A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-widebandTechnical field
The present invention relates to semiconductor integrated circuit technical field, especially a kind of high-power high-isolation of millimeter wave ultra-widebandIntegrated single-pole double-throw switch (SPDT).
Background technology
Switch is commonly applied in radio frequency transceiver, is positioned over receiver inlet and emitter output end, for controlling to connectReceive the switching with emission state.Because position is special, the linearity of switch is the restriction of Receiver And Transmitter overall linearityFactor.Transmitter output signal power is very high, and receiver typically has very high sensitivity, if the isolation of switch is notEnough, the high-power signal of the moment transmitting of on off state switching is easy to pour in down a chimney into receiver, causes receiver to damage.Therefore,For high-power transceiver, one has the switch of high power capacity and high-isolation extremely critical.
In E wave bands, substantially, FET is not to be regarded as simple ideal element to the distributed effects of device, its source electrodePhysical dimension is larger, can introduce parasitic parameter.Likewise, the stray inductance that a bit of transmission line is introduced also is produced to circuit performanceVery big influence.How parasitic parameter is reduced, be a huge challenge for designing ultra wide band millimetre-wave circuit.
In general, the power capacity of PIN diode be better than FET, but PIN diode usually require it is extraDC bias circuit, consumes more multi-energy, also results in slower switching speed.Using FET Stack Technology, Ke YitiHigh power capacity.But FET is simply stacked, cause chip layout not compact, while bandwidth of operation relative narrower.
The method for improving isolation is to reduce the signal leakage of switch in the off case, signal wire and FET itBetween add quarter-wave transmission line, reduce the coupling between FET and passive structures, can carry switch isolation degreeHeight, but it is only applicable to arrowband design.Accordingly, it would be desirable to invent a kind of structure for effectively reducing parasitic parameter, make integrated hilted broadsword doubleThrow switch has high-power and high-isolation performance concurrently in very wide millimeter wave frequency band.
The content of the invention
The technical problems to be solved by the invention are that there is provided a kind of integrated list of the high-power high-isolation of millimeter wave ultra-widebandDouble-pole double throw switch, it is possible to increase bandwidth of operation, power capacity and the isolation of switch.
In order to solve the above technical problems, the present invention provides a kind of high-power high-isolation of millimeter wave ultra-wideband integrated hilted broadsword pairThrow switch, including a power splitter 1 and 2 single-pole double-throw switch (SPDT)s 2, each single-pole double-throw switch (SPDT) 2 include 6 identicals and stack fieldEffect pipe unit 3；One end of power splitter 1 is as signal input part, and the other end point two-way connection single-pole double-throw switch (SPDT) 2 is single per roadDouble-pole double throw switch 1 includes the 6 stacking FET unit 3 being sequentially connected connection signal output parts.
It is preferred that, stack in FET 3, the source electrode of first FET as signal wire a part, secondThe drain electrode of FET is connected with ground hole, and the drain electrode of first FET and the source electrode of second FET pass through one sectionShorter transmission line is connected.The clever structure eliminates the stray inductance for deteriorating switch high-frequency performance, while considerably increasing outThe power capacity of pass.
It is preferred that, single-pole double-throw switch (SPDT) is realized using 0.1 micron gallium arsenide gallium semiconductor integrated circuit technique, section of the techniqueOnly frequency is 135GHz, and breakdown voltage is 9V, can realize high power device in E wave bands.
It is preferred that, refer to FET using four, minimum two refer to FET.Power capacity is further increased, meanwhile,Compact distributed frame reduces chip size and the advantage of raising bandwidth of operation obtains bigger play.
It is preferred that, the transmission line width stacked between FET unit is equal with grid width.So whole signal line widthDegree is identical, without discontinuity.Meanwhile, transmission line is bent during cloth version, further reduces chip size.
It is preferred that, the grid of FET is connected to control voltage pin by three kilohms of resistance.Realize signal and controlVoltage processed is effectively isolated, and grid does not have electric current, therefore switch does not consume power.
It is preferred that, switch chip has the pin of two control voltages, and two paths of signals break-make is controlled respectively.Control voltage amplitudeFor 0V, -3V.
It is preferred that, each branch road is switched using six stacking FET units, and unit number can increase, can also subtractFew, simulation result shows, during using six units, and isolation is high, and insertion loss can also receive.
Beneficial effects of the present invention are：The compact distributed frame of proposition, considerably increases the power capacity of switch, goesStray inductance except deteriorating switch high-frequency performance, reduces the size of chip, the bandwidth of operation of switch is improved, in millimeter waveDuan Xiaoguo is especially apparent；Isolation is high；For referring to FET, the advantage of this compact distributed frame maximum can be sent out moreWave；Without direct current biasing, consumed energy, is not controlled simple.The compact distribution of proposition stacks FET unit can be withFor millimeter wave attenuator, phase shifter etc., reduce chip size, improve bandwidth of operation and power capacity, increase isolation.
Brief description of the drawings
Fig. 1 is the principle schematic of the single-pole double-throw switch (SPDT) of the present invention.
Fig. 2 is the domain schematic diagram of traditional distributed switch.
Fig. 3 is that new compact distribution stacks FET cell layout schematic diagram.
Fig. 4 is simulation result schematic diagram of the traditional distributed switch performance with connection length of transmission line change.
Fig. 5 is emulation and the test result schematic diagram of the switch insertion loss and isolation of the present invention.
Fig. 6 is the switch input return loss of the present invention and the emulation for exporting return loss and test result schematic diagram.
Fig. 7 is that the switch of the present invention inputs the test result schematic diagram of 1dB compression points at three Frequency points.
Embodiment
The integrated single-pole double-throw switch (SPDT) of the high-power high-isolation of millimeter wave ultra-wideband that the present invention is provided, is employed a kind of newCompact distributed frame and FET Stack Technology, can realize ultra wide band with less circuit area, have concurrently it is high-power andThe integrated single-pole double-throw switch (SPDT) of millimeter wave of high-isolation performance.
As shown in figure 1, the integrated single-pole double-throw switch (SPDT) of the high-power high-isolation of millimeter wave ultra-wideband of the present invention includes a work(It is divided to device, two single-pole single-throw switch (SPST)s.The single-pole single-throw switch (SPST) includes six identicals and stacks FET unit, using one kindNew compact distributed frame is connected.
As shown in Fig. 2 FET drain electrode and signal wire pass through transmission line TL in traditional distributed switchPARIt is connected, passesDefeated line TLPAREquivalent to stray inductance, millimetre-wave circuit is extremely sensitive to it, causes switch to be inserted after frequency is higher than 60GHzLoss and isolation performance deteriorate rapidly, and simulation result is as shown in Figure 4.While the transmission line TL between each FET unitCONIt is longDegree is restricted, and it can not be less than the width of ground hole, and the size in normally grounded hole is again very big, and this makes fabric swatch lack flexibility.
Fig. 3 is the domain of the FET unit of composition switch.Different from traditional distributed structure, the stacking field-effectThe source electrode of first FET is used as a part for signal wire, and the drain electrode of second FET and ground hole in pipe unitIt is connected, the drain electrode of first FET is connected with the source electrode of second FET by one section of shorter transmission line.This is newStructure eliminates the transmission line TL of the drain electrode of connection FET and signal wirePAR, simultaneous transmission line TLCONLength be no longer limited byGround hole size, its length selection has more flexibilities.The size of distributed switch is so reduced, its work is improvedBandwidth.FET unit is using stacking FET technology so that the voltage that wherein each pipe is born is the one of total voltageHalf, substantially increase the power capacity of switch.
Fig. 5 is emulation and the test result of switch insertion loss and isolation.It can be seen that in 30-75GHz frequenciesSection, switch insertion loss is less than 3dB, and isolation is higher than 40dB.In 10-95GHz frequency ranges, switch keeps excellent more than 30dB'sIsolation.And the isolation of general fet switch is between 20dB to 30dB, bandwidth of operation is opened far below the present invention'sClose.
Fig. 6 is emulation and the test result for switching input return loss and exporting return loss.It can be seen that30-110GHz frequency ranges, the input and output return loss of switch is superior to 10dB, shows good broadband performance.
Fig. 7 is the test result that switch inputs 1dB compression points at three Frequency points.It can be seen that switchIt is 20.2dBm that 1dB compression points, which are inputted, at 31GHz, is 17.8dBm at 40GHz, is 17.3dBm at 45GHz.Due to openingClose bandwidth of operation too big, two driving amplifier has been used during test.They are to be operated in 28-31GHz input 1dB compressions respectivelyHigh-power amplifier and be operated in the mid power power amplifier that 34-46.5GHz input 1dB compression points are+22dBm that point is+35dBm.In higher millimeter wave frequency band, due to lacking the power amplifier of enough power, so without test result.
The integrated single-pole double-throw switch (SPDT) of the high-power high-isolation of millimeter wave ultra-wideband of the present invention is integrated using gallium arsenide semiconductorCircuit technology is realized.The compact distribution of proposition stacks FET unit and can be also used for millimeter wave attenuator, phase shifterDeng reducing chip size, improve bandwidth of operation and power capacity, increase isolation.
Although the present invention is illustrated and described with regard to preferred embodiment, it is understood by those skilled in the art thatWithout departing from scope defined by the claims of the present invention, variations and modifications can be carried out to the present invention.