Combined finisher with bitellos monocrystallineTechnical field
The present invention relates to a kind of combined finisher, espespecially a kind of combined finisher with bitellos monocrystalline.
Background technology
In the semiconductor industry, especially under the less and less development trend of current line width, the planarization step of crystal column surfaceRapid more crucial, current high-order processing procedure reaches global planarization effect using cmp technology comprehensively.
But because polishing pad constantly can be produced and rubbed with wafer in CMP step so that on polishing padRill fades away, and cutting, the reaction product produced in CMP step etc. can all accumulate in polishing pad graduallyIn the micro-grooves on surface, easily cause polishing pad passivation, block, cause pad interface to deteriorate, easily wafer is produced and lackedFall into, therefore, grinding mat trimmer (pad dresser) then turn into cmp (CMP) processing procedure maintain wafer planarization,The key of even property, to the finishing polishing pad of appropriateness, allows well polishing pad to recover the surface characteristic of script.
The content of the invention
In order to reach above-mentioned purpose, the present invention provides a kind of combined finisher with bitellos monocrystalline, and its feature existsIn including：
One large substrates, with a plurality of storage tanks；And
A plurality of grinding units, are arranged at the storage tank of the large substrates, and the grinding unit is positioned over this including one and housedThe small substrate and a plurality of bitellos grindings being arranged on the small substrate of the sponge of one bottom surface of groove, one on the spongeParticle, the bitellos abrasive grains have a particle diameter for being not less than 300 microns；
Wherein, the sponge has a compression height not less than 50 microns and causes the wammel in the highest grinding unitThe difference in height of the cusp of stone abrasive grains and the cusp of the bitellos abrasive grains in secondary high grinding unit is less than 20 microns,First high cusp of the bitellos abrasive grains in single mill unit and the difference in height of the tenth high cusp are less than 20 microns,It is micro- that first high cusp of the bitellos abrasive grains in single mill unit is less than 40 with the difference in height of the 100th high cuspRice, and the projecting height of the high cusp of the bitellos abrasive grains first is more than 50 microns.
Therefore, compared to the CMP pad dresser of known techniques, present invention employs particle diameter is micro- not less than 300The bitellos abrasive grains of rice, when repairing grinding pad, by compared to the trimmer of the less diamond abrasive particle of known particle diameterWith more preferable finishing performance；And, and the present invention adjusts the height of the grinding unit using the sponge so that the highest grindingThe height of the cusp of bitellos abrasive grains in unit and the cusp of the bitellos abrasive grains in secondary high grinding unitDifference is less than the first high cusp and the tenth high the cusp height of the bitellos abrasive grains in 20 microns, single mill unitDifference is less than the first high cusp and the height of the 100th high cusp of the bitellos abrasive grains in 20 microns, single mill unitDegree difference is less than 40 microns, and the first high cusp protrudes the height of the binder course more than 50 microns, and then makes the grinding unitOn the cusp high consistencies of bitellos abrasive grains lifted.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of one embodiment of the invention；
Fig. 2 to Fig. 5 is the manufacturing process schematic diagram of one embodiment of the invention；
Wherein, 10, large substrates；11st, storage tank；111st, bottom surface；12nd, upper surface；20th, grinding unit；21st, sponge；22nd, it is smallSubstrate；23rd, bitellos abrasive grains；24th, resin material；30th, rigid template；31st, face is compressed.
Embodiment
Below, collocation schema is described in detail the present invention.
Refer to Fig. 1, the present invention is a kind of combined finisher with bitellos monocrystalline, including a large substrates 10 andA plurality of grinding units 20, the large substrates 10 have a plurality of storage tanks 11, and the grinding unit 20 is arranged at the large substrates 10The storage tank 11, the sponge 21, one that the grinding unit 20 includes a bottom surface 111 for being positioned over the storage tank 11 is located at the spongeSmall substrate 22 and a plurality of bitellos abrasive grains 23 being arranged on the small substrate 22 on 21, the bitellos abrasive grains23 have a particle diameter for being not less than 300 microns.A resin material 24 penetrates into system in the sponge 21, the resin material 24 it is hardened andThe grinding unit 20 is fixed in the storage tank 11, in one of present invention embodiment, the resin material 24 is epoxy resinOr phenolic resin.
Present invention system adjusts the prominent of the big diamond abrasive particle 23 of the grinding unit 20 using one of the sponge 21 compressibilityGo out the distance of tip to one of the large substrates 10 upper surface 12 of height, i.e. the bitellos abrasive grains 23.Wherein, the sponge 21Cause with a compression height not less than 50 microns the cusps of bitellos abrasive grains in the highest grinding unit withThe difference in height of the cusp of bitellos abrasive grains 23 in secondary high grinding unit 20 is less than 20 microns, single mill unit 20In bitellos abrasive grains 23 the first high cusp and the tenth high cusp difference in height be less than 20 microns, single mill listFirst high cusp of the bitellos abrasive grains 23 in member 20 and the difference in height of the 100th high cusp are less than 40 microns, and shouldThe projecting height of the high cusp of bitellos abrasive grains 23 first is more than 50 microns.
In one of present invention embodiment, the particle diameter of the bitellos abrasive grains 23 is not less than 500 microns；In the present invention'sIn another embodiment, the particle diameter of the bitellos abrasive grains 23 is between 500 microns to 800 microns.And, the grinding unit 20The area for covering the large substrates 10 accounts for less than the 40% of the total surface area of large substrates 10 1.The grinding unit 20 is according to a patternIt is arranged on the large substrates 10, the pattern can be individual pen, double-round, multi-turn, radial, helical form or its combination.
In an embodiment, the combined finisher can be made using following steps：
Step S1：Referring to Fig. 2, first providing a large substrates 10, the large substrates 10 have a plurality of storage tanks 11, by plural numberIndividual sponge 21 is positioned over a bottom surface 111 of the storage tank 11 of the large substrates 10, then as shown in figure 3, a resin material 24 is oozedEnter the sponge 21, in one of present invention embodiment, the resin material 24 is epoxy resin or phenolic resin.
Step S2：Referring to Fig. 4, a small substrate 22 for being fixed with a plurality of bitellos abrasive grains 23 is respectively arranged atIn the storage tank 11, the bitellos abrasive grains 23 have a particle diameter for being not less than 300 microns.
Step S3：Please continue to refer to Fig. 4, compress face 31 with the one of a rigid template 30 and compress the bitellos abrasive grains23, make the projecting height of the bitellos abrasive grains 23 can be more aligned, as shown in figure 4, the different grinding units 20 shouldIt is with a difference in height D, but with the rigid template 30 between bitellos abrasive grains 22 before not compressed with the rigid template 30After compressing, difference in height D will lower or disappear.
Step S4：Referring to Fig. 5, hardening the resin material 24, and the resin material 24 is sticked together the grinding unit 20 and consolidateDue on the large substrates 10.It is to have carried out the bitellos abrasive grains 23 that step S3 allows on the small substrate 22 because upon hardeningHeight it is more flat, therefore protrusion of each bitellos abrasive grains 23 at a distance of one of the large substrates 10 upper surface 12 after hardeningDifference in height can reduce, to be planarized up to height.
In summary, compared to the CMP pad dresser of known techniques, it is not less than present invention employs particle diameter300 microns of bitellos abrasive grains, when repairing grinding pad, by repairing compared to the less diamond abrasive particle of known particle diameterWhole utensil has preferably finishing performance；And the present invention adjusts the height of the grinding unit using the sponge so that highest this grindThe height of the cusp of bitellos abrasive grains in mill unit and the cusp of the bitellos abrasive grains in secondary high grinding unitDegree difference is less than the first high cusp and the height of the tenth high cusp of the bitellos abrasive grains in 20 microns, single mill unitDegree difference is less than 20 microns, the first high cusp and the 100th high cusp of the bitellos abrasive grains in single mill unit itDifference in height is less than 40 microns, and the first high cusp protrudes the height of the binder course more than 50 microns, and then makes the grinding listThe cusp high consistency of bitellos abrasive grains in member is lifted.
Above-described embodiment is illustrated only for conveniently explanation, and the interest field that the present invention is advocated should be wanted with right certainlyAsk described to be defined, rather than be only limitted to above-described embodiment.