproducibility data, number is measured at 30 times or more, therefore anti-The time of water coating layer touch liquid immersion is longer, easy tos produce peeling, and then plugging fluid immersion nozzle.Meanwhile base after measuring every timeEka-silicon piece is required for removing waterproof coating using wet-cleaning, causes the alignment mark etched on silicon chip to be depleted, reduction amountThe accuracy of survey shortens the service life of test silicon wafer.
According to Fig.2, test silicon wafer 1 is in contact with liquid flood zone 3, measures the marked region 5 that camera lens measures and is arrangedAt the middle part of test silicon wafer 1, the position due to measuring camera lens be it is fixed cause, test silicon wafer 1 unavoidably with view field 4In liquid flood zone 3 contact, so as to cause above-mentioned the defects of existing testing scheme.
Invention content
For the above-mentioned problems in the prior art, a kind of method of measurement silicon chip input reproducibility is now provided.
Specific technical solution is as follows:
A method of it measuring silicon chip and puts into reproducibility, apply in liquid immersion type litho machine, include the following steps:
Step S1:A test silicon wafer is provided, in test badge is arranged in the test silicon wafer;
Step S2:The test silicon wafer is positioned in the conveyer system of the liquid immersion type litho machine;
Step S3:The test silicon wafer is sent to by adjustment location using the conveyer system, is located at the adjustment locationThe test silicon wafer do not contacted with the liquid flood zone of the liquid immersion type litho machine;
Step S4:It uses label measuring equipment to carry out position to the test badge to measure to obtain one group of test data;
Step S5:The test silicon wafer is removed by the adjustment location using the conveyer system;
Step S6:Judge whether the quantity of the test data meets preset quantity required;
If so, entering step S7;If it is not, then return to step S3;
Step S7:All test datas are calculated, the test result of silicon chip input reproducibility is obtained.
Preferably, the liquid flood zone is arranged at the middle part of the view field of the liquid immersion type litho machine.
Preferably, the adjustment location is generally aligned in the same plane with the view field.
Preferably, the test silicon wafer and the view field for being located at the adjustment location are overlapped.
Preferably, the test badge is set to the test silicon wafer when positioned at the adjustment location close to the immersionThe side in region.
Preferably, in the step S4, the label measuring equipment includes a measurement camera lens, and the measurement camera lens is to describedThe marked region of test silicon wafer is tested.
Preferably, the marked region is a square region.
Preferably, the test badge includes multiple mark points.
Preferably, each mark point is arranged in the marked region.
Preferably, the test data is the offset of test badge and normal place;
In the step S7, uses and calculate the average value of the test data to obtain the test result.
Above-mentioned technical proposal has the following advantages that or advantageous effect:
Installation position using adjustment adjustment location and test badge makes test silicon wafer avoid contacting with liquid flood zone,Achieve the purpose that without being coated with waterproof coating, to avoid the test badge on silicon chip from being depleted, raising amount in test silicon waferThe accuracy of survey extends the service life of test silicon wafer.
Description of the drawings
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate andIt illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is a kind of flow chart for measuring silicon chip and putting into the embodiment of the method for reproducibility of the present invention;
Fig. 2 is the floor map for carrying out silicon chip in the prior art and putting into reproducibility test;
Fig. 3 is a kind of floor map for measuring silicon chip and putting into the embodiment of the method for reproducibility of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, completeSite preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based onEmbodiment in the present invention, those of ordinary skill in the art obtained under the premise of not making creative work it is all itsHis embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phaseMutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
In a kind of preferred embodiment of the present invention, according to Fig. 1, a method of it measuring silicon chip and puts into reproducibility, fortuneFor in liquid immersion type litho machine, including the following steps:
Step S1:A test silicon wafer is provided, in test badge is arranged in test silicon wafer;
Step S2:Test silicon wafer is positioned in the conveyer system of liquid immersion type litho machine;
Step S3:Test silicon wafer is sent to by adjustment location using conveyer system, be located at adjustment location test silicon wafer withThe liquid flood zone of liquid immersion type litho machine does not contact;
Step S4:It uses label measuring equipment to carry out position to test badge to measure to obtain one group of test data;
Step S5:Test silicon wafer is removed by adjustment location using conveyer system;
Step S6:Judge whether the quantity of test data meets preset quantity required;
If so, entering step S7;If it is not, then return to step S3;
Step S7:All test datas are calculated, the test result of silicon chip input reproducibility is obtained.
Specifically, in the present embodiment, test silicon wafer is transmitted using conveyer system, in specified position to test siliconThe test badge of on piece measures, to obtain test data, by carrying out calculating final acquisition to the data repeatedly testedThe test result of reproducibility is put into silicon chip.
Using the setting to adjustment location, control test silicon wafer refuses the contact of liquid flood zone, avoids in test silicon waferWaterproof coating is set, the accuracy of the efficiency and test of the test of silicon chip input reproducibility is improved.
In a kind of preferred embodiment of the present invention, liquid flood zone is arranged in the view field of liquid immersion type litho machinePortion.
In a kind of preferred embodiment of the present invention, adjustment location is generally aligned in the same plane with view field.
Specifically, in the present embodiment, it is arranged in same plane using by adjustment location and view field, realizing will testSilicon chip puts into the operating process that reproducibility is put into silicon chip in actual etching process and is consistent, and there is only the areas of horizontal positionNot, to reach and the most similar test data of practical operation.
In a kind of preferred embodiment of the present invention, test silicon wafer and the view field for being located at adjustment location are overlapped.
Specifically, in the present embodiment, test silicon wafer and view field's position relationship are further defined so that test processWith practical operation more closely, avoiding contact of the liquid flood zone with test silicon wafer simultaneously, reach preferably test effect.
In a kind of preferred embodiment of the present invention, test badge is set to test silicon wafer when positioned at adjustment location close to leachingThe side of water area.
Specifically, in the present embodiment, test badge is arranged in the side of test silicon wafer so that when adjustment location is arrangedThe position between liquid flood zone and test silicon wafer is more easily controlled, avoids being arranged in test silicon wafer due to test badgePortion leads to not realize that liquid flood zone does not contact and mark measuring equipment spy to get test badge with test silicon wafer simultaneously.
In a kind of preferred embodiment of the present invention, in step S4, label measuring equipment includes a measurement camera lens, measures camera lensThe marked region of test silicon wafer is tested.
Specifically, in the present embodiment, using the image measured in camera lens acquisition test silicon wafer, and then judge test badge institutePosition.
In a kind of preferred embodiment of the present invention, marked region is a square region.
In a kind of preferred embodiment of the present invention, test badge includes multiple mark points.
Specifically, in the present embodiment, make to mark measuring equipment by comparing multiple mark points using multiple mark pointsTest, to get more accurate test data.
In a kind of preferred embodiment of the present invention, each mark point is arranged in marked region.
In a kind of preferred embodiment of the present invention, test data is the offset of test badge and normal place;
In step S7, use the average value for calculating test data to obtain test result.
In a kind of preferred embodiment of the present invention, according to Fig.3, test silicon wafer 1 is not overlapped with liquid flood zone 3Contact, since the marked region 5 and the position of liquid flood zone 3 that measure camera lens measurement are relatively fixed, by setting test badge 2It sets and is realized test silicon wafer 1 and view field 4 by adjusting adjustment location by the side through liquid flood zone 3, realizingLiquid flood zone 3 detaches, and relative to existing testing scheme shown in Fig. 2, technical scheme of the present invention solves test silicon wafer 1The technical issues of needing to smear waterproof coating.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection modelIt encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic contentEquivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.

Claims (10)

CN201810386139.2A2018-04-262018-04-26Method for measuring input reproducibility of silicon waferActiveCN108732870B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN201810386139.2ACN108732870B (en)2018-04-262018-04-26Method for measuring input reproducibility of silicon wafer

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN201810386139.2ACN108732870B (en)2018-04-262018-04-26Method for measuring input reproducibility of silicon wafer

Publications (2)

Publication NumberPublication Date
CN108732870Atrue CN108732870A (en)2018-11-02
CN108732870B CN108732870B (en)2020-12-25

Family

ID=63939376

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CN201810386139.2AActiveCN108732870B (en)2018-04-262018-04-26Method for measuring input reproducibility of silicon wafer

Country Status (1)

CountryLink
CN (1)CN108732870B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20050158673A1 (en)*2004-01-212005-07-21International Business Machines CorporationLiquid-filled balloons for immersion lithography
CN101258581A (en)*2005-09-092008-09-03株式会社尼康Exposure apparatus, exposure method, and device production method
CN101373337A (en)*2004-07-212009-02-25尼康股份有限公司Exposure method, device manufacturing method, substrate and manufacturing method thereof
CN103197506A (en)*2012-01-102013-07-10上海微电子装备有限公司Lithography machine using mirror image wafer stage
TWI467340B (en)*2004-07-212015-01-01尼康股份有限公司 An exposure method and an element manufacturing method, and a substrate and a manufacturing method thereof
CN104375395A (en)*2013-08-132015-02-25佳能株式会社Lithography apparatus, alignment method, and method of manufacturing article
CN106997159A (en)*2016-01-222017-08-01上海微电子装备有限公司Wafer pre-alignment mechanism, exposure device and exposure method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20050158673A1 (en)*2004-01-212005-07-21International Business Machines CorporationLiquid-filled balloons for immersion lithography
CN101373337A (en)*2004-07-212009-02-25尼康股份有限公司Exposure method, device manufacturing method, substrate and manufacturing method thereof
TWI467340B (en)*2004-07-212015-01-01尼康股份有限公司 An exposure method and an element manufacturing method, and a substrate and a manufacturing method thereof
CN101258581A (en)*2005-09-092008-09-03株式会社尼康Exposure apparatus, exposure method, and device production method
CN103197506A (en)*2012-01-102013-07-10上海微电子装备有限公司Lithography machine using mirror image wafer stage
CN104375395A (en)*2013-08-132015-02-25佳能株式会社Lithography apparatus, alignment method, and method of manufacturing article
CN106997159A (en)*2016-01-222017-08-01上海微电子装备有限公司Wafer pre-alignment mechanism, exposure device and exposure method

Also Published As

Publication numberPublication date
CN108732870B (en)2020-12-25

Similar Documents

PublicationPublication DateTitle
CN103713467B (en)A kind of method of mask plate group and using mask plate group detection alignment precision
TW200627088A (en)Lithographic apparatus and device manufacturing method
CN108845480A (en)Inner layer alignment precision measuring method
JP2003324133A (en) Planarization apparatus and method for obtaining planarity of probe card
TW201725394A (en)Probes with fiducial marks, probe systems including the same, and associated methods
EP1962140A3 (en)Lithographic apparatus immersion damage control
CN109307480A (en) A kind of multi-surface surface detection method of transmission element
CN102955378B (en)Photoresist morphology characterization method
CN110220461A (en)Embedded real-time detection method and device for identification point displacement measurement
CN103529659A (en)Alignment precision detection method and system
CN106324632A (en)Plant protection unmanned aerial vehicle accurate positioning method under control point-free conditions
CN106019860A (en)Determining method of alignment precision
CN108627104A (en)A kind of dot laser measurement method of parts height dimension
CN107607852A (en)The bearing calibration of the control method and positioning precision of the kinematic axis of flying probe tester
CN108333881A (en)A kind of splicing adjustment method applied to write-through exposure machine
CN105849658B (en)Calibration method for viscous fluid dispensing system
CN108732870A (en)A method of it measuring silicon chip and puts into reproducibility
WO2007102834A2 (en)Optically enhanced probe alignment
CN108982075A (en)Quantify the method for flexible screen body folding s tress
CN103235185A (en)Method for testing sheet resistance in preparation process of selective transmission electrode battery
CN111579011A (en)Walking type ADCP river flow testing method suitable for ultralow flow speed condition
NISHIOSimple evaluation of water permeability of cover-concrete using a Water Spray Method
CN203787419U (en)Testing structure used for detecting aligning deviation
CN104315997B (en)Device and method for marking detection data coordinate system in plane mirror detection
CN102591158A (en)Method for accurately measuring WEE (wafer edge exclusion) width

Legal Events

DateCodeTitleDescription
PB01Publication
PB01Publication
SE01Entry into force of request for substantive examination
SE01Entry into force of request for substantive examination
GR01Patent grant
GR01Patent grant

[8]ページ先頭

©2009-2025 Movatter.jp