技术领域technical field
本发明涉及微型发光元件及其制造方法以及微型发光元件应用的显示装置置与过渡载板装置。The invention relates to a micro-light-emitting element, a manufacturing method thereof, a display device and a transition carrier device applied to the micro-light-emitting element.
背景技术Background technique
微型发光二极管阵列(Micro Light-Emitting Diode Array)为将尺寸微小(小于100微米)的微型发光二极管以阵列方式排列设置于具有像素电路的阵列基板上。通过定址化驱动技术，每个微型发光二极管可以定址控制、单独驱动点亮，因而可以作为点像素，于是，微型发光二极管阵列将能发挥显示器的功能。Micro Light-Emitting Diode Array (Micro Light-Emitting Diode Array) is a micro-sized (less than 100 microns) micro-LEDs arranged in an array on an array substrate with pixel circuits. Through the addressable driving technology, each micro light emitting diode can be addressed and controlled, and driven to light up independently, so it can be used as a point pixel, so the micro light emitting diode array will be able to play the function of a display.
除了具有高效率、高亮度、高可靠度及反应时间快等特点，微型发光二极管阵列更具节能、机构简易、体积小、薄型等优势。比起同样是自发光的有机发光二极管(OrganicLight-Emitting Diode)显示器，微型发光二极管阵列有较佳的材料稳定性、寿命长、且无影像烙印等问题。In addition to the characteristics of high efficiency, high brightness, high reliability, and fast response time, the micro LED array has the advantages of energy saving, simple mechanism, small size, and thin profile. Compared with organic light-emitting diode (Organic Light-Emitting Diode) displays that are also self-illuminating, micro-LED arrays have better material stability, long life, and no image burn-in.
为了进一步改善微型发光二极管阵列的各项特性，相关领域莫不费尽心思开发。如何能提供一种具有较佳特性的微型发光二极管阵列与其相关工艺，实属当前重要研发课题之一，亦成为当前相关领域亟需改进的目标。In order to further improve the various characteristics of the miniature light-emitting diode array, the relevant fields have spent all their efforts on development. How to provide a micro light-emitting diode array with better characteristics and related processes is one of the current important research and development topics, and has also become an urgent goal for improvement in related fields.
发明内容Contents of the invention
本发明的多个实施方式中，藉由支撑部的设置，降低微型发光元件与载体基板的黏着力，以便于微型发光元件的转移。此外，还可设计微型发光元件的反射层的形状，以利于改善微型发光元件的发光光线分布或出光效率。In various embodiments of the present invention, the setting of the support portion reduces the adhesion between the micro-light-emitting element and the carrier substrate, so as to facilitate the transfer of the micro-light-emitting element. In addition, the shape of the reflective layer of the micro-light-emitting element can also be designed to facilitate the improvement of light distribution or light-extraction efficiency of the micro-light-emitting element.
根据本发明的部分实施方式，微型发光元件包含图案化黏着层、发光二极管以及反射层。图案化黏着层具有相对的底面与顶面。发光二极管设置于图案化黏着层的顶面，其中发光二极管至少包含第一半导体层、与第一半导体层部分重叠的第二半导体层、第一电极连接该第一半导体层以及第二电极连接第二半导体层。反射层设置于图案化黏着层的底面，反射层具有多个第一峰部与多个第一谷部以具有高低起伏的表面。According to some embodiments of the present invention, the micro-light-emitting element includes a patterned adhesive layer, a light-emitting diode, and a reflective layer. The patterned adhesive layer has a bottom surface and a top surface opposite to each other. The light-emitting diode is disposed on the top surface of the patterned adhesive layer, wherein the light-emitting diode at least includes a first semiconductor layer, a second semiconductor layer partially overlapping the first semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the first semiconductor layer. Two semiconductor layers. The reflective layer is disposed on the bottom surface of the patterned adhesive layer, and the reflective layer has a plurality of first peaks and a plurality of first valleys to have a surface with ups and downs.
于本发明的部分实施方式中，微型发光元件更包括一支撑部，自反射层朝远离发光二极管的方向突出，其中支撑部的材料包含反射层与图案化黏着层其中至少一者的材料。In some embodiments of the present invention, the micro light-emitting device further includes a support portion protruding from the reflective layer toward a direction away from the light-emitting diode, wherein the material of the support portion includes at least one of the reflective layer and the patterned adhesive layer.
于本发明的部分实施方式中，支撑部包含反射延伸部以及黏着延伸部，黏着延伸部自图案化黏着层朝远离发光二极管的方向突出，其中黏着延伸部设置于反射延伸部与图案化黏着层之间。In some embodiments of the present invention, the supporting portion includes a reflective extension portion and an adhesive extension portion, and the adhesive extension portion protrudes from the patterned adhesive layer toward a direction away from the light-emitting diode, wherein the adhesive extension portion is disposed between the reflective extension portion and the patterned adhesive layer between.
于本发明的部分实施方式中，图案化黏着层更具有多个峰部与多个谷部以呈高低起伏的表面，且图案化黏着层的各该峰部对应于各该第一峰部，且图案化黏着层的各该谷部对应于各该第一谷部。In some embodiments of the present invention, the patterned adhesive layer further has a plurality of peaks and a plurality of valleys to form an undulating surface, and each of the peaks of the patterned adhesive layer corresponds to each of the first peaks, And each of the valleys of the patterned adhesive layer corresponds to each of the first valleys.
于本发明的部分实施方式中，微型发光元件更包含一钝化层，设置于发光二极管的侧边，且延伸覆盖图案化黏着层的侧边。In some embodiments of the present invention, the micro light emitting device further includes a passivation layer disposed on the side of the light emitting diode and extending to cover the side of the patterned adhesive layer.
于本发明的部分实施方式中，钝化层更延伸至反射层。In some embodiments of the present invention, the passivation layer further extends to the reflective layer.
于本发明的部分实施方式中，支撑部于第一方向具有第一宽度，发光二极管于第一方向具有第二宽度，且支撑部的第一宽度小于发光二极管的第二宽度。In some embodiments of the present invention, the support portion has a first width in the first direction, the LED has a second width in the first direction, and the first width of the support portion is smaller than the second width of the LED.
于本发明的部分实施方式中，反射层包含一中央区与一周边区，周边区设置于中央区外侧，且位于中央区的峰部的两相邻距离为第一距离，位于周边区的峰部的两相邻距离为第二距离，其中第一距离与第二距离不相等的。In some embodiments of the present invention, the reflective layer includes a central area and a peripheral area, the peripheral area is disposed outside the central area, and the distance between two adjacent peaks located in the central area is the first distance, and the peaks located in the peripheral area The distance between two adjacent parts is the second distance, wherein the first distance and the second distance are not equal.
于本发明的部分实施方式中，反射层包含金属、合金、金属盐类、合金盐类或前述的组合。In some embodiments of the present invention, the reflective layer includes metal, alloy, metal salt, alloy salt or a combination thereof.
根据本发明的部分实施方式，显示装置包含阵列基板、附着层以及前述的微型发光元件。附着层设置于阵列基板上。微型发光元件设置于阵列基板上，且微型发光元件经由附着层附着于阵列基板上。According to some embodiments of the present invention, a display device includes an array substrate, an adhesion layer, and the aforementioned micro light-emitting elements. The adhesion layer is disposed on the array substrate. The micro light emitting elements are arranged on the array substrate, and the micro light emitting elements are attached to the array substrate through the adhesion layer.
于本发明的部分实施方式中，微型发光元件更包含支撑部，往阵列基板延伸，其中支撑部包含反射层与图案化黏着层其中至少一者。In some embodiments of the present invention, the micro light-emitting element further includes a support portion extending toward the array substrate, wherein the support portion includes at least one of a reflective layer and a patterned adhesive layer.
根据本发明的部分实施方式，过渡载板装置包含载体基板、前述的微型发光元件以及图案化光阻层。微型发光元件设置于载体基板上，其中该微型发光元件包含一支撑部，其中支撑部的材料包含反射层与图案化黏着层其中至少一者的材料。图案化光阻层设置于载体基板与微型发光元件之间，其中图案化光阻层具有多个第二峰部与多个第二谷部，其中第一峰部与第一谷部对应设置于第二峰部与第二谷部上，且微型发光元件的支撑部往载体基板的内表面延伸。According to some embodiments of the present invention, the transitional carrier device includes a carrier substrate, the aforementioned micro light-emitting elements, and a patterned photoresist layer. The micro-light-emitting element is disposed on the carrier substrate, wherein the micro-light-emitting element includes a support portion, wherein the material of the support portion includes at least one of the reflective layer and the patterned adhesive layer. The patterned photoresist layer is disposed between the carrier substrate and the micro light-emitting element, wherein the patterned photoresist layer has a plurality of second peaks and a plurality of second valleys, wherein the first peaks and the first valleys are correspondingly arranged on On the second peak and the second valley, the supporting part of the micro light-emitting element extends toward the inner surface of the carrier substrate.
于本发明的部分实施方式中，支撑部与载体基板直接接触。In some embodiments of the present invention, the support portion is in direct contact with the carrier substrate.
根据本发明的部分实施方式，制造微型发光元件的方法包含形成光阻层于载体基板上；将光阻层的表面图案化，形成图案化光阻层；形成一反射层于图案化光阻层上，其中反射层沿图案化光阻层的表面设置而具有一高低起伏的表面；形成黏着层于反射层上，其中黏着层的底部为一高低起伏的表面；设置发光二极管，于黏着层上；将黏着层图案化，形成一图案化黏着层；以及将图案化光阻层移除。According to some embodiments of the present invention, the method for manufacturing a micro light-emitting element includes forming a photoresist layer on a carrier substrate; patterning the surface of the photoresist layer to form a patterned photoresist layer; forming a reflective layer on the patterned photoresist layer above, wherein the reflective layer is arranged along the surface of the patterned photoresist layer and has a surface with ups and downs; an adhesive layer is formed on the reflective layer, wherein the bottom of the adhesive layer is a surface with ups and downs; light-emitting diodes are arranged on the adhesive layer ; patterning the adhesive layer to form a patterned adhesive layer; and removing the patterned photoresist layer.
于本发明的部分实施方式中，反射层具有多个第一峰部与多个第一谷部以具有高低起伏的表面，图案化光阻层具有多个第二峰部与多个第二谷部，且第一峰部与第一谷部对应设置于第二峰部与第二谷部上，将该光阻层的表面图案化是采用一纳米压印步骤形成。In some embodiments of the present invention, the reflective layer has a plurality of first peaks and a plurality of first valleys to have an undulating surface, and the patterned photoresist layer has a plurality of second peaks and a plurality of second valleys portion, and the first peak portion and the first valley portion are correspondingly arranged on the second peak portion and the second valley portion, and the surface patterning of the photoresist layer is formed by adopting a nanoimprinting step.
于本发明的部分实施方式中，制造微型发光元件的方法更包含在将光阻层的表面图案化之前，形成一开口于光阻层中；以及形成一反射延伸部于该开口中，其中该反射延伸部与该反射层的材料相同。In some embodiments of the present invention, the method for manufacturing a micro light-emitting device further includes forming an opening in the photoresist layer before patterning the surface of the photoresist layer; and forming a reflective extension in the opening, wherein the The reflective extension is the same material as the reflective layer.
于本发明的部分实施方式中，制造微型发光元件的方法更包含在将光阻层的表面图案化之前，形成开口于光阻层中；以及形成一黏着延伸部于该开口中，其中黏着层与该黏着延伸部的材料相同。In some embodiments of the present invention, the method for manufacturing a micro light-emitting device further includes forming an opening in the photoresist layer before patterning the surface of the photoresist layer; and forming an adhesive extension in the opening, wherein the adhesive layer Same material as the adhesive extension.
于本发明的部分实施方式中，制造微型发光元件的方法更包含覆盖一图案化钝化层于该发光二极管上，且延伸覆盖该发光二极管的侧边与图案化黏着层的侧边。In some embodiments of the present invention, the method of manufacturing the micro light emitting device further includes covering a patterned passivation layer on the light emitting diode, and extending to cover the side of the light emitting diode and the side of the patterned adhesive layer.
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明Description of drawings
图1为根据本发明的部分实施方式的制造微型发光元件的方法的流程图。FIG. 1 is a flowchart of a method of manufacturing a micro light emitting device according to some embodiments of the present invention.
图2至图13为根据本发明的部分实施方式的制造微型发光元件的方法于多个阶段的剖面示意图。2 to 13 are cross-sectional schematic diagrams at various stages of a method for manufacturing a micro light-emitting device according to some embodiments of the present invention.
图14为根据本发明的部分实施方式的微型发光元件的剖面示意图。Fig. 14 is a schematic cross-sectional view of a micro light-emitting element according to some embodiments of the present invention.
图15为根据本发明的部分实施方式的微型发光元件的剖面示意图。Fig. 15 is a schematic cross-sectional view of a micro light-emitting element according to some embodiments of the present invention.
图16为根据本发明的部分实施方式的微型发光元件的剖面示意图。Fig. 16 is a schematic cross-sectional view of a micro light-emitting element according to some embodiments of the present invention.
图17为根据本发明的部分实施方式的微型发光元件的剖面示意图。Fig. 17 is a schematic cross-sectional view of a micro light-emitting element according to some embodiments of the present invention.
图18为根据本发明的多个实施方式的微型发光元件的反射层的多个峰部与多个谷部的示意图。FIG. 18 is a schematic diagram of a plurality of peaks and a plurality of valleys of a reflective layer of a micro light-emitting device according to various embodiments of the present invention.
其中，附图标记Among them, reference signs
100：方法 524：黏着延伸部100: Method 524: Adhesive Extensions
102～124：步骤 530：发光二极管102～124: Step 530: LED
300：光阻层 530S：侧边300: photoresist layer 530S: side
300’：图案化光阻层 531：第二半导体层300': patterned photoresist layer 531: second semiconductor layer
300P’：峰部 532：主动层300P': peak 532: active layer
300V’：谷部 533：第一半导体层300V': Valley 533: First semiconductor layer
302：表面 534：第一电极302: surface 534: first electrode
310：开口 535：第二电极310: opening 535: second electrode
400：载体基板 540：钝化层400: carrier substrate 540: passivation layer
500：微型发光元件 600：转移头500: micro light-emitting element 600: transfer head
510：反射膜 700：接收基板510: reflective film 700: receiving substrate
512：反射层 800：附着层512: reflective layer 800: adhesion layer
512A：表面 900：显示装置512A: Surface 900: Display device
512P：峰部 FC：支撑部512P: Peak FC: Support
512V：谷部 D1：第一方向512V: valley D1: first direction
514：反射延伸部 DA1：第一距离514: Reflex extension DA1: First distance
514A：表面 DA2：第二距离514A: Surface DA2: Second Distance
520：黏着覆盖物 W1：宽度520: Adhesive cover W1: Width
522：黏着层 W2：宽度522: Adhesive layer W2: Width
522P：峰部 TD：过渡载板装置522P: Peak TD: Transition Carrier Device
522’：图案化黏着层 CA：中央区522': Patterned Adhesive Layer CA: Central Area
522A：底面 PA：周边区522A: Bottom PA: Peripheral Area
522B：顶面 L1：投影长度522B: Top surface L1: Projected length
522S：侧边 G：间隙522S: Side G: Gap
θA:底角θA: Base angle
具体实施方式Detailed ways
以下将以图式揭露本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化附图起见，一些习知惯用的结构与元件在图中将以简单示意的方式为之。A number of embodiments of the present invention will be disclosed in the following figures. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some conventional structures and elements will be shown in a simple schematic way in the drawings.
在附图中，为了清楚起见，放大了各元件等的厚度。在整个说明书中，相同的附图标记表示相同的元件。应当理解，当诸如层、膜、区域或基板的元件被称为在“另一元件上”、或“连接到另一元件”、“重叠于另一元件”时，其可以直接在另一元件上或与另一元件连接，或者中间元件可以也存在。相反，当元件被称为“直接在另一元件上”或“直接连接到”另一元件时，不存在中间元件。如本文所使用的，“连接”可以指物理及/或电连接。In the drawings, the thickness of each element and the like is exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on," "connected to," or "overlapping" another element, it can be directly on the other element. on or connected to another element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection.
应当理解，尽管术语“第一”与“第二”等在本文中可以用于描述各种元件、部件、区域、层及/或部分，但是这些元件、部件、区域、及/或部分不应受这些术语的限制。这些术语仅用于将一个元件、部件、区域、层或部分与另一个元件、部件、区域、层或部分区分开。因此，下面讨论的“第一元件”、“部件”、“区域”、“层”、或“部分”可以被称为第二元件、部件、区域、层或部分而不脱离本文的教导。It should be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or sections should not limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, "a first element," "component," "region," "layer," or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
这里使用的术语仅仅是为了描述特定实施例的目的，而不是限制性的。如本文所使用的，除非内容清楚地指示，否则单数形式“一”、“一个”和“该”旨在包括复数形式，包括“至少一个”。“或”表示“及/或”。如本文所使用的，术语“及/或”包括一个或多个相关所列项目的任何和所有组合。还应当理解，当在本说明书中使用时，术语“包括”及/或“包括”指定所述特征、区域、整体、步骤、操作、元件的存在及/或部件，但不排除一个或多个其它特征、区域整体、步骤、操作、元件、部件及/或其组合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the stated features, regions, integers, steps, operations, the presence of elements and/or parts, but do not exclude one or more Existence or addition of other features, regions as a whole, steps, operations, elements, parts and/or combinations thereof.
此外，诸如“下”或“底部”和“上”或“顶部”的相对术语可在本文中用于描述一个元件与另一元件的关系，如图所示。应当理解，相对术语旨在包括除了图中所示的方位之外的装置的不同方位。例如，如果一个附图中的装置翻转，则被描述为在其他元件的“下”侧的元件将被定向在其他元件的“上”侧。因此，示例性术语“下”可以包括“下”和“上”的取向，取决于附图的特定取向。类似地，如果一个附图中的装置翻转，则被描述为在其它元件“下方”或“下方”的元件将被定向为在其它元件“上方”。因此，示例性术语“下面”或“下面”可以包括上方和下方的取向。Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.
本文使用的“约”或“实质上”包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值，考虑到所讨论的测量和与测量相关的误差的特定数量(即，测量系统的限制)。例如，“约”可以表示在所述值的一个或多个标准偏差内，或±30％、±20％、±10％、±5％内。再者，本文使用的“约”或“实质上”可依光学性质、蚀刻性质或其它性质，来选择较可接受的偏差范围或标准偏差，而可不用一个标准偏差适用全部性质。As used herein, "about" or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the errors associated with the measurements. Specific quantities (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the "about" or "substantially" used herein may select a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and one standard deviation may not be applicable to all properties.
除非另有定义，本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是，诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义，并且将不被解释为理想化的或过度正式的意义，除非本文中明确地这样定义。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.
本文参考作为理想化实施例的示意图的截面图来描述示例性实施例。因此，可以预期到作为例如制造技术及/或公差的结果的图示的形状变化。因此，本文所述的实施例不应被解释为限于如本文所示的区域的特定形状，而是包括例如由制造导致的形状偏差。例如，示出或描述为平坦的区域通常可以具有粗糙及/或非线性特征。此外，所示的锐角可以是圆的。因此，图中所示的区域本质上是示意性的，并且它们的形状不是旨在示出区域的精确形状，并且不是旨在限制权利要求的范围。Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, may, typically, have rough and/or non-linear features. Additionally, acute corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
图1为根据本发明的部分实施方式的制造微型发光元件的方法100的流程图。方法100包含步骤102～124。图2至图13为根据本发明的部分实施方式的制造微型发光元件的方法100于多个阶段的剖面示意图。以下请参考图2 至图13以了解制造微型发光元件的方法100。FIG. 1 is a flowchart of a method 100 for manufacturing a micro light emitting device according to some embodiments of the present invention. The method 100 includes steps 102-124. 2 to 13 are schematic cross-sectional views of various stages of the method 100 for manufacturing micro-light-emitting devices according to some embodiments of the present invention. Please refer to FIG. 2 to FIG. 13 below to understand the method 100 for manufacturing micro-light emitting devices.
首先来到图1的步骤102以及图2。形成光阻层300于载体基板400上。光阻层300的材料可包括正型光阻材料(Positive Photoresist)或负型光阻材料 (NegativePhotoresist)，其可以通过沉积或涂布等方式形成。举例而言，光阻层 300主要成分包括酚甲醛、酚醛树脂或聚亚酰胺。应了解到，以上所举的光阻层300的材质仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择光阻层300的材质。光阻层300的厚度为约2微米至20微米。应了解到，以上所举的光阻层300的厚度仅为例示，并非用以限制本发明，本发明所属技术领域中具有通常知识者，应视实际需要，弹性选择光阻层300的厚度。First come to step 102 of FIG. 1 and FIG. 2 . A photoresist layer 300 is formed on the carrier substrate 400 . The material of the photoresist layer 300 may include positive photoresist or negative photoresist, which may be formed by deposition or coating. For example, the main component of the photoresist layer 300 includes phenol formaldehyde, phenolic resin or polyimide. It should be understood that the material of the photoresist layer 300 mentioned above is only an example, and is not intended to limit the present invention. Those skilled in the art of the present invention should flexibly select the material of the photoresist layer 300 according to actual needs. The thickness of the photoresist layer 300 is about 2 microns to 20 microns. It should be understood that the thickness of the photoresist layer 300 mentioned above is only an example and is not intended to limit the present invention. Those skilled in the art of the present invention should flexibly select the thickness of the photoresist layer 300 according to actual needs.
接着，来到图1的步骤104以及图3。图案化光阻层300，形成开口310 于光阻层300中，其中开口310露出载体基板400的部分内表面，例如：光阻层300覆盖载体基板400的内表面一部分，且光阻层300不覆盖载体基板400 的内表面另一部分；或者是光阻层300与载体基板400的内表面部分接触，且载体基板400的内表面另一部分不与光阻层300接触。于本实施方式中，是藉用曝光显影的方式选择性地移除部分的光阻层300来形成开口310为范例，但不限于此。于其它实施例中，选择性地移除部分的光阻层300可使用激光移除、纳米转(压)印方式等等其它合适的方式来形成开口310。于部分实施方式中，开口310非设置于光阻层300两侧，开口310位于光阻层300中。举例而言，光阻层300可视为两部分3001、3002，而开口310位于光阻层300的两部分 3001、3002之间。Next, come to step 104 in FIG. 1 and FIG. 3 . The photoresist layer 300 is patterned to form an opening 310 in the photoresist layer 300, wherein the opening 310 exposes part of the inner surface of the carrier substrate 400, for example: the photoresist layer 300 covers a part of the inner surface of the carrier substrate 400, and the photoresist layer 300 does not Cover another part of the inner surface of the carrier substrate 400 ; or the photoresist layer 300 is in contact with the inner surface of the carrier substrate 400 , and another part of the inner surface of the carrier substrate 400 is not in contact with the photoresist layer 300 . In this embodiment, it is an example to selectively remove part of the photoresist layer 300 to form the opening 310 by means of exposure and development, but it is not limited thereto. In other embodiments, the selective removal of part of the photoresist layer 300 may use other suitable methods such as laser removal, nano-transfer (imprint) printing, etc. to form the opening 310 . In some implementations, the opening 310 is not disposed on both sides of the photoresist layer 300 , and the opening 310 is located in the photoresist layer 300 . For example, the photoresist layer 300 can be regarded as two parts 3001 , 3002 , and the opening 310 is located between the two parts 3001 , 3002 of the photoresist layer 300 .
来到图1的步骤104以及图4。光阻层300经由图案化的步骤形成图案化光阻层300’。光阻层300图案化的步骤可以通过纳米压印(转)或曝光显影等方式，来形成图案化光阻层300’。举例而言依序包含以下步骤，然仅为示范例，本领域人员可视实际需求调整。首先，软烤光阻层300，其中软烤的温度为约摄氏60度至120度。接着，曝光光阻层300。然后，显影光阻层300，并因此选择性地裸露部分的载体基板400。显影光阻层300后，光阻层300尚未经过硬烤，而处于尚未定型的状态，光阻层300能够经由外力施压而变形。于此，峰部300P’具有三角形剖面，其可以是四角椎或圆锥。应了解到，不应以峰部300P’的形状限制本发明的范围。于其他实施方式中，峰部300P’可为椭圆锥形或其他适当形状。或者，于其他实施方式中，图案化光阻层300’的表面 302可以仅在一维方向有高低变化(详细说明，请参见图18)，峰部300P’与谷部300V’可朝一方向延伸，而于另一方向有高低分布差异，而峰部300P’为具有三角形、半椭圆剖面的柱状等。于其他实施方式中，图案化光阻层300’的峰部300P’与谷部300V’可以同心圆状分布，其中开口310可位于此同心圆的圆心。Come to step 104 of FIG. 1 and FIG. 4 . The photoresist layer 300 is patterned to form a patterned photoresist layer 300'. In the step of patterning the photoresist layer 300, the patterned photoresist layer 300' can be formed by nanoimprinting (transfer) or exposure and development. For example, the following steps are included in sequence, which are only exemplary, and can be adjusted by those skilled in the art according to actual needs. Firstly, the photoresist layer 300 is soft baked, wherein the temperature of the soft bake is about 60°C to 120°C. Next, the photoresist layer 300 is exposed. Then, the photoresist layer 300 is developed, thereby selectively exposing portions of the carrier substrate 400 . After developing the photoresist layer 300 , the photoresist layer 300 has not been hard-baked and is in an unshaped state, and the photoresist layer 300 can be deformed by external pressure. Here, the peak portion 300P' has a triangular cross-section, which may be a quadrangular pyramid or a cone. It should be understood that the scope of the invention should not be limited by the shape of peak 300P'. In other embodiments, the peak 300P' may be in the shape of an elliptical cone or other suitable shapes. Alternatively, in other implementations, the surface 302 of the patterned photoresist layer 300' may only have height variations in one dimension (for details, please refer to FIG. 18 ), and the peaks 300P' and valleys 300V' may extend in one direction. , and there is a difference in height distribution in the other direction, and the peak 300P' is a columnar shape with a triangular or semi-elliptical cross-section. In other embodiments, the peaks 300P' and valleys 300V' of the patterned photoresist layer 300' may be distributed in concentric circles, and the opening 310 may be located at the center of the concentric circles.
应了解到，图案化光阻层300’的峰部300P’与谷部300V’的位置分布、深度、形状可以视实际情况而调整，不应以此限制本发明的范围。It should be understood that the position distribution, depth, and shape of the peaks 300P' and valleys 300V' of the patterned photoresist layer 300' can be adjusted according to actual conditions, which should not limit the scope of the present invention.
以纳米压印为例，光阻层300处于能够经由外力施压而变形的状态，因此能藉由纳米压印步骤，使图案化光阻层300’具有峰部300P’与多个谷部300V’，以使表面302呈现呈高低起伏的表面。以曝光显影为例，可以适当的曝光深度，以使上半部分的光阻层300经曝光而图案化，以使表面302呈现呈高低起伏的表面。在纳米压印或曝光显影后，可以硬烤图案化光阻层300’，使图案化光阻层300’硬化，其中硬烤的温度为约摄氏120度至220度。硬烤后，理想上，光阻层300不因外力施压而变形。于部分实施例中，曝光显影方式来形成开口310与图案化光阻层300’具有峰部300P’与多个谷部300V’可一起形成，不计算软烤及/或硬烤步骤。于另一部分实施例中，纳米压印(转)方式来形成开口 310与图案化光阻层300’具有峰部300P’与多个谷部300V’可一起形成，不计算软烤及/或硬烤步骤。Taking nanoimprinting as an example, the photoresist layer 300 is in a state capable of being deformed by external pressure. Therefore, the patterned photoresist layer 300' can have peaks 300P' and a plurality of valleys 300V through the nanoimprinting step. ', so that the surface 302 presents a surface with ups and downs. Taking exposure and development as an example, an appropriate exposure depth can be used so that the upper half of the photoresist layer 300 is exposed and patterned, so that the surface 302 presents a surface with ups and downs. After nanoimprinting or exposure development, the patterned photoresist layer 300' can be hard baked to harden the patterned photoresist layer 300', wherein the temperature of the hard bake is about 120°C to 220°C. After hard-baking, ideally, the photoresist layer 300 will not be deformed due to external pressure. In some embodiments, the opening 310 is formed by exposure and development, and the patterned photoresist layer 300' having peaks 300P' and a plurality of valleys 300V' can be formed together, excluding the soft-baking and/or hard-baking steps. In another part of the embodiment, the nanoimprint (transfer) method is used to form the opening 310 and the patterned photoresist layer 300' having peaks 300P' and a plurality of valleys 300V' can be formed together, excluding soft baking and/or hard bake step.
接着，来到图1的步骤108以及图5。形成反射膜510于图案化光阻层300’上，其中反射膜510共形地设置于图案化光阻层300’上。Next, come to step 108 in FIG. 1 and FIG. 5 . A reflective film 510 is formed on the patterned photoresist layer 300', wherein the reflective film 510 is conformally disposed on the patterned photoresist layer 300'.
于此，反射膜510具有反射层512以及反射延伸部514。反射层512沿图案化光阻层300’的表面302设置，而具有高低起伏的表面512A。具体而言，反射层512的表面512A具有多个峰部512P与多个谷部512V，而使反射层512 的表面512A呈高低起伏，且反射层512的峰部512P与谷部512V分别对应设置于图案化光阻层300’的峰部300P’与谷部300V’上。Here, the reflective film 510 has a reflective layer 512 and a reflective extension 514 . The reflective layer 512 is disposed along the surface 302 of the patterned photoresist layer 300', and has a surface 512A with ups and downs. Specifically, the surface 512A of the reflective layer 512 has a plurality of peaks 512P and a plurality of valleys 512V, so that the surface 512A of the reflective layer 512 is undulating, and the peaks 512P and valleys 512V of the reflective layer 512 are respectively arranged correspondingly. On the peak portion 300P′ and the valley portion 300V′ of the patterned photoresist layer 300 ′.
于本发明的部分实施方式中，反射膜510的反射延伸部514设置于图案化光阻层300’的开口310中。于部分实施方式中，反射膜510的反射延伸部514 具有表面514A，用以连接或直接接触载体基板400的内表面，例如：光阻层 300不覆盖载体基板400的内表面或者是光阻层300不接触的载体基板400的内表面。In some embodiments of the present invention, the reflective extension 514 of the reflective film 510 is disposed in the opening 310 of the patterned photoresist layer 300'. In some embodiments, the reflective extension 514 of the reflective film 510 has a surface 514A for connecting or directly contacting the inner surface of the carrier substrate 400, for example: the photoresist layer 300 does not cover the inner surface of the carrier substrate 400 or is a photoresist layer 300 does not contact the inner surface of the carrier substrate 400 .
于本发明的部分实施方式中，反射膜510的材料可以选择反射率大于80％的材料，且可为单层或多层结构。于部分实施方式中，金属、合金、金属盐类、合金盐类或前述两种以上的组合。举例而言，反射膜510的材料可为金、银、铜、铝或其组合。反射膜510可以通过沉积等方式而形成。反射膜510的厚度，例如：大约为0.05微米(um)至3微米(um)，但不限于此。于其他实施方式中，反射膜510也可以选择采用透明但折射率相对图案化黏着层522’小的材料(将于后续段落说明)，以达到全反射的效果。举例而言，反射膜510的折射率为约1.2至约1.6。In some embodiments of the present invention, the reflective film 510 can be made of a material with a reflectivity greater than 80%, and can be a single-layer or multi-layer structure. In some embodiments, metals, alloys, metal salts, alloy salts, or a combination of two or more of the foregoing. For example, the material of the reflective film 510 can be gold, silver, copper, aluminum or a combination thereof. The reflective film 510 may be formed by deposition or the like. The thickness of the reflective film 510 is, for example, approximately 0.05 micrometers (um) to 3 micrometers (um), but is not limited thereto. In other implementations, the reflective film 510 may also be made of a material that is transparent but has a lower refractive index than the patterned adhesive layer 522' (to be described in subsequent paragraphs), so as to achieve the effect of total reflection. For example, the refractive index of the reflective film 510 is about 1.2 to about 1.6.
来到图1的步骤110以及图6。形成黏着覆盖物520于反射膜510上。于此，黏着覆盖物520可以经加热(例如：软烤)而具有适当黏性。举例而言，黏着覆盖物520可为单层或多层结构，且其可以采用具黏性的有机材料，如光阻、苯并环丁烯(Benzocyclobutene；BCB)、等其他合适材料。于部分实施例中，黏着覆盖物520的折射率，例如：在大约1.2至2的范围内。Come to step 110 of FIG. 1 and FIG. 6 . An adhesive cover 520 is formed on the reflective film 510 . Here, the adhesive cover 520 can be heated (eg, soft-baked) to have proper viscosity. For example, the adhesive cover 520 can be a single-layer or multi-layer structure, and it can use adhesive organic materials, such as photoresist, benzocyclobutene (Benzocyclobutene; BCB), and other suitable materials. In some embodiments, the refractive index of the adhesive cover 520 is, for example, in a range of about 1.2-2.
于本实施方式中，黏着覆盖物520具有黏着层522以及黏着延伸部524。黏着层522具有相对的底面522A与顶面522B。黏着层522的底面522A，例如：呈高低起伏状。黏着层522的底面522A具有多个峰部522P，分别对应反射层512的谷部512V。黏着层522的顶面522B，例如：可为平坦状或实质上平坦状。黏着延伸部524填入图案化光阻层300’的开口310中。举例而言，反射膜510的反射延伸部514设置于图案化光阻层300’的开口310中，则黏着延伸部524所填入的开口310的侧边为反射延伸部514所构成，因此，也可称为黏着延伸部524填入反射膜510的反射延伸部514设置于图案化光阻层300’的开口310中。于本实施方式中反射延伸部514以及黏着延伸部524填入开口 310合称为支撑部FC。In this embodiment, the adhesive cover 520 has an adhesive layer 522 and an adhesive extension 524 . The adhesive layer 522 has a bottom surface 522A and a top surface 522B opposite to each other. The bottom surface 522A of the adhesive layer 522 is, for example, undulating. The bottom surface 522A of the adhesive layer 522 has a plurality of peaks 522P corresponding to the valleys 512V of the reflective layer 512 . For example, the top surface 522B of the adhesive layer 522 may be flat or substantially flat. The adhesive extension 524 is filled into the opening 310 of the patterned photoresist layer 300'. For example, the reflective extension 514 of the reflective film 510 is disposed in the opening 310 of the patterned photoresist layer 300 ′, and the side of the opening 310 where the adhesive extension 524 is filled is formed by the reflective extension 514 . Therefore, The reflective extension 514 , which can also be referred to as the adhesive extension 524 filled into the reflective film 510 , is disposed in the opening 310 of the patterned photoresist layer 300 ′. In this embodiment, the reflective extension 514 and the adhesive extension 524 filling the opening 310 are collectively referred to as the supporting portion FC.
来到图1的步骤112以及图7。将发光二极管530从生长基板(图未示)，转置于黏着层522的顶面522B上。于此，将发光二极管530设置于支撑部FC 的正上方。发光二极管530与支撑部FC于垂直投影于载体基板400的方向上重叠。Come to step 112 of FIG. 1 and FIG. 7 . The LED 530 is transferred from the growth substrate (not shown in the figure) onto the top surface 522B of the adhesive layer 522 . Here, the LED 530 is disposed directly above the support portion FC. The light emitting diode 530 overlaps with the support portion FC in a direction vertically projected on the carrier substrate 400 .
其中，发光二极管530为微型发光二极管(micro light emitting diode)。于本发明的多个实施方式中，微型发光二极管尺寸较佳介于约10平方微米至约 10000平方微米之间，微型发光二极管边长限制为约100微米(μm)以下。实务上，微型发光二极管是用以作为显示面板的像素。本发明所属技术领域中具有通常知识者，可以依据显示面板的像素尺寸需求调整微型发光二极管的尺寸。Wherein, the light emitting diode 530 is a micro light emitting diode (micro light emitting diode). In various embodiments of the present invention, the size of the micro-LEDs is preferably between about 10 square micrometers and about 10,000 square micrometers, and the side length of the micro-LEDs is limited to less than about 100 micrometers (μm). In practice, micro-LEDs are used as pixels of a display panel. Those skilled in the art to which the present invention pertains can adjust the size of the micro LEDs according to the pixel size requirements of the display panel.
于部分实施方式中，发光二极管530至少包含第一半导体层533与第二半导体层531、第一电极534以及第二电极535。于此，第二半导体层531与第一半导体层533部分重叠，第一电极534连接第二半导体层531，第二电极535 连接第一半导体层533。于另一实施例，发光二极管530更包括主动层532，其中主动层532设置于第二半导体层531与第一半导体层533之间。于一实施例中，第一半导体层533例如：可为P型半导体，第二半导体层531例如：可为N型半导体，而主动层532例如：可为多量子井(multiple quantum well；MQW) 及/或单(single quantum well；SQW)。其中，第一半导体层533与第二半导体层531为极性相反的半导体层。In some embodiments, the light emitting diode 530 at least includes a first semiconductor layer 533 and a second semiconductor layer 531 , a first electrode 534 and a second electrode 535 . Here, the second semiconductor layer 531 partially overlaps the first semiconductor layer 533 , the first electrode 534 is connected to the second semiconductor layer 531 , and the second electrode 535 is connected to the first semiconductor layer 533 . In another embodiment, the light emitting diode 530 further includes an active layer 532 , wherein the active layer 532 is disposed between the second semiconductor layer 531 and the first semiconductor layer 533 . In one embodiment, the first semiconductor layer 533 can be, for example, a P-type semiconductor, the second semiconductor layer 531 can be, for example, an N-type semiconductor, and the active layer 532 can be, for example, a multiple quantum well (multiple quantum well; MQW) And/or single (single quantum well; SQW). Wherein, the first semiconductor layer 533 and the second semiconductor layer 531 are semiconductor layers with opposite polarities.
然而，应了解到，以上所举的半导体层类型仅为例示，而非用以限制本发明，本发明所属技术领域中具有通常知识者，可依实际需要，弹性选择第一半导体层533以及第二半导体层531的类型。此外，本发明所属技术领域中具有通常知识者，可以额外设置P+或是N+类型的半导体层，以增加发光二极管 530电极第一534、第二电极535的欧姆接触。其中，额外设置P+或是N+类型的半导体层的掺杂浓度大于第一半导体层533与第二半导体层531的掺杂浓度。However, it should be understood that the types of semiconductor layers mentioned above are only examples and are not intended to limit the present invention. Those with ordinary knowledge in the technical field of the present invention can flexibly select the first semiconductor layer 533 and the second semiconductor layer according to actual needs. The type of the second semiconductor layer 531 . In addition, those skilled in the art of the present invention can additionally provide a P+ or N+ type semiconductor layer to increase the ohmic contact between the first electrode 534 and the second electrode 535 of the LED 530 . Wherein, the doping concentration of the additional P+ or N+ type semiconductor layer is higher than the doping concentration of the first semiconductor layer 533 and the second semiconductor layer 531 .
于本实施方式中，以水平型微型发光二极管为例，其中阴极与阳极(例如：第一电极534以及第二电极535)位于发光二极管530面向载体基板400的另一侧上，本发明并不以此为限。于其他实施方式中，发光二极管530可为但不限于垂直型微型发光二极管或水平型微型发光二极管，其中垂直型微型发光二极管阴极与阳极位于微型发光二极管的上下两侧，例如：第一电极534以及第二电极535其中的一位于发光二极管530与载体基板400之间，第一电极534 以及第二电极535其中另一位于发光二极管530面向载体基板400的另一侧上。In this embodiment, a horizontal micro light emitting diode is taken as an example, wherein the cathode and anode (for example: the first electrode 534 and the second electrode 535) are located on the other side of the light emitting diode 530 facing the carrier substrate 400, the present invention does not This is the limit. In other embodiments, the light emitting diode 530 can be but not limited to a vertical micro light emitting diode or a horizontal micro light emitting diode, wherein the cathode and anode of the vertical micro light emitting diode are located on the upper and lower sides of the micro light emitting diode, for example: the first electrode 534 And one of the second electrodes 535 is located between the LED 530 and the carrier substrate 400 , and the other of the first electrode 534 and the second electrode 535 is located on the other side of the LED 530 facing the carrier substrate 400 .
来到图1的步骤114以及图8。将黏着层522图案化，形成图案化黏着层 522’，并保留黏着延伸部524。举例而言，图案化黏着层522’会覆盖黏着延伸部524与邻近于黏着延伸部524附近的部分反射膜510与部分图案化光阻层 300’。如此一来，各个发光二极管530可分别对应一个图案化黏着层522’以及一个黏着延伸部524。于其他实施方式中，各个发光二极管530可分别对应至少一个图案化黏着层522’以及至少一个黏着延伸部524。于此，可以使用黄光微影搭配干蚀刻技术，例如感应耦合等离子体Induced coupled plasma(ICP)，来进行此图案化黏着覆盖物520的步骤。在黏着层522图案化步骤后，可以进行硬烤，而使黏着覆盖物520定型。Come to step 114 of FIG. 1 and FIG. 8 . The adhesive layer 522 is patterned to form a patterned adhesive layer 522', and the adhesive extension 524 remains. For example, the patterned adhesive layer 522' covers the adhesive extension 524 and the partial reflective film 510 and part of the patterned photoresist layer 300' adjacent to the adhesive extension 524. In this way, each LED 530 can correspond to a patterned adhesive layer 522' and an adhesive extension 524 respectively. In other embodiments, each LED 530 may correspond to at least one patterned adhesive layer 522' and at least one adhesive extension 524, respectively. Here, the step of patterning the adhesive cover 520 can be performed by using yellow light lithography combined with dry etching technology, such as Induced Coupled Plasma (ICP). After the step of patterning the adhesive layer 522 , a hard bake may be performed to finalize the adhesive cover 520 .
应了解到，于部分实施方式中，步骤114可以在步骤112前进行，换句话说，在设置发光二极管530前，即可将黏着层522进行图案化步骤，再将发光二极管530设置于图案化黏着层522’上。如此一来，不需要在发光二极管530 设置后再进行黏着层522图案化步骤。其中，图案化步骤可为显影步骤、激光移除步骤、转印步骤或其它合适的步骤。It should be understood that, in some embodiments, step 114 can be performed before step 112. In other words, before disposing the light emitting diode 530, the adhesive layer 522 can be patterned, and then the light emitting diode 530 can be disposed on the patterning step. on the adhesive layer 522'. In this way, the step of patterning the adhesive layer 522 does not need to be performed after the LED 530 is disposed. Wherein, the patterning step may be a developing step, a laser removal step, a transfer printing step or other suitable steps.
来到图1的步骤116以及图9。覆盖钝化层540于发光二极管530上，且延伸覆盖发光二极管530的侧边530S与图案化黏着层522’的侧边522S。于部分实施方式中，钝化层540接触且连接反射膜510。于部分实施方式中，钝化层540可为单层结构或多层结材构，且其材料，较佳地，可以是无机材料，例如：氧化硅、氮化硅、氮氧化硅或其他适当的材料。于部分实施方式中，单层结构或多层结材构的钝化层540材料也可为有机材料，例如：光阻、丙烯酸类、聚酰亚胺、聚甲基丙烯酸甲酯(Poly(methyl methacrylate)；PMMA)、或其它合适的材料，或有机材料与无机材料堆叠结构。Come to step 116 of FIG. 1 and FIG. 9 . The covering passivation layer 540 is on the LED 530, and extends to cover the side 530S of the LED 530 and the side 522S of the patterned adhesive layer 522'. In some implementations, the passivation layer 540 is in contact with and connected to the reflective film 510 . In some embodiments, the passivation layer 540 can be a single-layer structure or a multi-layer structure, and its material, preferably, can be an inorganic material, such as: silicon oxide, silicon nitride, silicon oxynitride or other suitable s material. In some embodiments, the material of the passivation layer 540 of a single-layer structure or a multi-layer structure can also be an organic material, such as: photoresist, acrylic, polyimide, polymethyl methacrylate (Poly(methyl methacrylate); PMMA), or other suitable materials, or a stacked structure of organic materials and inorganic materials.
来到图1的步骤118以及图10。图案化钝化层540，以移除至少部分的钝化层540，例如：形成开孔(未标示)，以使发光二极管530的第一电极534以及第二电极535露出。换言之，第一电极534一部分以及第二电极535一部分未被钝化层540所覆盖或接触。Come to step 118 of FIG. 1 and FIG. 10 . The passivation layer 540 is patterned to remove at least part of the passivation layer 540 , for example, openings (not shown) are formed to expose the first electrode 534 and the second electrode 535 of the LED 530 . In other words, a part of the first electrode 534 and a part of the second electrode 535 are not covered or contacted by the passivation layer 540 .
于此，可以使用黄光微影搭配干蚀刻，例如感应耦合等离子体Induced coupledplasma(ICP)来进行此图案化步骤。在蚀刻钝化层540时，蚀刻剂，例如：可为四氟化碳(CF4、六氟化硫(SF6)或三氟甲烷(CHF3)，但不限于此。Here, yellow light lithography combined with dry etching, such as Induced Coupled Plasma (ICP), can be used to perform the patterning step. When etching the passivation layer 540, the etchant may be, for example, carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) or trifluoromethane (CHF3), but not limited thereto.
其后，可以移除部分的反射膜510。举例而言，可以通过钝化层540保护发光二极管530以及部分反射层512，而对未受到钝化层540保护部分的反射层512进行蚀刻。换言之，钝化层540下方的发光二极管530与部分反射层 512(或称为未被暴露的反射层512)相较于钝化层540外的另一部分反射层 512(或称为被暴露的反射层512)被蚀刻机率较小。在蚀刻反射膜510时，可以使用黄光微影搭配干蚀刻，例如感应耦合等离子体Induced coupledplasma(ICP)，蚀刻剂，例如：可为氯(Cl2)或三氯化硼(BCl3)，但不限于此。于此，图案化光阻层300’以及钝化层540可以抵抗此蚀刻剂。具体而言当反射膜 510为金属材料时，此蚀刻剂对于反射膜510的蚀刻速率大于此蚀刻剂对于图案化光阻层300’的蚀刻速率。如此一来，在蚀刻反射膜510过程中，图案化光阻层300’也能保护反射延伸部514。Thereafter, part of the reflective film 510 may be removed. For example, the light emitting diode 530 and part of the reflective layer 512 can be protected by the passivation layer 540 , and the part of the reflective layer 512 not protected by the passivation layer 540 can be etched. In other words, the LED 530 and the partial reflective layer 512 (or called the unexposed reflective layer 512 ) under the passivation layer 540 are compared with the other part of the reflective layer 512 (or called the exposed reflective layer 512 ) outside the passivation layer 540 . layer 512) is less likely to be etched. When etching the reflective film 510, yellow light lithography can be used with dry etching, such as Induced coupled plasma (ICP), etchant, such as chlorine (Cl2) or boron trichloride (BCl3), but not limited thereto . Here, the patterned photoresist layer 300' and the passivation layer 540 can resist the etchant. Specifically, when the reflective film 510 is a metal material, the etching rate of the etchant for the reflective film 510 is greater than the etching rate of the etchant for the patterned photoresist layer 300'. In this way, during the process of etching the reflective film 510, the patterned photoresist layer 300' can also protect the reflective extension 514.
至此，本实施方式可以提供一种过渡载板装置TD。此过渡载板装置TD 包含载体基板400、微型发光元件500以及图案化光阻层300’。微型发光元件 500包含图案化黏着层522’、发光二极管530、反射层512、支撑部FC以及钝化层540。微型发光元件500设置于载体基板400上，图案化光阻层300’设置于载体基板400与微型发光元件500之间，其中图案化光阻层300’具有多个峰部300P’与多个谷部300V’，其中微型发光元件500内的反射层512的峰部512P 与谷部512V分别对应设置于图案化光阻层300’的峰部300P’与谷部300V’上。So far, this embodiment can provide a transition carrier device TD. The transitional carrier device TD includes a carrier substrate 400, a micro light emitting device 500 and a patterned photoresist layer 300'. The miniature light emitting device 500 includes a patterned adhesive layer 522', a light emitting diode 530, a reflective layer 512, a support portion FC and a passivation layer 540. The micro light emitting element 500 is disposed on the carrier substrate 400, and the patterned photoresist layer 300' is disposed between the carrier substrate 400 and the micro light emitting element 500, wherein the patterned photoresist layer 300' has a plurality of peaks 300P' and a plurality of valleys portion 300V', wherein the peak portion 512P and the valley portion 512V of the reflective layer 512 in the micro light-emitting element 500 are respectively disposed on the peak portion 300P' and the valley portion 300V' of the patterned photoresist layer 300'.
于本发明的部分实施方式中，微型发光元件500的支撑部FC往载体基板 400的内表面延伸。图案化光阻层300’具有开口310，且微型发光元件500的支撑部FC通过开口310连接载体基板400。于部分实施方式中，支撑部FC 与载体基板400直接接触。于其他部分实施方式中，微型发光元件50可以包含多个支撑部FC。In some embodiments of the present invention, the support portion FC of the micro light emitting device 500 extends toward the inner surface of the carrier substrate 400 . The patterned photoresist layer 300' has an opening 310, and the support portion FC of the micro light emitting element 500 is connected to the carrier substrate 400 through the opening 310. In some embodiments, the support portion FC is in direct contact with the carrier substrate 400 . In other partial implementations, the micro light emitting device 50 may include a plurality of support portions FC.
来到图1的步骤120以及图11。将图案化光阻层300’(参考图10)移除。于此，可以藉由干蚀刻，如反应式离子蚀刻(reactive ion etch；RIE)或其它合适的蚀刻方式来进行此图案化工艺。举例而言，可以藉由能去除有机残余物的气体反应，例如氧等离子体灰化工艺(oxygen plasma ashing)，来移除图案化光阻层300’，而使发光二极管530仅通过支撑部FC固定于载体基板400上。换句话说，除了支撑部FC之外，载体基板400与反射层512之间具有间隙G。在移除图案化光阻层300’的过程中，钝化层540以及反射膜510可以保护微型发光元件500的其他层体，免受到此移除过程的伤害。Come to step 120 of FIG. 1 and FIG. 11 . The patterned photoresist layer 300' (refer to FIG. 10 ) is removed. Here, the patterning process can be performed by dry etching, such as reactive ion etching (RIE) or other suitable etching methods. For example, the patterned photoresist layer 300 ′ can be removed by a gas reaction capable of removing organic residues, such as oxygen plasma ashing, so that the light emitting diode 530 only passes through the support portion FC fixed on the carrier substrate 400 . In other words, there is a gap G between the carrier substrate 400 and the reflective layer 512 except for the support portion FC. During the process of removing the patterned photoresist layer 300', the passivation layer 540 and the reflective film 510 can protect other layers of the micro light emitting device 500 from being damaged by the removal process.
如此一来，即在载体基板400上形成微型发光元件500。微型发光元件500 包含图案化黏着层522’、发光二极管530、反射层512、支撑部FC以及钝化层540，其中微型发光元件500仅以其支撑部FC连接于载体基板400，有利于后续工艺中吸取微型发光元件500脱离载体基板400。In this way, the micro light emitting elements 500 are formed on the carrier substrate 400 . The micro light-emitting element 500 includes a patterned adhesive layer 522', a light-emitting diode 530, a reflective layer 512, a support portion FC, and a passivation layer 540, wherein the micro light-emitting element 500 is only connected to the carrier substrate 400 by its support portion FC, which facilitates subsequent processes. The micro light-emitting element 500 is sucked out of the carrier substrate 400 .
在此详细说明微型发光元件500的结构。于本实施方式中，图案化黏着层 522’具有相对的底面522A与顶面522B，其中，底面522A与顶面522B的相应设置可参阅前述，于此不再赘言。发光二极管530设置于黏着层522的顶面 522B。反射层512设置于黏着层的底面522A。于此，发光二极管530与反射层512电性隔绝。反射层512具有多个峰部512P与多个谷部512V以具有高低起伏的表面512A。反射层512的峰部512P比谷部512V更靠近发光二极管530，其中，反射层512的峰部512P以及谷部512V与图案化黏着层的底面522A 的相应设置可参阅前述，于此不再赘言。The structure of the micro light emitting element 500 will be described in detail here. In this embodiment, the patterned adhesive layer 522' has a bottom surface 522A and a top surface 522B opposite to each other, wherein the corresponding settings of the bottom surface 522A and the top surface 522B can be referred to above, and will not be repeated here. The LED 530 is disposed on the top surface 522B of the adhesive layer 522 . The reflective layer 512 is disposed on the bottom surface 522A of the adhesive layer. Here, the LED 530 is electrically isolated from the reflective layer 512 . The reflective layer 512 has a plurality of peaks 512P and a plurality of valleys 512V to have a surface 512A with ups and downs. The peaks 512P of the reflective layer 512 are closer to the light-emitting diodes 530 than the valleys 512V, wherein the corresponding settings of the peaks 512P and the valleys 512V of the reflective layer 512 and the bottom surface 522A of the patterned adhesive layer can be referred to above, and will not be repeated here. .
于本发明的多个实施方式中，如同峰部300P’的形状及/或峰部512P立体图，例如：可以是四角锥、圆锥或其他适当形状。于此，峰部512P具有三角形剖面(可参阅图10或图11)，峰部512P的三角形底角θA有各种适当的角度，例如约50至60度，以达到更好的光线效果。以具有三角形剖面的三角圆锥为例，可以得到下列表一的实验数据：In various embodiments of the present invention, like the shape of the peak 300P' and/or the perspective view of the peak 512P, for example, it can be a quadrangular pyramid, a cone or other suitable shapes. Here, the peak portion 512P has a triangular cross-section (see FIG. 10 or FIG. 11 ), and the triangle base angle θA of the peak portion 512P has various appropriate angles, such as about 50 to 60 degrees, to achieve better light effects. Taking a triangular cone with a triangular section as an example, the experimental data in Table 1 below can be obtained:
以上表格中，「底角θA为0度」表示图案化光阻300’没有设置峰部300P’及/或图案化黏着层522’没有设置峰部522P的情况。当图案化光阻300’设计峰部300P’及/或图案化黏着层522’设置峰部522P的底角θA为50至60度时，可以获得亮度增益且相较于图案化光阻300’未设置峰部300P’及/或图案化黏着层522’设置峰部522P(底角θA为0度)而言更好的出光效果。其中，当图案化光阻300’设计峰部300P’及/或图案化黏着层522’设置峰部522P的底角θA 约为55度时，能获得较佳的出光效率与正视亮度增益。若以图10为例来说明，图案化光阻300’的峰部300P’剖面的最顶端夹角作为顶角，峰部300P’剖面的最底端夹角作为底角θA。若以图11为例来说明，图案化黏着层522’的峰部 522P剖面的最顶端(例如：较接近发光二极管530)夹角作为顶角，峰部522P 剖面的最底端(例如：较远离发光二极管530)夹角，可视为二相邻谷部512V 连线与峰部522P剖面侧边的夹角作为底角θA。In the above table, "the base angle θA is 0 degrees" means that the patterned photoresist 300' has no peaks 300P' and/or the patterned adhesive layer 522' has no peaks 522P. When the patterned photoresist 300' design peaks 300P' and/or the patterned adhesive layer 522' sets the bottom angle θA of the peaks 522P to be 50 to 60 degrees, a brightness gain can be obtained and compared with the patterned photoresist 300' The light emitting effect is better when the peak portion 300P′ is not provided and/or the patterned adhesive layer 522 ′ is provided with the peak portion 522P (the bottom angle θA is 0 degree). Wherein, when the peak 300P' of the patterned photoresist 300' and/or the bottom angle θA of the peak 522P of the patterned adhesive layer 522' is about 55 degrees, better light extraction efficiency and front-view brightness gain can be obtained. Taking FIG. 10 as an example, the angle at the top of the section of the peak 300P' of the patterned photoresist 300' is taken as the apex angle, and the angle at the bottom of the section of the peak 300P' is taken as the bottom angle θA. If Fig. 11 is taken as an example to illustrate, the angle included at the top of the section of the peak 522P of the patterned adhesive layer 522' (for example: closer to the light emitting diode 530) is used as the apex angle, and the bottom of the section of the peak 522P (for example: closer The included angle away from the light-emitting diode 530) can be regarded as the included angle between the line connecting two adjacent valleys 512V and the side of the peak 522P section as the base angle θA.
在本实施方式中，支撑部FC自反射层512朝远离发光二极管530的方向突出，其中支撑部FC的材料包含反射层512与图案化黏着层522’其中至少一者的材料。于本实施方式中，支撑部FC包含反射延伸部514以及黏着延伸部 524，黏着延伸部524自图案化黏着层522’朝远离发光二极管530的方向突出，例如：图案化黏着层522’朝远离发光二极管530底面(可视为远离图案化黏着层522’顶面522B)的方向突出，其中黏着延伸部524设置于反射延伸部514与图案化黏着层522’之间。于其他实施方式中，支撑部FC可以仅包含反射延伸部514。或者，支撑部FC可以仅包含黏着延伸部524。In this embodiment, the supporting portion FC protrudes from the reflective layer 512 toward a direction away from the LED 530, wherein the material of the supporting portion FC includes at least one of the material of the reflective layer 512 and the patterned adhesive layer 522'. In this embodiment, the support portion FC includes a reflective extension portion 514 and an adhesive extension portion 524. The adhesive extension portion 524 protrudes from the patterned adhesive layer 522' in a direction away from the LED 530, for example: the patterned adhesive layer 522' moves away from the light emitting diode 530. The bottom surface of the LED 530 protrudes in a direction away from the top surface 522B of the patterned adhesive layer 522 ′, wherein the adhesive extension 524 is disposed between the reflective extension 514 and the patterned adhesive layer 522 ′. In other embodiments, the support portion FC may only include the reflective extension portion 514 . Alternatively, the support portion FC may only include the adhesive extension 524 .
于部分实施方式中，钝化层540设置于发光二极管530的侧边530S，且延伸覆盖图案化黏着层522’的侧边522S。于部分实施方式中，钝化层540更延伸至反射膜510的反射层512，而使钝化层540与反射膜510几乎将发光二极管530以及图案化黏着层522’完全包覆起来，可较为增加对于环境的抵抗能力。In some embodiments, the passivation layer 540 is disposed on the side 530S of the LED 530 and extends to cover the side 522S of the patterned adhesive layer 522'. In some embodiments, the passivation layer 540 extends to the reflective layer 512 of the reflective film 510, so that the passivation layer 540 and the reflective film 510 almost completely cover the light emitting diode 530 and the patterned adhesive layer 522', which can be compared Increase resistance to the environment.
于本实施方式中，支撑部FC位于发光二极管530的正下方，而可以最大化地利用载体基板400上的空间。本发明的部分实施方式中，支撑部FC于第一方向D1具有宽度W1，发光二极管530于第一方向D1具有宽度W2，支撑部FC的宽度W1小于发光二极管530的宽度W2。藉此，微型发光元件500 与载体基板400的接触面积(即表面514A的面积)小于微型发光元件500于载体基板400的投影面积。如此一来，支撑部FC可以提供固定微型发光元件500 的功效，并能在后续转移步骤中，使微型发光元件500可较轻易地从载体基板 400上离开。于部分实施方式中，可以设计宽度W1与宽度W2的比例为1： 10，以较佳地达到固定与易于分离的效果，但不限于此。In this embodiment, the support portion FC is located directly below the LED 530 , so that the space on the carrier substrate 400 can be utilized to the maximum. In some embodiments of the present invention, the support portion FC has a width W1 in the first direction D1, the LED 530 has a width W2 in the first direction D1, and the width W1 of the support portion FC is smaller than the width W2 of the LED 530 . Thus, the contact area between the micro light emitting device 500 and the carrier substrate 400 (ie, the area of the surface 514A) is smaller than the projected area of the micro light emitting device 500 on the carrier substrate 400 . In this way, the supporting part FC can provide the function of fixing the micro light emitting device 500, and make it easier to separate the micro light emitting device 500 from the carrier substrate 400 in the subsequent transfer step. In some embodiments, the ratio of the width W1 to the width W2 can be designed to be 1:10, so as to better achieve the effects of fixing and easy separation, but it is not limited thereto.
如前所述，反射层512可以选择反射率大于80％的材料。或者，于其他实施方式中，反射层512可以选择能够在反射膜510与图案化黏着层522’的界面提供全反射效果的透明材料或实质上透明材料。依据斯乃尔定律(Snell’s law)： n1sinθ1＝n2sinθ2，n1为反射层512的折射率，n2为黏着层522的折射率。为了满足全反射条件，设计θ1为90度，且n1sinθ1≦n2sinθ2，而θ2为入射角以及欲反射的角度。如此一来，即可得到n1/n2≦sinθ2。参考以上表一，在一实施例中，假设微结构(例如：图案化光阻300’的峰部300P’剖面)的底角θA约为55度，在光线从发光二极管530发出垂直向下前往反射层时，在反射膜510 与图案化黏着层522’的界面的入射角θ2＝55度，即入射角θ2等于底角θA。在一实施例中，当折射率n2＝1.2时，则可得到n1≦0.98(仅推算)。在另一实施例中，当折射率n2＝2时，则可得到n1≦1.64。或者，在另一实施方式中，假设在反射膜510与图案化黏着层522’的界面的入射角θ2＝55度，当n1的范围为1.2至1.6时，此时n2应大于1.46至1.95的范围。换句话说，当反射层512邻接空气时，反射膜510可以是任意适当材料且具有与图案化黏着层522’搭配的折射率，而不限于金属或合金材料。As mentioned above, the reflective layer 512 can be selected from a material with a reflectivity greater than 80%. Alternatively, in other embodiments, the reflective layer 512 can be selected from a transparent material or a substantially transparent material that can provide a total reflection effect at the interface between the reflective film 510 and the patterned adhesive layer 522'. According to Snell's law: n1sinθ1=n2sinθ2, n1 is the refractive index of the reflective layer 512 , and n2 is the refractive index of the adhesive layer 522 . In order to meet the total reflection condition, design θ1 to be 90 degrees, and n1sinθ1≦n2sinθ2, and θ2 is the incident angle and the angle to be reflected. In this way, n1/n2≦sinθ2 can be obtained. Referring to the above Table 1, in one embodiment, assuming that the base angle θA of the microstructure (for example: the profile of the peak portion 300P' of the patterned photoresist 300') is about 55 degrees, when light is emitted from the light emitting diode 530 and goes vertically downward For the reflective layer, the incident angle θ2 at the interface between the reflective film 510 and the patterned adhesive layer 522 ′ is 55 degrees, that is, the incident angle θ2 is equal to the base angle θA. In one embodiment, when the refractive index n2=1.2, n1≦0.98 (only estimated). In another embodiment, when the refractive index n2=2, n1≦1.64 can be obtained. Or, in another embodiment, assuming that the incident angle θ2 at the interface between the reflective film 510 and the patterned adhesive layer 522'=55 degrees, when n1 ranges from 1.2 to 1.6, then n2 should be greater than 1.46 to 1.95 scope. In other words, when the reflective layer 512 is adjacent to air, the reflective film 510 can be any suitable material with a refractive index matched with the patterned adhesive layer 522', not limited to metal or alloy materials.
接着，来到图1的步骤122以及图12。以转移头600吸取微型发光元件 500，使微型发光元件500脱离载体基板400。于此，转移头600可以是静电转移头、黏性转移头、凡得瓦尔力转移头、机械转移头、或其它合适的转移头。举例而言，可以采用聚甲基硅氧烷(polydimethylsiloxane；PDMS)转移头或其它合适的材料转移头，其具有微弱的黏着特性。Next, come to step 122 in FIG. 1 and FIG. 12 . The micro light emitting device 500 is picked up by the transfer head 600 to separate the micro light emitting device 500 from the carrier substrate 400 . Here, the transfer head 600 may be an electrostatic transfer head, an adhesive transfer head, a van der Waals force transfer head, a mechanical transfer head, or other suitable transfer heads. For example, a polymethylsiloxane (polydimethylsiloxane; PDMS) transfer head or other suitable material transfer head can be used, which has weak adhesive properties.
由于微型发光元件500与载体基板400的接触面积(即表面514A的面积) 小于微型发光元件500于载体基板400的投影面积，如此一来，在拾取(例如: 吸取)微型发光元件500的过程中，微型发光元件500与载体基板400的黏着力甚小，而便于微型发光元件500藉由转移头600的拾取来脱离载体基板400。于此，可以通过前述转移头，例如：静电转移头、黏性转移头等来拾取(例如: 吸取)微型发光元件500。Since the contact area between the micro light emitting element 500 and the carrier substrate 400 (ie, the area of the surface 514A) is smaller than the projected area of the micro light emitting element 500 on the carrier substrate 400, in this way, in the process of picking up (for example: sucking) the micro light emitting element 500 Therefore, the adhesive force between the micro-light emitting device 500 and the carrier substrate 400 is very small, and it is convenient for the micro-light-emitting device 500 to be separated from the carrier substrate 400 by being picked up by the transfer head 600 . Here, the miniature light-emitting device 500 can be picked up (for example, sucked) by the aforementioned transfer head, such as an electrostatic transfer head, an adhesive transfer head, and the like.
接着，来到图1的步骤124以及图13。将微型发光元件500放置于接收基板700上。于此，接收基板700上设有附着层800，微型发光元件500的支撑部FC可以插入附着层800中。于部分实施方式中，接收基板700可以是阵列基板，阵列基板包括多个主动元件(图未示)、多个导线(图未示)以及多个电极垫(图未示)。其中，微型发光元件500其中一个对应于主动元件(图未示)其中一个、对应于电极垫(图未示)其中一个与对应于多个导线(图未示)其中一者，发光二极管530其中一个的第一电极534与对应的主动元件(图未示)电性连接，发光二极管530其中一个的第二电极535与对应的电极垫(图未示)电性连接，且主动元件(图未示)与对应的导线(图未示)电性连接。Next, come to step 124 of FIG. 1 and FIG. 13 . The micro light-emitting element 500 is placed on the receiving substrate 700 . Here, the receiving substrate 700 is provided with an adhesion layer 800 , and the support portion FC of the micro light emitting element 500 can be inserted into the adhesion layer 800 . In some implementations, the receiving substrate 700 may be an array substrate, and the array substrate includes a plurality of active devices (not shown), a plurality of wires (not shown), and a plurality of electrode pads (not shown). Among them, one of the miniature light-emitting elements 500 corresponds to one of the active elements (not shown), one of the electrode pads (not shown) and one of the plurality of wires (not shown), and the light-emitting diode 530 One of the first electrodes 534 is electrically connected to the corresponding active element (not shown in the figure), the second electrode 535 of one of the light emitting diodes 530 is electrically connected to the corresponding electrode pad (not shown in the figure), and the active element (not shown in the figure) shown) are electrically connected with corresponding wires (not shown).
据此，本发明的部分实施方式可以提供一种显示装置900，显示装置900 包含阵列基板(即接收基板700)、附着层800以及前述的微型发光元件500。附着层800设置于阵列基板(即接收基板700)上。微型发光元件500设置于阵列基板(即接收基板700)上，且微型发光元件500经由附着层800附着于阵列基板(即接收基板700)上。于本发明的部分实施方式中，微型发光元件500更包含支撑部FC，往阵列基板(即接收基板700)延伸，其中支撑部FC的材料包含反射层512与图案化黏着层522’其中至少一者的材料。于此，附着层800 的材料可以与图案化黏着层522’的材料实质上相同或不同。其中，本发明为显示装置900时，不存在图13中所示的转移头600。Accordingly, some embodiments of the present invention can provide a display device 900 , which includes an array substrate (ie, a receiving substrate 700 ), an adhesion layer 800 and the aforementioned micro light-emitting element 500 . The adhesion layer 800 is disposed on the array substrate (ie, the receiving substrate 700 ). The micro light emitting device 500 is disposed on the array substrate (ie, the receiving substrate 700 ), and the micro light emitting device 500 is attached to the array substrate (ie, the receiving substrate 700 ) through the adhesion layer 800 . In some embodiments of the present invention, the micro light-emitting device 500 further includes a support portion FC extending toward the array substrate (ie, the receiving substrate 700 ), wherein the material of the support portion FC includes at least one of the reflective layer 512 and the patterned adhesive layer 522 ′ author's material. Here, the material of the adhesive layer 800 may be substantially the same as or different from the material of the patterned adhesive layer 522'. However, when the present invention is a display device 900, the transfer head 600 shown in FIG. 13 does not exist.
图14为根据本发明的部分实施方式的微型发光元件500的剖面示意图。于本实施方式于图11的实施方式的差别在于：本实施方式中，支撑部FC不位于发光二极管530的正下方。于此，支撑部FC于载体基板400上的投影长度L1大约为1微米至20微米，例如约5微米，以在有限的空间内达到固定的效用。FIG. 14 is a schematic cross-sectional view of a micro light emitting device 500 according to some embodiments of the present invention. The difference between this embodiment and the embodiment shown in FIG. 11 is that in this embodiment, the support portion FC is not located directly under the light emitting diode 530 . Here, the projected length L1 of the support portion FC on the carrier substrate 400 is about 1 micron to 20 microns, for example, about 5 microns, so as to achieve a fixed effect in a limited space.
于此，支撑部FC仅包含反射延伸部514。应了解到，于其他实施方式中，可以设计支撑部FC包含反射层512以及反射延伸部514，且此时亦支撑部FC 不位于发光二极管530的正下方。或者，于其他实施方式中，可以设计支撑部 FC位于发光二极管530的正下方，且此时支撑部FC仅包含反射延伸部514Here, the supporting portion FC only includes the reflective extension portion 514 . It should be understood that in other embodiments, the support portion FC may be designed to include the reflective layer 512 and the reflective extension portion 514 , and at this time, the support portion FC is not located directly under the light emitting diode 530 . Alternatively, in other embodiments, the support portion FC can be designed to be located directly below the light emitting diode 530, and at this time the support portion FC only includes the reflective extension portion 514
本实施方式的其他细节大致如前所述，在此不再赘述。Other details of this embodiment are roughly as described above, and will not be repeated here.
图15为根据本发明的部分实施方式的微型发光元件500的剖面示意图。于本实施方式于图11的实施方式的差别在于：本实施方式中，反射层512包含中央区CA与周边区PA，周边区PA设置于中央区CA外侧，位于中央区 CA的峰部512P的两相邻距离为第一距离DA1，位于周边区PA的峰部512P 的两相邻距离为第二距离DA2，其中第一距离DA1与第二距离DA2是不相等的。举例而言，于此，第一距离DA1大于第二距离DA2，而使周边区PA设的峰部512P的密度大于中央区CA的峰部512P的密度。藉此，可以增加边缘光线的萃取率，以防止来自发光二极管530的光线经反射层512反射后被发光二极管530的第一电极534以及第二电极535遮挡下来。FIG. 15 is a schematic cross-sectional view of a micro light emitting device 500 according to some embodiments of the present invention. The difference between this embodiment and the embodiment shown in FIG. 11 is that in this embodiment, the reflective layer 512 includes a central area CA and a peripheral area PA. The two adjacent distances are the first distance DA1, and the two adjacent distances between the peaks 512P located in the peripheral area PA are the second distance DA2, wherein the first distance DA1 and the second distance DA2 are not equal. For example, here, the first distance DA1 is greater than the second distance DA2, so that the density of the peaks 512P in the peripheral area PA is greater than the density of the peaks 512P in the central area CA. In this way, the extraction rate of the marginal light can be increased to prevent the light from the LED 530 from being reflected by the reflective layer 512 and being blocked by the first electrode 534 and the second electrode 535 of the LED 530 .
于本实施方式中，中央区CA可为一圆状，周边区PA可为环绕该圆状的环状。于其他实施方式中，中央区CA与周边区PA可以仅为一方向上的不同区域，而非以环状排列。于部分实施方式中，可以设计峰部512P的密度由中心向外侧变大或逐渐变大。本实施方式的其他细节大致如前所述，在此不再赘述。In this embodiment, the central area CA can be a circle, and the peripheral area PA can be a ring surrounding the circle. In other embodiments, the central area CA and the peripheral area PA may only be different areas in one direction, instead of being arranged in a ring. In some embodiments, the density of the peaks 512P can be designed to increase or gradually increase from the center to the outside. Other details of this embodiment are roughly as described above, and will not be repeated here.
图16为根据本发明的部分实施方式的微型发光元件500的剖面示意图。于本实施方式于图11的实施方式的差别在于：本实施方式中，反射层512的峰部512P为圆凸形状。反射层512的峰部512P的剖面具有圆形形状。本实施方式的其他细节大致如前所述，在此不再赘述。FIG. 16 is a schematic cross-sectional view of a micro light emitting device 500 according to some embodiments of the present invention. The difference between this embodiment and the embodiment shown in FIG. 11 is that in this embodiment, the peak portion 512P of the reflective layer 512 has a circular convex shape. The cross section of the peak portion 512P of the reflective layer 512 has a circular shape. Other details of this embodiment are roughly as described above, and will not be repeated here.
图17为根据本发明的部分实施方式的微型发光元件500的剖面示意图。于本实施方式于图11的实施方式的差别在于：本实施方式中，支撑部FC靠近载体基板400的表面是为渐窄的形状，例如：支撑部FC顶部较宽，往支撑部FC底部较窄，则支撑部FC与载体基板400的接触面积较图11小。藉此，可以缩小微型发光元件500与载体基板400的接触面积(即表面514A的面积)，如此一来，在拾取(例如：吸取)微型发光元件500的过程中，微型发光元件500与载体基板400的黏着力甚小，而便于微型发光元件500藉由转移头600的拾取脱离载体基板400。FIG. 17 is a schematic cross-sectional view of a micro light-emitting device 500 according to some embodiments of the present invention. The difference between this embodiment and the embodiment shown in FIG. 11 is that in this embodiment, the surface of the support portion FC close to the carrier substrate 400 is tapered. narrow, the contact area between the support portion FC and the carrier substrate 400 is smaller than that in FIG. 11 . In this way, the contact area between the micro-light emitting element 500 and the carrier substrate 400 (that is, the area of the surface 514A) can be reduced. The adhesive force of the 400 is very small, and it is convenient for the micro light-emitting device 500 to be picked up by the transfer head 600 and detached from the carrier substrate 400 .
本实施方式的其他细节大致如前所述，在此不再赘述。Other details of this embodiment are roughly as described above, and will not be repeated here.
同时参考图11与图18。图18(a)、(b)与(c)为根据本发明的多个实施方式的微型发光元件500的反射层512的多个峰部512P与多个谷部512V的示意图。虚框用以表示微型发光元件500于载体基板400的垂直投影范围。在(a) 实施方式中，反射层512的表面512A可以在二维方向有高低变化，例如峰部 512P可以是矩阵点状分布或乱数点状分布。于此，反射层512的峰部512P为圆锥形状，不应以此限制本发明的范围。于其他实施方式中，峰部512P可为椭圆锥形、四角椎形、三角锥形。Refer to FIG. 11 and FIG. 18 at the same time. 18( a ), ( b ) and ( c ) are schematic diagrams of a plurality of peaks 512P and a plurality of valleys 512V of the reflective layer 512 of the micro light emitting device 500 according to various embodiments of the present invention. The dashed frame is used to indicate the vertical projection range of the micro light emitting device 500 on the carrier substrate 400 . In (a) embodiment, the surface 512A of the reflective layer 512 may have height variations in the two-dimensional direction, for example, the peaks 512P may be distributed in a matrix or random number. Here, the peak portion 512P of the reflective layer 512 is in a conical shape, which should not limit the scope of the present invention. In other embodiments, the peak portion 512P may be in the shape of an elliptical cone, a quadrangular pyramid, or a triangular cone.
或者，于(b)实施方式中，反射层512的表面512A可以仅在一维方向有高低变化，峰部512P与谷部512V可朝一方向延伸，而于另一方向有高低分布差异。于本实施方式中，峰部512P为长条形，其可具有三角形、半椭圆剖面等。Alternatively, in the (b) embodiment, the surface 512A of the reflective layer 512 may only have height variations in one dimension, and the peaks 512P and valleys 512V may extend in one direction and have height distribution differences in the other direction. In this embodiment, the peak portion 512P is elongated, which may have a triangular, semi-elliptical cross-section or the like.
于(c)实施方式中，反射层512的峰部512P与谷部512V可以同心圆状分布，其中支撑部FC可位于此同心圆的圆心。于本实施方式中，峰部512P为长条形，其可具有三角形、半椭圆剖面等。应了解到，反射层512的峰部512P 与谷部512V的位置分布、深度、形状可以视实际情况而调整，不应以此限制本发明的范围。In the embodiment (c), the peaks 512P and valleys 512V of the reflective layer 512 may be distributed in concentric circles, and the support portion FC may be located at the center of the concentric circles. In this embodiment, the peak portion 512P is elongated, which may have a triangular, semi-elliptical cross-section or the like. It should be understood that the position distribution, depth, and shape of the peaks 512P and valleys 512V of the reflective layer 512 can be adjusted according to actual conditions, which should not limit the scope of the present invention.
本发明的多个实施方式中，藉由支撑部的设置，降低微型发光元件与载体基板的黏着力，以便于微型发光元件的转移。此外，还可设计微型发光元件的反射层的形状，以利于改善微型发光元件的发光光线分布。In various embodiments of the present invention, the setting of the support portion reduces the adhesion between the micro-light-emitting element and the carrier substrate, so as to facilitate the transfer of the micro-light-emitting element. In addition, the shape of the reflective layer of the micro-light-emitting element can also be designed to facilitate the improvement of light distribution of the micro-light-emitting element.
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106124760 | 2017-07-24 | ||
| TW106124760ATWI625871B (en) | 2017-07-24 | 2017-07-24 | Micro light-emitting device, method for fabricating the same, and display device and transient carrier device using the same |
| Publication Number | Publication Date |
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| CN107579141A CN107579141A (en) | 2018-01-12 |
| CN107579141Btrue CN107579141B (en) | 2019-11-12 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710893929.5AActiveCN107579141B (en) | 2017-07-24 | 2017-09-28 | Micro light-emitting element and manufacturing method thereof, display device and transition carrier plate device |
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| TW (1) | TWI625871B (en) |
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