CN108279550B - A kind of double beam micro-nano optical manufacturing method - Google Patents
A kind of double beam micro-nano optical manufacturing methodDownload PDFInfo
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- CN108279550B CN108279550BCN201810014541.8ACN201810014541ACN108279550BCN 108279550 BCN108279550 BCN 108279550BCN 201810014541 ACN201810014541 ACN 201810014541ACN 108279550 BCN108279550 BCN 108279550B
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Abstract
Translated fromChinese
Description
Technical Field
The invention relates to the technical field of micro-nano optical manufacturing, in particular to a double-beam micro-nano optical manufacturing method.
Background
It is an ancient technology to transfer the designed pattern to the corresponding substrate by using photosensitive material. Optical manufacturing originated from film photographic technology 150 years ago, and was applied to the subsequent offset printing, the manufacture of PCB circuit board, and further to the fine processing of integrated circuit on silicon crystal material in nanometer size. In addition to being widely applied to the industries of integrated circuit manufacturing and flat panel display manufacturing, the optical manufacturing technology gradually extends to the related fields of micro-nano manufacturing, medicine research and development, micro electro mechanical systems, fluid manufacturing and the like in recent years.
The method of transferring a design pattern and a three-dimensional structure by using light irradiation to change the properties of a material and then retaining or removing the material with changed properties is widely applied to optical manufacturing. From ultraviolet lithography for integrated circuit fabrication to two-photon or multi-photon lithography for three-dimensional micro-nano structure fabrication; from the manufacture of large-size diffraction gratings to holographic recording and data storage, the patterns and structures to be manufactured are displayed by using materials of which the properties are changed by light, so that the precise copying of the patterns and structures is realized.
In the micro-nano scale fine manufacturing, the change contrast of the material light irradiation area and the material non-light irradiation area is realized by the local irradiation of light in the material. To produce fine patterns and structures, it is required that the area or volume irradiated when light is locally irradiated inside the material is as small as possible. For example, to create a line in a material, it is typically achieved by irradiating light in the form of a single point in the material and passing through a line. To make the diameter of this straight line small requires that the area and volume of light irradiated in a single point in the material be small. In order to achieve the production of fine patterns and structures on a micro-or nano-scale, the local irradiation of light inside a material is generally achieved in the form of focusing of light in the material.
Compared with accelerating electrons, ions and the like, light has the advantage of being convenient to penetrate through materials, the light energy can be concentrated through focusing, and the local irradiation area or volume of the light is reduced. In a small volume, the material has high concentration capability, provides excellent conditions for light to act on the material and realize the change of the material performance, and is widely applied. By focusing, light can be focused in a small area, generally the minimum dimension can be submicron, so that the manufacturing of micro-nano patterns and structures can be realized by utilizing light.
The range of focus of the light is dependent on the performance of the optical system in which the light is used. This is mainly determined by the wavelength of the light used and the focusing lens collection power, which is standardized by the numerical aperture of the focusing lens. In general, the feature size of the light focus is proportional to the wavelength of the light and inversely proportional to the numerical aperture of the focusing lens. The shorter the wavelength of light, the larger the numerical aperture, and the smaller the area in which light can be focused. According to the findings of Ernst Abbe (1840) -1905), German scientist, the minimum feature size of the optical system light focus is approximately equal to the wavelength of the light divided by twice the numerical aperture value. Since this phenomenon of light focusing originates from diffraction of light, the feature size is referred to as the diffraction limit.
Due to the existence of the diffraction limit, the fine degree of the micro-nano pattern and structure manufacturing by utilizing light is limited, and the method is mainly embodied in two aspects: the first is that the feature size of the patterns and structures to be fabricated is difficult to be smaller, such as with visible light, and the wire diameter of the wires is difficult to be under 100 nm. The second is that the feature density of the fabricated patterns and structures is difficult to be small, i.e., the distance between the centers of two physically separated lines in the fabricated patterns and structures is difficult to be small.
Generally, the numerical aperture of the oil immersion microscope objective can reach 1.4, even 1.65. However, the numerical aperture of the commercial microscope objective is difficult to be 1.8 or more because it is difficult to achieve a large reduction in the focal region, subject to the requirement of ensuring the light transmittance of the objective lens. The fabrication of commonly used high-precision, especially nanoscale, patterns and structures is typically accomplished using light of short wavelength. For example, in the manufacture of integrated circuits, 193 nm deep ultraviolet light is used, and a water immersion objective lens with a theoretical numerical aperture of 1.44 is used, so that patterns and structures with nanometer precision can be realized.
The use of shorter wavelength light to achieve higher precision patterning and structure fabrication results in increased cost of the optical system and may sacrifice the advantage of focusing the light within the material. By contrast, the cost of violet light sources is generally higher than the cost of visible light sources. Meanwhile, the ultraviolet energy is higher than the visible light, and the material absorbs the ultraviolet light with higher intensity than the common light. This makes it more difficult to manipulate ultraviolet light than visible light. Visible light can be reflected by a metallized mirror, and can be focused by glass or even resin lenses. However, these conventional methods of manipulating visible light cause significant loss of ultraviolet energy due to the significant absorption of ultraviolet light by typical materials. When 193 nm deep ultraviolet light propagates in air, air has serious absorption to the ultraviolet light, so that a vacuum working environment is required for a 193 nm deep ultraviolet lithography system.
Disclosure of Invention
The invention aims to provide a double-beam micro-nano optical manufacturing method aiming at the current situation.
The technical scheme adopted by the invention is as follows: a double-beam micro-nano optical manufacturing method comprises the following specific steps:
s1, providing manufacturing light according to the material characteristics of the material to be irradiated, wherein the material performance of the material to be irradiated changes under the irradiation of the manufacturing light;
s2, providing an auxiliary light according to the material characteristics of the material to be irradiated, wherein the auxiliary light can block the material property change of the material to be irradiated under the irradiation of the manufacturing light;
s3, regulating and controlling the relative positions of the local light field distribution of the manufacturing light and the auxiliary light in the material to be irradiated, so that the focus of the first local light field distribution formed by the manufacturing light on the material to be irradiated and the focus of the second local light field distribution formed by the auxiliary light on the material to be irradiated coincide in space, and forming a processing light field which is not coincided by the second local light field and acts on the material to be irradiated in the range of the first local light field.
The invention has the beneficial effects that: the invention achieves smaller feature size and higher resolution than without the assist light by modulating the assist light, enabling visible light fabrication to achieve feature sizes below 10 nanometers and resolution of 50 nanometers. By utilizing the advantage that visible light can be focused in the transparent material, three-dimensional electronic and photonic structures can be processed in the material. Meanwhile, the invention can realize stronger mechanical strength than that without auxiliary light when optical manufacturing is carried out under the action of auxiliary light and the same patterns and structures are manufactured.
Drawings
The drawings referred to in the description of the embodiments of the present invention are briefly introduced to facilitate a clearer and more complete description of the technical solutions in the embodiments of the present invention, and the following drawings are only directed to some embodiments of the present invention, and are not intended to limit the present invention, and it is obvious that other drawings may be derived from the drawings without performing other inventive works.
FIG. 1 is a schematic illustration of a first manner of property change of an irradiated material;
FIG. 2 is a schematic illustration of a second manner of property change of an irradiated material;
FIG. 3a is a schematic illustration of one aspect of a third manner of modifying the properties of an irradiated material;
FIG. 3b is a schematic illustration of another situation of a third way of changing the properties of the irradiated material;
FIG. 4 is a diagram of a device for applying the double-beam optical micro-nano manufacturing method to single-focus laser direct writing;
FIG. 5 is a light spot formed by the manufacturing light of FIG. 4;
FIG. 6 is a light spot formed by the assist light of FIG. 4;
FIG. 7 is an effective manufactured spot of FIG. 4 after the manufacturing light and the assist light have been coincident;
FIG. 8 is a 2 π vortex phase plate and a π phase plate;
FIG. 9 is a graph of the optical micro-nano fabrication density limit of FIG. 4;
FIG. 10 shows that the manufacturing light and the auxiliary light in FIG. 1 act together to increase the micro-nano manufacturing density;
FIG. 11 is a schematic diagram of the light produced in FIG. 4 with an array of spots achieved by phase modulation;
FIG. 12 is the array of spots in FIG. 4 where the assist light is synchronized with the fabrication light by phase modulation;
FIG. 13 is the effective manufactured optical spot array of FIG. 4 after the registration of the spot arrays formed by the manufacturing light and the assist light;
FIG. 14 is a fabrication of a micro-nano array structure with increased density;
FIG. 15 illustrates fabrication of an alternative micro-nano array structure with increased density;
FIG. 16 is a diagram of an apparatus for manufacturing holographic gratings by using the dual-beam optical micro-nano manufacturing method of the present invention;
FIG. 17 is an interference fringe formed by the fabrication light of FIG. 16;
fig. 18 is a superimposed fringe of two sets of interference fringes formed by the manufacturing light and the auxiliary light in fig. 16.
FIG. 19 is a schematic diagram of the fabrication of a light-formed holographic grating;
FIG. 20 is a schematic view of a holographic grating formed by the combined action of the fabrication light and the auxiliary light;
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
The invention provides a double-beam micro-nano optical manufacturing method. Firstly, a material to be irradiated is selected, and the material to be irradiated has the following properties: the auxiliary light is different from the specific response of the manufacturing light to the material, in particular, the material property of the processing material to be irradiated is changed under the irradiation of the manufacturing light, and the auxiliary light passes through the processing material to be irradiated, so that the change of the material property caused by the manufacturing light does not occur or does not sufficiently occur.
The material to be irradiated and processed used by the invention has performance change under the action of manufacturing light and auxiliary light in the following three ways.
The first is molecular reaction and the way to prevent molecular reaction. Under the action of the manufacturing light, a series of chemical reactions occur on the material aimed by the mode, and finally the target product is formed in the first local optical field distribution. These chemical reactions include: the original elements in the material have new chemical valence states, form new molecules, form new atom-molecule combinations and the like. The target product enables the material to have the required property change in the first local optical field distribution. When the auxiliary light irradiates the material to be irradiated, the auxiliary light in the form of molecular reaction or influencing molecular reaction makes the material to be irradiated produce light in the second local light field distribution to form the final target product with a lower yield under the action of the auxiliary light than without the action of the auxiliary light or with a lower conversion rate from the raw material to the final target product. The specific form may be one or several steps in a series of chemical processes that prevent the formation of the final target product under the action of the manufacturing light, and thus the final target product cannot be formed; or the occurrence rate of one or more steps in a series of chemical processes for forming the final target product under the action of the manufacturing light is slowed, the rate of forming the final target product is reduced, and thus the final product is reduced; or the material to be irradiated generates a certain substance in the second local optical field distribution under the action of the auxiliary light, and the substance can perform a physical and chemical reaction with a final target product formed under the action of the manufacturing light, so that the final product is reduced.
In the first way, for example, in the process of photopolymerization, the photoinitiator in the photo-excited material is formed into a photoinitiator radical, and the initiator finally makes the monomer undergo polymerization reaction through a series of chemical reactions, so that the conversion from the monomer to the polymer is completed. The molecules in the optical laser material are assisted, so that the molecules react to generate another molecule. This new molecule formed reacts with the photoinitiator radicals, thereby reducing the concentration of photoinitiator radicals in the region of the production light irradiation. The reduced concentration of photoinitiator radicals results in a slower rate of monomer to polymer conversion and thus a lower conversion of monomer to polymer in the area of the final production light irradiation (see figure 1).
The second mode is a mode of optical excitation and optical loss. Under irradiation of the manufacturing light, the material to be irradiated absorbs the manufacturing light. Atomic molecules of the material to be irradiated in the first local optical field distribution undergo a transition from an energy ground state to an energy excited state after absorption of the production light. The atomic molecules in the energy excited state induce a series of physicochemical reactions of the material, and finally form a target product in the first local optical field distribution. The target product enables the material to have the required property change in the first local optical field distribution. Atomic molecules in an energetically excited state after absorption of the production light may also pass through a series of physicochemical reactions during which they are generated, inducing the material to generate a number of atomic molecules in an energetically excited state that contribute to the formation of the final target product. When the auxiliary light irradiates the material to be irradiated, the auxiliary light causes the atomic molecules in the energetically excited state contributing to the formation of the final target product, which are formed by the production light, to transition to their other energy states in the form of optical losses in the second local optical field distribution. These atomic molecules in other energy states have a reduced contribution to the formation of the final target product, so that the yield of the final target product is lower under the influence of the auxiliary light than without the influence of the auxiliary light or the conversion of the raw material into the final target product is lower. The specific form can be that atomic molecules in an energy excited state contributing to the formation of a final target product are transited from an excited state to a ground state through stimulated radiation under the action of auxiliary light; it is also possible that atomic molecules in an excited state of energy contributing to the formation of the final target product are transferred from their original excited state to their other excited state by absorption or excited radiation under the influence of the auxiliary light.
In the second way, for example, in the course of photopolymerization, the photoinitiator molecules in the first local optical field distribution, which are used for generating photoexcitation to be irradiated with the processing material to be irradiated, transition from the ground state to the excited state after absorbing the light energy of the generated light, and the photoinitiator molecules in the excited state undergo chemical reaction to generate photoinitiator radicals, and finally the monomers undergo polymerization reaction to complete the conversion from the monomers to the polymers. The assist light acts on the photoinitiator molecules in the energy excited state after absorbing the energy of the photon to be produced, so that the molecules return to the energy ground state by means of excited radiation, thereby reducing the concentration of photoinitiator radicals in the second local optical field distribution (see fig. 2).
The third mode is a mode of light change and light restoration. Under the action of the manufacturing light, the material to be irradiated finally forms a target product in the irradiated area. The target product causes the material to exhibit the desired property changes in the area of the fabricated light exposure. These changes include the rearrangement of atomic molecules of the material to be irradiated in the first local optical field distribution; the light causes atomic molecules distributed in the first local optical field of the material to be irradiated and processed to generate chemical reaction, and new molecules and new atomic molecule combinations are formed; the light causes the valence state change of the chemical elements distributed in the first local optical field of the material to be irradiated and processed; the light causes the atomic-molecular condensed morphology of the material to be irradiated in the first local optical field distribution to change, and the like. Upon irradiation with the auxiliary light, the auxiliary light brings the final target product formed by the production light in the second local light field distribution back to its original state in the material to be irradiated or to another state which behaves similarly to its original state in a light-resilient manner. The yield of the final target product is therefore lower with the aid of the auxiliary light than without it or the conversion of the raw materials into the final target product is lower. According to different final target products, the specific form can assist light to cause the atomic molecules of the material to be irradiated and processed in the first local optical field distribution to be rearranged again; the auxiliary light causes the atom molecules of the material to be irradiated and processed to generate reverse chemical reaction in the second local optical field distribution, and the original molecules and the original atom-molecule combination are formed; the chemical elements in the material are returned to the original valence state by the auxiliary light; the molecules of the material atoms return to the original condensed form due to the auxiliary light, and so on.
For the third way, for example in chalcogenide glass materials, the manufacturing light passes through the excited material, so that the ordering of atoms in the glass is changed, which mainly includes the breaking of some chemical bonds, the occurrence of new chemical bonds of atoms, and the like. This causes a change in the local properties of the first local optical field distribution of the chalcogenide glass material upon irradiation with the manufacturing light. The auxiliary light excites the chalcogenide glass material, so that the area of the chalcogenide glass material where chemical bonds are broken by the manufacturing light and new chemical bond bonds appear returns to the original state of atomic chemical bond bonds in the chalcogenide glass material under the action of the auxiliary light (as shown in fig. 3 a). The manufacturing light is used for exciting a certain molecule in the original material to be irradiated, so that the molecule is changed into another molecule through isomerization reaction, and further the material to be irradiated has performance change in the manufacturing light irradiation area. The new molecule is a cis-trans isomer of the original molecule, and the auxiliary light excites the new molecule, so that the new molecule returns to an isomer state of the original molecule through isomerization reaction (as shown in fig. 3 b). For example, the manufacturing light excites certain ions in the material to be irradiated, so that they lose an electron, and the chemical valence of the ions changes. The auxiliary light laser irradiates the material to be processed so that the ion acquires an electron again, and the valence state returns to the valence state before the light irradiation. This is often the case with inorganic materials such as glasses and crystals doped with metal ions.
The common laser direct writing technology focuses a beam of light into a direct writing material to form a single focused light spot, and at the focal point of laser focusing, the material absorbs the light energy of the laser and finally generates performance change. Because of the diffraction limit in optical focusing, laser direct writing can typically achieve sub-micron fine degree patterns and structures, the resolution of which is severely limited by the diffraction limit. For different materials, laser direct writing can utilize the threshold effect of the material, so that the diameter of a point and the linear diameter of a line produced by laser direct writing can reach the limit value close to zero theoretically. The center-to-center spacing of two lines produced by laser direct writing is generally severely limited by diffraction limits. By utilizing nonlinear absorption of light to a material, two-photon or multiphoton laser direct writing can realize high-resolution manufacturing with a line center-to-center distance smaller than a numerical aperture value of a wavelength of light divided by 2 times by using a femtosecond laser or the like. The method adopted by the invention is applicable to the above three materials, including but not limited to organic substances (photoresist, resin, monomer), inorganic substances (crystal, glass, quartz, optical fiber, chalcogenide compounds, halogen compounds), inorganic-organic composite materials (ionic liquid, metal ion solution, ionic solution containing single or multiple inorganic elements) and the like.
Furthermore, the manufacturing light can form a two-dimensional lattice, a two-dimensional linear array, a three-dimensional lattice, a three-dimensional linear array or other one, two or three-dimensional complex optical field distribution in the material to be irradiated and processed by other methods, and different complex patterns and structures can be manufactured by scanning different optical field distributions and the local positions of the manufacturing light in the material to be irradiated and processed. Also due to the existence of far-field optical diffraction limit, the light intensity changes of the local edge of the complex light field distribution formed by the manufactured light are not the step-type transition from zero to one after the light intensity normalization, but the light spot is dispersed to present the gradual change similar to the light diffraction. The gradual diffusion degree determines the size of an irradiation area for manufacturing the optical local optical field, which makes it difficult for the irradiated material to obtain a step-type material response at the local edge of the complex optical field distribution. The auxiliary light controls the light field distribution of the auxiliary light in the same material to be irradiated for the local edge of the complex light field distribution formed by the manufacturing light, and scans the local position of the manufacturing light in the material to be irradiated, so that the irradiated material has a part or all of the local edge area of the complex light field distribution of the manufacturing light, the yield of the final target product formed by the manufacturing light is less under the action of the auxiliary light than without the action of the auxiliary light or the conversion rate of the raw material to the final target product is reduced, and the spatial distribution of the final target product formed by the manufacturing light in the material is more concentrated from the edge to the center in the local edge area of the complex light field distribution of the manufacturing light.
The invention provides a double-beam micro-nano optical manufacturing method, which comprises the following steps:
s1, providing manufacturing light according to the material characteristics of the material to be irradiated, wherein the material performance of the material to be irradiated changes under the irradiation of the manufacturing light;
s2, providing an auxiliary light according to the material characteristics of the material to be irradiated, wherein the auxiliary light can block the material property change of the material to be irradiated under the irradiation of the manufacturing light;
s3, regulating and controlling the relative positions of the local light field distribution of the manufacturing light and the auxiliary light in the material to be irradiated, so that the focus of the first local light field distribution formed by the manufacturing light on the material to be irradiated and the focus of the second local light field distribution formed by the auxiliary light on the material to be irradiated coincide in space, and forming a processing light field which is not coincided by the second local light field and acts on the material to be irradiated in the range of the first local light field.
The invention is suitable for three optical local irradiation material forms in optical manufacturing, including single-focus local irradiation, multi-focus local irradiation and linear array local irradiation. The invention applies to three optical manufacturing applications, according to three light localized irradiation material forms, see the following specific examples.
The minimum value of the center distance between two physically separated straight lines that can be produced by the optical production system is referred to as the resolution of the optical production system. The resolution is numerically comparable to the diffraction limit. The resolution referred to hereinafter is the minimum of the distance between the centers of two physically separated straight lines that can be produced by the optical manufacturing system; the higher the resolution, the smaller the minimum.
Example 1:
the invention can be applied to single-focus laser direct writing, as shown in fig. 4, the manufacturing light forms a manufacturing light path, and the auxiliary light forms an auxiliary light path. A beam expander E1 and a beam expander E2 are respectively placed in front of the fabrication light and the auxiliary light, and spatial phase modulators P1 and P2 are respectively placed behind the beam expanders. E1 and P1 are coaxially arranged, E2 and P2 are coaxially arranged, and the manufacturing light and the auxiliary light which are subjected to beam expansion and phase modulation are combined through a dichroic mirror D and are simultaneously focused on a material to be irradiated and processed through an objective lens after being combined.
A single focus feature size reduction can be achieved by the combined action of the fabrication light and the assist light. As shown in fig. 5, the manufacturing light is focused into the material to be irradiated by shaping and expanding, and a gaussian-shaped light spot is generally formed; as shown in fig. 6, to realize the reduction of the feature size by single-point direct writing on the focusing plane, the auxiliary light is shaped and expanded, and is focused into the material to be irradiated and processed by the modulation of a 2 pi vortex phase plate or a space optical phase modulator with equivalent function, so as to generally form a doughnut-shaped hollow light spot with zero intensity at the center position; as shown in fig. 7, the feature size reduction can be achieved by single-point direct writing on the focal plane by making the two spot centers coincide in space and acting on the material mentioned in the present invention.
It should be noted that, to achieve the reduction of the spatial three-dimensional single-point direct writing feature size once, the auxiliary light may sequentially pass through a 2 pi vortex phase plate (as shown in fig. 8 (a)) and a pi vortex phase plate (as shown in fig. 8 (b)) or pass through a phase plate in which the 2 pi vortex phase plate and the pi vortex phase plate are stacked together; the auxiliary light may also be modulated by a functionally equivalent spatial optical phase modulator. In order to directly write and manufacture patterns and structures by using laser with auxiliary light, a sample scanning method can be used for enabling the focal points of the manufacturing light and the auxiliary light to scan and travel a special track in a material; the focus of the production light and the auxiliary light may also be scanned out of a particular trajectory in the stationary material using galvanometer scanning. The error of the coincidence of the manufacturing light and the center position of the auxiliary light focal point is smaller than a quarter of the minimum light wavelength between the manufacturing light and the auxiliary light.
The processing density can be increased by the combined action of the manufacturing light and the auxiliary light. As shown in fig. 9, the manufacturing light forms a light spot close to the diffraction limit, and the processing of a plurality of focuses is realized by scanning the manufacturing light focus in the material, wherein the distance between two adjacent focuses is equal to or larger than the characteristic size of the manufacturing light processing; as shown in fig. 10, the feature size of the single-spot laser direct writing is reduced under the action of the auxiliary light, the manufacturing light and the auxiliary light are synchronously scanned in the material, so that the processing of a plurality of focuses can be realized, and the feature size of two adjacent focuses is equal to or larger than the feature size of the single focus after the reduction.
Example 2:
conventional single focus laser direct writing techniques focus a beam of light into the direct-written material generally forming only a single focused spot. The method is applied to a multi-focus laser direct writing technology, and can realize that a beam of light is focused into a direct writing material to form a plurality of focusing light spots by regulating and controlling the light intensity, the phase and the polarization of the manufactured light. Generally, the phase adjustment of light by using a spatial light modulator can be realized.
The multi-focus laser direct writing is the same as the single-focus laser direct writing device shown in fig. 4, and it should be noted that different spatial phase modulators are used for the single-focus laser direct writing and the multi-focus laser direct writing. As shown in fig. 11, after the manufacturing light is expanded and subjected to spatial phase modulation, a multi-focus spot with gaussian distribution can also be formed; as shown in fig. 12, to realize multi-focus direct writing reduction of feature size on the focusing plane, the auxiliary light is shaped and expanded, and is superimposed with a 2 pi vortex phase plate and spatial phase modulation to generate a multi-focus hollow light spot with zero central intensity; as shown in fig. 13, the feature size reduction of multi-focus direct writing on the focal plane can be realized by overlapping the centers of the two sets of spots in space and acting on the material of the invention.
And the processing density of the array can be improved under the combined action of the manufacturing light and the auxiliary light. Manufacturing light spots with array patterns close to the diffraction limit, wherein the center distance between two adjacent patterns in the array is equal to or larger than the diameter of a single pattern, arranging the array patterns formed by the auxiliary light and the manufacturing light, and superposing the two sets of array patterns formed by the manufacturing light and the auxiliary light to realize the array patterns with the characteristic size reduced in the material to be irradiated and processed. The characteristic size of the array pattern can be reduced only by single processing, the center distance between two adjacent focus patterns is not reduced, and the characteristic size is equal to the size when only manufacturing light exists.
In addition, a plurality of sets of array patterns can be synchronously walked in the material to be irradiated by the manufacturing light and the auxiliary light by a sample scanning method, and the space is fully utilized. The sets of array patterns may be the same or different, as shown in fig. 14 and 15. In the same way, a stronger mechanical strength than that of the auxiliary light is achieved.
It should be noted that the three-dimensional spatial resolution of the structure manufactured by the direct writing of the dual-beam laser is higher than that of the original structure, and the manufactured pattern or structure has higher mechanical strength. The manufacture of specific patterns and structures is realized by sample scanning or galvanometer laser scanning which is the same as single-focus laser direct writing. Compared with single focus laser direct writing, the multi-focus laser direct writing method can greatly improve the manufacturing efficiency. The error of the coincidence of the manufacturing light focal point and the auxiliary light focal point center position corresponding to the manufacturing light and the auxiliary light focal point in the manufacturing light multi-focal point is less than one fourth of the minimum light wavelength between the manufacturing light and the auxiliary light.
Example 3:
the invention can be applied to holographic grating manufacture. The holographic grating is obtained by imaging interference fringes on a photosensitive material by utilizing a coherent superposition principle of light, and then removing a photosensitive (or non-photosensitive) part by means of developing technology. As shown in fig. 16, the manufacturing light and the auxiliary light are respectively formed into two beams to form interference fringes at the same position in the holographic grating manufacturing process. The manufacturing light is split into two beams of light with the same power by a beam splitter B1, and the two beams of light are transmitted by a beam expander E11And E12After beam expansion, the beams respectively reach a reflector M11And M12From M11And M12After reflection, focusing on a photosensitive screen to form interference fringes; the auxiliary light is also split into two beams of equal power by the beam splitter B2, and the two beams are passed through the beam expander E21And E22After beam expansion, the beams respectively reach a reflector M21And M22From M21And M22Rear focusing of the mirrorAnother set of interference fringes is formed on the photosensitive screen.
As shown in fig. 17, the manufacturing light is split into two beams having the same splitting power, and after shaping and spreading, the two beams meet in space to form interference fringes, and for each fringe, the light intensity distribution perpendicular to the fringe direction can be regarded as gaussian distribution, and gradually decreases from the center to the edge. As shown in fig. 18, the auxiliary light is expanded and shaped to form another set of interference fringes at the same position as the manufacturing light, and the grating fringe width can be reduced by adjusting the overlapping portion of the two sets of interference fringes. The two interference fringes may be equally spaced or unequally spaced but in a certain proportion. The spacing of the holographic grating fringes after development is relatively wide, as shown in FIG. 19, only in the presence of the fabrication light; the manufacturing light and the auxiliary light cooperate to effectively reduce the holographic grating fringe spacing, as shown in FIG. 20.
Example 4:
the invention is also applicable to integrated circuit lithography, including mask fabrication. The common photoetching technology adopts single beam to manufacture light irradiation photoresist, and the photoresist performs a photo-physical chemical reaction under the action of irradiation light, so that the performance of the irradiated part of the photoresist is changed. The photoresist of the non-irradiated part is kept unchanged, and the pattern which is designed in advance and is not irradiated by light can be left on the substrate through development treatment, so that the transfer printing processing of the designed pattern is completed. The double-beam photoetching technology realizes micro-nano photoetching processing by utilizing a special photoresist to manufacture and assist two different photochemical reactions of light beams: the device is the same as theembodiments 1 and 2, and the arrangement shape is similar, the photo-excited photoresist is manufactured to generate the photo-physical chemical reaction, and the performance change of the same photoresist after being irradiated by light in the common photoetching process is generated; the assist light acts on the photoresist to completely or partially block the photo-physical chemical reaction of the photoresist caused by the fabrication light. So that the yield of the final target product formed by the manufacturing light in the photoresist is less under the action of the assist light than without the assist light or the conversion of the raw material to the final target product is low. By regulating and controlling the relative distribution of the spatial light fields of the manufacturing light and the auxiliary light, the spatial distribution of a final target product formed by the manufacturing light in the material is more concentrated from the edge to the center in a local edge area for manufacturing the optical complex light field distribution. When the manufacturing light is a 0-dimensional point-like spot, the auxiliary light may be a filled-circle-like spot modulated to have zero central light intensity. By controlling the response of the material to the manufacturing light and the auxiliary light, only the portion of the photoresist at the position where the light intensity of the center of the auxiliary light is zero can completely perform the photo-physical-chemical reaction caused by the manufacturing light, and the other portion of the photoresist can be prevented to an unnecessary extent by the action of the auxiliary light. The spatial distribution of the final target product formed by the manufacturing light in the final material is concentrated towards the position where the light intensity of the center of the auxiliary light is zero, so that after the development treatment, the transferred pattern has smaller characteristic size and smaller resolution.
Example 5:
in a general 3D printing process, a beam of light is directly focused on a photosensitive material to form a single focusing light spot, and the photosensitive material can be rapidly subjected to physical and chemical changes in a short time and then is solidified.
The photosensitive material is subjected to photophysical chemical reaction by manufacturing the light irradiation photosensitive material, so that the same performance change of the photosensitive material after being irradiated by light in the common 3D printing process is generated; the assist light acts on the photosensitive material to completely or partially prevent the photosensitive material from undergoing a photo-physical-chemical reaction caused by the manufacturing light. So that the yield of the final target product formed by the manufacturing light in the photosensitive material is less under the action of the auxiliary light than when the auxiliary light is not acted on or the conversion rate of the raw material to the final target product is low. By regulating and controlling the relative distribution of the spatial light fields of the manufacturing light and the auxiliary light, the spatial distribution of a final target product formed by the manufacturing light in the material is more concentrated from the edge to the center in a local edge area for manufacturing the optical complex light field distribution. When the manufacturing light is a 0-dimensional point-like spot, the auxiliary light may be a filled-circle-like spot modulated to have zero central light intensity. By controlling the response of the material to the production light and the auxiliary light, only the portion of the photosensitive material at the position where the intensity of the central light of the auxiliary light is zero can completely perform the photophysical reaction caused by the production light, and the other portion of the photosensitive material can prevent the photophysical reaction caused by the production light to an unnecessary extent due to the effect of the auxiliary light. The spatial distribution of the final target product formed by the manufacturing light in the final material is concentrated to the position where the light intensity of the auxiliary light center is zero, so that the formed structure has smaller characteristic size and more excellent mechanical strength.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent replacements, improvements, etc. within the spirit and principle of the present invention should be included in the protection scope of the present invention.
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| CN110967931A (en)* | 2018-09-30 | 2020-04-07 | 上海微电子装备（集团）股份有限公司 | Exposure apparatus and exposure method |
| CN110262193B (en)* | 2019-05-17 | 2021-03-30 | 华中科技大学 | Light beam alignment system and method applied to double-light beam lithography |
| CN110286560A (en)* | 2019-05-17 | 2019-09-27 | 华中科技大学 | A mask manufacturing method applied to double-beam laser lithography |
| CN111880254B (en)* | 2020-07-14 | 2021-05-14 | 浙江大学 | A kind of preparation method of grating with diffraction efficiency continuously changing |
| CN111880383A (en)* | 2020-09-11 | 2020-11-03 | 华中科技大学 | A high-density lithography pattern processing method |
| CN112034691A (en)* | 2020-10-10 | 2020-12-04 | 华中科技大学 | A double-beam projection lithography device and method for a yin-yang text complementary light intensity mask |
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