技术领域technical field
本发明涉及半导体制造领域，尤其涉及一种MIM电容器结构及其制作方法。The invention relates to the field of semiconductor manufacturing, in particular to a MIM capacitor structure and a manufacturing method thereof.
背景技术Background technique
MIM(金属-绝缘体-金属，metal-insulator-metal)电容器是重要集成电路器件，高质量，高集成度的MIM对于提高产品竞争力有很大帮助。MIM (metal-insulator-metal) capacitors are important integrated circuit devices. High-quality, highly integrated MIMs are of great help to improve product competitiveness.
通常情况下，MIM电容器包括下极板、介质层及上极板，其中，通常情况下MIM电容器的电容容量均由下极板、介质层及上极板的面积等来决定。然而，在某些情况下，需要使用容量较大的MIM电容器。Typically, a MIM capacitor includes a lower plate, a dielectric layer, and an upper plate, where the capacitance of a MIM capacitor is generally determined by the areas of the lower plate, dielectric layer, and upper plate. However, in some cases, larger MIM capacitors need to be used.
现有工艺增大器件MIM电容器电容的方法通常有：1、增大MIM电容器的面积；2、减薄介质层厚度；3、增大介质层的介电常数。然而这些方法在增大电容的同时，也带来了一些问题，比如增大MIM电容器的面积会增大整个芯片的面积，减薄介质层厚度会导致击穿电压降低，新的高介电常数材料和现有CMOS工艺的适应性等问题。The methods for increasing the capacitance of the device MIM capacitor in the existing technology generally include: 1. Enlarging the area of the MIM capacitor; 2. Thinning the thickness of the dielectric layer; 3. Increasing the dielectric constant of the dielectric layer. However, while these methods increase the capacitance, they also bring some problems. For example, increasing the area of the MIM capacitor will increase the area of the entire chip, and reducing the thickness of the dielectric layer will lead to a decrease in the breakdown voltage. The new high dielectric constant Materials and the adaptability of existing CMOS processes and other issues.
发明内容Contents of the invention
本发明的目的在于提供一种MIM电容器结构及其制作方法，能够在不增加面积的前提下提高MIM电容器的电容。The object of the present invention is to provide a MIM capacitor structure and a manufacturing method thereof, which can increase the capacitance of the MIM capacitor without increasing the area.
为了实现上述目的，本发明提出了一种MIM电容器结构，包括：衬底、第一极板、第二极板、第三极板、第一介质层及第二介质层，其中，所述第一极板形成在所述衬底上；所述第一介质层形成在所述第一极板表面；所述第二极板形成在所述第一介质层上，并暴露出第一介质层两端的部分区域；所述第二介质层形成在所述第二极板的表面；所述第三极板形成在所述第二介质层上， 并暴露出第二介质层两端的部分区域；所述第一极板和第三极板通过金属连线进行电连接。In order to achieve the above object, the present invention proposes a MIM capacitor structure, including: a substrate, a first pole plate, a second pole plate, a third pole plate, a first dielectric layer and a second dielectric layer, wherein the first A pole plate is formed on the substrate; the first dielectric layer is formed on the surface of the first pole plate; the second pole plate is formed on the first dielectric layer and exposes the first dielectric layer Partial areas at both ends; the second dielectric layer is formed on the surface of the second pole plate; the third pole plate is formed on the second dielectric layer and exposes partial areas at both ends of the second dielectric layer; The first pole plate and the third pole plate are electrically connected through metal wires.
进一步的，在所述的MIM电容器结构中，所述衬底上设有层间介质层，所述第一极板形成在所述层间介质层上。Further, in the MIM capacitor structure, an interlayer dielectric layer is disposed on the substrate, and the first plate is formed on the interlayer dielectric layer.
进一步的，在所述的MIM电容器结构中，所述第一极板、第二极板和第三极板的材质为铝。Further, in the MIM capacitor structure, the material of the first pole plate, the second pole plate and the third pole plate is aluminum.
进一步的，在所述的MIM电容器结构中，所述第一介质层及第二介质层的材质为二氧化硅或氮化硅。Further, in the MIM capacitor structure, the first dielectric layer and the second dielectric layer are made of silicon dioxide or silicon nitride.
进一步的，在所述的MIM电容器结构中，所述金属连线的材质为铜或钨。Further, in the MIM capacitor structure, the metal connection is made of copper or tungsten.
进一步的，在本发明中还提出了一种MIM电容器结构的制作方法，用于制备如上文所述的MIM电容器结构，包括步骤：Further, the present invention also proposes a manufacturing method of a MIM capacitor structure, which is used to prepare the MIM capacitor structure as described above, including steps:
提供衬底；provide the substrate;
在所述衬底上依次形成第一金属薄膜、第一介质薄膜、第二金属薄膜、第二介质薄膜及第三金属薄膜；sequentially forming a first metal film, a first dielectric film, a second metal film, a second dielectric film and a third metal film on the substrate;
在所述第三金属薄膜上形成图案化的光阻，并对所述第三金属薄膜进行刻蚀，形成第三极板，暴露出所述第二介质薄膜两端部分；forming a patterned photoresist on the third metal film, and etching the third metal film to form a third plate, exposing two ends of the second dielectric film;
在所述第二介质薄膜上形成图案化的光阻，并依次对所述第二介质薄膜及第二金属薄膜进行刻蚀，形成第二介质层和第二极板，暴露出所述第一介质薄膜两端部分；Form a patterned photoresist on the second dielectric film, and sequentially etch the second dielectric film and the second metal film to form a second dielectric layer and a second plate, exposing the first Both ends of the dielectric film;
在所述第一介质薄膜上形成图案化的光阻，并依次对所述第一介质薄膜及第一金属薄膜进行刻蚀，形成一介质层和第一极板，暴露出所述衬底；forming a patterned photoresist on the first dielectric film, and sequentially etching the first dielectric film and the first metal film to form a dielectric layer and a first plate, exposing the substrate;
形成金属连线将所述第一极板和第三极板进行连接。Forming metal connection lines to connect the first pole plate and the third pole plate.
进一步的，在所述的MIM电容器结构的制作方法中，所述图案化的光阻形成步骤包括：涂覆光阻；对所述光阻进行曝光及显影处理。Further, in the manufacturing method of the MIM capacitor structure, the step of forming the patterned photoresist includes: coating photoresist; exposing and developing the photoresist.
进一步的，在所述的MIM电容器结构的制作方法中，在刻蚀完毕后，去除所述图案化的光阻。Further, in the manufacturing method of the MIM capacitor structure, after the etching is completed, the patterned photoresist is removed.
与现有技术相比，本发明的有益效果主要体现在：形成第一极板、第二极板及第三极板，并将第一极板和第三极板进行电连接，从而形成两个并联的电容，进而能够增加整个MIM电容器结构的电容值，并且不会增加整个芯片的面积，还能够很好的与其他工艺进行兼容。Compared with the prior art, the beneficial effects of the present invention are mainly reflected in: forming the first pole plate, the second pole plate and the third pole plate, and electrically connecting the first pole plate and the third pole plate, thereby forming two A capacitor connected in parallel can increase the capacitance value of the entire MIM capacitor structure without increasing the area of the entire chip, and is also well compatible with other processes.
附图说明Description of drawings
图1为本发明一实施例中MIM电容器结构的制作方法的流程图；Fig. 1 is the flowchart of the manufacturing method of MIM capacitor structure in an embodiment of the present invention;
图2为本发明一实施例中MIM电容器结构制作过程中的剖面结构示意图；Fig. 2 is the cross-sectional structure schematic diagram in the manufacturing process of MIM capacitor structure in one embodiment of the present invention;
图3为本发明一实施例中MIM电容器结构制作过程中的另一剖面结构示意图；Fig. 3 is another sectional structure schematic diagram in the manufacturing process of MIM capacitor structure in one embodiment of the present invention;
图4为本发明一实施例中MIM电容器结构制作过程中的另一剖面结构示意图；Fig. 4 is another cross-sectional structure schematic diagram in the manufacturing process of the MIM capacitor structure in an embodiment of the present invention;
图5为本发明一实施例中MIM电容器结构制作过程中的另一剖面结构示意图；Fig. 5 is another cross-sectional structure schematic diagram during the manufacturing process of the MIM capacitor structure in an embodiment of the present invention;
图6为本发明一实施例中MIM电容器结构的结构示意图；FIG. 6 is a structural schematic diagram of a MIM capacitor structure in an embodiment of the present invention;
图7为本发明一实施例中MIM电容器结构的结构示意图。FIG. 7 is a schematic structural diagram of a MIM capacitor structure in an embodiment of the present invention.
具体实施方式detailed description
下面将结合示意图对本发明的MIM电容器结构及其制作方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。The MIM capacitor structure of the present invention and its manufacturing method will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still implement the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述公知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本领域技术人员来说仅仅是常规工作。In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with system-related or business-related constraints. Additionally, it should be recognized that such a development effort might be complex and time consuming, but would nevertheless be merely a routine undertaking for those skilled in the art.
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
请参考图1，在本实施例中，提出了一种MIM电容器结构的制作方法，用于MIM电容器结构，包括步骤：Please refer to FIG. 1. In this embodiment, a method for manufacturing a MIM capacitor structure is proposed, which is used for a MIM capacitor structure, including steps:
S100：提供衬底；S100: providing a substrate;
S200：在所述衬底上依次形成第一金属薄膜、第一介质薄膜、第二金属薄膜、第二介质薄膜及第三金属薄膜；S200: sequentially forming a first metal film, a first dielectric film, a second metal film, a second dielectric film and a third metal film on the substrate;
S300：在所述第三金属薄膜上形成图案化的光阻，并对所述第三金属薄膜进行刻蚀，形成第三极板，暴露出所述第二介质薄膜两端部分；S300: Form a patterned photoresist on the third metal film, and etch the third metal film to form a third plate, exposing both ends of the second dielectric film;
S400：在所述第二介质薄膜上形成图案化的光阻，并依次对所述第二介质薄膜及第二金属薄膜进行刻蚀，形成第二介质层和第二极板，暴露出所述第一介质薄膜两端部分；S400: Form a patterned photoresist on the second dielectric film, and sequentially etch the second dielectric film and the second metal film to form a second dielectric layer and a second electrode plate, exposing the both ends of the first dielectric film;
S500：在所述第一介质薄膜上形成图案化的光阻，并依次对所述第一介质薄膜及第一金属薄膜进行刻蚀，形成一介质层和第一极板，暴露出所述衬底；S500: Form a patterned photoresist on the first dielectric film, and sequentially etch the first dielectric film and the first metal film to form a dielectric layer and a first electrode plate, exposing the substrate end;
S600：形成金属连线将所述第一极板和第三极板进行连接。S600: forming a metal connection to connect the first pole plate and the third pole plate.
具体的，请参考图2至图5，在步骤S100中，提供的衬底上形成有层间介质层100。Specifically, referring to FIG. 2 to FIG. 5 , in step S100 , an interlayer dielectric layer 100 is formed on the provided substrate.
在步骤S200中，在所述层间介质层100上依次形成第一金属薄膜200、第一介质薄膜300、第二金属薄膜400、第二介质薄膜500及第三金属薄膜600；其中，所述第一金属薄膜200、第二金属薄膜400及第三金属薄膜600材质均为铝，其可以采用物理气相沉积形成；每一层薄膜的厚度均可以根据具体需求进行调整，在此不做限定。所述第一介质薄膜300和第二介质薄膜500的材质为二氧化硅或氮化硅，其可以采用化学气相沉积形成，且每一层的厚度均可以根据具体需求进行调整，在此不做限定。In step S200, the first metal film 200, the first dielectric film 300, the second metal film 400, the second dielectric film 500 and the third metal film 600 are sequentially formed on the interlayer dielectric layer 100; wherein, the The first metal film 200 , the second metal film 400 and the third metal film 600 are all made of aluminum, which can be formed by physical vapor deposition; the thickness of each layer of film can be adjusted according to specific requirements, which is not limited here. The material of the first dielectric film 300 and the second dielectric film 500 is silicon dioxide or silicon nitride, which can be formed by chemical vapor deposition, and the thickness of each layer can be adjusted according to specific requirements, which will not be described here. limited.
所述图案化的光阻700形成步骤包括：涂覆光阻；对所述光阻进行曝光及显影处理，从而形成图案化的光阻700，以为后续刻蚀作为掩膜，便于进行刻蚀。在每一次刻蚀完毕后，去除所述图案化的光阻700。The step of forming the patterned photoresist 700 includes: coating the photoresist; exposing and developing the photoresist to form the patterned photoresist 700, which is used as a mask for subsequent etching to facilitate etching. After each etching, the patterned photoresist 700 is removed.
在步骤S300至S500中，分别刻蚀第一金属薄膜200、第一介质薄膜300、第二金属薄膜400、第二介质薄膜500及第三金属薄膜600以形成第一极板210、第一介质层310、第二极板410、第二介质层510及第三极板610。In steps S300 to S500, the first metal film 200, the first dielectric film 300, the second metal film 400, the second dielectric film 500 and the third metal film 600 are respectively etched to form the first electrode plate 210, the first dielectric film layer 310 , the second plate 410 , the second dielectric layer 510 and the third plate 610 .
在步骤S600中，形成金属连线(图未示出)将所述第一极板210和第三极板610进行连接，使第一极板210、第一介质层310与第二极板410构成第一电容结构，第二极板410、第二介质层510及第三极板610构成第二电容结构，并且使第一电容结构和第二电容结构进行并联，进而能够增加整个MIM电容器结构的电容值。In step S600, metal wiring (not shown) is formed to connect the first pole plate 210 and the third pole plate 610, so that the first pole plate 210, the first dielectric layer 310 and the second pole plate 410 The first capacitor structure is formed, the second plate 410, the second dielectric layer 510 and the third plate 610 form the second capacitor structure, and the first capacitor structure and the second capacitor structure are connected in parallel, thereby increasing the overall MIM capacitor structure the capacitance value.
请参考图6和图7，在本实施例中，还提出了一种MIM电容器结构，通过上述方法形成，包括：形成在衬底上的层间介质层100、第一极板210、第二极板410、第三极板610、第一介质层310及第二介质层510，其中，所述第一极板210形成在所述层间介质层100上；所述第一介质层310形成在所述第一极板210表面；所述第二极板410形成在所述第一介质层310上，并暴露出第一介质层310两端的部分区域；所述第二介质层510形成在所述第二极板410的表面；所述第三极板610形成在所述第二介质层510上，并暴露出第二介质层510两端的部分区域；所述第一极板210和第三极板610通过金属连线800进行电连接。所述金属连线800的材质为铜或钨。Please refer to FIG. 6 and FIG. 7. In this embodiment, a MIM capacitor structure is also proposed, which is formed by the above method, including: an interlayer dielectric layer 100 formed on a substrate, a first plate 210, a second The pole plate 410, the third pole plate 610, the first dielectric layer 310 and the second dielectric layer 510, wherein the first pole plate 210 is formed on the interlayer dielectric layer 100; the first dielectric layer 310 is formed On the surface of the first pole plate 210; the second pole plate 410 is formed on the first dielectric layer 310, and exposes part of both ends of the first dielectric layer 310; the second dielectric layer 510 is formed on The surface of the second pole plate 410; the third pole plate 610 is formed on the second dielectric layer 510 and exposes part of the two ends of the second dielectric layer 510; the first pole plate 210 and the second pole plate 610 The three-electrode plate 610 is electrically connected through the metal wire 800 . The metal connection 800 is made of copper or tungsten.
综上，在本发明实施例提供的MIM电容器结构及其制作方法中，形成第一极板、第二极板及第三极板，并将第一极板和第三极板进行电连接，从而形成两个并联的电容，进而能够增加整个MIM电容器结构的电容值，并且不会增加整个芯片的面积，还能够很好的与其他工艺进行兼容。To sum up, in the MIM capacitor structure and manufacturing method provided by the embodiments of the present invention, the first plate, the second plate, and the third plate are formed, and the first plate and the third plate are electrically connected, Thus, two capacitors connected in parallel can be formed, thereby increasing the capacitance value of the entire MIM capacitor structure without increasing the area of the entire chip, and being well compatible with other processes.
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。The foregoing are only preferred embodiments of the present invention, and do not limit the present invention in any way. Any person skilled in the technical field, within the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the technical solution of the present invention. The content still belongs to the protection scope of the present invention.
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| CN201610890521.8ACN106449606A (en) | 2016-10-12 | 2016-10-12 | MIM capacitor structure and manufacturing method therefor |
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| CN201610890521.8ACN106449606A (en) | 2016-10-12 | 2016-10-12 | MIM capacitor structure and manufacturing method therefor |
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| CN106449606Atrue CN106449606A (en) | 2017-02-22 |
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| CN201610890521.8APendingCN106449606A (en) | 2016-10-12 | 2016-10-12 | MIM capacitor structure and manufacturing method therefor |
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| CN105448887A (en)* | 2014-08-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | High-voltage MiM capacitor |
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| CN102148137A (en)* | 2010-02-10 | 2011-08-10 | 上海宏力半导体制造有限公司 | MIM (metal injection molding) capacitor and formation technology therefor |
| CN102610660A (en)* | 2012-03-31 | 2012-07-25 | 上海宏力半导体制造有限公司 | Cascaded MIM (multifunctional interface module) capacitor structure and semiconductor apparatus |
| CN105448887A (en)* | 2014-08-28 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | High-voltage MiM capacitor |
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| CN109473486A (en)* | 2018-10-18 | 2019-03-15 | 上海华虹宏力半导体制造有限公司 | Capacitor structure and method of making the same |
| CN112420925A (en)* | 2019-08-23 | 2021-02-26 | 台湾积体电路制造股份有限公司 | Semiconductor device, capacitor structure and forming method thereof |
| CN114335342A (en)* | 2021-12-16 | 2022-04-12 | 上海华虹宏力半导体制造有限公司 | A kind of PPM capacitor and preparation method thereof |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication | Application publication date:20170222 |