The content of the invention
This project proposes a kind of induction structure based on glass substrate, can increase substantially the Q values of inductance, increases it certainlyResonant frequency.The process employs ICP glass deep etching technologies, inductance slot structure is etched on a glass substrate, is then entered againRow metal chemical industry skill, realizes high Q value inductance.Meanwhile the compatible glass pinboard manufacturing technology of this method, on glass pinboardIntegrating passive structure, so-called intelligent pinboard is formed, realizes High Density Integration.
According to one embodiment of present invention, there is provided a kind of glass base inductance, including：Glass substrate, the glass substrateFirst surface there is inductance groove, the inductance groove forms spirality channel；The inductance coil of the inductance groove is filled in, it is describedInductance coil is spiral coil；The first surface of the glass substrate and the dielectric layer of the inductance coil are covered, is given an account ofThere is window in matter layer；And the extraction electrode in the window is arranged on, the extraction electrode is electrically connected with the inductance coilConnect.
In one embodiment of the invention, the depth of inductance groove is in the range of 10-50 microns.
In one embodiment of the invention, inductance coil is square spiral coil, circular spiral coil, hexagon spiralCoil or octagon spiral winding.
In one embodiment of the invention, the line width w of inductance coil inner ringIt is interiorLess than the line width w of outer ringOutside。
According to another embodiment of the invention, there is provided a kind of encapsulating structure, including：Glass pinboard, the glass turnFishplate bar includes：Glass substrate, the glass substrate have first surface and the second surface relative with the first surface；IfThe inductance groove on the first surface of the glass substrate is put, the inductance groove forms spirality channel；It is filled in the inductanceThe inductance coil of groove, the inductance coil are spiral coil；Be arranged on the first surface of the glass substrate and with it is describedThe extraction electrode of inductance coil electrical connection；Through one or more through holes of the glass substrate, it is provided with and leads in the through holeElectric structure；And it is arranged on the first surface and second surface of the glass substrate and electric with the conductive structure in the through holeThe conductive welding disk of connection.
In another embodiment of the present invention, the encapsulating structure also includes one be arranged on the glass pinboardOr multiple chips.
In another embodiment of the present invention, glass pinboard also includes the first surface for being arranged on the glass substrateOn the first wire structures again, the described first conductive welding disk on the side and first surface of wire structures and extraction electrode electricity againConnection, described first is provided with one or more external pads again on the opposite side of wire structures.
In another embodiment of the present invention, glass pinboard also includes the second surface for being arranged on the glass substrateOn the second wire structures again, described second again the side of wire structures electrically connected with the conductive welding disk on second surface, it is describedSecond is provided with one or more external pads again on the opposite side of wire structures.
In another embodiment of the present invention, the encapsulating structure also include be arranged on described second again wire structures oneSoldered ball on individual or multiple external pads, the soldered ball are used to be connected to package substrate.
According to still another embodiment of the invention, there is provided a kind of manufacture method of encapsulating structure, including：On a glass substrateThrough hole and inductance groove are made, the through hole runs through the glass substrate, and the inductance groove is formed the first of the glass substrateSurface, the inductance groove form spirality channel, and the depth of the inductance groove is in the range of 10-50 microns；In through hole and electricityFeel and conductive structure is formed in groove, including adhesion is formed on the surface by sputtering at through-hole side wall, inductance groove and glass substrateLayer and Seed Layer, then carry out plating filling metal so that inductance groove and through hole are filled with metal completely, to glass substrate surfaceOn metal level carry out CMP process, remove glass substrate surface on metal level, only leave through hole and inductance grooveIn metal；Conductive welding disk is formed at the through hole both ends and forms extraction electrode at the both ends of inductance groove；And in the glassFirst is formed on the first surface of glass substrate and wire structures and/or is formed second again on the second surface of the glass substrate againWire structures.
Embodiment
In the following description, with reference to each embodiment, present invention is described.However, those skilled in the art will recognizeKnow can in the case of neither one or multiple specific details or with it is other replacement and/or addition method, material or componentImplement each embodiment together.In other situations, it is not shown or known structure, material or operation is not described in detail in order to avoid making thisThe aspects of each embodiment of invention is obscure.Similarly, for purposes of explanation, specific quantity, material and configuration are elaborated, withComprehensive understanding to embodiments of the invention is just provided.However, the present invention can be implemented in the case of no specific detail.ThisOutside, it should be understood that each embodiment shown in accompanying drawing is illustrative expression and is not drawn necessarily to scale.
In this manual, the reference to " one embodiment " or " embodiment " means to combine embodiment descriptionSpecial characteristic, structure or characteristic are included at least one embodiment of the invention.In the short of this specification middle appearance everywhereLanguage is not necessarily all referring to the same embodiment " in one embodiment ".
It should be noted that processing step is described with particular order for embodiments of the invention, but this is simplyConvenience distinguishes each step, and is not the sequencing for limiting each step, in different embodiments of the invention, can be according to workSkill is adjusted to adjust the sequencing of each step.
Inductance has extremely important effect in less radio-frequency front-end circuit.Inductance mainly has 3 electrical parameters：InductanceMeasure (L), the ability of storage and conversion energy；Quality factor (Q), energy stores and the efficiency of conversion；Self-resonant frequency (f0), electricityFeel the frequency range that can be worked.With high q-factor, big inductance quantity L and high resonant frequency f0Inductance be this area technologyThe target of personnel's long-sought.
Traditional inductance makes on a silicon substrate, due to the semiconductor property of silicon, when the letter propagated in inductance coilWhen number frequency increases, silicon substrate is coupled to the leakage loss increase on ground.The Kelvin effect of metallic conductor causes high in inductance coilFrequency signal code, which is gradually gathered in the small space on inductance top layer, to be distributed, and is exponentially decayed from top layer to coil inside, thereforeInductance coil resistance loss will raise under high frequency.The increase of signal frequency causes the eddy-current loss in wire coil and substrate to addIt is acute.The feed-through impedance of coil itself can also reduce with the increase of frequency.
In order to improve the performance of existing inductance component, the present invention proposes a kind of induction structure based on glass substrate, passed throughThe solution of the present invention can increase substantially the Q values of inductance, increase its self-resonant frequency.The solution of the present invention is deep using ICP glassLithographic technique, inductance slot structure is etched on a glass substrate, then carry out metallization process again, realize high Q value inductance.TogetherWhen, the compatible glass pinboard manufacturing technology of the solution of the present invention, the integrating passive structure on glass pinboard, form intelligence and turnFishplate bar, realize High Density Integration.
The electric charge that glass material does not move freely, dielectric properties are excellent, thermal coefficient of expansion (CTE) approaches with silicon, with glassGlass material replaces silicon materials to manufacture inductance component as substrate, can reduce substrate leakage loss and eddy-current loss.
With reference to Figure 1A to Fig. 1 G, the manufacture method of the induction structure based on glass substrate is described.Figure 1A to Fig. 1 G showsGo out the diagrammatic cross-section for the process for forming the induction structure based on glass substrate according to one embodiment of present invention.
First, glass substrate 101 is cleaned and mask layer 102 is made in glass substrate 101.Mask layer 102Material can be metal such as aluminium, nickel etc. or polymeric material such as SU-8, or semi-conducting material such as silicon.Then coveringSpin coating photoresist 103 in film layer 102, as shown in Figure 1A.
Development is exposed to photoresist 103 so that photoresist 103 patterns, and is with the photoresist 103 of patterningMask etching mask layer 102, mask layer pattern 104 is formed, as shown in Figure 1B.
Next, using mask layer pattern 104, by inductively coupled plasma (ICP) glass deep etching process, formedInductance groove 105, groove depth remove etching mask layer in 10-50 microns, as shown in Figure 1 C.Inductance groove 105 is in glass substrate 101Surface formed spirality channel.Inductively coupled plasma (ICP) dry etching technology control accuracy is high, and etching surface is smoothIt is smooth, perpendicularity is good, available for etching high aspect ratio structure.
Next inductance coil structure 106 is formed in inductance groove 105.Because inductance groove 105 is in the table of glass substrate 101Face forms spirality channel, therefore inductance coil structure 106 is planar spiral coil.Specifically retouched below in conjunction with Fig. 2 and Fig. 3State the shape of inductance coil structure 106.In some embodiments of the invention, by sputtering at inductance groove 105 and glass linedAdhesion layer and Seed Layer 107 are formed on the surface at bottom 101.For example, adhesion layer can be titanium/titanium nitride/cadmium (Ti/TiN/Cr) etc.Metal, Seed Layer can be copper (Cu).Then plating filling is carried out so that inductance groove 105 is filled by metallic copper completely, such as Fig. 1 DIt is shown.
Next, being chemically-mechanicapolish polished (CMP) technique to the metal copper layer on the surface of glass substrate 101, glass is removedLayers of copper on the surface of glass substrate 101, only leaves the copper in inductance groove 105, as referring to figure 1E.
Dielectric layer 108 is formed on the surface of glass substrate 101 and the surface of inductance coil structure 106 and is opened a window, is such as schemedShown in 1F.In some embodiments of the invention, the material of dielectric layer 108 can be polyimides (PI), polybenzocyclobutene(BCB), polybenzoxazole (PBO) material etc..
Next, forming extraction electrode 110 in the window of dielectric layer 108, and wiring layer again is formed on dielectric layer 108(RDL) 109, as shown in Figure 1 G.In some embodiments of the invention, first by physical vapor deposition PVD in dielectric layer 108And its PVD adhesion layers and Seed Layer are formed on window, and form extraction electrode 110 and in dielectric layer by electroplating filling windowMetal conducting layer is formed on 108, then removes unwanted metal level, ultimately forms again wiring layer (RDL) 109.
It is consequently formed the inductance based on glass substrate.Glass substrate belongs to the insulating material of low-k, lossThe factor is very low, and the substrate loss of inductance can be substantially reduced using glass substrate, improves the Q values of inductance.In the reality of the present inventionApply in example, using ICP glass deep etching process, row metal of going forward side by side filling, the parasitic series resistance of inductance can be reduced, improve electricityThe Q values of sense.Using ICP glass deep etching process, row metal of going forward side by side filling, it can also reduce the height of glass substrate, meet small-sizedChange the direction of development.Embodiments of the invention use wafer scale manufacture craft, and it is high to make precision.
Fig. 2 shows the top view of the inductance 200 based on glass substrate of an example according to the present invention.As shown in Fig. 2Inductance 200 is formed in glass substrate 210, and inductance 200 is square spiral coil.
Fig. 3 shows the top view of the inductance 300 based on glass substrate of another example according to the present invention.Such as Fig. 3 institutesShow, inductance 300 is formed in glass substrate 310, and inductance 300 is circular spiral coil.
Fig. 1 to Fig. 3 embodiment schematically show only the structure and shape of the inductance based on glass substrate, can basisActual requirement, design the size, shape and the number of turn of inductance coil.For example, in other embodiments of the invention, inductance can be withIt is hexagonal spiral circle, octagon spiral winding etc..
In addition, also it can such as reduce coil-span by optimizing inductance coil size, reduce inner ring line width to improve inductancePerformance.For example, in the inductance 200 shown in Fig. 2, the line width w of coil inner ringIt is interiorLess than the line width w of coil outer ringOutside。
Fig. 4 shows the diagrammatic cross-section of the glass pinboard 400 according to an embodiment of the invention including inductance.Such asShown in Fig. 4, glass pinboard 400 includes glass substrate 410.Glass substrate 410 has first surface 410a and with described theSecond surface 410b relative one surface 410a.
Glass substrate 410 can have one or more through holes 411 through glass substrate, have conduction in the side wall of through holeLayer, conductive layer can fill full through hole or be not filled by full through hole.When conductive layer is not filled by full through hole, it is also necessary to fill out in through-holesIsolation protective material is filled, isolation protective material may be selected from the insulation materials such as silica, silicon nitride, polyimides, green oil, BCB, PBOOne or more in material.Conductive layer can be one or more layers structure.In one embodiment of the invention, conductive layer can wrapInclude barrier layer and/or adhesion layer and/or electrodeposited coating.Barrier layer and/or adhesion layer can be tantalum, tantalum nitride/tantalum, titanium nitride, titaniumTungsten alloy, chromium, titanium etc..Electrodeposited coating can be electro-coppering or aluminium lamination.The both ends of through hole 411 respectively with glass substrate 410 firstSurface 410a and second surface 410b are flushed.Conductive layer in through hole 411 is respectively with being arranged on first surface 410a and the second tableConductive welding disk 412 and 413 on the 410b of face electrically connects.
Glass substrate 410 may also include one or more inductance 414.Inductance 414 includes being formed in glass substrate 410Inductance groove 415, groove depth is in 10-50 microns；The inductance coil 416 formed in inductance groove 415；Electrically connected with inductance coil 416Extraction electrode 417.In a particular embodiment of the present invention, size, the shape of inductance coil 416 can according to actual requirement, be designedShape and the number of turn.For example, inductance coil 416 can be square coil, circular coil, hexagon coil, octagon coil etc..Such asShown in Fig. 4, inductance 414 is formed in the first surface 410a sides of glass substrate 410, but the scope of the present invention not limited to this.In other embodiments of the invention, inductance 414 may be formed at the first surface 410a sides and/or second of glass substrate 410Surface 410b sides.
In the embodiment of the pinboard shown in Fig. 4, the glass through hole technology of silicon materials is substituted with glass to avoid silicon from leading toThe problem of hole is present, in addition, glass through hole technology need not make insulating barrier, barrier layer, reduces process complexity and be processed intoThis.
In some embodiments of the invention, glass pinboard 400 also optionally includes being arranged on glass substrate 410On first surface 410a first again wire structures 420 and/or be arranged on the second surface 410b of glass substrate 410 secondWire structures 430 again.First conductive welding disk 412 and extraction electrode on the side of wire structures 420 and first surface 410a again417 electrical connections.First is provided with one or more external pads 421 again on the opposite side of wire structures 420.Optionally oneSoldered ball is formed on individual or multiple external pads 421.Second side of wire structures 430 and the conductive weldering on second surface 410b againDisk 413 electrically connects.Second is provided with one or more external pads 431 again on the opposite side of wire structures 430.Optionally existSoldered ball is formed on one or more external pads 431.In some embodiments of the invention, first again on wire structures 420External pad 421 can electrically connect with chip to be packaged, and second again the external pad 431 on wire structures 430 can with encapsulate basePlate electrically connects.
By first, wire structures 430 can plan the external of glass pinboard 400 again to wire structures 420 and second again againThe position of pad and the route being connected with external circuit.Due to the area of glass pinboard can be made full use of, therefore can be used forThe surface area that arrangement is electrically interconnected greatly increases, so that interconnection density maximizes, while can increase the size of soldered ball.
Include the manufacturing process of the glass pinboard of inductance with reference to Fig. 5 A to Fig. 5 D and Fig. 6 descriptions.Fig. 5 A to 5D showGo out the diagrammatic cross-section of the manufacturing process of the glass pinboard according to an embodiment of the invention including inductance.Fig. 6 is shownThe flow chart of the manufacturing process of glass pinboard according to an embodiment of the invention including inductance.
First, in step 610, through hole and inductance groove are made on a glass substrate, as shown in Figure 5A.In some of the present inventionIn embodiment, through hole making can be carried out first, then carry out the making of inductance groove., can in some other embodiment of the present inventionInductance groove making is carried out first, then carries out the making of through hole.In the other embodiment of the present invention, inductance groove can be carried out simultaneouslyWith the making of through hole, because the depth of inductance groove is less than the depth of through hole, after the depth of inductance groove is reached, mask is formed againLayer simultaneously patterns, and so as to cover inductance groove region and only expose via regions, performs etching again, completes the making of through hole.SystemIt can be wet etching, dry etching, deep reaction ion etching or laser ablation etc. to make the technology that through hole and inductance groove use.It is excellentChoosing uses inductively coupled plasma (ICP) dry etching technology.In one embodiment of the invention, can use with Figure 1A extremelySimilar procedure shown in 1C completes the making of through hole and inductance groove.
In step 620, conductive structure is formed in through hole and inductance groove, as shown in Figure 5 B.In some implementations of the present inventionIn example, adhesion layer and Seed Layer are formed on surface that can be by sputtering at through-hole side wall, inductance groove and glass substrate.For example,Adhesion layer can be the metals such as titanium/titanium nitride/cadmium (Ti/TiN/Cr), and Seed Layer can be copper (Cu).Then plating is carried out to fill outFill so that inductance groove and through hole are filled by metallic copper completely.Next, chemistry is carried out to the metal copper layer on glass substrate surface(CMP) technique is mechanically polished, the layers of copper on glass substrate surface is removed, only leaves the copper in through hole and inductance groove.
In step 630, conductive welding disk is formed at through hole both ends and forms extraction electrode at the both ends of inductance groove, such as Fig. 5 C institutesShow.
Next, in step 640, the first wire structures and/or in glass again are formed on the first surface of glass substrateThe second wire structures again are formed on the second surface of substrate, as shown in Figure 5 D.First again on wire structures side and first surfaceConductive welding disk and extraction electrode electrical connection.First is provided with one or more external pads again on the opposite side of wire structures.Second again wire structures side electrically connected with the conductive welding disk on second surface.Second is provided with the opposite side of wire structures againOne or more external pads.
Fig. 7 shows that the section of the system in package 700 according to an embodiment of the invention comprising glass pinboard showsIt is intended to.
As shown in fig. 7, system in package 700 includes glass pinboard 710.Glass shown in glass pinboard 710 and Fig. 4Pinboard 400 is similar, for the purpose of simplifying the description, is no longer described in detail.
System in package 700 also includes being arranged on the first of glass pinboard 710 the first chip on wire structures 711 again720 and second chip 730, wherein the first chip 720 and the second chip 730 pass through soldered ball or projection 731 and first wire bond againPad on structure 711 forms electrical connection.Soldered ball can be set on wire structures 712 again in the second of glass pinboard 710, for evenIt is connected to package substrate.
Although described above is various embodiments of the present invention, however, it is to be understood that they are intended only as example to present, and without limitation.For those skilled in the relevant art it is readily apparent that various combinations, modification can be made to itWith change without departing from the spirit and scope of the present invention.Therefore, the width of the invention disclosed herein and scope should not be upperState disclosed exemplary embodiment to be limited, and should be defined according only to appended claims and its equivalent substitution.