Background technology
Transparent display generally refers to that Transparence Display state can be formed so that beholder is it can be seen that the shadow shown in displayThe display of the scene of picture and display back.Transparent display has many possible applications, such as building or automobileThe displaying window of window and shopping plaza.
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display, also referred to as Organic ElectricityElectroluminescent display, is a kind of emerging panel display apparatus, because it has preparation process is simple, low cost, low in energy consumption, hairBrightness is high, operating temperature wide adaptation range, volume are frivolous, fast response time, and is easily achieved colored display and giant-screenShow, be easily achieved the advantages of matching with driver ic, be easily achieved Flexible Displays, thus with wide applicationProspect.
OLED according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) andActive array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. direct addressins and thin film transistor (TFT) (ThinFilm Transistor, TFT) class of matrix addressing two.Wherein, AMOLED has the pixel in array arrangement, belongs to actively aobviousShow type, luminous efficacy is high, be typically used as the large scale display device of fine definition.
The use of AMOLED fabrication techniques transparent displays is a kind of good selection.The principle of luminosity of AMOLED is：Use ITOTransparency electrode and metal electrode respectively as device anode and negative electrode, under certain voltage driving, electronics and hole respectively fromNegative electrode and anode are injected into electron transfer layer and hole transmission layer, and electronics and hole pass respectively through electron transfer layer and holeDefeated layer is moved in luminescent layer, and is met in luminescent layer, is formed exciton and is excited light emitting molecule and lighted.AMOLEDMain difficulty is that how to ensure that display screen has what light transmittance higher and viewing area yield ensured in preparation processProblem.
Fig. 1 is the pixel design diagram of existing AMOLED transparent displays, as shown in figure 1, the AMOLED is transparentDisplay includes multiple light emitting sub-pixels 111 with multiple clear subpixels 222；The multiple light emitting sub-pixel 111 includes multipleRed sub-pixel 101, multiple green sub-pixels 102 and multiple blue subpixels 103.
Fig. 2 is the schematic cross-sectional view of existing AMOLED transparent displays, as shown in Fig. 2 the AMOLED Transparence DisplaysDevice is including underlay substrate 100, the grid 110 on the underlay substrate 100, located at the grid 110 and underlay substrate 100On gate insulator 200, the active layer 210 on the gate insulator 200, located at the active layer 210 and gridEtching barrier layer 300 on insulating barrier 200, on the etching barrier layer 300 and correspond respectively to 210 liang of the active layerThe through hole 320 of first through hole 310 and second at end, on the etching barrier layer 300 and respectively via the first through hole 310The source electrode 410 that is in contact with the active layer 210 with the second through hole 320 and drain electrode 420, located at the source electrode 410, drain electrode 420,And the passivation layer 500 on etching barrier layer 300, the first flatness layer 600 on the passivation layer 500, located at described firstThe second flatness layer 700 on flatness layer 600, on first flatness layer 600 and passivation layer 500 and corresponding to the drain electrodeThe third through-hole 630 of 420 tops, on second flatness layer 700 and the fourth hole corresponding with third through-hole 630740th, the anodes 910 that are in contact with the drain electrode 420 in the fourth hole 740 and via the third through-hole 630, setIn the OLED luminescent layers 920 on the anode 910, the several supporters 790 on second flatness layer 700, located at instituteState the 5th on the second flatness layer 700, the first flatness layer 600, passivation layer 500, etching barrier layer 300 and gate insulator 200Through hole 755 and on several supporters 790, the second flatness layer 700, OLED luminescent layers 920 and underlay substrate 100Negative electrode 930；
The fifth hole 755 by being correspondingly arranged up and down and multiple vias for being mutually communicated are constituted, the multiple via bagInclude the first via 210 on the gate insulator 200, the second via 320 on the etching barrier layer 300,The 3rd via 530 on the passivation layer 500, the 4th via 640, Yi Jiwei on first flatness layer 600The 5th via 750 on second flatness layer 700；
Due to being provided with OLED luminescent layers 920 in the fourth hole 740, so as to constitute the AMOLED transparent displaysLight emitting sub-pixel 111；OLED luminescent layers 92 are not provided with the fifth hole 755, so as to constitute the AMOLED Transparence DisplaysThe clear subpixel 222 of device.
Specifically, the processing procedure of the anode 930 is generally arranged in after the processing procedure of first flatness layer 600 and describedBefore the processing procedure of two flatness layers 700, in other words, before the material of the anode 930 is deposited, the gate insulator 200,Etching barrier layer 300, passivation layer 500, the first flatness layer 600 and respectively be located at the gate insulator 200, etch stopperThe first via 210, the second via 320, the 3rd via 530 and the 4th mistake on layer 300, passivation layer 500, the first flatness layer 600Hole 640 has completed, due to first via 210, the second via 320, the 3rd via 530 and the 4th via 640Hole wall is all very precipitous, therefore when the lithographic process of anode 910 is carried out, first via 210, the second via 320, the 3rd mistakePhotoresistance residual is easily formed on the hole wall of the via 640 of hole 530 and the 4th so that be deposited on first via 210, the second via320th, the anode material on the hole wall of the 3rd via 530 and the 4th via 640 can not be now completely etched away, described so as to residue inIn first via 210, the second via 320, the 3rd via 530 and the 4th via 640, obtained AMOLED is ultimately caused transparent aobviousAnode material is remained in the fifth hole 755 for showing device, the anode material remained in the fifth hole 755 can bring all windyDanger, such as the problems such as the short circuit between induction circuit, static discharge (ESD) and uneven cathode impedance, then causes to be located at the sub- picture that lightsThe driving of the OLED luminescent layers 92 in plain 111 regions is affected, and ultimately results in display abnormal.
In due to the gate insulator 200, etching barrier layer 300, the flatness layer 600 of passivation layer 500 and first, describedThe thickness of one flatness layer 600 is maximum, therefore, the surface area of the hole wall of the 4th via 640 on first flatness layer 600Maximum, so that the residual quantity of the anode material on the hole wall of the 4th via 640 is also maximum, that is to say, that if reducedThe residual quantity of the anode material on the hole wall of the 4th via 640, then, anode material in the fifth hole 755Residual quantity will be reduced greatly；Therefore, the present invention is carried out based on above thinking to the display performance of AMOLED transparent displaysImprove.
The content of the invention
It is an object of the invention to provide a kind of preparation method of AMOLED transparent displays, composition can be reduced describedThe residual quantity of the anode material in the fifth hole of the clear subpixel of AMOLED transparent displays, so that it is transparent to lift AMOLEDThe display performance of display.
The present invention also aims to provide a kind of AMOLED transparent displays, the AMOLED transparent displays are constitutedThe residual quantity of the anode material in the fifth hole of clear subpixel is low, with preferable display performance.
To achieve the above object, the present invention provides a kind of preparation method of AMOLED transparent displays, comprises the following steps：
Step 1, provide a underlay substrate, sequentially formed from top to bottom on the underlay substrate grid, gate insulator,Active layer, etching barrier layer, source electrode and drain electrode, passivation layer and the first flatness layer；
In first flatness layer, passivation layer, etching barrier layer and gate insulator, the thickness of first flatness layer is mostGreatly；
The etching barrier layer is provided with and corresponds respectively to the first through hole at the active layer two ends and the second through hole, describedSource electrode and drain electrode are in contact via the first through hole and the second through hole with the active layer respectively；
The passivation layer is provided with corresponding to the first via above the drain electrode, and the gate insulator is provided with secondVia, the etching barrier layer is provided with the 3rd via, and the passivation layer is provided with the 4th via, second via, the 3rdVia, the 4th via are correspondingly arranged and are mutually communicated up and down；
Step 2, the first light shield of offer, first light shield are provided with several first light-transparent patterns with several second printing opacity figuresCase；First light-transparent pattern includes continuous continual first transparent area；Second light-transparent pattern includes continuous uninterruptedThe second transparent area and be arranged in order and be connected with second transparent area respectively along the periphery of second transparent areaSeveral miniature transparent areas；
First flatness layer is exposed using first light shield, is developed, formed on first flatness layerCorresponding to the 5th via and the 6th via corresponding to second light-transparent pattern of first light-transparent pattern；
5th via is correspondingly arranged and is mutually communicated up and down with first via, collectively forms third through-hole；
6th via is correspondingly arranged and is mutually communicated up and down with the 4th via, the 3rd via, the second via；
Spaced several grooves are formed with the hole wall of the 6th via and between several groovesSeveral lug bosses, or the hole wall of the 6th via is from the position away from the 6th via near the 6th mistakeThe slope being highly gradually reduced on the direction of the position in hole；
Step 3, formed on first flatness layer via the third through-hole and the anode that is in contact of draining；
Step 4, on first flatness layer the second flatness layer is formed, formed on second flatness layer and correspond to instituteState the fourth hole above anode and the 7th via for being correspondingly arranged up and down and being mutually communicated with the 6th via；It is described fromUnder collectively form the 5th to upper the second via for connecting successively, the 3rd via, the 4th via, the 6th via and the 7th viaThrough hole；
Several supporters are formed on second flatness layer；
Step 5, the formation OLED luminescent layers on the anode；
Negative electrode is formed on second flatness layer, several supporters, OLED luminescent layers and underlay substrate.
In the step 2, several miniature transparent areas are spaced several rectangle transparent areas, and the rectangle is saturatingThe length of side in light area is 3 μm to 5 μm；
Be formed with the hole wall of the 6th via several grooves for corresponding respectively to several rectangle transparent areas andSeveral lug bosses between several grooves；Depression in the surface depth of the bottom land of the groove relative to the lug bossSpend is 3 μm to 5 μm.
In the step 2, several miniature transparent areas are spaced several rectangle transparent areas, and the rectangle is saturatingThe length of side in light area is 1 μm to 3 μm；
The hole wall of the 6th via is from the position away from the 6th via near the position of the 6th viaDirection on the slope that is highly gradually reduced；The gradient on the slope is 45 °~70 °, i.e., the hole wall of described 6th via and instituteIt is 45 °~70 ° to state the angle between passivation layer；The width on the slope is 1 μm to 3 μm.
In the step 2, several miniature transparent areas are to be sequentially connected or spaced several triangle printing opacitiesArea, and the length of side of the triangle transparent area is 1 μm to 3 μm；
The hole wall of the 6th via is from the position away from the 6th via near the position of the 6th viaDirection on the slope that is highly gradually reduced；The gradient on the slope is 45 °~70 °, i.e., the hole wall of described 6th via and instituteIt is 45 °~70 ° to state the angle between passivation layer；The width on the slope is 1 μm to 3 μm.
The thickness of the passivation layer, etching barrier layer and gate insulator is respectivelyDescribed firstThe thickness of flatness layer is 2 μm to 3 μm.
The present invention also provides a kind of AMOLED transparent displays, including underlay substrate, the grid on the underlay substratePole, the gate insulator on the grid and underlay substrate, the active layer on the gate insulator, located at describedEtching barrier layer on active layer and gate insulator, on the etching barrier layer and correspond respectively to the active layer twoThe first through hole at end and the second through hole, on the etching barrier layer and respectively via the first through hole and the second through hole withSource electrode that the active layer is in contact and drain electrode, the passivation layer on the source electrode, drain electrode and etching barrier layer, located at instituteState the first flatness layer on passivation layer, on first flatness layer and passivation layer and corresponding to the 3rd above the drain electrodeThrough hole, on first flatness layer and via the third through-hole with it is described drain be in contact anode, located at described theThe second flatness layer on one flatness layer, on second flatness layer and corresponding to the fourth hole above the anode, setIn the OLED luminescent layers on the anode, the several supporters on second flatness layer, located at second flatness layer,Fifth hole on first flatness layer, passivation layer, etching barrier layer and gate insulator and located at several supporters,Negative electrode on second flatness layer, OLED luminescent layers and underlay substrate；
The fifth hole includes the multiple vias for being correspondingly arranged and being mutually communicated up and down, and the multiple via includes being located atThe second via on the gate insulator, the 3rd via on the etching barrier layer, on the passivation layer4th via, the 6th via on first flatness layer and the 7th via on second flatness layer；
In first flatness layer, passivation layer, etching barrier layer and gate insulator, the thickness of first flatness layer is mostGreatly；
The hole wall of the 6th via is provided with spaced several grooves and between several groovesSeveral lug bosses；Or, the hole wall of the 6th via is from the position away from the 6th via near the 6th mistakeThe slope being highly gradually reduced on the direction of the position in hole.
The third through-hole includes on the passivation layer and corresponding to the first via above the drain electrode and setsIn the 5th via for being correspondingly arranged up and down and being mutually communicated with first via on first flatness layer；
The thickness of the passivation layer, etching barrier layer and gate insulator is respectivelyDescribed firstThe thickness of flatness layer is 2 μm to 3 μm.
The bottom land of the groove is 3 μm to 5 μm relative to the depression in the surface depth of the lug boss.
The gradient on the slope is 45 °~70 °, i.e., the angle between the hole wall and the passivation layer of described 6th via is45 °~70 °；The width on the slope is 1 μm to 3 μm.
The anode is reflecting electrode, and the negative electrode is semitransparent electrode；The anode includes two transparent conductive metal oxygenCompound layer and the metal level being located between two transparent conductive metal oxide skin(coating)s；The material of the negative electrode is metal.
Beneficial effects of the present invention：The preparation method of a kind of AMOLED transparent displays that the present invention is provided, by usingOne special light shield prepares the 6th via on the first flatness layer so that the hole wall of the 6th via has a plurality of groove or is inRamped shaped, so as to reduce the residual quantity of the anode material on the hole wall of the 6th via, and then reduces the composition AMOLEDThe residual quantity of the anode material in the fifth hole of the clear subpixel of transparent display, lifts the aobvious of AMOLED transparent displaysShow performance.A kind of AMOLED transparent displays that the present invention is provided, set by by the hole wall of the 6th via on the first flatness layerIt is set to a plurality of groove or in ramped shaped, and then reduces the of the clear subpixel for constituting the AMOLED transparent displaysThe residual quantity of the anode material in five through holes, so as to reduce the residual quantity of the anode material on the hole wall of the 6th via, hasThere is preferable display performance.
In order to be able to be further understood that feature of the invention and technology contents, refer to below in connection with of the invention detailedIllustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, not for being any limitation as to the present invention.
Specific embodiment
Further to illustrate technological means and its effect that the present invention is taken, it is preferable to carry out below in conjunction with of the inventionExample and its accompanying drawing are described in detail.
Fig. 3 is referred to, present invention firstly provides a kind of preparation method of AMOLED transparent displays, is comprised the following steps：
Step 1, as shown in Figure 4, there is provided a underlay substrate 10, sequentially form grid from top to bottom on the underlay substrate 10Pole 11, gate insulator 20, active layer 21, etching barrier layer 30, source electrode 41 and drain electrode 42, passivation layer 50 and first are flatLayer 60；
In first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulator 20, first flatness layer60 thickness is maximum；
The etching barrier layer 30 be provided with correspond respectively to the two ends of the active layer 21 first through hole 31 and second lead toHole 32, the source electrode 41 and drain electrode 42 connect via the through hole 32 of the first through hole 31 and second with the active layer 21 respectivelyTouch；
The passivation layer 50 is provided with the first via 51 corresponding to the top of drain electrode 42, on the gate insulator 20The second via 22 is provided with, the etching barrier layer 30 is provided with the 3rd via 33, and the passivation layer 50 is provided with the 4th via 54,Second via 22, the 3rd via 33, the 4th via are correspondingly arranged and are mutually communicated about 54.
Specifically, the thickness of the passivation layer 50, etching barrier layer 30 and gate insulator 20 is respectively
Specifically, the thickness of first flatness layer 60 is 2 μm to 3 μm, preferably 2.5 μm.
Step 2, as shown in Fig. 5 A or 5B, there is provided the first light shield 70, it is saturating that first light shield 70 is provided with several firstLight pattern 71 and several second light-transparent patterns 72；First light-transparent pattern 71 includes continuous continual first transparent area 711；Second light-transparent pattern 72 includes continuous continual second transparent area 721 and the periphery along second transparent area 721The several miniature transparent area 722 for being arranged in order and being connected with second transparent area 721 respectively；
As shown in Fig. 5 C or 5E, it is exposed using first light shield, 70 pairs of first flatness layers 60, is developed,Formed corresponding to the 5th via 65 of first light-transparent pattern 71 and corresponding to described second on first flatness layer 606th via 66 of light-transparent pattern 72；
5th via 65 is correspondingly arranged and is mutually communicated with first via about 51, collectively forms third through-hole63；
6th via 66 is correspondingly arranged and phase with the 4th via 54, the 3rd via 33, the second via about 22Mutual insertion；
The hole wall of the 6th via 66 is provided with spaced several grooves 661 and positioned at several groovesSeveral lug bosses 662 between 661, or the 6th via 66 hole wall be from the position away from the 6th via 66 toThe slope being highly gradually reduced on the direction of the position of the 6th via 66.
Specifically, Fig. 5 A are the structural representation of the first embodiment of first light shield 70, and as shown in Figure 5A, the numberIndividual miniature transparent area 722 is to be arranged in order along the periphery of second transparent area 721 and spaced several rectangle transparent areas723。
Specifically, Fig. 5 B are the structural representation of the second embodiment of first light shield 70, and as shown in Figure 5 B, the numberIndividual miniature transparent area 722 is the several triangle transparent areas 725 being arranged in order along the periphery of second transparent area 721, describedSeveral triangle transparent areas 725 are sequentially connected or interval setting.
In the step 2, because second light-transparent pattern 72 has special graphic structure, therefore, using describedFirst first flatness layer 60 of light shield 70 pairs is exposed, develop after, what is formed on first flatness layer 60 corresponds toThe hole wall of the 6th via 66 of second light-transparent pattern 72 can have the special shape or construction distinguished with common through hole：
Specifically, as shown in Figure 5A, several miniature transparent areas 722 are spaced several rectangle transparent areas 723,And the length of side of the rectangle transparent area 723 is when being 3 μm to 5 μm, as shown in Fig. 5 C and Fig. 5 D, on the hole wall of the 6th via 66It is formed with several grooves 661 for corresponding respectively to several rectangle transparent areas 723 and between several grooves 661Several lug bosses 662.
Specifically, the bottom land of the groove 661 is 3 μm to 5 μ relative to the depression in the surface depth of the lug boss 662m。
Specifically, as shown in Figure 5A, several miniature transparent areas 722 are spaced several rectangle transparent areas 723,And the length of side of the rectangle transparent area 723 be 1 μm to 3 μm (preferably 2 μm to 3 μm) when, on first light shield 70 be located at instituteThe region for stating several miniature transparent areas 722 forms diffraction grating, and the ultraviolet light that exposed can be disperseed, and because the region exposesThe ultraviolet light quantity that light time passes through is less in itself, therefore the overall exposing amount of the subregion is relatively low, is using the first light shield 70 pairsFirst flatness layer 60 is exposed, develop after, correspond to as shown in fig. 5e, on first flatness layer 60 described several micro-The region of type transparent area 722 is formed from the position away from the 6th via 66 to the side near the position of the 6th via 66The slope being highly gradually reduced upwards, the slope is the hole wall of the 6th via 66.
Specifically, the gradient on the slope is 45 °~70 °, i.e., the hole wall and the passivation layer 50 of described 6th via 66Between angle be 45 °~70 °；The width on the slope is 1 μm to 3 μm, preferably 2 μm to 3 μm.
Specifically, as shown in Figure 5 B, several miniature transparent areas 722 are to be sequentially connected or spaced several threeAngular transparent area 725, and the length of side of the triangle transparent area 725 is when being 1 μm to 3 μm (preferably 2 μm to 3 μm), described theDiffraction grating is formed positioned at the region of several miniature transparent areas 722 on one light shield 70, the ultraviolet light for exposing can be dividedDissipate, and the ultraviolet light quantity passed through during due to the regional exposure is less in itself, therefore the overall exposing amount of the subregion is relatively low,After being exposed, develop using 70 pairs of first flatness layers 60 of the first light shield, as shown in fig. 5e, on first flatness layer 60Region corresponding to several miniature transparent areas 722 is formed from the position away from the 6th via 66 near the described 6thThe slope being highly gradually reduced on the direction of the position of via 66, the slope is the hole wall of the 6th via 66.
Specifically, the gradient on the slope is 45 °~70 °, i.e., the hole wall and the passivation layer 50 of described 6th via 66Between angle be 45 °~70 °；The width on the slope is 1 μm to 3 μm, preferably 2 μm to 3 μm.
Step 3, as shown in Fig. 6 B or 6D, first flatness layer 60 via the third through-hole 63 and it is described drain electrode 42The anode 91 being in contact.
Specifically, as shown in figure 6 a and 6b, or as shown in Fig. 6 C and 6D, the step 3 includes：It is flat described secondAnode material layer 80 is formed on layer 70, photoresist layer 81 is coated with the anode material layer 80, using 82 pairs of light of the second light shieldResistance layer 81 is exposed, develops, and the anode material layer 80 is etched, and after peeling off remaining photoresistance, is obtained positioned at describedThe anode 91 being in contact with the drain electrode 42 in fourth hole 74 and via the third through-hole 63.
Specifically, forming the anode material layer 80 using sputtering method.
Specifically, the anode 91 is reflecting electrode, the anode 91 includes two transparent conductive metal oxide skin(coating)s with folderMetal level between two transparent conductive metal oxide skin(coating)s, it is preferred that the material of the transparent conductive metal oxide skin(coating)It is tin indium oxide (ITO) that the material of the reflective metal layer is silver.
Specifically, as shown in Figure 6A, when the hole wall of the 6th via 66 be provided with spaced several grooves 661 withAnd during several lug bosses 662 between several grooves 661, it is described in deposition anode material in the step 3It is not easy sputtering in several grooves 661 and enters anode material, so as to causes the anode material can not be in the hole of the 6th via 66Successive sedimentation on wall, and then the gross area of the anode material deposited on the hole wall of the 6th via 66 is reduced, so as to dropResidual quantity of the anode material on the hole wall of the 6th via 66 after low etch process.
Specifically, as shown in Figure 6 C, when the hole wall of the 6th via 66 is from the position away from the 6th via 66During to the slope being highly gradually reduced on the direction of the position of the 6th via 66, in the step 3, in deposition anodeMaterial and after carrying out lithographic process, because the gradient of the hole wall of the 6th via 66 is larger, therefore coats the 6th mistakePhotoresist layer 81 on anode material on the hole wall in hole 66 can be exposed completely, so that being deposited on the 6th viaAnode material on 66 hole wall is now completely etched away, it is to avoid anode material is residual on the hole wall of the 6th via 66Stay.
Step 4, as shown in Fig. 7 A or 7B, the second flatness layer 70 is formed on first flatness layer 60, described secondFormed on flatness layer 70 corresponding to the top of the anode 91 fourth hole 74 and corresponding about 66 with the 6th via setThe 7th via 77 put and be mutually communicated；
Second via 22 for connecting successively from top to bottom, the 3rd via 33, the 4th via 54, the 6th via 66,And the 7th via 77 collectively form fifth hole 75；
Several supporters 79 are formed on second flatness layer 70.
Specifically, the fourth hole 74 is used to be formed the light emitting sub-pixel of AMOLED transparent displays, the described 5th leads toHole 75 is used to be formed the clear subpixel of AMOLED transparent displays.
Specifically, several supporters 79 are organic photoresist, the purposes of several supporters 79 is rearEvaporation mask plate is supported in the evaporation processing procedure of continuous OLED luminescent layers 92 and negative electrode 93.
Specifically, the thickness of second flatness layer 70 is 2 μm to 3 μm, preferably 2.5 μm.
Specifically, the thickness of above support 79 is 2 μm to 3 μm, preferably 2.5 μm.
Step 5, as shown in Fig. 8 A or Fig. 8 B, OLED luminescent layers 92 are formed on the anode 91；
Negative electrode is formed on second flatness layer 70, several supporters 79, OLED luminescent layers 92 and underlay substrate 1093。
Specifically, the negative electrode 93 is semitransparent electrode, the material of the negative electrode 93 is metal, preferably magnesium silver alloy.
Specifically, in the step 5, the OLED luminescent layers 92 are prepared with negative electrode 93 using evaporation processing procedure.
Specifically, the negative electrode 93 coats the fifth hole 75.
The preparation method of above-mentioned AMOLED transparent displays, by being prepared using a special light shield on the first flatness layer 60The 6th via 66 so that the hole wall of the 6th via 66 has a plurality of groove 661 or in ramped shaped, so as to reduce describedThe residual quantity of the anode material on the hole wall of six vias 66, and then reduce the transparent sub- picture for constituting the AMOLED transparent displaysThe residual quantity of the anode material in the fifth hole 75 of element, lifts the display performance of AMOLED transparent displays.
Fig. 8 A and Fig. 8 B are referred to, while Fig. 5 D are referred to, based on the preparation method of above-mentioned AMOLED transparent displays, this hairIt is bright that a kind of AMOLED transparent displays are also provided, including underlay substrate 10, the grid 11 on the underlay substrate 10, be located atGate insulator 20 on the grid 11 and underlay substrate 10, the active layer 21 on the gate insulator 20, it is located atEtching barrier layer 30 on the active layer 21 and gate insulator 20, on the etching barrier layer 30 and correspond respectively toThe first through hole 31 at the two ends of the active layer 21 and the second through hole 32, on the etching barrier layer 30 and respectively via describedSource electrode 41 that the through hole 32 of first through hole 31 and second is in contact with the active layer 21 and drain electrode 42, located at the source electrode 41, leakagePassivation layer 50 on pole 42 and etching barrier layer 30, the first flatness layer 60 on the passivation layer 50, located at described firstOn flatness layer 60 and passivation layer 50 and corresponding to the third through-hole 63 above the drain electrode 42, on first flatness layer 60And via the third through-hole 63 and the anodes 91 that the drain electrode 42 is in contact, on first flatness layer 60 second flatSmooth layer 70, the fourth hole 74 on second flatness layer 70 and corresponding to the top of the anode 91, located at the anodeOLED luminescent layers 92 on 91, the several supporters 79 on second flatness layer 70, located at second flatness layer 70,Fifth hole 75 on first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulator 20 and located at the numberNegative electrode 93 on individual supporter 79, the second flatness layer 70, OLED luminescent layers 92 and underlay substrate 10；
The fifth hole 75 includes the multiple vias for being correspondingly arranged and being mutually communicated up and down, and the multiple via includes positionIn the second via 22 on the gate insulator 20, the 3rd via 33 on the etching barrier layer 30, positioned at describedThe 4th via 54 on passivation layer 50, the 6th via 66 on first flatness layer 60 and flat positioned at described secondThe 7th via 77 on smooth layer 70；
In first flatness layer 60, passivation layer 50, etching barrier layer 30 and gate insulator 20, first flatness layer60 thickness is maximum；
As shown in Fig. 8 A and Fig. 5 D, the hole wall of the 6th via 66 be provided with spaced several grooves 661 andSeveral lug bosses 662 between several grooves 661；Or, as shown in Figure 8 B, the hole wall of the 6th via 66 isFrom the position away from the 6th via 66 near the 6th via 66 position direction on be highly gradually reduced it is obliqueSlope.
Specifically, the third through-hole 63 is included on the passivation layer 50 and corresponding to the of the top of drain electrode 42One via 51 and be correspondingly arranged and be mutually communicated about 51 with first via on first flatness layer 60Five vias 65.
Specifically, due to being provided with OLED luminescent layers 92 in the fourth hole 74, so that it is transparent aobvious to constitute the AMOLEDShow the light emitting sub-pixel of device；OLED luminescent layers 92 are not provided with the fifth hole 75, so that it is transparent aobvious to constitute the AMOLEDShow the clear subpixel of device.
Specifically, the thickness of the passivation layer 50, etching barrier layer 30 and gate insulator 20 is respectively
Specifically, the thickness of first flatness layer 60 is 2 μm to 3 μm, preferably 2.5 μm.
Specifically, the thickness of second flatness layer 70 is 2 μm to 3 μm, preferably 2.5 μm.
Specifically, the thickness of above support 79 is 2 μm to 3 μm, preferably 2.5 μm.
Specifically, being provided with spaced several grooves 661 and positioned at described when the hole wall of the 6th via 66During several lug bosses 662 between several grooves 661, the surface of the bottom land relative to the lug boss 662 of the groove 661Cup depth is 3 μm to 5 μm.
Specifically, when the hole wall of the 6th via 66 is from the position away from the 6th via 66 near described theDuring the slope being highly gradually reduced on the direction of the position of six vias 66, the gradient on the slope is 45 °~70 °, i.e., described theAngle between the hole wall and the passivation layer 50 of six vias 66 is 45 °~70 °；The width on the slope is 1 μm to 3 μm, excellentElect 2 μm to 3 μm as.Slope is set to by by the hole wall of the 6th via 66, the present invention can also improve the AMOLEDThe aperture opening ratio of the clear subpixel of transparent display.
Specifically, the anode 91 is reflecting electrode, the negative electrode 93 is semitransparent electrode, so that the AMOLEDTransparent display forms a top-illuminating OLED display.
Specifically, the anode 91 includes that two transparent conductive metal oxide skin(coating)s are aoxidized with two transparent conductive metals are located inMetal level between nitride layer, it is preferred that the material of the transparent conductive metal oxide skin(coating) is tin indium oxide (ITO), the goldIt is silver to belong to the material of layer.
Specifically, the material of the negative electrode 93 is metal, preferably magnesium silver alloy.
Specifically, the negative electrode 93 coats the fifth hole 75.
Above-mentioned AMOLED transparent displays, have by the way that the hole wall of the 6th via 66 on the first flatness layer 60 is set toA plurality of groove 661 or in ramped shaped, so that the residual quantity of the anode material on the hole wall of the 6th via 66 is reduced, and thenThe residual quantity of the anode material in the fifth hole 75 of the clear subpixel for constituting the AMOLED transparent displays is reduced, is hadPreferable display performance.
In sum, the present invention provides a kind of AMOLED transparent displays and preparation method thereof.AMOLED of the invention is saturatingThe preparation method of bright display, by the 6th mistake that the clear subpixel on the first flatness layer is prepared using a special light shieldHole so that the hole wall of the 6th via has a plurality of groove or in ramped shaped, so as to reduce on the hole wall of the 6th viaAnode material residual quantity, and then reduce in the fifth hole of the clear subpixel for constituting the AMOLED transparent displaysThe residual quantity of anode material, lifts the display performance of AMOLED transparent displays.AMOLED transparent displays of the invention, pass throughThe hole wall of the 6th via on the first flatness layer is set to a plurality of groove or in ramped shaped, so as to reduce the described 6thThe residual quantity of the anode material on the hole wall of via, and then reduce the clear subpixel for constituting the AMOLED transparent displaysThe residual quantity of the anode material in fifth hole, with preferable display performance.
The above, for the person of ordinary skill of the art, can be with technology according to the present invention scheme and technologyOther various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claims in the present inventionProtection domain.