Specific embodiment
For the purpose of the present invention, technical solution and advantage is more clearly understood, develop simultaneously embodiment referring to the drawings,The present invention is described in more detail.It should be noted that attached drawing uses very simplified form and uses non-accurate ratioExample, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Flexible display currently based on OLED is that OLED device is made in array substrate, such as is made on substrate firstMake the pixel region of array distribution to obtain array substrate, each pixel region is each formed with driving corresponding OLED pixel unitPixel-driving circuit (including thin film transistor (TFT) TFT)；Then OLED device is made in the array substrate, the OLED formedDevice layer is included in the multiple OLED pixel units formed in array substrate, wherein, each OLED pixel unit may include multipleSub-pixel unit is also formed with the insulating layer (pillar) for defining luminous zone between multiple sub-pixel units, per heightPixel unit, which is included in, is sequentially overlapped the anode layer to be formed, luminescent layer and cathode layer in array substrate, wherein luminescent layer is usualOverlaying structure for multilayer material.Since the organic material in luminescent layer is easily influenced and hydraulic performance decline by steam and oxygen, becauseThis is usually after OLED device layer is formed, it is also necessary to which the pixel region in array substrate is packaged.
Inventor has found that using the OLED flexible displays that current technique is formed when stress is bent, it is curvedThe OLED pixel unit of folding area easily fails, further study show that, the cathode layer of bent area in bending easily with lower floor's materialMaterial separation so that OLED pixel element failure.Fig. 1 is the existing flexible OLED display photograph that cathode detaches when stress is bentPiece, as shown in Figure 1, the OLED flexible displays that prior art is formed, cathode layer 10 and the luminescent layer 20 of lower floor and insulating layer 30Occurs separation when stress is bent.
To this by taking the OLED display unit formed in substrate (being, for example, array substrate) as an example in the present embodimentThe OLED device structure 100 of invention illustrates, but OLED device structure 100 is not limited to this, OLED provided by the present inventionDevice architecture 100 can be applied to various OLED antetype devices, OLED display module, OLED luminescent panels etc..
Fig. 2 a and Fig. 2 b are the vertical views of the OLED device structure 100 of the embodiment of the present invention.As shown in Figure 2 a, OLED deviceStructure 100 includes three sub-pixel units 110 for setting or being formed on a substrate 200, and three sub-pixel units 110 are respectively used toR (red), G (green), B (indigo plant) different colours are shown, so as to form a display unit, in the present embodiment, with three sub-pixel listsLuminous zone of the region of first 110 light extractions as sub-pixel unit 110, also, the luminous zone of different colours, that is, R, G, B luminous zone quiltInsulating layer 120 surrounds, and the region between R, G, B luminous zone is non-light-emitting area.In non-light-emitting area, it is also formed with lock room 130.Do not include insulating layer 120 in lock room 130, and also do not shine.
In the present embodiment, the sub-pixel unit 110 of OLED device structure 100 can also be more than or less than three, Huo ZheyeIt can remove or increase a kind of sub-pixel unit 110 of other colors, also, the shape of sub-pixel unit 110 and arrangement sideFormula can be designed according to the various disclosed shapes in this field and arrangement mode, and be not limited to the design method of Fig. 2 a.It is bowingIn view, on the direction on 200 surface of array substrate is parallel to, shape may also be arrangement as shown in Figure 2 b for lock room 130,Compared with Fig. 2 a, 120 area of insulating layer reduces, and the area of lock room 130 increases, however, the present invention is not limited thereto, same aobviousShow in the range of unit, two or more lock rooms 130 can also be set.
Fig. 3 is the diagrammatic cross-section of the OLED device structure 100 of the embodiment of the present invention.Specifically, Fig. 3 is along AB in Fig. 2 aThe diagrammatic cross-section of OLED device structure 100 on direction.
OLED device structure 100 may be disposed at a substrate 200, and substrate 200 is, for example, an array substrate, it may include mainly intoIt is SiO to divide2Glass material, but not limited to this, substrate 200 can include rigidity or flexible substrate, when being designed as sub-pixel listWhen light in member 110 shows equipment along the bottom emissive type being emitted towards the direction of substrate 200, substrate should be by transparent materialMaterial is formed；However, when the light being designed as in sub-pixel unit 110 is along the top-emission of the direction formation far from substrate 200When type shows equipment, substrate need not include transparent material, and in this case, substrate can be formed by metal, when substrate includes goldDuring category, substrate may include but be not limited at least one of following material：Iron (Fe), chromium (Cr), manganese (Mn), nickel (Ni), titanium(Ti), molybdenum (Mo), stainless steel (SUS), invar alloy (Invar alloy), because of Cornell alloy (Inconel alloy) andCovar (Kovar alloy).
In preferred embodiment, substrate 200 includes flexible substrate, and flexible substrate may include plastic material, and plastic material can beThe organic material selected in the group formed from following material：Polyether sulfone (PES), polyacrylate (PAR), polyetherimide(PEI), poly- naphthalene dimethyl glycol ester (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate,Polyimides, makrolon (PC), cellulose triacetate (TAC) and cellulose-acetate propionate (CAP), they are insulationOrganic material.
In the luminous zone of sub-pixel unit 110, it may include the anode layer 111 that sets gradually or formed on 200 surface of substrate,Luminescent layer 112 and cathode layer 113, wherein, luminescent layer 112 may include being sequentially overlapped setting or formation on 111 surface of anode layerMultilayered structure, wherein may include generating the light emitting functional layer 101 of R, G, B different colours and other materials layer respectively102 etc., the present invention does not limit the composition of luminescent layer 112, can include method and structure well known in the art.AnotherIn embodiment, sub-pixel unit 110 is initially formed cathode layer 113 on 200 surface of substrate, i.e. luminous zone is included in 200 surface of substrateCathode layer 213, luminescent layer 212 and the anode layer 211 for setting gradually or being formed.
In preferred embodiment, the anode layer 111 and cathode layer 113 of different subpixel unit 110 are using same film forming workSkill makes, and may include identical material, cathode layer 113 so as to be set to R, G, B sub-pixel unit of luminous zone its anode layer 111Also it may include identical material.In addition, for luminescent layer 112, in addition to the light emitting functional layer 101 for light extraction, other materialsLayer 102 can also utilize same film-forming process to make.
In order to make sub-pixel unit 110 that can independently shine, according to the distribution of luminous zone, anode layer 111 would generally be etchedTo form the anode of different subpixel unit 110, and the cathode layer 113 of three sub-pixel units 110 can be connected together, asCommon electrode.
In the present embodiment, the locking layer 114 being electrically insulated with anode layer 111, such as locking layer are additionally provided in non-light-emitting area114 can set or be formed in the same process layer (being formed using same film-forming process) of anode layer 111, but the present invention is not limited toThis, locking layer 114 can also be formed, such as locking layer 114 can also set or be formed before or after the formation of anode layer 111In the substrate 200 of the lower section of anode layer 111, for example, can be on substrate planarization layer in or substrate and planarization layer betweenMaterial layer in setting locking layer 114 either locking layer 114 may also be disposed on the surface or top of substrate 200, preferred embodimentIn, after locking layer 114 sets or be formed in the formation of anode layer 111, before luminescent layer 112 is formed, in 111 side of anode layerIncrease the adhesive force of cathode layer 113.But not limited to this, locking layer 114 can also be after the formation of luminescent layer 112 in luminescent layer112 unlapped region settings are formed.
In the present embodiment, locking layer 114 is used to enhance the adhesive force of cathode layer 113 and subsurface material, cathode layer 113 and lockThe adhesive force of given layer 114 is more than the adhesive force of cathode layer 113 and luminescent layer 112.Adhesive force refers to the material of cathode layer 113 hereinMaterial and the bond properties between the material of locking layer 114 or the material of cathode layer 113 and the material of luminescent layer 112, i.e. cathodeThe material of layer 113 is attached to the resistance to separating capacity after other materials surface.Cathode layer 113 is usually using vacuum thermal evaporation workSkill is deposited on setting or is formed with 200 surface of substrate of luminescent layer 112, and therefore, 113 material of cathode layer under gas phase state can be attachedIt on subsurface material, according to the difference of subsurface material, the adhesive force of 113 material of cathode layer also differs, the size of adhesive forceIt is obtained using well known attachment force measuring method measurement, in the present embodiment, sharp can also test cathode layer with the following method113 with the adhesive force of locking layer 114 or luminescent layer 112：Composite bed I and composite bed II are formed, wherein composite bed I includes testLayer and the cathode layer 113 for covering the test layer surface, composite bed II include 112 surface of luminescent layer 112 and covering luminescent layerCathode layer 113, in composite bed I and composite bed II after being tested by identical folding s tress, for example, by scanning electron microscopyMirror (SEM) compares the separate condition of composite bed I and cathode layer 113 in composite bed II, is tested when by identical folding s tress, compoundLayer I in cathode layer 113 do not detached with test layer and in composite bed II cathode layer 113 detached with luminescent layer 112 orThe separation degree of cathode layer 113 and test layer is less than point of cathode layer 113 and luminescent layer 112 in composite bed II in person's composite bed IFrom degree, it is believed that the adhesive force of cathode layer 113 and the test layer is more than the adhesive force of cathode layer 113 and luminescent layer 112.RootIt is different according to the material selection of cathode layer 113, it can select with the adhesive force of 113 material of cathode layer better than the material with luminescent layer 112Expect the test layer material of adhesive force as locking layer 114.
In the present embodiment, locking layer 114 is formed with anode layer 111 using same technique, specifically, for example in substrate 200Upper elder generation's Deposition anode layer 111, anode layer 111 may include metal or transparent conductive oxide (such as ITO, i.e. indium tin oxide),Then it etches anode layer 111 and forms the locking layer being isolated with the anode layer 111 (i.e. the anode of sub-pixel unit 110) of luminous zone114, by means of which, the material and thickness of locking layer 114 are identical with anode layer 111.However, the present invention is not limited thereto, such asIn another embodiment, the available another technique with the difference of 111 film-forming process of anode layer of locking layer 114 is formed.
Locking layer 114 can be conductive material, such as may include same or like with anode layer 111 or cathode layer 113Material, it is preferred that locking layer includes the material identical with cathode layer 113, such as aluminium (Al), magnesium (Mg), calcium (Ca) elemental metalsOr metal alloy.But not limited to this, locking layer 114 can include the various and preferable material of 113 adhesive force of cathode layer, such asIn certain embodiments, locking layer 114 may include inorganic or organic material, and certain metal-cured doses can also reside in wherein.
In the present embodiment, although locking layer 114 all includes conductive material with anode layer 111, since locking layer 114 is mainFor being in contact or connecting with cathode layer 113 to increase the adhesive force of cathode layer 113, do not have electrode function, in order to keep awayExempt from short circuit, therefore locking layer 114 should be isolated or disconnect, therewith similarly, locking layer 114 and base with the anode of sub-pixel unit 110Other material layers not being electrically connected with cathode layer 113 on bottom 200 also should be insulation.
As shown in figs 2 a and 3, OLED device structure 100 further includes setting or the insulating layer 120 for being formed in non-light-emitting area(pillar), between insulating layer 120 sets or be formed in sub-pixel unit 110, insulating layer 120 surrounds sub-pixel unit 110Luminous zone, that is, the side wall of insulating layer 120 defines the luminous opening of its sub-pixel unit 110 accommodated, and insulating layer 120 can wrapInclude one or more layers that be superimposed on 200 surface of substrate.It may include that the material, the light that absorb at least part light are anti-in insulating layer 120Material or light-scattering material are penetrated, it is translucent to visible ray (such as the light of wavelength in the range of 380~750nm) that can also includeOr opaque material or insulating layer 120 may include such as silica, silicon nitride, silicon oxynitride, aluminium oxide, titanium oxide, oxygenChange tantalum or the inorganic oxide of zinc oxide or the inorganic insulating material of inorganic nitride, may also include such as black-matrix materialOpaque material.But the present invention is not limited to this.In certain embodiments, it is translucent to visible ray that locking layer 114, which also includes,Or opaque material, to avoid the luminous zone range of sub-pixel unit 110 is influenced.
In the present embodiment, OLED device structure 100 further includes the lock room 130 for being set to non-light-emitting area.Lock room 130 canIt is limited by the side wall of insulating layer 120 in non-light-emitting area, as shown in figure 3, lock room 130 is on the direction of substrate 200,Section can be inverted trapezoidal, but not limited to this, according to the difference of preparation method, section can also be the other shapes such as rectangular,Lock room 130 is e.g. surrounded the groove of formation, 114 surface of bottom-exposed locking layer of groove by insulating layer 120.
The luminescent layer 112 of OLED device structure 100 sets or is formed in 111 surface of anode layer, in the present embodiment, luminescent layer112 include light emitting functional layer 101 and other materials layer 102, and wherein light emitting functional layer 101 is set to sub-pixel unit 110Luminous zone, for generating the material of main part (host) of photon and dopant material (dopant) in OLED device structure 100, and itsHis material layer 102 includes the functional layer material for increasing optical transport and emission effciency.According to the difference of sub-pixel unit 110,Using different light shields (or mask), setting or formation light emitting functional layer 101 in luminous zone, and 102 He of other materials layerCathode layer 113 can also be covered in 120 surface of insulating layer, but in order to make locking layer 114 and cathode layer in addition to covering luminous zone113 contacts, other materials layer 102 do not cover lock room 130.
The cathode layer 113 for setting or being formed on 112 surface of luminescent layer can cover the luminous zone of OLED device structure 100 and non-Luminous zone, i.e. cathode layer 113 can cover 110 luminous zone of sub-pixel unit, insulating layer 120 and above-mentioned groove, also, cathode layer113 extend along the surface of insulating layer 120 and are contacted with the locking layer 114 in groove, so as to increase in OLED device structure 100The adhesive force of cathode layer 113.
In lock room 130, cathode layer 113 is contacted with being set to the locking layer 114 of anode layer 111, for adjacent sub- pictureFor plain unit 110, cathode layer 113 also covers 120 surface of insulating layer and along insulating layer in addition to the surface of covering luminous zone120 surface to 111 direction of anode layer extend, and cathode layer 113 in 111 side of anode layer in not 120 He of contact insulation layerIt is contacted in the case of other materials layer 102 with locking layer 114, so as to form protection to the luminous zone of sub-pixel unit 110, favorablyIn the ply adhesion of enhancing sub-pixel unit 110, the separation of cathode layer 113 when being bent is avoided to lead to sub-pixel unit 110Failure.
After cathode layer 113 is formed, it can continue to set on its surface or form encapsulated layer 140, for being used for flexibilityThe OLED device structure 100 of display, encapsulated layer 140 are preferably thin-film encapsulation layer.
Encapsulated layer 140 can include the organic film either lamination knot of inorganic film or organic film and inorganic filmStructure, in the present embodiment, encapsulated layer 140 includes the multilayered structure of inorganic film/organic film/inorganic film, wherein, inorganic filmThe water and oxygen barrier property of middle inorganic material is preferable, and preferred inorganic material is：Silica (SiO2), silicon nitride (SiN), aluminium oxide(Al2O3), titanium oxide (TiO2), but its bend resistance ability for organic material of these inorganic material is poor, thus twoOne layer of organic film can be added in layer inorganic film, the organic material in organic film can fill recess present on substrate,Flatness is improved, is conducive to subsequently through such as chemical vapor deposition (CVD), physical vapour deposition (PVD) (PVD) or atomic layer deposition(ALD) inorganic film on method growth upper strata, and bend resistance better performances of organic material, the material of organic film can be withIt is PASMa (polymaleic anhydride aminostyryl), P (GMA-co-DFHA) (poly (glycidyl methacrylate) acrylic acid 12Fluorine heptyl ester), one kind or combination thereof in P (npMA-co-EGDA) (penta ethylene glycol diacrylate of polyacrylic acid).This hairIt is bright without being limited thereto.
The thickness of encapsulated layer 140 preferably between 200nm~20 μm, can according to selected film layer structure and realityIt needs to be adjusted.
Above-mentioned OLED device structure 100 includes anode layer 111, cathode layer 113 in luminous zone and between 111 and of anode layerLuminescent layer 112 between cathode layer 113, locking layer 114 is additionally provided in non-light-emitting area, and locking layer 114 and cathode layer 113 are closeThe surface contact of anode layer 111, the adhesive force of cathode layer 113 and locking layer 114 are attached more than cathode layer 113 and luminescent layer 112Put forth effort.The region that the cathode layer 113 of OLED device structure 100 is contacted with locking layer 114 is lock room 130, is locked with being not provided withThe OLED device structure of layer is compared, due to the cathode layer 113 of 100 luminous zone of OLED device structure and the cathode layer of lock room 130113 interconnect, and in lock room 130, do not contain cathode layer 113 with luminescent layer 112 (including light emitting functional layer 101 and other materialsThe bed of material 102) contact interface, and cathode layer 113 is contacted with the locking layer 114 larger compared to 112 adhesive force of luminescent layer, is hadHelp improve the adhesive force of cathode layer and subsurface material, can play the role of locking luminous zone, this implementation when stress is bentIn example, locking layer 114 helps to improve the adhesive force of the cathode layer 113 of sub-pixel unit 110, can be played when stress is bentThe effect of luminous zone is locked, avoids sub-pixel unit 110 since cathode layer 113 detaches and fails.
In addition the present embodiment also provides a kind of flexible display apparatus, include above-mentioned OLED device structure 100 in its viewing area.In the present embodiment, which includes the multiple display units for making or being formed on a substrate 200, further, oftenA display unit may include multiple sub-pixel units 110, also, wherein at least one display unit has above-mentioned OLED deviceStructure 100.Fig. 4 a and Fig. 4 b are the vertical views of the flexible display apparatus viewing area of the present embodiment.
As shown in fig. 4 a, each display unit of the flexible display apparatus is respectively provided with OLED device structure 100, due to OLEDDevice architecture 100 is provided with lock room 130 in non-light-emitting area, and the cathode layer 113 in lock room 130 is contacted with locking layer 114, cloudyPole layer 113 and the adhesive force of locking layer 114 are more than the adhesive force of cathode layer 113 and luminescent layer 112, so as to increase cathode layer113 adhesive force, compared with the display unit for being not provided with lock room, when stress is bent, the cathode layer of OLED device structure 100113 are adhered to by the locking layer 114 of non-light-emitting area, thus more difficult other materials layer 102 or light emitting functional layer 101 with lower floor dividesFrom so as to effectively display unit be avoided to fail.
As shown in Figure 4 b, for being set to the different display units on 200 surface of substrate, there can be common lock room130, in other words, lock room 130 can be not limited in some display unit, but can as needed display unit itBetween non-light-emitting area setting.Also, in some embodiments, can only it be set in the partly or completely display unit of bent areaLock room 130 is put, selectively to increase the adhesive force of cathode layer 113.
The size and distribution density of lock room 130 (or locking layer 114) can be according to the bending characteristics of flexible display apparatusBe arranged as required to, for example, can easily occur in the viewing area of flexible display apparatus cathode layer separation region setting the gross area compared withThe lock room 130 (or locking layer 114) of (or closeer distribution) greatly, and in the non-bent area of viewing area or it is not susceptible to cathode layerThe bent area of separation, can be not provided with lock room 130 or set the gross area smaller (or diluter distribution) lock room 130 (orLocking layer 114), the present invention is not limited thereto, for example, in another embodiment, lock room 130 (or locking layer 114) can also be setThe periphery of the viewing area (or pixel region) in substrate 200 is placed in, to increase the bend resistance ability of non-display area.
It should be noted that in the present embodiment due to cathode layer 113 by be set to insulating layer 120 limit in the range of lockDetermine 130 part of area to connect or contact with locking layer 114, but in order to avoid cathode layer 113 and anode layer 111, other be set to it is softProperty display device electrode contact lead to short circuit, in preferred embodiment, locking layer 114 in substrate 200 other not with cathode layerThe material layer isolation of 113 electrical connections.
It is understood that above example is only unrestricted to describe technical scheme of the present invention, for any ripeFor knowing those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the skill of the disclosure aboveArt content makes technical solution of the present invention possible changes and modifications or is revised as the equivalent embodiment of equivalent variations.Therefore,Every content without departing from technical solution of the present invention, technical spirit according to the present invention are made to the above embodiment any simpleModification, equivalent variations and modification, in the range of still falling within technical solution of the present invention protection.