技术领域technical field
本发明涉及一种碳纳米管水平阵列及其制备方法，具体涉及一种(n，n-1)型碳纳米管水平阵列及其制备方法。The invention relates to a carbon nanotube horizontal array and a preparation method thereof, in particular to a (n, n-1) type carbon nanotube horizontal array and a preparation method thereof.
背景技术Background technique
碳纳米管，尤其是半导体型碳纳米管，由于其具有直接带隙，且在场效应晶体管中，可以获得更小的沟道尺寸，因此被认为能未来能够取代硅基半导体的材料之一。但是目前直接生长的碳纳米管不能够有效的获得百分百纯度的半导体型碳纳米管，因此使得碳纳米管在纳电子学中的应用变得寸步难行。目前一些去除金属型碳纳米管的方法主要是刻蚀和电流烧蚀。前者目前获得纯度仍然不够，仅有不到96％的选择性，后者的选择性足够高，但是对于碳纳米管的密度要求很高，不能处理密度过高的样品，而且二者处理后的样品，密度均有大幅度下降。因此发展一种直接生长获得高纯度半导体型碳纳米管水平阵列的方法是很有必要的。Carbon nanotubes, especially semiconducting carbon nanotubes, are considered to be one of the materials that can replace silicon-based semiconductors in the future because they have a direct band gap and can obtain smaller channel sizes in field effect transistors. However, the current direct growth of carbon nanotubes cannot effectively obtain 100% pure semiconducting carbon nanotubes, which makes the application of carbon nanotubes in nanoelectronics difficult. At present, some methods for removing metal-type carbon nanotubes are mainly etching and current ablation. The purity of the former is still not enough, with a selectivity of less than 96%. The selectivity of the latter is high enough, but the density of carbon nanotubes is very high, and samples with too high density cannot be processed. The density of samples decreased significantly. Therefore, it is necessary to develop a method for directly growing horizontal arrays of high-purity semiconducting carbon nanotubes.
发明内容Contents of the invention
本发明的目的是提供一种(n，n-1)型碳纳米管水平阵列及其制备方法，本发明提供的半导体型碳纳米管的纯度较高。The object of the present invention is to provide a horizontal array of (n, n-1) type carbon nanotubes and a preparation method thereof, and the purity of the semiconductor type carbon nanotubes provided by the present invention is relatively high.
本发明所提供的(n，n-1)型碳纳米管水平阵列的制备方法，包括如下步骤：The preparation method of the (n, n-1) type carbon nanotube horizontal array provided by the present invention comprises the following steps:
1)将氢氧化铁、氢氧化钴或氢氧化镍转移至基底上；1) transferring iron hydroxide, cobalt hydroxide or nickel hydroxide to the substrate;
2)采用氢气对所述氢氧化铁、氢氧化钴或氢氧化镍进行还原；2) using hydrogen to reduce the iron hydroxide, cobalt hydroxide or nickel hydroxide;
3)所述还原步骤结束后，继续通入所述氢气并引入碳源气进行生长，即得所述(n，n-1)型碳纳米管水平阵列。3) After the reduction step is completed, continue to feed the hydrogen gas and carbon source gas to grow, and obtain the (n, n-1) type carbon nanotube horizontal array.
本发明(n，n-1)型碳纳米管水平阵列中，n为10～22之间的自然数。In the (n, n-1) type carbon nanotube horizontal array of the present invention, n is a natural number between 10 and 22.
上述的制备方法中，步骤1)中，转移所述氢氧化铁、所述氢氧化钴或所述氢氧化镍的方式为：In the above-mentioned preparation method, in step 1), the mode of transferring the iron hydroxide, the cobalt hydroxide or the nickel hydroxide is:
将氢氧化铁胶体的醇溶液、氢氧化钴胶体的醇溶液或氢氧化镍胶体的醇溶液旋涂于所述基底上，具体可采用各胶体的乙醇溶液；Spin-coating an alcoholic solution of iron hydroxide colloid, an alcoholic solution of cobalt hydroxide colloid or an alcoholic solution of nickel hydroxide colloid on the substrate, specifically ethanol solutions of each colloid can be used;
所述氢氧化铁胶体的醇溶液、所述氢氧化钴胶体的醇溶液或所述氢氧化镍胶体的醇溶液的摩尔浓度可为0.01～0.1mM，具体可为0.05mM；The molar concentration of the alcohol solution of the iron hydroxide colloid, the alcohol solution of the cobalt hydroxide colloid or the alcohol solution of the nickel hydroxide colloid may be 0.01-0.1mM, specifically 0.05mM;
所述旋涂的速率可为2200～2700r/min，具体可为2500r/min。The speed of the spin coating may be 2200˜2700 r/min, specifically 2500 r/min.
上述的制备方法中，步骤1)中，所述基底可为单晶基底，如采用单晶st-cut石英基底。In the above preparation method, in step 1), the substrate may be a single crystal substrate, such as a single crystal st-cut quartz substrate.
上述的制备方法中，步骤2)中，所述还原的条件如下：In the above-mentioned preparation method, in step 2), the conditions for the reduction are as follows:
氢气的流速可为100～300sccm，具体可为150～200sccm、150sccm或200sccm；The flow rate of hydrogen can be 100-300 sccm, specifically 150-200 sccm, 150 sccm or 200 sccm;
温度可为700～900℃，具体可为700～880℃、700～850℃、700℃、850℃、880℃或900℃；The temperature can be 700-900°C, specifically 700-880°C, 700-850°C, 700°C, 850°C, 880°C or 900°C;
时间可为10～20分钟，具体可为10分钟、15分钟或20分钟；The time can be 10-20 minutes, specifically 10 minutes, 15 minutes or 20 minutes;
通过所述还原步骤，将催化剂前驱体还原为铁、钴和镍，即为生长碳纳米管水平阵列的催化剂。Through the reduction step, the catalyst precursor is reduced to iron, cobalt and nickel, which are catalysts for growing carbon nanotube horizontal arrays.
上述的制备方法中，步骤3)中，所述碳源气可为甲烷、乙烯或乙醇蒸气；In the above preparation method, in step 3), the carbon source gas can be methane, ethylene or ethanol vapor;
所述碳源气的通入方式为下述1)或2)：The feeding mode of the carbon source gas is the following 1) or 2):
1)当所述碳源气为甲烷或乙烯时，采用直接引入的方式；1) When the carbon source gas is methane or ethylene, the method of direct introduction is adopted;
2)当所述碳源气为乙醇蒸气，采用由氩气引入的方式。2) When the carbon source gas is ethanol vapor, it is introduced by argon.
上述的制备方法中，步骤3)中，所述碳源气的通入速率可为10～30sccm，具体可为15～30sccm、15～25sccm、15sccm、20sccm、25sccm或30sccm；In the above preparation method, in step 3), the feed rate of the carbon source gas may be 10-30 sccm, specifically 15-30 sccm, 15-25 sccm, 15 sccm, 20 sccm, 25 sccm or 30 sccm;
所述氢气的通入速率可为300～400sccm，基体可为300sccm、350sccm或400sccm。The feed rate of the hydrogen gas may be 300-400 sccm, and the substrate may be 300 sccm, 350 sccm or 400 sccm.
上述的制备方法中，步骤3)中，所述生长的条件如下：In the above-mentioned preparation method, in step 3), the growth conditions are as follows:
温度可为700～950℃，具体可为700～880℃、700～850℃、700℃、850℃、880℃或900℃；The temperature can be 700-950°C, specifically 700-880°C, 700-850°C, 700°C, 850°C, 880°C or 900°C;
时间可为1～2h，具体可为1h或2h。The time may be 1-2 hours, specifically 1 hour or 2 hours.
本发明上述方法制备得到的(n，n-1)型碳纳米管水平阵列也属于本发明的保护范围。The (n, n-1) type carbon nanotube horizontal array prepared by the above method of the present invention also belongs to the protection scope of the present invention.
本发明提供的(n，n-1)型碳纳米管水平阵列的半导体选择性高达96％以上。The semiconductor selectivity of the (n, n-1) type carbon nanotube horizontal array provided by the invention is as high as 96%.
本发明提供的(n，n-1)型碳纳米管水平阵列的质量较高，具有稳定的双极性行为。The (n, n-1) type carbon nanotube horizontal array provided by the invention has high quality and stable bipolar behavior.
本发明提供的(n，n-1)型碳纳米管水平阵列，其中的碳纳米管的管径为1.1～2.7nm，长度为10～100μm。In the horizontal array of (n, n-1) carbon nanotubes provided by the present invention, the diameter of the carbon nanotubes is 1.1-2.7 nm and the length is 10-100 μm.
与现有技术相比，本发明具有如下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
1)本发明方法制备的半导体型碳纳米管的纯度很高，理论上(n，n-1)型碳纳米管均为半导体型，因此该方法潜在可以制备超高纯度的半导体型碳纳米管。1) The purity of the semiconducting carbon nanotubes prepared by the method of the present invention is very high, and the (n, n-1) type carbon nanotubes are all semiconducting in theory, so this method can potentially prepare ultrahigh-purity semiconducting carbon nanotubes .
2)本发明方法制备的半导体型碳纳米管的质量极高，器件性能测试表明该方法制备的碳纳米管具有稳定的双极性行为，而双极性是碳纳米管的本征性质。2) The quality of the semiconducting carbon nanotubes prepared by the method of the present invention is extremely high, and device performance tests show that the carbon nanotubes prepared by the method have stable bipolar behavior, and bipolarity is an intrinsic property of carbon nanotubes.
3)本发明制备方法中碳纳米管具有极慢的生长速率，该过程有利于碳纳米管缺陷的修复，拉曼光谱和电学性质测量表明获得的结构很完美。3) The carbon nanotubes in the preparation method of the present invention have an extremely slow growth rate, which is beneficial to the repair of carbon nanotube defects, and the Raman spectrum and electrical property measurements show that the obtained structure is perfect.
附图说明Description of drawings
图1为本发明实施例1制备的(n，n-1)型碳纳米管水平阵列的SEM图。FIG. 1 is a SEM image of a horizontal array of (n, n-1) carbon nanotubes prepared in Example 1 of the present invention.
图2为本发明实施例1制备的(n，n-1)型碳纳米管水平阵列的TEM图(内插图)及电子衍射。Fig. 2 is the TEM image (inset) and electron diffraction of the horizontal array of (n, n-1) carbon nanotubes prepared in Example 1 of the present invention.
图3为本发明实施例1制备的(n，n-1)型碳纳米管水平阵列中(13,12)管的典型光学吸收谱图。Fig. 3 is a typical optical absorption spectrum of (13, 12) tubes in the horizontal array of (n, n-1) carbon nanotubes prepared in Example 1 of the present invention.
图4为本发明实施例1制备的(n，n-1)型碳纳米管水平阵列的FET器件的电学性质表征。Fig. 4 is a characterization of the electrical properties of the (n, n-1) type carbon nanotube horizontal array FET device prepared in Example 1 of the present invention.
图5为本发明实施例1制备的(n，n-1)型碳纳米管水平阵列的单根碳纳米管拉曼光谱表征。Fig. 5 is a Raman spectrum characterization of a single carbon nanotube of the horizontal array of (n, n-1) carbon nanotubes prepared in Example 1 of the present invention.
图6为本发明实施例4制备的(10，9)型碳纳米管水平阵列的SEM图。Fig. 6 is an SEM image of a (10,9) type carbon nanotube horizontal array prepared in Example 4 of the present invention.
图7为本发明实施例4制备的(10，9)型碳纳米管水平阵列的拉曼光谱图7。FIG. 7 is a Raman spectrum diagram 7 of the horizontal array of (10,9) carbon nanotubes prepared in Example 4 of the present invention.
具体实施方式Detailed ways
下述实施例中所使用的实验方法如无特殊说明，均为常规方法。The experimental methods used in the following examples are conventional methods unless otherwise specified.
下述实施例中所用的材料、试剂等，如无特殊说明，均可从商业途径得到。The materials and reagents used in the following examples can be obtained from commercial sources unless otherwise specified.
实施例1、Fe催化剂制备(n，n-1)型碳纳米管水平阵列Embodiment 1, Fe catalyst preparation (n, n-1) type carbon nanotube horizontal array
在单晶st-cut石英表面，以2500r/min的速度旋涂0.05mM的Fe(OH)3胶体的乙醇溶液，然后将基底置于900℃的反应容器中，利用200sccm氢气还原20min，还原后，将氢气的流量改为400sccm，然后引入20sccm的乙醇蒸气(由氩气携带)，生长2h，然后关掉乙醇，关闭加热降温，获得(n，n-1)型半导体型碳纳米管水平阵列。On the single crystal st-cut quartz surface, spin-coat 0.05mM ethanol solution of Fe(OH)3 colloid at a speed of 2500r/min, then place the substrate in a reaction vessel at 900°C, and reduce it with 200sccm hydrogen for 20min, after reduction , change the flow rate of hydrogen to 400sccm, then introduce 20sccm of ethanol vapor (carried by argon), grow for 2h, then turn off the ethanol, turn off the heating and cooling, and obtain a horizontal array of (n, n-1) type semiconductor carbon nanotubes .
本实施例制备的(n，n-1)碳纳米管水平阵列的虽不具有具体的手性选择性但其半导体选择性高达97％，其中的碳纳米管为准直型，管径为1.5～2.7nm，长度为10～60μm。Although the horizontal array of (n, n-1) carbon nanotubes prepared in this example does not have specific chiral selectivity, its semiconductor selectivity is as high as 97%. ～2.7nm, length 10～60μm.
本实施例制备的(n，n-1)型半导体型碳纳米管水平阵列的SEM图如图1所示，由该图可以看出，该类型的碳纳米管的长度较短，仅有不到60微米长，阵列密度不高。The SEM figure of the horizontal array of (n, n-1) type semiconducting carbon nanotubes prepared in this embodiment is shown in Figure 1, as can be seen from this figure, the length of this type of carbon nanotubes is shorter, only a few to 60 microns long, the array density is not high.
本实施例制备的(n，n-1)型碳纳米管水平阵列中某一单根管的TEM图(内插图)及电子衍射如图2所示，由该图可以看出，该管手性为近armchair，符合(n，n-1)特征。The TEM image (inset) and electron diffraction of a single tube in the (n, n-1) type carbon nanotube horizontal array prepared in this embodiment are shown in Figure 2, as can be seen from this figure, the tube Sex is close to armchair, accord with (n, n-1) characteristic.
本实施例制备的(n，n-1)型碳纳米管水平阵列中某一单根管的光学吸收谱图如图3所示，由该图可以看出，该管具体手性为(13，12)。The optical absorption spectrum of a single tube in the (n, n-1) type carbon nanotube horizontal array prepared in this embodiment is shown in Figure 3, as can be seen from this figure, the specific chirality of the tube is (13 , 12).
将本实施例制备的(n,n-1)型单壁碳纳米管制成场效应晶体管器件，该场效应晶体管器件的具体结构如下：The (n, n-1) type single-walled carbon nanotube prepared in this embodiment is made into a field effect transistor device, and the specific structure of the field effect transistor device is as follows:
该器件为底栅器件，底栅材料为300nm SiO2/Si，源级和漏级均为Cr(8nm)/Au(100nm)，二者位于底栅上层，本实施制备的碳纳米管位于二者之间，作为沟道材料，进行电子或空穴的传输通道。The device is a bottom gate device, the bottom gate material is 300nm SiO2 /Si, the source and drain are both Cr(8nm)/Au(100nm), both are located on the upper layer of the bottom gate, and the carbon nanotubes prepared in this implementation are located on the second Between them, as a channel material, a transport channel for electrons or holes is carried out.
对该场效应晶体管器件的性能进行测试，所得结果如图4所示，可以看出，不同的碳纳米管被选择测试的结果都表明碳纳米管均为本征半导体(双极性特征)，开关比在103～107，这从另一个角度也反映了本发明制备的(n，n-1)型单壁碳纳米管水平的高质量。The performance of this field effect transistor device is tested, and the obtained results are shown in Figure 4. It can be seen that the results of different carbon nanotubes being selected and tested all show that the carbon nanotubes are all intrinsic semiconductors (bipolar characteristics), The on/off ratio is between 103 and 107 , which also reflects the high quality of the (n, n-1) type single-walled carbon nanotubes prepared by the present invention.
本实施例制备的(n，n-1)型碳纳米管水平阵列的单根碳纳米管拉曼光谱表征如图5所示，可以看出，碳纳米管没有D峰出现，结构比较完美，G峰具有明显的半导体型碳纳米管的特征。The Raman spectrum characterization of a single carbon nanotube of the (n, n-1) type carbon nanotube horizontal array prepared in this embodiment is shown in Figure 5. It can be seen that the carbon nanotube has no D peak, and the structure is relatively perfect. The G peak has obvious characteristics of semiconducting carbon nanotubes.
实施例2、Co催化剂制备(n，n-1)型碳纳米管水平阵列Embodiment 2, Co catalyst preparation (n, n-1) type carbon nanotube horizontal array
在单晶st-cut石英表面，以2500r/min的速度旋涂0.05mM的Co(OH)3胶体的乙醇溶液，然后将基底置于850℃的反应容器中，利用200sccm氢气还原10min，还原后，将氢气的流量改为350sccm，然后引入15sccm的乙醇蒸气(由氩气携带)，生长2h，然后关掉乙醇，关闭加热降温，获得(n，n-1)型半导体型碳纳米管水平阵列，其中，n为13～22之间的数(即为混合型的半导体型碳纳米管水平阵列)。On the single crystal st-cut quartz surface, spin-coat 0.05mM ethanol solution of Co(OH)3 colloid at a speed of 2500r/min, then place the substrate in a reaction vessel at 850°C, and reduce it with 200sccm hydrogen for 10min, after reduction , change the flow rate of hydrogen to 350sccm, then introduce 15sccm of ethanol vapor (carried by argon), grow for 2h, then turn off the ethanol, turn off the heating and cooling, and obtain the (n, n-1) type semiconducting carbon nanotube horizontal array , wherein, n is a number between 13 and 22 (namely, it is a horizontal array of mixed semiconducting carbon nanotubes).
本实施例制备的(n，n-1)碳纳米管水平阵列的半导体选择性高达95％，其中的碳纳米管为准直型，管径为1.5～2.5nm，长度为10～80μm。The semiconductor selectivity of the horizontal array of (n, n-1) carbon nanotubes prepared in this embodiment is as high as 95%. The carbon nanotubes are collimated, with a diameter of 1.5-2.5 nm and a length of 10-80 μm.
实施例3、Ni催化剂制备(n，n-1)型碳纳米管水平阵列Embodiment 3, Ni catalyst preparation (n, n-1) type carbon nanotube horizontal array
在单晶st-cut石英表面，以2500r/min的速度旋涂0.05mM的Ni(OH)3胶体的乙醇溶液，然后将基底置于880℃的反应容器中，利用200sccm氢气还原15min，还原后，将氢气的流量改为400sccm，然后引入25sccm的乙醇蒸气(由氩气携带)，生长2h，然后关掉乙醇，关闭加热降温，获得(n，n-1)型半导体型碳纳米管水平阵列，其中，n为13～22之间的数(即为混合型的半导体型碳纳米管水平阵列)。On the single crystal st-cut quartz surface, spin-coat 0.05mM Ni(OH)3 colloidal ethanol solution at a speed of 2500r/min, then place the substrate in a reaction vessel at 880°C, and reduce it with 200sccm hydrogen for 15min, after reduction , change the flow rate of hydrogen to 400sccm, then introduce 25sccm of ethanol vapor (carried by argon), grow for 2h, then turn off the ethanol, turn off the heating and cooling, and obtain a horizontal array of (n, n-1) type semiconducting carbon nanotubes , wherein, n is a number between 13 and 22 (namely, it is a horizontal array of mixed semiconducting carbon nanotubes).
本实施例制备的(n，n-1)碳纳米管水平阵列的半导体选择性高达93％，其中的碳纳米管为准直型，管径为1.6～2.6nm，长度为30～100μm。The semiconductor selectivity of the horizontal array of (n, n-1) carbon nanotubes prepared in this embodiment is as high as 93%. The carbon nanotubes are collimated, with a diameter of 1.6-2.6 nm and a length of 30-100 μm.
实施例4、制备(n，n-1)型中手性为(10，9)的碳纳米管水平阵列Example 4. Preparation of (n, n-1)-type carbon nanotube horizontal array with chirality of (10,9)
在单晶st-cut石英表面，以2500r/min的速度旋涂0.05mM的Co(OH)3胶体的乙醇溶液，然后将基底置于700℃的反应容器中，利用150sccm氢气还原15min，还原后，将氢气的流量改为300sccm，然后引入30sccm的乙醇蒸气(由氩气携带)，生长1h，然后关掉乙醇，关闭加热降温，获得(10，9)型半导体型碳纳米管水平阵列。On the single crystal st-cut quartz surface, spin-coat 0.05mM Co(OH)3 colloidal ethanol solution at a speed of 2500r/min, then place the substrate in a reaction vessel at 700°C, and reduce it with 150sccm hydrogen for 15min, after reduction , change the flow rate of hydrogen to 300sccm, then introduce 30sccm of ethanol vapor (carried by argon), grow for 1h, then turn off the ethanol, turn off the heating and cooling, and obtain a horizontal array of (10,9) type semiconducting carbon nanotubes.
本实施例制备的(10，9)碳纳米管水平阵列的手性选择性达60％，其中的碳纳米管为准直型，管径为1.1～1.4nm，长度为15～60μm。The chiral selectivity of the horizontal array of (10,9) carbon nanotubes prepared in this example is up to 60%. The carbon nanotubes are collimated, with a diameter of 1.1-1.4 nm and a length of 15-60 μm.
本实施例制备的(10，9)型碳纳米管水平阵列的SEM如图6所示，由该图可以看出，碳纳米管的平均长度在40微米，平均密度在每微米1根。The SEM of the horizontal array of (10,9) carbon nanotubes prepared in this embodiment is shown in Figure 6. It can be seen from this figure that the average length of carbon nanotubes is 40 microns, and the average density is 1 per micron.
本实施例制备的(n，n-1)型碳纳米管水平阵列的拉曼光谱如图7所示，由该图可以看出，该管具体手性为(10，9)。The Raman spectrum of the horizontal array of (n,n-1) carbon nanotubes prepared in this example is shown in Figure 7, from which it can be seen that the specific chirality of the tubes is (10,9).
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611044393.1ACN108085656B (en) | 2016-11-22 | 2016-11-22 | A (n, n-1) type carbon nanotube horizontal array and its preparation method |
| Application Number | Priority Date | Filing Date | Title |
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| CN201611044393.1ACN108085656B (en) | 2016-11-22 | 2016-11-22 | A (n, n-1) type carbon nanotube horizontal array and its preparation method |
| Publication Number | Publication Date |
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| CN108085656Atrue CN108085656A (en) | 2018-05-29 |
| CN108085656B CN108085656B (en) | 2019-11-12 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611044393.1AActiveCN108085656B (en) | 2016-11-22 | 2016-11-22 | A (n, n-1) type carbon nanotube horizontal array and its preparation method |
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| CN (1) | CN108085656B (en) |
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| CN111092155A (en)* | 2019-10-28 | 2020-05-01 | 温州大学 | Metal nanoparticle-containing single-walled carbon nanotube intramolecular junction and preparation method and application thereof |
| CN114703003A (en)* | 2022-04-14 | 2022-07-05 | 上海绿晟环保科技有限公司 | Carbon quantum dot-loaded nano-material lubricating additive and preparation method thereof |
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| CN1438072A (en)* | 2003-03-03 | 2003-08-27 | 清华大学 | Catayst for preparing carbon-nano tube |
| CN1748862A (en)* | 2005-08-29 | 2006-03-22 | 天津大学 | Method for preparing carbon nanotubes and carbon onions by Ni/Al catalyst chemical vapor deposition |
| CN1919728A (en)* | 2006-09-18 | 2007-02-28 | 北京大学 | Preparation method of reducing single-wall carbon nano-tube |
| CN101386408A (en)* | 2008-10-17 | 2009-03-18 | 北京大学 | A kind of semiconducting single-walled carbon nanotube and its preparation method |
| CN102001643A (en)* | 2010-12-08 | 2011-04-06 | 清华大学 | Overlong carbon nanotubes and preparation method thereof |
| CN102676859A (en)* | 2012-05-23 | 2012-09-19 | 天津大学 | Preparation method of in-situ synthesized carbon nanotube reinforced Mg-matrix composite |
| CN105565292A (en)* | 2014-10-29 | 2016-05-11 | 北京大学 | Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof |
| CN105621388A (en)* | 2014-10-29 | 2016-06-01 | 北京大学 | Single-walled carbon nanotube horizontal array and preparation method and application thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438072A (en)* | 2003-03-03 | 2003-08-27 | 清华大学 | Catayst for preparing carbon-nano tube |
| CN1748862A (en)* | 2005-08-29 | 2006-03-22 | 天津大学 | Method for preparing carbon nanotubes and carbon onions by Ni/Al catalyst chemical vapor deposition |
| CN1919728A (en)* | 2006-09-18 | 2007-02-28 | 北京大学 | Preparation method of reducing single-wall carbon nano-tube |
| CN101386408A (en)* | 2008-10-17 | 2009-03-18 | 北京大学 | A kind of semiconducting single-walled carbon nanotube and its preparation method |
| CN102001643A (en)* | 2010-12-08 | 2011-04-06 | 清华大学 | Overlong carbon nanotubes and preparation method thereof |
| CN102676859A (en)* | 2012-05-23 | 2012-09-19 | 天津大学 | Preparation method of in-situ synthesized carbon nanotube reinforced Mg-matrix composite |
| CN105565292A (en)* | 2014-10-29 | 2016-05-11 | 北京大学 | Ultra-high-density single-walled carbon nanotube horizontal array and controllable preparation method thereof |
| CN105621388A (en)* | 2014-10-29 | 2016-06-01 | 北京大学 | Single-walled carbon nanotube horizontal array and preparation method and application thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092155A (en)* | 2019-10-28 | 2020-05-01 | 温州大学 | Metal nanoparticle-containing single-walled carbon nanotube intramolecular junction and preparation method and application thereof |
| CN111092155B (en)* | 2019-10-28 | 2023-01-17 | 温州大学 | Intramolecular junction of single-walled carbon nanotubes containing metal nanoparticles and its preparation method and application |
| CN114703003A (en)* | 2022-04-14 | 2022-07-05 | 上海绿晟环保科技有限公司 | Carbon quantum dot-loaded nano-material lubricating additive and preparation method thereof |
| CN114703003B (en)* | 2022-04-14 | 2023-04-28 | 上海绿晟环保科技有限公司 | Nano material lubricating additive for loading carbon quantum dots and preparation method thereof |
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| CN108085656B (en) | 2019-11-12 |
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