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CN108336240A - Oled structure and flexible oled display panel - Google Patents

Oled structure and flexible oled display panel
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Publication number
CN108336240A
CN108336240ACN201710049974.2ACN201710049974ACN108336240ACN 108336240 ACN108336240 ACN 108336240ACN 201710049974 ACN201710049974 ACN 201710049974ACN 108336240 ACN108336240 ACN 108336240A
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CN
China
Prior art keywords
layer
silver
alloy
oled
equal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710049974.2A
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Chinese (zh)
Inventor
杨小龙
胡坤
单奇
林立
邢汝博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Govisionox Optoelectronics Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
Original Assignee
Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Kunshan New Flat Panel Display Technology Center Co Ltd, Kunshan Guoxian Photoelectric Co LtdfiledCriticalKunshan New Flat Panel Display Technology Center Co Ltd
Priority to CN201710049974.2ApriorityCriticalpatent/CN108336240A/en
Publication of CN108336240ApublicationCriticalpatent/CN108336240A/en
Pendinglegal-statusCriticalCurrent

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Abstract

The present invention provides a kind of OLED structure and flexible OLED display panels.The OLED structure includes anode layer, the organic function layer of cathode layer and setting between the anode layer and the cathode layer, the anode layer includes an ag alloy layer, the work function of the ag alloy layer is more than or equal to 4.9eV, it is seen that light reflectivity is more than or equal to 85%, and resistivity is less than or equal to 5 × 10‑6Ω·m.The present invention has higher work function, higher visible reflectance and preferable electric conductivity, and ag alloy layer has good ductility, can meet the requirement of flexible OLED display panel.

Description

OLED structure and flexible OLED display panel
Technical field
The invention belongs to display technology fields, and in particular to a kind of OLED structure and flexible OLED display panel.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) is active luminescent device.With biographyThe LCD (Liquid Crystal Display, liquid crystal display) of system is compared, and OLED display technologies are not necessarily to backlight, is had certainlyLuminous characteristic.OLED use relatively thin organic material film laye and glass substrate, when have electric current by when, organic material will be sent outLight.Therefore OLED display panel can save significantly on electric energy, can be made lighter and thinner, and wider model is resistant to than LCD display panelThe temperature change enclosed, and visible angle bigger.OLED display panel is expected to become the next-generation FPD skill after LCDArt is most one of technology that attracts attention in current flat panel display.
Allow OLED display panel that can have become the development trend of the screen of the following various intelligent uses with free bend.WithTraditional rigid OLED display panel is compared, and flexible OLED display panel has many advantages, such as, such as impact resistance, shock resistanceBy force, light-weight, it is small, it carries more convenient etc..It is flexible using materials such as plastics, polyester film or films as substrateOLED display panel can accomplish thinner, it might even be possible to be folded or rolled up, it can be achieved that flexible soft screen is shown and flexible light source.
In traditional rigid OLED display panel, top light emitting pattern widely uses this anode constructions of ITO/Ag.However, applicants have found that, for flexible OLED display panel, there are larger risks for this anode construction, are easyLead to the failure for shielding body.This is because the poor ductility of ITO materials, easy tos produce slight crack very under the beam mode of Flexible DisplaysTo complete fracture, thus lead to the failure of device.
Invention content
The purpose of the present invention is to provide a kind of OLED structure and flexible OLED display panels, to solve in the prior artThere are the problem of.
In order to solve the above technical problems, the present invention provides a kind of OLED structure, including anode layer, cathode layer and setting existOrganic function layer between anode layer and cathode layer, the anode layer include an ag alloy layer, the work function of the ag alloy layerMore than or equal to 4.9eV, it is seen that light reflectivity is more than or equal to 85%, and resistivity is less than or equal to 5 × 10-6Ω.m。
Optionally, the ag alloy layer is made of silver-nickel, silver-colored cobalt alloy, the one or more of silver-platinum alloy.
Optionally, the atomic ratio of silver and nickel is 6 in the silver-nickel:1~15:1.Further, the silver-colored nickel closesThe atomic ratio of Jin Zhongyin and nickel is 8:1~12:1.
Optionally, the atomic ratio of silver and cobalt is 6 in the silver-colored cobalt alloy:1~15:1.Further, the silver-colored cobalt closesThe atomic ratio of Jin Zhongyin and cobalt is 8:1~12:1.
Optionally, the atomic ratio of silver and platinum is 6 in the silver-platinum alloy:1~15:1.Further, the silver-colored platinum closesThe atomic ratio of Jin Zhongyin and platinum is 8:1~12:1.
Optionally, the thickness of the ag alloy layer is 150nm~300nm.
Another face according to the present invention provides a kind of flexible OLED display panel, using OLED structure as described above.
Optionally, the flexible OLED display panel uses top light emitting pattern.
As shown from the above technical solution, the advantages and positive effects of the present invention are:Selection is closed using a silver medal in the present inventionLayer gold, the work function of the ag alloy layer are more than or equal to 4.9eV, it is seen that and light reflectivity is more than or equal to 85%, and resistivity is less than 5 ×10-6Ω m, that is, there is higher work function, higher visible reflectance and preferable electric conductivity, also, silver alloyLayer has good ductility, can meet the requirement of flexible OLED display panel.
Description of the drawings
Fig. 1 is the schematic diagram of OLED structure in one embodiment of the invention;
Fig. 2 is the work content number curve of silver-nickel in one embodiment of the invention;
Fig. 3 is the visible reflectance curve of silver-nickel in one embodiment of the invention.
Specific implementation mode
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapesFormula is implemented, and is not understood as limited to embodiment set forth herein;On the contrary, thesing embodiments are provided so that the present invention willFully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical attached drawing in figureLabel indicates same or similar structure, thus will omit their detailed description.
Feature discussed below, structure or characteristic can be incorporated in one or more embodiment party in any suitable mannerIn formula.In the following description, many details are provided to fully understand embodiments of the present invention to provide.SoAnd it will be appreciated by persons skilled in the art that technical scheme of the present invention can be put into practice without one in the specific detailOr more, or other methods, component, material may be used etc..In other cases, it is not shown in detail or describes known knotStructure, material or operation are to avoid fuzzy each aspect of the present invention.
Inventor the study found that anode layer as OLED forward voltages articulamentum it is necessary to have preferable electric conductivity,Higher visible reflectance and higher work function, when it is applied to flexible display panels, it is also necessary to have preferableDuctility, to be not likely to produce slight crack when ensureing its bending.Based on above-mentioned consideration, the present embodiment also provides a kind of OLED structure, ginsengIt examines shown in Fig. 1, including anode layer (anode) 100, cathode layer (Cathode) 300 and setting are in anode layer 100 and cathode layerOrganic function layer 200 between 300.Wherein, the selection of anode layer 100 uses a silver alloy (Ag alloy) layer, the silver alloyThe work function of layer is more than or equal to 4.9eV, it is seen that light reflectivity is more than or equal to 85%, and resistivity is less than 5 × 10-6Ω m are (usually10-8Ω m), also, ag alloy layer has good ductility, and it is not easy to break.
In the present embodiment, the ag alloy layer uses silver-nickel (AgxNi1-x) be made, with preferable ductility,Easy fracture is not allowed under beam mode.Ag in the silver-nickel:The atomic ratio of Ni is 6:1~15:1.Why by silver-colored nickelAg in alloy:The atom of Ni is limited to less than equal to 15:1, mainly from work function the considerations of.Refering to what is shown in Fig. 2, working asAg:Ni atomic ratios are more than 15:When 1, corresponds to Ag contents and be more than 93.3%, under the work function of silver-nickel at this time has been understoodIt is down to 4.94eV, and is generally required as the work function of OLED anodes in 4.75eV or more, therefore for the purpose of management and control, at thisIn by Ag:Ni atomic ratios require to be less than or equal to 15:1, to realize that the alloy work function is maintained at 4.9eV or more.Why willAg in silver-nickel:The atom of Ni is limited to be more than or equal to 6:1, mainly from reflectivity the considerations of, refering to what is shown in Fig. 3,Work as Ag:Ni atomic ratios are less than or equal to 6:When 1, it is meant that the content of Ni increases, and corresponds to Ag contents at this time and is less than 85%, at this timeVisible reflectance has begun to decline, and the blu-ray reflection rate of especially 450nm is 84% or so, and OLED anodes reflectRate generally requires, 85% or more, therefore for silver-nickel, to be limited to be more than or equal to 6:1.Preferably, the silver-nickelMiddle Ag:The atomic ratio of Ni is 8:1~12:1, for example, Ag in the silver-nickel:The atomic ratio of Ni is 9:1、10:1、11:1, the study found that the work function of the anode layer, visible reflectance, electric conductivity and ductility are equal in this proportional regionMore preferably effect, especially Ag can be reached:The atomic ratio of Ni is 9:Work function and visible reflectance are especially desirable when 1.
In an alternative embodiment of the invention, the ag alloy layer also uses silver-colored cobalt alloy (AgxCo1-x) be made, have compared withGood ductility does not allow easy fracture under beam mode.Equally, the AgxCo1-xWork function be more than or equal to 4.9eV, it is seen thatLight reflectivity is more than or equal to 85%, and resistivity is less than 5 × 10-6Ω·m.For example, Ag in the silver cobalt alloy:The atomic ratio of CoIt is set as 6:1~15:1.Preferably, Ag in the silver-colored cobalt alloy:The atomic ratio of Co is 8:1~12:1, for example, 9:1、10:1、11:1, the work function of the anode layer, visible reflectance, electric conductivity and ductility can reach in this proportional regionTo more preferably effect.
In still another embodiment of the process, the ag alloy layer also uses silver-platinum alloy (AgxPt1-x) be made, have compared withGood ductility does not allow easy fracture under beam mode.Equally, the AgxPt1-xWork function be more than or equal to 4.9eV, it is seen thatLight reflectivity is more than or equal to 85%, and resistivity is less than 5 × 10-6Ω·m.For example, Ag in the silver-platinum alloy:The atomic ratio of PtIt is 6:1~15:1.Preferably, Ag in the silver-platinum alloy:The atomic ratio of Pt is 8:1~12:1, for example, 9:1、10:1、11:1, the work function of the anode layer, visible reflectance, electric conductivity and ductility can reach more in this proportional regionGood effect.
It should be noted that the ag alloy layer is not limited to silver-nickel, silver-colored cobalt alloy or silver-platinum alloy, can also beOther silver alloy for meeting work function, visible reflectance, electric conductivity and ductility and requiring.Also, the anode layer canCan also be the composite construction of several ag alloy layers to be the ag alloy layer of single layer, for example, ag alloy layer can use silver-colored nickelThe single layer structure of alloy, the silver-colored single layer structure of cobalt alloy or the single layer structure of silver-platinum alloy can also use silver-nickel, silver-colored cobaltArbitrary two or three of composite construction in alloy and silver-platinum alloy.In addition, the ag alloy layer can be silver and in additionA kind of alloy of metal (i.e. ag alloy layer be two kinds of metals alloy), can also be the alloy of silver-colored and other two or more metals(i.e. ag alloy layer be three kinds or more metals alloy), as long as ensureing work function, visible reflectance, electric conductivity and extensionProperty meets anode requirement.In addition, the anode layer can only include above-mentioned ag alloy layer, can thus obtain preferablyEffect, it should be appreciated that it can also include other materials layer, as long as including entire anode layer can reach work(after other materials layerFunction is more than or equal to 4.9eV, visible reflectance is more than or equal to 85%, resistivity and is less than or equal to 5 × 10-6The requirement of Ω m isIt can.
The organic function layer 200 along anode layer 100 towards cathode layer 300 successively include hole injection layer (HIL) 201,Luminescent layer (EML) 203 and electron injecting layer (EIL) 205.Wherein, hole injection layer 201 is adjacent with anode layer 100, electronics noteIt is adjacent with cathode layer 300 to enter layer 205.Further, it is also set up between hole injection layer (HIL) 201 and luminescent layer (EML) 203There is hole transmission layer (HTL), electron transfer layer is additionally provided between luminescent layer (EML) 203 and electron injecting layer (EIL) 205(ETL).When being applied with external voltage between anode layer 100 and cathode layer 300, under the driving of external voltage, by anode layer100 injected holes are entered by hole injection layer and hole transmission layer in luminescent layer, pass through electricity by cathode layer injected electronsSub- implanted layer and electron transfer layer enter in luminescent layer, and the hole and electronics entered in luminescent layer is compounded to form sharp in recombination regionSon, exciton radiation transistion shine and generate luminescence phenomenon, that is, form electroluminescent.
Wherein, the thickness of the anode layer 100 can be 150~300nm, e.g. 180nm, 210nm, 240nm,270nm.The thickness of the organic function layer 200 can be 150~450nm, e.g. 200nm, 250nm, 300nm, 350nm,400nm.The thickness of the cathode layer 300 can be 100~200nm, e.g. 120nm, 140nm, 160nm, 180nm.
The present embodiment also provides a kind of flexible OLED display panel, the main OLED for including substrate and being formed on substrateStructure.The flexibility OLED display panel uses top light emitting pattern.The substrate is, for example, flexible base board, preferably a polyamidesImines (PI) substrate.The shape of the flexible base board can be plane, curved surface or other irregular shapes.It should be understood that describedThe material and shape of substrate are not limited herein.The OLED structure is formed in base by modes such as deposition, vapor deposition or sputteringsOn plate.The defects of flexible OLED display panel of the present invention, anode construction can reduce or even avoid fracture, effectively improve displayPicture quality.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hairAny change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claimsRange.

Claims (8)

CN201710049974.2A2017-01-202017-01-20Oled structure and flexible oled display panelPendingCN108336240A (en)

Priority Applications (1)

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CN201710049974.2ACN108336240A (en)2017-01-202017-01-20Oled structure and flexible oled display panel

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN201710049974.2ACN108336240A (en)2017-01-202017-01-20Oled structure and flexible oled display panel

Publications (1)

Publication NumberPublication Date
CN108336240Atrue CN108336240A (en)2018-07-27

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Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN1481656A (en)*2001-08-312004-03-10���ṫ˾ Organic electroluminescence element and its manufacturing method
CN1575063A (en)*2003-05-282005-02-02索尼株式会社 Laminated structure, manufacturing method thereof, display element, and display unit
CN102626002A (en)*2009-08-072012-08-01三井金属矿业株式会社 Anode structure for organic EL element, production method thereof, and organic EL element
CN103403912A (en)*2011-03-082013-11-20E.I.内穆尔杜邦公司Organic electronic device for lighting
CN103594652A (en)*2012-08-172014-02-19海洋王照明科技股份有限公司Double-face luminescence organic electroluminescent device and preparation method thereof
CN104979037A (en)*2015-05-142015-10-14上海电力学院Transparent conducting thin film with enhanced thermal stability and preparation method and application thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN1481656A (en)*2001-08-312004-03-10���ṫ˾ Organic electroluminescence element and its manufacturing method
CN1575063A (en)*2003-05-282005-02-02索尼株式会社 Laminated structure, manufacturing method thereof, display element, and display unit
CN102626002A (en)*2009-08-072012-08-01三井金属矿业株式会社 Anode structure for organic EL element, production method thereof, and organic EL element
CN103403912A (en)*2011-03-082013-11-20E.I.内穆尔杜邦公司Organic electronic device for lighting
CN103594652A (en)*2012-08-172014-02-19海洋王照明科技股份有限公司Double-face luminescence organic electroluminescent device and preparation method thereof
CN104979037A (en)*2015-05-142015-10-14上海电力学院Transparent conducting thin film with enhanced thermal stability and preparation method and application thereof

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Application publication date:20180727

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