Invention content
In view of this, the object of the present invention is to provide MEMS structure, MEMS component and its manufacturing method, wherein, using envelopeThe protruding portion for closing layer forms embolism structure filling release aperture and closed cavity, to improve the job stability of MEMS structure and canBy property.
According to a kind of method for manufacturing MEMS structure provided by the invention, including：Form template layer；In the templateThe first groove and multiple second grooves around first groove are formed in layer；Stop-layer is formed on the template layer,The stop-layer conformally covers the template layer；Form sacrificial layer on the stop-layer, the sacrificial layer filling described theOne groove and the multiple second groove；Mask layer, the mask layer covering are formed on the stop-layer and the sacrificial layerThe sacrificial layer；Multiple release apertures are formed on the mask layer；Via the multiple release aperture and the multiple second grooveIt removes the sacrificial layer and forms cavity；And confining bed is formed on the mask layer, the confining bed closing is the multiple to be releasedDischarge hole, wherein, the multiple second groove is corresponding with the position of the release aperture, and the confining bed includes multiple protruding portion,The multiple protruding portion is inserted into across the multiple release aperture in the multiple second groove, so as to form embolism to closeState multiple release apertures.
Preferably, wherein, first groove and the multiple second groove are formed using etching so that described first is recessedSlot and the multiple second groove extend downwardly the first depth and the second depth from the surface of the template layer respectively, wherein, instituteThe first depth is stated more than the second depth.
Preferably, wherein, first groove penetrates the template layer, so as to first depth and the template layerThickness is corresponding.
Preferably, wherein, the multiple second groove is respectively included in the first opening of the surface exposure of the template layer,And the second opening of the side wall exposure in first groove, first opening are one corresponding to the multiple release apertureRelease aperture connects, and second opening is connected with first groove.
Preferably, wherein, the supporting layer to be formed and be used to support the template layer is further included.
Preferably, wherein, the lateral dimension of the release aperture is 0.1 micron to 5 microns.
Preferably, wherein, the template layer is any by being selected from metal, semiconductor, non-crystalline silicon, silica and silicon nitrideMaterial forms.
Preferably, wherein, the confining bed is formed by being selected from aluminium nitride, silica and any material of silicon nitride.
Preferably, wherein, the cross sectional shape of the multiple release aperture is selected from circle, ellipse, triangle, rectangle, lacksAny one of angular moment shape, pentagon.
Preferably, wherein, the cross sectional shape of the multiple second groove be selected from circle, ellipse, triangle, rectangle,Any one of unfilled corner rectangle, pentagon.
Preferably, in addition on the confining bed form laminated piezoelectric, the laminated piezoelectric include stacking gradually theOne electrode, piezoelectric layer and second electrode.
Preferably, wherein, the sacrificial layer is made of silica.
Preferably, wherein, the step of forming cavity, is included using gas phase etching, wherein the etching gas used is HF.
Preferably, wherein, the mask layer and the stop-layer are made of respectively corrosion resistant material.
Preferably, wherein, the corrosion resistant material includes any one in tantalum, gold, aluminium nitride, aluminium oxide and non-crystalline siliconKind.
According to another MEMS structure provided by the invention, including：Template layer, the template layer include limiting cavityThe first groove；Stop-layer on the template layer, the stop-layer cover the bottom and side wall of first groove, fromAnd it is formed and the corresponding cavity of first groove；Mask layer on the cavity, the mask layer include withMultiple release apertures of the cavity connection；And the confining bed on the mask layer, the confining bed closing are the multipleRelease aperture, wherein, the template layer further includes multiple second grooves around first groove, the multiple second groove withThe position of the release aperture is corresponding, and the confining bed includes multiple protruding portion, and the multiple protruding portion passes through the multiple releaseDischarge hole is inserted into the multiple second groove, so as to form embolism to close the multiple release aperture, wherein, described first is recessedFirst depth of slot is more than the second depth of the second groove.
Preferably, wherein, the multiple second groove is respectively included in the first opening of the surface exposure of the template layer,And the second opening of the side wall exposure in first groove, first opening are one corresponding to the multiple release apertureRelease aperture connects, and second opening is connected with first groove.
Preferably, it further includes：It is used to support the supporting layer of the template layer.
Preferably, wherein, first groove penetrates the template layer.
Preferably, wherein, the lateral dimension of the release aperture is 0.1 micron to 5 microns.
Preferably, wherein, the template layer is any by being selected from metal, semiconductor, non-crystalline silicon, silica and silicon nitrideMaterial forms.
Preferably, wherein, the mask layer and the stop-layer are made of respectively corrosion resistant material.
Preferably, wherein, the corrosion resistant material includes any one in tantalum, gold, aluminium nitride, aluminium oxide and non-crystalline siliconKind.
Preferably, wherein, the confining bed is formed by being selected from aluminium nitride, silica and any material of silicon nitride.
Preferably, the cross sectional shape of the multiple release aperture is selected from circle, ellipse, triangle, rectangle, unfilled corner squareAny one of shape, pentagon.
Preferably, wherein, the cross sectional shape of the multiple second groove be selected from circle, ellipse, triangle, rectangle,Any one of unfilled corner rectangle, pentagon.
Preferably, it further includes：Laminated piezoelectric on the confining bed.
Preferably, wherein, the laminated piezoelectric includes the first electrode, piezoelectric layer and the second electrode that stack gradually.
Preferably, it further includes：It is used to support the supporting layer of the template layer.
According to another MEMS component provided by the invention, including：Cmos circuit；And according in claim 16 to 28Any one of them MEMS structure, wherein, the cmos circuit is connected with the MEMS structure, for the MEMS structureDrive signal is provided and receives the detection signal of the MEMS structure.
According to another MEMS component provided by the invention, including：TFT circuit；And according in claim 16 to 29Any one of them MEMS structure, wherein, the TFT circuit is connected with the MEMS structure, described in selectively inciting somebody to actionA part for MEMS structure is connected to external circuit, and the external circuit provides drive signal and reception to the MEMS structureThe detection signal of the MEMS structure.
The MEMS structure and its manufacturing method of the present invention is limited the size of cavity using the first groove in template layer, adoptedIt is inserted into the multiple protruding portion in confining bed in the second groove of the release aperture in mask layer and template layer, so as to form embolism,It is steady so as to improve the compatibility with CMOS technology and the work for improving MEMS structure to improve sealing effect and improve mechanical strengthQualitative and reliability.
In a preferred embodiment, multiple second grooves are distributed in the periphery of cavity, so as to maintain the integrality of mask layerAnd mechanical strength so that the mask layer can support confining bed.
This method can obtain size uniform and accurate vacuum cavity, and stop-layer and mask layer can be utilized to completely cut offThe gas of interlayer dielectric layer release in cmos circuit, further improves the compatibility with CMOS technology.The MEMS structure can be withWith forming MEMS component, such as ultrasonic fingerprint sensor together with cmos circuit, fingerprint sensor working frequency can be improvedStability and dependability.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described the present invention.In various figures, identical element is using similar attachedIcon is remembered to represent.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to it is not shown certainWell known part.
Many specific details of the present invention, such as the structure of device, material, size, processing work is described hereinafterSkill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not pressThe present invention is realized according to these specific details.
In the following description, term " MEMS component " represents that cmos circuit and MEMS structure integrate the group to be formedPart.In an example, MEMS component is, for example, the ultrasonic sensor for including cmos circuit and ultrasonic transducer.However,The embodiment of the present invention is not limited to MEMS component and is the situation of ultrasonic sensor, but may adapt to any including cavityMEMS structure and its MEMS component to be formed is integrated with cmos circuit.
The present invention can be presented in a variety of manners, some of them example explained below.
The bottom view of confining bed and MEMS groups in MEMS component according to embodiments of the present invention is shown respectively in Fig. 1 a to 1cThe sectional view of the different location of part.The confining bed 125 in MEMS component is shown in fig 1 a, which is from substrate to envelopeClose the view of layer observation.
As shown in Figure 1a, in MEMS component 100, confining bed 125 is used for closed cavity.In fig 1 a by confining bed 125It is separately shown.However, it is to be appreciated that in final MEMS component 100, confining bed 125 is only a part for totalAnd above cavity.
Confining bed 125 includes extending to the multiple protruding portion 125a in release aperture, as embolism, for closing release aperture.The position of the multiple protruding portion 125a is corresponding with release aperture, that is, is separated from each other and is distributed in the periphery of cavity.In fig 1 aLine AA and BB the different interception positions of subsequent sectional view are shown, wherein, line AA is without protruding portion 125a, and line BB is then by prominentGo out portion 125a.
Fig. 1 b and 1c be shown respectively along the sectional view of AA and line BB.As shown in the figure, MEMS component 100 includes what is stackedCmos circuit 110 and MEMS structure 120.
The cmos circuit 110 includes the multiple transistors being formed at least partially in P type substrate 101 and describedThe multiple wiring layers and multiple interlayer dielectric layers stacked gradually above multiple transistors.As an example, it is shown in Fig. 1 b and 1cOnly one P-type transistor and only one N-type transistor, the first interlayer dielectric layer 106, the first wiring layer 107 and the second layerBetween dielectric layer 108.N-type well region 102 is formed in P type substrate 101.Then, P-type transistor is formed in N-type well region 102Source/drain region 103.The source/drain region 104 of N-type transistor is formed in P type substrate 101.In P type substrate 101 and N-type well region 102Form the gate-dielectric 111 stacked gradually and grid conductor 105.In P-type transistor, grid conductor 105 and N-type well regionIt is separated between 102 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region so that N-type well region102 are located at a part for 105 lower section of grid conductor as channel region.In N-type transistor, grid conductor 105 and P type substrateIt is separated between 101 by gate-dielectric 111, grid conductor 105 is laterally extended between adjacent source/drain region so that P type substrate101 are located at a part for 105 lower section of grid conductor as channel region.The source/drain region 103 of P-type transistor and N-type transistorSource/drain region 104 and grid conductor 105 can be electrically connected via conductive channel with the first wiring layer 107.
The MEMS structure 120 includes the template layer 121 positioned at 108 top of the second interlayer dielectric layer of cmos circuit 110, stopsOnly layer 122, mask layer 124 and confining bed 125.Template layer 121 is located on the second interlayer dielectric layer 108 and including the first groove131, the stop-layer 122 conformally covers the template layer 121, so as to form cavity 133 in first groove 131.The first groove 131 in template layer 121 is used to limit the positions and dimensions of cavity, so as to accurately control the transverse direction of cavitySize and longitudinal size.Mask layer 124 includes release aperture 132, which is used to carry in the forming process of cavity 133For etchant into channel and the passing away of etch products.The cross sectional shape of release aperture 132 is selected from round, ovalAny one of shape, triangle, rectangle, unfilled corner rectangle, pentagon.In a preferred embodiment, the lateral dimension of release aperture 132Substantially 0.1 micron to 5 microns.124 common surrounding cavity 133 of the stop-layer 122 and mask layer.
Confining bed 125 is located on cavity 133, including multiple protruding portion 125a, for closing release aperture 132.It is the multipleThe position of protruding portion 125a is corresponding with the position of release aperture 132, that is, is separated from each other and is distributed in the periphery of cavity.The distribution sideFormula can keep the integrality and mechanical strength of mask layer 124 above cavity so that mask layer 124 can support confining bed125.The protruding portion 125a extends above mask layer 124, across release aperture 132, and reaches the pre- of 124 lower section of mask layerDepthkeeping degree.
Template layer 121 includes multiple second groove 121a, is respectively used to accommodate the lower part of the multiple protruding portion 125a.TheThe cross sectional shape of two groove 121a is selected from any one of circle, ellipse, triangle, rectangle, unfilled corner rectangle, pentagon.The second groove 121a includes the be open with release aperture 132 corresponding first and connected with cavity 133 second opening.Such asSecond opening is to remove the opening that a part of side wall of first groove 131 is formed.The multiple protruding portion 125a is wornIt crosses release aperture 132 and is inserted into the second groove 121a, so as to form embolism, to close release aperture 132.
In the above-described embodiment, MEMS component 100 includes the cmos circuit 110 stacked gradually and MEMS structure 120,Cavity 133 is formed in MEMS structure 120.Cavity is formed using template layer 121 and stop-layer 122, can not only reduce cavity shapeInto difficulty, and can more accurately limit the size of cavity.Using confining bed 125 protruding portion be inserted into release aperture andIt extends in the second groove of template layer 121, so as to form embolism, to improve sealing effect and improve mechanical strength, so as to changeKind job stability and reliability compatible and that improve MEMS structure with CMOS technology.
In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor, and MEMS structure 120 can also includeMore layers.For example, above confining bed 125, the laminated piezoelectric of ultrasonic transducer can also be further formed.In the structureIn, confining bed 125 provides mechanical support for laminated piezoelectric.
The laminated piezoelectric of the ultrasonic transducer includes the Seed Layer stacked gradually, first electrode, piezoelectric layer and the second electricityPole.In an alternative embodiment, if forming Seed Layer, the release in Seed Layer closing mask layer 124 may be usedHole 132, so as to save the confining bed independently formed.Further, MEMS component 100 is further included for by 110 He of cmos circuitThe first contact and the second contact that MEMS structure 120 is electrically connected to each other.First contact is connected to via the through-hole across piezoelectric layerFirst electrode below piezoelectric layer, second connects to second electrode.First contact and the second contact are via from piezoelectricityThe through-hole that layer reaches the first wiring layer is connected to the first wiring layer.Therefore, the opposite table of the piezoelectric layer in ultrasonic transducer twoFirst electrode and second electrode on face are utilized respectively the first contact and second and connect to below ultrasonic transducerCmos circuit.
In the above-described embodiment, MEMS structure 120 is formed in the top of cmos circuit 110.In the implementation of a replacementIn example, thin film transistor (TFT) (TFT) circuit may be used and substitute cmos circuit.TFT circuit is for example including glass substrate and thereonThe multiple TFT formed.Multiple TFT in TFT circuit can be used as switch, be connected respectively with the pixel unit in CMOS structureIt connects, sensing signal is obtained to pixel unit or selectively from pixel unit so as to selectively provide drive signal.AnotherIn one alternative embodiment, dielectric substrate may be used and substitute cmos circuit.In this embodiment, dielectric substrate is tied for MEMSStructure provides support, and MEMS component mainly realizes the relevant function of MEMS structure, and using external circuit provide drive signal andSignal processing function.
Fig. 2 a and 2b to 9a and 9b shows cutting for the manufacturing method different phase of MEMS component according to embodiments of the present inventionFace figure, wherein, Fig. 2 a to 9a are the sectional view intercepted along Fig. 1 a center lines AA respectively, and Fig. 2 b to 9b are cut along Fig. 1 a center lines BB respectivelyThe sectional view taken.
Template layer 121 is formed on cmos circuit 110, as shown in figures 2 a and 2b.It is used to form the technique of cmos circuit 110It is known, this will not be detailed here.
The cmos circuit is for example including multiple transistors for being formed at least partially in P type substrate 101 and describedThe first interlayer dielectric layer 106, the first wiring layer 107 and the second interlayer dielectric layer 108 stacked gradually above multiple transistors.MakeFor example, only one P-type transistor and only one N-type transistor are shown in Fig. 3 a.N-type is formed in P type substrate 101Well region 102.Then, the source/drain region 103 of P-type transistor is formed in N-type well region 102.It is brilliant that N-type is formed in P type substrate 101The source/drain region 104 of body pipe.The gate-dielectric 111 and grid stacked gradually is formed in P type substrate 101 and N-type well region 102Conductor 105.In P-type transistor, separated between grid conductor 105 and N-type well region 102 by gate-dielectric 111, grid conductor105 are laterally extended between adjacent source/drain region so that N-type well region 102 is located at a part of conduct of 105 lower section of grid conductorChannel region.In N-type transistor, separated between grid conductor 105 and P type substrate 101 by gate-dielectric 111, grid conductor105 are laterally extended between adjacent source/drain region so that P type substrate 101 is located at a part of conduct of 105 lower section of grid conductorChannel region.The source/drain region 103 of P-type transistor and the source/drain region 104 of N-type transistor and grid conductor 105 can be via leadingElectric channel is electrically connected with the first wiring layer 107.
In alternate embodiments, the transistor in cmos circuit 110 is not limited to two, but can include at least oneTransistor, the interlayer dielectric layer in cmos circuit 110 can include at least one interlayer dielectric layer not only in two,Wiring layer in cmos circuit 110 is not limited to one, but can include at least one wiring layer.
Template layer 121 is for example formed by being selected from non-crystalline silicon, silica and any material of silicon nitride, for example, by using wait fromDaughter enhancing chemical vapor deposition (PE-CVD) is formed.E.g., about 0.2 micron to 5 microns of the thickness of template layer 121.
Using including gluing, exposed and developed photoetching process, photoresist mask is formed.It is lost via photoresist maskIt carves, template layer 121 is patterned, so as to form the first groove 131 and the second groove 121a in template layer 121.The etching exampleSuch as can be the dry method etch technology for using the wet etching process of etching solution or carrying out in the reactor chamber, such as etc.Plasma.After the etching, by dissolving or being ashed removal photoresist mask in a solvent.
The first groove 131 formed in template layer 121 is used to limit the positions and dimensions of finally formed cavity.UpperIn the patterning step stated, the pattern of photoresist mask limits position and the lateral dimension of cavity, and etch depth limits cavityDepth.In one embodiment, desired etch depth can be obtained by controlling etching period.In preferred embodimentIn, the first groove 131 penetrates template layer 121.If the second interlayer dielectric layer 108 of template layer 121 and cmos circuit 110 usesThen in the step of etching, the second interlayer dielectric layer 108 may be used as stop-layer, etch depth in different material compositionsIt is consistent with the thickness of template layer 121.Therefore, desired etch depth can be obtained by the thickness of Control architecture layer 121.
The multiple second groove 121a surrounding cavities formed in template layer 121.Second groove 121a is used for subsequentEtched channels are provided in etch process and for accommodating the protruding portion of confining bed subsequently formed.For this purpose, second groove121a includes and the first opening exposed on 121 surface of template layer and the second opening connected with cavity 133.For example, secondOpening is a part of side wall for removing first groove 131 and the opening formed.In above-mentioned patterning step, photoresistThe pattern of mask limits position and the lateral dimension of the second groove 121a, and etch depth limits the depth of the second groove 121a.
Then, such as by deposition, conformal stop-layer is formed on the second interlayer dielectric layer 108 and template layer 121122, as best shown in figures 3 a and 3b.Stop-layer 122 is made of corrosion resistant material, such as by being selected from the metal material of tantalum or gold or selected from nitrogenChange the nonmetallic materials composition of aluminium, aluminium oxide and non-crystalline silicon.The thickness of stop-layer 122 is, for example, 0.1 micron to 1 micron.
The stop-layer 122 is consistent with the surface shape of template layer 121.Therefore, after stop-layer 122 is formed, the stoppingLayer 122 is located in the bottom and side wall of the first groove 131, so as to form with the first groove 131 opening unanimously in stop-layer 122Mouthful.Further, which is also located in the bottom and side wall of the second groove 121a, so as to be formed in stop-layer 122The opening consistent with the second groove 121a.
Then, such as by deposition, formation sacrificial layer 123, as shown in Figs. 4a and 4b on stop-layer 122.Sacrificial layer 123Such as be made of silica, for example, by using plasma enhanced chemical vapor deposition (PE-CVD) formation.The thickness of sacrificial layer 123For example, 1 micron to 6 microns, so as to fill the first groove 131 and the second groove 121a that are formed in stop-layer 122.
Then, using a part for the smooth removal sacrificial layer 123 of chemical-mechanical planarization (CMP) so that only sacrificial layer123 parts for being located inside the first groove 131 and the second groove 121a retain, and obtain smooth body structure surface, such as Fig. 5 aShown in 5b.
Then, such as by deposition, mask layer 124 is formed on stop-layer 122 and sacrificial layer 123, such as Fig. 6 a and 6b institutesShow.Mask layer 124 is made of corrosion resistant material, such as by being selected from the metal material of tantalum or gold or selected from aluminium nitride, aluminium oxide and non-The nonmetallic materials composition of crystal silicon.The thickness of mask layer 124 is, for example, 0.2 micron to 2 microns.
Then, using above-mentioned photoetching process and etch process, mask layer 124 is patterned to comprising multiple release apertures132 mask pattern, as illustrated in figs. 7 a and 7b.Substantially 0.1 micron to 5 microns of the lateral dimension of release aperture 132.The release aperture132 using as etchant into channel and the passing away of etch products.The multiple release apertures formed in mask layer 124132 surrounding cavities, it is corresponding with the position of the multiple second groove 121a.That is, the multiple release aperture 132 with it is the multipleThe first opening of second groove 121a is in alignment with each other.
Then, sacrificial layer 123 is further etched via the release aperture 132 of mask layer 124, as shown in figs. 8 a and 8b.As aboveDescribed, multiple release apertures 132 in mask layer 124 are corresponding with the position of multiple second groove 121a in template layer 121.CauseThis, in the etching step, etchant etches the portion that sacrificial layer 123 is located in the second groove 121a successively via release aperture 132Point so that the first of the second groove 121a is open and the second open communication, and then it is recessed to be located at first for further etching sacrificial layer 123Part in slot 131.Utilizing the selectivity of etchant so that the surface for being etched in mask layer 124 and stop-layer 122 stops, fromAnd sacrificial layer 123 can be removed, cavity 133 is formed in stop-layer 122.Release aperture 132 communicates with each other with cavity 133.
Preferably, it is formed using different etch process patterned mask layers 124 and in the second interlayer dielectric layer 108Cavity 133.For example, gas phase etching work is used when forming cavity 133 using wet etching process in patterned mask layer 124Skill.Preferably, sacrificial layer 123 is made of silica, and stop-layer 122 and mask layer 124 are made of non-crystalline silicon, then is forming cavityThe etchant used when 133 is gas HF.
Chemical reaction in the gas phase etching is：SiO2+ 4HF=SiF4+2H2O.Etch products are SiF4And water, the two are equalFor gaseous state, easily discharged from cavity.
Even if release aperture 132 is small-sized, etchant can also reach sacrificial layer 123, etching production via release aperture 132Object can also be discharged via release aperture 132.Therefore, the size of release aperture 132 there is no is limited by etch process.ByIn isotropic etching characteristic, large-sized cavity 133 can be formed via release aperture 132.
Further, since multiple release apertures 132 are distributed in the periphery of cavity 133, and be separated from each other.The distribution modeThe integrality and mechanical strength of mask layer 124 can be kept above cavity so that mask layer 124 can support what is subsequently formedConfining bed 125.
Then, such as by deposition, confining bed 125 is formed on mask layer 124, as illustrated in figures 9 a and 9b.Confining bed 125Such as it is made of a kind of in aluminium nitride, silica and silicon nitride.Preferably, confining bed 125 is made of aluminium nitride, such asIt is formed using physical vapour deposition (PVD) (PVD).Confining bed 125 is located at 124 top of mask layer, fills the release aperture in mask layer 124132 so that cavity 133 is also closing.
If forming confining bed 125 under vacuum conditions, the cavity 133 formed is vacuum cavity.The cavity 133 it is interiorWall liner has stop-layer 122 and mask layer 124, and the release gas so as to prevent interlayer dielectric layer enters in cavity.
In a kind of alternative embodiment, if there is Seed Layer, then Seed Layer can be used as insulating layer.It is replaced at anotherIn the embodiment in generation, additional sealant may be used instead of the closing opening of confining bed 125.The sealant can be by any materialsComposition, such as non-crystalline silicon or metal.
Preferably, the size of release aperture 132 is selected according to the deposition characteristics of confining bed 125 so that confining bed 125 is dischargingThe top in hole 132 can be extended continuously.In this embodiment, the diameter of release aperture 132 is about 0.1 micron to 5 microns.Confining bed125 are located on cavity 133, including multiple protruding portion 125a.The protruding portion 125a extends above mask layer 124, across releasingDischarge hole 132, and the predetermined depth of 124 lower section of mask layer is reached, so as to be inserted into the second groove 121a of the template layer 121In, so as to form embolism, to close release aperture 132.
In the method for the embodiment, it is inserted into release aperture 132 using the protruding portion of confining bed 125 and extends to template layerIn 121 the second groove 121a, so as to form embolism, with improve sealing effect and improve mechanical strength, so as to improve with CMOSThe compatibility of technique and the job stability and reliability for improving MEMS structure.
In a preferred embodiment, MEMS component 100 is, for example, ultrasonic sensor.This method can be further formed moreMore layers.For example, above confining bed 125, the laminated piezoelectric of ultrasonic transducer can also be further formed.In the structureIn, confining bed 125 provides mechanical support for laminated piezoelectric.The laminated piezoelectric of the ultrasonic transducer includes the seed stacked graduallyLayer, first electrode, piezoelectric layer and second electrode.The piezoelectric layer is by being selected from aluminium nitride, segregation vinyl fluoride, segregation vinyl fluoride-trifluoroAny one composition in ethylene, lead titanate piezoelectric ceramics, lithium niobate piezoelectric ceramics.First electrode and second electrode are by arbitraryConductor material forms, for example, the metal selected from one of Au, Ag and Al.
In terms of the manufacturing, the manufacturing method of the MEMS component is compatible with CMOS technology, can be direct in CMOS fabrication lineProcessing.In terms of the subsequent applications of MEMS component, such as when MEMS component is as ultrasonic fingerprint sensor, in subsequent movementThe application field of terminal can penetrate the media such as glass and directly apply, reduce subsequent answer without the trepanning on the media such as glassUse cost.In terms of terminal applies, compared with capacitive fingerprint sensing device, the ultrasonic signal of ultrasonic fingerprint sensor is by oilThe influence such as dirt, sweat is small, is influenced small, the high accuracy for examination of identification with humidity by temperature.
It should be noted that herein, relational terms such as first and second and the like are used merely to a realityBody or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operationIn any this practical relationship or sequence.Moreover, term " comprising ", "comprising" or its any other variant are intended toNon-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including thoseElement, but also including other elements that are not explicitly listed or further include as this process, method, article or equipmentIntrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded thatAlso there are other identical elements in process, method, article or equipment including the element.
According to the embodiment of the present invention as described above, these embodiments are there is no all details of detailed descriptionthe, also notIt is only the specific embodiment to limit the invention.Obviously, as described above, can make many modifications and variations.This explanationBook is chosen and specifically describes these embodiments, is in order to preferably explain the principle of the present invention and practical application, belonging to makingTechnical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by rightThe limitation of claim and its four corner and equivalent.