技术领域technical field
本发明涉及显示技术领域，尤其涉及一种等离子刻蚀方法及等离子刻蚀装置。The invention relates to the field of display technology, in particular to a plasma etching method and a plasma etching device.
背景技术Background technique
基板的制备过程中，常采用等离子体刻蚀的方式来形成基板上的预定图案。等离子体刻蚀是利用高频电源和反应气体生成低温等离子体，其包含离子和自由基，该离子和自由基与待刻蚀基板上未被光刻胶覆盖的物质反应生成挥发性物质，从而达到刻蚀的效果。During the preparation process of the substrate, a predetermined pattern on the substrate is often formed by plasma etching. Plasma etching is to use high-frequency power supply and reactive gas to generate low-temperature plasma, which contains ions and free radicals, which react with substances on the substrate to be etched that are not covered by photoresist to generate volatile substances, thereby achieve the effect of etching.
现有技术是根据待刻蚀膜层的成分，分析出反应生成物化学式，再查找该生成物对应的温度与蒸汽压曲线，找到该生成物固态和气态临界点所对应的温度，作为刻蚀腔室的温度，对待刻蚀基板进行刻蚀。在整个刻蚀过程中，腔室内的温度是固定不变的。The existing technology is to analyze the chemical formula of the reaction product according to the composition of the film to be etched, and then find the temperature and vapor pressure curve corresponding to the product, and find the temperature corresponding to the solid and gaseous critical point of the product as the etching method. The temperature of the chamber is used to etch the substrate to be etched. The temperature in the chamber is constant throughout the etching process.
然而，由于刻蚀过程中刻蚀腔室内生成物的成分会有所变化，设置的固定腔室温度不能与每种生成物的蒸汽压完全匹配，导致部分生成物无法以气态被抽出刻蚀腔室，而会以固态沉积在刻蚀腔室上部电极板或者刻蚀腔室内壁板等部件上，沉积物达到一定重量时会脱落掉在待刻蚀基板表面，导致基板产生异物类不良。However, since the composition of the products in the etching chamber will change during the etching process, the set fixed chamber temperature cannot fully match the vapor pressure of each product, resulting in some products not being able to be pumped out of the etching chamber in a gaseous state. chamber, but will be deposited in solid state on the upper electrode plate of the etching chamber or the inner wall plate of the etching chamber. When the deposit reaches a certain weight, it will fall off on the surface of the substrate to be etched, resulting in foreign matter defects in the substrate.
发明内容Contents of the invention
本发明的实施例提供一种等离子刻蚀方法及等离子刻蚀装置，可提高基板良率。Embodiments of the present invention provide a plasma etching method and a plasma etching device, which can improve substrate yield.
为达到上述目的，本发明的实施例采用如下技术方案：In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:
一方面，提供一种等离子刻蚀方法，包括：从刻蚀腔室中实时采集获取波长-光强图，并根据所述波长-光强图，得到所述刻蚀腔室内含量最多的生成物；根据所述生成物实时控制所述刻蚀腔室内的温度。On the one hand, a plasma etching method is provided, comprising: collecting and acquiring a wavelength-light intensity map in real time from an etching chamber, and obtaining the most abundant product in the etching chamber according to the wavelength-light intensity map ; Control the temperature in the etching chamber in real time according to the product.
优选的，根据所述波长-光强图，得到所述刻蚀腔室内含量最多的生成物，具体包括：根据所述波长-光强图，得到所述刻蚀腔室内光强最强的波长；根据光强最强的波长，得到与其对应的生成物。Preferably, according to the wavelength-light intensity diagram, obtaining the product with the largest content in the etching chamber specifically includes: according to the wavelength-light intensity diagram, obtaining the wavelength with the strongest light intensity in the etching chamber ; According to the wavelength with the strongest light intensity, the corresponding product is obtained.
进一步优选的，所述方法还包括：采集获取预设波长对应的时间-光强图，并根据所述时间-光强图，检测与所述预设波长对应的膜层的刻蚀终点。Further preferably, the method further includes: acquiring a time-light intensity diagram corresponding to a preset wavelength, and detecting an etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity diagram.
优选的，根据所述生成物实时控制所述刻蚀腔室内的温度，具体包括：根据所述生成物得到所述生成物的固气临界温度；控制所述刻蚀腔室的温度等于所述固气临界温度。Preferably, controlling the temperature in the etching chamber in real time according to the product includes: obtaining the solid-gas critical temperature of the product according to the product; controlling the temperature of the etching chamber to be equal to the Solid gas critical temperature.
进一步优选的，根据所述生成物得到所述生成物的固气临界温度，具体包括：根据所述生成物，通过所述生成物的温度与蒸汽压曲线，得到所述生成物的固气临界温度。Further preferably, obtaining the solid-gas critical temperature of the product according to the product specifically includes: obtaining the solid-gas critical temperature of the product through the temperature and vapor pressure curve of the product according to the product. temperature.
或者，根据所述生成物，通过查找生成物-固气临界温度对照表，得到所述生成物的固气临界温度。Or, according to the product, the solid-gas critical temperature of the product is obtained by looking up the product-solid-gas critical temperature comparison table.
另一方面，提供一种等离子刻蚀装置，包括：刻蚀腔室、终点探测结构、以及温度控制结构；所述刻蚀腔室，用于对待刻蚀基板进行刻蚀；所述终点探测结构，用于从所述刻蚀腔室中实时采集获取波长-光强图，并根据所述波长-光强图，得到所述刻蚀腔室内含量最多的生成物；所述温度控制结构，用于根据所述生成物实时控制所述刻蚀腔室内的温度。In another aspect, a plasma etching device is provided, including: an etching chamber, an end point detection structure, and a temperature control structure; the etching chamber is used to etch a substrate to be etched; the end point detection structure , used to collect and acquire a wavelength-light intensity map in real time from the etching chamber, and obtain the product with the most content in the etching chamber according to the wavelength-light intensity map; the temperature control structure is used The temperature in the etching chamber is controlled in real time according to the product.
优选的，所述终点探测结构，具体用于：从所述刻蚀腔室中实时采集获取波长-光强图；根据所述波长-光强图，得到所述刻蚀腔室内光强最强的波长；根据光强最强的波长，得到与其对应的生成物。Preferably, the end point detection structure is specifically used for: collecting and acquiring a wavelength-light intensity diagram in real time from the etching chamber; according to the wavelength-light intensity diagram, obtaining the strongest light intensity in the etching chamber The wavelength; according to the wavelength with the strongest light intensity, the corresponding product is obtained.
进一步优选的，所述终点探测结构，还用于：采集获取预设波长对应的时间-光强图，并根据所述时间-光强图，检测与所述预设波长对应的膜层的刻蚀终点。Further preferably, the end point detection structure is also used to: acquire a time-light intensity diagram corresponding to a preset wavelength, and detect the moment of the film layer corresponding to the preset wavelength according to the time-light intensity diagram. eclipse end point.
优选的，所述温度控制结构，具体用于：根据所述生成物得到所述生成物的固气临界温度；控制所述刻蚀腔室的温度等于所述固气临界温度。Preferably, the temperature control structure is specifically used to: obtain the solid-gas critical temperature of the product according to the product; and control the temperature of the etching chamber to be equal to the solid-gas critical temperature.
基于上述，优选的，所述终点探测结构包括：光强采集器、光纤、以及控制器；所述光强采集器用于采集所述刻蚀腔室内各波长的光强信号，并通过所述光纤将所述光强信号传输至所述控制器；所述控制器将所述光强信号转化为数字信号，获取所述波长-光强图。Based on the above, preferably, the end point detection structure includes: a light intensity collector, an optical fiber, and a controller; the light intensity collector is used to collect light intensity signals of each wavelength in the etching chamber, and pass through the optical fiber The light intensity signal is transmitted to the controller; the controller converts the light intensity signal into a digital signal to obtain the wavelength-light intensity diagram.
本发明实施例提供一种等离子刻蚀方法及等离子刻蚀装置，通过实时采集刻蚀腔室内的生成物，并根据生成物实时监控刻蚀腔室内的温度，使得刻蚀腔室内的主要生成物能以气态被抽出刻蚀腔室，而不会以固态沉积在刻蚀腔室内部，因此不会有沉积物脱落掉在待刻蚀基板表面，从而确保基板的良率。Embodiments of the present invention provide a plasma etching method and a plasma etching device. By collecting the products in the etching chamber in real time and monitoring the temperature in the etching chamber in real time according to the products, the main products in the etching chamber It can be drawn out of the etching chamber in a gaseous state, and will not be deposited in the etching chamber in a solid state, so no deposits will fall off on the surface of the substrate to be etched, thereby ensuring the yield of the substrate.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明实施例提供的一种刻蚀腔室中各波长的波长-光强图；Fig. 1 is a wavelength-light intensity diagram of each wavelength in an etching chamber provided by an embodiment of the present invention;
图2为本发明实施例提供的一种各波长的光强随时间变化图；Fig. 2 is a diagram of light intensity of each wavelength changing with time provided by an embodiment of the present invention;
图3为本发明实施例提供的一种等离子刻蚀方法的流程图；3 is a flowchart of a plasma etching method provided by an embodiment of the present invention;
图4为本发明实施例提供的一种预设波长的光强随时间变化图；Fig. 4 is a diagram of light intensity with time of a preset wavelength provided by an embodiment of the present invention;
图5为本发明实施例提供的一种等离子刻蚀装置。FIG. 5 is a plasma etching device provided by an embodiment of the present invention.
附图标记：Reference signs:
10-刻蚀腔室；20-终点探测结构；30-温度控制结构。10-etching chamber; 20-terminal detection structure; 30-temperature control structure.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
等离子刻蚀的原理为：利用高频电源和反应气体生成低温等离子体，其包含离子和自由基，该离子和自由基与待刻蚀基板上未被光刻胶覆盖的物质反应生成挥发性物质，控制刻蚀腔室内的温度等于含量最多的生成物的固气临界温度，使该生成物转化为气体，被真空泵抽出刻蚀腔室，完成对待刻蚀基板的刻蚀。The principle of plasma etching is: use high-frequency power supply and reactive gas to generate low-temperature plasma, which contains ions and free radicals, and the ions and free radicals react with the substances on the substrate to be etched that are not covered by photoresist to generate volatile substances , controlling the temperature in the etching chamber to be equal to the solid-gas critical temperature of the product with the most content, so that the product is converted into a gas, which is pumped out of the etching chamber by a vacuum pump, and the etching of the substrate to be etched is completed.
本发明实施例提供一种等离子刻蚀方法，包括：An embodiment of the present invention provides a plasma etching method, including:
S10、从刻蚀腔室中实时采集获取如图1所示的波长-光强图，并根据所述波长-光强图，得到刻蚀腔室内含量最多的生成物。S10. Collect and acquire the wavelength-light intensity diagram shown in FIG. 1 in real time from the etching chamber, and obtain the most abundant product in the etching chamber according to the wavelength-light intensity diagram.
其中，不对波长-光强图的采集方式进行限定，例如，可以但不限于采用终点探测装置实时采集刻蚀腔室中各波长的波长-光强图。终点探测装置是一种用于对刻蚀反应进行程度进行监控和判断的光学分析仪器。Wherein, the acquisition method of the wavelength-light intensity diagram is not limited, for example, the wavelength-light intensity diagram of each wavelength in the etching chamber may be collected in real time by using an endpoint detection device. The endpoint detection device is an optical analysis instrument used to monitor and judge the progress of etching reaction.
此处，图1为某一时刻，刻蚀腔室中各波长的波长-光强图，图1中横坐标表示波长的长度，单位为nm；纵坐标表示光强的强度。图1中与A、B、C、D、E五点对应的波长，其光强度较强，但相比之下，与E点对应的波长的光强最强。一种生成物对应一个波长，光强最强，则说明刻蚀腔室中，与该波长对应的生成物的含量最多。从而可根据波长-光强图直接得到刻蚀腔室内含量最多的生成物。Here, FIG. 1 is a wavelength-light intensity graph of each wavelength in the etching chamber at a certain moment. The abscissa in FIG. 1 represents the length of the wavelength in nm; the ordinate represents the intensity of the light intensity. In Figure 1, the wavelengths corresponding to points A, B, C, D, and E have stronger light intensity, but in comparison, the wavelength corresponding to point E has the strongest light intensity. A product corresponds to a wavelength, and the light intensity is the strongest, which means that the content of the product corresponding to this wavelength is the largest in the etching chamber. Therefore, the product with the most content in the etching chamber can be directly obtained according to the wavelength-light intensity diagram.
S20、根据所述生成物实时控制所述刻蚀腔室内的温度。S20. Control the temperature in the etching chamber in real time according to the product.
其中，一种生成物对应一个固气态临界温度，根据刻蚀腔室内生成物的不同，实时监控刻蚀腔室内的温度。Wherein, one product corresponds to a solid-gas critical temperature, and the temperature in the etching chamber is monitored in real time according to the different products in the etching chamber.
本发明实施例提供一种等离子刻蚀方法，通过实时采集刻蚀腔室内的生成物，并根据生成物实时监控刻蚀腔室内的温度，使得刻蚀腔室内各个阶段的主要生成物均能以气态被抽出刻蚀腔室，而不会以固态沉积在刻蚀腔室内部，因此不会有沉积物脱落掉在待刻蚀基板表面，从而确保基板的良率。An embodiment of the present invention provides a plasma etching method. By collecting the products in the etching chamber in real time and monitoring the temperature in the etching chamber in real time according to the products, the main products in each stage in the etching chamber can be The gaseous state is drawn out of the etching chamber, and will not be deposited in the etching chamber in a solid state, so no deposits will fall off on the surface of the substrate to be etched, thereby ensuring the yield of the substrate.
优选的，所述方法还包括：Preferably, the method also includes:
S30、采集获取预设波长对应的时间-光强图，并根据所述时间-光强图，检测与所述预设波长对应的膜层的刻蚀终点。S30. Acquiring a time-light intensity map corresponding to the preset wavelength, and detecting an etching end point of the film layer corresponding to the preset wavelength according to the time-light intensity map.
其中，每一种材料的膜层在刻蚀过程中会产生多种生成物，根据多种生成物可以采集获取得到如图2所示的各波长的时间-光强图。其中，横坐标表示刻蚀时间，单位为s；纵坐标表示强度，每一条曲线代表一种波长。在调试过程中，从图2中选取出强度突变较为明显的曲线所对应的波长作为刻蚀反应过程中的预设波长。在刻蚀反应过程中，采集获取预设波长对应的时间-光强图，预设波长光强的突变点即为刻蚀结束的时刻，从而检测出与预设波长对应的膜层的刻蚀终点。Among them, the film layer of each material will produce various products during the etching process, and the time-light intensity diagram of each wavelength as shown in FIG. 2 can be obtained according to the various products. Wherein, the abscissa represents the etching time, and the unit is s; the ordinate represents the intensity, and each curve represents a wavelength. In the debugging process, the wavelength corresponding to the curve with a more obvious intensity mutation is selected from Fig. 2 as the preset wavelength in the etching reaction process. During the etching reaction process, the time-light intensity diagram corresponding to the preset wavelength is collected and acquired, and the sudden change point of the light intensity of the preset wavelength is the moment when the etching ends, so as to detect the etching of the film layer corresponding to the preset wavelength end.
本发明实施例通过采集获取预设波长对应的时间-光强图，可直接检测出刻蚀终点，无需增加新结构，远离简单，成本较低。The embodiment of the present invention can directly detect the etching end point by collecting the time-light intensity diagram corresponding to the preset wavelength without adding new structures, which is simple and low cost.
下面结合具体的实施例，对本发明实施例提供的等离子刻蚀方法进行说明：The plasma etching method provided by the embodiment of the present invention will be described below in conjunction with specific embodiments:
实施例一Embodiment one
本发明提供一种等离子刻蚀方法，如图3所示，包括：The present invention provides a plasma etching method, as shown in Figure 3, comprising:
S100、从刻蚀腔室中实时采集获取波长-光强图，根据所述波长-光强图，得到刻蚀腔室内光强最强的波长。S100. Collect and acquire a wavelength-light intensity diagram in real time from the etching chamber, and obtain a wavelength with the strongest light intensity in the etching chamber according to the wavelength-light intensity diagram.
其中，如图1所示，某一时刻的波长-光强图中，该时刻E点对应的波长的光强最强。Wherein, as shown in FIG. 1 , in the wavelength-light intensity graph at a certain moment, the light intensity of the wavelength corresponding to point E at this moment is the strongest.
S200、根据光强最强的波长，得到与其对应的生成物。S200. According to the wavelength with the strongest light intensity, obtain the corresponding product.
其中，波长与生成物为一一对应关系。Among them, the wavelength and the product have a one-to-one correspondence.
S300、根据所述生成物得到所述生成物的固气临界温度。S300. Obtain the solid-gas critical temperature of the product according to the product.
其中，生成物与固气临界温度为一一对应关系。根据所述生成物，可以通过查找该生成物的温度与蒸汽压曲线，得到所述生成物的固气临界温度。也可以通过查找预先输入的生成物-固气临界温度对照表，得到所述生成物的固气临界温度。Among them, there is a one-to-one correspondence between the product and the solid-gas critical temperature. According to the product, the solid-gas critical temperature of the product can be obtained by searching the temperature and vapor pressure curve of the product. The solid-gas critical temperature of the product can also be obtained by looking up the pre-input product-solid-gas critical temperature comparison table.
S400、控制刻蚀腔室的温度等于所述固气临界温度。S400. Control the temperature of the etching chamber to be equal to the solid-gas critical temperature.
其中，光强最强的波长发生变化，则含量最多的生成物会相应的发生变化，与生成物对应的固气临界温度就会发生变化，基于此，刻蚀腔室的控制温度也要随之发生变化。在刻蚀过程中，时刻保持刻蚀腔室的温度与各个时刻得到的所述固气临界温度相等。Among them, if the wavelength with the strongest light intensity changes, the product with the most content will change accordingly, and the solid-gas critical temperature corresponding to the product will change. Based on this, the control temperature of the etching chamber also changes with changes. During the etching process, the temperature of the etching chamber is kept equal to the solid-gas critical temperature obtained at each moment.
S500、采集获取预设波长对应的时间-光强图，并根据所述时间-光强图，检测与所述预设波长对应的膜层的刻蚀终点。S500. Acquire a time-light intensity diagram corresponding to a preset wavelength, and detect an etching end point of a film layer corresponding to the preset wavelength according to the time-light intensity diagram.
其中，如图4所示，为预设波长对应的时间-光强图，该波长的光强在刻蚀开始33s后发生突变，因此与该预设波长对应的膜层在刻蚀开始33s后结束。Among them, as shown in Figure 4, it is the time-light intensity diagram corresponding to the preset wavelength. Finish.
例如，在多层刻蚀时，在同一个刻蚀腔室中依次对A-Si、光刻胶、金属Mo(钼)、A-Si进行刻蚀。完成对A-Si的刻蚀后，刻蚀腔室中通入新的反应气体，刻蚀产生新的生成物，此时需要对刻蚀腔室的温度进行调整，以使新的生成物能够以气态被真空泵抽出。For example, during multilayer etching, A-Si, photoresist, metal Mo (molybdenum) and A-Si are etched sequentially in the same etching chamber. After the etching of A-Si is completed, a new reaction gas is introduced into the etching chamber to produce new products. At this time, the temperature of the etching chamber needs to be adjusted so that the new products can It is sucked out by vacuum pump in gaseous state.
此处，通过根据生成物的不同，对刻蚀腔室的温度进行实时控制，使得刻蚀腔室内的温度与每个成分最多的生成物的固气临界温度完全匹配，以使新的生成物能够以气态被真空泵抽出，避免待刻蚀基板产生异物类不良。此外，根据光强最强的波长得到含量最多的生成物，并根据生成物对应的温度与蒸汽压曲线或者生成物-固气临界温度对照表可直接得到生成物的固气临界温度，原理简单，易于实现，且效率高。Here, according to the different products, the temperature of the etching chamber is controlled in real time, so that the temperature in the etching chamber completely matches the solid-gas critical temperature of the product with the most components, so that the new product It can be pumped out by a vacuum pump in a gaseous state to avoid foreign matter defects on the substrate to be etched. In addition, the product with the most content can be obtained according to the wavelength with the strongest light intensity, and the solid-gas critical temperature of the product can be directly obtained according to the corresponding temperature and vapor pressure curve of the product or the product-solid-gas critical temperature comparison table, the principle is simple , is easy to implement and highly efficient.
本发明实施例还提供一种等离子刻蚀装置，如图5所示，包括：刻蚀腔室10、终点探测结构20、以及温度控制结构30；所述刻蚀腔室10，用于对待刻蚀基板进行刻蚀；所述终点探测结构20，用于从刻蚀腔室10中实时采集获取波长-光强图，并根据所述波长-光强图，得到刻蚀腔室10内含量最多的生成物；所述温度控制结构30，用于根据生成物实时控制刻蚀腔室10内的温度。The embodiment of the present invention also provides a plasma etching device, as shown in FIG. 5 , including: an etching chamber 10, an end point detection structure 20, and a temperature control structure 30; etch the substrate; the endpoint detection structure 20 is used to collect and obtain the wavelength-light intensity diagram in real time from the etching chamber 10, and obtain the most content in the etching chamber 10 according to the wavelength-light intensity diagram. The product; the temperature control structure 30 is used to control the temperature in the etching chamber 10 in real time according to the product.
其中，终点探测结构20通过对刻蚀腔室10内反应过程中的生成物进行采集分析，得到刻蚀腔室10内含量最多的生成物的化学式组成，并将生成物发送至与其连接的温度控制结构30。温度控制结构30根据生成物的不同，对刻蚀腔室10内的反应温度进行调控。Among them, the endpoint detection structure 20 collects and analyzes the products during the reaction process in the etching chamber 10, obtains the chemical formula composition of the products with the most content in the etching chamber 10, and sends the products to the connected temperature control structure 30 . The temperature control structure 30 regulates the reaction temperature in the etching chamber 10 according to different products.
本发明实施例提供一种等离子刻蚀装置，通过实时采集刻蚀腔室10内的生成物，并根据生成物实时监控刻蚀腔室10内的温度，使得刻蚀腔室10内的主要生成物能以气态被抽出刻蚀腔室10，而不会以固态沉积在刻蚀腔室10内部，因此不会有沉积物脱落掉在待刻蚀基板表面，从而确保基板的良率。An embodiment of the present invention provides a plasma etching device. By collecting the products in the etching chamber 10 in real time and monitoring the temperature in the etching chamber 10 in real time according to the products, the main products in the etching chamber 10 are The substance can be drawn out of the etching chamber 10 in a gaseous state, and will not be deposited in the etching chamber 10 in a solid state, so no deposits will fall off on the surface of the substrate to be etched, thereby ensuring the yield of the substrate.
优选的，所述终点探测结构20，具体用于：从刻蚀腔室10中实时采集获取波长-光强图；根据所述波长-光强图，得到刻蚀腔室10内光强最强的波长；根据光强最强的波长，得到与其对应的生成物。Preferably, the endpoint detection structure 20 is specifically used for: collecting and acquiring a wavelength-light intensity diagram in real time from the etching chamber 10; according to the wavelength-light intensity diagram, obtaining the strongest light intensity in the etching chamber 10 The wavelength; according to the wavelength with the strongest light intensity, the corresponding product is obtained.
其中，在终点探测结构20中输入生成物与波长的对应表，终点探测结构20采集获取到波长-光强图后，分析得到光强最强的波长，根据生成物与波长对应表得到含量最多的生成物，并将生成物信号传输至温度控制结构30。Among them, the corresponding table of products and wavelengths is input in the terminal detection structure 20. After the terminal detection structure 20 collects and obtains the wavelength-light intensity diagram, it analyzes and obtains the wavelength with the strongest light intensity, and obtains the most content according to the product and wavelength correspondence table. products, and transmit the product signal to the temperature control structure 30.
本发明实施例通过终点探测结构20得到含量最多的生成物，操作方便，原理简单，技术成熟。In the embodiment of the present invention, the product with the largest content is obtained through the end point detection structure 20, which is convenient to operate, simple in principle, and mature in technology.
进一步优选的，所述终点探测结构20，还用于：采集获取预设波长对应的时间-光强图，并根据所述时间-光强图，检测与所述预设波长对应的膜层的刻蚀终点。Further preferably, the end point detection structure 20 is also used to: acquire the time-light intensity diagram corresponding to the preset wavelength, and detect the temperature of the film layer corresponding to the preset wavelength according to the time-light intensity diagram. etch endpoint.
本发明实施例通过采用终点探测结构20检测膜层的刻蚀终点，无需增加新的结构，节省空间，降低成本。In the embodiment of the present invention, the end point detection structure 20 is used to detect the etching end point of the film layer, without adding a new structure, saving space and reducing cost.
优选的，所述温度控制结构30，具体用于：根据所述生成物得到所述生成物的固气临界温度；控制刻蚀腔室10的温度等于所述固气临界温度。Preferably, the temperature control structure 30 is specifically used to: obtain the solid-gas critical temperature of the product according to the product; and control the temperature of the etching chamber 10 to be equal to the solid-gas critical temperature.
其中，在温度控制结构30中输入生成物的温度与蒸汽压曲线或者生成物-固气临界温度对照表，根据终点探测结构20输送的生成物，查找所述曲线或所述对照表得到所述生成物的固气临界温度，并实时控制刻蚀腔室10内的温度等于所述固气临界温度。Wherein, the temperature and vapor pressure curve of the product or the product-solid-gas critical temperature comparison table is input in the temperature control structure 30, and according to the product delivered by the terminal detection structure 20, the curve or the comparison table is searched to obtain the The solid-gas critical temperature of the product, and the temperature in the etching chamber 10 is controlled in real time to be equal to the solid-gas critical temperature.
本发明实施例通过采用温度控制结构30得到生成物的固气临界温度，并控制刻蚀腔室10的温度等于所述固气临界温度，实现实时监测实时控制，原理简单，易于实现。In the embodiment of the present invention, the solid-gas critical temperature of the product is obtained by using the temperature control structure 30, and the temperature of the etching chamber 10 is controlled to be equal to the solid-gas critical temperature, so as to realize real-time monitoring and real-time control. The principle is simple and easy to implement.
基于上述，优选的，所述终点探测结构20包括：光强采集器、光纤、以及控制器；光强采集器用于采集刻蚀腔室10内各波长的光强信号，并通过光纤将光强信号传输至控制器；控制器将光强信号转化为数字信号，获取波长-光强图。Based on the above, preferably, the end point detection structure 20 includes: a light intensity collector, an optical fiber, and a controller; the light intensity collector is used to collect the light intensity signals of each wavelength in the etching chamber 10, and transmit the light intensity through the optical fiber The signal is transmitted to the controller; the controller converts the light intensity signal into a digital signal to obtain a wavelength-light intensity diagram.
其中，光强采集器伸入到刻蚀腔室10内，对各波长的光强信号进行采集，并通过光纤将光强信号传输至控制器，控制器内的电荷耦合元件对光强信号进行模数转换，转换为数字信号，以获取波长-光强图。Wherein, the light intensity collector extends into the etching chamber 10, collects light intensity signals of each wavelength, and transmits the light intensity signals to the controller through an optical fiber, and the charge-coupled element in the controller performs light intensity signals. Analog-to-digital conversion, converting to a digital signal to obtain a wavelength-intensity diagram.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002475.8ACN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710002475.8ACN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
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| CN106504971A CN106504971A (en) | 2017-03-15 |
| CN106504971Btrue CN106504971B (en) | 2018-03-16 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201710002475.8AActiveCN106504971B (en) | 2017-01-03 | 2017-01-03 | A kind of plasma etching method and plasma etching device |
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