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CN108111121A - A kind of photovoltaic bypass diode - Google Patents

A kind of photovoltaic bypass diode
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Publication number
CN108111121A
CN108111121ACN201711336177.9ACN201711336177ACN108111121ACN 108111121 ACN108111121 ACN 108111121ACN 201711336177 ACN201711336177 ACN 201711336177ACN 108111121 ACN108111121 ACN 108111121A
Authority
CN
China
Prior art keywords
comparator
mos pipe
power mos
output terminal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711336177.9A
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Chinese (zh)
Inventor
黄小锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Xinghai Electronic Ltd By Share Ltd
Original Assignee
Changzhou Xinghai Electronic Ltd By Share Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Xinghai Electronic Ltd By Share LtdfiledCriticalChangzhou Xinghai Electronic Ltd By Share Ltd
Priority to CN201711336177.9ApriorityCriticalpatent/CN108111121A/en
Publication of CN108111121ApublicationCriticalpatent/CN108111121A/en
Pendinglegal-statusCriticalCurrent

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Abstract

The present invention relates to a kind of photovoltaic bypass diodes, the output terminal of first comparator and an input terminal of door connect, the output terminal of second comparator and another input terminal of door connect, it is connected with the output terminal of door and the input terminal of buffer, the output terminal of buffer is connected with the grid of the first power MOS pipe, and parasitic diode is connected between the drain electrode of the first power MOS pipe and source electrode;The drain electrode of first power MOS pipe is connected with the inverting input of the second comparator, the output terminal of oscillator and the input terminal of charge pump connect, the output terminal of charge pump and capacitance C, first comparator in-phase input end and connect, the source electrode of second power MOS pipe and oscillator, charge pump simultaneously connect, the grid of the second power MOS pipe be sequentially connected oscillator, charge pump, capacitance C, first comparator, be connected with the source electrode of door, the second comparator, buffer, the first power MOS pipe after form the anode of photovoltaic bypass diode.The conduction voltage drop of this photovoltaic bypass diode is low, and reverse leakage current is smaller.

Description

A kind of photovoltaic bypass diode
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of photovoltaic bypass diode.
Background technology
The bypass diode high current from common PN junction diode (first generation use product) till now at presentSchottky photovoltaic bypass diode (second generation uses product).The first generation uses common two pole of PN junction that product usesPipe conduction voltage drop is high, electric current by when forward direction power consumption it is big, generate higher temperature, cause terminal box temperature distortion, diode fromThe a series of security risk such as body thermal failure, metallic circuit connector oxidation.In monocrystalline silicon, polysilicon big-power solar componentIt is upper to use the index request that reach solar energy standard;Be only used for noncrystal membrane electrification component at present, and progressively byGPP types photovoltaic diode substitutes.
The content of the invention
For above-mentioned technical problem, the object of the present invention is to provide a kind of photovoltaic bypass diodes rational in infrastructure.
Realize that technical scheme is as follows:
A kind of photovoltaic bypass diode, including first comparator, the second comparator and door, buffer, the first power MOSPipe, the second power MOS pipe, oscillator, capacitance C,
The output terminal of the first comparator is connected with the input terminal with door, the output terminal of the second comparator with doorAnother input terminal connection, is connected, the output terminal of buffer and the first power MOS pipe with the output terminal of door and the input terminal of bufferGrid connection, be connected with parasitic diode between the drain electrode of the first power MOS pipe and source electrode;The drain electrode of first power MOS pipeIt is connected with the inverting input of the second comparator,
And for capacitance C chargings and the charge pump of pressure drop on parasitic diode is improved, output terminal and the electricity of the oscillatorThe input terminal connection of lotus pump, the output terminal of charge pump and capacitance C, first comparator in-phase input end and connect,
The source electrode of second power MOS pipe and oscillator, charge pump simultaneously connect, and the drain electrode of the second power MOS pipe is photovoltaic bypassThe cathode of diode,
The grid of second power MOS pipe is sequentially connected the power input of oscillator, the power input of charge pump, capacitanceC one end, first comparator power input, with the power input of door, the power input of the second comparator, bufferPower input, the source electrode of the first power MOS pipe form the anode of photovoltaic bypass diode after connecting.
The in-phase input end of the first comparator is connected with by resistance R1, resistance R2 and connects the resitstance voltage divider formed,Between the in-phase input end connection of first comparator and resistance R1, resistance R2, the output terminal of the resistance R1 other ends and charge pump connectsIt connects.
Using above-mentioned technical solution, match somebody with somebody by using charge pump, two comparators, with door, two power MOS pipesIt closes, the conduction voltage drop for making photovoltaic bypass diode is low, and reverse leakage current is smaller.
Description of the drawings
Fig. 1 is the circuit block diagram of the present invention;
Schematic diagram when Fig. 2 a are off position of the present invention;
Schematic diagram when Fig. 2 b are working condition of the present invention;
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present inventionAttached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hairBright part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skillPersonnel's all other embodiments obtained on the premise of without creative work, belong to the scope of protection of the invention.
As shown in Figure 1, a kind of photovoltaic bypass diode, including first comparator 1, the second comparator 2 and door 3, buffer4th, the first power MOS pipe 5, the second power MOS pipe 6, oscillator 7, capacitance C, the output terminal of first comparator with it is the one of door defeatedEnter end connection, the output terminal of the second comparator is connected with another input terminal with door, the input with the output terminal and buffer of doorEnd connection, the output terminal of buffer is connected with the grid of the first power MOS pipe, between the drain electrode of the first power MOS pipe and source electrodeIt is connected with parasitic diode 8;The drain electrode of first power MOS pipe is connected with the inverting input of the second comparator and is capacitance CIt charges and improves the charge pump 9 of pressure drop on parasitic diode, the output terminal of oscillator and the input terminal of charge pump connect, charge pumpOutput terminal and capacitance C, first comparator in-phase input end and connect, source electrode and oscillator, the charge pump of the second power MOS pipeAnd connect, the drain electrode of the second power MOS pipe is the cathode of photovoltaic bypass diode.
The grid of second power MOS pipe successively and connects the power input of oscillator, the power input of charge pump, capacitanceC one end, first comparator power input, with the power input of door, the power input of the second comparator, bufferPower input, the source electrode of the first power MOS pipe form the anode of photovoltaic bypass diode after connecting.The same phase of first comparatorInput terminal is connected with by resistance R1, resistance R2 and connects the resitstance voltage divider formed, the connection of the in-phase input end of first comparator withBetween resistance R1, resistance R2, the output terminal connection of the resistance R1 other ends and charge pump.
This photovoltaic bypass diode structure is as shown in Fig. 1 block diagrams.First power MOS pipe M1 is main switch element, parasiticDiode D short circuits undertake important function between the source electrode of the first power MOS pipe M1 and drain electrode when circuit works.
Boosting part, it (is charged to VDD including charge pump to capacitor C;VDD is supply voltage, is supplied to other partsElectricity, while improve the pressure drop on parasitic diode D) and oscillator (having source crystal oscillator).The effect of second power MOS pipe M2 is protectionOscillator, the oscillator are usually realized with active low voltage transistor.For this purpose, two pole of parasitic intrinsic of the first power MOS pipe M1The conduction threshold (usually in 300-400mV or so) of pipe must be bigger than the second power MOS pipe M2.
First comparator Comp1 monitors two threshold voltage VDD;Second comparator Comp2 and the first power MOS pipe M1 phasesEven, change in polarity is monitored.
Buffer provides driving voltage to the grid of the first power MOS pipe M1.It is needed in common DC/DC boost convertersInductance, in this product, we eliminate inductance, employ simpler standard IC integrated technologies.In addition, first comparatorThe switch of Comp1 control circuits, and first comparator Compl can accurately set threshold voltage (passing through resitstance voltage divider), andIt can be adjusted according to the minimum conduction threshold of the first power MOS pipe M1.
During work, when solar panel works normally, the voltage between the drain electrode of the first power MOS pipe M1 and source electrodeFor just, the first power MOS pipe M1 keeps cut-off state, at this moment assistant drive system does not also work.Such case is as shown in Figure 2 a.
If connected to the solar panel of power MOS pipe is a part of shielded, then the leakage of the first power MOS pipe M1Voltage reversal between pole and source electrode, signal become negative, because the electric current that generates of not shielded solar panel is from parasitic two polesThe cathode of pipe D flows to anode.Once the second power MOS pipe M2 is turned on, the voltage drop on parasitic diode D can be by charge pump profitWith such case annotates voltage value as shown in Fig. 2 .b, in left side, and the electric current from other solar panels flows through parasitic diodeD。
After several cycle oscillators, capacitor C is charged to voltage VDD needed for buffer, with enough drivesDynamic voltage turns on M1, to minimize drain source resistance --- Rds, on.As shown in Fig. 2 .b, right side annotates such caseVoltage value.In this case, most of electric current is flowed through from the first power MOS pipe M1.
Certainly, due to inevitable current loss, the charge on capacitance C must periodically recover.Entire driving systemSystem can be designed to make the charging time needed for capacitance C than the first power MOS pipe M1 ON time much less (such as<10%).In fact, when the voltage on capacitance C increases to certain threshold value (for example, could be provided as 5V), pass through detection theOne comparator Comp1, can turn on M1.In turn, (can be when the voltage at capacitance C both ends is reduced to relatively low threshold value4.5V), the first power MOS pipe M1 ends, to recover the charge of capacitor C.When shade is removed, the second comparatorComp2 detects reversed polarity condition, and making the first power MOS pipe M1 cut-offs, (the second power MOS pipe M2 is also ended and chargeIt pumps disabled).The logical produc of the signal from first comparator Comp1 and the second comparator Comp2 is performed with door so that onlyAt least one comparator output is wanted for 0 first power MOS pipe M1 can just to end.

Claims (2)

CN201711336177.9A2017-12-142017-12-14A kind of photovoltaic bypass diodePendingCN108111121A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN201711336177.9ACN108111121A (en)2017-12-142017-12-14A kind of photovoltaic bypass diode

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN201711336177.9ACN108111121A (en)2017-12-142017-12-14A kind of photovoltaic bypass diode

Publications (1)

Publication NumberPublication Date
CN108111121Atrue CN108111121A (en)2018-06-01

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CN201711336177.9APendingCN108111121A (en)2017-12-142017-12-14A kind of photovoltaic bypass diode

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CN (1)CN108111121A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN110289640A (en)*2019-08-132019-09-27无锡硅动力微电子股份有限公司Intelligent photovoltaic switching off device
CN111293678A (en)*2018-12-072020-06-16浙江英达威芯电子有限公司Photovoltaic module and control method thereof
CN115967346A (en)*2023-01-132023-04-14北京风雷寰宇空调设备有限公司Detachable junction box of solar cell module and circuit thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20080198523A1 (en)*2005-05-242008-08-21Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.Circuit Breaker for a Solar Module
CN102386911A (en)*2010-06-152012-03-21松下电器产业株式会社Diode circuit
CN102916056A (en)*2012-09-252013-02-06谢可勋Solar battery pack protection circuit, solar junction box and solar power generation system
CN202840924U (en)*2012-09-242013-03-27重庆西南集成电路设计有限责任公司Novel rectifier diode replacement circuit
CN206517288U (en)*2017-02-072017-09-22苏州锴威特半导体有限公司It is a kind of to reduce the device of solar energy bypass switching circuit power consumption
CN207720085U (en)*2017-12-142018-08-10常州星海电子股份有限公司A kind of photovoltaic bypass diode

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US20080198523A1 (en)*2005-05-242008-08-21Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.Circuit Breaker for a Solar Module
CN102386911A (en)*2010-06-152012-03-21松下电器产业株式会社Diode circuit
CN202840924U (en)*2012-09-242013-03-27重庆西南集成电路设计有限责任公司Novel rectifier diode replacement circuit
CN102916056A (en)*2012-09-252013-02-06谢可勋Solar battery pack protection circuit, solar junction box and solar power generation system
CN206517288U (en)*2017-02-072017-09-22苏州锴威特半导体有限公司It is a kind of to reduce the device of solar energy bypass switching circuit power consumption
CN207720085U (en)*2017-12-142018-08-10常州星海电子股份有限公司A kind of photovoltaic bypass diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN111293678A (en)*2018-12-072020-06-16浙江英达威芯电子有限公司Photovoltaic module and control method thereof
CN110289640A (en)*2019-08-132019-09-27无锡硅动力微电子股份有限公司Intelligent photovoltaic switching off device
CN110289640B (en)*2019-08-132024-05-28无锡硅动力微电子股份有限公司Intelligent photovoltaic shutoff device
CN115967346A (en)*2023-01-132023-04-14北京风雷寰宇空调设备有限公司Detachable junction box of solar cell module and circuit thereof
CN115967346B (en)*2023-01-132024-04-09合肥仙湖半导体科技有限公司Solar cell module detachable junction box and circuit thereof

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Application publication date:20180601


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