技术领域technical field
本发明涉及一种采用Ag-Cu-Ti钎料钎焊AlON陶瓷和氮化硼氮化硅复合陶瓷的方法。The invention relates to a method for brazing AlON ceramics and boron nitride silicon nitride composite ceramics by using Ag-Cu-Ti solder.
背景技术Background technique
当今，科技的进步越来越依赖于材料科学的发展。在众多材料中，金属材料以其在强度、延展性、导电性和导热性等方面的优异性能获得了广泛的应用，但其耐高温、耐腐蚀和耐磨损等性能已不能满足日趋提高的需求。陶瓷材料除了具有耐高温、高强度、高硬度、高耐磨性等优点，在电、磁、热、光、声等方面也具有很多特殊的功能，在某些方面远远超过金属材料和高分子材料。因此，先进陶瓷材料有着广阔的应用前景，不仅可以促进相关行业的技术进步，改善人民生活质量，创造良好的经济效益和社会效益，而且对增强国防力量、保证国家安全也极其重要。Nowadays, the progress of science and technology depends more and more on the development of material science. Among many materials, metal materials have been widely used due to their excellent properties in terms of strength, ductility, electrical conductivity and thermal conductivity, but their properties such as high temperature resistance, corrosion resistance and wear resistance can no longer meet the increasing demands. need. In addition to the advantages of high temperature resistance, high strength, high hardness, and high wear resistance, ceramic materials also have many special functions in electricity, magnetism, heat, light, sound, etc. molecular material. Therefore, advanced ceramic materials have broad application prospects. They can not only promote technological progress in related industries, improve people's quality of life, create good economic and social benefits, but also play an important role in strengthening national defense and ensuring national security.
六方氮化硼(h-BN)在室温条件下介电性能优异，介电常数为4.2，介电损耗为0.001，在Si3N4陶瓷中添加一定量的h-BN能够显著改善其介电性能，制备的BN-Si3N4多孔复合透波陶瓷具有优异的力学性能和介电性能，可用于制造导弹天线罩。尖晶石型氮氧化铝(γ-AlON)简称AlON，是AlN-Al2O3二元体系的一个重要的单相、稳定的固溶体。AlON陶瓷熔点2158℃，不仅具有优异的力学、热学和化学性能，而且其在0.2～5.0μm的波长(包括紫外区、可见光区和红外区)段具有良好的透光性，理论透过率高达85％。此外，它还具有良好的光学和机械各向同性。因此，AlON透明陶瓷是红外制导导弹天线罩红外窗口的理想材料。所以，实现AlON陶瓷和BN-Si3N4多孔陶瓷的可靠连接具有重要的实用价值。Hexagonal boron nitride (h-BN) has excellent dielectric properties at room temperature, with a dielectric constant of 4.2 and a dielectric loss of 0.001. Adding a certain amount of h-BN to Si3 N4 ceramics can significantly improve its dielectric properties. Performance, the prepared BN-Si3 N4 porous composite wave-transparent ceramic has excellent mechanical properties and dielectric properties, and can be used to manufacture missile radomes. Spinel-type aluminum oxynitride (γ-AlON), referred to as AlON, is an important single-phase and stable solid solution of the AlN-Al2 O3 binary system. The melting point of AlON ceramic is 2158°C. It not only has excellent mechanical, thermal and chemical properties, but also has good light transmittance in the wavelength range of 0.2-5.0 μm (including ultraviolet region, visible region and infrared region), and its theoretical transmittance is as high as 85%. In addition, it has good optical and mechanical isotropy. Therefore, AlON transparent ceramic is an ideal material for the infrared window of the infrared guided missile radome. Therefore, it is of great practical value to achieve a reliable connection between AlON ceramics and BN-Si3 N4 porous ceramics.
发明内容Contents of the invention
本发明是为了解决现有AlON陶瓷和BN-Si3N4陶瓷连接后接头剪切强度低的问题，而提供一种采用Ag-Cu-Ti钎料钎焊AlON陶瓷和氮化硼氮化硅复合陶瓷的方法。The present invention aims to solve the problem of low joint shear strength after the existing AlON ceramics and BN-Si3 N4 ceramics are connected, and provides a method of brazing AlON ceramics and boron nitride silicon nitride by using Ag-Cu-Ti brazing material method of composite ceramics.
本发明一种采用Ag-Cu-Ti钎料钎焊AlON陶瓷和氮化硼氮化硅复合陶瓷的方法按以下步骤进行：A kind of method of the present invention adopts Ag-Cu-Ti solder brazing AlON ceramics and boron nitride silicon nitride composite ceramics to carry out according to the following steps:
一、依次采用1000#、2000#、3000#的金刚石磨盘将AlON陶瓷的待焊面打磨至光亮无划痕，然后采用0.5μm的金刚石抛光剂对打磨后的AlON陶瓷的待焊面进行抛光，得到待焊AlON陶瓷；1. Use 1000#, 2000#, 3000# diamond grinding discs to polish the AlON ceramic surface to be welded until it is bright and without scratches, and then use 0.5 μm diamond polishing agent to polish the polished AlON ceramic surface to be welded. Obtain AlON ceramics to be welded;
二、依次采用120#、400#、1000#砂纸打磨Ag-Cu-Ti箔片的表面去除氧化膜，然后将打磨后的Ag-Cu-Ti箔片剪切成与待焊AlON陶瓷待焊面相同尺寸，得到钎料箔片；2. Use 120#, 400#, 1000# sandpaper to polish the surface of the Ag-Cu-Ti foil to remove the oxide film, and then cut the polished Ag-Cu-Ti foil into the surface to be welded with the AlON ceramic to be welded Same size, get solder foil;
二、将待焊AlON陶瓷、BN-Si3N4陶瓷和钎料箔片分别置于丙酮中超声清洗5min后吹干，得到清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片；2. Place AlON ceramics to be welded, BN-Si3 N4 ceramics and brazing foil in acetone for 5 minutes and then blow dry to obtain AlON ceramics to be welded and BN-Si3 N4 after cleaning. Ceramic and cleaned solder foils;
三、采用有机胶按照三明治结构对清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片进行装配，得到待焊试样；所述清洗后的钎料箔片置于清洗后的待焊AlON陶瓷和清洗后的BN-Si3N4陶瓷中间；3. Use organic glue to assemble the cleaned AlON ceramics to be welded, the cleaned BN-Si3 N4 ceramics and the cleaned solder foil according to the sandwich structure to obtain the sample to be welded; the cleaned solder foil The material foil is placed between the cleaned AlON ceramics to be welded and the cleaned BN-Si3 N4 ceramics;
四、将待焊试样置于石墨磨具中，垂直于待焊试样待焊面的方向上施加1×104Pa的压力，然后将待焊试样随石墨磨具放入真空钎焊炉中，当真空钎焊炉的真空度达到6×10-3Pa后，先以10℃/min的升温速率将温度从室温升温至300℃，保温30min；再以10℃/min的升温速率将温度从300℃升温至750℃，然后以5℃/min的升温速率将温度从750℃升温至800℃～900℃，保温5min～25min；最后以5℃/min的降温速率将温度从800℃～900℃降温至300℃，再随炉冷却至室温，完成AlON陶瓷和BN-Si3N4陶瓷的连接。4. Place the sample to be welded in the graphite abrasive, apply a pressure of 1×104 Pa in the direction perpendicular to the surface of the sample to be welded, and then put the sample to be welded into the vacuum brazing with the graphite abrasive In the furnace, when the vacuum degree of the vacuum brazing furnace reaches 6×10-3 Pa, the temperature is first raised from room temperature to 300°C at a heating rate of 10°C/min, and kept for 30min; then at a heating rate of 10°C/min Raise the temperature from 300°C to 750°C, then raise the temperature from 750°C to 800°C to 900°C at a heating rate of 5°C/min, and keep it warm for 5min to 25min; finally, raise the temperature from 800°C to ℃～900℃, lower the temperature to 300℃, and then cool down to room temperature with the furnace to complete the connection of AlON ceramics and BN-Si3 N4 ceramics.
本发明的有益效果：Beneficial effects of the present invention:
本发明使用Ag-Cu-Ti钎料箔片成功实现了AlON陶瓷和BN-Si3N4多孔陶瓷的连接。当钎焊温度为850℃，保温时间为15min时，接头的剪切强度最高，达到了116MPa。The invention uses the Ag-Cu-Ti solder foil to successfully realize the connection of AlON ceramics and BN-Si3 N4 porous ceramics. When the brazing temperature is 850℃ and the holding time is 15min, the shear strength of the joint is the highest, reaching 116MPa.
附图说明Description of drawings
图1为实施例一AlON陶瓷和氮化硼氮化硅复合陶瓷连接后接头的微观形貌图。FIG. 1 is a microscopic view of the joint after the connection of AlON ceramics and boron nitride silicon nitride composite ceramics in Example 1.
具体实施方式detailed description
具体实施方式一：本实施方式的一种采用Ag-Cu-Ti钎料钎焊AlON陶瓷和氮化硼氮化硅复合陶瓷的方法按以下步骤进行：Specific embodiment one: a kind of method of adopting Ag-Cu-Ti solder brazing AlON ceramics and boron nitride silicon nitride composite ceramics of the present embodiment is carried out according to the following steps:
一、依次采用1000#、2000#、3000#的金刚石磨盘将AlON陶瓷的待焊面打磨至光亮无划痕，然后采用0.5μm的金刚石抛光剂对打磨后的AlON陶瓷的待焊面进行抛光，得到待焊AlON陶瓷；1. Use 1000#, 2000#, 3000# diamond grinding discs to polish the AlON ceramic surface to be welded until it is bright and without scratches, and then use 0.5 μm diamond polishing agent to polish the polished AlON ceramic surface to be welded. Obtain AlON ceramics to be welded;
二、依次采用120#、400#、1000#砂纸打磨Ag-Cu-Ti箔片的表面去除氧化膜，然后将打磨后的Ag-Cu-Ti箔片剪切成与待焊AlON陶瓷待焊面相同尺寸，得到钎料箔片；2. Use 120#, 400#, 1000# sandpaper to polish the surface of the Ag-Cu-Ti foil to remove the oxide film, and then cut the polished Ag-Cu-Ti foil into the surface to be welded with the AlON ceramic to be welded Same size, get solder foil;
二、将待焊AlON陶瓷、BN-Si3N4陶瓷和钎料箔片分别置于丙酮中超声清洗5min后吹干，得到清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片；2. Place AlON ceramics to be welded, BN-Si3 N4 ceramics and brazing foil in acetone for 5 minutes and then blow dry to obtain AlON ceramics to be welded and BN-Si3 N4 after cleaning. Ceramic and cleaned solder foils;
三、采用有机胶按照三明治结构对清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片进行装配，得到待焊试样；所述清洗后的钎料箔片置于清洗后的待焊AlON陶瓷和清洗后的BN-Si3N4陶瓷中间；3. Use organic glue to assemble the cleaned AlON ceramics to be welded, the cleaned BN-Si3 N4 ceramics and the cleaned solder foil according to the sandwich structure to obtain the sample to be welded; the cleaned solder foil The material foil is placed between the cleaned AlON ceramics to be welded and the cleaned BN-Si3 N4 ceramics;
四、将待焊试样置于石墨磨具中，垂直于待焊试样待焊面的方向上施加1×104Pa的压力，然后将待焊试样随石墨磨具放入真空钎焊炉中，当真空钎焊炉的真空度达到6×10-3Pa后，先以10℃/min的升温速率将温度从室温升温至300℃，保温30min；再以10℃/min的升温速率将温度从300℃升温至750℃，然后以5℃/min的升温速率将温度从750℃升温至800℃～900℃，保温5min～25min；最后以5℃/min的降温速率将温度从800℃～900℃降温至300℃，再随炉冷却至室温，完成AlON陶瓷和BN-Si3N4陶瓷的连接。4. Place the sample to be welded in the graphite abrasive, apply a pressure of 1×104 Pa in the direction perpendicular to the surface of the sample to be welded, and then put the sample to be welded into the vacuum brazing with the graphite abrasive In the furnace, when the vacuum degree of the vacuum brazing furnace reaches 6×10-3 Pa, the temperature is first raised from room temperature to 300°C at a heating rate of 10°C/min, and kept for 30min; then at a heating rate of 10°C/min Raise the temperature from 300°C to 750°C, then raise the temperature from 750°C to 800°C to 900°C at a heating rate of 5°C/min, and keep it warm for 5min to 25min; finally, raise the temperature from 800°C to ℃～900℃, lower the temperature to 300℃, and then cool down to room temperature with the furnace to complete the connection of AlON ceramics and BN-Si3 N4 ceramics.
本实施方式BN-Si3N4陶瓷不宜打磨，对表面不做处理。In this embodiment, the BN-Si3 N4 ceramics are not suitable for grinding, and the surface is not treated.
本实施方式先先以10℃/min的升温速率将温度从室温升温至300℃，保温30min的目的是使有机胶充分挥发。In this embodiment, firstly, the temperature is raised from room temperature to 300° C. at a heating rate of 10° C./min, and the purpose of keeping the temperature for 30 minutes is to fully volatilize the organic glue.
具体实施方式二：本实施方式与具体实施方式一不同的是：步骤二中所述Ag-Cu-Ti箔片中Al、Cu和Ti的质量百分比为69.5:27:3.5。其他步骤及参数与具体实施方式一相同。Embodiment 2: This embodiment differs from Embodiment 1 in that the mass percentages of Al, Cu and Ti in the Ag-Cu-Ti foil described in step 2 are 69.5:27:3.5. Other steps and parameters are the same as those in the first embodiment.
本实施方式中Ag和Cu是共晶成分配比，熔点为780℃，Ag-Cu共晶组织具有良好的塑形变形能力，钎焊完成后的降温过程中，Ag-Cu共晶组织可以通过发生塑性变形缓解接头中的热应力。Ti作为活性元素，可以通过与AlON陶瓷和BN-Si3N4多孔陶瓷的反应实现对其的润湿。In this embodiment, Ag and Cu are in the eutectic composition ratio, and the melting point is 780°C. The Ag-Cu eutectic structure has good plastic deformation ability. During the cooling process after brazing, the Ag-Cu eutectic structure can pass Plastic deformation occurs to relieve thermal stress in the joint. As an active element, Ti can wet it by reacting with AlON ceramics and BN-Si3 N4 porous ceramics.
具体实施方式三：本实施方式与具体实施方式一或二不同的是：步骤二得到的钎料箔片的厚度为100μm。其他步骤及参数与具体实施方式一或二相同。Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the thickness of the solder foil obtained in Step 2 is 100 μm. Other steps and parameters are the same as those in Embodiment 1 or 2.
具体实施方式四：本实施方式与具体实施方式一至三之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至825℃，保温15min。其他步骤及参数与具体实施方式一至三之一相同。Embodiment 4: This embodiment differs from Embodiment 1 to Embodiment 3 in that: in step 4, the temperature is raised from 750° C. to 825° C. at a heating rate of 5° C./min, and kept for 15 minutes. Other steps and parameters are the same as those in the first to third specific embodiments.
具体实施方式五：本实施方式与具体实施方式一至四之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至825℃，保温25min。其他步骤及参数与具体实施方式一至四之一相同。Embodiment 5: This embodiment differs from Embodiment 1 to Embodiment 4 in that: in step 4, the temperature is raised from 750° C. to 825° C. at a heating rate of 5° C./min, and kept for 25 minutes. Other steps and parameters are the same as in one of the specific embodiments 1 to 4.
具体实施方式六：本实施方式与具体实施方式一至五之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至850℃，保温5min。其他步骤及参数与具体实施方式一至五之一相同。Embodiment 6: This embodiment differs from Embodiment 1 to Embodiment 5 in that: in step 4, the temperature is raised from 750° C. to 850° C. at a heating rate of 5° C./min and kept for 5 minutes. Other steps and parameters are the same as one of the specific embodiments 1 to 5.
具体实施方式七：本实施方式与具体实施方式一至六之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至850℃，保温15min。其他步骤及参数与具体实施方式一至六之一相同。Embodiment 7: The difference between this embodiment and one of Embodiments 1 to 6 is that in step 4, the temperature is raised from 750° C. to 850° C. at a heating rate of 5° C./min and kept for 15 minutes. Other steps and parameters are the same as one of the specific embodiments 1 to 6.
具体实施方式八：本实施方式与具体实施方式一至七之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至850℃，保温25min。其他步骤及参数与具体实施方式一至七之一相同。Embodiment 8: The difference between this embodiment and one of Embodiments 1 to 7 is that in step 4, the temperature is raised from 750° C. to 850° C. at a heating rate of 5° C./min and kept for 25 minutes. Other steps and parameters are the same as one of the specific embodiments 1 to 7.
具体实施方式九：本实施方式与具体实施方式一至八之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至800℃，保温15min。其他步骤及参数与具体实施方式一至八之一相同。Embodiment 9: The difference between this embodiment and Embodiment 1 to Embodiment 8 is that in step 4, the temperature is raised from 750° C. to 800° C. at a heating rate of 5° C./min and kept for 15 minutes. Other steps and parameters are the same as one of the specific embodiments 1 to 8.
具体实施方式十：本实施方式与具体实施方式一至九之一不同的是：步骤四中以5℃/min的升温速率将温度从750℃升温至900℃，保温15min。其他步骤及参数与具体实施方式一至九之一相同。Embodiment 10: This embodiment is different from Embodiment 1 to Embodiment 9 in that: in step 4, the temperature is raised from 750°C to 900°C at a heating rate of 5°C/min, and kept for 15 minutes. Other steps and parameters are the same as one of the specific implementation modes 1 to 9.
用以下实施例验证本发明的有益效果：Verify the beneficial effects of the present invention with the following examples:
实施例一：一种采用Ag-Cu-Ti钎料钎焊AlON陶瓷和氮化硼氮化硅复合陶瓷的方法按以下步骤进行：Embodiment one: a kind of method that adopts Ag-Cu-Ti solder to braze AlON ceramics and boron nitride silicon nitride composite ceramics is carried out as follows:
一、依次采用1000#、2000#、3000#的金刚石磨盘将AlON陶瓷的待焊面打磨至光亮无划痕，然后采用0.5μm的金刚石抛光剂对打磨后的AlON陶瓷的待焊面进行抛光，得到待焊AlON陶瓷；1. Use 1000#, 2000#, 3000# diamond grinding discs to polish the AlON ceramic surface to be welded until it is bright and without scratches, and then use 0.5 μm diamond polishing agent to polish the polished AlON ceramic surface to be welded. Obtain AlON ceramics to be welded;
二、依次采用120#、400#、1000#砂纸打磨Ag-Cu-Ti箔片的表面去除氧化膜，然后将打磨后的Ag-Cu-Ti箔片剪切成与待焊AlON陶瓷待焊面相同尺寸，得到钎料箔片；2. Use 120#, 400#, 1000# sandpaper to polish the surface of the Ag-Cu-Ti foil to remove the oxide film, and then cut the polished Ag-Cu-Ti foil into the surface to be welded with the AlON ceramic to be welded Same size, get solder foil;
二、将待焊AlON陶瓷、BN-Si3N4陶瓷和钎料箔片分别置于丙酮中超声清洗5min后吹干，得到清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片；2. Place AlON ceramics to be welded, BN-Si3 N4 ceramics and brazing foil in acetone for 5 minutes and then blow dry to obtain AlON ceramics to be welded and BN-Si3 N4 after cleaning. Ceramic and cleaned solder foils;
三、采用有机胶按照三明治结构对清洗后的待焊AlON陶瓷、清洗后的BN-Si3N4陶瓷和清洗后的钎料箔片进行装配，得到待焊试样；所述清洗后的钎料箔片置于清洗后的待焊AlON陶瓷和清洗后的BN-Si3N4陶瓷中间；3. Use organic glue to assemble the cleaned AlON ceramics to be welded, the cleaned BN-Si3 N4 ceramics and the cleaned solder foil according to the sandwich structure to obtain the sample to be welded; the cleaned solder foil The material foil is placed between the cleaned AlON ceramics to be welded and the cleaned BN-Si3 N4 ceramics;
四、将待焊试样置于石墨磨具中，垂直于待焊试样待焊面的方向上施加1×104Pa的压力，然后将待焊试样随石墨磨具放入真空钎焊炉中，当真空钎焊炉的真空度达到6×10-3Pa后，先以10℃/min的升温速率将温度从室温升温至300℃，保温30min；再以10℃/min的升温速率将温度从300℃升温至750℃，然后以5℃/min的升温速率将温度从750℃升温至850℃，保温15min；最后以5℃/min的降温速率将温度从850℃降温至300℃，再随炉冷却至室温，完成AlON陶瓷和BN-Si3N4陶瓷的连接。4. Place the sample to be welded in the graphite abrasive, apply a pressure of 1×104 Pa in the direction perpendicular to the surface of the sample to be welded, and then put the sample to be welded into the vacuum brazing with the graphite abrasive In the furnace, when the vacuum degree of the vacuum brazing furnace reaches 6×10-3 Pa, the temperature is first raised from room temperature to 300°C at a heating rate of 10°C/min, and kept for 30min; then at a heating rate of 10°C/min Raise the temperature from 300°C to 750°C, then raise the temperature from 750°C to 850°C at a heating rate of 5°C/min, and keep it for 15 minutes; finally, lower the temperature from 850°C to 300°C at a cooling rate of 5°C/min , and then cooled to room temperature with the furnace to complete the connection of AlON ceramics and BN-Si3 N4 ceramics.
步骤二中所述Ag-Cu-Ti箔片中Al、Cu和Ti的质量百分比为69.5:27:3.5。The mass percentages of Al, Cu and Ti in the Ag-Cu-Ti foil described in step 2 are 69.5:27:3.5.
图1为实施例一AlON陶瓷和BN-Si3N4陶瓷连接后接头的微观形貌图；从图中可以看出钎焊接头致密且无明显缺陷，说明Ag-Cu-Ti钎料箔片成功实现了AlON陶瓷和BN-Si3N4陶瓷的连接。当钎焊温度为850℃，保温时间为15min时，接头的剪切强度最高，达到了116MPa。Fig. 1 is the microscopic topography diagram of the joint of AlON ceramics and BN-Si3 N4 ceramics in Example 1; it can be seen from the figure that the brazed joint is compact and has no obvious defects, indicating that the Ag-Cu-Ti solder foil The connection of AlON ceramics and BN-Si3 N4 ceramics was successfully realized. When the brazing temperature is 850℃ and the holding time is 15min, the shear strength of the joint is the highest, reaching 116MPa.
实施例二：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至800℃，保温15min。其他与实施例一相同。Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 800° C. at a heating rate of 5° C./min and kept for 15 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为43MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 43 MPa.
实施例三：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至825℃，保温15min。其他与实施例一相同。Embodiment 3: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 825° C. at a heating rate of 5° C./min and kept for 15 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为68MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 68 MPa.
实施例四：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至875℃，保温15min。其他与实施例一相同。Embodiment 4: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 875° C. at a heating rate of 5° C./min, and kept for 15 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为96MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 96 MPa.
实施例五：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至900℃，保温15min。其他与实施例一相同。Embodiment 5: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 900° C. at a heating rate of 5° C./min and kept for 15 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为62MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 62 MPa.
实施例六：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至850℃，保温5min。其他与实施例一相同。Embodiment 6: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 850° C. at a heating rate of 5° C./min and kept for 5 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为47MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 47 MPa.
实施例七：本实施例与实施例一的不同之处在于：步骤四中以5℃/min的升温速率将温度从750℃升温至850℃，保温25min。其他与实施例一相同。Embodiment 7: The difference between this embodiment and Embodiment 1 is that in step 4, the temperature is raised from 750° C. to 850° C. at a heating rate of 5° C./min and kept for 25 minutes. Others are the same as in Embodiment 1.
本实施例AlON陶瓷和BN-Si3N4陶瓷连接后的接头的剪切强度为89MPa。In this embodiment, the shear strength of the joint between the AlON ceramic and the BN-Si3 N4 ceramic is 89 MPa.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710042448.3ACN106673685B (en) | 2017-01-20 | 2017-01-20 | A method for brazing AlON ceramics and boron nitride silicon nitride composite ceramics with Ag-Cu-Ti solder |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710042448.3ACN106673685B (en) | 2017-01-20 | 2017-01-20 | A method for brazing AlON ceramics and boron nitride silicon nitride composite ceramics with Ag-Cu-Ti solder |
| Publication Number | Publication Date |
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| CN106673685Atrue CN106673685A (en) | 2017-05-17 |
| CN106673685B CN106673685B (en) | 2019-06-11 |
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| CN201710042448.3AActiveCN106673685B (en) | 2017-01-20 | 2017-01-20 | A method for brazing AlON ceramics and boron nitride silicon nitride composite ceramics with Ag-Cu-Ti solder |
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