技术领域technical field
本发明涉及电子烟技术领域，特别涉及一种集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片及其制造方法。The invention relates to the technical field of electronic cigarettes, in particular to a MEMS electronic cigarette heating chip integrated with a Pt thin film resistance temperature sensor and a manufacturing method thereof.
背景技术Background technique
多数市售电子烟采用发热丝为发热元件，在供电状态下，发热丝通过电热转化产生的高热量加热烟液使之雾化。由于发热丝本身的螺旋形结构及导油件在其上的缠绕方式，使得发热丝在工作时难免出现局部高温的现象。烟液成分、导油材质在电子烟过高的温度下会发生理化性质的变化，可能产生有害裂解产物；高温下，烟液中的一些香气成分会被破坏，影响吸味的丰富性；电子烟温度过高也会使雾化产生的烟气温度过高，可能对呼吸道造成损伤；在烟液供应不足的情况下，过高的温度还会烧焦雾化芯(糊芯)，产生糊味，抽吸体验变差。Most commercially available e-cigarettes use a heating wire as a heating element. In the power supply state, the heating wire heats the e-liquid through the high heat generated by electrothermal conversion to atomize it. Due to the spiral structure of the heating wire itself and the way the oil guide is wound on it, it is inevitable that the heating wire will experience local high temperature during operation. E-cigarette components and oil-conducting materials will change in physical and chemical properties when the temperature of the e-cigarette is too high, and harmful cracking products may be produced; at high temperatures, some aroma components in the e-liquid will be destroyed, affecting the richness of the taste; the temperature of the e-cigarette is too high. The temperature of the smoke generated by atomization is too high, which may cause damage to the respiratory tract;
为了改善以上缺陷，近年来，在电子烟中出现了温控技术。该温控技术的基本原理是：电子烟温控芯片通过读取发热丝的电阻，来监控发热丝温度。发热丝本质上是电阻丝，当发热丝温度升高时，发热丝内部金属离子间的碰撞数随之增加，进而金属的电阻率会随温度变化，温度与阻值之间通过电阻温度系数相关联。具体而言，电子烟内置有发热丝阻值检测电路，允许用户根据自身喜好设置发热丝的最高温度。发热丝的基准电阻在室温下测定，以便确定与基准阻值相关的正确温度，然后，通过连续测定电子烟启动时的阻值并应用电阻-温度公式估算出电子烟的工作温度。通过温控芯片的特定算法，调节电池输出功率，使发热丝阻值不超过与用户设定温度相对应的计算值。目前常用的温控发热丝类型主要有镍200、钛和316不锈钢丝等。该技术的优势是发热丝不会过热、不会干烧、也同时避免了烟液过高蒸发温度下产生的异味和有害物质，大幅提升电子烟的整体体验和使用安全性。In order to improve the above defects, in recent years, temperature control technology has appeared in electronic cigarettes. The basic principle of this temperature control technology is: the electronic cigarette temperature control chip monitors the temperature of the heating wire by reading the resistance of the heating wire. The heating wire is essentially a resistance wire. When the temperature of the heating wire rises, the number of collisions between metal ions inside the heating wire increases accordingly, and the resistivity of the metal changes with temperature, and the temperature and resistance are related by the temperature coefficient of resistance. Specifically, the electronic cigarette has a built-in heating wire resistance detection circuit, which allows users to set the maximum temperature of the heating wire according to their own preferences. The reference resistance of the heating wire is measured at room temperature in order to determine the correct temperature related to the reference resistance value, and then, the operating temperature of the electronic cigarette is estimated by continuously measuring the resistance value when the electronic cigarette is started and applying the resistance-temperature formula. Through the specific algorithm of the temperature control chip, the output power of the battery is adjusted so that the resistance of the heating wire does not exceed the calculated value corresponding to the temperature set by the user. At present, the commonly used temperature control heating wire types mainly include nickel 200, titanium and 316 stainless steel wire. The advantage of this technology is that the heating wire will not be overheated or dry-burned, and it also avoids the odor and harmful substances produced by the high evaporation temperature of the e-liquid, which greatly improves the overall experience and safety of e-cigarettes.
目前，应用于电子烟的“温控”实际上是根据金属的电阻值变化换算出对应的温度从而实现所谓的“温控”，其最终还是依据发热丝的电阻变化来实现的。该温控方式不是通过温度传感器来检测温度，而是通过电子烟主机芯片计算发热丝的阻值变化来换算出温度信息，所以实际上目前电子烟的温控是以发热丝的阻值变化为依据的，并不是以实际温度来判断的，结果，温度的准确性直接与阻值的准确性相关，如果芯片检测到的初始阻值不准确，那根据电阻温度系数计算出来的温度就不会准确，如果基数错误，那整个计算结果也是错误的。另外，该温控方式依然存在以下问题：发热丝的电阻值只能反映整体的温度情况，当发生局部温度过高的时候，不能有效监测；其次在使用过程中，发热丝会因为高温老化、氧化等原因导致电阻的变化，会导致测温误差越来越大。At present, the "temperature control" applied to electronic cigarettes is actually based on the change of the resistance value of the metal to convert the corresponding temperature to realize the so-called "temperature control", which is finally realized based on the resistance change of the heating wire. This temperature control method does not use a temperature sensor to detect the temperature, but calculates the temperature information by calculating the resistance change of the heating wire through the main chip of the electronic cigarette. Therefore, in fact, the current temperature control of the electronic cigarette is based on the resistance change of the heating wire, not the actual temperature. As a result, the accuracy of the temperature is directly related to the accuracy of the resistance value. If the initial resistance value detected by the chip is inaccurate, the temperature calculated based on the temperature coefficient of resistance will not be accurate. In addition, this temperature control method still has the following problems: the resistance value of the heating wire can only reflect the overall temperature situation, and when the local temperature is too high, it cannot be effectively monitored; secondly, during use, the heating wire will cause changes in resistance due to high temperature aging, oxidation, etc., which will lead to increasing temperature measurement errors.
在众多测温方法中，电阻温度传感器(或电阻测温器，通常简称RTD)是最精确的方法之一，而薄膜电阻温度传感器相比传统RTD的优势是高灵敏度和快速热响应，这是因为其较小的尺寸减少了敏感元件和环境之间的热交换。金属铂(Pt)因对热的良好响应、电阻率与温度之间的高度线性正相关以及在高温下的长期化学稳定性，而成为薄膜电阻温度传感器的首选材料。目前，多数Pt薄膜电阻温度传感器可采用COMS(互补金属氧化物半导体)工艺或MEMS(微机电系统)工艺在硅或金属衬底上制备。特别是在MEMS器件中采用Pt，可允许制造在温度升高时能对塑性变形有高度耐受性的结构。Among the many temperature measurement methods, the resistance temperature sensor (or resistance temperature detector, usually referred to as RTD) is one of the most accurate methods, and the advantage of the thin film resistance temperature sensor over the traditional RTD is high sensitivity and fast thermal response, because its smaller size reduces the heat exchange between the sensitive element and the environment. Platinum (Pt) metal is the material of choice for thin-film resistive temperature sensors due to its good response to heat, highly linear positive correlation between resistivity and temperature, and long-term chemical stability at high temperatures. At present, most Pt thin-film resistance temperature sensors can be prepared on silicon or metal substrates by CMOS (complementary metal oxide semiconductor) technology or MEMS (micro-electromechanical system) technology. The use of Pt in MEMS devices in particular allows the fabrication of structures that are highly resistant to plastic deformation at elevated temperatures.
发明内容Contents of the invention
本发明的目的在于解决现有电子烟温控技术存在的问题，采用先进的MEMS加工技术，设计出集成温度传感器的MEMS电子烟发热芯片及其制造方法。通过集成Pt温度传感器，实时准确地测量MEMS发热芯片的温度，并配合外部温度控制器，实现MEMS发热芯片的准确控制，使烟液均匀雾化。The purpose of the present invention is to solve the problems existing in the existing electronic cigarette temperature control technology, and adopt advanced MEMS processing technology to design a MEMS electronic cigarette heating chip with an integrated temperature sensor and a manufacturing method thereof. Through the integrated Pt temperature sensor, the temperature of the MEMS heating chip can be accurately measured in real time, and with the external temperature controller, the accurate control of the MEMS heating chip can be realized, and the smoke liquid can be evenly atomized.
本发明第一方面公开了一种集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片，包括：The first aspect of the present invention discloses a MEMS electronic cigarette heating chip integrated with a Pt thin film resistance temperature sensor, including:
第一衬底1-1，呈片状，其正面有凹型的微腔体2；所述微腔体2内有贯穿所述第一衬底1-1的微通孔3；The first substrate 1-1 is in the form of a sheet, and has a concave microcavity 2 on the front; the microcavity 2 has a micro through hole 3 that runs through the first substrate 1-1;
第二衬底1-2，呈片状，其背面有垂直于其背面的微流道阵列4，正面中心区域设有垂直于其正面的多孔结构5，所述微流道阵列4与多孔结构5连通；其正面边缘有金属焊盘6；其正面表面中心位置有一个Pt薄膜电阻温度传感器7；The second substrate 1-2 is sheet-shaped, and its back has a microfluidic channel array 4 perpendicular to its back side, and the front center area is provided with a porous structure 5 perpendicular to its front, and the microfluidic channel array 4 communicates with the porous structure 5; its front edge has a metal pad 6; its front surface center has a Pt thin film resistance temperature sensor 7;
所述第一衬底1-1的正面与所述第二衬底1-2的背面粘合在一起。The front side of the first substrate 1-1 is bonded to the back side of the second substrate 1-2.
优选地，所述微腔体2的深度为1毫米至5毫米；所述微通孔3的直径为500微米至1毫米。Preferably, the depth of the microcavity 2 is 1 mm to 5 mm; the diameter of the micro through hole 3 is 500 microns to 1 mm.
优选地，所述第二衬底1-2的正面有金属薄膜，所述金属薄膜的厚度为200～500nm；所述金属薄膜的材料为Ti/Pt/Au、TiW/Au、Al、Cr或Pt/Au中的一种或几种。Preferably, there is a metal film on the front side of the second substrate 1-2, and the thickness of the metal film is 200-500 nm; the material of the metal film is one or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
优选地，所述微流道阵列4的微流道的直径为10微米至500微米，所述微流道的深度为所述第二衬底1-2高度的1/2～3/4。Preferably, the diameter of the micro-channels of the micro-channel array 4 is 10 microns to 500 microns, and the depth of the micro-channels is 1/2˜3/4 of the height of the second substrate 1-2.
优选地，所述多孔结构5的孔径为100纳米至1000纳米。Preferably, the pore diameter of the porous structure 5 is 100 nm to 1000 nm.
优选地，所述第一衬底为玻璃或高阻单晶硅制成，所述高阻单晶硅的电阻率大于10Ω·cm。Preferably, the first substrate is made of glass or high-resistance single-crystal silicon, and the resistivity of the high-resistance single-crystal silicon is greater than 10Ω·cm.
优选地，所述第二衬底为低阻单晶硅制成，所述低阻单晶硅的电阻率小于0.01Ω·cm。Preferably, the second substrate is made of low-resistance single-crystal silicon, and the resistivity of the low-resistance single-crystal silicon is less than 0.01Ω·cm.
本发明第二方面公开了一种集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片的制备方法，包括以下步骤：The second aspect of the present invention discloses a method for preparing a MEMS electronic cigarette heating chip integrated with a Pt thin film resistance temperature sensor, comprising the following steps:
第一衬底1-1的制备：Preparation of the first substrate 1-1:
(1)在玻璃片或电阻率大于10Ω·cm的高阻单晶硅片的正面光刻形成微腔体图形，然后采用腐蚀溶液腐蚀出微腔体2；(1) Photolithographically form a microcavity pattern on the front surface of a glass sheet or a high-resistance single crystal silicon wafer with a resistivity greater than 10Ω·cm, and then use an etching solution to etch the microcavity 2;
(2)对步骤(1)的玻璃片或高阻单晶硅片背面进行光刻，然后采用腐蚀溶液腐蚀出贯穿所述的玻璃片或高阻单晶硅片的微通孔3；即得到所述的第一衬底1-1；(2) performing photolithography on the back of the glass sheet or high-resistance single-crystal silicon wafer in step (1), and then using an etching solution to etch out the micro-vias 3 that run through the glass sheet or high-resistance single-crystal silicon wafer; that is, obtain the first substrate 1-1;
第二衬底1-2的制备：Preparation of the second substrate 1-2:
(a)在电阻率小于0.01Ω·cm的低电阻率的硅片的背面光刻形成微流道阵列图形；(a) photoetching the back of a silicon wafer with a low resistivity of less than 0.01Ω·cm to form a microchannel array pattern;
(b)采用深反应离子刻蚀工艺对步骤(a)的低电阻率硅片的背面进行刻蚀，形成微流道阵列4；(b) Etching the back side of the low-resistivity silicon wafer in step (a) by using a deep reactive ion etching process to form a microchannel array 4;
(c)采用低压化学气相沉积工艺对步骤(b)所述的低电阻率硅片的正面沉积一层氮化硅；(c) using a low-pressure chemical vapor deposition process to deposit a layer of silicon nitride on the front side of the low-resistivity silicon wafer described in step (b);
(d)对步骤(c)所述的低电阻率硅片的正面进行光刻，采用反应离子刻蚀工艺去除中部裸露的氮化硅层；(d) photolithography is carried out to the front side of the low-resistivity silicon wafer described in step (c), and the exposed silicon nitride layer in the middle is removed by a reactive ion etching process;
(e)采用电化学腐蚀工艺对步骤(d)所得到的低电阻率硅片的正面腐蚀出多孔结构5，使多孔结构与背面的微流道阵列连通；(e) using an electrochemical etching process to corrode the porous structure 5 on the front side of the low-resistivity silicon wafer obtained in step (d), so that the porous structure communicates with the microchannel array on the back;
(f)对步骤(e)所得到的低电阻率硅片，在硅片正面光刻，溅射Pt金属薄膜，通过剥离工艺制作Pt薄膜电阻温度传感器7；(f) For the low-resistivity silicon wafer obtained in step (e), photolithography is carried out on the front side of the silicon wafer, and the Pt metal thin film is sputtered, and a Pt thin film resistance temperature sensor 7 is made by a stripping process;
(g)采用反应离子刻蚀工艺去除步骤(e)所述的低电阻率硅片的正面剩余的氮化硅，然后溅射金属薄膜，采用剥离工艺制作金属焊盘6，即为所述第二衬底1-2；(g) Reactive ion etching process is used to remove the remaining silicon nitride on the front side of the low-resistivity silicon wafer described in step (e), and then the metal film is sputtered, and the metal pad 6 is produced by a lift-off process, which is the second substrate 1-2;
集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片的制备:Preparation of MEMS electronic cigarette heating chip integrated with Pt thin film resistance temperature sensor:
(甲)将所述第一衬底1-1的正面与所述第二衬底1-2的背面紧密接触，通过键合工艺粘合在一起；(A) The front side of the first substrate 1-1 is in close contact with the back side of the second substrate 1-2, and bonded together by a bonding process;
(乙)采用划片机将步骤(甲)得到的芯片进行划片，即得到所述的MEMS电子烟芯片。(B) Using a dicing machine to scribe the chip obtained in step (A) to obtain the MEMS electronic cigarette chip.
优选地，步骤(1)或(2)所述的腐蚀溶液，其中玻璃片的腐蚀溶液为氢氟酸溶液，高阻单晶硅片的腐蚀溶液为氢氧化钾溶液或四甲基氢氧化铵溶液之一。Preferably, the etching solution described in step (1) or (2), wherein the etching solution for the glass sheet is hydrofluoric acid solution, and the etching solution for the high-resistance single crystal silicon sheet is one of potassium hydroxide solution or tetramethylammonium hydroxide solution.
优选地，步骤(g)所溅射的金属薄膜材料为Ti/Pt/Au、TiW/Au、Al、Cr或Pt/Au中的一种或几种。Preferably, the material of the metal thin film sputtered in step (g) is one or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
本发明的有益结果：Beneficial results of the present invention:
(1)本发明采用集成铂电阻温度传感器对电子烟发热芯片的温度进行实时测量，温度测量准确，传感器寿命长、工作可靠，有效避免了现有电子烟发热体温度测量不准确、发热体老化导致测温电阻不断变化等问题；同时可以根据用户需求进行温度调节，从而改变雾化量。(1) The present invention uses an integrated platinum resistance temperature sensor to measure the temperature of the heating chip of the electronic cigarette in real time. The temperature measurement is accurate, the sensor has a long service life and reliable operation, and effectively avoids the problems of inaccurate temperature measurement of the heating element of the existing electronic cigarette and constant changes of the temperature measuring resistance caused by the aging of the heating element; at the same time, the temperature can be adjusted according to user needs, thereby changing the amount of atomization.
(2)本发明的集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片制作流程简单，工艺标准，适合进行批量生产。(2) The manufacturing process of the MEMS electronic cigarette heating chip integrated with the Pt thin film resistance temperature sensor of the present invention is simple, the process is standard, and it is suitable for mass production.
附图说明Description of drawings
图1为本发明的集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片的侧面剖视图；1 is a side sectional view of a MEMS electronic cigarette heating chip integrating a Pt thin film resistance temperature sensor of the present invention;
图2为本发明第一衬底侧面剖视图；Fig. 2 is a side sectional view of the first substrate of the present invention;
图3第二衬底侧面剖视图；Fig. 3 side sectional view of the second substrate;
图4第二衬底正面俯视图；Fig. 4 the front top view of the second substrate;
图5第二衬底背面俯视图。Fig. 5 is a top view of the back of the second substrate.
附图标记为：1-1、第一衬底；2、微腔体；3、微通孔；4、微流道阵列；5、多孔结构；6、金属焊盘；7、Pt薄膜电阻温度传感器；8、氮化硅层Reference numerals are: 1-1, first substrate; 2, microcavity; 3, micro through hole; 4, microchannel array; 5, porous structure; 6, metal pad; 7, Pt thin film resistance temperature sensor; 8, silicon nitride layer
具体实施方式Detailed ways
本发明的一种集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片，包括：A MEMS electronic cigarette heating chip integrating a Pt thin film resistance temperature sensor of the present invention comprises:
第一衬底1-1，呈圆片状，其正面有凹型的微腔体2；所述微腔体2内有贯穿所述第一衬底1-1的微通孔3；The first substrate 1-1 is disc-shaped, and has a concave microcavity 2 on its front; the microcavity 2 has a micro through hole 3 that runs through the first substrate 1-1;
第二衬底1-2，呈圆片状，其背面有垂直于其背面的微流道阵列4，正面中心区域设有垂直于其正面的多孔结构5，所述微流道阵列4与多孔结构5连通；其正面边缘有金属焊盘6；其正面表面中心有一个Pt薄膜电阻温度传感器7；The second substrate 1-2 is in the shape of a disc, and its back has a microfluidic channel array 4 perpendicular to its back side, and the front center area is provided with a porous structure 5 perpendicular to its front, and the microfluidic channel array 4 communicates with the porous structure 5; its front edge has a metal pad 6; its front surface center has a Pt thin film resistance temperature sensor 7;
所述第一衬底1-1的正面与所述第二衬底1-2的背面粘合在一起。The front side of the first substrate 1-1 is bonded to the back side of the second substrate 1-2.
所述微腔体2的深度选为3毫米；所述微通孔3的直径选为750微米。The depth of the microcavity 2 is selected as 3 mm; the diameter of the micro through hole 3 is selected as 750 microns.
所述第二衬底1-2的正面有金属薄膜，所述金属薄膜的厚度选为300nm；所述金属薄膜的材料选为Ti/Pt/Au。There is a metal film on the front side of the second substrate 1-2, the thickness of the metal film is selected as 300nm; the material of the metal film is selected as Ti/Pt/Au.
所述微流道阵列4的微流道的直径选为30微米，所述微流道的深度选为所述第二衬底1-2高度的1/2。The diameter of the micro-channels of the micro-channel array 4 is selected as 30 microns, and the depth of the micro-channels is selected as 1/2 of the height of the second substrate 1-2.
所述多孔结构5的孔径选为500纳米。The pore diameter of the porous structure 5 is selected as 500 nanometers.
所述第一衬底选为高阻单晶硅制成，所述高阻单晶硅的电阻率选为20Ω·cm。The first substrate is selected to be made of high-resistance single-crystal silicon, and the resistivity of the high-resistance single-crystal silicon is selected to be 20Ω·cm.
所述第二衬底为低阻单晶硅制成，所述低阻单晶硅的电阻率选为0.005Ω·cm。The second substrate is made of low-resistance single-crystal silicon, and the resistivity of the low-resistance single-crystal silicon is selected as 0.005Ω·cm.
本发明第二方面公开了一种集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片的制备方法，包括以下步骤：The second aspect of the present invention discloses a method for preparing a MEMS electronic cigarette heating chip integrated with a Pt thin film resistance temperature sensor, comprising the following steps:
第一衬底1-1的制备：Preparation of the first substrate 1-1:
(1)在电阻率选为20Ω·cm的高阻单晶硅圆片的正面光刻形成微腔体图形，然后采用腐蚀溶液氢氧化钾溶液腐蚀出微腔体2；(1) Forming microcavity patterns by photolithography on the front side of a high-resistance monocrystalline silicon wafer with a resistivity of 20 Ω cm, and then using an etching solution potassium hydroxide solution to etch out microcavities 2;
(2)对步骤(1)的高阻单晶硅圆片背面进行光刻，然后采用腐蚀溶液为氢氧化钾溶液腐蚀出贯穿所述高阻单晶硅片的微通孔3；即得到所述的第一衬底1-1；(2) performing photolithography on the back of the high-resistance single-crystal silicon wafer in step (1), and then using an etching solution as a potassium hydroxide solution to etch out the micro-through holes 3 that run through the high-resistance single-crystal silicon wafer; that is, obtain the first substrate 1-1;
第二衬底1-2的制备：Preparation of the second substrate 1-2:
(a)在电阻率选为0.005Ω·cm的低电阻率的硅圆片的背面光刻形成微流道阵列图形；(a) photoetching the back of the silicon wafer with a low resistivity of 0.005Ω·cm to form a microchannel array pattern;
(b)采用深反应离子刻蚀工艺对步骤(a)的低电阻率硅圆片的背面进行刻蚀，形成微流道阵列4；(b) Etching the back side of the low-resistivity silicon wafer in step (a) by using a deep reactive ion etching process to form a microchannel array 4;
(c)采用低压化学气相沉积工艺对步骤(b)所述的低电阻率硅圆片的正面沉积一层氮化硅；(c) using a low-pressure chemical vapor deposition process to deposit a layer of silicon nitride on the front side of the low-resistivity silicon wafer described in step (b);
(d)对步骤(c)所述的低电阻率硅圆片的正面进行光刻，采用反应离子刻蚀工艺去除中部裸露的氮化硅层；(d) photolithography is carried out to the front side of the low-resistivity silicon wafer described in step (c), and the exposed silicon nitride layer in the middle is removed by a reactive ion etching process;
(e)采用电化学腐蚀工艺对步骤(d)所得到的低电阻率硅圆片的正面腐蚀出多孔结构(5)，使多孔结构与背面的微流道阵列连通；(e) using an electrochemical etching process to corrode a porous structure (5) on the front side of the low-resistivity silicon wafer obtained in step (d), so that the porous structure communicates with the microchannel array on the back;
(f)对步骤(e)所得到的低电阻率硅圆片，在硅圆片正面光刻，溅射Pt金属薄膜，通过剥离工艺制作Pt薄膜电阻温度传感器7；(f) For the low-resistivity silicon wafer obtained in step (e), photolithography is carried out on the front side of the silicon wafer, and the Pt metal thin film is sputtered, and a Pt thin film resistance temperature sensor 7 is made by a stripping process;
(g)采用反应离子刻蚀工艺去除步骤(e)所述的低电阻率硅圆片的正面剩余的氮化硅，然后溅射金属薄膜材料为Ti/Pt/Au，采用剥离工艺制作金属焊盘6，即为所述第二衬底1-2；(g) Removing the remaining silicon nitride on the front side of the low-resistivity silicon wafer described in step (e) by reactive ion etching, then sputtering the metal thin film material to be Ti/Pt/Au, and using a lift-off process to make a metal pad 6, which is the second substrate 1-2;
集成Pt薄膜电阻温度传感器的MEMS电子烟发热芯片的制备:Preparation of MEMS electronic cigarette heating chip integrated with Pt thin film resistance temperature sensor:
(甲)将所述第一衬底(1-1)的正面与所述第二衬底1-2的背面紧密接触，通过键合工艺粘合在一起；(A) The front side of the first substrate (1-1) is in close contact with the back side of the second substrate 1-2, and bonded together by a bonding process;
(乙)采用划片机将步骤(甲)得到的芯片进行划片，即得到所述的均匀发热的MEMS电子烟芯片。(B) Using a dicing machine to scribe the chip obtained in step (A) to obtain the MEMS electronic cigarette chip with uniform heating.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004078.9ACN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip with integrated Pt temperature sensor and manufacturing method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004078.9ACN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip with integrated Pt temperature sensor and manufacturing method thereof |
| Publication Number | Publication Date |
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| CN108354228A CN108354228A (en) | 2018-08-03 |
| CN108354228Btrue CN108354228B (en) | 2023-07-25 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810004078.9AActiveCN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip with integrated Pt temperature sensor and manufacturing method thereof |
| Country | Link |
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| CN (1) | CN108354228B (en) |
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