The content of the invention
The present invention provides a kind of preparation method and substrate, display of Graphene electrodes, can accurately control graphene electricThe L/S of pole reaches Nano grade, realizes high light transmittance and strong flexible Graphene electrodes.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of Graphene electrodes are providedPreparation method, the preparation method include：Graphene oxide layer is formed on underlay substrate；Applied on the graphene oxide layerCloth polymeric coating layer；The polymeric coating layer is imprinted, to form patterned polymeric coating layer；To the graphite oxideAlkene layer carries out reduction treatment, and the partial oxidation of graphite alkene layer by the patterned polymeric coating layer covering is not reduced to graphiteAlkene；The polymeric coating layer is peeled off to obtain patterned Graphene electrodes.
In order to solve the above technical problems, another technical solution used in the present invention is：A kind of substrate, the substrate are providedIncluding Graphene electrodes made of above-mentioned preparation method.
In order to solve the above technical problems, another technical scheme that the present invention uses is：A kind of display is provided, it is described aobviousShow that device includes substrate described above.
The beneficial effects of the invention are as follows：The preparation method and substrate, display of a kind of Graphene electrodes are provided, by usingNanometer embossing, the Graphene electrodes with L/S structures are prepared on substrate, can accurately control the L/S of Graphene electrodesUp to Nano grade, high light transmittance and strong flexible Graphene electrodes are realized, and the preparation method technique is simple, it is aobvious without exposingShadow can reduce processing procedure and material cost.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, completeSite preparation describes, it is clear that described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.It is based onEmbodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not madeEmbodiment, belong to the scope of protection of the invention.
Refer to the schematic flow sheet of Fig. 1 and Fig. 2, Fig. 1 for the embodiment of Graphene electrodes preparation method one of the present invention, figure2 be the structural representation of the embodiment of Graphene electrodes preparation process one of the present invention, and this method comprises the following steps：
S1, graphene oxide layer is formed on underlay substrate.
Can with further reference in Fig. 2 a), wherein, the underlay substrate can be transparent material, be specifically as follows glass, poly-Any form of underlay substrates such as acid imide (PI), polyethylene terephthalate (PET) or transparent plastic, herein this hairIt is bright to be not specifically limited.And in step S1, the formation of graphene oxide layer can use electro-deposition, the methods of, and hereinIt is not specifically limited.
S2, polymeric coating layer is coated with graphene oxide layer.
With further reference in Fig. 2 b), wherein, the polymeric coating layer (Resist) can be thermoplastic macromolecule material orOne kind in ultraviolet hardening high polymer material, and also need to adulterate a certain proportion of releasing agent in the polymeric coating layer.At thisInvent in an application scenarios, used polymeric coating layer is polymethyl methacrylate (PolymethylMethacrylate, PMMA), and baking-curing shaping is carried out to the polymeric coating layer after being coated with.
S3, nano impression is carried out to polymeric coating layer, to form patterned polymeric coating layer.
With further reference in Fig. 2 c) and d), wherein, described nanometer embossing can include but is not limited to heat pressing type and receiveRice impressing, stepping exposure type nano impression, roller impressing, ultra-violet curing impressing, the nano impression laser based on template protection are auxiliaryThe one kind helped in directly impressing and ultraviolet stamping and photoetching United Technologies, and can select difference for different polymeric coating layersStamping technique, in an of the invention application scenarios, used nano-imprinting method be heat pressing type nano impression, and of the inventionJust specifically heat pressing type nano impression is described in detail.
As shown in Fig. 2 step S3 further comprises following sub-step：
S31, heat polymeric coating layer.
, it is necessary to be heated to thermoplastic macromolecule material PMMA and reach PMMA glass transition temperature Tg in step S31On (Glass transistion temperature), and thermoplastic, under elastomeric state, viscosity reduces, and mobility increasesBy force.
S32, insert impressing mould and hot pressing is carried out to polymeric coating layer.
After heating polymeric coating layer PMMA, the impressing mould alignment with nanoscale is pressed in the polymeric coating layer therewithOn PMMA, and apply appropriate pressure, polymeric coating layer PMMA can fill the cavity in mould.In the process, the heightMolecular coatings PMMA thickness should be bigger than the cavity height of mould, so as to avoid the direct contact of mould and substrate and caused byDamage.In addition, the line width of mould used in the present embodiment can be 10nm~10um.
S33, it is stripped after polymeric coating layer cooling, to form patterned polymeric coating layer.
After molding terminates, temperature reduces high polymer material solidification, thus can have the figure overlapped with impressing mould.WithAfter remove impressing mould, and carry out anisotropic etching remove residual polymer, followed by pattern transfer, to form figureThe polymeric coating layer of shape.Wherein, the method that the pattern transfer in the step can use lithographic technique or stripping, the present inventionIt is not especially limited.
S4, reduction treatment is carried out to graphene oxide layer, the partial oxidation stone for the polymeric coating layer covering not being patterned immediatelyBlack alkene layer is reduced to graphene.
With further reference in Fig. 2 e), in step s 4 to graphene oxide layer used by restoring method include but unlimitedOne in reducing agent reduction, high-temperature heat treatment reduction, electrochemical reduction, solvothermal, catalysis reduction and microwave reductionKind, and the present invention is not specifically limited herein.Wherein, when carrying out reduction treatment to graphene oxide layer, the height that is not patterned immediatelyThe partial oxidation of graphite alkene layer of molecular coatings covering is reduced to graphene (specifically may refer to the d figures in Fig. 2).
S5, polymeric coating layer is peeled off to obtain patterned Graphene electrodes.
With further reference in Fig. 2 f), wherein, the partial oxidation of graphite alkene layer quilt of the polymeric coating layer that is not patterned immediately coveringAfter being reduced to graphene, unnecessary polymeric coating layer is peeled off using stripper (Stripper), water-filling of going forward side by side wash acquisition tool byPatterned Graphene electrodes.
In addition, made of the above method Graphene electrodes L/S electrodes, up to Nano grade, surface is flat, and hasFine pliability, suitable for Flexible Displays or curved-surface display, and the penetrance of panel can be effectively improved.Certain graphene electricityPole can also apply to the field of other demand fine electrodes.
In above-mentioned embodiment, by using nanometer embossing, the graphene electricity with L/S structures is prepared on substrateIt pole, can accurately control the L/S of Graphene electrodes to reach Nano grade, realize high light transmittance and strong flexible Graphene electrodes,And the preparation method technique is simple, processing procedure and material cost can be reduced without exposure imaging.
Referring to Fig. 4, Fig. 4 is the structural representation of the embodiment of substrate one of the present invention, and in a specific embodiment, the basePlate 10 includes Graphene electrodes A prepared by above-mentioned any means, and the substrate 10 can be the one of array base palte or color membrane substratesKind, specific method each embodiment as described above, here is omitted.
Referring to Fig. 5, Fig. 5 is the structural representation of the embodiment of inventive display one, the display 20 includes above-mentionedAny described substrate B, is specifically described referring to the respective embodiments described above, here is omitted.
In summary, it should be readily apparent to one skilled in the art that the present invention provide a kind of Graphene electrodes preparation method andSubstrate, display, by using nanometer embossing, the Graphene electrodes with L/S structures are prepared on substrate, can be accurateThe L/S of control Graphene electrodes reaches Nano grade, realizes high light transmittance and strong flexible Graphene electrodes, and the preparation methodTechnique is simple, and processing procedure and material cost can be reduced without exposure imaging.
Embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize thisThe equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlationsTechnical field, it is included within the scope of the present invention.