技术领域Technical Field
本发明涉及发光二极管的LED芯片领域，具体地涉及一种倒装LED发光器件及其制备方法。The invention relates to the field of LED chips of light emitting diodes, and in particular to a flip-chip LED light emitting device and a preparation method thereof.
背景技术Background technique
随着LED相关产品技术的快速发展，倒装LED芯片凭借着其优势：一是没有通过蓝宝石散热，可通大电流使用；二是尺寸可以做到更小，光学更容易匹配；三是散热功能的提升，使芯片的寿命得到了提升；四是抗静电能力的提升；已成为LED行业的重点研究方向，然而LED芯片的封装仍存在漏电流(IR)问题。With the rapid development of LED-related product technologies, flip-chip LED chips have become the key research direction of the LED industry due to their advantages: first, there is no need to dissipate heat through sapphire, so they can be used with large currents; second, the size can be made smaller, and the optics are easier to match; third, the heat dissipation function is improved, which increases the life of the chip; fourth, the anti-static ability is improved. However, the packaging of LED chips still has leakage current (IR) problems.
现有的倒装LED芯片封装技术中，有通过共晶焊技术，以使得LED芯片和支架基体进行良好的焊接，并避免IR问题，但该技术投入成本高，且共晶焊技术中温度高达320℃，这是常规的SMD塑胶支架和白油类支架基体所无法承受的应用条件，该温度已超过塑胶熔融温度，易导致其熔融变形，白油黄变，反射率急剧下降。Among the existing flip-chip LED chip packaging technologies, eutectic welding technology is used to achieve good welding between the LED chip and the bracket substrate and avoid IR problems. However, the technology has high investment costs and the temperature in the eutectic welding technology is as high as 320°C, which is an application condition that conventional SMD plastic brackets and white oil bracket substrates cannot withstand. This temperature exceeds the melting temperature of the plastic, which can easily cause it to melt and deform, the white oil to turn yellow, and the reflectivity to drop sharply.
LED芯片采用锡膏固晶技术虽然实用性强，性价比高。但是封装后由于锡膏在回流焊时的熔融方向不可控，而出现锡膏流动导通LED芯片底部的正负极，从而出现IR问题。Although LED chip soldering technology is practical and cost-effective, the melting direction of solder paste during reflow soldering is uncontrollable after packaging, and the solder paste flows to the positive and negative electrodes at the bottom of the LED chip, resulting in IR problems.
有的在倒装LED支架的负极区域设置有凹槽，锡膏可均匀填充于凹槽中，回流焊时熔融锡膏不会移动偏移，从而避免封装过程锡膏熔融偏移造成的IR问题。但是，正负极导电材料厚度有限，凹槽的深度受到很大的限制，过浅难以达到隔离锡膏的效果，加深凹槽的深度会需要增加正负极导电材料厚度，大大增加了倒装LED支架成本。Some flip-chip LED brackets have grooves in the negative area, and the solder paste can be evenly filled in the grooves. The molten solder paste will not move or deviate during reflow soldering, thus avoiding IR problems caused by the melting and deviation of the solder paste during the packaging process. However, the thickness of the positive and negative conductive materials is limited, and the depth of the grooves is greatly limited. If the grooves are too shallow, it is difficult to achieve the effect of isolating the solder paste. Increasing the depth of the grooves will require increasing the thickness of the positive and negative conductive materials, greatly increasing the cost of the flip-chip LED brackets.
发明内容Summary of the invention
本发明的技术目的是针对上述的LED芯片的封装仍存在漏电流(IR)问题，提供一种倒装LED发光器件。The technical purpose of the present invention is to provide a flip-chip LED light-emitting device in view of the leakage current (IR) problem still existing in the packaging of the above-mentioned LED chip.
本发明的技术目的是通过以下技术方案来实现的：The technical objectives of the present invention are achieved through the following technical solutions:
本发明所述的倒装LED发光器件，包括支架、倒装LED芯片，所述倒装LED芯片通过锡膏固定在所述支架上，所述支架的正极固晶区和负极固晶区的外部各设置有一绝缘围坝隔离带。The flip-chip LED light-emitting device of the present invention comprises a bracket and a flip-chip LED chip, wherein the flip-chip LED chip is fixed on the bracket by solder paste, and an insulating dam isolation zone is respectively arranged outside the positive electrode solid crystal area and the negative electrode solid crystal area of the bracket.
本发明具体地，所述支架包括铜片及设置在铜片两端的支架基体，所述绝缘围坝隔离带间的支架基体上设有绝缘导热胶。Specifically, the support comprises a copper sheet and a support base disposed at both ends of the copper sheet, and an insulating heat-conducting adhesive is disposed on the support base between the insulating dam isolation zones.
本发明具体地，所述绝缘围坝隔离带呈直条形且相互平行，或形成圆弧型。Specifically, the insulating dam isolation zones are in the form of straight strips and are parallel to each other, or form an arc shape.
本发明优选地，所述绝缘围坝隔离带的高度为0.1～0.2mm。Preferably, in the present invention, the height of the insulating dam isolation zone is 0.1-0.2 mm.
作为本发明的一种优选，所述倒装LED芯片的表面上包覆有封装胶体和荧光粉的混合层，或包覆有封装胶体层。As a preferred embodiment of the present invention, the surface of the flip-chip LED chip is coated with a mixed layer of encapsulation colloid and phosphor, or is coated with an encapsulation colloid layer.
本发明具体地，所述绝缘围坝隔离带为塑胶绝缘围坝隔离带；所述支架基体为塑胶支架基体；优选地所述绝缘围坝、支架基体采用PA6T、PA9T、PA10、PCT或LCP；更优选地采用PA6T、PA9T或PCT塑胶。Specifically, the insulating dam isolation zone is a plastic insulating dam isolation zone; the support base is a plastic support base; preferably, the insulating dam and the support base are made of PA6T, PA9T, PA10, PCT or LCP; more preferably, PA6T, PA9T or PCT plastic is used.
本发明具体地，所述绝缘导热胶为有机绝缘硅导热胶；优选为环氧树脂AB胶，五氧化三钛，聚氨酯胶或导热硅脂。Specifically, the insulating thermally conductive adhesive is an organic insulating silicone thermally conductive adhesive; preferably epoxy resin AB adhesive, titanium pentoxide, polyurethane adhesive or thermally conductive silicone grease.
本发明更优选地，所述支架为贴片式支架或平板式支架。More preferably in the present invention, the bracket is a patch-type bracket or a flat-plate bracket.
本发明的另一种技术目的是提供一种上述的LED发光器件的制备方法，包括如下步骤：Another technical purpose of the present invention is to provide a method for preparing the above-mentioned LED light-emitting device, comprising the following steps:
S1：通过锡膏将倒装LED芯片固定于支架上，然后在所述支架的正极固晶区与负极固晶区的外部各设一绝缘围坝隔离带；S1: Fixing the flip-chip LED chip on the bracket by solder paste, and then providing an insulating dam isolation belt outside the positive electrode solid crystal area and the negative electrode solid crystal area of the bracket;
S2：然后在倒装LED芯片的表面上涂覆封装胶和荧光粉的混合物，或涂覆封装胶。S2: Then, a mixture of encapsulation adhesive and phosphor is coated on the surface of the flip-chip LED chip, or encapsulation adhesive is coated.
本发明更进一步地，所述步骤S1后还包括如下步骤：在所述绝缘围坝隔离带之间涂覆绝缘导热胶。本发明的倒装LED发光器件相对于现有LED发光器件具有以下优点:The present invention further comprises the following step after step S1: coating insulating thermally conductive adhesive between the insulating dam isolation zones. The flip-chip LED light-emitting device of the present invention has the following advantages over the existing LED light-emitting devices:
1.绝缘围坝隔离带可有效防止锡膏流动导致的正负极连通造成漏电现象；1. The insulating dam isolation belt can effectively prevent the positive and negative poles from being connected due to the flow of solder paste and causing leakage;
2.正极固晶区、负极固晶区之间涂覆一层绝缘导热胶，能够加快散热的同时也可有效防止漏电，增加良品率。2. A layer of insulating thermal conductive glue is applied between the positive electrode solid crystal area and the negative electrode solid crystal area, which can accelerate heat dissipation and effectively prevent leakage, thereby increasing the yield rate.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明的LED支架应用于白光LED封装后的整体结构的侧剖面示意图。FIG1 is a side cross-sectional schematic diagram of the overall structure of the LED bracket of the present invention after being applied to white light LED packaging.
图2为本发明的LED支架应用于RGB彩光LED封装后的整体结构的侧剖面示意图。FIG. 2 is a side cross-sectional schematic diagram of the overall structure of the LED bracket of the present invention after being applied to RGB color LED packaging.
图3为本发明的LED支架应用LED封装后的整体结构的俯视图。FIG. 3 is a top view of the overall structure of the LED bracket of the present invention after LED packaging is applied.
图4为图3的(绝缘围坝隔离带)另外一种实施方式的俯视图。FIG. 4 is a top view of another embodiment of the (insulating dam isolation zone) of FIG. 3 .
附图标记说明：Description of reference numerals:
1、锡膏；2、绝缘围坝隔离带；3、绝缘导热胶；4、倒装LED芯片；1. Solder paste; 2. Insulation dam isolation tape; 3. Insulation thermal conductive adhesive; 4. Flip-chip LED chip;
5、荧光粉和封装胶体混合层；6、支架基体；7、封装胶体层；8、铜片5. Phosphor and encapsulation colloid mixed layer; 6. Bracket matrix; 7. Encapsulation colloid layer; 8. Copper sheet
具体实施方式Detailed ways
以下结合附图对本发明的具体实施例进行详细说明。The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
实施例1Example 1
请参阅图1、图3，本发明实施例1中的倒装LED发光器件包括支架、倒装LED芯片(4)。所述支架包括铜片(8)及设置在所述铜片两端的支架基体(6)。所述倒装LED芯片(4)通过锡膏(1)固定在所述支架上，所述支架的正极固晶区和负极固晶区的外部(也可以说是锡膏(1)的外部)，位于所述支架基体(6)上各设置有一绝缘围坝隔离带(2)。这样所述绝缘隔离带(2)可将倒装LED芯片的正极和负极分开，并能防止所述锡膏(1)流动导致的正负极连通造成漏电现象。所述倒装LED芯片(4)通过锡膏(1)固定在所述绝缘围坝隔离带(2)上方。Please refer to Figures 1 and 3. The flip-chip LED light-emitting device in Example 1 of the present invention includes a bracket and a flip-chip LED chip (4). The bracket includes a copper sheet (8) and a bracket base (6) arranged at both ends of the copper sheet. The flip-chip LED chip (4) is fixed to the bracket by solder paste (1), and an insulating dam isolation belt (2) is arranged on the bracket base (6) outside the positive electrode solid crystal area and the negative electrode solid crystal area of the bracket (it can also be said to be the outside of the solder paste (1)). In this way, the insulating isolation belt (2) can separate the positive and negative electrodes of the flip-chip LED chip, and can prevent the positive and negative electrodes from being connected due to the flow of the solder paste (1) and causing leakage. The flip-chip LED chip (4) is fixed above the insulating dam isolation belt (2) by solder paste (1).
在所述绝缘围坝隔离带(2)之间的支架基体(6)上填充满绝缘导热胶(3)，所述荧光粉和封装胶的混合层(5)包覆在所述LED芯片(4)的表面上。所述绝缘围坝隔离带(2)与所述支架基体(6)均可采用塑胶料，并且可采用相同的塑胶料，并且所述绝缘围坝隔离带(2)与所述支架基体(6)可以一体化注塑成型。The support base (6) between the insulating dam isolation zone (2) is filled with insulating thermal conductive glue (3), and the mixed layer (5) of phosphor and packaging glue is coated on the surface of the LED chip (4). The insulating dam isolation zone (2) and the support base (6) can both be made of plastic material, and can be made of the same plastic material, and the insulating dam isolation zone (2) and the support base (6) can be integrally injection molded.
优选地，所述绝缘围坝隔离带(2)与所述支架基体(6)的材料为热可塑性树脂PPA(Polyphthalamide)，具体而言，PPA塑胶又可细分为PA6T、PA9T、PA10、PCT、LCP等5类，各类塑胶材料分子结构、添加剂及玻璃纤维含量不同，功能各有侧重，应用最广泛的为PA6T、PA9T和PCT塑胶。Preferably, the material of the insulating dam isolation zone (2) and the support matrix (6) is a thermoplastic resin PPA (Polyphthalamide). Specifically, PPA plastic can be further divided into five categories, namely PA6T, PA9T, PA10, PCT, and LCP. Each type of plastic material has different molecular structures, additives, and glass fiber contents, and has different functional emphases. The most widely used are PA6T, PA9T, and PCT plastics.
优选地，所述的绝缘导热胶(3)的材料为有机硅导热胶，具体而言，有机硅导热胶又细分为环氧树脂AB胶，五氧化三钛，聚氨酯胶，导热硅脂等。Preferably, the material of the insulating thermally conductive adhesive (3) is organic silicon thermally conductive adhesive. Specifically, organic silicon thermally conductive adhesive is further divided into epoxy resin AB adhesive, titanium pentoxide, polyurethane adhesive, thermal conductive silicone grease, etc.
实施例1所述LED发光器件的制备方法，包括如下步骤：The method for preparing the LED light-emitting device described in Example 1 comprises the following steps:
S1：通过锡膏(1)将倒装LED芯片(4)固定于支架上，然后在所述支架的正极固晶区与负极固晶区的外部各设一绝缘围坝隔离带(2)；S1: fixing a flip-chip LED chip (4) on a bracket by using solder paste (1), and then providing an insulating dam isolation zone (2) outside the positive electrode solid crystal region and the negative electrode solid crystal region of the bracket;
S2：在所述绝缘围坝隔离带(2)之间涂覆绝缘导热胶(3)；S2: applying an insulating thermally conductive adhesive (3) between the insulating dam isolation strips (2);
S3：然后在倒装LED芯片的表面上涂覆/填充封装胶和荧光粉的混合层。S3: Then a mixed layer of encapsulation glue and phosphor is coated/filled on the surface of the flip-chip LED chip.
实施例2Example 2
请参阅图2、图3，本发明实施案例2的请参阅图1、图3，本发明实施例1中的倒装LED发光器件包括支架、倒装LED芯片(4)(蓝光芯片或红光芯片)。所述支架包括铜片(8)及设置在所述铜片两端的支架基体(6)。所述倒装LED芯片(4)通过锡膏(1)固定在所述支架上，所述支架的正极固晶区和负极固晶区的外部(也可以说是锡膏(1)的外部)，位于所述支架基体(6)上各设置有一绝缘围坝隔离带(2)。这样所述绝缘隔离带(2)可将倒装LED芯片的正极和负极分开，并能防止所述锡膏(1)流动导致的正负极连通造成漏电现象。Please refer to Figures 2 and 3. For Example 2 of the present invention, please refer to Figures 1 and 3. The flip-chip LED light-emitting device in Example 1 of the present invention includes a bracket and a flip-chip LED chip (4) (a blue light chip or a red light chip). The bracket includes a copper sheet (8) and a bracket base (6) disposed at both ends of the copper sheet. The flip-chip LED chip (4) is fixed to the bracket by solder paste (1). The outside of the positive electrode solid crystal area and the negative electrode solid crystal area of the bracket (which can also be said to be the outside of the solder paste (1)) is provided with an insulating dam isolation belt (2) on the bracket base (6). In this way, the insulating isolation belt (2) can separate the positive and negative electrodes of the flip-chip LED chip, and can prevent the positive and negative electrodes from being connected due to the flow of the solder paste (1) and causing leakage.
在所述绝缘围坝隔离带(2)之间的支架基体(6)上填充满绝缘导热胶(3)，所述封装胶体层(7)包覆在所述LED芯片(4)的表面上。所述绝缘围坝隔离带(2)与所述支架基体(6)均可采用塑胶料，并且可采用相同的塑胶料，并且所述绝缘围坝隔离带(2)与所述支架基体(6)可以一体化注塑成型。The support base (6) between the insulating dam isolation belt (2) is filled with insulating thermal conductive glue (3), and the packaging glue layer (7) is coated on the surface of the LED chip (4). The insulating dam isolation belt (2) and the support base (6) can both be made of plastic material, and can be made of the same plastic material, and the insulating dam isolation belt (2) and the support base (6) can be integrally injection molded.
优选地，所述绝缘围坝隔离带(2)与所述支架基体(6)的材料为热可塑性树脂PPA(Polyphthalamide)，具体而言，PPA塑胶又可细分为PA6T、PA9T、PA10、PCT、LCP等5类，各类塑胶材料分子结构、添加剂及玻璃纤维含量不同，功能各有侧重，应用最广泛的为PA6T、PA9T和PCT塑胶。Preferably, the material of the insulating dam isolation zone (2) and the support matrix (6) is a thermoplastic resin PPA (Polyphthalamide). Specifically, PPA plastic can be further divided into five categories, namely PA6T, PA9T, PA10, PCT, and LCP. Each type of plastic material has different molecular structures, additives, and glass fiber contents, and has different functional emphases. The most widely used are PA6T, PA9T, and PCT plastics.
优选地，所述绝缘导热胶(3)的材料为有机硅导热胶，具体而言，有机硅导热胶又细分为环氧树脂AB胶，五氧化三钛，聚氨酯胶，导热硅脂等。Preferably, the material of the insulating thermally conductive adhesive (3) is organic silicon thermally conductive adhesive. Specifically, organic silicon thermally conductive adhesive is further subdivided into epoxy resin AB adhesive, titanium pentoxide, polyurethane adhesive, thermal conductive silicone grease, etc.
实施例2所述LED发光器件的制备方法，包括如下步骤：The method for preparing the LED light-emitting device described in Example 2 comprises the following steps:
S1：通过锡膏(1)将倒装LED芯片(4)固定于支架上，然后在所述支架的正极固晶区与负极固晶区的外部各设一绝缘围坝隔离带(2)；S1: fixing a flip-chip LED chip (4) on a bracket by using solder paste (1), and then providing an insulating dam isolation zone (2) outside the positive electrode solid crystal region and the negative electrode solid crystal region of the bracket;
S2：在所述绝缘围坝隔离带(2)之间涂覆绝缘导热胶(3)；S2: applying an insulating thermally conductive adhesive (3) between the insulating dam isolation strips (2);
S3：然后在倒装LED芯片的表面上涂覆/填充封装胶体层(7)。S3: Then, a packaging colloid layer (7) is coated/filled on the surface of the flip-chip LED chip.
实施例3Example 3
请参阅图1、图4，与实施例1和实施例2的方案接近，只是绝缘围坝隔离带(2)的形状有所不同，实施例1～2中所述绝缘围坝隔离带(2)是呈直条形且相互平行，实施案例3中，绝缘围坝隔离带是两个圆弧型的绝缘围坝隔离带。本发明中的绝缘围坝隔离带可根据实际需求进行调整，同样可以达到隔绝锡膏流动导通的漏电问题。Please refer to Figures 1 and 4, which are similar to the solutions of Examples 1 and 2, except that the shape of the insulating dam isolation belt (2) is different. The insulating dam isolation belts (2) in Examples 1 and 2 are straight strips and parallel to each other, while in Implementation Case 3, the insulating dam isolation belts are two arc-shaped insulating dam isolation belts. The insulating dam isolation belt in the present invention can be adjusted according to actual needs, and can also achieve the problem of leakage caused by the flow and conduction of solder paste.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711024187.9ACN107819065B (en) | 2017-10-27 | 2017-10-27 | Flip LED light-emitting device and preparation method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711024187.9ACN107819065B (en) | 2017-10-27 | 2017-10-27 | Flip LED light-emitting device and preparation method thereof |
| Publication Number | Publication Date |
|---|---|
| CN107819065A CN107819065A (en) | 2018-03-20 |
| CN107819065Btrue CN107819065B (en) | 2024-08-02 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711024187.9AActiveCN107819065B (en) | 2017-10-27 | 2017-10-27 | Flip LED light-emitting device and preparation method thereof |
| Country | Link |
|---|---|
| CN (1) | CN107819065B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109096872A (en)* | 2018-07-06 | 2018-12-28 | 深圳市艾森视讯科技有限公司 | A kind of high factor optical conductive filler material |
| CN108682731A (en)* | 2018-07-18 | 2018-10-19 | 易美芯光（北京）科技有限公司 | A kind of LED encapsulation structure with upside-down mounting SMD |
| CN111916433B (en)* | 2019-05-10 | 2022-07-22 | 深圳市洲明科技股份有限公司 | LED display screen and preparation method thereof |
| CN112271244B (en)* | 2020-11-13 | 2025-05-23 | 江西鸿利光电有限公司 | A flip-chip LED implementation structure and method |
| CN112838080B (en)* | 2020-12-31 | 2025-09-09 | 广东晶科电子股份有限公司 | Flip LED light-emitting device and manufacturing method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653977A (en)* | 2017-02-24 | 2017-05-10 | 厦门多彩光电子科技有限公司 | Flip chip packaging structure and forming method |
| CN208157452U (en)* | 2017-10-27 | 2018-11-27 | 广东晶科电子股份有限公司 | A kind of flip LED luminescent device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4643918B2 (en)* | 2004-03-10 | 2011-03-02 | シチズン電子株式会社 | Optical semiconductor package |
| CN102931313B (en)* | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | Flip-chip light-emitting diode and manufacturing method thereof |
| CN203562443U (en)* | 2013-10-16 | 2014-04-23 | 东莞市正光光电科技有限公司 | Die bonding equipment |
| CN105449087A (en)* | 2015-11-13 | 2016-03-30 | 广州市雷腾照明科技有限公司 | Die bonding method for flip LED chips |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653977A (en)* | 2017-02-24 | 2017-05-10 | 厦门多彩光电子科技有限公司 | Flip chip packaging structure and forming method |
| CN208157452U (en)* | 2017-10-27 | 2018-11-27 | 广东晶科电子股份有限公司 | A kind of flip LED luminescent device |
| Publication number | Publication date |
|---|---|
| CN107819065A (en) | 2018-03-20 |
| Publication | Publication Date | Title |
|---|---|---|
| CN107819065B (en) | Flip LED light-emitting device and preparation method thereof | |
| CN105895785B (en) | Light source assembly structure of flip LED chips integration packaging and preparation method thereof | |
| US7700386B2 (en) | Packaging method of LED of high heat-conducting efficiency and structure thereof | |
| CN104851961B (en) | The chip-scale packaging method and structure of luminescent device | |
| TW201143023A (en) | Light emitting diode package, lighting device and light emitting diode package substrate | |
| CN104393154A (en) | Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source | |
| CN107112384A (en) | Light Emitting Diode (LED) Components Comprising LED Dies Attached Directly to Lead Frames | |
| WO2012012975A1 (en) | Led chip surface mounted packaging structure based on silicon substrate and packaging method thereof | |
| CN112864296B (en) | An LED package device | |
| CN102376845A (en) | Packaging structure of light-emitting diode | |
| CN106856218A (en) | One kind exempts from packaged LED structure and preparation method thereof | |
| CN104037302B (en) | LED (light-emitting diode) package assembly | |
| CN101777549B (en) | Packaging module structure of compound semiconductor elements and production method thereof | |
| CN104752595B (en) | Packaging method of flip-chip LED chip and flip-chip LED chip using the packaging method | |
| TWI336966B (en) | Led package with uniform color phase | |
| CN103943763A (en) | Packaging structure and method for flip LED chip | |
| CN208157452U (en) | A kind of flip LED luminescent device | |
| TWI528596B (en) | Light-emitting diode package structure and manufacturing method thereof | |
| CN103956420A (en) | LED crystal covering structure coated with fluorescent powder and manufacturing method of LED crystal covering structure coated with fluorescent powder | |
| US20120196393A1 (en) | Packaging method of wafer level chips | |
| US20190252590A1 (en) | Light emitting device package with reflective side coating | |
| CN202042478U (en) | Semiconductor element package and light emitting element using the package | |
| CN105428505A (en) | Support used for LED flip die bond and die bond method utilizing support | |
| CN113130730A (en) | Light emitting device packaging method and light emitting device | |
| CN103244863B (en) | Backing structure and manufacture method thereof |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information | Address after:511458 33 Nansha District City Road South, Nansha District, Guangzhou, Guangdong Applicant after:APT ELECTRONICS Co.,Ltd. Address before:511458 No. 33, South Ring Road, Nansha District, Guangzhou, Guangdong. Applicant before:APT ELECTRONICS Co.,Ltd. | |
| GR01 | Patent grant | ||
| GR01 | Patent grant |