技术领域technical field
本发明涉及MEMS传感器领域中的电容式微机械超声换能器，具体是一种用于测距和成像的电容式微机电超声换能器结构设计及其制备方法，具有收发能力均衡的特点。The invention relates to a capacitive micro-mechanical ultrasonic transducer in the field of MEMS sensors, in particular to a structural design and a preparation method of a capacitive micro-mechanical ultrasonic transducer for ranging and imaging, which has the characteristics of balanced sending and receiving capabilities.
背景技术Background technique
随着微机电系统（MEMS，Micro-electromechanical Systems）和微纳米技术的迅速发展，传感器的制造进入了一个全新的阶段。目前，超声传感器类型主要有压电式，压阻式和电容式三大类。其中，电容式微机械超声换能器（capacitive micro-machinedultrasonic transducer, CMUT）设计、加工灵活，受温度的影响较小，响应宽频带，制作材料与介质阻抗匹配好，易于阵列加工。还可将集成电路加工在传感器的背面，减少电路间的寄生电容影响和干扰信号的引入。待制造工艺流程确定之后，可大幅降低超声传感器的制造成本。With the rapid development of micro-electromechanical systems (MEMS, Micro-electromechanical Systems) and micro-nano technology, the manufacture of sensors has entered a new stage. At present, there are mainly three types of ultrasonic sensors: piezoelectric, piezoresistive and capacitive. Among them, the capacitive micro-machined ultrasonic transducer (CMUT) is flexible in design and processing, is less affected by temperature, responds to a wide frequency band, has a good matching between the production material and the dielectric impedance, and is easy to array processing. The integrated circuit can also be processed on the back of the sensor to reduce the influence of parasitic capacitance between circuits and the introduction of interference signals. After the manufacturing process flow is determined, the manufacturing cost of the ultrasonic sensor can be greatly reduced.
目前，微加工电容超声换能器在接收与发射能力方面只能使得其中一方具有较好的性能。当CMUT用于收发一体系统中时，在相同的条件下发射能力较弱。At present, micromachined capacitive ultrasonic transducers can only make one of them have better performance in terms of receiving and transmitting capabilities. When the CMUT is used in an integrated transceiver system, the transmission capability is weak under the same conditions.
发明内容Contents of the invention
本发明的目的是为了解决上述现有技术中存在的问题，而提出一种收发平衡的新型电容式微机电超声换能器结构及其制备方法。The purpose of the present invention is to solve the above-mentioned problems in the prior art, and to propose a novel capacitive micro-electromechanical ultrasonic transducer structure and a preparation method thereof with balanced transmission and reception.
本发明是采用如下技术方案实现的：The present invention is realized by adopting the following technical solutions:
一种收发性能平衡的微机电超声换能器面阵探头，包括硅衬底，所述硅衬底的上表面为氧化层，所述氧化层的上表面开设有若干空腔，所述氧化层的上表面键合振动薄膜，所述振动薄膜的上表面设隔离层，围绕隔离层的四周边缘处及其内部开设有下沉的隔离槽，所述隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上；所述隔离层的上表面上正对每个空腔的中心位置处设有上电极。A micro-electromechanical ultrasonic transducer area array probe with balanced transceiver performance, comprising a silicon substrate, the upper surface of the silicon substrate is an oxide layer, and several cavities are opened on the upper surface of the oxide layer, and the oxide layer The upper surface of the vibrating film is bonded with a vibrating film, the upper surface of the vibrating film is provided with an isolation layer, and a sunken isolation groove is opened around the periphery of the isolation layer and inside, and after the isolation groove penetrates through the isolation layer and the vibrating film, its The groove bottom is set on the oxide layer; the upper surface of the isolation layer is provided with an upper electrode at the center of each cavity.
所述氧化层上的若干空腔位于同一隔离区域内后形成一个阵元；一个阵元内，空腔分为A、B两种深度。Several cavities on the oxide layer are located in the same isolation area to form an array element; within an array element, the cavities are divided into two depths, A and B.
所述隔离层的上表面位于一个阵元内的边缘处位置设有一个焊盘，一个阵元内每排的两个相邻上电极之间以及每列的两个相邻上电极之间通过金属引线连接，所述焊盘与离其最近的一个上电极之间通过金属引线连接。The upper surface of the isolation layer is located at the edge of an array element, and a welding pad is provided, and a pad is passed between two adjacent upper electrodes in each row and between two adjacent upper electrodes in each column in an array element. The metal lead is connected, and the pad is connected to the nearest upper electrode through the metal lead.
或者，所述隔离层的上表面位于一个阵元内的边缘处位置设有两个焊盘，一个阵元内深度为A的空腔所对应的上电极通过金属引线与其中一个焊盘连接；一个阵元内深度为B的空腔所对应的上电极通过金属引线与其中另一个焊盘连接。Alternatively, the upper surface of the isolation layer is located at the edge of an array element and is provided with two pads, and the upper electrode corresponding to the cavity with a depth A in an array element is connected to one of the pads through a metal lead; An upper electrode corresponding to a cavity with a depth B in one array element is connected to the other pad through a metal lead.
所述硅衬底背面注入磷，并进行金属溅射形成下电极。Phosphorus is injected into the back of the silicon substrate, and metal sputtering is performed to form a lower electrode.
多个阵元成排、列对齐布置，形成CMUT面阵，该面阵排列为M*N，构成微机电超声换能器面阵探头。A plurality of array elements are aligned in rows and columns to form a CMUT area array, and the area array is arranged as M*N to form a micro-electromechanical ultrasonic transducer area array probe.
工作时，在探头的上下电极上施加直流电压，两极板之间将产生静电力，在静电力的作用下振动薄膜产生形变并被拉向衬底，随着薄膜应变增加薄膜内机械回复力也增加，最终与静电力平衡。此举有利于提高机电转换效率。若此时在上下电极上施加频率为X（X取值在响应范围内）的交变电压信号，交变电压信号的作用打破了薄膜在直流电压下所建立的平衡关系，这样会使薄膜不断振动，发出超声波，实现发射超声波的功能；若有超声波作用在薄膜上，同样会使薄膜失去平衡上下运动，导致上下极板间距发生变化，从而引起电容变化，外部电路可将电容变化引起的电流转换为可测的电压信号，实现了超声波的接收。When working, a DC voltage is applied to the upper and lower electrodes of the probe, and an electrostatic force will be generated between the two plates. Under the action of the electrostatic force, the vibrating film is deformed and pulled toward the substrate. As the strain of the film increases, the mechanical recovery force in the film also increases. , which eventually balances with the electrostatic force. This is conducive to improving the electromechanical conversion efficiency. If an alternating voltage signal with a frequency of X (the value of X is within the response range) is applied to the upper and lower electrodes at this time, the effect of the alternating voltage signal will break the balance relationship established by the film under the DC voltage, which will make the film continuously Vibrates, emits ultrasonic waves, and realizes the function of emitting ultrasonic waves; if an ultrasonic wave acts on the film, it will also cause the film to lose balance and move up and down, resulting in a change in the distance between the upper and lower plates, thereby causing a change in capacitance. The external circuit can convert the current caused by the change in capacitance It is converted into a measurable voltage signal to realize the reception of ultrasonic waves.
上述收发性能平衡的微机电超声换能器面阵探头的制备方法，包括如下步骤：The preparation method of the MEMS ultrasonic transducer area array probe with balanced transceiver performance includes the following steps:
（1）、选择硅片和SOI晶片，进行标准RCA清洗；(1) Select silicon wafers and SOI wafers for standard RCA cleaning;
（2）、对硅片进行氧化处理，使其上下表面都形成氧化层；(2) Oxidize the silicon wafer to form an oxide layer on the upper and lower surfaces;
（3）、在硅片上表面的氧化层上进行光刻，刻蚀出深度B的空腔；(3) Perform photolithography on the oxide layer on the upper surface of the silicon wafer to etch a cavity with a depth B;
（4）、再次在光刻后的硅片上表面的氧化层上进行光刻，对部分深度B的空腔进一步刻蚀，形成深度A的空腔；(4) Perform photolithography again on the oxide layer on the upper surface of the silicon wafer after photolithography, and further etch part of the cavity with depth B to form a cavity with depth A;
（5）、对硅片进行标准RCA清洗并进行激活，激活后使硅片上表面的氧化层与SOI晶片进行低温键合；(5) Carry out standard RCA cleaning and activation on the silicon wafer. After activation, the oxide layer on the upper surface of the silicon wafer is bonded to the SOI wafer at a low temperature;
（6）、键合后用TMAH溶液对SOI晶片的衬底硅进行腐蚀，清洗后再用BOE溶液腐蚀掉硅片下表面上的氧化层和SOI晶片上的氧化层，此时的硅片即为硅衬底、SOI晶片剩余的硅层即为振动薄膜；(6) After bonding, use TMAH solution to etch the substrate silicon of the SOI wafer, and after cleaning, use BOE solution to etch off the oxide layer on the lower surface of the silicon wafer and the oxide layer on the SOI wafer. At this time, the silicon wafer is The silicon substrate and the remaining silicon layer of the SOI wafer are the vibration film;
（7）、采用LPCVD工艺在振动薄膜上沉积一层二氧化硅层作为隔离层；(7) Deposit a silicon dioxide layer on the vibrating film as an isolation layer by LPCVD process;
（8）、围绕隔离层的四周边缘处及内部刻蚀出形成隔离槽的部分，并用TMAH溶液腐蚀出隔离槽，隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上；(8) Etch the part forming the isolation groove around the edge and inside of the isolation layer, and etch the isolation groove with TMAH solution. After the isolation groove penetrates the isolation layer and the vibrating film, the bottom of the groove is opened on the oxide layer;
（9）、在隔离层的上表面通过电子束蒸镀方法溅射金属，并用剥离的方法形成上电极和焊盘；(9) Sputter metal on the upper surface of the isolation layer by electron beam evaporation method, and form the upper electrode and pad by stripping method;
（10）、通过金属引线连接各上电极及焊盘；(10) Connect the upper electrodes and pads through metal leads;
（11）、在硅片的背面注入磷，与硅片形成良好的欧姆接触；(11) Phosphorus is implanted on the back of the silicon wafer to form a good ohmic contact with the silicon wafer;
（12）、在硅衬底进行金属溅射形成下电极。(12) Carry out metal sputtering on the silicon substrate to form the lower electrode.
本发明的创新之处是，在同一阵元中设计不同深度的空腔，以此来均衡其收发性能。通常情况下，在相同的结构下CMUT的发射能力弱与其接收能力。而A类单元的存在，使得在发射时可以施加更高的偏置电压，从而提高CMUT的发射性能；B类单元空腔深度较A类浅，使得上下极间间距减小，电容容量增大。在相同声强的超声波振动下，电容的变化率变大。The innovation of the present invention is that cavities with different depths are designed in the same array element, so as to balance the transmitting and receiving performance thereof. Typically, a CMUT's transmit capability is weaker than its receive capability under the same structure. The existence of the A-type unit makes it possible to apply a higher bias voltage during emission, thereby improving the emission performance of the CMUT; the cavity depth of the B-type unit is shallower than that of the A-type unit, which reduces the distance between the upper and lower electrodes and increases the capacitance. . Under ultrasonic vibration of the same sound intensity, the rate of change of capacitance becomes larger.
本发明设计合理，该收发平衡新型微机电超声换能器面阵探头，解决已有电容式微机电超声探头中发射与接收性能不平衡问题，实现换能器收发性能的一致。本发明超声探头结构新颖、体积小、频带宽、灵敏度高，噪声低，稳定性好，收发性能平衡。The design of the invention is reasonable, and the area array probe of the novel micro-electromechanical ultrasonic transducer with balanced transceiver solves the problem of unbalanced transmitting and receiving performance in the existing capacitive micro-electromechanical ultrasonic probe, and realizes the consistency of the transmitting and receiving performance of the transducer. The ultrasonic probe of the invention is novel in structure, small in size, wide in frequency, high in sensitivity, low in noise, good in stability and balanced in sending and receiving performance.
附图说明Description of drawings
图1-1表示本发明换能器面阵探头中一个阵元的结构示意图，其中，一个阵元中不同腔深对应的上电极用金属引线全部连接在一起。Fig. 1-1 shows a schematic structural diagram of an array element in the transducer area array probe of the present invention, wherein the upper electrodes corresponding to different cavity depths in an array element are all connected together with metal leads.
图1-2表示本发明换能器面阵探头中一个阵元的结构示意图，其中，一个阵元中不同腔深对应的上电极用金属引线分别连接在一起。Fig. 1-2 shows a schematic diagram of the structure of an array element in the transducer surface array probe of the present invention, wherein the upper electrodes corresponding to different cavity depths in an array element are respectively connected together with metal leads.
图2表示一个阵元的剖视图。Figure 2 shows a cross-sectional view of an array element.
图3表示本发明换能器制备方法中步骤2）的示意图。Fig. 3 shows a schematic diagram of step 2) in the transducer manufacturing method of the present invention.
图4表示本发明换能器制备方法中步骤3）的示意图。Fig. 4 shows a schematic diagram of step 3) in the transducer manufacturing method of the present invention.
图5表示本发明换能器制备方法中步骤4）的示意图。Fig. 5 shows a schematic diagram of step 4) in the transducer manufacturing method of the present invention.
图6表示本发明换能器制备方法中步骤5）的示意图。Fig. 6 shows a schematic diagram of step 5) in the transducer manufacturing method of the present invention.
图7表示本发明换能器制备方法中步骤6）的示意图。Fig. 7 shows a schematic diagram of step 6) in the transducer manufacturing method of the present invention.
图8表示本发明换能器制备方法中步骤7）的示意图。Fig. 8 shows a schematic diagram of step 7) in the transducer manufacturing method of the present invention.
图9表示本发明换能器制备方法中步骤8）的示意图。Fig. 9 shows a schematic diagram of step 8) in the transducer manufacturing method of the present invention.
图10表示本发明换能器制备方法中步骤9）的示意图。Fig. 10 shows a schematic diagram of step 9) in the transducer manufacturing method of the present invention.
图11表示本发明换能器制备方法中步骤12）的示意图。Fig. 11 shows a schematic diagram of step 12) in the transducer manufacturing method of the present invention.
图中：1-硅衬底，2-氧化层，3-空腔，4-振动薄膜，5-隔离层，6-上电极，7-焊盘，8-隔离槽，9-金属引线，10-下电极。In the figure: 1-silicon substrate, 2-oxide layer, 3-cavity, 4-vibrating film, 5-isolation layer, 6-upper electrode, 7-pad, 8-isolation groove, 9-metal lead, 10 - the lower electrode.
具体实施方式detailed description
下面结合附图对本发明的具体实施例进行详细说明。Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
一种收发性能平衡的微机电超声换能器面阵探头，由多个阵元成排、列对齐布置，形成CMUT面阵探头，该面阵可排列为M*N，其中M可取值16~512，N可取值16~512。A micro-electromechanical ultrasonic transducer area array probe with balanced transceiver performance. Multiple array elements are arranged in rows and columns to form a CMUT area array probe. The area array can be arranged as M*N, where M can take a value of 16 ~512, N can take the value of 16~512.
如图2所示，表示一个阵元（element）剖视图，包括硅衬底1，所述硅衬底1的上表面为氧化层2，所述氧化层2的上表面开设有若干圆柱形空腔3，圆柱形空腔3成排、列布置或对角布置，所述氧化层2的上表面键合振动薄膜4，所述振动薄膜4的上表面设隔离层5，围绕隔离层5的四周边缘处及其内部开设有下沉的隔离槽6（隔离槽用于隔开各阵元），所述隔离槽6贯穿隔离层5和振动薄膜4后，其槽底开设于氧化层2上；所述隔离层5的上表面上正对每个空腔3的中心位置处设有上电极7（形成图形化上电极）；所述氧化层2上的若干空腔3位于同一隔离区域内后形成一个阵元；一个阵元内，空腔3分为A、B两种不同深度。As shown in Figure 2, it shows a cross-sectional view of an element, including a silicon substrate 1, the upper surface of the silicon substrate 1 is an oxide layer 2, and several cylindrical cavities are opened on the upper surface of the oxide layer 2 3. Cylindrical cavities 3 are arranged in rows, columns or diagonally, the upper surface of the oxide layer 2 is bonded with a vibrating film 4, and the upper surface of the vibrating film 4 is provided with an isolation layer 5, surrounding the isolation layer 5 A sinking isolation groove 6 is opened on the edge and inside (the isolation groove is used to separate each element), and after the isolation groove 6 penetrates the isolation layer 5 and the vibrating film 4, the bottom of the groove is opened on the oxide layer 2; On the upper surface of the isolation layer 5, an upper electrode 7 (forming a patterned upper electrode) is provided at the center of each cavity 3; after several cavities 3 on the oxide layer 2 are located in the same isolation area, An array element is formed; within an array element, the cavity 3 is divided into two different depths, A and B.
一个阵元中上电极的连接方式有两种：（a）不同腔深的单元上电极用金属引线全部连接在一起；（b）不同腔深的单元上电极使用金属引线分别连接在一起。具体如下：There are two ways to connect the upper electrodes in an array element: (a) The upper electrodes of the cells with different cavity depths are all connected together with metal leads; (b) The upper electrodes of the cells with different cavity depths are connected together with metal leads. details as follows:
如图1-1所示，所述隔离层5的上表面位于一个阵元内的边缘处位置设有一个焊盘8，一个阵元内每排的两个相邻上电极7之间以及每列的两个相邻上电极7之间通过金属引线9连接，所述焊盘8与离其最近的一个上电极7之间通过金属引线9连接。As shown in Figure 1-1, the upper surface of the isolation layer 5 is located at the edge of an array element, and a pad 8 is provided, between two adjacent upper electrodes 7 in each row in an array element, and each Two adjacent upper electrodes 7 in a column are connected through metal leads 9 , and the pad 8 is connected with the nearest upper electrode 7 through metal leads 9 .
如图1-2所示，所述隔离层5的上表面位于一个阵元内的边缘处位置设有两个焊盘8，深度A和深度B的圆柱形空腔呈间隔列排列，一个阵元内深度为A的空腔3所对应的上电极7通过金属引线9与其中一个焊盘8连接；一个阵元内深度为B的空腔3所对应的上电极7通过金属引线9与其中另一个焊盘8连接。As shown in Figure 1-2, the upper surface of the isolation layer 5 is located at the edge of an array element. The upper electrode 7 corresponding to the cavity 3 with a depth of A in the cell is connected to one of the pads 8 through a metal lead 9; The other pad 8 is connected.
所述硅衬底1背面注入磷，并进行金属溅射形成一体化下电极10。Phosphorus is injected into the back of the silicon substrate 1 , and metal sputtering is performed to form an integrated lower electrode 10 .
本发明中，微小振动单元（cell）的结构设计，将其结构设计为圆柱形，排列更加紧密，在有限的面积下重复单元增多，提高了传感器灵敏度，并通过设计不同深度的空腔来改善换能器收发性能的一致性问题。In the present invention, the structural design of the micro-vibration unit (cell) is designed as a cylindrical structure, the arrangement is more compact, and the number of repeating units increases in a limited area, which improves the sensitivity of the sensor, and improves the sensor sensitivity by designing cavities with different depths. Consistency of transducer transceiver performance.
上述收发性能平衡的微机电超声换能器面阵探头的制备方法，包括如下步骤：The preparation method of the MEMS ultrasonic transducer area array probe with balanced transceiver performance includes the following steps:
（1）、选择硅片和SOI晶片，进行标准RCA清洗，以去除各种有机物、金尘埃和自然氧化层等；(1) Select silicon wafers and SOI wafers, and perform standard RCA cleaning to remove various organic matter, gold dust and natural oxide layers, etc.;
（2）、对硅片进行氧化处理，使其上下表面都形成氧化层，为后面刻蚀圆柱形空腔作准备；(2) Oxidize the silicon wafer to form an oxide layer on both the upper and lower surfaces, in preparation for the subsequent etching of the cylindrical cavity;
（3）、在硅片上表面的氧化层上进行光刻，刻蚀出深度B（浅）的空腔，光刻包括表面处理、旋转涂胶、前烘、对准和曝光、后烘、显影、刻蚀和去胶等常规步骤；(3) Perform photolithography on the oxide layer on the upper surface of the silicon wafer to etch a cavity with a depth B (shallow). Photolithography includes surface treatment, spin coating, pre-baking, alignment and exposure, post-baking, Routine steps such as developing, etching and stripping;
（4）、再次在光刻后的硅片上表面的氧化层上进行光刻，对部分深度B的空腔进一步刻蚀，形成深度A（深）的空腔；(4) Perform photolithography again on the oxide layer on the upper surface of the silicon wafer after photolithography, and further etch the cavity with a partial depth B to form a cavity with a depth A (deep);
（5）、对硅片进行标准RCA清洗并进行激活，激活后使硅片上表面的氧化层与SOI晶片进行低温键合；(5) Carry out standard RCA cleaning and activation on the silicon wafer. After activation, the oxide layer on the upper surface of the silicon wafer is bonded to the SOI wafer at a low temperature;
（6）、键合后用TMAH溶液对SOI晶片的衬底硅进行腐蚀，清洗后再用BOE溶液腐蚀掉硅片下表面上的氧化层和SOI晶片上的氧化层，此时的硅片即为硅衬底、SOI晶片剩余的硅层即为振动薄膜；(6) After bonding, use TMAH solution to etch the substrate silicon of the SOI wafer, and after cleaning, use BOE solution to etch off the oxide layer on the lower surface of the silicon wafer and the oxide layer on the SOI wafer. At this time, the silicon wafer is The silicon substrate and the remaining silicon layer of the SOI wafer are the vibration film;
（7）、采用LPCVD工艺在振动薄膜上沉积一层二氧化硅层作为隔离层，防止蒸镀金属形成上电极的过程中对振动薄膜的掺杂作用；(7) A layer of silicon dioxide is deposited on the vibrating film by LPCVD process as an isolation layer to prevent the doping of the vibrating film during the process of evaporating metal to form the upper electrode;
（8）、围绕隔离层的四周边缘处及内部刻蚀出形成隔离槽的部分，并用TMAH溶液腐蚀出隔离槽，隔离槽贯穿隔离层和振动薄膜后，其槽底开设于氧化层上；(8) Etch the part forming the isolation groove around the edge and inside of the isolation layer, and etch the isolation groove with TMAH solution. After the isolation groove penetrates the isolation layer and the vibrating film, the bottom of the groove is opened on the oxide layer;
（9）、在隔离层的上表面通过电子束蒸镀方法溅射金属，并用剥离的方法形成上电极和焊盘；(9) Sputter metal on the upper surface of the isolation layer by electron beam evaporation method, and form the upper electrode and pad by stripping method;
（10）、通过金属引线连接各上电极及焊盘；(10) Connect the upper electrodes and pads through metal leads;
（11）、在硅片的背面注入磷，与硅片形成良好的欧姆接触；(11) Phosphorus is implanted on the back of the silicon wafer to form a good ohmic contact with the silicon wafer;
（12）、在硅衬底进行金属溅射形成一体化下电极。(12) Metal sputtering is performed on the silicon substrate to form an integrated lower electrode.
最后所应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照本发明实施例进行了详细说明，本领域的普通技术人员应当理解，对本发明的技术方案进行修改或者等同替换，都不脱离本发明的技术方案的精神和范围，其均应涵盖权利要求保护范围中。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than limit them. Although detailed descriptions have been made with reference to the embodiments of the present invention, those of ordinary skill in the art should understand that the technical solutions of the present invention are modified Or equivalent replacements do not deviate from the spirit and scope of the technical solutions of the present invention, and all of them should be included in the protection scope of the claims.
| Application Number | Priority Date | Filing Date | Title |
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| CN201710009233.1ACN106862045A (en) | 2017-01-06 | 2017-01-06 | Receive and dispatch microelectromechanical ultrasound energy converter planar battle array probe of performance balance and preparation method thereof |
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| CN201710009233.1ACN106862045A (en) | 2017-01-06 | 2017-01-06 | Receive and dispatch microelectromechanical ultrasound energy converter planar battle array probe of performance balance and preparation method thereof |
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| CN201710009233.1APendingCN106862045A (en) | 2017-01-06 | 2017-01-06 | Receive and dispatch microelectromechanical ultrasound energy converter planar battle array probe of performance balance and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244232A (en)* | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN111884647A (en)* | 2020-08-13 | 2020-11-03 | 中国工程物理研究院电子工程研究所 | Piezoelectric micro-mechanical acoustic wave transducer array coupling isolation method |
| CN111889341A (en)* | 2020-07-30 | 2020-11-06 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN112517361A (en)* | 2020-11-30 | 2021-03-19 | 国网山西省电力公司朔州供电公司 | High-sensitivity multi-band combined type air-coupled ultrasonic transducer and preparation method thereof |
| CN114271854A (en)* | 2021-12-24 | 2022-04-05 | 中北大学 | Ultrasonic transducer array and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070059858A1 (en)* | 2005-09-14 | 2007-03-15 | Esaote, S.P.A. | Microfabricated capacitive ultrasonic transducer for high frequency applications |
| US20070164631A1 (en)* | 2004-06-07 | 2007-07-19 | Olympus Corporation | Capacitive micromachined ultrasonic transducer |
| CN104756521A (en)* | 2012-10-26 | 2015-07-01 | 富士胶片戴麦提克斯公司 | Micromachined ultrasonic transducer arrays with multiple harmonic modes |
| CN104907241A (en)* | 2015-06-17 | 2015-09-16 | 河南大学 | Broadband ultrasonic transducer composite mechanism satisfying multifrequency requirement |
| CN105486399A (en)* | 2015-12-21 | 2016-04-13 | 中北大学 | Micro-capacitance ultrasonic transducer for distance measurement and imaging, and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070164631A1 (en)* | 2004-06-07 | 2007-07-19 | Olympus Corporation | Capacitive micromachined ultrasonic transducer |
| US20070059858A1 (en)* | 2005-09-14 | 2007-03-15 | Esaote, S.P.A. | Microfabricated capacitive ultrasonic transducer for high frequency applications |
| CN104756521A (en)* | 2012-10-26 | 2015-07-01 | 富士胶片戴麦提克斯公司 | Micromachined ultrasonic transducer arrays with multiple harmonic modes |
| CN104907241A (en)* | 2015-06-17 | 2015-09-16 | 河南大学 | Broadband ultrasonic transducer composite mechanism satisfying multifrequency requirement |
| CN105486399A (en)* | 2015-12-21 | 2016-04-13 | 中北大学 | Micro-capacitance ultrasonic transducer for distance measurement and imaging, and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244232A (en)* | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN111889341A (en)* | 2020-07-30 | 2020-11-06 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN111889341B (en)* | 2020-07-30 | 2021-07-13 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN111884647A (en)* | 2020-08-13 | 2020-11-03 | 中国工程物理研究院电子工程研究所 | Piezoelectric micro-mechanical acoustic wave transducer array coupling isolation method |
| CN111884647B (en)* | 2020-08-13 | 2023-09-29 | 中国工程物理研究院电子工程研究所 | Coupling isolation method for piezoelectric micromechanical acoustic transducer array |
| CN112517361A (en)* | 2020-11-30 | 2021-03-19 | 国网山西省电力公司朔州供电公司 | High-sensitivity multi-band combined type air-coupled ultrasonic transducer and preparation method thereof |
| CN112517361B (en)* | 2020-11-30 | 2022-06-03 | 国网山西省电力公司朔州供电公司 | High-sensitivity multi-band combined type air-coupled ultrasonic transducer and preparation method thereof |
| CN114271854A (en)* | 2021-12-24 | 2022-04-05 | 中北大学 | Ultrasonic transducer array and preparation method thereof |
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