技术领域technical field
本发明涉及一种发光元件与显示装置，尤其是涉及一种垂直式半导体发光元件与显示装置。The invention relates to a light-emitting element and a display device, in particular to a vertical semiconductor light-emitting element and a display device.
背景技术Background technique
发光二极管(light emitting diode，LED)或有机发光二极管(organic lightemitting diode，OLED)作为高效率的发光元件，被广泛的使用在各种领域。在发光二极管之中，有一种垂直式的发光二极管。垂直式的发光二极管的两个电极分别在发光二极管的两侧，以提高电子/电洞的迁移率。然而，出光侧电极的设置会降低出光侧的开口率，从而降低了出光率。Light emitting diodes (light emitting diodes, LEDs) or organic light emitting diodes (organic light emitting diodes, OLEDs), as high-efficiency light emitting elements, are widely used in various fields. Among light-emitting diodes, there is a vertical light-emitting diode. The two electrodes of the vertical light-emitting diode are on both sides of the light-emitting diode to improve the mobility of electrons/holes. However, the arrangement of the electrodes on the light-emitting side will reduce the aperture ratio of the light-emitting side, thereby reducing the light-emitting rate.
发明内容Contents of the invention
本发明所要解决的技术问题在于，针对现有技术的不足提供一种发光元件与应用此发光元件的显示装置。以减少出光侧电极的设置造成开口率下降的问题。The technical problem to be solved by the present invention is to provide a light-emitting element and a display device using the light-emitting element to address the shortcomings of the prior art. In order to reduce the problem of lowering the aperture ratio caused by the arrangement of the electrodes on the light-emitting side.
本发明所要解决的技术问题是通过如下技术方案实现的：The technical problem to be solved by the present invention is achieved through the following technical solutions:
依据本发明一实施例的发光元件，具有第一电极、第二电极与设置于第一电极与第二电极之间的磊晶结构。磊晶结构具有发光层，设置于发光层与第一电极间的第一型半导体层与设置于发光层与第二电极间的第二型半导体层。第二型半导体层的第一表面接触发光层，第二型半导体层的第二表面相对于第一表面，且第二表面具有至少一个凹陷。其中第二电极至少部分设置于至少一个凹陷中。A light emitting device according to an embodiment of the present invention has a first electrode, a second electrode, and an epitaxial structure disposed between the first electrode and the second electrode. The epitaxial structure has a light-emitting layer, a first-type semiconductor layer disposed between the light-emitting layer and the first electrode, and a second-type semiconductor layer disposed between the light-emitting layer and the second electrode. The first surface of the second-type semiconductor layer is in contact with the light-emitting layer, the second surface of the second-type semiconductor layer is opposite to the first surface, and the second surface has at least one depression. Wherein the second electrode is at least partially disposed in at least one recess.
依据本发明一实施例的显示装置，具有基板、第一电极连接层、第二电极连接层与多个发光元件。每个发光元件具有第一电极、第二电极与设置于第一电极与第二电极之间的磊晶结构。磊晶结构具有发光层、设置于发光层与第一电极间的第一型半导体层与设置于发光层与第二电极间的第二型半导体层。第二型半导体层的第一表面接触发光层，第二型半导体层的第二表面相对于第一表面，且第二表面具有至少一个凹陷。第二电极至少部分设置于至少一个凹陷中。A display device according to an embodiment of the present invention has a substrate, a first electrode connection layer, a second electrode connection layer, and a plurality of light emitting elements. Each light emitting element has a first electrode, a second electrode and an epitaxial structure disposed between the first electrode and the second electrode. The epitaxial structure has a light-emitting layer, a first-type semiconductor layer disposed between the light-emitting layer and the first electrode, and a second-type semiconductor layer disposed between the light-emitting layer and the second electrode. The first surface of the second-type semiconductor layer is in contact with the light-emitting layer, the second surface of the second-type semiconductor layer is opposite to the first surface, and the second surface has at least one depression. The second electrode is at least partially disposed in at least one recess.
换句话说，本发明提供一种发光元件，包括：一第一电极；一第二电极；以及一磊晶结构，设置于该第一电极与该第二电极之间，该磊晶结构包括：一发光层；一第一型半导体层，设置于该发光层与该第一电极间；以及一第二型半导体层，设置于该发光层与该第二电极间，且该第二型半导体层具有一第一表面与一相对于该第一表面的第二表面，该第一表面接触该发光层，该第二表面具有至少一凹陷；其中该第二电极至少部分设置于该至少一凹陷中。In other words, the present invention provides a light-emitting element, comprising: a first electrode; a second electrode; and an epitaxial structure disposed between the first electrode and the second electrode, the epitaxial structure comprising: a light-emitting layer; a first-type semiconductor layer disposed between the light-emitting layer and the first electrode; and a second-type semiconductor layer disposed between the light-emitting layer and the second electrode, and the second-type semiconductor layer Having a first surface and a second surface opposite to the first surface, the first surface contacts the light-emitting layer, the second surface has at least one depression; wherein the second electrode is at least partially disposed in the at least one depression .
进一步地，该至少一凹陷的深度与该第二型半导体层的厚度的比值大于0且小于等于0.4。Further, the ratio of the depth of the at least one recess to the thickness of the second-type semiconductor layer is greater than 0 and less than or equal to 0.4.
进一步地，该至少一凹陷的开口面积与该第二表面的一俯视面面积的比值大于等于0.01且小于等于0.5。Further, the ratio of the opening area of the at least one depression to the area of a plan view of the second surface is greater than or equal to 0.01 and less than or equal to 0.5.
进一步地，该至少一凹陷为多个凹陷，且多个所述凹陷有间隔地设置于该第二表面。Further, the at least one depression is a plurality of depressions, and the plurality of depressions are arranged on the second surface at intervals.
进一步地，该第二电极全部设置于该至少一凹陷中。Further, the second electrodes are all disposed in the at least one recess.
进一步地，该第二电极的一表面切齐于该至少一凹陷的开口。Further, a surface of the second electrode is aligned with the at least one recessed opening.
进一步地，该第二电极的一表面低于该至少一凹陷的开口。Further, a surface of the second electrode is lower than the at least one recessed opening.
进一步地，该磊晶结构的厚度不大于6微米。Further, the thickness of the epitaxial structure is not greater than 6 microns.
进一步地，该发光元件的最大宽度尺寸介于1微米到100微米之间。Further, the maximum width of the light-emitting element is between 1 micron and 100 microns.
本发明还提供一种显示装置，包括：一基板；一第一电极连接层，设置于该基板上；多个发光元件，设置于该第一电极连接层上，每一该发光元件包括：一第一电极，设置于该第一电极连接层上；一第二电极；以及一磊晶结构，设置于该第一电极与该第二电极之间，该磊晶结构包括：一发光层；一第一型半导体层，设置于该发光层与该第一电极间；以及一第二型半导体层，设置于该发光层与该第二电极间，且该第二型半导体层具有一第一表面与一相对于该第一表面的第二表面，该第一表面接触该发光层，该第二表面具有至少一凹陷；其中该第二电极至少部分设置于该至少一凹陷中；以及一第二电极连接层，设置于每一该发光元件的该第二电极上。The present invention also provides a display device, comprising: a substrate; a first electrode connection layer disposed on the substrate; a plurality of light emitting elements disposed on the first electrode connection layer, each of the light emitting elements comprising: a A first electrode disposed on the first electrode connection layer; a second electrode; and an epitaxial structure disposed between the first electrode and the second electrode, the epitaxial structure comprising: a light emitting layer; a A first-type semiconductor layer disposed between the light-emitting layer and the first electrode; and a second-type semiconductor layer disposed between the light-emitting layer and the second electrode, and the second-type semiconductor layer has a first surface and a second surface opposite to the first surface, the first surface contacts the light-emitting layer, the second surface has at least one depression; wherein the second electrode is at least partially disposed in the at least one depression; and a second The electrode connecting layer is disposed on the second electrode of each light emitting element.
进一步地，每一该发光元件中的该至少一凹陷的深度与该第二型半导体层的厚度的比值大于0且小于等于0.4。Further, the ratio of the depth of the at least one recess in each of the light-emitting elements to the thickness of the second-type semiconductor layer is greater than 0 and less than or equal to 0.4.
进一步地，每一该发光元件中的该至少一凹陷的开口面积与该第二表面的一俯视面面积的比值大于等于0.01且小于等于0.5。Further, the ratio of the opening area of the at least one recess in each of the light-emitting elements to a plan view area of the second surface is greater than or equal to 0.01 and less than or equal to 0.5.
进一步地，每一该发光元件中的该第二表面的该至少一凹陷为多个凹陷，且多个所述凹陷有间隔地设置于该第二表面。Further, the at least one depression on the second surface of each light-emitting element is a plurality of depressions, and the plurality of depressions are arranged on the second surface at intervals.
进一步地，每一该发光元件中的该第二电极全部设置于该至少一凹陷中。Further, all of the second electrodes in each light emitting element are disposed in the at least one recess.
进一步地，该第二电极的一表面切齐于该至少一凹陷的开口。Further, a surface of the second electrode is aligned with the at least one recessed opening.
进一步地，该第二电极的一表面低于该至少一凹陷的开口。Further, a surface of the second electrode is lower than the at least one recessed opening.
进一步地，每一该发光元件中的该磊晶结构的厚度不大于6微米。Further, the thickness of the epitaxial structure in each of the light emitting elements is not greater than 6 microns.
进一步地，每一该发光元件的最大宽度尺寸介于1微米到100微米之间。Further, the maximum width of each light-emitting element is between 1 micron and 100 microns.
进一步地，该第二电极连接层更设置于每一该发光元件的该第二型半导体层的该凹陷中，并连接每一该发光元件的该第二电极。Further, the second electrode connection layer is further disposed in the recess of the second-type semiconductor layer of each light-emitting element, and connected to the second electrode of each light-emitting element.
进一步地，多个所述发光元件组成多个像素结构，每一该像素结构包括至少一该发光元件，且多个所述像素结构组成40像素密度至400像素密度。Further, a plurality of the light-emitting elements form a plurality of pixel structures, each pixel structure includes at least one light-emitting element, and the plurality of pixel structures form a pixel density of 40 to 400 pixels.
综上所述，本发明公开了一种发光元件与一种具有此发光元件的显示装置，发光元件的磊晶结构中，于其中一个半导体层中挖设凹陷，并于凹陷中填入电极，从而使电极与半导体层之间的接触面积提升，从而提高电流分布及/或发光效率。In summary, the present invention discloses a light-emitting element and a display device having the light-emitting element. In the epitaxial structure of the light-emitting element, a recess is dug in one of the semiconductor layers, and electrodes are filled in the recess. Therefore, the contact area between the electrode and the semiconductor layer is increased, thereby improving current distribution and/or luminous efficiency.
以上之关于本发明内容的说明及以下实施方式的说明用以示范与解释本发明的精神与原理，并且为本发明的保护范围提供更进一步的解释。The above descriptions about the content of the present invention and the following descriptions of the embodiments are used to demonstrate and explain the spirit and principle of the present invention, and provide further explanations for the protection scope of the present invention.
附图说明Description of drawings
图1A为本发明一实施例的发光元件俯视图；FIG. 1A is a top view of a light emitting element according to an embodiment of the present invention;
图1B为本发明一实施例的发光元件剖面示意图；1B is a schematic cross-sectional view of a light-emitting element according to an embodiment of the present invention;
图1C为本发明另一实施例的发光元件剖面示意图；Fig. 1C is a schematic cross-sectional view of a light-emitting element according to another embodiment of the present invention;
图1D为本发明再一实施例的发光元件剖面示意图；FIG. 1D is a schematic cross-sectional view of a light-emitting element according to yet another embodiment of the present invention;
图1E为本发明又一实施例的发光元件剖面示意图；1E is a schematic cross-sectional view of a light-emitting element according to another embodiment of the present invention;
图2为本发明另一实施例的发光元件俯视图；Fig. 2 is a top view of a light emitting element according to another embodiment of the present invention;
图3为对应于图2的发光元件剖面示意图；Fig. 3 is a schematic cross-sectional view of a light-emitting element corresponding to Fig. 2;
图4为本发明一实施例的发光元件剖面示意图；4 is a schematic cross-sectional view of a light emitting element according to an embodiment of the present invention;
图5为本发明另一实施例的发光元件剖面示意图；5 is a schematic cross-sectional view of a light emitting element according to another embodiment of the present invention;
图6为本发明一实施例的显示装置俯视图；6 is a top view of a display device according to an embodiment of the present invention;
图7为图6中的像素结构PX部分的剖面示意图。FIG. 7 is a schematic cross-sectional view of the pixel structure PX in FIG. 6 .
【附图标记说明】[Description of Reference Signs]
1000、1000’、1000”、3000、4000、5000 发光元件1000, 1000’, 1000”, 3000, 4000, 5000 light emitting elements
1100、3100、4100、5100 第一电极1100, 3100, 4100, 5100 First electrode
1200、3200、4200、5200 第二电极1200, 3200, 4200, 5200 Second electrode
1300、1300’、1300”、3300 磊晶结构1300, 1300’, 1300”, 3300 epitaxial structure
1310、3310 第一型半导体层1310, 3310 first type semiconductor layer
1320、3320 发光层1320, 3320 luminous layer
1330、3330 第二型半导体层1330, 3330 Second-type semiconductor layer
1331、3331 第一表面1331, 3331 first surface
1333、3333 第二表面1333, 3333 second surface
2000 显示装置2000 display device
2100 基板2100 Substrate
2110 显示区2110 display area
2120 非显示区2120 non-display area
2121 数据驱动电路2121 data drive circuit
2122 扫描驱动电路2122 scan drive circuit
2200 第一电极连接层2200 first electrode connection layer
2210 第一电极连接结构2210 First electrode connection structure
2300 第二电极连接层2300 Second electrode connection layer
6000 控制电路6000 control circuit
AA’、BB’、CC’ 剖面线AA’, BB’, CC’ hatching
PX 像素结构PX pixel structure
R 凹陷R concave
T 厚度T Thickness
Tr 工作电路Tr working circuit
具体实施方式Detailed ways
以下在实施方式中详细叙述本发明的详细特征以及优点，其内容足以使本领域技术人员了解本发明的技术内容并加以实施，且根据本说明书所公开的内容、保护范围及说明书附图，本领域技术人员可轻易地理解本发明相关的目的及优点。以下的实施例为进一步详细说明本发明的观点，并非以任何观点限制本发明的保护范围。The detailed features and advantages of the present invention are described in detail below in the embodiments, which are sufficient to enable those skilled in the art to understand the technical content of the present invention and implement it, and according to the disclosed content, scope of protection and accompanying drawings of this specification, this The related objects and advantages of the present invention can be easily understood by those skilled in the art. The following examples are to further describe the present invention in detail, not to limit the protection scope of the present invention in any way.
请参照图1A与图1B，其中图1A为本发明一实施例的发光元件俯视图，图1B为本发明一实施例的发光元件剖面示意图(AA’)。如图所示，依据本发明一实施例的发光元件1000，具有第一电极1100、第二电极1200与磊晶结构1300。Please refer to FIG. 1A and FIG. 1B , wherein FIG. 1A is a top view of a light emitting device according to an embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view (AA') of a light emitting device according to an embodiment of the present invention. As shown in the figure, a light emitting device 1000 according to an embodiment of the present invention has a first electrode 1100 , a second electrode 1200 and an epitaxial structure 1300 .
磊晶结构1300设置于第一电极1100与第二电极1200之间。磊晶结构1300具有发光层1320、设置于发光层1320与第一电极1100间的第一型半导体层1310以及设置于发光层1320与第二电极1200间的第二型半导体层1330。第二型半导体层1330的第一表面1331接触发光层1320，第二型半导体层1330的第二表面1333相对于第一表面1331，且第二表面1333具有至少一个凹陷R，此处以一个凹陷R为例。凹陷R通过蚀刻形成于第二型半导体层1330中，且位于第二表面1333的中心区域。至少部分第二电极1200设置于凹陷R中。磊晶结构1300可包括Ⅱ-Ⅵ族材料(例如：锌化硒(ZnSe))或Ⅲ-Ⅴ氮族化物材料(例如：氮化镓(GaN)、氮化铝(AlN)、氮化铟(InN)、氮化铟镓(InGaN)、氮化铝镓(AlGaN)或氮化铝铟镓(AlInGaN))。The epitaxial structure 1300 is disposed between the first electrode 1100 and the second electrode 1200 . The epitaxial structure 1300 has a light emitting layer 1320 , a first type semiconductor layer 1310 disposed between the light emitting layer 1320 and the first electrode 1100 , and a second type semiconductor layer 1330 disposed between the light emitting layer 1320 and the second electrode 1200 . The first surface 1331 of the second-type semiconductor layer 1330 contacts the light-emitting layer 1320, the second surface 1333 of the second-type semiconductor layer 1330 is opposite to the first surface 1331, and the second surface 1333 has at least one depression R, here a depression R as an example. The recess R is formed in the second-type semiconductor layer 1330 by etching, and is located in the central region of the second surface 1333 . At least part of the second electrode 1200 is disposed in the recess R. As shown in FIG. The epitaxial structure 1300 may include II-VI group materials (such as zinc selenide (ZnSe)) or III-V nitride materials (such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride ( InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN)).
磊晶结构1300的厚度T以不超过6微米为佳，且磊晶结构1300的厚度T通常大于1微米，太厚或太薄都将影响后续制程的良率。本实施例的第二型半导体层1330的厚度可大于第一型半导体层1310的厚度，其中第二型半导体层1330的厚度介于1微米至5微米之间，主动层1320的厚度介于0.1微米至1微米之间，而第一型半导体层1330的厚度介于0.1微米至0.5微米之间，但并不以为限。其中第一型半导体层1310与第二型半导体层1330的掺杂类型不同。举例来说，第一型半导体层1310例如为P型掺杂的半导体层，而第二型半导体1330层例如为N型掺杂的半导体层。发光层1320例如为一多量子阱(multiple quantum well，MQW)结构，但并不以为限。而凹陷R的深度与第二型半导体层1330的厚度的比值大于0且小于等于0.4，大于0.4可能会使磊晶结构1300产生缺陷。The thickness T of the epitaxial structure 1300 is preferably no more than 6 microns, and the thickness T of the epitaxial structure 1300 is usually greater than 1 micron. Too thick or too thin will affect the yield of subsequent processes. The thickness of the second-type semiconductor layer 1330 in this embodiment can be greater than the thickness of the first-type semiconductor layer 1310, wherein the thickness of the second-type semiconductor layer 1330 is between 1 micron and 5 microns, and the thickness of the active layer 1320 is between 0.1 micron to 1 micron, and the thickness of the first-type semiconductor layer 1330 is between 0.1 micron to 0.5 micron, but not limited thereto. The doping types of the first-type semiconductor layer 1310 and the second-type semiconductor layer 1330 are different. For example, the first-type semiconductor layer 1310 is, for example, a P-type doped semiconductor layer, and the second-type semiconductor layer 1330 is, for example, an N-type doped semiconductor layer. The light emitting layer 1320 is, for example, a multiple quantum well (MQW) structure, but not limited thereto. The ratio of the depth of the recess R to the thickness of the second-type semiconductor layer 1330 is greater than 0 and less than or equal to 0.4, and greater than 0.4 may cause defects in the epitaxial structure 1300 .
于一实施例中，如图1B所示，第二电极1200全部都在凹陷R中。此处，第二电极1200填满凹陷R。于此实施例中，第二电极1200是一个柱状结构，且第二电极1200的一表面切齐凹陷R的开口，也就是切齐于第二表面1333，换句话说，第二电极1200的表面与第二表面1333共平面。于另一实施例，请参照图1C，其为本发明另一实施例的发光元件剖面示意图。如图1C所示，第二电极1200超出凹陷R的开口，也就是第二表面1333与第二电极1200的表面不共平面。换句话说，第二电极1200部分设置于凹陷中而第二电极1200部分位于凹陷以外，可增加电极接触面积。于再一实施例中，请参照图1D，其为本发明再一实施例的发光元件剖面示意图。如图1D所示，第二电极1200都位于凹陷R内但并未填满凹陷R，而仅是铺设于凹陷R的底部与侧壁。换句话说，于此实施例中的第二电极1200的形状为马蹄形(U-shape)。于又一实施例中，请参照图1E，其为本发明又一实施例的发光元件剖面示意图。如图1E所示，第二电极1200都位于凹陷R内但并没有铺满凹陷R的底部与侧壁，而仅是铺设于凹陷R的部分的侧壁与底部。换句话说，且第二电极1200的一表面略低于凹陷R的开口。In one embodiment, as shown in FIG. 1B , all of the second electrodes 1200 are in the recess R. Referring to FIG. Here, the second electrode 1200 fills up the recess R. Referring to FIG. In this embodiment, the second electrode 1200 is a columnar structure, and one surface of the second electrode 1200 is aligned with the opening of the recess R, that is, aligned with the second surface 1333, in other words, the surface of the second electrode 1200 Coplanar with the second surface 1333 . In another embodiment, please refer to FIG. 1C , which is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention. As shown in FIG. 1C , the second electrode 1200 is beyond the opening of the recess R, that is, the second surface 1333 is not coplanar with the surface of the second electrode 1200 . In other words, part of the second electrode 1200 is disposed in the recess and part of the second electrode 1200 is located outside the recess, which can increase the electrode contact area. In yet another embodiment, please refer to FIG. 1D , which is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention. As shown in FIG. 1D , the second electrodes 1200 are located in the recess R but do not fill the recess R, but are only laid on the bottom and sidewalls of the recess R. In other words, the shape of the second electrode 1200 in this embodiment is a U-shape. In yet another embodiment, please refer to FIG. 1E , which is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention. As shown in FIG. 1E , the second electrodes 1200 are located in the recess R but do not cover the bottom and side walls of the recess R, but are only laid on the side walls and bottom of the recess R. In other words, one surface of the second electrode 1200 is slightly lower than the opening of the recess R. Referring to FIG.
请回到图1A，以第二电极1200填满凹陷R为例，凹陷R的开口面积与第二型半导体层1330的第二表面1333的一俯视面面积的比值介于0.01至0.5之间，大于0.5可能会造成遮光，小于0.01会使电流分布较不均匀，较佳是介于0.02至0.2之间，可兼具电流分布效率以及减少遮光。举例来说，于第一个实施例中，第二型半导体层1330的俯视面为15微米长宽的正方形，而凹陷R的开口为直径3微米的圆形，将可以有较佳的电流分布效率及出光率。虽然前述实施例以第二型半导体层1330的俯视面为正方形且凹陷R的开口为圆形为例，然而实际上本发明并不限定第二型半导体层1330的俯视面的形状，也不限定凹陷R的开口形状与剖面形状。举例来说，第二型半导体层1330的俯视面也可以是矩形、圆形或其他适当的形状。而凹陷R的开口也可以是正方形、矩形、椭圆形或其他适当的形状。而凹陷R的剖面也可以是正方形、矩形、椭圆形、柱状或其他适当的形状。Please return to FIG. 1A , taking the second electrode 1200 filling the recess R as an example, the ratio of the opening area of the recess R to the area of a plan view of the second surface 1333 of the second-type semiconductor layer 1330 is between 0.01 and 0.5, If it is greater than 0.5, it may cause shading, and if it is less than 0.01, the current distribution will be uneven. It is preferably between 0.02 and 0.2, which can achieve both current distribution efficiency and reduced shading. For example, in the first embodiment, the top view surface of the second-type semiconductor layer 1330 is a square with a length and width of 15 microns, and the opening of the recess R is a circle with a diameter of 3 microns, which can have better current distribution. Efficiency and light yield. Although the foregoing embodiments take the top view surface of the second-type semiconductor layer 1330 as a square and the opening of the recess R as an example, the present invention does not limit the shape of the top view surface of the second-type semiconductor layer 1330, nor does it limit The opening shape and cross-sectional shape of the recess R. For example, the plan view of the second-type semiconductor layer 1330 may also be rectangular, circular or other suitable shapes. The opening of the recess R can also be square, rectangular, elliptical or other suitable shapes. The cross section of the depression R can also be square, rectangular, elliptical, columnar or other appropriate shapes.
借助如图1B至图1E的设置，虽然在前述第一个实施例中，从第二型半导体层1330的俯视面来看，第二电极1200的面积(也就是凹陷R的开口面积)仅为2.25π平方微米。然而，实际上第二电极1200与第二型半导体层1330接触的面积，也就是底部与侧壁的面积总合，远大于凹陷R的开口面积，从而使第二电极1200与第二型半导体层1330之间的接触面积提升，从而提高电流分布及/或发光效率。特别说明的是，发光元件1000的最大宽度尺寸介于1微米到100微米之间，较佳是介于3微米到30微米之间，亦即本实施例中的发光元件1000为一微型发光元件(Micro LED)。由于微型发光元件的尺寸更为小，制作电极上要达到不遮光且较佳的电流分布效率有一定难度。通过第二电极1200设置于凹陷R中，让微型发光元件1000能兼具微小化并有效增加电流的分布效率。1B to 1E, although in the aforementioned first embodiment, viewed from the top view of the second-type semiconductor layer 1330, the area of the second electrode 1200 (that is, the opening area of the recess R) is only 2.25π square microns. However, in fact, the area where the second electrode 1200 is in contact with the second-type semiconductor layer 1330, that is, the sum of the area of the bottom and the sidewall, is much larger than the opening area of the recess R, so that the second electrode 1200 and the second-type semiconductor layer The contact area between 1330 is increased, thereby improving current distribution and/or luminous efficiency. In particular, the maximum width of the light-emitting element 1000 is between 1 micron and 100 microns, preferably between 3 microns and 30 microns, that is, the light-emitting element 1000 in this embodiment is a micro light-emitting element (Micro LEDs). Due to the smaller size of the micro-light-emitting elements, it is difficult to achieve better current distribution efficiency without shading the electrodes. By disposing the second electrode 1200 in the recess R, the miniature light-emitting device 1000 can be miniaturized and effectively increase the distribution efficiency of the current.
于另一实施例，请参照图2与图3，其中图2为本发明另一实施例的发光元件俯视图，而图3为对应于图2的发光元件剖面示意图。如图2与图3所示，发光元件1000的磊晶结构1300的第二型半导体层1330的第二表面1333不只有一个凹陷，更具有多个凹陷R，且每个凹陷R中设置有第二电极1200。且多个凹陷R(也就是第二电极1200)有间隔地分布于第二型半导体层1330的第二表面1333。于此实施例中，第二型半导体层1330的第二表面1333的俯视面是一个15微米长宽的正方形，每个凹陷R的开口是一个直径3微米的圆形，而一共有9个凹陷R分布于第二型半导体层1330的第二表面1333。换句话说，一共有9个第二电极1200分散地设置于第二型半导体层1330的第二表面1333，使电流分布更为均匀。此处，多个凹陷R等间隔地设置于第二表面1333，但于其他的实施例中，多个凹陷R也可不等间隔地设置于第二表面1333，例如是分散地设置于第二表面1333的两侧，可减少正向的遮光。特别说明的是，图2凹陷开口的总面积与第二表面1333的俯视面面积的比值在0.01至0.5之间，大于0.5可能会造成遮光，小于0.01会使电流分布较不均匀，较佳是介于0.01至0.2之间，可兼具电流分布效率以及减少遮光。In another embodiment, please refer to FIG. 2 and FIG. 3 , wherein FIG. 2 is a top view of a light emitting device according to another embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view of the light emitting device corresponding to FIG. 2 . As shown in FIG. 2 and FIG. 3 , the second surface 1333 of the second-type semiconductor layer 1330 of the epitaxial structure 1300 of the light emitting element 1000 not only has one depression, but also has a plurality of depressions R, and each depression R is provided with a first Two electrodes 1200. And a plurality of recesses R (that is, the second electrodes 1200 ) are distributed on the second surface 1333 of the second-type semiconductor layer 1330 at intervals. In this embodiment, the top view of the second surface 1333 of the second-type semiconductor layer 1330 is a square with a length and width of 15 microns, and the opening of each recess R is a circle with a diameter of 3 microns, and there are 9 recesses in total. R is distributed on the second surface 1333 of the second-type semiconductor layer 1330 . In other words, a total of nine second electrodes 1200 are dispersedly disposed on the second surface 1333 of the second-type semiconductor layer 1330 to make the current distribution more uniform. Here, the plurality of recesses R are arranged at equal intervals on the second surface 1333, but in other embodiments, the plurality of recesses R may also be arranged at unequal intervals on the second surface 1333, such as being dispersedly arranged on the second surface Both sides of 1333 can reduce the positive shading. In particular, the ratio of the total area of the recessed openings in FIG. 2 to the area of the top surface of the second surface 1333 is between 0.01 and 0.5. If it is greater than 0.5, it may cause shading, and if it is less than 0.01, the current distribution will be uneven. Between 0.01 and 0.2, it can combine current distribution efficiency and reduce shading.
第一电极1100与第二电极1200分别接触且电性连接第一型半导体层1310与第二型半导体层1330。此处，第一电极1100例如为一P型电极且第二电极1200例如为一N型电极。于一实施例中，第一电极1100、第二电极1200由高功函数金属(例如：铂、镍、钛、金、铬、上述之合金及上述材料之组合)、金属氧化物(如氧化铟锡及氧化锌)或是导电的非金属材料如导电高分子、石墨、石墨烯及黑磷形成。以金属材料为例，所谓的高功函数金属例如为功函数不小于4.5电子伏特的金属材料。The first electrode 1100 and the second electrode 1200 respectively contact and electrically connect the first-type semiconductor layer 1310 and the second-type semiconductor layer 1330 . Here, the first electrode 1100 is, for example, a P-type electrode and the second electrode 1200 is, for example, an N-type electrode. In one embodiment, the first electrode 1100 and the second electrode 1200 are made of high work function metals (for example: platinum, nickel, titanium, gold, chromium, the above alloys and combinations of the above materials), metal oxides (such as indium oxide tin and zinc oxide) or conductive non-metallic materials such as conductive polymers, graphite, graphene and black phosphorus. Taking a metal material as an example, the so-called high work function metal is, for example, a metal material with a work function not less than 4.5 eV.
于一实施例中，请参照图4，其为本发明一实施例的发光元件剖面示意图。如图4所示，发光元件1000’的磊晶结构1300’并非如图1B的发光元件1000的磊晶结构。具体来说，于图4的磊晶结构1300’，其第一型半导体层1310的长宽大于第二型半导体层1330的长宽。也就是说，磊晶结构1300’为一个梯型结构(由侧面看去)。此处，第一型半导体层1310与第二型半导体层1330的最大宽度差值介于0微米至5微米之间，能弹性的应用于后续的设计中。In an embodiment, please refer to FIG. 4 , which is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention. As shown in FIG. 4 , the epitaxial structure 1300' of the light emitting device 1000' is not the epitaxial structure of the light emitting device 1000 shown in FIG. 1B . Specifically, in the epitaxial structure 1300' in FIG. 4 , the length and width of the first-type semiconductor layer 1310 are greater than the length and width of the second-type semiconductor layer 1330 . That is to say, the epitaxial structure 1300' is a ladder structure (viewed from the side). Here, the maximum width difference between the first-type semiconductor layer 1310 and the second-type semiconductor layer 1330 is between 0 μm and 5 μm, which can be flexibly applied in subsequent designs.
于另一实施例中，请参照图5，其为本发明另一实施例的发光元件剖面示意图。如图5所示，发光元件1000”的磊晶结构1300”并非如图1B的发光元件1000的磊晶结构或是图4的发光元件1000’的磊晶结构1300’。具体来说，于图5的磊晶结构1300”，其第一型半导体层1310的长宽小于第二型半导体层1330的长宽。也就是说，磊晶结构1300’为一个倒梯型结构(由侧面看去)。此处，第一型半导体层1310与第二型半导体层1330的最大宽度差值介于0微米至5微米之间，能弹性的应用于后续的设计中。In another embodiment, please refer to FIG. 5 , which is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention. As shown in FIG. 5 , the epitaxial structure 1300 ″ of the light emitting device 1000 ″ is not the epitaxial structure 1300 ′ of the light emitting device 1000 of FIG. 1B or the epitaxial structure 1300 ′ of the light emitting device 1000 ′ of FIG. 4 . Specifically, in the epitaxial structure 1300" in FIG. (Viewed from the side). Here, the maximum width difference between the first-type semiconductor layer 1310 and the second-type semiconductor layer 1330 is between 0 μm and 5 μm, which can be flexibly applied in subsequent designs.
本发明另一实施例公开了一种显示装置，请参照图6与图7，其中图6为本发明一实施例的显示装置的俯视示意图，图7为图6中的像素结构PX部分的剖面示意图。如图6与图7所示，显示装置2000具有基板2100、一设置于基板2100上的第一电极连接层2200、多个发光元件(此处示意以三个发光元件3000、4000与5000代表)与第二电极连接层2300。基板2100例如是互补式金属氧化物半导体(Complementary Metal-Oxide-Semiconductor，CMOS)基板、硅基液晶(Liquid Crystal on Silicon，LCOS)基板、薄膜晶体管(Thin FilmTransistor，TFT)基板或是其他具有工作电路的基板。此处，基板2100为一薄膜晶体管基板。Another embodiment of the present invention discloses a display device, please refer to FIG. 6 and FIG. 7 , wherein FIG. 6 is a schematic top view of a display device according to an embodiment of the present invention, and FIG. 7 is a section of the pixel structure PX in FIG. 6 schematic diagram. As shown in FIGS. 6 and 7 , the display device 2000 has a substrate 2100, a first electrode connection layer 2200 disposed on the substrate 2100, and a plurality of light emitting elements (represented by three light emitting elements 3000, 4000, and 5000 here). The layer 2300 is connected with the second electrode. The substrate 2100 is, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal on Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or other substrates with working circuits. the substrate. Here, the substrate 2100 is a thin film transistor substrate.
具体来说，基板2100具有显示区2110与非显示区2120。多个像素结构PX设置于基板2100的显示区2110上，每个像素结构PX由至少一个发光元件组成。此处是以每三个发光元件3000、4000、5000组成一个像素结构PX为例，举例来说，发光元件3000例如对应于蓝色子像素、发光元件4000例如对应于绿色子像素及而发光元件5000例如对应于红色子像素。特别说明的是，这些像素结构PX可组成40像素密度(Pixels Per Inch，PPI)至400像素密度，具有较佳分辨率。基板2100的非显示区2120中设置有数据驱动电路2121，其分别电性连接至各发光元件3000、4000与5000以将数据信号传输到各发光元件3000、4000与5000，以及扫描驱动电路2122，其分别电性连接至各发光元件3000、4000与5000以将扫描信号传输到各发光元件3000。数据驱动电路2121、扫描驱动电路2122、以及发光元件3000、4000与5000全部电性连接至一控制电路6000，例如一电路板，以驱动与控制发光元件3000、4000与5000的出光。Specifically, the substrate 2100 has a display area 2110 and a non-display area 2120 . A plurality of pixel structures PX are disposed on the display area 2110 of the substrate 2100, and each pixel structure PX is composed of at least one light emitting element. Here, a pixel structure PX is composed of three light emitting elements 3000, 4000, 5000 as an example. For example, the light emitting element 3000 corresponds to the blue sub-pixel, the light emitting element 4000 corresponds to the green sub pixel and 5000 corresponds to a red subpixel, for example. In particular, these pixel structures PX can form 40 pixel density (Pixels Per Inch, PPI) to 400 pixel density, with better resolution. The non-display area 2120 of the substrate 2100 is provided with a data driving circuit 2121, which is electrically connected to each of the light emitting elements 3000, 4000 and 5000 to transmit data signals to each of the light emitting elements 3000, 4000 and 5000, and a scanning driving circuit 2122, They are respectively electrically connected to the light emitting elements 3000 , 4000 and 5000 to transmit scanning signals to each light emitting element 3000 . The data driving circuit 2121, the scanning driving circuit 2122, and the light emitting elements 3000, 4000, and 5000 are all electrically connected to a control circuit 6000, such as a circuit board, to drive and control the light output of the light emitting elements 3000, 4000, and 5000.
其中以发光元件3000为例，发光元件3000具有第一电极3100、第二电极3200与磊晶结构3300。磊晶结构3300设置于第一电极3100与第二电极3200之间。磊晶结构3300具有发光层3320、设置于发光层3320与第一电极3100间的第一型半导体层3310与设置于发光层3320与第二电极3200间的第二型半导体层3330。第二型半导体层3330的第二表面3333相对于第一表面3331，且第二表面3333具有至少一个凹陷R。至少部分第二电极3200设置于第二型半导体层3330的至少一个凹陷R中。磊晶结构3300可包括Ⅱ-Ⅵ族材料(例如：锌化硒(ZnSe))或Ⅲ-Ⅴ氮族化物材料(例如：氮化镓(GaN)、氮化铝(AlN)、氮化铟(InN)、氮化铟镓(InGaN)、氮化铝镓(AlGaN)或氮化铝铟镓(AlInGaN))。其中在发光元件3000、4000与5000中间可填有绝缘层，以避免水气及氧气侵袭，提高发光元件的可靠度。或在发光元件3000、4000与5000中间填有反射层，可有效反射发光元件3000、4000与5000的侧向出光以增加出光。Taking the light emitting element 3000 as an example, the light emitting element 3000 has a first electrode 3100 , a second electrode 3200 and an epitaxial structure 3300 . The epitaxial structure 3300 is disposed between the first electrode 3100 and the second electrode 3200 . The epitaxial structure 3300 has a light emitting layer 3320 , a first type semiconductor layer 3310 disposed between the light emitting layer 3320 and the first electrode 3100 , and a second type semiconductor layer 3330 disposed between the light emitting layer 3320 and the second electrode 3200 . The second surface 3333 of the second-type semiconductor layer 3330 is opposite to the first surface 3331 , and the second surface 3333 has at least one recess R. At least part of the second electrode 3200 is disposed in at least one recess R of the second-type semiconductor layer 3330 . The epitaxial structure 3300 may include II-VI group materials (such as zinc selenide (ZnSe)) or III-V nitride materials (such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride ( InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) or aluminum indium gallium nitride (AlInGaN)). An insulating layer can be filled between the light-emitting elements 3000, 4000 and 5000 to avoid moisture and oxygen attack and improve the reliability of the light-emitting elements. Or a reflective layer is filled in the middle of the light-emitting elements 3000, 4000, and 5000, which can effectively reflect the lateral light emitted by the light-emitting elements 3000, 4000, and 5000 to increase the light output.
磊晶结构3300的厚度以不超过6微米为佳。特别说明的是发光元件3000、4000与5000的磊晶结构可具有不同厚度，例如发光元件3000例如对应于蓝色子像素可具有较厚的厚度，以增加发光元件个别的出光效率。应其中第一型半导体层3310与第二型半导体层3330的掺杂类型不同。举例来说，第一型半导体层3310例如为P型掺杂的半导体层，而第二型半导体3330层例如为N型掺杂的半导体层。发光层3320例如为一多量子阱(multiplequantum well，MQW)结构。而凹陷R的深度与第二型半导体层3330的厚度的比值大于0且小于等于0.4，大于0.4可能会使磊晶结构3300产生缺陷。此处以第二电极3200填满凹陷R为例，凹陷R的开口面积相对于第二型半导体层3330的第二表面3333的一俯视面面积的比值介于0.01至0.5之间，较佳是介于0.01至0.2之间，可兼具电流分布效率以及减少遮光。The thickness of the epitaxial structure 3300 is preferably no more than 6 microns. In particular, the epitaxial structures of the light emitting elements 3000 , 4000 and 5000 may have different thicknesses. For example, the light emitting element 3000 may have a thicker thickness corresponding to the blue sub-pixel to increase the individual light extraction efficiency of the light emitting elements. The doping types of the first-type semiconductor layer 3310 and the second-type semiconductor layer 3330 are different. For example, the first-type semiconductor layer 3310 is, for example, a P-type doped semiconductor layer, and the second-type semiconductor layer 3330 is, for example, an N-type doped semiconductor layer. The light emitting layer 3320 is, for example, a multiple quantum well (MQW) structure. The ratio of the depth of the recess R to the thickness of the second-type semiconductor layer 3330 is greater than 0 and less than or equal to 0.4, and greater than 0.4 may cause defects in the epitaxial structure 3300 . Here, taking the second electrode 3200 filling the recess R as an example, the ratio of the opening area of the recess R to the area of a plan view of the second surface 3333 of the second-type semiconductor layer 3330 is between 0.01 and 0.5, preferably between 0.01 and 0.5. Between 0.01 and 0.2, both current distribution efficiency and light shading can be reduced.
于一实施例，各发光元件的磊晶结构可以完全相同，也可以彼此相异。举例来说，各发光元件的磊晶结构可以如图7所示的都是柱状。类似地，各发光元件的磊晶结构可以都是梯形或者都是倒梯形。于另一实施例中，像素结构PX中的发光元件的磊晶结构的形状并非完全相同。举例来说，发光元件3000与发光元件5000的磊晶结构为倒梯形，而发光元件4000的磊晶结构为梯形。In one embodiment, the epitaxial structures of the light emitting elements may be completely the same or different from each other. For example, the epitaxial structure of each light emitting element may be columnar as shown in FIG. 7 . Similarly, the epitaxial structures of each light emitting element may be all trapezoidal or all inverted trapezoidal. In another embodiment, the shapes of the epitaxial structures of the light emitting elements in the pixel structure PX are not completely the same. For example, the epitaxial structures of the light emitting device 3000 and the light emitting device 5000 are inverted trapezoidal, while the epitaxial structure of the light emitting device 4000 is trapezoidal.
此处，第一电极连接层2200为多个独立的第一电极连接结构2210。发光元件3000、4000与5000分别通过第一电极3100、4100、5100设置且电性连接于对应的第一电极连接结构2210上。基板2100更包括多个工作电路Tr，第一电极连接结构2210设置且电性连接于对应的工作电路Tr上。工作电路Tr可包括例如开关晶体管、驱动晶体管、电容器及上述的组合。其中每一工作电路Tr各别电性至连接数据驱动电路2121、扫描驱动电路2123以及发光元件3000、4000与5000。于一实施例中，第一电极连接层2200可为一具可反射可见光波长的材料组成，此处第二电极连接层2300例如为选自于金、铜、锡、铟、上述材料的合金及上述材料的组成，但并不以为限。Here, the first electrode connection layer 2200 is a plurality of independent first electrode connection structures 2210 . The light emitting elements 3000 , 4000 and 5000 are respectively disposed and electrically connected to the corresponding first electrode connection structures 2210 through the first electrodes 3100 , 4100 , and 5100 . The substrate 2100 further includes a plurality of working circuits Tr, and the first electrode connection structure 2210 is disposed and electrically connected to the corresponding working circuits Tr. The working circuit Tr may include, for example, switching transistors, driving transistors, capacitors, and combinations thereof. Each working circuit Tr is electrically connected to the data driving circuit 2121 , the scanning driving circuit 2123 and the light emitting elements 3000 , 4000 and 5000 respectively. In one embodiment, the first electrode connection layer 2200 can be composed of a material that can reflect visible light wavelengths. Here, the second electrode connection layer 2300 is, for example, selected from gold, copper, tin, indium, alloys of the above materials, and Composition of the above materials, but not limited thereto.
第二电极连接层2300设置于发光元件3000、4000与5000的第二电极3200、4200、5200上且通过第二电极3200、4200、5200电性连接发光元件3000、4000与5000，即第二电极连接层2300为多个发光元件3000、4000与5000的共电极。此处，第二电极连接层2300连接至基板2100的非显示区2120的走线(图中未示出)与外部接点(图中未示出)以与控制电路6000电性链接。控制电路6000通过传送信号驱动及控制数据驱动电路2121、扫描驱动电路2123及工作电路Tr，以各别寻址驱动各发光元件3000、4000与5000的出光。于此实施例中，第二电极连接层2300的厚度介于2000埃(angstrom)与10000埃之间，小过2000埃会使共电极电流传导不佳，超过10000埃会使影响出光。于一实施例中，第二电极连接层2300为一半透明或透明材料组成，此处第二电极连接层2300例如为氧化铟锡。可有较佳的出光率，但并不以为限。特别说明的是，于一其他的实施例中，第二电极3200未填满凹陷R，而第二电极连接层2300进一步可设置于凹陷R，并连接第二电极3200。换句话说，第二电极连接层2300与第二电极3200的接触面积增加，可有更好的电流分布效率。The second electrode connection layer 2300 is disposed on the second electrodes 3200, 4200, 5200 of the light-emitting elements 3000, 4000, and 5000 and is electrically connected to the light-emitting elements 3000, 4000, and 5000 through the second electrodes 3200, 4200, and 5200, that is, the second electrodes. The connection layer 2300 is a common electrode of the plurality of light emitting elements 3000 , 4000 and 5000 . Here, the second electrode connection layer 2300 is connected to the traces (not shown in the figure) and external contacts (not shown in the figure) of the non-display area 2120 of the substrate 2100 to be electrically connected with the control circuit 6000 . The control circuit 6000 drives and controls the data driving circuit 2121 , the scan driving circuit 2123 and the working circuit Tr by transmitting signals, and drives the light output of each light emitting element 3000 , 4000 and 5000 with respective addressing. In this embodiment, the thickness of the second electrode connecting layer 2300 is between 2000 angstrom and 10000 angstrom. If the thickness is less than 2000 angstrom, the current conduction of the common electrode will be poor, and if it is more than 10000 angstrom, the light output will be affected. In one embodiment, the second electrode connection layer 2300 is made of translucent or transparent material, where the second electrode connection layer 2300 is, for example, indium tin oxide. There may be a better light extraction rate, but it is not limited thereto. In particular, in another embodiment, the second electrode 3200 does not fill the recess R, and the second electrode connection layer 2300 can be further disposed in the recess R and connected to the second electrode 3200 . In other words, the contact area between the second electrode connection layer 2300 and the second electrode 3200 is increased, which can have better current distribution efficiency.
综上所述，本发明公开了一种发光元件与一种具有此发光元件的显示装置，发光元件的磊晶结构中，于其中一个半导体层中挖设凹陷，并于凹陷中填入电极，从而使电极与半导体层之间的接触面积提升，从而提高电流分布及/或发光效率。In summary, the present invention discloses a light-emitting element and a display device having the light-emitting element. In the epitaxial structure of the light-emitting element, a recess is dug in one of the semiconductor layers, and electrodes are filled in the recess. Therefore, the contact area between the electrode and the semiconductor layer is increased, thereby improving current distribution and/or luminous efficiency.
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| CN201710068309.8ACN108400210A (en) | 2017-02-08 | 2017-02-08 | light emitting element and display device |
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