技术领域technical field
本发明涉及电极制备技术领域，尤其涉及石墨烯电极的图案化制备方法，还涉及采用该制备方法制得的石墨烯电极，以及具有该石墨烯电极的阵列基板。The present invention relates to the technical field of electrode preparation, in particular to a patterned preparation method for graphene electrodes, and also to a graphene electrode prepared by the preparation method, and an array substrate with the graphene electrode.
背景技术Background technique
石墨烯是由碳原子组成的单原子层材料，是目前世界上最薄的材料(单层膜厚为0.335nm)。石墨烯具有超高的电子迁移率(可达15000cm2/V s)、极好的机械性能、极高的刚性、较高的光线透过率(可达97.7％)以及超高的热导率(可达5000W/mK，大于铜的热导率的100倍)。另外，石墨烯还具有较高的比表面积和良好的柔性性能。由于石墨烯具有以上多重优点，因此，近年来其在工业领域得到了广泛的应用。尤其是在半导体行业和光电显示行业中，石墨烯的应用与发展极为迅速。Graphene is a monoatomic layer material composed of carbon atoms, and is currently the thinnest material in the world (the thickness of a single layer is 0.335nm). Graphene has ultra-high electron mobility (up to 15000cm2 /V s), excellent mechanical properties, high rigidity, high light transmittance (up to 97.7%) and ultra-high thermal conductivity (up to 5000W/mK, greater than 100 times the thermal conductivity of copper). In addition, graphene also has a high specific surface area and good flexibility. Because graphene has the above multiple advantages, it has been widely used in the industrial field in recent years. Especially in the semiconductor industry and optoelectronic display industry, the application and development of graphene is extremely rapid.
目前，制备图案化石墨烯电极的方法主要有以下两种。第一种方法：转移法。具体地，首先将石墨烯转移到所需基底上，然后利用微加工方法对石墨烯进行刻蚀，以形成所需图案。第二种方法：预先制备图案法。具体地，首先预先制备具有预设图案的金属材料，然后利用化学气相淀积法(即CVD法)在金属材料上形成石墨烯，最后将所形成的石墨烯转移到所需基底上。At present, there are mainly two methods for preparing patterned graphene electrodes. The first method: transfer method. Specifically, the graphene is first transferred to the desired substrate, and then the graphene is etched by microfabrication to form the desired pattern. The second method: pre-prepared pattern method. Specifically, a metal material with a preset pattern is prepared in advance, then graphene is formed on the metal material by chemical vapor deposition (ie, CVD method), and finally the formed graphene is transferred to a desired substrate.
上述制备石墨烯的方法的缺陷在于：过程复杂、图案化难度大、成本高，同时还降低了石墨烯的质量。The disadvantages of the above-mentioned method for preparing graphene are: complex process, difficult patterning, high cost, and also reduces the quality of graphene.
发明内容Contents of the invention
本发明所要解决的技术问题是现有石墨烯电极图案化制备过程复杂，难度大，生产成本高，限制了其在电子器件等领域的应用。The technical problem to be solved by the present invention is that the existing graphene electrode patterning preparation process is complex, difficult and high in production cost, which limits its application in the fields of electronic devices and the like.
为了解决上述技术问题，本发明提供了一种石墨烯电极的图案化制备方法，涉及采用该制备方法制得的石墨烯电极，以及具有该石墨烯电极的阵列基板。In order to solve the above-mentioned technical problems, the present invention provides a patterned preparation method of a graphene electrode, relates to a graphene electrode prepared by the preparation method, and an array substrate having the graphene electrode.
根据本发明的一个方面，提供了一种石墨烯电极的图案化制备方法，包括：According to one aspect of the present invention, a kind of patterned preparation method of graphene electrode is provided, comprising:
在基板上依次形成氧化石墨烯层和光刻胶层；sequentially forming a graphene oxide layer and a photoresist layer on the substrate;
利用掩膜工具对所述光刻胶层进行曝光；exposing the photoresist layer using a mask tool;
对曝光后的光刻胶层进行显影；developing the exposed photoresist layer;
对裸露的氧化石墨烯层进行还原；reduction of the exposed graphene oxide layer;
对剩余的曝光后的光刻胶进行剥离，以获得图案化的石墨烯电极。The remaining exposed photoresist was stripped to obtain patterned graphene electrodes.
优选的是，所获得的图案化的石墨烯电极所在层的上表面为与所述基板的上表面平行的平面。Preferably, the upper surface of the layer where the obtained patterned graphene electrodes are located is a plane parallel to the upper surface of the substrate.
优选的是，利用掩膜工具对所述光刻胶层进行曝光，包括：使紫外光透过具有透光区域和非透光区域的掩膜板照射所述光刻胶层，以对与所述透光区域相对应的光刻胶层进行曝光。Preferably, using a mask tool to expose the photoresist layer includes: allowing ultraviolet light to pass through a mask with a light-transmitting area and a non-light-transmitting area to irradiate the photoresist layer, so as to contrast with the photoresist layer. The photoresist layer corresponding to the light-transmitting region is exposed.
优选的是，所述光刻胶层采用负性光刻胶；对曝光后的光刻胶层进行显影，包括：利用显影液将与所述非透光区域相对应的光刻胶层溶解，以裸露出与所述非透光区域相对应的氧化石墨烯层。Preferably, the photoresist layer adopts a negative photoresist; developing the exposed photoresist layer includes: using a developing solution to dissolve the photoresist layer corresponding to the non-transparent region, to expose the graphene oxide layer corresponding to the non-light-transmitting region.
优选的是，所述光刻胶层采用正性光刻胶；对曝光后的光刻胶层进行显影，包括：利用显影液将与所述透光区域相对应的光刻胶层溶解，以裸露出与所述透光区域相对应的氧化石墨烯层。Preferably, the photoresist layer adopts a positive photoresist; developing the exposed photoresist layer includes: using a developing solution to dissolve the photoresist layer corresponding to the light-transmitting region, so that The graphene oxide layer corresponding to the light-transmitting region is exposed.
优选的是，利用溶液悬浮法、膨胀法或合成法形成所述氧化石墨烯层。Preferably, the graphene oxide layer is formed by a solution suspension method, an expansion method or a synthesis method.
优选的是，所述光刻胶为正性光刻胶或负性光刻胶。Preferably, the photoresist is a positive photoresist or a negative photoresist.
优选的是，利用狭缝涂布法、旋涂法或刮涂法形成所述光刻胶层。Preferably, the photoresist layer is formed using a slit coating method, a spin coating method or a blade coating method.
优选的是，利用水合肼、维生素C、苯二醇、硼氢化钠或pH为11～13的碱性溶液对所述裸露的氧化石墨烯层进行还原。Preferably, the exposed graphene oxide layer is reduced by using hydrazine hydrate, vitamin C, benzene glycol, sodium borohydride or an alkaline solution with a pH of 11-13.
根据本发明的另一个方面，提供了一种由上述石墨烯电极的图案化制备方法制备的石墨烯电极。According to another aspect of the present invention, a graphene electrode prepared by the patterned preparation method of the above-mentioned graphene electrode is provided.
根据本发明的再一个方面，提供了一种阵列基板，包括：According to still another aspect of the present invention, an array substrate is provided, including:
基板；Substrate;
形成于所述基板上的第一石墨烯电极层，其具有图案化的第一石墨烯电极；A first graphene electrode layer formed on the substrate, which has a patterned first graphene electrode;
形成于所述第一石墨烯电极层的第一绝缘层；A first insulating layer formed on the first graphene electrode layer;
形成于所述第一绝缘层上的有源层；an active layer formed on the first insulating layer;
形成于所述有源层上的第二石墨烯电极层，其具有图案化的第二石墨烯电极；A second graphene electrode layer formed on the active layer having a patterned second graphene electrode;
形成于所述第二石墨烯电极层上的第二绝缘层；以及a second insulating layer formed on the second graphene electrode layer; and
形成于所述第二绝缘层上的像素电极层；a pixel electrode layer formed on the second insulating layer;
其中，所述第一石墨烯电极和所述第二石墨烯电极均采用如权利要求1至8中任一项所述的石墨烯电极的图案化制备方法制备而成；并且，Wherein, the first graphene electrode and the second graphene electrode are prepared by the patterned preparation method of the graphene electrode as described in any one of claims 1 to 8; and,
所述第一石墨烯电极层的上表面和所述第二石墨烯电极层的上表面均为与所述基板的上表面平行的平面。Both the upper surface of the first graphene electrode layer and the upper surface of the second graphene electrode layer are planes parallel to the upper surface of the substrate.
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：Compared with the prior art, one or more embodiments in the above solutions may have the following advantages or beneficial effects:
1、本发明实施例提供的石墨烯电极图案化的制备方法主要基于氧化石墨烯材料较石墨烯材料易于图案化的特点，通过对氧化石墨烯进行还原的方式来制备石墨烯电极，制备过程简单、图案化难度小、成本低，同时有利于提高所制备的石墨烯电极的质量；1. The method for preparing graphene electrode patterning provided by the embodiment of the present invention is mainly based on the fact that graphene oxide material is easier to pattern than graphene material, and the graphene electrode is prepared by reducing graphene oxide, and the preparation process is simple , the difficulty of patterning is small, the cost is low, and it is beneficial to improve the quality of the prepared graphene electrode;
2、石墨烯电极所在层的上表面为与基板平行的平面，相对于现有图案化石墨烯电极制备过程中形成的凹凸不平的石墨烯电极层，该方法过程形成的平面的石墨烯电极层更有利于后续工艺的进行；2. The upper surface of the layer where the graphene electrode is located is a plane parallel to the substrate. Compared with the uneven graphene electrode layer formed in the preparation process of the existing patterned graphene electrode, the planar graphene electrode layer formed by this method It is more conducive to the subsequent process;
3、利用上述方法制备的图案化的石墨烯电极具有以下优点：成本低、应用范围广、更便于加工利用以及更好的导电性；3. The patterned graphene electrode prepared by the above method has the following advantages: low cost, wide application range, easier processing and utilization, and better conductivity;
4、利用上述制备的石墨烯电极制成的阵列基板具有如下优点：导电性能好、应用范围广、生产成本低、以及可应用于柔性显示平面的制作工艺中。4. The array substrate made of the graphene electrode prepared above has the following advantages: good electrical conductivity, wide application range, low production cost, and can be applied to the manufacturing process of flexible display planes.
本发明的其它特征和优点将在随后的说明书中阐述，并且部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
附图说明Description of drawings
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the description, and are used together with the embodiments of the present invention to explain the present invention, and do not constitute a limitation to the present invention. In the attached picture:
图1示出了根据本发明实施例一的石墨烯电极的图案化制备方法的工艺流程示意图；Fig. 1 shows the schematic process flow diagram of the patterned preparation method of the graphene electrode according to the embodiment of the present invention;
图2示出了根据本发明实施例二的石墨烯电极的图案化制备方法中对光刻胶层进行曝光显影的工艺流程示意图；2 shows a schematic diagram of a process flow for exposing and developing a photoresist layer in a patterned preparation method of a graphene electrode according to Embodiment 2 of the present invention;
图3示出了采用本发明实施例石墨烯电极的图案化制备方法制成的石墨烯电极的剖面示意图；Fig. 3 shows the schematic cross-sectional view of the graphene electrode that adopts the patterned preparation method of the graphene electrode of the embodiment of the present invention to make;
图4示出了本发明实施例具有图3中所示的石墨烯电极的阵列基板的结构示意图。FIG. 4 shows a schematic structural view of an array substrate having graphene electrodes shown in FIG. 3 according to an embodiment of the present invention.
具体实施方式detailed description
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.
现有的石墨烯电极的图案化制备方法中，石墨烯电极的图案化制备过程均比较复杂。例如，在转移法中，将石墨烯转移到基板上的过程及其复杂，且其成本较高。再例如，在预先制备图案法中，预先制备具有预设图案的金属材料的过程不仅复杂，其制备的石墨烯电极的图案单一，如果想改变其图案，需重新制备具有预设图案的金属材料，所以其制作成本很高，图案化难度也很大。因此，制得的图案化的石墨烯电极的应用范围受到限制。且现有的石墨烯电极的图案化的制备方法中制备的石墨烯电极层均为凹凸不平的平面，在对其进行进一步加工时，若想石墨烯电极层形成平面，则需要对石墨烯电极层进行适当填补，这样就加大了对石墨烯电极进行进一步加工的工艺过程难度。In the existing patterned preparation methods of graphene electrodes, the patterned preparation process of graphene electrodes is relatively complicated. For example, in the transfer method, the process of transferring graphene to the substrate is extremely complicated and its cost is high. For another example, in the pre-prepared pattern method, the process of pre-preparing a metal material with a preset pattern is not only complicated, but the pattern of the graphene electrode prepared by it is single. If you want to change its pattern, you need to re-prepare the metal material with a preset pattern. , so its production cost is very high, and patterning is also very difficult. Therefore, the application range of the fabricated patterned graphene electrodes is limited. And the graphene electrode layer prepared in the patterned preparation method of existing graphene electrode is uneven plane, when it is further processed, if want graphene electrode layer to form plane, then need to graphene electrode The layer is properly filled, which increases the difficulty of the further processing of the graphene electrode.
另外，在现有的石墨烯电极的图案化的制备过程中，石墨烯电极往往会出现一定量的损耗。例如，转移法中的刻蚀过程使用的刻蚀液对石墨烯有一定的腐蚀性。预先制备图案法中的化学气相沉积过程，对形成的石墨烯电极的质量也会产生一定的影响。由于上述对石墨烯电极质量的影响，从而影响了石墨烯电极的导电效果，进而影响利用石墨烯电极制成的产品质量。In addition, in the existing patterned preparation process of the graphene electrode, the graphene electrode often suffers a certain amount of loss. For example, the etchant used in the etching process in the transfer method is corrosive to graphene. The chemical vapor deposition process in the pre-patterning method will also have a certain impact on the quality of the formed graphene electrode. Due to the above-mentioned impact on the quality of the graphene electrode, the conductive effect of the graphene electrode is affected, which in turn affects the quality of products made of the graphene electrode.
因此，上述制备石墨烯的方法的缺陷在于：过程复杂、图案化难度大、成本高，同时还降低了石墨烯的质量。Therefore, the disadvantages of the above-mentioned method for preparing graphene are: complex process, difficult patterning, high cost, and also reduces the quality of graphene.
实施例一Embodiment one
为解决现有技术中存在的上述技术问题，本发明实施例提供了一种石墨烯电极的图案化的制备方法。In order to solve the above-mentioned technical problems existing in the prior art, an embodiment of the present invention provides a patterned preparation method of a graphene electrode.
图1示出了本发明实施例的石墨烯电极的图案化制备方法的步骤示意图。参照图1，本实施例石墨烯电极的图案化制备方法包括以下工艺步骤。FIG. 1 shows a schematic diagram of the steps of the patterned preparation method of a graphene electrode according to an embodiment of the present invention. Referring to FIG. 1 , the patterned preparation method of the graphene electrode in this embodiment includes the following process steps.
首先，在基板1上依次形成氧化石墨烯层2和光刻胶层3。如图1中的a工艺、b工艺和c工艺所示。具体地，先在需要形成石墨烯电极的基板1上形成一层均匀的氧化石墨烯，优选的，形成氧化石墨烯的方法为溶液悬浮法、旋涂法或狭缝涂布法。在形成氧化石墨烯层2后，再利用狭缝涂布法(Slit法)在已经形成的氧化石墨烯层2上形成一层均匀的光刻胶。光刻胶层3采用负性光刻胶。这里，负性光刻胶的被曝光的区域可以显示出影像。其中，光刻胶的形成方法不限于狭缝涂布法。First, a graphene oxide layer 2 and a photoresist layer 3 are sequentially formed on a substrate 1 . Figure 1 shows a process, b process and c process. Specifically, a uniform layer of graphene oxide is first formed on the substrate 1 on which the graphene electrode needs to be formed. Preferably, the method of forming graphene oxide is a solution suspension method, a spin coating method or a slit coating method. After the graphene oxide layer 2 is formed, a layer of uniform photoresist is formed on the formed graphene oxide layer 2 by using a slit coating method (Slit method). The photoresist layer 3 adopts negative photoresist. Here, the exposed areas of the negative-tone photoresist can show an image. However, the method of forming the photoresist is not limited to the slit coating method.
其次，利用掩膜工具对光刻胶层3进行曝光。如图1中的d工艺所示。具体地，将掩膜工具平行设置于光刻胶层3上方，然后使紫外光垂直透过掩膜工具照射到光刻胶层3上，以对光刻胶层3进行充分曝光。优选地，掩膜工具为掩膜板4。掩膜板上具有透光区域和非透光区域。在设置掩膜板4时，掩膜板4的非透光区域形成的图案与基板1上所要形成石墨烯电极图案的位置在垂直方向上重合。紫外光垂直透过掩膜板的透光区域，对透光区域对应的负性光刻胶进行充分曝光。曝光完成后，撤掉掩膜板4。Secondly, the photoresist layer 3 is exposed by using a mask tool. As shown in d process in Fig. 1. Specifically, the mask tool is arranged in parallel above the photoresist layer 3 , and then ultraviolet light is irradiated onto the photoresist layer 3 through the mask tool vertically, so as to fully expose the photoresist layer 3 . Preferably, the mask tool is a mask plate 4 . The mask plate has a light-transmitting area and a non-light-transmitting area. When the mask plate 4 is set, the pattern formed in the non-transparent region of the mask plate 4 coincides with the position on the substrate 1 where the graphene electrode pattern is to be formed in the vertical direction. The ultraviolet light vertically passes through the light-transmitting area of the mask plate to fully expose the negative photoresist corresponding to the light-transmitting area. After the exposure is completed, the mask plate 4 is removed.
再次，对曝光后的光刻胶层3进行显影。具体地，选取能够对负性光刻胶进行显影的显影液。利用显影液对非曝光区域对应的负性光刻胶进行充分溶解，以裸露出非曝光区域对应的氧化石墨烯。而曝光区域对应的负性光刻胶在显影过程发生交联固化，不能被显影液溶解。因此，曝光区域对应的光刻胶在显影过程无变化。此时，裸露出的氧化石墨烯形成的图案位置即为所要得到的石墨烯电极的图案位置。Again, the exposed photoresist layer 3 is developed. Specifically, a developer capable of developing the negative photoresist is selected. A developer is used to fully dissolve the negative photoresist corresponding to the non-exposed area, so as to expose the graphene oxide corresponding to the non-exposed area. The negative photoresist corresponding to the exposed area is cross-linked and solidified during the development process, and cannot be dissolved by the developer. Therefore, the photoresist corresponding to the exposed area does not change during the developing process. At this time, the pattern position formed by the exposed graphene oxide is the pattern position of the graphene electrode to be obtained.
优选地，显影液为氢氧化钾。该显影液可以对负性光刻胶进行显影。如图1中的e工艺所示。其中，7部位和8部位分别具体表示负性光刻胶层上相邻的对应非曝光区域和曝光区域的部位。7部位在显影液氢氧化钾的作用下被充分溶解掉，裸露出7部位下方对应的氧化石墨烯。2部位由于被紫外光曝光，而曝光后的负性光刻胶在显影过程发生交联固化，不能被显影液溶解，因此，负性光刻胶的2部位下方对应的氧化石墨烯未裸露出来。Preferably, the developer is potassium hydroxide. The developer can develop negative photoresists. As shown in e-process in Fig. 1. Wherein, the 7th position and the 8th position specifically represent the adjacent positions corresponding to the non-exposed area and the exposed area on the negative photoresist layer respectively. The 7th part is fully dissolved under the action of the developer potassium hydroxide, exposing the corresponding graphene oxide below the 7th part. The 2 parts are exposed by ultraviolet light, and the exposed negative photoresist is cross-linked and solidified during the development process, and cannot be dissolved by the developer solution. Therefore, the corresponding graphene oxide under the 2 parts of the negative photoresist is not exposed. .
然后，对裸露的氧化石墨烯进行还原，将氧化石墨烯还原为石墨烯。如图1中的f工艺所示。具体地，用还原剂对显影后裸露在外的氧化石墨烯进行充分还原，将氧化石墨烯还原为石墨烯，而由于未裸露在外的氧化石墨烯上附有光刻胶，未接触还原剂，因此未被还原。优选地，还原剂为水合肼、维生素C、苯二醇、硼氢化钠或pH为11～13的碱性溶液。优选的，碱性溶液为NaOH溶液。最后，对剩余的光刻胶进行剥离，以获得图案化的石墨烯电极。具体地，选取能够剥离负性光刻胶的剥离液(Stripper液)，利用剥离液(Stripper液)将显影液溶解后剩下的光刻胶层(即曝光后的光刻胶层)进行剥离。剥离后，将石墨烯电极上残留的剥离液水洗掉，即获得图案化的石墨烯电极。如图1中的g工艺所示。其中，6部位为氧化石墨烯材料，5部位为石墨烯材料。石墨烯材料形成一定的图案，即为具有一定图案的石墨烯电极。Then, the bare graphene oxide is reduced to reduce the graphene oxide to graphene. As shown in Figure 1 f process. Specifically, the exposed graphene oxide after development is fully reduced with a reducing agent, and the graphene oxide is reduced to graphene, and since the unexposed graphene oxide is attached with a photoresist, there is no contact with the reducing agent, so was not restored. Preferably, the reducing agent is hydrazine hydrate, vitamin C, benzene glycol, sodium borohydride or an alkaline solution with a pH of 11-13. Preferably, the alkaline solution is NaOH solution. Finally, the remaining photoresist was stripped to obtain patterned graphene electrodes. Specifically, select a stripper solution (Stripper solution) that can strip negative photoresist, and use the stripper solution (Stripper solution) to remove the remaining photoresist layer (ie, the exposed photoresist layer) after the developer is dissolved. . After the stripping, the residual stripping solution on the graphene electrode is washed off with water to obtain a patterned graphene electrode. As shown in the g process in Figure 1. Among them, 6 parts are graphene oxide materials, and 5 parts are graphene materials. The graphene material forms a certain pattern, which is a graphene electrode with a certain pattern.
应用上述制备方法形成的石墨烯电极的上表面与剩余的氧化石墨烯的上表面平齐。即由图案化的石墨烯电极和剩余的氧化石墨烯形成的层的平面与基板1的上表面平行。The upper surface of the graphene electrode formed by the above preparation method is flush with the upper surface of the remaining graphene oxide. That is, the plane of the layer formed by the patterned graphene electrodes and the remaining graphene oxide is parallel to the upper surface of the substrate 1 .
应用本实施例，由于将石墨烯材料直接在基板1上形成的工艺过程比氧化石墨烯在基板1上的形成工艺过程复杂的多，因此该方法采用在基板1上形成氧化石墨烯层2，再在氧化石墨烯层2上形成光刻胶层3，通过对光刻胶层3的曝光显影，并结合对裸露的氧化石墨烯进行还原刻蚀，来形成图案化的石墨烯电极。Applying this embodiment, since the process of forming the graphene material directly on the substrate 1 is much more complicated than the process of forming graphene oxide on the substrate 1, the method adopts the method of forming a graphene oxide layer 2 on the substrate 1, Then, a photoresist layer 3 is formed on the graphene oxide layer 2, and a patterned graphene electrode is formed by exposing and developing the photoresist layer 3 and performing reduction etching on the exposed graphene oxide.
可见，本实施例方法的制备过程相较于现有的石墨烯电极的图案化的制备过程简单的多，且其降低了图案化石墨烯电极的过程的难度。同时还降低了制备图案化的石墨烯电极的制作成本。It can be seen that the preparation process of the method of this embodiment is much simpler than the existing patterned preparation process of graphene electrodes, and it reduces the difficulty of the process of patterning graphene electrodes. At the same time, the fabrication cost of patterned graphene electrodes is also reduced.
另外，在本实施例中，形成的图案化的石墨烯电极所在层的上表面为与基板1平行的平面。与现有方法形成的上表面为凹凸不平的石墨烯电极层不同，该方法行成的石墨烯电极所在层在进行后续加工时，无需对石墨烯电极所在层进行填平。也就是说，简化了对石墨烯电极进行进一步加工的工艺过程，扩大了石墨烯电极的应用范围。In addition, in this embodiment, the upper surface of the layer where the patterned graphene electrodes are formed is a plane parallel to the substrate 1 . Different from the graphene electrode layer whose upper surface is uneven formed by the existing method, the layer where the graphene electrode is located does not need to be filled and leveled when the layer where the graphene electrode is located is subjected to subsequent processing. That is to say, the process of further processing the graphene electrode is simplified, and the application range of the graphene electrode is expanded.
实施例二Embodiment two
相应的，图2示出了另一本发明实施例的石墨烯电极的图案化制备方法中对光刻胶层进行曝光显影的工艺流程示意图。参照图2，本实施例与实施例一不同之处在于：Correspondingly, FIG. 2 shows a schematic flow chart of exposing and developing the photoresist layer in the patterned preparation method of the graphene electrode according to another embodiment of the present invention. Referring to Fig. 2, the differences between this embodiment and embodiment one are:
在形成氧化石墨烯层和光刻胶层的过程中，利用狭缝涂布法(Slit法)在氧化石墨烯层上形成的光刻胶层3采用正性光刻胶。正性光刻胶的非曝光区域可以显示出影像。In the process of forming the graphene oxide layer and the photoresist layer, a positive photoresist is used for the photoresist layer 3 formed on the graphene oxide layer by using a slit coating method (Slit method). The non-exposed areas of the positive photoresist can show the image.
在曝光过程中，如图2中的d＇工艺所示，将掩膜工具平行设置于正性光刻胶层上方，然后使紫外光垂直透过掩膜工具照射到光刻胶层3上，以对光刻胶层3进行充分曝光。优选地，掩膜工具为掩膜板4，掩膜板4上具有透光区域和非透光区域。在设置掩膜工具时，掩膜板4的透光区域行成的图案与基板1上所要形成石墨烯电极图案的位置在垂直方向上重合。紫外光垂直透过掩膜板的透光区域，对掩膜板4的透光区域对应的正性光刻胶进行充分曝光。In the exposure process, as shown in the d' process in Figure 2, the mask tool is arranged in parallel above the positive photoresist layer, and then the ultraviolet light is irradiated on the photoresist layer 3 through the mask tool vertically, In order to fully expose the photoresist layer 3 . Preferably, the mask tool is a mask plate 4 with a light-transmitting area and a non-light-transmitting area on the mask plate 4 . When the mask tool is set, the pattern formed in the light-transmitting area of the mask plate 4 coincides with the position on the substrate 1 where the graphene electrode pattern is to be formed in the vertical direction. The ultraviolet light vertically passes through the light-transmitting area of the mask plate to fully expose the positive photoresist corresponding to the light-transmitting area of the mask plate 4 .
在显影过程中，选取能够对正性光刻胶进行显影的显影液，利用显影液对曝光区域光刻胶进行充分溶解，以裸露出光刻胶曝光区域对应的氧化石墨烯。而光刻胶的非曝光区域对应的正性光刻胶在显影过程发生交联固化，不能被显影液溶解，因此，非曝光区域的光刻胶显影过程无变化。During the development process, a developer capable of developing the positive photoresist is selected, and the photoresist in the exposure area is fully dissolved by the developer to expose the graphene oxide corresponding to the exposure area of the photoresist. The positive photoresist corresponding to the non-exposed area of the photoresist is cross-linked and solidified during the development process, and cannot be dissolved by the developer solution. Therefore, the development process of the photoresist in the non-exposed area remains unchanged.
优选地，显影液为四甲基氢氧化铵。该显影液可对正性光刻胶进行显影。如图2中的e＇工艺所示。其中，7＇部位和8＇部位分别具体表示正性光刻胶层上的相邻的一个非曝光区域和曝光区域的部位。8＇部位由于被紫外光曝光，而曝光后的正性光刻胶在显影过程被充分溶解，因此，8＇部位在显影液四甲基氢氧化铵的充分作用下被溶解掉，裸露出光刻胶的8＇部位下方对应的氧化石墨烯区域。光刻胶的7＇部位在显影过程发生交联固化，不能被显影液溶解，因此，正性光刻胶的7＇部位下方对应的氧化石墨烯未裸露出来。Preferably, the developing solution is tetramethylammonium hydroxide. The developer can develop the positive photoresist. Figure 2 e' process as shown. Wherein, 7' and 8' respectively specifically represent an adjacent non-exposed area and an exposed area on the positive photoresist layer. The 8' part is exposed by ultraviolet light, and the exposed positive photoresist is fully dissolved in the development process, so the 8' part is dissolved under the full action of the developing solution tetramethylammonium hydroxide, and the exposed photoresist is exposed. The corresponding graphene oxide region under the 8' part of the resist. The 7' part of the photoresist is cross-linked and solidified during the development process, and cannot be dissolved by the developer. Therefore, the corresponding graphene oxide under the 7' part of the positive photoresist is not exposed.
对裸露的氧化石墨烯层进行还原的过程与实施例一完全相同。The process of reducing the exposed graphene oxide layer is exactly the same as in Example 1.
在剥离剩余光刻胶的过程中，选取能够剥离正性光刻胶的剥离液(Stripper液)，利用剥离液(Stripper液)将显影液溶解后剩下的光刻胶(即非曝光后的光刻胶层)进行剥离。In the process of stripping the remaining photoresist, select a stripper solution (Stripper solution) that can strip the positive photoresist, and use the stripper solution (Stripper solution) to dissolve the remaining photoresist (ie, the non-exposed photoresist) photoresist layer) for stripping.
本实施例与实施例一的基本原理相同，以及所得到的有益效果也相同，因此在此处对上述内容不再进行赘述。The basic principle of this embodiment is the same as that of the first embodiment, and the obtained beneficial effects are also the same, so the above content will not be repeated here.
实施例三Embodiment three
相应地，本发明实施例还提供一种利用实施例一或实施例二的石墨烯电极的图案化的制备方法制备的石墨烯电极。Correspondingly, the embodiment of the present invention also provides a graphene electrode prepared by using the graphene electrode patterning method of the first embodiment or the second embodiment.
图3示出了本发明实施例利用石墨烯电极的图案化制备方法制成的图案化石墨烯电极的剖面示意图。FIG. 3 shows a schematic cross-sectional view of a patterned graphene electrode manufactured by using a patterned graphene electrode preparation method according to an embodiment of the present invention.
参照图3，本实施例石墨烯电极位于石墨烯电极层。利用上述方法制备的图案化的石墨烯电极具有以下优点：成本低、应用范围广、更便于加工利用以及更好的导电性。Referring to FIG. 3 , the graphene electrode of this embodiment is located on the graphene electrode layer. The patterned graphene electrode prepared by the above method has the following advantages: low cost, wide application range, easier processing and utilization, and better conductivity.
这里，石墨烯电极所在层的上表面平行于基板1的上表面。应用本实施例的图案化的石墨烯电极，由于石墨烯电极层的上表面为与基板1平行的平面，因此，对该石墨烯电极层进行进一步加工时，就无需对石墨烯电极层的上表面进行填平，简化了产品的生产过程。另外，该石墨烯电极可应用于生产柔性显示平面，扩大了石墨烯电极的应用范围。Here, the upper surface of the layer where the graphene electrodes are located is parallel to the upper surface of the substrate 1 . Apply the patterned graphene electrode of the present embodiment, because the upper surface of graphene electrode layer is the plane parallel with substrate 1, therefore, when this graphene electrode layer is further processed, just need not to the upper surface of graphene electrode layer. The surface is filled and leveled, which simplifies the production process of the product. In addition, the graphene electrode can be applied to the production of flexible display planes, expanding the application range of the graphene electrode.
实施例四Embodiment four
相应地，本发明实施例还提供一种利用实施例三中的石墨烯电极制成的阵列基板1。Correspondingly, the embodiment of the present invention also provides an array substrate 1 made by using the graphene electrode in the third embodiment.
图4示出了本发明实施例利用上述石墨烯电极制成的阵列基板1结构示意图。FIG. 4 shows a schematic structural view of the array substrate 1 made by using the above graphene electrodes according to an embodiment of the present invention.
参见图4，本发明实施例阵列基板1包括基板1、第一石墨烯电极层9、第一绝缘层10、有源层11、第二石墨烯电极层12、第二绝缘层13和像素电极层14。Referring to FIG. 4, an array substrate 1 according to an embodiment of the present invention includes a substrate 1, a first graphene electrode layer 9, a first insulating layer 10, an active layer 11, a second graphene electrode layer 12, a second insulating layer 13 and a pixel electrode Layer 14.
具体地，第一石墨烯电极层9形成于基板1上，并具有图案化的第一石墨烯电极。第一石墨烯电极上形成第一绝缘层10。第一绝缘层10上形成有源层11，有源层11上形成第二石墨烯电极层12，第二石墨烯电极层12上形成第二绝缘层13而第二绝缘层13上形成有像素电极层14。其中，第一石墨烯电极和第二石墨烯电极均为如实施例一或实施例二的石墨烯电极的图案化制备方法制备而成的。并且，形成的第一石墨烯电极层9的上表面和第二石墨烯电极层12的上表面均为与基板1的上表面平行的平面。Specifically, the first graphene electrode layer 9 is formed on the substrate 1 and has a patterned first graphene electrode. A first insulating layer 10 is formed on the first graphene electrode. An active layer 11 is formed on the first insulating layer 10, a second graphene electrode layer 12 is formed on the active layer 11, a second insulating layer 13 is formed on the second graphene electrode layer 12, and pixels are formed on the second insulating layer 13 Electrode layer 14. Wherein, both the first graphene electrode and the second graphene electrode are prepared by the patterned preparation method of the graphene electrode in Embodiment 1 or Embodiment 2. Moreover, the upper surface of the formed first graphene electrode layer 9 and the upper surface of the second graphene electrode layer 12 are both planes parallel to the upper surface of the substrate 1 .
应用本实施例的基板1，由于石墨烯电极的导电性远远高于金属的导电性，因此，该阵列基板1的导电性优于用金属材料作为电极的阵列基板1。另外，由于石墨烯材料具有良好的柔性性能，因此该阵列基板1还可用于制备柔性显示平面，从而扩大了该阵列基板1的应用范围。Using the substrate 1 of this embodiment, since the conductivity of the graphene electrode is much higher than that of metal, the conductivity of the array substrate 1 is better than that of the array substrate 1 using metal materials as electrodes. In addition, since the graphene material has good flexibility, the array substrate 1 can also be used to prepare a flexible display plane, thereby expanding the application range of the array substrate 1 .
进一步地，由于第一石墨烯电极层9的上表面和第二石墨烯电极层12的上表面均为与基板1的上表面平行的平面，与传统形成的上表面为凹凸不平的石墨烯电极层不同，因此，该阵列基板1形成第一绝缘层10和第二绝缘层13的工艺会更加简便，有利于对该阵列基板1进行量化生产。Further, since the upper surface of the first graphene electrode layer 9 and the upper surface of the second graphene electrode layer 12 are planes parallel to the upper surface of the substrate 1, it is a graphene electrode with unevenness on the traditional upper surface. Therefore, the process of forming the first insulating layer 10 and the second insulating layer 13 on the array substrate 1 will be simpler, which is beneficial to the quantitative production of the array substrate 1 .
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的保护范围，仍须以所附的权利要求书所界定的范围为准。Although the embodiments disclosed in the present invention are as above, the described content is only an embodiment adopted for the convenience of understanding the present invention, and is not intended to limit the present invention. Any person skilled in the technical field to which the present invention belongs can make any modification and change in the implementation form and details without departing from the spirit and scope disclosed in the present invention, but the protection scope of the present invention remains within the scope of the present invention. The scope defined by the appended claims shall prevail.
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| WD01 | Invention patent application deemed withdrawn after publication | Application publication date:20170829 | |
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