技术领域technical field
本发明涉及MEMS传感器领域，具体是微加工电容超声换能器，特别是一种用于医学成像的微加工电容超声换能器面阵及其制备方法。The invention relates to the field of MEMS sensors, in particular to a micromachining capacitive ultrasonic transducer, in particular to a micromachining capacitive ultrasonic transducer area array for medical imaging and a preparation method thereof.
背景技术Background technique
随着微机电系统（Micro electromechanical system，MEMS）和微纳米技术的快速发展，MEMS超声传感器（micro-electromechanical systems ultrasonic transducer，简称MUT）的应用也越来越广泛，它是一种采用了微机械加工技术制作的新型传感器，相比较于传统的超声传感器，MEMS超声传感器具有低成本、低功耗、宽频带、高灵敏度、方便与后续电路集成以及易携带等优势，具有广阔的应用前景。MUT主要包括压电超声传感器（Piezoelectric MUT）、压阻式超声传感器（Piezoresistive MUT）以及电容式超声传感器（Capacitive MUT）等。其中，压阻式超声传感器制作工艺与CMOS兼容性比较好，且后续电路简单，并可集成到同一芯片上，但是由于其工作频率不高，在高频领域应用较少。压电式超声传感器在超声领域中应用较为广泛，但是由于普通的压电材料与空气之间的不耦合现象非常严重，所以压电超声传感器的效率并不高。而电容式超声传感器（CMUT）由于采用了表面微加工工艺，因此不存在压电传感器的那些缺点，并且电容式传感器具有结构简单、分辨率高、工作可靠、动态响应快、可非接触测量、并能在高温、辐射和强烈震动等恶劣条件下工作等优点已在工农业生产的各个领域得到广泛应用。With the rapid development of micro-electromechanical system (MEMS) and micro-nano technology, the application of MEMS ultrasonic transducer (micro-electromechanical systems ultrasonic transducer, referred to as MUT) is becoming more and more extensive. Compared with traditional ultrasonic sensors, MEMS ultrasonic sensors have the advantages of low cost, low power consumption, wide frequency band, high sensitivity, convenient integration with subsequent circuits, and easy portability, and have broad application prospects. MUT mainly includes piezoelectric ultrasonic sensor (Piezoelectric MUT), piezoresistive ultrasonic sensor (Piezoresistive MUT) and capacitive ultrasonic sensor (Capacitive MUT). Among them, the manufacturing process of the piezoresistive ultrasonic sensor is more compatible with CMOS, and the follow-up circuit is simple, and can be integrated into the same chip. However, due to its low operating frequency, it is rarely used in the high-frequency field. Piezoelectric ultrasonic sensors are widely used in the field of ultrasound, but the efficiency of piezoelectric ultrasonic sensors is not high due to the serious uncoupling phenomenon between ordinary piezoelectric materials and air. The capacitive ultrasonic sensor (CMUT) does not have the disadvantages of the piezoelectric sensor due to the surface micromachining process, and the capacitive sensor has the advantages of simple structure, high resolution, reliable operation, fast dynamic response, non-contact measurement, And the advantages of being able to work under harsh conditions such as high temperature, radiation and strong vibration have been widely used in various fields of industrial and agricultural production.
发明内容Contents of the invention
本发明的目的是为了解决上述现有技术中存在的问题，而提供了一种医用微电容超声换能器面阵探头及其制备方法。The object of the present invention is to provide a medical microcapacitance ultrasonic transducer area array probe and a preparation method thereof in order to solve the above-mentioned problems in the prior art.
本发明是通过如下技术方案实现的：The present invention is achieved through the following technical solutions:
一种医用微电容超声换能器面阵探头，包括硅衬底，所述硅衬底的上表面为氧化层，所述氧化层的上表面开设有若干空腔，所述氧化层的上表面键合振动薄膜，所述振动薄膜的上表面设隔离层，围绕隔离层的四周边缘处及其内部开设有下沉的隔离槽，所述隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上；所述隔离层的上表面上正对每个空腔的中心位置处设有上电极。A medical microcapacitance ultrasonic transducer area array probe, comprising a silicon substrate, the upper surface of the silicon substrate is an oxide layer, the upper surface of the oxide layer is provided with a number of cavities, the upper surface of the oxide layer Bonding the vibrating film, the upper surface of the vibrating film is provided with an isolation layer, and a sinking isolation groove is opened around the periphery of the isolation layer and inside, after the isolation groove penetrates the isolation layer and the vibrating film, the bottom of the groove is opened On the oxide layer; on the upper surface of the isolation layer, an upper electrode is provided at the center of each cavity.
所述氧化层上的若干空腔位于同一隔离区域内后形成一个阵元；所述隔离层的上表面位于一个阵元内的边缘处位置设有一个焊盘，一个阵元内每排的两个相邻上电极之间以及每列的两个相邻上电极之间通过金属引线连接，所述焊盘与离其最近的一个上电极之间通过金属引线连接。A number of cavities on the oxide layer are located in the same isolation area to form an array element; the upper surface of the isolation layer is located at the edge of an array element and a pad is provided, and two of each row in an array element Two adjacent upper electrodes and two adjacent upper electrodes in each column are connected through metal wires, and the pad is connected with the nearest upper electrode through metal wires.
所述硅衬底背面注入磷，并进行金属溅射形成下电极。Phosphorus is injected into the back of the silicon substrate, and metal sputtering is performed to form a lower electrode.
多个阵元成排、列对齐布置，形成CMUT面阵，该面阵排列为M*N，构成医用微电容超声换能器面阵探头。A plurality of array elements are aligned in rows and columns to form a CMUT area array, and the area array is arranged as M*N to form a medical microcapacitance ultrasonic transducer area array probe.
工作时，在该面阵探头的上下电极上施加直流电压，两极板之间将产生静电力，在静电力的作用下振动薄膜被拉向衬底，此时在上下电极上施加与振动薄膜工作频率相同的交变电压，这样会使薄膜不断振动，实现发射超声波的功能。当施加有一定直流偏置电压的振动薄膜上作用有外界声压时，真空腔体距离改变，电容变化，外部电路可将电容变化引起的电流转换为可测的电压信号，实现了超声波的接收。When working, apply a DC voltage to the upper and lower electrodes of the area array probe, and an electrostatic force will be generated between the two plates. Under the action of the electrostatic force, the vibrating film is pulled to the substrate. Alternating voltage with the same frequency will make the film vibrate continuously and realize the function of emitting ultrasonic waves. When external sound pressure acts on the vibrating film with a certain DC bias voltage, the distance of the vacuum cavity changes, the capacitance changes, and the external circuit can convert the current caused by the capacitance change into a measurable voltage signal, realizing the reception of ultrasonic waves .
上述医用微电容超声换能器面阵探头的制备方法，包括如下步骤：The preparation method of the above-mentioned medical microcapacitance ultrasonic transducer area array probe comprises the following steps:
（1）、选择硅片和SOI晶片，并进行标准RCA清洗；(1), select silicon wafer and SOI wafer, and perform standard RCA cleaning;
（2）、对硅片进行氧化处理，使其上下表面都形成氧化层；(2) Oxidize the silicon wafer to form an oxide layer on the upper and lower surfaces;
（3）、在硅片上表面的氧化层上进行光刻，刻蚀出若干空腔；(3) Perform photolithography on the oxide layer on the upper surface of the silicon wafer to etch a number of cavities;
（4）、对硅片进行标准RCA清洗并进行激活，激活后使硅片上表面的氧化层与SOI晶片进行低温键合；(4) Carry out standard RCA cleaning and activation on the silicon wafer. After activation, the oxide layer on the upper surface of the silicon wafer is bonded to the SOI wafer at a low temperature;
（5）、键合后用TMAH溶液对SOI晶片的衬底硅进行腐蚀，清洗后再用BOE溶液腐蚀掉硅片下表面上的氧化层和SOI晶片上的氧化层，此时的硅片即为硅衬底、SOI晶片剩余的硅层即为振动薄膜；(5) After bonding, use TMAH solution to etch the substrate silicon of the SOI wafer, and after cleaning, use BOE solution to etch the oxide layer on the lower surface of the silicon wafer and the oxide layer on the SOI wafer. At this time, the silicon wafer is The silicon substrate and the remaining silicon layer of the SOI wafer are the vibration film;
（6）、采用LPCVD工艺在振动薄膜上沉积一层二氧化硅层作为隔离层；(6) Deposit a layer of silicon dioxide on the vibrating film as an isolation layer by LPCVD process;
（7）、在隔离层的上表面溅射金属，并用剥离的方法形成上电极和焊盘；(7) Sputter metal on the upper surface of the isolation layer, and form the upper electrode and pad by stripping;
（8）、围绕隔离层的四周边缘处及内部刻蚀出隔离槽，形成阵元阵列，并用TMAH溶液腐蚀出隔离槽，隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上；(8) Isolation grooves are etched around the edges and inside of the isolation layer to form an element array, and the isolation grooves are etched out with TMAH solution. After the isolation grooves penetrate the isolation layer and the vibrating film, the bottom of the grooves is opened on the oxide layer ;
（9）、通过金属引线连接各上电极及焊盘；(9) Connect the upper electrodes and pads through metal leads;
（10）、在硅片的背面注入磷，与硅片形成良好的欧姆接触，并溅射金属形成下电极。(10) Phosphorus is implanted on the back of the silicon wafer to form a good ohmic contact with the silicon wafer, and metal is sputtered to form the lower electrode.
本发明设计合理，该医用微电容超声换能器面阵探头具有结构新颖、重量轻、体积小，具有可控性高、灵敏度大、杂散电容小等优点，具有很好的市场推广应用价值。The design of the invention is reasonable, and the medical microcapacitance ultrasonic transducer area array probe has the advantages of novel structure, light weight, small volume, high controllability, high sensitivity, small stray capacitance, etc., and has good market promotion and application value .
附图说明Description of drawings
图1表示本发明换能器面阵的结构示意图。Fig. 1 shows the structure diagram of the transducer area array of the present invention.
图2-1表示本发明A部分换能器阵元（正六边形）的结构示意图。Fig. 2-1 shows the structural diagram of the transducer array element (regular hexagon) of part A of the present invention.
图2-2表示本发明A部分换能器阵元（圆形）的结构示意图。Fig. 2-2 shows the structural diagram of the transducer array element (circle) of part A of the present invention.
图3表示图1中B部分（也为一个单元cell）的剖视图。FIG. 3 shows a cross-sectional view of part B (also a unit cell) in FIG. 1 .
图4表示本发明换能器制备方法中步骤2）的示意图。Fig. 4 shows a schematic diagram of step 2) in the transducer manufacturing method of the present invention.
图5表示本发明换能器制备方法中步骤3）的示意图。Fig. 5 shows a schematic diagram of step 3) in the transducer manufacturing method of the present invention.
图6表示本发明换能器制备方法中步骤4）的示意图。Fig. 6 shows a schematic diagram of step 4) in the transducer manufacturing method of the present invention.
图7表示本发明换能器制备方法中步骤5）的示意图。Fig. 7 shows a schematic diagram of step 5) in the transducer manufacturing method of the present invention.
图8表示本发明换能器制备方法中步骤6）的示意图。Fig. 8 shows a schematic diagram of step 6) in the transducer manufacturing method of the present invention.
图9表示本发明换能器制备方法中步骤7）的示意图。Fig. 9 shows a schematic diagram of step 7) in the transducer manufacturing method of the present invention.
图10表示本发明换能器制备方法中步骤8）的示意图。Fig. 10 shows a schematic diagram of step 8) in the transducer manufacturing method of the present invention.
图中：1-硅衬底，2-氧化层，3-空腔，4-振动薄膜，5-隔离层，6-隔离槽，7-上电极，8-焊盘，9-金属引线。In the figure: 1 - silicon substrate, 2 - oxide layer, 3 - cavity, 4 - vibration film, 5 - isolation layer, 6 - isolation groove, 7 - upper electrode, 8 - welding pad, 9 - metal lead.
具体实施方式detailed description
下面结合附图对本发明的具体实施例进行详细说明。Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
一种医用微电容超声换能器面阵探头，如图1所示，由多个阵元A成排、列对齐布置，形成CMUT面阵探头，该面阵可排列为M*N， 其中M可取值16~512，N可取值16~512。A medical microcapacitance ultrasonic transducer area array probe, as shown in Figure 1, is arranged in rows and columns by a plurality of array elements A to form a CMUT area array probe, and the area array can be arranged as M*N, where M The possible value is 16~512, and the value of N is 16~512.
如图3所示，表示每个阵元中单个cell的剖视图，包括硅衬底1，硅衬底1的上表面为氧化层2，氧化层2的上表面开设有若干圆柱形或者正六边形空腔3，如图2-1，2-2所示，若干空腔3成排、列对齐布置或对角布置，氧化层2的上表面键合振动薄膜4，振动薄膜4的上表面设隔离层5，围绕隔离层5的四周边缘处及内部开设有下沉的隔离槽6（隔离槽用于隔开各阵元），隔离槽6贯穿隔离层5和振动薄膜4后，其槽底开设于氧化层2上。隔离层5的上表面上正对每个空腔3中心的位置处设有上电极7（形成图形化上电极），氧化层2上的若干空腔3位于同一隔离区域内后形成一个阵元；隔离层5的上表面位于一个阵元内的边缘处位置设置有一个焊盘8，一个阵元内每排的两个相邻上电极7之间以及每列的两个相邻上电极7之间通过金属引线9连接，焊盘8与离其最近的一个上电极7之间通过金属引线9连接，形成一个阵元。As shown in Figure 3, it shows a cross-sectional view of a single cell in each array element, including a silicon substrate 1, the upper surface of the silicon substrate 1 is an oxide layer 2, and the upper surface of the oxide layer 2 is provided with several cylindrical or regular hexagons. Cavities 3, as shown in Figures 2-1 and 2-2, several cavities 3 are arranged in rows, columns, or diagonally, the upper surface of the oxide layer 2 is bonded to the vibration film 4, and the upper surface of the vibration film 4 is set The isolation layer 5 is provided with a sinking isolation groove 6 around the periphery and inside of the isolation layer 5 (the isolation groove is used to separate each array element). After the isolation groove 6 runs through the isolation layer 5 and the vibration film 4, the bottom of the groove Set on the oxide layer 2. On the upper surface of the isolation layer 5, an upper electrode 7 is provided at the position facing the center of each cavity 3 (forming a patterned upper electrode), and several cavities 3 on the oxide layer 2 are located in the same isolation area to form an array element The upper surface of the isolation layer 5 is located at the edge of an array element, and a pad 8 is provided, between two adjacent upper electrodes 7 in each row and two adjacent upper electrodes 7 in each column in an array element The pads 8 are connected with the nearest upper electrode 7 through the metal leads 9 to form an array element.
上述医用微电容超声换能器面阵探头的制备方法，包括如下步骤：The preparation method of the above-mentioned medical microcapacitance ultrasonic transducer area array probe comprises the following steps:
1）、选择6寸硅片和6寸SOI晶片，并进行标准RCA清洗，去除各种有机物、金尘埃和自然氧化层等，电阻率为0.01~0.08Ω.cm；1) Select 6-inch silicon wafer and 6-inch SOI wafer, and perform standard RCA cleaning to remove various organic matter, gold dust and natural oxide layer, etc., with a resistivity of 0.01~0.08Ω.cm;
2）、对硅片进行氧化处理，使其上下表面都形成氧化层，如图4所示；2) Oxidize the silicon wafer to form an oxide layer on the upper and lower surfaces, as shown in Figure 4;
3）、在硅片上表面的氧化层上进行光刻，刻蚀出若干圆柱形空腔，如图5所示；3) Perform photolithography on the oxide layer on the upper surface of the silicon wafer to etch a number of cylindrical cavities, as shown in Figure 5;
4）、对硅片进行标准RCA清洗并进行激活，激活后使硅片上表面的氧化层与SOI晶片进行低温键合，如图6所示；4) Carry out standard RCA cleaning and activation on the silicon wafer. After activation, the oxide layer on the upper surface of the silicon wafer is bonded to the SOI wafer at a low temperature, as shown in Figure 6;
5）、键合后用TMAH溶液对SOI晶片的衬底硅进行腐蚀，清洗后再用BOE溶液腐蚀掉硅片下表面上的氧化层和SOI晶片上的氧化层，此时的硅片即为硅衬底、SOI晶片剩余的硅层即为振动薄膜，如图7所示；5) After bonding, use TMAH solution to etch the substrate silicon of the SOI wafer, and after cleaning, use BOE solution to etch off the oxide layer on the lower surface of the silicon wafer and the oxide layer on the SOI wafer. At this time, the silicon wafer is The remaining silicon layer of the silicon substrate and SOI wafer is the vibrating film, as shown in Figure 7;
6）、采用LPCVD工艺在振动薄膜上沉积一层的二氧化硅层作为隔离层，如图8所示；6) Deposit a layer of silicon dioxide on the vibrating film as an isolation layer by LPCVD process, as shown in Figure 8;
7）在隔离层的上表面溅射金属，并用剥离的方法形成上电极和焊盘，如图9所示；7) Sputter metal on the upper surface of the isolation layer, and form the upper electrode and pad by stripping, as shown in Figure 9;
8）、围绕隔离层的四周边缘处及内部刻蚀出形成隔离槽的部分（形成阵元阵列），并用TMAH溶液腐蚀出隔离槽，隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上，如图10所示；8) Etch the part forming the isolation groove around the edge and inside of the isolation layer (form the element array), and use TMAH solution to etch the isolation groove. After the isolation groove penetrates the isolation layer and the vibrating film, the bottom of the groove is opened at on the oxide layer, as shown in Figure 10;
9）、通过金属引线连接一个阵元内的各上电极及焊盘；9) Connect the upper electrodes and pads in an array element through metal leads;
10）、在硅片的背面注入磷，与硅片形成良好的欧姆接触，并溅射金属形成一体化下电极（图中未画出）。10) Phosphorus is implanted on the back of the silicon wafer to form a good ohmic contact with the silicon wafer, and metal is sputtered to form an integrated lower electrode (not shown in the figure).
本发明利用CMUT探头微型化和阵列集成制造的优势，解决了微型压电换能器阵列制作成本高和提高成像效果存在技术瓶颈的问题。本设计出小真空腔体和薄振动硅膜的微电容结构，是制作CMUT器件和二维阵列的关键。微小振动单元采用六边形薄膜或圆形薄膜，排列更加紧密，在有限的面积下重复单元增多，提高了传感器灵敏度。The invention utilizes the advantages of CMUT probe miniaturization and array integrated manufacturing to solve the problems of high manufacturing cost of the micro piezoelectric transducer array and technical bottlenecks in improving the imaging effect. The design of the micro-capacitance structure with a small vacuum cavity and a thin vibrating silicon film is the key to making CMUT devices and two-dimensional arrays. The micro-vibration unit adopts hexagonal thin film or circular thin film, which is arranged more closely, and the number of repeated units increases in a limited area, which improves the sensitivity of the sensor.
能够通过CMUT二维阵列与其信号放大电路的互连方法和工艺，降低寄生电阻和寄生电容的互连工艺，实现了换能器阵列与电路的互连，实现换能器了芯片功能、提高了可靠性和实现了高信噪比微弱信号检测。Through the interconnection method and process of CMUT two-dimensional array and its signal amplification circuit, the interconnection process of reducing parasitic resistance and parasitic capacitance can be realized, and the interconnection between the transducer array and the circuit can be realized, and the chip function of the transducer can be improved, and the Reliability and weak signal detection with high signal-to-noise ratio achieved.
最后所应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照本发明实施例进行了详细说明，本领域的普通技术人员应当理解，对本发明的技术方案进行修改或者等同替换，都不脱离本发明的技术方案的精神和范围，其均应涵盖权利要求保护范围中。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than limit them. Although detailed descriptions have been made with reference to the embodiments of the present invention, those of ordinary skill in the art should understand that the technical solutions of the present invention are modified Or equivalent replacements do not deviate from the spirit and scope of the technical solutions of the present invention, and all of them should be included in the protection scope of the claims.
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| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | Application publication date:20170620 | |
| RJ01 | Rejection of invention patent application after publication |