对相关申请的交叉引用Cross References to Related Applications
该申请是于2011年11月30日提交的名称为“A MICRO-ELECTROMECHANICAL SWITCH ANDA RELATED METHOD THEREOF”的美国专利申请No. 13/307262的部分连续案。This application is a continuation-in-part of US Patent Application No. 13/307262, filed on November 30, 2011, entitled "A MICRO-ELECTROMECHANICAL SWITCH ANDA RELATED METHOD THEREOF".
背景技术Background technique
本发明一般涉及微机电装置，且更特别地，涉及集成微机电开关。The present invention relates generally to microelectromechanical devices, and more particularly, to integrated microelectromechanical switches.
微机电系统（MEMS）装置具有广泛各种的应用，且普遍于商业产品中。一种类型的MEMS装置是MEMS开关。通常的MEMS开关包括以阵列来安排的一个或更多MEMS开关。MEMS开关非常适合于包括移动电话、无线网络、通信系统、以及雷达系统的应用。在无线装置中，MEMS开关能够被用作天线开关、模式开关、传送/接收开关、以及诸如此类。Microelectromechanical systems (MEMS) devices have a wide variety of applications and are ubiquitous in commercial products. One type of MEMS device is a MEMS switch. A typical MEMS switch includes one or more MEMS switches arranged in an array. MEMS switches are well suited for applications including mobile phones, wireless networks, communication systems, and radar systems. In wireless devices, MEMS switches can be used as antenna switches, mode switches, transmit/receive switches, and the like.
通常的MEMS开关使用在一端被支持的电镀金属悬臂以及安排在金属悬臂的另一端的电触位。控制电极被定位在金属悬臂的下面。直流（“DC”）激励（actuation）电压跨控制电极被施加到金属悬臂，迫使金属悬臂向下弯曲并与底部信号迹线（trace）形成电接触。一旦建立了电接触，则电路闭合且电信号能够穿过金属悬臂到底部信号迹线。A typical MEMS switch uses a cantilever of plated metal supported at one end and electrical contacts arranged at the other end of the cantilever. A control electrode is positioned on the underside of the metal cantilever. A direct current ("DC") actuation voltage is applied to the metal cantilever across the control electrodes, forcing the metal cantilever to bend downward and make electrical contact with the bottom signal trace. Once electrical contact is established, the circuit is closed and electrical signals can pass through the metal cantilever to the bottom signal trace.
一种类型的MEMS装置是MEMS射频（RF）开关。由于MEMS RF开关的低驱动功率特性以及其在射频范围中操作的能力，MEMS RF开关被用于无线装置。然而，当显著的RF电压被施加在梁（beam）电极和接触电极之间时，问题频繁地在MEMS RF开关内出现。此类电压可耦合到控制电极上，并对开关进行自激励。换言之，这些MEMS开关通常遭受其中开关内的悬臂梁由于高电压RF信号从而可在“关闭”状态激励（自激励）的问题。因而，高电压RF信号产生足够的静电力来下拉开关梁，并引起故障。One type of MEMS device is a MEMS radio frequency (RF) switch. MEMS RF switches are used in wireless devices due to their low drive power characteristics and their ability to operate in the radio frequency range. However, problems frequently arise within MEMS RF switches when significant RF voltages are applied between the beam electrodes and the contact electrodes. Such a voltage can be coupled to the control electrode and self-energize the switch. In other words, these MEMS switches typically suffer from a problem where the cantilever beam within the switch can be excited in the "off" state (self-excited) due to a high voltage RF signal. Thus, a high voltage RF signal generates enough electrostatic force to pull down the switch beam and cause a malfunction.
与MEMS RF开关关联的另一个缺点是基于在接触电极生成的残余能量而生成的“热开关”电压。此类残余能量可基于来自系统的残余电压以及从门控（gate）线路到所述接触电极的耦合能量来被生成。Another disadvantage associated with MEMS RF switches is the "hot switching" voltage generated based on the residual energy generated at the contact electrodes. Such residual energy may be generated based on residual voltage from the system and coupled energy from gate lines to the contact electrodes.
存在对于一种提高的系统的需要，其克服与电压隔绝（standoff）容量（capability）以及热开关电压的生成相关联的缺点。A need exists for an improved system that overcomes the disadvantages associated with voltage standoff capability and generation of thermal switching voltages.
发明内容Contents of the invention
依照一个示范实施例，公开了一种具有耦合到彼此的、包括多个门控的多个微机电开关的系统。每一个微机电开关包括布置在基底上的梁电极。梁包括耦合到所述梁电极的锚部分。所述梁包括沿第一方向从所述锚部分延伸的第一梁部分；以及沿与所述第一方向相反的第二方向从所述锚部分延伸的第二梁部分。第一控制电极和第一接触电极被布置在所述基底上，面向所述第一梁部分。第二控制电极和第二接触电极被布置在所述基底上，面向所述第二梁部分。所述第一控制电极和所述第二控制电极被耦合，以形成所述多个门控之中的门控。所述多个微机电开关以串联安排、并联安排中的至少一个来安排。According to one exemplary embodiment, a system having a plurality of microelectromechanical switches coupled to each other, including a plurality of gates, is disclosed. Each microelectromechanical switch includes beam electrodes disposed on a substrate. The beam includes an anchor portion coupled to the beam electrode. The beam includes a first beam portion extending from the anchor portion in a first direction; and a second beam portion extending from the anchor portion in a second direction opposite the first direction. A first control electrode and a first contact electrode are arranged on the substrate facing the first beam portion. A second control electrode and a second contact electrode are arranged on the substrate facing the second beam portion. The first control electrode and the second control electrode are coupled to form a gate among the plurality of gates. The plurality of microelectromechanical switches are arranged in at least one of a series arrangement, a parallel arrangement.
依照另一个示范实施例，公开了一种关联方法。所述方法包含均等地施加激励电压到耦合到彼此的、包括多个门控的多个微机电开关。每一个微机电开关包括布置在基底上的梁电极。梁包括耦合到所述梁电极的锚部分。所述梁包括沿第一方向从所述锚部分延伸的第一梁部分；以及沿与所述第一方向相反的第二方向从所述锚部分延伸的第二梁部分。第一控制电极和第一接触电极被布置在所述基底上，面向所述第一梁部分。第二控制电极和第二接触电极被布置在所述基底上，面向所述第二梁部分。所述第一控制电极和所述第二控制电极被耦合，以形成所述多个门控之中的门控。所述多个微机电开关以串联安排、并联安排中的至少一个来安排。According to another exemplary embodiment, a method of associating is disclosed. The method includes equally applying an actuation voltage to a plurality of microelectromechanical switches, including a plurality of gates, coupled to each other. Each microelectromechanical switch includes beam electrodes disposed on a substrate. The beam includes an anchor portion coupled to the beam electrode. The beam includes a first beam portion extending from the anchor portion in a first direction; and a second beam portion extending from the anchor portion in a second direction opposite the first direction. A first control electrode and a first contact electrode are arranged on the substrate facing the first beam portion. A second control electrode and a second contact electrode are arranged on the substrate facing the second beam portion. The first control electrode and the second control electrode are coupled to form a gate among the plurality of gates. The plurality of microelectromechanical switches are arranged in at least one of a series arrangement, a parallel arrangement.
附图说明Description of drawings
本发明的这些以及其它特征、方面、和优势在参照附图来阅读以下详细描述时，将变得更好地被理解。在所述附图中，相似的字符表示在图的各处相似的部件，其中：These and other features, aspects, and advantages of the present invention will become better understood from the following detailed description when read with the accompanying drawings. In the drawings, like characters indicate like parts throughout the figures, wherein:
图1是依照本发明的一示范实施例的、用于解耦线圈系统的一个或更多表面线圈的微机电系统（MEMS）装置的图解表示；1 is a diagrammatic representation of a microelectromechanical system (MEMS) device for decoupling one or more surface coils of a coil system, in accordance with an exemplary embodiment of the present invention;
图2是依照本发明的一示范实施例的、具有MEMS开关系统的MEMS装置的截面视图；2 is a cross-sectional view of a MEMS device with a MEMS switching system in accordance with an exemplary embodiment of the present invention;
图3是依照图2的一实施例的MEMS开关的图解表示；以及FIG. 3 is a diagrammatic representation of a MEMS switch according to an embodiment of FIG. 2; and
图4是依照图2的一实施例的MEMS开关的图解表示；Figure 4 is a diagrammatic representation of a MEMS switch according to one embodiment of Figure 2;
图5是示出依照一示范实施例的耦合到彼此的多个MEMS开关的示意电路图解；FIG. 5 is a schematic circuit diagram showing a plurality of MEMS switches coupled to each other in accordance with an exemplary embodiment;
图6是示出依照一示范实施例的耦合到彼此的且被提供有多个阻抗装置的多个MEMS开关的示意电路图解；6 is a schematic circuit diagram showing a plurality of MEMS switches coupled to each other and provided with a plurality of impedance means according to an exemplary embodiment;
图7是示出依照另一个示范实施例的耦合到彼此的且被提供有多个阻抗装置的多个MEMS开关的示意电路图解；以及7 is a schematic circuit diagram showing a plurality of MEMS switches coupled to each other and provided with a plurality of impedance means according to another exemplary embodiment; and
图8是示出依照还有的另一个示范实施例的耦合到彼此的且被提供有多个阻抗装置的多个MEMS开关的示意电路图解。Fig. 8 is a schematic circuit diagram showing a plurality of MEMS switches coupled to each other and provided with a plurality of impedance means in accordance with yet another exemplary embodiment.
具体实施方式detailed description
依照本发明的某些实施例，一种系统包括耦合到彼此的、具有多个门控的多个微机电开关。每一个微机电开关包括布置在基底上的梁电极。微机电开关进一步包括梁，该梁具有耦合到梁电极的锚部分、沿第一方向从锚部分延伸的第一梁部分、以及沿与第一方向相反的第二方向从锚部分延伸的第二梁部分。微机电开关还包括面向第一梁部分的、布置在基底上的第一控制电极和第一接触电极，以及面向第二梁部分的、布置在基底上的第二控制电极和第二接触电极。第一控制电极和第二控制电极被耦合，以形成在所述多个门控之中的门控。所述多个微机电开关以串联安排、并联安排中的至少一个来安排。According to some embodiments of the invention, a system includes a plurality of microelectromechanical switches having a plurality of gates coupled to each other. Each microelectromechanical switch includes beam electrodes disposed on a substrate. The microelectromechanical switch further includes a beam having an anchor portion coupled to the beam electrode, a first beam portion extending from the anchor portion in a first direction, and a second beam portion extending from the anchor portion in a second direction opposite to the first direction. Beam section. The microelectromechanical switch further includes a first control electrode and a first contact electrode disposed on the substrate facing the first beam portion, and a second control electrode and a second contact electrode disposed on the substrate facing the second beam portion. The first control electrode and the second control electrode are coupled to form a gate among the plurality of gates. The plurality of microelectromechanical switches are arranged in at least one of a series arrangement, a parallel arrangement.
参照图1，公开了一种用于解耦射频（RF）装置15（例如，磁共振成像（MRI）系统）中的线圈系统14的一个或更多表面线圈12的微机电系统（MEMS）装置10。在本文中应当注意到的是，尽管公开的是MRI系统，但在其它实施例中，MEMS装置10可用于其它的应用。例如，在另一个实施例中，装置15可以是雷达系统。在所示出的实施例中，MEMS装置10允许进行开关来隔离一个或更多表面线圈12，特别是射频（RF）磁共振线圈。在一个实施例中，在MRI传送操作期间，MEMS装置10可操作来对配置成作为接收表面线圈的表面线圈12进行解耦。在一个实施例中，MEMS装置10在传送操作期间处于打开状态中，以将表面线圈12（接收RF线圈）从线圈系统14解耦。MEMS装置10在接收操作期间处于闭合状态，使得表面线圈12与所接收的MR信号共振并耦合，使得所接收的MR信号被传送到RF接收器16。MEMS装置10由开关控制器18来控制，开关控制器18将MEMS装置10从打开状态切换到闭合状态，且反之亦然。在一些实施例中，MEMS装置10在线圈系统14没有被偏置时处于正常打开状态（解耦状态）中。然而，在其它实施例中，MEMS装置10在线圈系统14没有被偏置时处于正常闭合状态中。Referring to FIG. 1 , a microelectromechanical system (MEMS) device for decoupling one or more surface coils 12 of a coil system 14 in a radio frequency (RF) device 15, such as a magnetic resonance imaging (MRI) system, is disclosed. 10. It should be noted herein that although an MRI system is disclosed, in other embodiments the MEMS device 10 may be used in other applications. For example, in another embodiment, device 15 may be a radar system. In the illustrated embodiment, the MEMS device 10 allows switching to isolate one or more surface coils 12 , particularly radio frequency (RF) magnetic resonance coils. In one embodiment, during an MRI transmit operation, MEMS device 10 is operable to decouple surface coil 12 configured as a receiving surface coil. In one embodiment, the MEMS device 10 is in an open state during the transfer operation to decouple the surface coil 12 (receive RF coil) from the coil system 14 . The MEMS device 10 is in a closed state during receive operation such that the surface coil 12 resonates and couples with the received MR signal such that the received MR signal is transmitted to the RF receiver 16 . The MEMS device 10 is controlled by a switch controller 18, which switches the MEMS device 10 from an open state to a closed state, and vice versa. In some embodiments, MEMS device 10 is in a normally open state (decoupled state) when coil system 14 is not biased. However, in other embodiments, MEMS device 10 is in a normally closed state when coil system 14 is not biased.
在本文中应当注意到的是，在其它实施例中，MEMS装置10可关于操作在不同频率的不同类型的磁共振表面线圈（在本文中也被称作为“表面线圈”）来使用。所述表面线圈可以是单频率或双频率（双重调谐）RF线圈。在一些实施例中，双频率RF线圈包括同心线圈元件，所述同心线圈元件被调谐共振在不同的频率，例如，对于碳一个共振和对于质子一个共振，即共振在碳和质子的拉莫尔（Larmor）频率，以诱导碳原子和质子中的拉莫尔进动。应当注意到的是，MEMS装置10不被限制于只耦合到接收表面线圈。例如，MEMS装置10可被耦合到仅传送的线圈或传送/接收线圈的组合。It should be noted herein that in other embodiments the MEMS device 10 may be used with different types of magnetic resonance surface coils (also referred to herein as "surface coils") operating at different frequencies. The surface coils may be single frequency or dual frequency (dual tuned) RF coils. In some embodiments, the dual-frequency RF coil includes concentric coil elements that are tuned to resonate at different frequencies, for example, one resonance for carbon and one resonance for protons, i.e. resonating at the Larmor of carbon and protons. (Larmor) frequency to induce Larmor precession in carbon atoms and protons. It should be noted that MEMS device 10 is not limited to being coupled only to receiving surface coils. For example, MEMS device 10 may be coupled to a transmit-only coil or a combination transmit/receive coil.
MEMS装置10的各种实施例可被提供作为单模态或多模态磁共振成像系统的部件。MRI系统可与不同类型的医疗成像系统组合，诸如计算的断层摄影（Computed Tomography，CT）、正电子发射断层摄影（PET）、单光子发射计算的断层摄影（SPECT），以及超声系统，或能够生成图像（特别是人类的）的任何其它系统。此外，所述各种实施例不是被限制于用于对人类对象进行成像的医疗成像系统，而是可以包括用于对非人类目标、行李、或诸如此类的进行成像的兽医的或非医疗的系统。Various embodiments of the MEMS device 10 may be provided as components of a single modality or multimodal magnetic resonance imaging system. MRI systems can be combined with different types of medical imaging systems, such as computed tomography (CT), positron emission tomography (PET), single photon emission computed tomography (SPECT), and ultrasound systems, or can Any other system that generates images, especially of humans. Furthermore, the various embodiments are not limited to medical imaging systems for imaging human subjects, but may include veterinary or non-medical systems for imaging non-human objects, luggage, or the like .
MEMS装置10可被耦合到一个或更多表面线圈12，例如，一个或更多接收表面线圈。在一个实施例中，单个MEMS装置10可被耦合到每一个表面线圈12。在另一个实施例中，单个MEMS装置10可被耦合到多个表面线圈12。在一具体实施例中，独立的MEMS装置10可被耦合到表面线圈12中的每一个。另外，MEMS装置10可配置成对所有的表面线圈12或表面线圈12中的被挑选的那些进行解耦。尽管表面线圈12可以特定的安排被示出，诸如其中内部线圈元件和外部元件形成环路线圈对（双频率或双重调谐RF线圈元件），但MEMS装置10可用来控制对任何类型的MRI线圈进行解耦，特别是任何类型的磁共振接收表面线圈或传送表面线圈。应当注意到的是，MEMS装置10不被限制于只耦合到接收表面线圈。在一个实施例中，MEMS装置10可耦合到仅传送的线圈或组合传送/接收线圈。MEMS device 10 may be coupled to one or more surface coils 12, eg, one or more receiving surface coils. In one embodiment, a single MEMS device 10 may be coupled to each surface coil 12 . In another embodiment, a single MEMS device 10 may be coupled to multiple surface coils 12 . In a particular embodiment, a separate MEMS device 10 may be coupled to each of the surface coils 12 . Additionally, the MEMS device 10 may be configured to decouple all or selected ones of the surface coils 12 . Although the surface coil 12 may be shown in a particular arrangement, such as where an inner coil element and an outer element form a loop coil pair (dual frequency or dual tuned RF coil elements), the MEMS device 10 can be used to control the operation of any type of MRI coil. Decoupling, especially of any type of magnetic resonance receive surface coil or transmit surface coil. It should be noted that MEMS device 10 is not limited to being coupled only to receiving surface coils. In one embodiment, MEMS device 10 may be coupled to a transmit-only coil or a combined transmit/receive coil.
参照图2，MEMS装置10被示出。在所示出的实施例中，MEMS装置10包括MEMS开关20。MEMS装置10包括基底22、梁24、梁电极26、第一和第二控制电极28、30，以及第一和第二接触电极32、34。在一些实施例中，可使用多于一个基底。这种背对背配置能够通过或一个基底或多个基底来实例化。Referring to FIG. 2 , a MEMS device 10 is shown. In the illustrated embodiment, MEMS device 10 includes MEMS switch 20 . The MEMS device 10 includes a substrate 22 , a beam 24 , a beam electrode 26 , first and second control electrodes 28 , 30 , and first and second contact electrodes 32 , 34 . In some embodiments, more than one substrate can be used. This back-to-back configuration can be instantiated with either one substrate or multiple substrates.
在所示出的实施例中，第一中间层36布置在基底22上。第一控制电极28经由第二中间层38布置在第一中间层36上。第二控制电极30经由第三中间层40布置在第一中间层36上。第一接触电极32经由第四中间层42布置在第一中间层36上。第二接触电极34经由第五中间层44布置在第一中间层36上。梁电极26经由第六中间层37布置在第一中间层36上。在本文中应当注意到的是，中间层的数量可依赖于应用而变化。In the illustrated embodiment, a first intermediate layer 36 is disposed on the substrate 22 . The first control electrode 28 is arranged on the first intermediate layer 36 via the second intermediate layer 38 . The second control electrode 30 is arranged on the first intermediate layer 36 via the third intermediate layer 40 . The first contact electrode 32 is arranged on the first intermediate layer 36 via the fourth intermediate layer 42 . The second contact electrode 34 is arranged on the first intermediate layer 36 via the fifth intermediate layer 44 . The beam electrodes 26 are arranged on the first intermediate layer 36 via the sixth intermediate layer 37 . It should be noted herein that the number of intermediate layers may vary depending on the application.
梁24包括锚部分46、第一梁部分48、以及第二梁部分50。在一些实施例中，梁24可包括多于一个锚部分，其中锚部分相互电耦合。在所示出的实施例中，锚部分46经由第七中间层52耦合到梁电极26。第一梁部分48沿第一方向54从锚部分46延伸，且第二梁部分50沿与第一方向54相反的第二方向56从锚部分46延伸。第一控制电极28和第一接触电极32面向第一梁部分48来布置。第二控制电极30和第二接触电极34面向第二梁部分50来布置。在所示出的实施例中，第一控制电极28和第二控制电极30被耦合来形成门控58。门控58是任意类型的电压源，例如，方波电压源，该方波电压源能够驱动或偏置MEMS开关20以引起MEMS开关20中的梁24弯曲或倾斜，使得通过MEMS开关20的电路径（即，MEMS开关20的闭合状态）被提供。种子层60形成在梁24上，面向梁电极26，第一和第二控制电极28、30，第一和第二接触电极32、34，以及第一中间层36。The beam 24 includes an anchor portion 46 , a first beam portion 48 , and a second beam portion 50 . In some embodiments, beam 24 may include more than one anchor portion, where the anchor portions are electrically coupled to each other. In the illustrated embodiment, the anchor portion 46 is coupled to the beam electrode 26 via a seventh intermediate layer 52 . The first beam portion 48 extends from the anchor portion 46 in a first direction 54 and the second beam portion 50 extends from the anchor portion 46 in a second direction 56 opposite the first direction 54 . The first control electrode 28 and the first contact electrode 32 are arranged facing the first beam portion 48 . The second control electrode 30 and the second contact electrode 34 are arranged facing the second beam portion 50 . In the illustrated embodiment, first control electrode 28 and second control electrode 30 are coupled to form gate 58 . Gate 58 is any type of voltage source, such as a square wave voltage source, capable of driving or biasing MEMS switch 20 to cause beam 24 in MEMS switch 20 to bend or tilt such that the current passing through MEMS switch 20 A path (ie, the closed state of MEMS switch 20 ) is provided. The seed layer 60 is formed on the beam 24 facing the beam electrode 26 , the first and second control electrodes 28 , 30 , the first and second contact electrodes 32 , 34 , and the first intermediate layer 36 .
梁24可从不同材料来形成。例如，梁24可从一个或更多不同金属，诸如金、金合金、镍、镍合金、钨、或诸如此类来形成。基底22可包括硅、硅石、石英、或诸如此类，且中间层可包括氮化硅、氧化硅、粘附层、或诸如此类。电极26、28、30、32、34可包括金属，诸如金、铂、钽、或诸如此类。在一具体实施例中，电极26、28、30、32、34可包括金属氧化物。在本文中应当注意到的是，本文中公开的梁24、基底22、以及电极26、28、30、32、34的组成不是包括所有的，且可依赖于应用而变化。MEMS开关20可使用包含沉积、阳极处理、图案化（patterning）、刻蚀、或诸如此类的技术来制造。Beam 24 may be formed from different materials. For example, beam 24 may be formed from one or more different metals, such as gold, gold alloys, nickel, nickel alloys, tungsten, or the like. Substrate 22 may include silicon, silica, quartz, or the like, and the intermediate layer may include silicon nitride, silicon oxide, an adhesion layer, or the like. The electrodes 26, 28, 30, 32, 34 may comprise a metal, such as gold, platinum, tantalum, or the like. In a particular embodiment, the electrodes 26, 28, 30, 32, 34 may comprise metal oxides. It should be noted herein that the compositions of beam 24, substrate 22, and electrodes 26, 28, 30, 32, 34 disclosed herein are not all-inclusive and may vary depending on the application. MEMS switch 20 may be fabricated using techniques including deposition, anodizing, patterning, etching, or the like.
梁24的尺寸例如基于特定的弯曲或倾斜要求（诸如需要多少力来弯曲或倾斜梁24）可以是变化的。梁24的尺寸和配置也可以是基于施加在门控58和梁电极26之间的、用来倾斜梁24的电压。梁24的尺寸和配置还可以是基于用来弯曲梁24的门控58的电压。在本文中应当注意到的是，MEMS开关20可从不同的材料和使用不同的过程来形成（例如基于对于MEMS装置20的特定应用（例如，MRI系统应用）），以确保装置在不影响环境的情况下恰当地操作在特定的环境中。The dimensions of the beam 24 may vary, eg, based on particular bending or tilting requirements, such as how much force is required to bend or tilt the beam 24 . The size and configuration of the beam 24 may also be based on the voltage applied between the gate 58 and the beam electrode 26 to tilt the beam 24 . The size and configuration of the beam 24 may also be based on the voltage of the gate 58 used to bend the beam 24 . It should be noted herein that the MEMS switch 20 can be formed from different materials and using different processes (e.g. based on the particular application for the MEMS device 20 (e.g., MRI system application)) to ensure that the device operates without impacting the environment. to operate appropriately in a particular environment.
在一些实施例中，MEMS装置10可包括多个MEMS开关20，所述多个MEMS开关20在被耦合到表面线圈时基于例如成像系统（例如，MRI系统）是否处在传送或接收模式中，来分别操作在或打开或闭合状态中。在一些实施例中，MEMS开关20可串联地耦合来形成组。在某些实施例中，MEMS开关20的集合或组可并联耦合到彼此。In some embodiments, the MEMS device 10 may include a plurality of MEMS switches 20 that when coupled to the surface coil are based, for example, on whether the imaging system (eg, MRI system) is in transmit or receive mode, to operate in either open or closed states, respectively. In some embodiments, MEMS switches 20 may be coupled in series to form groups. In certain embodiments, sets or groups of MEMS switches 20 may be coupled to each other in parallel.
当没有激励电压被施加在门控58和梁电极26之间时，第一梁部分48和第二梁部分50被布置在第一位置，以这样一种方法使得第一梁部分48的第一梁接触部分62和第二梁部分50的第二梁接触部分64分别与第一接触电极32和第二接触电极34分隔开，这被称作为“打开状态”。当激励电压被施加在门控58和梁电极26之间时，第一梁部分48和第二梁部分50从第一位置被偏置到第二位置，以这样一种方法使得第一梁接触部分62和第二梁接触部分64分别接触第一接触电极32和第二接触电极34，从而允许电流从第一和第二梁接触部分62、64流到第一和第二接触电极32、34，这被称作为“闭合状态”。When no excitation voltage is applied between the gate 58 and the beam electrode 26, the first beam portion 48 and the second beam portion 50 are arranged in the first position in such a way that the first beam portion 48 The beam contact portion 62 and the second beam contact portion 64 of the second beam portion 50 are separated from the first contact electrode 32 and the second contact electrode 34 respectively, which is referred to as an "open state". When an excitation voltage is applied between the gate 58 and the beam electrode 26, the first beam portion 48 and the second beam portion 50 are biased from the first position to the second position in such a way that the first beam contacts The portion 62 and the second beam contact portion 64 contact the first contact electrode 32 and the second contact electrode 34 respectively, thereby allowing current to flow from the first and second beam contact portions 62, 64 to the first and second contact electrodes 32, 34. , which is called the "closed state".
如先前所讨论的，MEMS RF开关被用于无线装置，因为它们的低功率特性以及在射频范围中操作的能力。然而，如果常规三端子MEMS开关被提供到RF阻断路径中，则在开关的打开状态中，电压在接触电极和控制电极之间被生成。该电压是因为在接触电极和梁电极之间的电容与在接触电极和控制电极之间的电容具有相同量级而被生成的。如果开关在阻断比较于开关的门控电压相对低的电压，则该电压可能是不好的。然而，当接触电极和梁电极之间的RF电压增加时，更多的电压将跨控制电极被生成，这增加了开关的自激励的风险（其导致MEMS开关的损坏）。As previously discussed, MEMS RF switches are used in wireless devices because of their low power characteristics and ability to operate in the radio frequency range. However, if a conventional three-terminal MEMS switch is provided into the RF blocking path, in the open state of the switch a voltage is generated between the contact electrode and the control electrode. This voltage is generated because the capacitance between the contact electrode and the beam electrode is of the same magnitude as the capacitance between the contact electrode and the control electrode. If the switch is blocking a relatively low voltage compared to the gate voltage of the switch, that voltage may be bad. However, when the RF voltage between the contact electrode and the beam electrode increases, more voltage will be generated across the control electrode, which increases the risk of self-excitation of the switch (which leads to damage of the MEMS switch).
依照本发明的实施例，两个控制电极，即第一控制电极28和第二控制电极30，被耦合来形成门控58。第一控制电极28和第二控制电极30以这样的一种方式来配置，使得当激励电压被施加在门控58和梁电极26之间时，激励电压均等地被施加到第一控制电极28和第二控制电极30。这允许使用相同的门控信号来激励第一梁部分48和第二梁部分50。In accordance with an embodiment of the invention, two control electrodes, first control electrode 28 and second control electrode 30 , are coupled to form gate 58 . The first control electrode 28 and the second control electrode 30 are configured in such a way that when the excitation voltage is applied between the gate 58 and the beam electrode 26, the excitation voltage is equally applied to the first control electrode 28 and the second control electrode 30 . This allows the first beam portion 48 and the second beam portion 50 to be excited using the same gating signal.
参照图3，示出了依照图2的一实施例的包括背对背取向的MEMS开关20。在所示出的实施例中，MEMS开关20具有耦合到接触电极32、34的、被建模为两个三角形66、68（每一个三角形具有三个电容器）的对称安排。三角形66具有指示门控58和第一梁部分48之间的电容的第一电容器70、指示门控58和第一接触电极32之间的电容的第二电容器72、以及指示第一梁部分48和第一接触电极32之间的电容的第三电容器74。三角形68具有指示门控58和第二梁部分50之间的电容的第四电容器76、指示门控58和第二接触电极34之间的电容的第五电容器78、以及指示第二梁部分50和第二接触电极34之间的电容的第六电容器80。Referring to FIG. 3 , there is shown a MEMS switch 20 including a back-to-back orientation in accordance with an embodiment of FIG. 2 . In the illustrated embodiment, the MEMS switch 20 has a symmetrical arrangement modeled as two triangles 66 , 68 (each triangle having three capacitors) coupled to the contact electrodes 32 , 34 . Triangle 66 has a first capacitor 70 indicating capacitance between gate 58 and first beam portion 48, a second capacitor 72 indicating capacitance between gate 58 and first contact electrode 32, and first beam portion 48 and the capacitance between the first contact electrode 32 and the third capacitor 74 . Triangle 68 has a fourth capacitor 76 indicating capacitance between gate 58 and second beam portion 50, a fifth capacitor 78 indicating capacitance between gate 58 and second contact electrode 34, and second beam portion 50 and the sixth capacitor 80 of capacitance between the second contact electrode 34 .
参照图4，MEMS开关20包括依照图2的一实施例的背对背取向。在所示出的实施例中，MEMS开关20具有如图3中所示的类似安排。另外，开关20被建模为具有指示门控58和梁电极26之间的电容的电容器82。Referring to FIG. 4 , MEMS switch 20 includes a back-to-back orientation in accordance with an embodiment of FIG. 2 . In the illustrated embodiment, MEMS switch 20 has a similar arrangement as shown in FIG. 3 . Additionally, the switch 20 is modeled as having a capacitor 82 indicative of the capacitance between the gate 58 and the beam electrode 26 .
如以上所讨论的，当MEMS开关20 处于打开状态（其中第一和第二梁部分48、50分别与第一和第二接触电极32、34分离）中时，射频信号阻断被执行。跨MEMS开关20生成的电压包括高频率信号，这引起在跨MEMS开关20的电容中的每一个的跨电容的电容性耦合。作为结果，在此类配置中，梁电极26处的电压等于跨第一和第二接触电极32、34的电压的一半。倘若所述电容是相等的，门控58处的电压也等于跨第一和第二接触电极32、34的电压的一半。作为此类配置的结果，开关20的自激励被阻止。As discussed above, radio frequency signal blocking is performed when the MEMS switch 20 is in the open state (in which the first and second beam portions 48 , 50 are separated from the first and second contact electrodes 32 , 34 , respectively). The voltage generated across MEMS switch 20 includes high frequency signals, which cause capacitive coupling across each of the capacitances of MEMS switch 20 . As a result, in such a configuration, the voltage at the beam electrode 26 is equal to half the voltage across the first and second contact electrodes 32 , 34 . Provided that the capacitances are equal, the voltage at the gate 58 is also equal to half the voltage across the first and second contact electrodes 32,34. As a result of such configuration, self-excitation of switch 20 is prevented.
MEMS开关20的背对背配置允许在所述两个控制电极28、30（图2中示出的）之间的电通信。在一个实施例中，该电通信经由电阻器来完成，且在其它实施例中，该电通信经由电容器和/或电感器被动地来完成。在某些其它的实施例中，该电通信使用控制逻辑主动地来完成。该电通信造成在所述控制电极双方处相同的电压，且门控处的电压与梁处的电压相同。在其中跨开关20的电容相等的条件下，在梁电极和门控之间生成的电压接近于零，即使是在有充分更高的射频信号存在的情况下。示范MEMS开关20具有大于300伏特的隔绝电压，以便阻止在MEMS开关20处于打开状态中时开关20的自激励。The back-to-back configuration of the MEMS switch 20 allows electrical communication between the two control electrodes 28 , 30 (shown in FIG. 2 ). In one embodiment, the electrical communication is accomplished via a resistor, and in other embodiments, the electrical communication is accomplished passively via a capacitor and/or an inductor. In certain other embodiments, this electrical communication is actively accomplished using control logic. This electrical communication results in the same voltage at both sides of the control electrodes, and the same voltage at the gate as at the beam. Under conditions where the capacitances across switch 20 are equal, the voltage generated between the beam electrodes and the gate is close to zero, even in the presence of substantially higher radio frequency signals. The exemplary MEMS switch 20 has an isolation voltage greater than 300 volts in order to prevent self-excitation of the switch 20 when the MEMS switch 20 is in the open state.
依照本发明的某些实施例，在第一梁部分和第一接触电极之间的，以及在第二梁部分和第二接触电极之间的电容是相同的。在一些实施例中，在第一接触电极和第一控制电极之间的，以及在第二接触电极和第二控制电极之间的电容是相同的。在一具体实施例中，梁和门控之间的电容大于至少两倍的在第一控制电极和第一接触电极之间的电容。According to some embodiments of the invention, the capacitance between the first beam portion and the first contact electrode, and between the second beam portion and the second contact electrode is the same. In some embodiments, the capacitance between the first contact electrode and the first control electrode, and between the second contact electrode and the second control electrode is the same. In a specific embodiment, the capacitance between the beam and the gate is at least twice greater than the capacitance between the first control electrode and the first contact electrode.
开关20的背对背配置的对称性基于开关的组装配置、过程变化性、以及布局。添加到开关的一个或更多元件可生成非对称配置，引起在开关的门控和梁电极之间待被生成的残余电压。在一个实施例中，该残余电压能够在门控和梁电极之间使用电容器被动地被减轻。在另一个实施例中，该残余电压能够使用控制逻辑主动地被减轻。如先前所讨论的，示范开关可包括一个或更多基底。The symmetry of the back-to-back configuration of switches 20 is based on the assembly configuration, process variability, and layout of the switches. One or more elements added to the switch may create an asymmetric configuration, causing a residual voltage to be generated between the gate and beam electrodes of the switch. In one embodiment, this residual voltage can be mitigated passively using capacitors between the gate and beam electrodes. In another embodiment, the residual voltage can be actively mitigated using control logic. As previously discussed, exemplary switches may include one or more substrates.
在一些实施例中，MEMS开关20的寿命可通过提供所述多个电容器与开关20的第一和第二接触电极32、34串联来被提高。这些电容器促进将热开关电压和热开关能量（即，在开关的闭合时传递的总电荷）二者最小化。该实现在开关20被隔离于门控控制逻辑的影响时是特别有优势的。In some embodiments, the lifetime of the MEMS switch 20 can be improved by providing the plurality of capacitors in series with the first and second contact electrodes 32 , 34 of the switch 20 . These capacitors facilitate minimizing both the thermal switch voltage and the thermal switch energy (ie, the total charge transferred upon closure of the switch). This implementation is particularly advantageous when the switch 20 is isolated from the influence of the gating control logic.
图5是示出依照示范实施例的、耦合到彼此的多个MEMS开关20的示意电路图解。在所示出的实施例中，四个MEMS开关20示出为耦合到彼此。示出在顶部的两个MEMS开关20串联耦合到彼此。进一步地，示出在底部的两个MEMS开关20也是串联耦合到彼此。示出在顶部的两个MEMS开关20并联地耦合到示出在底部的那两个MEMS开关20。FIG. 5 is a schematic circuit diagram showing a plurality of MEMS switches 20 coupled to each other in accordance with an exemplary embodiment. In the illustrated embodiment, four MEMS switches 20 are shown coupled to each other. The two MEMS switches 20 shown at the top are coupled in series to each other. Further, the two MEMS switches 20 shown at the bottom are also coupled in series to each other. The two MEMS switches 20 shown at the top are coupled in parallel to the two MEMS switches 20 shown at the bottom.
在其它实施例中，可以变化MEMS开关20的数量以及串联/并联安排。在一个实施例中，多个MEMS开关可以只以串联来耦合。在另一个实施例中，多个MEMS开关可以只以并联来耦合。MEMS开关20的数量可依赖于特定的应用（例如，MEMS开关20操作于其中的环境）而变化。例如，在磁的环境或RF环境中，MEMS开关20的数量可基于电压脉冲效应来确定，使得隔绝电压被克服。特定地，基于RF隔绝电压，MEMS开关20的数量和配置可变化，使得来自RF信号的自激励被阻止。In other embodiments, the number and series/parallel arrangement of MEMS switches 20 may be varied. In one embodiment, multiple MEMS switches may only be coupled in series. In another embodiment, multiple MEMS switches may only be coupled in parallel. The number of MEMS switches 20 may vary depending on the particular application (eg, the environment in which MEMS switches 20 operate). For example, in a magnetic environment or an RF environment, the number of MEMS switches 20 may be determined based on the voltage pulse effect such that the isolation voltage is overcome. Specifically, based on the RF blocking voltage, the number and configuration of MEMS switches 20 can be varied such that self-excitation from RF signals is prevented.
图6是示出依照图5的一示范实施例的、耦合到彼此的多个MEMS开关20的示意电路图解。另外，在所示出的实施例中，两个阻抗装置84、86被耦合到每一个MEMS开关20的第一和第二接触电极32、34。具体地，所述两个阻抗装置84、86是电感器。在另一个实施例中，所述两个阻抗装置可以是电阻器。在其它实施例中，阻抗装置的数量可依赖于应用而变化。所述阻抗装置84、86促进在MEMS开关的开关操作期间将跨第一和第二接触电极32、34的电压最小化。FIG. 6 is a schematic circuit diagram showing a plurality of MEMS switches 20 coupled to each other in accordance with an exemplary embodiment of FIG. 5 . Additionally, in the illustrated embodiment, two impedance devices 84 , 86 are coupled to the first and second contact electrodes 32 , 34 of each MEMS switch 20 . In particular, said two impedance means 84, 86 are inductors. In another embodiment, the two impedance means may be resistors. In other embodiments, the number of impedance devices may vary depending on the application. The impedance means 84, 86 facilitate minimizing the voltage across the first and second contact electrodes 32, 34 during switching operation of the MEMS switch.
图7是示出依照一示范实施例的、串联耦合到彼此的两个MEMS开关20的示意电路图解。在所示出的实施例中，四个阻抗装置84、86、88、90被耦合到每一个MEMS开关20的第一和第二接触电极32、34以及梁24。具体地，所述四个阻抗装置84、86、88、90是电感器。在另一个实施例中，所述四个阻抗装置可以是电阻器。在还有的另一个实施例中，所述四个阻抗装置可以是电容器。在其它实施例中，阻抗装置的数量可依赖于应用而变化。FIG. 7 is a schematic circuit diagram showing two MEMS switches 20 coupled in series to each other, according to an exemplary embodiment. In the illustrated embodiment, four impedance devices 84 , 86 , 88 , 90 are coupled to the first and second contact electrodes 32 , 34 and beam 24 of each MEMS switch 20 . In particular, said four impedance means 84, 86, 88, 90 are inductors. In another embodiment, the four impedance means may be resistors. In yet another embodiment, the four impedance devices may be capacitors. In other embodiments, the number of impedance devices may vary depending on the application.
依照所示出的实施例，在闭合所述多个微机电开关20期间，在梁电极26和第一接触电极32、第二接触电极34之间的电压经由所述阻抗装置84、86、88、90被维持在低于0.5伏特。According to the illustrated embodiment, during closing of the plurality of microelectromechanical switches 20, the voltage between the beam electrode 26 and the first contact electrode 32, the second contact electrode 34 passes through the impedance means 84, 86, 88 , 90 is maintained below 0.5 volts.
图8是示出依照一示范实施例的、串联耦合到彼此的两个MEMS开关20的示意电路图解。在所示出的实施例中，四个阻抗装置84、86、88、90被耦合到每一个MEMS开关20的第一和第二接触电极32、34以及梁24。另外，两个阻抗装置92、94被耦合到每一个MEMS开关的门控58。进一步地，另外两个阻抗装置96、98被耦合到每一个MEMS开关20的梁24。具体地，阻抗装置92、94、96、98是电阻器。在另一个实施例中，所述附加的阻抗装置可以是电容器。在还有的另一个实施例中，所述附加的阻抗装置可以是电感器。在其它实施例中，阻抗装置的数量可依赖于应用而变化。依照所示出的实施例，最左边以及最右边的线（wire）（未示出）被耦合到高电压（例如，1500伏特）、高频率（例如，大于50 MHz）源，例如，磁共振线圈元件。当高电压穿越打开状态中的所述多个开关20时，由于所述多个MEMS开关20的阻抗装置的寄生阻抗，且更具体的是在每一个开关20的梁24和门控58之间的寄生电容，所施加的电压由开关20来分享。FIG. 8 is a schematic circuit diagram showing two MEMS switches 20 coupled in series to each other, according to an exemplary embodiment. In the illustrated embodiment, four impedance devices 84 , 86 , 88 , 90 are coupled to the first and second contact electrodes 32 , 34 and beam 24 of each MEMS switch 20 . In addition, two impedance devices 92, 94 are coupled to the gate 58 of each MEMS switch. Further, two other impedance devices 96 , 98 are coupled to the beam 24 of each MEMS switch 20 . In particular, the impedance means 92, 94, 96, 98 are resistors. In another embodiment, the additional impedance means may be a capacitor. In yet another embodiment, the additional impedance means may be an inductor. In other embodiments, the number of impedance devices may vary depending on the application. In accordance with the illustrated embodiment, the leftmost and rightmost wires (not shown) are coupled to a high voltage (eg, 1500 volts), high frequency (eg, greater than 50 MHz) source, eg, magnetic resonance Coil components. When a high voltage traverses the plurality of switches 20 in the open state, due to the parasitic impedance of the impedance device of the plurality of MEMS switches 20 , and more specifically between the beam 24 and the gate 58 of each switch 20 The parasitic capacitance of , the applied voltage is shared by the switch 20 .
依照本发明的实施例，在所述多个微机电开关之间分享激励电压期间，梁电极26和门控58之间的电压经由阻抗装置92、94、96、98被维持低于10伏特。当电压在梁电极和门控之间被建立时，开关的隔绝容量被降低。此类电压是由于开关的寄生电容（从梁电极到门控）而被建立的。因为在开关的所述多个门控之间的阻抗开始影响开关的性能，故所建立的电压在一系列MEMS开关被耦合到彼此时开始失效（break down）。例如，对于耦合到彼此的多个开关，如果中央MEMS开关的门控线路和最左边的MEMS开关之间的阻抗较小，则该最左边的开关的门控电压朝向中央MEMS开关的梁电压移动，从而引起隔绝电压中的降低。依照本发明的实施例，当阻抗被添加在门控之间时，此类电压移动降低。门控之间的阻抗的大小是基于每一个MEMS开关的门控和梁电极之间的电容来被决定的。According to an embodiment of the present invention, the voltage between the beam electrode 26 and the gate 58 is maintained below 10 volts via the impedance means 92, 94, 96, 98 during sharing of the excitation voltage between the plurality of MEMS switches. When a voltage is established between the beam electrodes and the gate, the isolation capacity of the switch is reduced. Such voltages are built up due to the parasitic capacitance of the switches (from beam electrodes to gates). As the impedance between the gates of the switch starts to affect the performance of the switch, the voltage built up starts to break down when a series of MEMS switches are coupled to each other. For example, with multiple switches coupled to each other, if there is less impedance between the gate line of the central MEMS switch and the leftmost MEMS switch, the gate voltage of the leftmost switch moves toward the beam voltage of the central MEMS switch , causing a drop in the isolation voltage. According to embodiments of the present invention, such voltage shifts are reduced when impedance is added between the gates. The magnitude of the impedance between the gates is determined based on the capacitance between the gate and beam electrodes of each MEMS switch.
如先前所讨论的，在磁共振线圈内生成的电压可能若干倍于背对背MEMS开关的电压容量。依照图5-8的实施例，所述多个MEMS开关20配置成分享跨所述多个MEMS开关20的施加电压、阻止从第一和第二接触电极32、34到门控58的过度电压耦合、以及维持跨接触电极32、34的低电压（在开关操作期间）。在一个实施例中，所述多个MEMS开关20配置成均等地分享跨所述多个MEMS开关20的施加电压。在一个具体实施例中，所述多个MEMS开关20配置成经由所述多个门控58来控制在所述多个MEMS开关之间的电压耦合。所述多个阻抗装置促进修改所述多个微机电开关20周围的外部刺激的影响。As previously discussed, the voltage generated within the magnetic resonance coil may be several times the voltage capacity of the back-to-back MEMS switches. 5-8, the plurality of MEMS switches 20 are configured to share the applied voltage across the plurality of MEMS switches 20, preventing excessive voltage from the first and second contact electrodes 32, 34 to the gate 58. coupling, and maintaining a low voltage across the contact electrodes 32, 34 (during switching operation). In one embodiment, the plurality of MEMS switches 20 is configured to equally share the applied voltage across the plurality of MEMS switches 20 . In a particular embodiment, the plurality of MEMS switches 20 are configured to control voltage coupling between the plurality of MEMS switches via the plurality of gates 58 . The plurality of impedance devices facilitate modifying the effects of external stimuli around the plurality of microelectromechanical switches 20 .
在本文中应当注意到的是，MEMS开关的寿命可基于在MEMS开关处于闭合状态中时，跨接触电极所生成的残余电压的量。此类电压可通常被称作为“热开关电压”。热开关电压可基于来自系统的残余电压，以及还可基于从门控线路到接触电极的耦合能量来被生成。接触电极上的该残余电压是由于门控和接触电极之间的寄生电容。在其中RF电压在激励开关之前被移除的应用中，由于低的打开状态电容以及低的漏电流，故可能有残余的低频率的或DC电压仍然跨开关保持。依照本发明的实施例，此类效应通过在每一个开关中允许接触电极和梁电极之间的电通信来被减轻。该电通信能够经由阻抗装置（诸如，电阻器、电感器、电容器、或诸如此类）来完成。此类电通信允许信号的低频率分量穿过打开的开关，同时维持要求的高频率阻断。在一些实施例中，单个门控被用来激励串联的开关20的阵列，这允许在不增加对于额外的门控的需要的情况下来加倍门控电压。It should be noted herein that the lifetime of a MEMS switch may be based on the amount of residual voltage generated across the contact electrodes while the MEMS switch is in the closed state. Such voltages may generally be referred to as "thermal switching voltages". The thermal switching voltage can be generated based on the residual voltage from the system, and also based on the coupled energy from the gating line to the contact electrodes. This residual voltage on the contact electrodes is due to the parasitic capacitance between the gating and contact electrodes. In applications where the RF voltage is removed prior to energizing the switch, there may be residual low frequency or DC voltage still maintained across the switch due to the low on-state capacitance and low leakage current. According to an embodiment of the invention, such effects are mitigated by allowing electrical communication between the contact electrodes and the beam electrodes in each switch. This electrical communication can be accomplished via an impedance device such as a resistor, inductor, capacitor, or the like. Such electrical communication allows the low frequency components of the signal to pass through the open switch while maintaining the required high frequency blocking. In some embodiments, a single gate is used to activate an array of switches 20 connected in series, which allows doubling of the gate voltage without increasing the need for additional gates.
尽管本发明的仅某些特征已在本文中被示出和描述，但本领域中的那些技术人员将想到许多修改和改变。因此，要被理解的是，随附权利要求旨在覆盖落入本发明的真正精神内的所有此类修改和改变。While only certain features of the invention have been shown and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/314,344US9117610B2 (en) | 2011-11-30 | 2014-06-25 | Integrated micro-electromechanical switches and a related method thereof |
| US14/314344 | 2014-06-25 | ||
| PCT/US2015/037155WO2015200307A2 (en) | 2014-06-25 | 2015-06-23 | Integrated micro-electromechanical switches and a related method thereof |
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| CN106415772Atrue CN106415772A (en) | 2017-02-15 |
| CN106415772B CN106415772B (en) | 2019-08-13 |
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| CN201580034300.4AActiveCN106415772B (en) | 2014-06-25 | 2015-06-23 | Integrated microelectromechanical switches and related methods |
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| JP (1) | JP6781048B2 (en) |
| CN (1) | CN106415772B (en) |
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