技术领域technical field
本发明涉及敏感元器件的传感器领域，具体涉及一种制造具有参考电容的传感器的方法。The invention relates to the sensor field of sensitive components, in particular to a method for manufacturing a sensor with a reference capacitance.
背景技术Background technique
光敏传感器中最简单的电子器件是光敏电阻，它能感应光线的明暗变化，输出微弱的电信号，通过简单电子线路放大处理，可以控制LED灯具的自动开关。因此在自动控制、家用电器中得到广泛的应用，对于远程的照明灯具，例如：在电视机中作亮度自动调节，照相机种作自动曝光；另外，在路灯、航标等自动控制电路、卷带自停装置及防盗报警装置中等。The simplest electronic device in the photosensitive sensor is the photoresistor, which can sense the light and dark changes of the light, output a weak electrical signal, and control the automatic switch of the LED lamp through simple electronic circuit amplification. Therefore, it is widely used in automatic control and household appliances. For remote lighting fixtures, such as: automatic brightness adjustment in TVs, automatic exposure in cameras; The stop device and the anti-theft alarm device are medium.
光敏传感器是最常见的传感器之一，它的种类繁多，主要有：光电管、光电倍增管、光敏电阻、光敏三极管、太阳能电池、红外线传感器、紫外线传感器、光纤式光电传感器、色彩传感器、CCD和CMOS图像传感器等。国内主要厂商有OTRON品牌等。光传感器是目前产量最多、应用最广的传感器之一，它在自动控制和非电量电测技术中占有非常重要的地位。最简单的光敏传感器是光敏电阻，当光子冲击接合处就会产生电流。Photosensitive sensor is one of the most common sensors. It has a wide variety, mainly including: photocell, photomultiplier tube, photoresistor, phototransistor, solar cell, infrared sensor, ultraviolet sensor, fiber optic photoelectric sensor, color sensor, CCD and CMOS image sensor, etc. Major domestic manufacturers include OTRON brand and so on. Optical sensor is one of the sensors with the largest output and widest application at present, and it occupies a very important position in automatic control and non-electrical measurement technology. The simplest light-sensitive sensor is a photoresistor, which generates a current when a photon hits the junction.
图1为一种常见的图像传感器的结构示意图，其包括具有半导体元件11的衬底12，在半导体元件周围具有间隔件14（Spacer），封装玻璃板13通过粘结层固定在间隔件14上。该传感器只能对正面的光进行感测，而无法对其背面的光进行感测，限制了传感器的应用范围。随着超大规模集成电路对高集成度和高性能的需求逐渐提高，如何实现传感器的双面感测，并保证传感器的尺寸小型化是本领域技术人员亟待解决的问题。此外，对于传感器而言，一般会使用一个参考电容进行参照，以得到准确的感测结果，然而电容在厚度方向上的叠加，大大增加了传感器的厚度。FIG. 1 is a schematic structural diagram of a common image sensor, which includes a substrate 12 with a semiconductor element 11, a spacer 14 (Spacer) around the semiconductor element, and a packaging glass plate 13 fixed on the spacer 14 through an adhesive layer. . The sensor can only sense the light on the front side, but cannot sense the light on the back side, which limits the application range of the sensor. With the gradual increase of VLSI requirements for high integration and high performance, how to realize the double-sided sensing of sensors and ensure the miniaturization of sensors is an urgent problem to be solved by those skilled in the art. In addition, for sensors, a reference capacitor is generally used for reference to obtain accurate sensing results, but the superposition of capacitors in the thickness direction greatly increases the thickness of the sensor.
发明内容Contents of the invention
基于解决上述问题，本发明提供了一种制造具有参考电容的传感器的方法，包括以下步骤：Based on solving the above problems, the present invention provides a method for manufacturing a sensor with a reference capacitance, comprising the following steps:
（1）提供第一衬底，所述第一衬底包括具有第一光接收区的正面和与所述正面相对的背面；(1) providing a first substrate including a front surface having a first light receiving region and a rear surface opposite to the front surface;
（2）所述第一衬底的背面制作凹槽，所述凹槽深度小于或等于所述第一衬底的厚度的一半；(2) Grooves are made on the back of the first substrate, and the depth of the grooves is less than or equal to half the thickness of the first substrate;
（3）提供第二衬底，并将所述第二衬底固定于所述凹槽内，所述第二衬底包括具有第二光接收区的正面和与所述正面相对的背面，所述第二衬底的正面与所述第一衬底的背面共面；(3) A second substrate is provided, and the second substrate is fixed in the groove, the second substrate includes a front surface having a second light-receiving region and a back surface opposite to the front surface, so The front side of the second substrate is coplanar with the back side of the first substrate;
（4）制作一垂直电容器，所述电容器平行于所述第一衬底的侧面，所述电容器由绝缘材料包覆。(4) Fabricate a vertical capacitor, the capacitor is parallel to the side surface of the first substrate, and the capacitor is covered by an insulating material.
根据本发明的实施例，还包括在所述第一衬底的正面上通过第一感光树脂层粘合第一滤光玻璃片。According to an embodiment of the present invention, it further includes bonding a first filter glass on the front surface of the first substrate through a first photosensitive resin layer.
根据本发明的实施例，还包括在所述第二衬底的正面和第一衬底的背面上设置第二感光树脂层。According to an embodiment of the present invention, further comprising disposing a second photosensitive resin layer on the front side of the second substrate and the back side of the first substrate.
根据本发明的实施例，还包括光照固化所述第一和第二感光树脂层。According to an embodiment of the present invention, further comprising light curing the first and second photosensitive resin layers.
根据本发明的实施例，还包括制作第一导电通孔和第二导电通孔，第一导电通孔电连接在所述第一衬底的正面上的多个第一焊盘并穿过所述第一衬底和第二感光树脂层，第二导电通孔电连接在所述第二衬底的正面上的多个第二焊盘并穿过所述第二感光树脂层。According to an embodiment of the present invention, it also includes making a first conductive via hole and a second conductive via hole, the first conductive via hole is electrically connected to a plurality of first pads on the front surface of the first substrate and passes through all The first substrate and the second photosensitive resin layer, the second conductive vias are electrically connected to a plurality of second pads on the front surface of the second substrate and pass through the second photosensitive resin layer.
根据本发明的实施例，还包括将所述第一导电通孔和第二导电通孔通过焊球与第二滤光玻璃片的导电图案电连接，将与所述电容器的两个电极板电连接的第三导电通孔通过焊球与所述第二滤光玻璃片的导电图案电连接，并在第二感光树脂层和第二滤光玻璃片之间、绝缘材料与和第二滤光玻璃片之间填充透明填充层。According to an embodiment of the present invention, it also includes electrically connecting the first conductive via hole and the second conductive via hole to the conductive pattern of the second filter glass through solder balls, and electrically connecting the two electrode plates of the capacitor. The connected third conductive vias are electrically connected to the conductive pattern of the second filter glass through solder balls, and between the second photosensitive resin layer and the second filter glass, the insulating material and the second filter A transparent filling layer is filled between the glass sheets.
根据本发明的实施例，所述电容器包括平行于所述第一衬底的侧面的第一电极板、高介电材料层和第二电极板。According to an embodiment of the present invention, the capacitor includes a first electrode plate parallel to a side surface of the first substrate, a high dielectric material layer and a second electrode plate.
根据本发明的实施例，所述绝缘材料为二氧化硅。According to an embodiment of the present invention, the insulating material is silicon dioxide.
根据本发明的实施例，所述第一感光树脂层和第二感光树脂层为感光环氧树脂。According to an embodiment of the present invention, the first photosensitive resin layer and the second photosensitive resin layer are photosensitive epoxy resin.
根据本发明的实施例，所述第二衬底通过粘合胶固定在所述凹槽底部。According to an embodiment of the present invention, the second substrate is fixed on the bottom of the groove by adhesive.
本发明的技术方案，具有如下优点：The technical solution of the present invention has the following advantages:
（1）采用嵌入的第二衬底实现双面传感器的同时，保证器件的薄型化；(1) Using the embedded second substrate to realize the double-sided sensor while ensuring the thinning of the device;
（2）采用纵向电容器结构，而非采用横向电容器结构，大大减小传感器的厚度；(2) Using a vertical capacitor structure instead of a horizontal capacitor structure greatly reduces the thickness of the sensor;
（3）第二滤光玻璃片上具有导电图案，既有滤光保护的作用，也用作导电基板，保证薄型化，省去了电路板。(3) There is a conductive pattern on the second filter glass, which not only has the function of filtering and protecting, but also serves as a conductive substrate to ensure thinning and save the circuit board.
附图说明Description of drawings
图1为现有技术的图像传感器的剖面图；1 is a cross-sectional view of an image sensor in the prior art;
图2为本发明的具有参考电容的传感器的剖面图；Fig. 2 is the sectional view of the sensor with reference capacitance of the present invention;
图3-8为本发明制造具有参考电容传感器的方法的流程示意图；Fig. 3-8 is the schematic flow chart of the method for manufacturing the capacitive sensor with reference in the present invention;
图9-13为本发明制造电容的具体流程示意图。9-13 are schematic diagrams of specific flow charts for manufacturing capacitors according to the present invention.
具体实施方式Detailed ways
参见图2-8，一种具有参考电容的传感器件2，包括：Referring to Fig. 2-8, a sensing device 2 with a reference capacitance includes:
第一衬底21a，其可以是硅衬底，在其上形成电子元件（半导体元件），所述第一衬底21a包括具有第一半导体元件22a的正面和与所述正面相对的背面；A first substrate 21a, which may be a silicon substrate, on which electronic elements (semiconductor elements) are formed, said first substrate 21a comprising a front surface having a first semiconductor element 22a and a back surface opposite to said front surface;
在所述第一衬底21a的背面的凹槽25，所述凹槽25深度小于或等于所述第一衬底的厚度的一半，所述凹槽25底部应远离所述第一半导体元件22a；The groove 25 on the back side of the first substrate 21a, the depth of the groove 25 is less than or equal to half of the thickness of the first substrate, and the bottom of the groove 25 should be far away from the first semiconductor element 22a ;
固定于所述凹槽25底部的第二衬底21b，所述第二衬底21b包括具有第二半导体元件22b的正面和与所述正面相对的背面，所述第二衬底21b的正面与所述第一衬底21a的背面共面；The second substrate 21b fixed on the bottom of the groove 25, the second substrate 21b includes a front with the second semiconductor element 22b and a back opposite to the front, the front of the second substrate 21b is in contact with the front The back side of the first substrate 21a is coplanar;
平行于所述第一衬底21a的侧面的电容器，所述电容器由绝缘材料34包覆，所述绝缘材料为二氧化硅。The capacitor parallel to the side surface of the first substrate 21 a is covered by an insulating material 34 , and the insulating material is silicon dioxide.
在所述第一衬底21a的正面上具有通过第一感光树脂层28a粘合的第一滤光玻璃片24a，所述第一滤光玻璃片24a可以是具有固定波长截止膜的玻璃片。On the front side of the first substrate 21a, there is a first filter glass piece 24a bonded by a first photosensitive resin layer 28a, and the first filter glass piece 24a may be a glass piece with a fixed wavelength cut-off film.
在所述第二衬底21b的正面和第一衬底21a的背面上具有通过第二感光树脂层28b、透明填充层29粘合的第二滤光玻璃片24b，所述透明填充层可以是透明硅胶或环氧树脂。On the front side of the second substrate 21b and the back side of the first substrate 21a, there is a second filter glass 24b bonded by a second photosensitive resin layer 28b and a transparent filling layer 29, and the transparent filling layer can be Clear silicone or epoxy.
所述电容器包括第一电极板33、高介电材料层32和第二电极板31，所述第一电极板33和第二电极板31通过第三导电通孔27c、和焊球30c与第二滤光玻璃片24b的导电图案电连接。The capacitor includes a first electrode plate 33, a high dielectric material layer 32 and a second electrode plate 31, and the first electrode plate 33 and the second electrode plate 31 are connected to the first electrode plate 33 and the second electrode plate 31 through the third conductive via 27c and the solder ball 30c. The conductive patterns of the two filter glass pieces 24b are electrically connected.
在所述第一衬底21a的正面上具有多个第一焊盘23a，在所述第二衬底21b的正面上具有多个第二焊盘23b。There are a plurality of first pads 23a on the front surface of the first substrate 21a, and a plurality of second pads 23b on the front surface of the second substrate 21b.
还包括电连接所述第一焊盘23a的、穿过所述第一衬底21a和第二感光树脂层28b的第一导电通孔27a，以及电连接所述第二焊盘23b的、穿过所述第二感光树脂层28b的第二导电通孔27b。It also includes a first conductive via 27a electrically connected to the first pad 23a, passing through the first substrate 21a and the second photosensitive resin layer 28b, and a through hole electrically connected to the second pad 23b. through the second conductive via hole 27b of the second photosensitive resin layer 28b.
所述第一导电通孔27a和第二导电通孔27b分别通过第一焊球30a和第二焊球30b与所述第二滤光玻璃片24b的导电图案电连接。The first conductive via hole 27a and the second conductive via hole 27b are electrically connected to the conductive pattern of the second filter glass 24b through the first solder ball 30a and the second solder ball 30b respectively.
根据该实施例，所述第一感光树脂层28a和第二感光树脂层28b为感光环氧树脂。According to this embodiment, the first photosensitive resin layer 28a and the second photosensitive resin layer 28b are photosensitive epoxy resin.
根据该实施例，所述第二衬底21b通过粘合胶26固定在所述凹槽25底部。According to this embodiment, the second substrate 21b is fixed on the bottom of the groove 25 by an adhesive 26 .
根据该实施例，所述凹槽25内填充有封装树脂以环绕所述第二衬底21b的侧面。According to this embodiment, the cavity 25 is filled with encapsulation resin to surround the side of the second substrate 21b.
由此，本发明提供了一种制造具有参考电容的传感器的方法，包括以下步骤：Thus, the present invention provides a method of manufacturing a sensor with a reference capacitance, comprising the steps of:
（1）参考图3，提供第一衬底，所述第一衬底包括具有第一光接收区的正面和与所述正面相对的背面；(1) Referring to FIG. 3 , a first substrate is provided, and the first substrate includes a front surface having a first light receiving region and a back surface opposite to the front surface;
（2）所述第一衬底的背面制作凹槽，所述凹槽深度小于或等于所述第一衬底的厚度的一半；(2) Grooves are made on the back of the first substrate, and the depth of the grooves is less than or equal to half the thickness of the first substrate;
（3）参考图4，提供第二衬底，并将所述第二衬底固定于所述凹槽内，所述第二衬底包括具有第二光接收区的正面和与所述正面相对的背面，所述第二衬底的正面与所述第一衬底的背面共面；(3) Referring to FIG. 4 , a second substrate is provided, and the second substrate is fixed in the groove, the second substrate includes a front surface having a second light-receiving area and a surface opposite to the front surface the back side of the second substrate, the front side of the second substrate is coplanar with the back side of the first substrate;
（4）参考图5，在所述第一衬底的正面上通过第一感光树脂层粘合第一滤光玻璃片；在所述第二衬底的正面和第一衬底的背面上设置第二感光树脂层；光照固化所述第一和第二感光树脂层。(4) Referring to FIG. 5 , the first filter glass is bonded on the front of the first substrate through the first photosensitive resin layer; the front of the second substrate and the back of the first substrate are arranged The second photosensitive resin layer; light curing the first and second photosensitive resin layers.
（5）参考图6，制作第一导电通孔和第二导电通孔，第一导电通孔电连接在所述第一衬底的正面上的多个第一焊盘并穿过所述第一衬底和第二感光树脂层，第二导电通孔电连接在所述第二衬底的正面上的多个第二焊盘并穿过所述第二感光树脂层。(5) Referring to FIG. 6 , making a first conductive via and a second conductive via, the first conductive via is electrically connected to a plurality of first pads on the front surface of the first substrate and passes through the first conductive via A substrate and a second photosensitive resin layer, and the second conductive vias are electrically connected to a plurality of second pads on the front surface of the second substrate and pass through the second photosensitive resin layer.
（6）参考图7，制作一垂直电容器，所述电容器平行于所述第一衬底的侧面40，所述电容器由绝缘材料包覆。(6) Referring to FIG. 7 , a vertical capacitor is fabricated, the capacitor is parallel to the side surface 40 of the first substrate, and the capacitor is covered by an insulating material.
（7）参考图8，将所述第一导电通孔和第二导电通孔通过焊球与第二滤光玻璃片的导电图案电连接，将与所述电容器的两个电极板电连接的第三导电通孔通过焊球与所述第二滤光玻璃片的导电图案电连接，并在第二感光树脂层和第二滤光玻璃片之间、绝缘材料与和第二滤光玻璃片之间填充透明填充层。(7) Referring to FIG. 8, the first conductive via hole and the second conductive via hole are electrically connected to the conductive pattern of the second filter glass through solder balls, and the two electrode plates of the capacitor are electrically connected to each other. The third conductive via hole is electrically connected to the conductive pattern of the second filter glass sheet through solder balls, and between the second photosensitive resin layer and the second filter glass sheet, the insulating material and the second filter glass sheet Fill with a transparent fill layer in between.
其中，所述电容器包括平行于所述第一衬底的侧面的第一电极板、高介电材料层和第二电极板。所述绝缘材料为二氧化硅。所述第一感光树脂层和第二感光树脂层为感光环氧树脂。所述第二衬底通过粘合胶固定在所述凹槽底部。Wherein, the capacitor includes a first electrode plate parallel to the side of the first substrate, a high dielectric material layer and a second electrode plate. The insulating material is silicon dioxide. The first photosensitive resin layer and the second photosensitive resin layer are photosensitive epoxy resin. The second substrate is fixed on the bottom of the groove by glue.
参考图9-13，是本发明制造电容器的具体步骤：Referring to Fig. 9-13, it is the specific steps of the present invention to manufacture capacitors:
参考图9，在第一衬底侧面40形成绝缘材料层41，并在平行于侧面40的方向上形成两个深度不同的水平通孔；Referring to FIG. 9, an insulating material layer 41 is formed on the side 40 of the first substrate, and two horizontal through holes with different depths are formed in a direction parallel to the side 40;
参考图10，在垂直于侧面40的方向上形成两个分别连接上述水平通孔的垂直通孔；Referring to FIG. 10 , two vertical through holes respectively connected to the above horizontal through holes are formed in a direction perpendicular to the side surface 40;
参考图11，刻蚀或机械加工出一阶梯结构，两个垂直通孔位于不同的台阶上；Referring to FIG. 11, a stepped structure is etched or machined, and two vertical through holes are located on different steps;
参考图12，分别形成第一电极板、高介电材料层和第二电极板；Referring to FIG. 12 , respectively form a first electrode plate, a high dielectric material layer and a second electrode plate;
参考图13，覆盖绝缘材料，并经过研磨抛光最终形成电容器。Referring to FIG. 13 , the insulating material is covered and ground and polished to finally form a capacitor.
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。Finally, it should be noted that obviously, the above-mentioned embodiments are only examples for clearly illustrating the present invention, rather than limiting the implementation. For those of ordinary skill in the art, on the basis of the above description, other changes or changes in different forms can also be made. It is not necessary and impossible to exhaustively list all the implementation manners here. However, the obvious changes or variations derived therefrom are still within the protection scope of the present invention.
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| CN201611045264.4ACN106409856B (en) | 2016-11-24 | 2016-11-24 | A method of manufacturing a sensor with a reference capacitance |
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| CN201611045264.4ACN106409856B (en) | 2016-11-24 | 2016-11-24 | A method of manufacturing a sensor with a reference capacitance |
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| CN201611045264.4AActiveCN106409856B (en) | 2016-11-24 | 2016-11-24 | A method of manufacturing a sensor with a reference capacitance |
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