The application be international filing date be on 2 7th, 2013, international application no be PCT/US2013/025035, inThe patent of invention Shen of the Application No. 201380017841.7 of state's thenational phase, entitled " flexible glass of the processing with carrier "Divisional application please.
The U.S. Provisional Application Serial No. the 61/th that the application requires to submit for 8th for 2 months for 2012 according to 35U.S.C. § 119The benefit of priority of No. 596727, and be integrally hereby incorporated by its content based on its content and by quoting.
The content of the invention
It is (such as another the present invention relates to the thin plate of such as flexible glass plate is bonded into carrier initially through Van der Waals forOne glass plate), then keeping processing thin plate/carrier, to be formed on device, (such as electronics or display device, electronics showThe part of showing device, OLED material, the structure of photovoltage (PV), or thin film transistor (TFT)) after remove the ability of thin plateIncrease the bond strength of some regions simultaneously.At least a portion of thin glass is bonded to carrier so that prevent device technique fluidInto the probability between thin plate and carrier, thus reducing pollution downstream process, i.e., the bonded seal part between thin plate and carrierSealed, and in some preferred embodiments, the seal around the outside of product thus prevent liquid or gas invade orDischarge any region of sealing article.
A kind of commercial benefit of this method is that manufacturer can utilize its existing capital investment on a processing device, togetherWhen obtain thin film transistor (TFT) (TFT) electronic device for such as PV, OLED, LCD and patterning glass plate advantage.ThisOutside, this method can realize technological flexibility, including：Cleaning and surface for thin plate and carrier prepare to be bonded；WithStrengthen being bonded in bond area thin plate and carrier bracket；For in nonbonding (or reduction/low-intensity) region thin plate and carrierReleasable property；And for cutting thin plate in order to being extracted from carrier.Strictly, nonbonding region may include thin plate and carrierBetween certain bonding, but the bonding it is weak enough with allow thin plate easily from carrier remove without damage thin plate；In whole sheetIn open, only for convenient, these regions are referred to as nonbonding region.Substantially, nonbonding region has significantly less than bondingThe bond strength of region bond strength.
In some device techniques, the temperature and/or vacuum environment close to 600 DEG C or bigger can be used.These conditions are limitedThe workable material of system simultaneously proposes high request to carrier/thin plate.Inventor have discovered that by make to be captured in thin plate and carrier itBetween gas flow can at least increase the ability that product (including being bonded to the thin plate of carrier) bears these conditions.Various ways can be usedMake the gas of trapping minimum, for example, pass through：It is subjected to annealing to it after releasing layer depositing operation in carrier/thin glass plate, thusSubsequent deflation is minimum after the annealing has bonded together thin plate and carrier-and the annealing can be positioned in carrier/thin glass plateCompleted before or after being in contact with each other；Thin plate and carrier are initially bonded each other in vacuum environment；By using for example ventilatingBar and/or groove provide the path that gas is escaped between thin plate and carrier；Properly select cleaning/etching solution；And controlThe surface roughness of carrier and/or thin plate processed.It is every kind of in the aforementioned manner for minimizing captured gas that can be used alone, or combineAny one or more of other manner for minimizing trapping air and/or other gases is used.
Middle elaboration will be described in detail below in further feature and advantage, and to those skilled in the art will partlyBe readily appreciated that from specification or by putting into practice written explanation and accompanying drawing in example and as limited in appended claimsPresent invention recognizes that.It should be understood that foregoing overall description and it is described in detail below be all only the present invention example, and accompanying drawing provides reasonSolve general introduction or the framework of the characteristic and feature of the present invention for required protection.
Including accompanying drawing to provide further understanding for the principle of the invention, accompanying drawing includes in this specification and constitutes the explanationA part for book.Accompanying drawing shows one or more embodiments, is used to explain principle of the invention and behaviour together with specificationMake.It should be understood that the various features of the invention disclosed in specification and in accompanying drawing can be used alone and be applied in combination.For example, thisEach feature of invention can be combined according to following each side.
According to first aspect there is provided a kind of method that thin plate is bonded to carrier, including：
A) thin plate and carrier are provided；
B) thin plate is bonded to carrier；
C) gas trapped after at least one in processing thin plate and carrier is so that be bonded between thin plate and carrier is mostIt is few.
According to second aspect there is provided a kind of method of first aspect, wherein step (c) is performed before step (b), andIncluding releasing layer is deposited at least one in thin plate and carrier, and pre- higher than when device is subsequently machined on thin plateBy at least one annealing in thin plate and carrier at the high temperature of phase temperature.
According to the third aspect, there is provided a kind of method of first aspect, in addition to step (d)：To in thin plate and carrier extremelyFew one provides surface treatment so as to form nonbonding region, and wherein step (c) includes being at least one in thin plate and carrierIndividual offer outer perimeter edge of at least one from thin plate and carrier extends to the groove in nonbonding region.
According to fourth aspect there is provided a kind of method of the third aspect, wherein step (b) is carried out in vacuum environment, and stepSuddenly (c) be additionally included in thin plate and carrier be bonded after but seal the groove before vacuum environment removal at them.
According to the 5th aspect there is provided a kind of method of fourth aspect, wherein the sealed bundle include it is following in one or manyIt is individual：With frit filling groove and heated frit；With can thermosetting resin filling groove and and then heated resin.
According to the 6th aspect there is provided a kind of method of first aspect, in addition to：Step (d)：To in thin plate and carrier extremelyFew one provides surface treatment so as to form nonbonding region during step (b), and wherein step (c) includes using fluid cleaningAt least one in thin plate and carrier, fluid makes minimum in the residue that gas is transferred with post-processing temperature when rinsing.
According to the 7th aspect there is provided a kind of method of first aspect, wherein step (c) is carried out simultaneously with step (b), and is wrappedInclude in vacuum environment and thin plate is bonded to carrier, and water vapour is flowed into vacuum environment.
According to eighth aspect there is provided a kind of method of first aspect, wherein step (b) produces key between thin plate and carrierRegion is closed, and also includes step (d)：Heat is applied by para-linkage region or pressure increase between thin plate and carrier be bonded it is strongDegree.
According to the 9th aspect there is provided a kind of method of eighth aspect, wherein step (d) is included in 400 to 625 DEG C of temperatureLower combustion thin plate and carrier.
According to the tenth aspect there is provided a kind of product, including：
Carrier；
Thin plate；
Bond area, the bond area has outer perimeter, and thin plate is remained into carrier；
Nonbonding region, the nonbonding region is arranged to be surrounded by bond area, wherein in thin plate and carrier at leastOne includes the extension from nonbonding region and causes the groove of welding region outer perimeter.
According to the tenth one side, there is provided the product of the tenth aspect, wherein trench fill oil seal material.
According to the 12nd aspect there is provided a kind of method of tenth one side, wherein, encapsulant is selected from：Frit；SinteringFrit；Heat reactive resin；Heat reactive resin；UV solidified resins；Ultraviolet curable resin；Polyimides；From glass plate and loadThe material of one of body fusing.
According to the 13rd aspect, there is provided a kind of required portion that thin plate is removed from the thin plate that carrier is bonded to by bond areaThe method divided, the bond area surrounds nonbonding region, and the thin plate has thickness, including：
Circumference passage is formed, the circumference of part needed for the circumference passage is limited, wherein the circumference passage is setPut in the nonbonding region and depth >=lamella thickness 50%.
According to fourteenth aspect there is provided the method for a kind of 13rd aspect, in addition to：Form two release ventilation holes, instituteState release ventilation hole neither parallel to each other nor conllinear in the nonbonding region.
According to the 15th aspect there is provided the method for a kind of 13rd aspect, in addition to：
Two release ventilation holes are formed, described two release ventilation holes are parallel to each other or conllinear, wherein each releasePassage extends in the bond area and nonbonding region, and
The release ventilation hole is propagated through both the thin plate and the carrier, so as to remove the thin plate and carrierPermission needed for part slip away the part of the carrier.
According to the 16th aspect there is provided the method for a kind of 15th aspect, wherein, the release ventilation hole is in the circumferenceContacted in 500 microns of passage but not with the circumference passage.
According to the 17th aspect there is provided the method for either side in a kind of 13 to 16 aspects, in addition to：Use laserForm at least one in passage.
According to the 18th aspect there is provided a kind of method for forming the device based on thin plate, including：
Thin plate is attached to by carrier by the bond area around nonbonding region；
The thin plate is handled with the forming apparatus on the nonbonding region；And
Method according to either side in aspect 13 to 17 removes the required part of the thin plate.
According to the 19th aspect there is provided a kind of cutting equipment, including：
Head, the head has multiple holes；
Lasing light emitter, the first hole that the lasing light emitter is, optionally, coupled in the multiple hole passes through so as to which laser beam be conveyedFirst hole；And
Cooling fluid source, with least the second hole in the multiple hole and at least, the 3rd hole fluid connects the cooling fluid sourceIt is logical, wherein extending to the First Line in second hole relative to from first hole from first hole extends to the 3rd holeThe second line set with first angle.
According to the 20th aspect there is provided the cutting equipment of a kind of 19th aspect, wherein first angle is 90 degree, wherein coldBut fluid source is also in fluid communication with the 5th hole in the 4th hole and the multiple hole in the multiple hole, and in addition from described theThe 3rd line that one hole extends to the 4th hole is substantially collinear with the First Line, and extends to described from first hole4th line in five holes is substantially collinear with second line.
According to the 20th one side there is provided the cutting equipment of a kind of 19th aspect, wherein the first angle is differentIn 90 degree of angles or its multiple.
According to the 22nd aspect there is provided a kind of cutting equipment, including：
Head, the head has multiple holes；
Lasing light emitter, the first hole that the lasing light emitter is, optionally, coupled in the multiple hole passes through so as to which laser beam be conveyedFirst hole；And
Cooling fluid source, the cooling fluid source is in fluid communication with least the second hole in the multiple hole,
Wherein described head is rotatable.
According to the 23rd aspect there is provided the cutting equipment of either side in 19 to 22 aspects, wherein described coldBut fluid source is compressed air source.
According to twenty-fourth aspect there is provided the cutting equipment of either side in 19 to 23 aspects, its mesopore has≤ 1mm diameter.
According to the 25th aspect there is provided a kind of cutting method, including：
Cutting equipment according to either side in the 19th to 21,23,24 aspects is provided；
By laser beam conveying by first hole, and the same of the head is being moved along the first direction along the First LineWhen by cooling fluid conveying pass through second hole；
Cut off conveying of the cooling fluid by second hole；
The 3rd hole is delivered the fluid through while the head is moved in a second direction along second line；
Cut off conveying of the cooling fluid by the 3rd hole.
According to the 26th aspect there is provided a kind of cutting method, including：
Cutting equipment according to the 22nd aspect is provided；
By laser beam conveying by first hole, and by cooling fluid while the head is moved along the first directionConveying passes through second hole；
Rotate the head and to move the head into the second direction of non-zero angle relative to the first direction.
According to the 27th aspect there is provided a kind of product, including：
Carrier；
Thin plate；
Bond area, the bond area is formed around the circumference of the thin plate, and the thin plate is remained into the carrier；
Releasing layer, the releasing layer is arranged to be surrounded by the bond area, wherein the releasing layer first by making a reservation forAt a temperature of be not bonded to the thin plate but the material of the thin plate be bonded under the second predetermined temperature and be made, wherein described secondPredetermined temperature is higher than first predetermined temperature.
According to twenty-eighth aspect there is provided the product of a kind of 27th aspect, wherein, the releasing layer includes described carryThere is the silicon fiml of 100 to 500nm thick degree, wherein the surface of the dorsad described carrier of the silicon fiml makes its surface on the surface of bodyDehydrogenation.
According to the 29th aspect there is provided a kind of product of twenty-eighth aspect, wherein, the releasing layer also includes describedThin plate towards the metal film on the surface of the carrier, wherein the metal film has 100 to 500nm thickness.
According to the 30th aspect there is provided the product of a kind of 29th aspect, wherein, the metal is selected from will be >=600With the race of silicon formation silicide at a temperature of DEG C, and cause it that there is Ra >=2nm surface roughness due to sputtering crystallite dimension.
According to the 30th one side there is provided the product of a kind of 29th or 30 aspects, wherein, the metal is selected fromAluminium, molybdenum and tungsten.
According to the 32nd aspect there is provided the product of either side in a kind of 27 to 30 one side, wherein describedThin plate is the glass of thickness≤300 micron.
According to the 33rd aspect there is provided the product of either side in a kind of 27 to 32 aspects, wherein describedCarrier is the glass of thickness >=50 micron.
According to the 34th aspect there is provided the product of either side in a kind of 27 to 33 aspects, wherein describedThe combination thickness of thin plate and the carrier is 125 to 700 microns.
According to the 35th aspect there is provided it is a kind of from either side in terms of 27 to 34 described in productThe method for forming multiple required parts, including：
The releasing layer is locally heated to >=temperature of second predetermined temperature to be to form multiple bonding profile lines.
According to the 36th aspect there is provided the method for a kind of 35th aspect, in addition to：Using not making the releasing layerBe subjected to higher than first predetermined temperature temperature technique on the thin plate forming apparatus.
According to the 37th aspect there is provided the method for a kind of 35th aspect, in addition to：According to claim ten three toPart needed for the method for either side is removed in 17 aspects.
According to the 38th aspect there is provided a kind of method of the forming apparatus on thin plate, including：
At least a portion of described device is worked on the thin plate of product, wherein the product includes thickness≤300Micron and be bonded to thickness >=100 micron carrier thin plate, and also described bonding include it is multiple with a bond strengthFirst area and the second area with the second bond strength for being significantly higher than first bond strength；
At least described carrier of the product is cut, so that the first product part and the second product part are formed, whereinFirst product part includes at least a portion of one in the multiple first area and the second area；
The extention of described device is worked on first product part.
According to the 39th aspect there is provided the method for a kind of 38th aspect, wherein, it is described to cut along secondth areaLine in domain is carried out.
According to the 40th aspect there is provided the method for a kind of 38th or 39 aspects, wherein, performing the cutting makesObtaining first product part includes at least a portion around its circumference of the second area.
According to the 40th one side there is provided the method for either side in a kind of 38 to 40 aspects, in addition to：From such asFirst product part in aspect 13 to 17 described in either side removes at least a portion of the thin plate.
According to the 42nd aspect, in first to the 18th or 27 to 40 in one side in either side, thin plateIt is glass plate, and carrier is glass plate.
Embodiment
In the following detailed description, in order to illustrate rather than the purpose of limitation, showing for specific detail is disclosed by illustratingExample embodiment so as to be fully understood by the present invention each principle.But, one of ordinary skill in the art is using for reference this paper institutesAfter the content of announcement, for them it is readily apparent that can without departing from detail disclosed herein other implementationsExample puts into practice the present invention.In addition, omitting to the description of known devices, method and material so that the description of the principle of the invention is clear.Finally, identical component is denoted by the same reference numerals as far as possible.
Scope can be expressed as from " about " particular value and/or to " about " another particular value herein.When represent soWhen one scope, another embodiment is included from a particular value and/or to another particular value.Similarly, when before useWhen sewing " about " expression numerical value for approximation, it should be appreciated that concrete numerical value forms another embodiment.It should also be understood that each scopeEnd value either connects with another end value and is also independently of another end value, all meaningful.
Directional terminology used herein-for example upper and lower, right, left, forward and backward, top, bottom-provide only referring to accompanying drawing andIt is not intended to imply that absolute direction.
Clearly indicate unless otherwise, any method described in this paper in any way be not considered require withSpecifically sequentially perform its step.Correspondingly, claim to a method be actually not required for following its sequence of steps orDo not particularly point out step in claims or specification otherwise and be limited to specific order, in all respects not purportsOrder is being specified in any way.In understanding, this all sets up for any possible non-express basis, including：Relative to workThe logic item of sequence arrangement or operation stream；The clear meaning obtained from grammatical organization or label；Embodiment described in specificationQuantity or type.
As used herein, " one " of singulative, " one " and "the" also include plural thing, unless up and downText clearly otherwise provides.Thus, for example, the reference to " part " includes the side with two or more such partsFace, unless context clearly otherwise provides.
Overall description
With reference to Fig. 1 and 2, the carrier 10 with thickness 12 is bonded to thin plate 20 so that thin plate 20, i.e., with 300 microns orThe thin plate of smaller thickness 22 (includes but is not limited to such as 10-50 microns, 50-100 microns, 100-150 microns and 150-300The thickness of micron) it can be used for existing apparatus to process foundation structure.When carrier 10 and thin plate 20 bond together, its combination thickness 24It is identical with the thicker plate designed by device process equipment.If for example, processing equipment is designed for 700 microns of plates, and thin plateWith 300 microns of thickness 22, then thickness 12 elects 400 microns as.
Carrier 10 can be made up of any suitable material, including such as glass or glass-ceramic.If be made up of glass,Carrier 10 can have any suitable composition, including alumino-silicate, borosilicate, aluminoborosilicate, sodium-calcium-silicate and rootAccording to and final application can be containing alkali or alkali-free.Thickness 12 can from about 0.3 to 3mm, such as 0.3,0.4,0.5,0.6,0.65,0.7th, 1.0,2.0 or 3mm, and thickness 22 will be depended on as described above.In addition, carrier can be by one layer (as shown in the figure) or bondingMultilayer (including multiple thin plates) together is made.
Thin plate 20 can be made up of any suitable material, including such as glass or glass-ceramic.It is when being made up of glass, then thinPlate 20 can have any suitable composition, including alumino-silicate, borosilicate, aluminoborosilicate, sodium-calcium-silicate and according toAnd final application can be containing alkali or alkali-free.The thickness 22 of thin plate 20 is 300 microns or smaller, as described above.
Thin plate 20 is bonded to carrier by region 40, wherein having between the surface of thin plate 20 and the surface of carrier 10 directlyContact.It is not bonded between carrier 10 and thin glass plate 20 or relatively weak bonding (as described above) in region 50, thisAfterwards only for being referred to as nonbonding region with reference to convenient, even if may there is some form of weak bond to close.Nonbonding region 50 has sideBoundary 52, is arranged on outside bond area 40.
This concept is related to by Van der Waals for is initially bonded to carrier 10 by flexible board 20, then increases in some regionsPlus bond strength is while remove thin plate with the ability of forming apparatus after being maintained at processing thin plate/carrier products.This concept is also related toAnd：Clean and surface prepares thin plate 20 and carrier 10 to be bonded；Thin plate 20 is initially bonded to carrier 10；In bond areaInitial being bonded between 40 reinforcing thin plates 20 and carrier 10；The releasable of thin plate 20 and carrier 10 is provided in nonbonding region 50Property；And pull out the required part 56 of thin plate 20.
Overall craft flow
Fig. 3 shows the overall craft flow for this concept.Carrier process 102 is included on the choosing of size, thickness and materialSelect suitable carrier.Then carrier is cleaned in process 104.106, handle carrier to realize that from thin plate there are different bond strengthsRegion.Then carrier can be cleaned again in process 104a, process 104a can be identical or different with process 104.Or, according to makingWhich process to realize the region of bond strengths different from thin plate with, carrier can use different cleaning process cleans, or completeIt is complete unclean.Then prepare carrier being bonded to thin plate in initial bonding process 108.In technological process 122, on its size,Thickness and material selection thin plate.Thin plate can have the size about the same with carrier, slightly larger or smaller.After selection, at 124Clean thin plate.Cleaning process 124 can with used in 104 it is identical or different.The purpose of cleaning process is to reduce carrier and thin plateBonding face on particle or other impurity amount.At 108, the bonding face of thin plate and carrier is in contact with each other.At 110, performFor the process being bonded between enhancement vector and thin plate.At 112, carrier/sheet products are formed through being subject to processing on thin plateDevice.At 114, alternatively, carrier and thin plate can cut into smaller portions when thin plate is still bonded to carrier.At 114Cutting (in the presence of) can occur after processing 112, before processing 112 or between two different steps of processing 112.Then116, at least a portion of thin plate is removed from carrier.
Carrier and thin plate selection-example 1
Carrier is chosen to have：0.7mm thickness；The Circular wafer of 200mm diameters；Corning Incorporated EagleGlassComposition.Thin plate is chosen to have：100 microns of thickness；Less than the size of carrier；And Corning Incorporated EagleGlass intoPoint.
Cleaning glass -104,104a, 124
The cleaning process is mainly used in removing the particle that may interfere with and be bonded between thin plate and carrier.But, this was cleanedJourney can also be used for making carrier surface coarse, and thus form nonbonding region to realize different keys with reference to processing as described belowClose intensity 106.The cleaning process can at 104 carrier (and/or thin plate, if thin plate is also or alternatively through being subject to processing on 106)Carried out before processing 106, carry out or all enter before and after processing 106 after this processing 106 at 104aOK.Cleaning process can also be carried out before initial bonding on thin plate, even if thin plate is not subjected to surface treatment at 106.
Cleaning process 104 generally includes up to four steps：The overall first step for removing organic matter；The of additional cleaningTwo steps；The third step of rinsing；And the four steps dried.
The overall first step for removing organic matter may include to be cleaned with one or more of following：With dissolvingThe DI water of ozone；O2Plasma；Sulfuric-acid-hydrogen-peroxide mixture；And/or UV- ozone.
The second step of additional cleaning may include standard clean -1 (SC1).SC1 is alternatively referred to as " RCA cleanings " in this area.The process may include ammonia solution, and following article is discussed on processing 106, and cleaning can be not only performed with some materials but also surface is performedRoughening.Instead of SC1, it can be used JTB100 or Bake cleaning (Baker clean) 100 (can be from company of Jie Te Australia(J.T.Baker Corp.) is bought), it does not include ammonia solution, and does not therefore carry out surface together with cleaning for some materialsRoughening, also following article combination processing 106 is discussed.
Rinsing can be in DI water by quick dump rinse (QDR) progress, such as by the way that water is flowed through into plate (appropriate carrierOr thin plate) and carry out.
Four steps is drying steps, and may include that kalimeris dagger-axe Buddhist nun (Marangoni) type is dried, including isopropanol.
The cleaning process 104a and 124 just occurred before initial bonding at 108 in some cases can be as initial keyFinal step before conjunction includes cleaning to remove organic material.Therefore, the various processes order above in association with 104 descriptions is arrangedArrange into and cause step 2 after step 1.It is preferably, thus if having any notable delay between cleaning 1 and 2Organic matter (environment deposited from carrier and/or thin plate) is collected thereon.But, if do not had between step 1 and 2Significant practice, or carrier/thin plate are stored in the environment containing a small amount of organic particle, such as clean room, then step 1 and2 can the order generation, cleaning organic matter before thus just need not being initially bonded at 108.At all other aspect, process is cleanedIt is identical that 104a, 124 still above in conjunction 104 are described.
Clean example -1
Each carrier and thin plate from carrier and thin plate selection-example 1 are by by four step process, wherein matching somebody with somebody substantiallySide be the dissolved ozone cleaning in casing 403, the SC1 steps 420 in casing 402, the rinse step 430 in casing 403,And the drying steps in casing 404.All mixtures are by volume unless otherwise stated.NH used herein4OH is14.5 moles of (28 w/w NH in water3).H used herein2O2It is 30 weight %H in water2O2.DI or DIH2O refers toDeionized water and these terms are used interchangeably herein.
Fig. 4 is the cabinet arrangement of service machine, including each casing relative position, in the esoteric mistake of the particular boxJourney, the technological process by machine and used design parameter.In this process, casing 401, without using etching (includingHF/HCl is etched).Following steps are performed in casing 402 to 404 is respectively designated as.
In first step 410, glass is put into comprising dissolved ozone (DIO3) casing 403 in.Details as Follows：
DI water with dissolved ozone
Ozone concentration：30ppm
Time：10 minutes
Temperature：Environment temperature (about 22 DEG C)
Flood flow：44Lpm
In second step 420, sample is put into the casing 402 comprising SC1 solution.Details as Follows：
1 part of NH4OH：2 parts of H2O2：40 parts of DI water
Temperature：65℃
Time：5 minutes
Million sound：350w,850kHz
In third step 430, sample is put into casing 403 to carry out quick dump rinse (QDR).Details as Follows：
Time：10 minutes
Rinsing：44Lpm DI water high flow capacity jet flows
Temperature：Environment temperature (about 22 DEG C)
In four steps 440, it is dried in IPA steams.Details as Follows：
Time：10 minutes (including the advance jet flow of Marangoni type is rinsed and N2/ IPA low discharges are dried)
Time：2 minutes final 150 DEG C of N2High flow capacity is dried
Clean example -2
The carrier from releasing layer application-example 1 is fetched below and is carried out identical clear described in cleaning example -1 aboveClean process.
Processing -106 for realizing different bond strength regions
It is simple in order to explain in the whole specification, description is carried out on carrier from realizing different bond strength areasThe processing in domain.It should be noted, however, that or this processing can be performed on thin plate or on both carrier and thin plate perform.
A kind of mode for forming nonbonding region is that material is deposited on carrier, is subjected to being expected in device processThin plate, which is not provided with into, during temperature is bonded to the nonbonding region.Therefore institute's deposition materials are formed between carrier and the surface of thin plateReleasing layer.Preferably institute's deposition materials are that cleanable (so as to be subjected to cleaning process as described herein, the process is used to promoteRealize the good bonding of bond area) it is removable from carrier by etching, and can also easily be formed rough surface (for example whenIt is in preferably crystal form when they are present on carrier) it is bonded in order to which thin plate is disengaged with carrier.For the appropriate of releasing layerMaterial includes aluminium-doped zinc oxide (AZO), the 0.2-4.0% Ga-doped zinc oxide of such as zinc oxide (ZnO), 0.2-4.0%(GZO), tin oxide (SnO2), aluminum oxide (Al2O3), gallium oxide (Ga2O3), bismuth oxide (Bi2O3), F-SnO2、F-SiO2, withAnd TiON and TiCN.It can be used standard deposition technique that material is placed on carrier.
The releasing layer can be run based on the principle for increasing the roughness at interface between thin plate and carrier, be consequently formed nonbondingRegion.Thus, releasing layer may include >=2nm Ra surface roughness (average surface roughness) is in order to preventing nonbonding areaThe secure bond in domain.However, as surface roughness increases, the gas flow being captured between thin plate and carrier also increases, and this leadsCause the process problem being discussed herein.Thus, the amount of workable surface roughness may have the upper limit in practice.The upper limit may takeCertainly nonbonding region is ventilated in the treatment technology for being initially bonded and by using the ventilation bar or groove being discussed herein.
The roughness on surface can adjust to increase surface roughness by acid etch step.Acid etching can be used as independent stepTo perform, or it can suitably be selected and be combined with cleaning by the clean solution of the material relative to releasing layer.But from techniqueViewpoint is seen, it is advantageous that while carrying out surface roughening and cleaning.
For example, using AZO films, can be then clear by alkali by using acid (such as pH value is 2 HCl solution, room temperature) etchingClean (such as with ammonium hydroxide (TMAH)) and will etching be used as independent step perform.Alkali cleaning can be used in carboxylate bufferTMAH H2O2Carried out with standard JTB100.In one example, using with 30%H2O2JTB100, in carboxylate bufferTMAH, surface roughness is reduced to 1.1nm from 2nm.In addition, the clean solution is easily from the rinsing of AZO films, this is bonded in carrierTo advantageously causing low deflation during thin plate and/or when product is processed by device.Thus, which can be carried out in some casesSurface roughening and cleaning, when such as using the less measure of gas trapping between carrier and thin plate is prevented.
In order to be cleaned and be roughened in one step, to AZO films, such as SC1 techniques (40 can be used:1:2DI:NH4OH:H2O2) surface roughness from 2.0 is increased into 37nmRa.(wherein need the situation of process simplification in some casesUnder), when using the further measure of gas trapping between carrier and thin plate is prevented, combination cleaning and roughening are preferably.
Alternatively, releasing layer can be based on the principle operation being bonded with thin glass plate formation without OH, and need not have is specific thickRugosity is to provide nonbonding region；Such material may include such as tin oxide, TiO2, silica (SiO2), heat proof material, SiN(silicon nitride), SiC, diamond-like-carbon, graphitic carbon, graphite, titanium nitride, aluminum oxide, titanium dioxide (TiO2), SiON (nitrogen oxidationsSilicon), F-SnO2、F-SiO2And/or the material of fusing point<1000 DEG C, and/or strain point>About 1000 DEG C those materials.
The releasing layer thickness should be selected such that its do not cause the gap between carrier and the bonding surface of thin plate to causeThin plate when bonding surface is contacted by excessive stresses degree.Excessive stresses in thin plate may cause to attempt to be bonded to carrierThe damage of thin plate during period and/or the processing of subsequent device.That is, for example, it is assumed that thin plate have flat surfaces (i.e. towards carrier andThere is no the surface of depressions or protrusions in the region of releasing layer, releasing layer can not should bear to be more than 1 above the bonding surface of carrierMicron, such as the gap between the bonding surface of thin plate and carrier should be, for example ,≤1 micron ,≤500nm ,≤200nm ,≤100nm ,≤50nm ,≤25nm ,≤15nm ,≤10nm or≤5nm.On the other hand, releasing layer is needed with enough thicknessDegree is so as to prevent the surface bond of thin plate and carrier.Thus, there is the completely flat surface of face each other in thin plate and carrierIn the case of, releasing layer should have >=0.2nm thickness.In other cases, thickness 10-500nm releasing layer is acceptable.In other cases, thickness 100 to 400nm releasing layer are acceptable；These pass through test and find to allow bondingAbundant bonding in region, but nonbonding region is also provided.In some cases, releasing layer can part be arranged on carrier and/Or in the depression in thin plate.
Releasing layer can allow selected portion less than pattern is formed between thin plate 20 and carrier 10 in whole contact areaDivide and nonbonding region 50 is formed between thin plate and carrier.For example, with reference to Fig. 5.Nonbonding region 50 has circumference 52.That is, releasePut layer and can form pattern to allow releasable material and/or surface treatment to be applied to region 50 and non-area 40.Thin plate 20 and carrier10 remainder, i.e. bond area 40 are bonded together.Therefore, can by along dotted line 5 or its each subset cutting and will be anyThe required part 56 of quantity is separated with any amount of other required parts 56, and all required parts 56 are still bonded to carrier10.It may be desirable that and be divided into smaller subelement further to handle by product 2.In this case, bond area 40 and non-The arrangement of bond area 50 be advantageous in that thin plate 20 and each several part of carrier 10 still around its circumference be bonded so that placeReason fluid does not enter therebetween, and treatment fluid may pollute subsequent process, or may separate thin plate 20 with carrier 10.
Although being shown in Figure 5 for a thin plate is bonded to a carrier, multiple thin plates 20 are bonded to a carrier10, any of which thin plate 20 is bonded to carrier 10, with any appropriate number of nonbonding area surrounded by bond area 40Domain 50.In this case, when required part 56 is separated with other required parts 56, carrier 10 can be in each of different thin plates 20Separated between bond area 40.
The second way for forming nonbonding region is that have different bond strengths by being used between thin plate and carrierDifferent materials.For example, SiN can be used in nonbonding regionx, and SiO can be used in bond area2.In order to form these two kindsDifferent materials region, can be used following technique.Can be by PECVD by SiNxFilm is deposited in the whole surface of carrier.Then may be usedBy PECVD by SiO2Film is deposited on SiNxOn top, the pattern of formation causes its region for being deposited on needs bonding.
The third mode for forming nonbonding region is to use O2Plasma increases the bond strength of material, otherwise can be withThin plate formation weak bond is closed.For example, SiNx(silicon nitride) can be deposited on whole carrier surface.Shutter can be used to stop nonbondingRegion is closed, and then by O2Plasma is applied to de-occlusion region.Pass through O2The SiN of plasma treatmentxIt is sufficiently tight by being formedBonding by sheets of glass to be fixed to carrier, and untreated SiNxNonbonding region will be formed.
The 4th kind of mode for forming nonbonding region is the surface roughening by using carrier, thin plate or both.NonbondingClose increase of the surface roughness relative to bond area in region so that be bonded the enhancing phase in device processing or bond areaBetween heat when do not form thin plate to the bonding of carrier.Surface roughening can be with forming the first, second or third of nonbonding regionThe technology of the mode of kind is used together.For example, the surface of carrier forms texture or roughening at least nonbonding region.For example, carryingBody surface face can be handled with the acid solution of increase carrier surface roughness.For example, the acid in solution can be H2SO4、NaF/H3PO4It is mixedCompound, HCl or HNO3.The other manner of surface roughening includes such as sandblasting and reactive ion etching (RIE).
According to an embodiment of the 4th kind of mode, roughened surface can be by printing on one needed for thin plate and carrierGlass etching cream is provided.
More specifically, reactive ion etching (RIE) and such as Gateway solution etch process need mask processForm bonding and nonbonding region.Photoetching is expensive but accurate.The additive method of such as thin film deposition can also be used for forming nonbondingClose region.Pass through the chemical vapor deposition of the tin oxide (FTO), carborundum (SiC) and silicon nitride (SiNx) of such as Fluorin doped(CVD) film of deposition needs the lithographic patterning and wet type or dry-etching of costliness that nonbonding region is formed into pattern.Pass throughThe film of physical vapour deposition (PVD) (PVD) deposition of such as alumina doped zinc oxide (AZO) and tin indium oxide (ITO) can shadow coverCover that nonbonding region is patterned and formed in a processing step.But, all these film process need heavy to vacuumA large amount of capital investment, photoetching and the etch capabilities of product equipment.
The formation in nonbonding region and patterning are combined to the less capital intensive of a step and the mode of low costIt is etchable and roughening glass substrate the glass etching cream of printing.Glass etching cream uses the villiaumite and inertia as etchantMaterial is etched or " frostization " soda-lime glass with covering.The nonbonding region patterned on carrier can by screen printing etch cream withLow cost easily forms.The etching paste method of surface roughening makes it possible to the pattern of etching restriction to form nonbonding areaDomain, and roughness can be caused in the limited area while reserving remaining glass surface for reset condition.In addition, surface rougheningThe multipurpose of etching paste method be that the viscosity of cream is adjustable so as in silk-screen printing, and the composition of cream is customizable with to differenceGlass ingredient produce needed for etching roughness.
Display glass composition available for thin plate and/or carrier is made with high strain-point, high chemical durability and heightRigidity.These characteristics cause the rate of etch of display glass in etching paste significantly less than soda-lime glass.In addition, such as display glassThe multicomponent glass of glass may not be etched uniformly.The solubility of multicomponent glass can be estimated from equilbrium solubility theory.HealthPeaceful EAGLE XGTMGlass (healthy and free from worry Corning Incorporated is commercially available from New York) is calcium aluminoborosilicate.Assuming that with by allow precipitationEnd pieces constitute infinite solid contact, use ChemEQL for the etching composition of various concentration(http://www.eawag.ch/research_e/surf/Researchgroups/sensors_and_analytic/chemeql.html) estimation EAGLE XGTMSolubility.Figure 18 is shown according to calcium in ammonium acid fluoride (line 1801, triangle dataPoint), aluminium (line 1802, x data points), the pH value of boron (line 1803, square data points) and silicon (line 1804, diamond data points)Solubility.Other component oxides of the solubility of calcium than pH value higher than 5 are much lower.Because cream etching is generally near neutral pHTo improve security and processing, people are expected the selective etch of calcium-aluminium borosilicate glass and leave deposition on etching surfaceCalcium oxide and salt.Figure 19 shows influence of the various etching paste composition compositions to the solubility of aluminium.With sodium bifluoride (line 1902,Triangular data points) ammonium acid fluoride (line 1901, square data points) is replaced, and with ammonium chloride (in line 1903, x data points) portionDivide the changes in solubility that aluminium is not almost provided instead of ammonium acid fluoride.Only ammonia is replaced to have little to no effect with another univalent cation(alternative line 1901 and 1902).Chlorine additive (line 1903) somewhat suppresses the aluminum concentration of dissolving.But, add sulfuric acid and barium sulfate(such as in use, line 1904, diamond data points in Armour etching frosts) is shown in the aluminium solubility reduction (line with ammonium acid fluoride1901 are compared).In addition, such as from Figure 19 and 20, compared with the situation of ammonium acid fluoride (2001 lines, square data points),With the reduction of the aluminium (line 1904) always dissolved, the addition of barium sulfate and sulfuric acid (2004 lines, diamond data points) is considered as notableIncrease the calcium always dissolved.Therefore, the acid etching cream of barium sulfate-containing and sulfuric acid compared with ammonium acid fluoride with only substantially reducing calcium aluminium boronThe preferential corrosion of silicate glass.Sulfate is a good selection, because most of sulfate remove barium and strontium high soluble, instituteSo that barium sulfate can be added as masking material.Further, it is noted that calcium solubility is dramatically increased as pH value is reduced, so canBy using the preferential etching of simple pH value regulation reduction (wherein calcium etching is less) of sulfuric acid (so that calcium etching is more, and therefore moreEquably remaining composition with glass is constituted).
Verified glass etching cream forms nonbonding region.Carrier (0.63mm Eagle XG) is by by carrier surfaceRoughening forms bond area and forms bond area and be bonded to thin plate (0.1mm Eagle XG), allows in bond area formerBeginning state glass surface carries out van der waals bond before the strong covalent bond that 500 DEG C of annealing are formed.In this example, it is fast lightMask forms nonbonding by lithographic patterning, and using commercially available etching paste (Armour etching pastes) (10 minutes etching periods)Region.Calcium-aluminium borosilicate glass is etched for being formed under conditions of examples detailed above with etching paste, and finds surface roughnessIncrease to 0.42nm from 0.34nm.Typical bonding technology is used, 0.1mm sheets of glass is bonded, leaves nonbonding central areaWith strong bonding edge.The carrier of the bonding passes through 70mTorr vacuum cycle, 600 DEG C of heat treatment, and generally LTPS worksThe wet processing of skill.
Etching paste can be applied to the figure of restriction by the various typographies of such as silk-screen printing, ink jet printing or transferEtchant pastes are applied to each region of carrier to form nonbonding region by case, typography.Silk-screen printing is the mould of printingThe open area that plate method, wherein etching paste can be forced through template during scraper stroke via filling blade or scraper is arrivedUp on carrier.Apply etching paste in the given time to realize required roughness.By change etching paste application time, temperature andComposition can change roughness.For example, application time at room temperature can be from 2 to 20 minutes.After cream etching, generally with heatingAlkaline aqueous solution, using or without using such as scrub mechanical agitation, ultrasound or million sound stirring cleaning carrier.After flushing,Substrate is molten in the standard clean 1 (SC1) of the alkali by DI water, such as ammonium hydroxide or tetramethylammonium hydroxide and hydrogen peroxideCleaned in addition in liquid.Then by carrier and the contact of thin glass part to form van der waals bond, and higher than 450 DEG C (for example500 DEG C) it is heat-treated to form the covalent bond between thin glass and carrier.
According to the second embodiment of the 4th kind of mode, synthesis under normal pressure ion(ic) etching (AP-RIE) can be used.AP-RIE canGlass carrier region is roughened for the method by using mask method or the photoresist of polymer.These film sidesMethod needs substantial amounts of fund input.If manufacturer has possessed processing equipment, manufacturer can utilize the existing of process equipmentCapital investment, while obtaining for PV, OLED, LCD and the thin glass plate of other application manufacture advantage.
AP-RIE is the technology used in micro manufacturing.The technique using chemical reactivity plasma with from substrate remove materialMaterial.In the process, plasma is generated using low pressure (usual vacuum) by electromagnetic field.Cream energetic ion from plasma is invadedErosion substrate surface simultaneously forms surface roughness.Using plasma gun or the jet being incident in limited area conveying AP-RIE withIt is roughened, that is, in the case of needing nonbonding region.Plasma uses the attached region exposed of two methods.For the meshSuitable reactivity gas be NF3、CF4、C2F6、SF6Or usual any fluorine gas.Now the mask for implementing AP-RIE will be describedThe method of the photoresist of method or polymer.In the description of these methods, carrier is described as etching is used for nonbonding to be formedClose the carrier of the rough region in region.But, according to the final application of thin plate, thin plate also can or be alternatively etching to be formedThin plate for the appropriate surface roughness in nonbonding region.
Mask method
Mask method is lower than the method cost of the photoresist of polymer, at least partly because there is less processing stepSuddenly, it is necessary to less equipment.Mask material can be several materials for being not easy etching of such as metal, plastics, polymer or ceramicsMaterial.But, mask method may be accurate not as the method for photoresist, and is therefore not suitable for some applications.More specifically, passing throughWhat mask method was formed exposes edge not as edge limited must understand of the method formation of the photoresist of polymer.
Program for implementing mask method is as follows.Mask is placed on glass carrier.Then AP-RIE plasmas are usedTo etch the glass carrier region exposed.Then mask is removed from glass carrier.And it is last, glass carrier is cleaned to moveExcept the particle that is bonded, bond area and the nonbonding so formed are may interfere between thin glass plate and carrier in bond areaRegion is adjacent.
The method of the photoresist of polymer
The method of the photoresist of polymer is higher than mask means cost, is thrown at least partly because being related to more capitalsMoney, and have more processing steps.But, this method is more accurate than mask means, and therefore may be more suitable for some applications.By poly-The exposed edge that the method for the photoresist of compound is produced more clearly is limited than the exposed edge produced by mask means.ForThe program for implementing the method for the photoresist of polymer is as follows.By the photoresist of polymer be deposited on glass carrier withBond area needed for stopping.Photoetching (exposure and development photoresist) is performed with the pattern of bond area needed for limiting, whereinBy the surface roughening of carrier.AP-RIE plasma etchings are carried out on the exposed region of glass carrier.Exposure can occur in glassThe front portion or rear portion of glass.In any case, polymer protection is referred to as the region of bond area.
Then removed agent with the polymer resist of such as oxygen ash or the mixture of sulfuric acid hydroperoxides (SPM) and removed and gatheredCompound.Finally clean glass carrier may interfere with being bonded in required bond area between thin glass plate and carrier to removeGrain.
Clean method suitable for being used after above-mentioned AP-RIE methods may include detergent washing or RCA-type cleaning (such asIt is known in the art).These conventional cleansing methods can be used after the etch is completed.The cleaning process is mainly used in removing required keyClose in region and may interfere with the particle being bonded between thin plate and carrier.The cleaning process generally includes to remove organic matter, extra clearClean, flushing and drying.
Detergent washing methods is washed in ultrasonic wave with KG, Parker 225 or Parker 225X detergent are removedParticle and light residue.Pass through such as KG washings, the removable Asia of Parker 225 or Parker 225X detergent in million soundMicron particles.Rinsing may include to rinse in room temperature to the DI water at 80 DEG C in ultrasound or million sound.In addition, rinsing may include to useIPA is rinsed.After flushing, carrier glass is dried.Compressed air can be used to dry the carrier of mask with air knife.PolymerThe carrier of photoresist formation can be dried with nitrogen.In either case, it can be dried in kalimeris dagger-axe Buddhist nun's drying machine.
RCA clean methods include three cleanings, rinse and dry.It can carry out the first cleaning to remove with SPMWeight organic matter.Second cleaning may include standard clean 1 (SC1), wherein using as needed with or without ultrasound or million soundThe solution of the ammonium hydroxide of dilution, hydrogen peroxide and DI water.The cleaning removes little particle and submicron particles.SecondAfter cleaning, it is rinsed with or without ultrasound or million sound in DI water.Alternatively, in second cleaning therebetween,The washing with brush can be carried out.Nylon, PVA or PVDF materials can be used for brush.If washed using brush, hereafter existRoom temperature with DI water in ultrasound or million sound to can carry out another once flushing at 80 DEG C.3rd cleaning includes standard clean 2(SC2) it is used to remove metal pollutant.SC2 be included in room temperature at 80 DEG C with ultrasound or million sound HCL：H2O2：DI or HCL：DIAmount the time required to solution is carried out.After the 3rd cleaning, sample is rinsed in DI water with or without ultrasound or million sound.MostAfterwards, using compressed air air knife drying sample.Alternatively, nitrogen can be used to be done with kalimeris dagger-axe Buddhist nun's drying machine for sampleIt is dry.
The fifth procedure for forming nonbonding region is directed to use with photoetching process.The material closed with thin plate formation weak bond is depositedOn carrier；Such as material can be SiNx.SiNx for example by photoetching process formation pattern, thus removes bond areaSiNx, thus allows thin plate to contact and be bonded with the surface of carrier.
It is above-mentioned that 80 combined uses are bonded with edge for forming any of nonbonding region method.See Fig. 6.Periphery keysClosing 80 can be by thin plate 20 to the laser fusion of carrier 10 or for example, by being applied to the edge of thin plate 20 and the table of carrier 10Frit or polyimides (or other adhesives of expected temperature during device processing can be born) between face and formed.As schemedShown, the edge of thin plate 20 is from the marginal trough of carrier 10 to aid in preventing thin plate 20 to be processed equipment or other damage.Edge bonding 80 may extend into edge lower section as the cladding region 81 of carrier to reduce treatment fluid into thin plate 20 and carrierProbability between 10, this can increase the risk that thin plate 20 comes off from carrier 10.Bent in thin plate 20 or otherwise miscellaneous sideNot in full conformity with the case of the surface profile of carrier 10 at edge, this is probably using situation during ventilation bar 70, edge bonding80 come in handy.Under any circumstance, being bonded 80 using edge helps to increase the reliability of product.Although Fig. 6 shows thin plateReleasing layer 30 between carrier, but this method is available for any other mode for forming nonbonding region.In addition, edge is bonded80 entirety that can be provided between thin plate 20 and carrier 10 are bonded, or can supplement other bonding regions between thin plate 20 and carrier 10Domain, such as bond area of formation as described herein.
Releasing layer application-example 1
AZO is splashed on carrier using the carrier for carrying out automatically cleaning example 1 and in nonbonding region.That is, using maskStop the AZO of sputtering in bond area coated carrier.AZO passes through the 1%O in 10mT pressure, Ar gas2And 2.5W/cm2Power is closeDeposited under spending (at target) by being sputtered from 0.5 weight %ZAO targets RF.
Selection AZO is that crystal AZO can hold because it is easy to from inexpensive metallic target reactive sputtering to form crystal AZOChange places roughening, cleaning and remove (formation pattern).Crystal AZO grainiess can provide appropriate surface roughness.In addition,AZO is easy to by acid or alkaline solution roughening or removed.Specifically, roughening can pass through alkali after acid etching after depositionCleaning also cleans and removed the alkaline etching of organic matter to realize.Etch and realized at room temperature with pH value for 2 HCl solution,Thus surface roughness is increased into 9.0nmRa from 2.9nmRa with the etching period of 5 seconds.
Initial bonding process 108
In order to prepare the initial bonding of the plate (thin plate and/or carrier) with releasing layer thereon, preheating step can be used.In advanceOne target of hot step is cleaning and/or formed after releasing layer to drive away the volatile matter of any residual.Preheating step is advantageouslyThen bonded support/sheet products device processing during at a temperature of desired temperature is close to or higher than heating plate.Such asThe temperature that fruit uses during preheating is less than prediction mechanism processing temperature, then can drive away additional volatile matter during device is processed, makeGas buildup can cause thin plate to be discharged from carrier or web breaks in nonbonding region, in some cases this.Even if not thinThe separation or fracture of plate, these gases may also cause thin plate to swell, and this can cause it to be unsuitable for for example needing a fixed board to put downHandled in the apparatus and method of smooth degree.
Heating stepses can be used for minimizing or prevent the water absorbed from being formed on bonding surface at once before bonding, and this is bigIt is big to improve vacuum and performance under high temperature and allow to form strong bonding between carrier and thin glass.
Such as empty gas and water caused by during bonding technology or the captured gas of volatile matter can be due to during user is handledElevated temperature (150 DEG C -600 DEG C) or vacuum environment and expand, this can cause the separation of thin glass, fracture or to influence or interfereUser is handled or the mode of processing equipment is swelled.But, need hydroxy-end capped surface thin to realize for bonding glass surfaceBeing bonded between glass and carrier.Have from the absorption of nonbonding (coarse) region removing of physical and chemical absorbed water and be bonded without removingDelicate balance between silanol stopped group needed for region is to keep being bonded between thin glass and carrier.
The balance can prepare to realize by following bonding surface.Carrier and thin glass are first in conventional cleaning line alkalescenceDetergent and ultrasonic agitation cleaning, and carry out DI water flushings.Followed by O2Plasma cleans, and in 75 DEG C of dilution SC1 baths (40：1：2DI:NH4OH:H2O2Or 40：1：2DI：JTB100：H2O2) in carry out 10 minutes.According to the property on nonbonding surface, carrier andThin glass is subjected to the water that the baking of 150 DEG C of hot plates of 1 minute is adsorbed with removing of physical, or be subjected to 450 DEG C of vacuum annealings of 1 hour withRemove the chip of chemisorbed.After free water is removed, thin glass and carrier are contacted with pre- by Van der Waals for quicklyBonding, and in T>It is heat-treated to form covalent bond at 450 DEG C.
After SC1 cleaning processes, people are expected glass surface and are full of hydroxyl (~4.6OH/nm2, this should shape after condensationInto 2.3OH/nm2), the individual layer (~15OH/nm covered with the hydrogen combination water combined closely2), and more loosely combine free water(~2.5 individual layer).Free water is lost in a vacuum at as little as 25 DEG C.Reportedly in heating under vacuum to 190 DEG C of removal hydrogen knotsThe individual layer of Heshui.400 DEG C are heated in addition and removed above except all substances of single silane alcohol groups, but this reduction surface hydroxylThe degree of change.The temperature more than 1000 DEG C is needed to remove all oh groups, but according to the present invention, these are for realizingThe suitable performance of thin plate on carrier is not required.
The additive process deposited by such as alumina doped zinc oxide (AZO) or subtracting such as reactive ion etchingExcept the formation in the nonbonding region of process, or etching paste form increased surface roughness, and it can cause to increase absorption in tableWater and the increased chemical change of other gas flows on face.Specifically, with containing NH4OH and H2O2SC1 AZO cleaning drawReact the Zn to be formed (OH)2.The reaction greatly increases surface roughness and forms white dim surface.In heating, Zn(OH)2Only start the ZnO and water being decomposed to form at 125 DEG C.Also absorbing carbon dioxide is steady to be formed from air for zinc hydroxideFixed to 300 DEG C of zinc carbonate.
The water and silane alcohols that the free water, hydrogen are combined are to thin glass by being constituted with reference to circumference and nonbonding center by forceCarrier on the influence of compatibility can be by estimating the amount of each class reclaimed water and calculating LTPS techniques typical various PVD, CVDDescribed with the pressure applied when being expanded under dopant activation step by perfect gas law.
(table 1)
| | PVD | CVD | Dopant is acted on |
| Temperature | | 100 | 400 | 630 |
| Pressure | | 0.000001 | 1 | 760 |
| H2O/nm2 | Δ P (support) | Δ P (support) | Δ P (support) |
| Silanol | 2.3 | 4.74E+04 | 8.55E+04 | 1.14E+05 |
| What hydrogen was combined | 15 | 3.09E+05 | 5.58E+05 | 7.47E+05 |
| Free water | 37.5 | 7.72E+05 | 1.39E+06 | 1.87E+06 |
The evaporation of condensed water should produce the pressure difference of 104 to 106 supports.The pressure difference can cause bending of the thin glass away from carrier andDeviate.The deviation increases the volume between carrier and thin plate, reduces pressure difference.The pressure of application and the thin glass skew produced make thinGlass is by tension force.If tension force is too big, the possibility of thin glass failure can become unacceptable for manufacturing process.The least risk that failure can be caused due to surface water evaporation by making water at least make before bonding.
At once heating carrier and the thin glass carrier of thin glass part degassing para-linkage are passed through before being bonded after the cleaningThe influence of vacuum compatibility shown in table 2 and 3.
Table 2
Table 3
| Sample | SC1 | Degassing | Vacuum failure pressure |
| 3-1 | NH4OH | 450C/1hr | Bear 70 millitorr 25C |
| 3-2 | NH4OH | 450C/1hr | Bear 70 millitorr 25C |
| 3-3 | NH4OH | 450C/1hr | Bear but difference bonding, ventilation |
| 3-4 | JTB100 | 450C/1hr | Bear 70 millitorr 25C |
| 3-5 | JTB100 | 450C/1hr | Bear 70 millitorr 25C |
| 3-6 | JTB100 | 450C/1hr | Failed under 300C under 1 support |
These samples are included with containing NH4The carrier for scribbling AZO of OH or JT Baker 100 SC1 solvent cleans.Such asUpper described, zinc oxide is with containing NH4OH and H2O2SC1 solution reactions, formed Zn (OH)2.Pass through the vacuum phase of the carrier of bondingCapacitive is estimated by the filling locking pumping in conventional CVD instruments.The system has soft pump valve to slow down initial vacuum surge,And dry pump reaches<The final pressure of 70 millitorrs.Because cleaning between being bonded with not deaerating, all parts near atmospheric pressure withThin glass breakage and fail.Table 2 shows 150 DEG C of 1 minute hot plate degassings by the failure of the AZO samples cleaned in Baker 100Point is transferred to close to 1 support, and uses NH4The sample of OH cleanings fails still near atmospheric pressure.From silicon dioxide meter cited aboveIn the aquation research in face, people are contemplated by 150 DEG C of 1 minute hot plate degassings and remove most of hydrogen combination water.But, possibly can notComplete Zn (OH)2With Zn (CO)3Decomposition.Sample 2-1 to 2-7 comparison shows that 150 DEG C of 1 minute hot plate degassings are helpful, but onlyThis is inadequate.In addition, with sample 2-1,2-2,2-3 and the 2-4 cleaned of JTB 100 and using NH4The sample 2-5 of OH cleanings,2-6's and 2-7 is relatively shown between both clean solutions almost without difference.Table 3 shows 450 DEG C of vacuum annealings in 1 hourInfluence to the vacuum tolerances of carrier.Do not have in bond area flaw (visible before test) all bonded supports pass through it is trueNo matter whether hollow testing, used chemical agent in cleaning.The sample of table 3 and the comparison of the sample of table 2 show higher temperature andThe longer heat time bears more effective in the ability of vacuum condition in improvement thin-walled and carrier.When used in combination, this is foundTwo kinds of heating stepses are highly effective.Specifically, by 450 DEG C of vacuum annealings in 1 hour (according to the agreement of the sample of table 3) to patternThe carrier that change scribbles AZO is de-gassed, and by heating 1 minute (according to the agreement of the sample of table 2) on hot plate at 150 DEG CThin glass is de-gassed, 32/33 sample being made has passed through vacuum test.Although thin glass plate has been subjected to the sample of table 3Agreement, but the lower temperature of the agreement of table 2 and short period may be more economical in some cases.
After any heating stepses, then thin plate and carrier are in contact with each other.A kind of mode so done is by thin plateFloat on carrier top, and then make to put contact between the two.Bonding (such as Van der Waals type key is formed at contact pointClose) and extended across the interface between thin plate and carrier.This is advantageously avoided between thin plate and carrier trapped bubbles (initialBe bonded air or other gases in environment) because the gas of this trapping can be expanded during subsequent device processing (due toTreatment temperature or vacuum environment), and in some cases, thin plate is caused from the fracture of carrier release, or thin plate.Similarly, such asWith above-mentioned volatile matter, even if separation or fracture without thin plate, the gas of these captures may also cause thin plate to swell, this meetingSo that it is unsuitable for being handled in the apparatus and method for for example needing a fixed board flatness.
A kind of mode for avoiding bubble is to bend thin plate and/or carrier while contact point is formed, and is then allowedBending relaxation is straightened until thin plate and carrier.If bubble is trapped between thin plate and carrier, advantageously by rightBubble apply directional pressure until they from the edge of such as product or by venting channels escape and they are removed.In the rankSection, after initial bonding is formed, can treatment articles without worrying arrested particles between thin plate and carrier.Thus, for example, systemThen product can transport clean room to handle.
The another way for avoiding bubble is initially bonded in vacuum environment, this contribute to from thin plate and carrier itBetween remove gas.However, it is desirable that having thin water film even individual layer on the surface to be bonded.Moved from nonbonding regionExcept gas, volatile matter and water vapour to limit the gas of trapping, and both the opposition interests for having water on bond area can lead toCrossing makes water vapour flow through vacuum environment to adjust.Suitable temperature, relative humidity and flow rate may be selected to adjust these oppositionInterests.
If not having the volatilization of the plate removal sufficient amount of releasing layer from it before thin plate initially is bonded into carrierThing, then can carry out further degassing before initial bonding.In this point, product can be enough to cause the temperature further volatilizedLower heating.But, if the complete seal part that bond area forms around nonbonding region (such as prevents device technique fluid from enteringRequired between thin plate and carrier, thus they may pollute downstream process, i.e. seal is sealed), then volatile matterDeflation may cause thin plate to swell.The protuberance can be forced by applying directional pressure trapping gas discharge thin plate and carrier itBetween remove, such as removed in edge or via following venting channels.Other ventilation positions can be set as described below.If neededWill, it can allow to be cooled to room temperature in the stage articles.
Initial bonding-example 1
Fetch the carrier of automatically cleaning example -2 and place it on 250 DEG C of hot plate, and kept for 5 minutes in this place, andThen allow to return to room temperature.The thin plate for carrying out automatically cleaning example -1 is floated on the top of the carrier.Thin plate is forced in sheet edgesContacted in portion position and bond area with carrier point.Formed and be bonded between thin plate and carrier, and it is logical to observe that the bonding is propagatedCross bond area.Then the product is placed on hot plate and heated at a temperature of between 350 DEG C to 400 DEG C.It was observed that non-The protuberance of bond area, and then extruded between thin plate and carrier.
Nonbonding region is ventilated
It is non-when being captured in when product 2 is subjected to elevated temperature environment during reduction such as bonding reinforcing can be taken steps toThe amount of uplift capacity and/or other undesired effects to thin plate 20 during gas expansion in bond area 50.Reduce these notA kind of mode of desired influence, which is to provide from nonbonding region 50, extends through the logical of arrival thin plate 20 edge of bond area 40Gas bar 70.Referring to Fig. 7.Ventilation bar 70 can be formed in nonbonding region in identical or different mode.Advantageously, ventilation bar 70 is non-Bond area 50 is formed as releasing layer with identical material.The quantity of each ventilation bar 70 and position depend on the size in nonbonding regionAnd shape.Each ventilation bar 70 allows during any technique of heating product 2, for example during reinforcement process is bonded or worked as product2 be in vacuum environment when thin plate 20 and carrier 10 between trap gas effusion.Each ventilation bar 70 have width 71 and more thanNonbonding effect is produced on the width 73 of width 71 between thin plate 20 and carrier 10.According to the size and thickness in nonbonding region 50Degree, can be used any appropriate number of ventilation bar 71.
During each ventilation bar 70 can also be used for improving initial bonding or during device processing when product 2 is in vacuum environmentThe performance of product 2.For example, initial bonding can occur in vacuum environment to reduce the gas being captured between thin plate 20 and carrier 10The scale of construction and/or auxiliary initial bonding process.That is, when initial bonding process occurs in vacuum environment, ventilation bar 70 allowsGas is escaped between thin plate 20 and carrier 10 when initial bonding occurs.At the end of initial bonding process, although product is stillUnder vacuum environment, the gas and moisture of vent seal formula are not reentered between thin plate 20 and carrier 10.Or, exampleSuch as, it has been bonded and (has been strengthened by whole initial bonding and/or bonding) in thin plate 20 and arrived after carrier 10, product 2 can be put into vacuumIn environment, and ventilation bar 70 is sealed at it with the edge intersection of thin plate 20.So, it can reduce and be captured in thin plate 20 and carrier 10Between gas flow, thus make in vacuum or elevated temperature environment its undesired influence during device processing minimum.ThenThe sealing prevents air and moisture from being reentered by bar 70 of ventilating.
A kind of mode of sealing ventilation bar 70 is that product 2 is put into ald (ALD) chamber, the chamber is evacuated and rightThe end deposit thin of ventilation bar 70 is crossed in the edge of thin plate 20 afterwards.ALD is related to the individual layer pulse of reactant, reactantIt can spread and go deep into narrow structure (end for bar 70 of such as ventilating) and absorbed before the second pulse reaction with another precursor.ExampleSuch as, in Al2O3ALD deposition in, the individual layer aluminum precursor of such as trimethylaluminum compound reacts with individual layer water and forms Al2O3。
Ventilation bar-example 1
Carrier from releasing layer application-example 1 is additionally formed figure with each 100 microns of wide four passage in additionCase.Then the carrier is handled according to initial bonding example -1 and increase bond strength example -1.It is wide after bonding enhancingDegree 73 extends about half millimeter on every side of width 71.The sample bears initial vacuum test under 100 millitorrs.
Ventilation bar-example 2
Carrier from releasing layer application-example 1 is additionally formed figure with each 100 microns of wide eight passage in additionCase.Then the carrier is handled according to initial bonding example -1 and increase bond strength example -1.It is wide after bonding enhancingDegree 73 extends about half millimeter on every side of width 71.The sample bears initial vacuum test under 100 millitorrs.
Ventilation bar-example 3
Carrier from releasing layer application-example 1 is additionally formed pattern with four passages of each 1 mm wide in addition.Then the carrier is handled according to initial bonding example -1 and increase bond strength example -1.After bonding enhancing, width73 extend about half millimeter on every side of width 71.The sample bears initial vacuum test under 100 millitorrs.
Ventilation bar-example 4
Carrier from releasing layer application-example 1 is additionally formed pattern with four passages of each 10 mm wide in addition.Then the carrier is handled according to initial bonding example -1 and increase bond strength example -1.After bonding enhancing, width73 extend about half millimeter on every side of width 71.The sample bears initial vacuum test under 100 millitorrs.
Ventilation bar-example 5
Carrier from releasing layer application-example 1 is additionally formed pattern with four passages of each 25 mm wide in addition.Then the carrier is handled according to initial bonding example -1 and increase bond strength example -1.After bonding enhancing, width73 extend about half millimeter on every side of width 71.The sample bears initial vacuum test under 100 millitorrs.
Alternately or additionally in ventilation bar 70, groove can be formed with 10, carrier.That is, instead of being formed through bond areaReach in the bar in the nonbonding region at product 2 edge (or suitably reaching edge of thin plate 20), carrier 10 recess paths (orGroove) executable identical function.Or, instead of the groove in carrier 10, groove may be formed in thin plate 20, or in the He of thin plate 20In both carriers 10.The position of groove can be similar to the position of ventilation bar 70 shown in Fig. 7.Under any circumstance, groove allows trueAltitude is moved with any time before initial bonding, bonding enhancing, and/or device processing between thin plate 20 and carrier 10Except gas and/or moisture.Although still in vacuum environment, the injection and solidification sealing of groove usable polymers, polymer is for examplePolyimides, Thermocurable polymer or the curable polymer of UV.Or, groove can be put into matching somebody with somebody in groove by heatingClose material or sealed by directly heating the material around groove with melting and/or melting closing groove, such as added by laserHeat is achievable like that.These grooves can be set to and ventilation bar 70 identical construction and quantity.But, because groove can be made intoWith the cross section bigger than ventilation bar 70, less groove can be used.In addition, in order that using less groove, groove may extend awayTo nonbonding region 50, and its center is even extended in certain embodiments.The quantity of groove and/or vacuum bar may depend onThe size in nonbonding region 50.
Strengthen in desired zone and be bonded -110 between thin plate and carrier
At 108, being bonded for being formed between carrier and thin plate can be by various process strengthenings so that product 2 can bear dressPut harsh conditions (high temperature, such as temperature, the vacuum higher than 350 DEG C, 400 DEG C, 450 DEG C, 500 DEG C, 550 DEG C or 600 DEG C of processingEnvironment and/or high-pressure fluid injection) and thin plate does not depart from from carrier.
A kind of mode being bonded between reinforcing thin plate and carrier is to carry out anode linkage.Retouched in US 2012/0001293A kind of mode of anode linkage is stated, it discusses the deposition of barrier layer, and the use of anode linkage is so that these layers to be attached toSubstrate can also be used to thin glass plate being bonded on carrier substrate.
Between reinforcing thin plate and carrier the another way that is bonded be by using temperature and pressure, wherein product (includingThin plate and carrier) it is heated and withstanding pressure application.Pressure apply can by being carried out with the plate of carrier and sheet contacts, orFor example in the pressure chamber for applying Fluid pressure to product carry out.These plates can be used as thermal source in itself, or these plates can be setIn heating environment.The amount of pressure used can may for example need lower pressure when the temperature increases according to temperature change.
When using pressure plare, in thin plate and it can be applied space bar or thin slice are used between stressed plate.Space barIt is shaped to and is contacted in bond area with sheet contacts and in bond area as big as possible.It is using an advantage of distance pieceThickness of the amount equal to space bar that thin plate swells during it may allow to apply heat and pressure during bonding reinforcement.The amount of the protuberanceIt is acceptable during device is processed, it would still be possible to the problem of being caused during reinforcement is bonded to thin plate or damage.If non-This protuberance may then occur for remaining limited amount volatile matter and/or bubble between thin plate and carrier in bond area.Or,Pressure, which applies plate, can be shaped to depression or recess, or otherwise make it that it is direct not with thin plate in nonbonding regionContact.So, it is allowed to which thin plate has acceptable protuberance during reinforcement is bonded.If not allowing thin plate to swell, in some feelings(such as the residual volatile matter and/or air pocket for example with sufficient amount) under condition, it may be destroyed in the pressure of nonbonding zone-accumulationThe bonding occurred in bond area is strengthened.
On heating product to increase bond strength, heating produces acceptable key at a temperature of about 400 DEG C to about 625 DEG CClose intensity.In general, as temperature is raised, bond strength increase.The actual temperature upper limit by involved material, i.e. carrier materialThe strain point of the material of material and/or thin plate is limited.It is similar with temperature on applying pressure to product to increase bond strength, withPressure increase, bond strength also increases.In fact, in terms of manufacture angle, it is generally desirable to can in alap pressure andAt a temperature of produce acceptable bond strength.
, may when releasing layer is sufficiently thin when heating initial bond area with laser in the environment with atmospheric pressureIt can realize that the acceptable glass-glass between thin plate and carrier is bonded between thin plate and carrier.
Glass is discussed in the healthy and free from worry Corning Incorporated R Sabia in the New York B2 of patent US 6,814,833 to be bonded to glassTechnology.According to idea of the invention, it can be used " Direct Bonding of siliceous product " that thin glass plate is bonded into carrier.
Increase bond strength example -1
The product of initial bonding example -1 generation is taken at room temperature and is placed between heating platen, uses graphene film (figureCase makes the pattern match for causing grapheme material and bond area, and cut-away area and the pattern in nonbonding region in plateWith) it is used as the pad between thin plate and heating platen.These plates are brought together after to contact product, but do not apply any notable pressurePower.These plates are heated at a temperature of 300 DEG C, do not have notable pressure on product.These plates are increased to 300 DEG C from room temperature,And kept for 5 minutes.Then each plate is increased to 625 DEG C, and the pressure on product simultaneously from 300 DEG C with 40 DEG C/min of speedIt is increased to 20psi.The state is kept for 5 minutes, is then turned off heater and is discharged pressure.These plates allow to be cooled to 250 DEG C,The point, object is taken out from press and allows to be cooled to room temperature.On inspection, find product when thin plate and carrier are presented as monomerThere is this bonding in bond area, and thin plate and carrier are very independent entities in nonbonding region.
Increase bond strength example -2 (contrast)
Implement as strengthened the process described in bond strength example 1, except maximum temperature is 180 DEG C and using pressure is100psi.These conditions do not produce the bonding of the acceptable intensity for high temperature, low-voltage device processing conditions.
The required part -116 of thin plate is extracted by carrier
One of significant challenge of flexible glass concept is the ability for the required part that thin plate is extracted by carrier on carrier.With reference toFig. 1,2 and 8-12, the part summary are that free shape delineation is performed using scribe wheel 90 and thin plate 20 is removed from carrier 10The innovative approach of required part 56.A kind of method is also described, this method uses (such as CO of laser beam 942Laser beam) performThe free shape integral cutting and mechanical scratching of thin plate 20, to form a series of passages 61,63,65,67 and/or 69, withThe required part 56 of thin plate 20 is removed from carrier 10.
This method avoid need whole thin plate 20 disengaging bonding from carrier 10；Reduce the possibility of the fracture of thin plate 20Property.On the contrary, effect can be realized by the part 56 needed for only cutting and extracting, the required part 56 can be, TFT, CF,Touch membrane or other films.Further, since machinery and laser cutting do not cut the thickness 22 more than thin plate 20, this allows to make againWith carrier (after the unnecessary portion for removing thin plate from carrier) and reduce overall manufacturing cost.
Next, with reference to Fig. 1 and 2, how description is removed to the required part 56 of thin plate 20 from carrier 10, i.e., with formationDevice thereon or the part of other required structures.
In order to which required part 56 is removed from carrier 10, multiple otch are formed on thin plate 20.When for example, by scribe wheelWhen 90 mechanical device is to implement, these otch can be score line or breathing line.Or, (such as dioxy of laser 94 can be usedChange carbon laser) form ventilation or the overall otch through whole thickness 22.The air vent has depth 62.In order to easily and canPart 56 needed for being removed by ground, depth 62 is chosen to >=50% thickness 22.If hole depth 62 of ventilating is less than 50% thickness22, then thin plate 20 and carrier 10 will not be sufficient to bending due to bonding together come so that passage is propagated through whole thickness 22The otch of part 56 needed for forming release.In integrally laser cutting, ventilation hole depth 62 is 100% thickness 22.For letterNeutralizing is released and quoted, and passage described below is to be fabricated to the passage for being not passed through whole thickness 22.In addition, though allPassage is shown as with identical depth 62, but is needed not be so；On the contrary, passage can have depth different from each other.
Passage includes circumference passage 60, y to release ventilation hole 61,63 and x to release ventilation hole 65,67,69.Circumference 57 of the circumference passage 60 along required part 56, and be formed in the circumference 52 in nonbonding region 50.Release ventilation hole showsGo out for there is different constructions relative to bond area 40 and nonbonding region and relative to circumference passage 60, this can beThis situation, or they can have similar construction.For example, y is shown as in bond area 40 and nonbonding area to passage 61Extend in domain 50, i.e. y crosses over circumference 52 to passage but is not extend to the circumference of thin plate 20.The circumference of passage 61 and thin plate 20It is spaced a distance 66.Distance 66 can be selected as any suitable value, including zero.In the null situation of distance 66, thisA little passages have the construction of passage 63.Similar to passage 61, x is to passage 65 in bond area 40 and nonbonding regionAll extend in 50, and be spaced apart with the circumference of thin plate 20.Passage 67 is completely in nonbonding region 50, and do not reach circumference52.Similarly, passage 69 is completely in nonbonding region 50, but extend to circumference 52.In one kind arrangement, such as the institute of passage 65The arrangement shown, each passage is positioned to conllinear with the straight line portion of circumference passage 60.In another arrangement, such as passage 63,67th, the arrangement shown in 69, straight line portion of each passage perpendicular to circumference passage 60.In another arrangement, such as passage 61Shown arrangement, each passage can align with the bent portion of circumference passage 60.
For all passages 61,63,65,67,69, common ground is to be not extend to touch circumference passage 60.NeedThe circumference 57 of required part is kept high-quality as much as possible.That is, the intensity of part 56 depends, at least partially, on circumference 57Edge strength.Therefore, it may be desirable to avoid damaging circumference 57.When forming passage 61,63,65,67,69, the quarter for hitting its target is spentScoring wheel or laser may cause to damage circumference 57, part 56 needed for thus weakening.On the other hand, it is propagated through towards circumference 57 thinThe passage of plate 20 will be stopped at circumference passage 60 without causing damage to circumference 57.Moreover, each passage is arranged toIn the distance 64 of circumference passage 60.Distance 64 is chosen to≤500 microns, for example≤400 ,≤300 ,≤200 ,≤100 ,≤,≤10 or≤5 microns 50 ,≤25.If distance 64 is more than 500 microns, undesired possibility is there is when spreading,Passage can not merge in desired position with circumference passage 60.
Any appropriate number of passage 61,63,65,67,69 can be used.That is, any suitable total passage can be usedQuantity, or any suitable every kind of passage number of types.But, inventor is had found using relative to each other with variousThe passage of angle arrangement is conducive to part 56 needed for removing.That is, with using only x to type or using only y to type passageCompare, at the same using x to type and y to type passage be favourable.
After all passages 60,61,63,65,67,69 are formed, thin plate 20 bend with by passage 60,61,63,65th, 67,69 along its x to or y to thickness 22 is propagated through so that the circumference passage 60 that merges.Next, as shown in figure 12, leading toCross and come off, such as by attached suction cup 91 and required part 56 is dragged away from carrier 10, come part 56 needed for removing.In order to be conducive toRemove, at part 56 needed for dilatory, can force to be passed through air or liquid between required part 56 and carrier 10.Because requiredThe circumference 57 of part 56 easily removes thin plate 20 without damaging completely in nonbonding region 50 from carrier 10.
The second embodiment of part 56 needed for extracting is explained below in conjunction with Fig. 1,2,8 and 9.In the embodiment, by masterDifference with first embodiment is described, it should be understood that remaining element is similar to those for combining first embodiment and describing, andIn all embodiments, identical reference represents identical element.
In the embodiment, formed as in the first embodiment circumference passage 60 and required passage 61,63,65,67,69.Carrier 10 and thin plate 20 also bend to spread passage 60,61,63,65,67,69.In addition, as shown in figure 9, then when thinWhen plate 20 and carrier 10 are supported by soft elastic base plate 98, depression bar or fracture bar 92 can be used to apply pressure to thin plate 20 and carrier 10Power.Approximately along parallel to the line through passage 61 and the line of passage 63, to being applied on the right side of circumference 57 (circumference passage 60)Plus-pressure, so that passage 61 and 63 is not only propagated through thin plate 20, is also propagated through carrier 10, such as extends through Fig. 9 thicknessShown in the dotted line of degree.That is, being bonded at the boundary 41 between thin plate 20 and carrier 10 is strong, so that these elements are in keyRegion 40 is closed as one.Accordingly, because passage 61,63 extends on the surface of thin plate 20 on boundary 41, when themWhen spreading, passage 61 and 63 can be made is propagated through carrier 10 in addition to being propagated through thin plate 20.The passage spreadsDo not controlled well through carrier 10, the especially outside of bond area, but need not control well.Although in carrierIn the outside of bond area 40 on 10, and/or on thin plate 20 it there may be zigzag on the outside of circumference 57 (circumference passage 60)Edge, main thing is to remove a part of thin plate 20, so that arrow 58 direction of the part 56 for example shown in Fig. 8 needed for allowingSlipped away from carrier 10.I.e., although when drawing on thin plate 20 with away from carrier, the Van der Waals for of any presence mayRelatively strong, these power are weak in shearing.Thus, a part of thin plate 20 and a part of carrier 10 are removed, thus allows instituteNeed part 56 to be slipped away from carrier 10, greatly facilitate part 56 needed for removal.Certainly, the depression bar extended in the x-direction or fractureBar can be used for passage 65 and 69 being propagated through carrier 10, with part 56 needed for allowing along y to the carrier 10 that slips away.
Although score line is shown as being produced on thin plate 20, for forming score line in bond area 40, it is not necessary to be thisSample.That is, at bond area 40, thin plate 20 and carrier 10 are used as one, thus when product is bent, the delineation in any oneLine will be propagated through another.Correspondingly, the score line in bond area can be formed on the thin plate side of product or formedIn carrier side.
Comprised the following steps using mechanical scratching to extract each several part：
1. delineating thin plate along required profile, i.e., form circumference passage 60 in nonbonding region 50 with scribe wheel 90.DelineationWheel type, scoring pressure and delineation speed are chosen to produce the passage of depth 62 (D), and the depth is equal to or more than half thin plateThickness 22 (T), i.e. (D >=0.5T).Before extraction, multiple profiles can be delineated.The profile of delineation can have fillet or can haveTilt corner.
2. forming the array of such as release otch or passage 61,63,65,67 and/or 69, it makes it possible to extract required portionDivide 56.If required part 56 to be extracted have rectangular shape (or round rectangle), should required part 56 each cornerDirection of the place along every side perpendicular to the part forms release ventilation hole (see Fig. 1 and 8).If required part 56 is " big ",One or more of the other release ventilation hole 67 can be formed between each corner.Release otch (passage) should extend close to follow instituteThe circumference passage 60 (preferably in less than 0.5mm) of the profile 57 of part 56 is needed, but they should not be crossed over or " touching " shouldProfile, to avoid damaging the part edge.
3. after the profile of the part is delineated, that is, being formed after circumference passage 60, and forming the (choosing of release ventilation holeFrom one or more types of the passage shown in 61,63,65,67,69) after, should around required part 56 circumference 57 withSlight curvature (curved) flexible glass together of carrier 10, passage is extended through the thickness 22 of thin plate 20, is divided completely with realizingFrom required part 56.
4. by using with surface into close to right angle (for example relative to thin plate 20 surface into 60-90 degree) suction force,To overcome any Van der Waals at nonbonding region 50, the interior part that required part 56 departs from carrier 10 has been comeThe part into needed for extracting without destroying.See Figure 12.
Fig. 8 and 9 shows another extracting method.This method including the use of the release ventilation hole 61 in the top of bond area 40,63 along required part 56 curving and fracture carrier 10, be used as the beginning of fracture.The carrier should be placed on relatively softOn flexible material 98.Passage starts at the release ventilation hole 61 or 63 on bond area 40, and by being produced by fracture bar 92Raw bending stress, crackle is propagated through carrier 10 below thin plate 20 along fracture bar 92.In the extension of carrier 10 and thin plate 20Part to the right side of passage 61,63 is after the right side disconnection of required part 56, and required part 56 can be along the side of arrow 58Slipped away to from carrier.
Alternatively or additionally, mechanical scratching, laser cutting can be used.For example, it can be advantageous to make as follows with reference to Figure 10Use CO2Laser.
Work as CO2Laser beam 94 is used to form circumference passage 60, the circumference 57 of part 56 needed for for cutting, and can be usedThe constructed and array of face description completes the formation and extraction (via coming off or sliding) in release ventilation hole.But, with machineTool delineation is different, CO2Laser being capable of integral cutting thin plate 20.CO2Laser cutting does not require bending carrier 10 and thin plate 20 to causePassage extends through its thickness 22, and thicker carrier 10 is may be advantageously used with so as to be cut by laser.Laser cutting is at least allBoundary's passage 60 also creates the higher quality part edge with higher intensity, and this allows the more reliable process and faster of coming offObtain the required part 56 extracted.For CO2Laser cutting, laser beam 94 is focused on the surface of thin plate 20 small diameter circularLight beam, and moved along the required track followed by cooling nozzles 96.Separation by laser can be started by identical scribe wheel 90,This forms release ventilation hole.Cooling nozzles 96 may, for example, be air nozzle, and it is delivered compressed air to by small diameter boreOn the surface of thin plate.Water or air liquid mist are preferably used, because which increase the gravitation between thin plate 20 and carrier 10.
As seen in figures 11 and 16, a kind of design of nozzle 96 includes head 200, head 200 with 4 small diameter bores 201,202nd, 203,204, to allow to project cooling fluid, for cutting rectangle part.Preferably, bore dia≤1mm.Each hole 201,202nd, 203,204 are used for the cutting in a direction.(the example when corner of the laser beam 94 projected by hole 205 close to circumference holeSuch as, 90 degree rotation), control system (not shown) gradually by a bore closure and opens another hole, for along for example perpendicular toThe direction of first otch forms a kerf.Or, head 200 need not be moved in the vertical direction.That is, the and of hole 201,202,203204, which are shown around head 200, is spaced 90 degree of placements, but need not it can't be otherwise.
Although for cutting substantially rectangular part, above-mentioned 4 Cooling Holes 201-204 arrangements are favourable, difference arrangementsIt is also possible.For example, as shown in figure 16, the first hole 201 can be in shown position, and the second hole 212 can be located at from theThe position that 120 ° clockwise of one hole, and the 3rd hole 213 can be positioned at from the position clockwise another 90 ° of the second hole 212.With this sideFormula, each hole can be used for cutting triangle pattern, for example, pass through the edge first party conllinear with the Cooling Holes 201 of laser hole 205 and firstTo moving-head 200, then the edge line conllinear with the line extended between the hole 212 of laser hole 205 and second is upwards (such as Figure 16 institutesThe direction shown), and then the edge line conllinear with the line extended between the hole 213 of laser hole 205 and the 3rd is downward (such as Figure 16 institutesThe direction shown).Certainly, the Cooling Holes of any requirement can be used to adapt to variously-shaped circumference passage 60.
As shown in figure 17, the design of another nozzle include with a Cooling Holes 201 and rotating mechanism (it is not shown, but itsCan be along the direction rotatable head 200 of arrow 215) head 200, it moves through the corner of circumference passage 60 on head 200Simultaneously, it is allowed to which Cooling Holes 201 follow laser beam (launching from hole 205).As seen from Figure 10,11,16 and 17, laser nozzleIt can be separated with cooling nozzles, or can be conveyed by identical head.
CO2Another advantage of laser is laser beam formation flexible glass and the local heating of carrier, and this can reduce glassBetween gravitation.Laser heating can also cause flexible glass locally corrugation so that extraction process is easier.
Thin plate/vector product and use process
It described above is the situation that one of them required part 56 is formed by the thin plate 20 for being bonded to carrier 10.But, canThe required part 56 of any requirement is made up of the thin plate 20 for being bonded to carrier 10, size and required portion depending on thin plate 20Points 56 size.For example, thin plate can have second generation size or bigger, such as third generation, forth generation, the 5th generation, eighth generationOr bigger (for example, plate size from 100mm x 100mm to 33 meters or bigger of meter x).In order to allow user to determine that he will be from keyBe bonded to carrier 10 a thin plate 20 production required part 56 arrangement, for example on the size of required part 56, quantity andShape, thin plate 20 can be supplied as shown in Figs. 13 and 14.More particularly there is provided have the product with thin plate 20 and carrier 102.Thin plate 20 is bonded to carrier 10 in the bond area 40 around nonbonding region 50.
Bond area 40 is arranged at the circumference of thin plate 20.Advantageously bond area sealed thin at the circumference of product 2Any gap between plate 20 and carrier 10, so that process fluid will not be captured, because otherwise captured process fluidSubsequent technique may be polluted, product 2 is conveyed through the subsequent technique.
Nonbonding region 50 can be by the above method or material is any is formed.But, what is be particularly suitable is to carrierThe releasing layer being made up of a kind of material is coated with, this kind of material maintains itself and thin plate 20 at expected temperature during equipment is processedNonbonding characteristic, but thin plate 20 can be bonded at higher temperatures.For example, releasing layer 30 can have the inorganic of such as oxide-filmMaterial is made.For example, material may be selected from following ITO (indium tin oxide), SiO, SiO2、F-SiO2、SnO2、F-SnO2、Bi2O3、AZO、GAO、Ga2O3、Al2O3、MgO、Y2O3、La2O3、Pr6O11、Pr2O3、Sc2O3、WO3、HfO2、In2O3、ZrO2、Nd2O3、Ta2O5、CeO2、Nb2O5、TiO、TiO2、Ti3O5、F-TiO2, TiN (titanium nitride), TiON (titanium oxynitrides), one in NiO, ZnOPlant or a variety of, or its combination.Suitable metal is for example including aluminium, molybdenum and tungsten.When being heated at a temperature of about 450 DEG C to 600 DEG C,Such material will not be bonded with thin glass sheet 20.But, when being heated to (predetermined temperature >=625 DEG C), or selectively, heatingAt temperature in 100 degree of the strain point of thin glass plate, or in certain embodiments, such as the strain point in thin glass plateIn 50 degree, thin glass plate 20 will be bonded to.In some cases, can use the metal of sputtering, such as Ti, Si, Sn, Au, Ag,Al、Cr、Cu、Mg.Therefore, even if product is processed at a temperature of up to 450 DEG C to 600 DEG C, the nonbonding region 50 is still protectedHold the ability of its part for discharging thin plate 20.On the other hand, by being heated to predetermined temperature, the part of releasing layer 30 can be chosenSelecting property it is bonded to thin glass plate 20.This local heating can for example pass through laser, other rasterisation thermals source, heater strip or senseHeater is answered to realize.For nonbonding region, other suitable materials include, more generally, metal oxide, metal oxynitrideCompound or metal nitride, wherein the metal ingredient can include In, Si, Sn, Bi, Zn, Ga, Al, Mg, Ca, Y, La, Pr,Sc, W, Hf, Zr, Nd, Ta, Ce, Nb, Ti, Mo, or its combination.
Description is now realized to the ad hoc fashion of this function, that is, allows to be bonded to the week around thin plate 20 in thin plate 20After the carrier 10 on boundary, variously-shaped bond area 40 is formed.This ad hoc fashion includes：By sputtering or PECVD, nextBy the hot dehydrogenation of film surface, deposited about on carrier (being made up of glass, such as the Eagle codes glass of Corning Incorporated)For the thick silicon fimls of 100-500nm, and sputter on the back side of thin plate 20 the thick metal films of 100-500nm.Metal is chosen toIt forms silicide under high temperature (for example, >=600 DEG C) with silicon, and causes it to have foot due to the grain size in sputteringEnough surface roughnesses (for example, Ra >=2nm), to form nonbonding region.The part irradiated by laser through carrier 10 addsHeat can make silicon and metal react, to form refractory metal silicide and form bond area 40.Suitable metal is included (simultaneouslyIt is not limited only to) aluminium, molybdenum and tungsten.
In order to make the required part 56 of requirement on a product 2, making has what is surrounded by bonding profile line 42Requirement nonbonding region 50.See Figure 15.Bonding profile line 42 can be retouched optionally through with required shape selectiveLaser is painted, releasing layer 30 is locally heated to predetermined temperature, releasing layer will be bonded and be sealed air tight to thin plate at such a temperature20.Then, fabricated product 2, so that the forming apparatus in the region limited by contour line 42.After device processing, required portionDivide 56 any through the above way can be separated from carrier 10.If necessary to which required part 56 is slipped away from carrier, product 2 canCut first by any pattern or subset along dotted line 5 between the suitable profile line of adjacent contour line 42, be cut into and appointThe component of what more smallest number.Alternately, product 2 can be along a plurality of wire cutting, and these lines are fabricated to so as to limiting required portionThe circumference passage of 56 circumference 57 is divided to intersect.In this way, similar to above in conjunction with described by Fig. 8 and 9, it is necessary to lessStep is come part 56 needed for being slipped away from carrier.After cut product 2, the other devices that can occur on thin plate 20 addWork.
Conclusion
The test of product (in the situation, the thin glass on carrier) sealing, including liquid can be realized by multiple methodsOr gas invades or left vision or the spectral photometry in any region on sealing article.
It should be emphasized that, the above embodiment of the present invention, particularly any " preferable " embodiment are only the possibility of embodimentExample, only illustrates the various principles for being used for being clearly understood that the present invention.Can be not deviate substantively from the spiritual and various of the present inventionIn the case of principle, the above-mentioned embodiment to the present invention carries out many changes and adjustment.All these changes and modification existThis is intended to be included in the range of the disclosure and claims below.