技术领域technical field
本发明涉及一种存储器管理方法，且特别涉及一种存储器管理方法、存储器储存装置及存储器控制电路单元。The invention relates to a memory management method, and in particular to a memory management method, a memory storage device and a memory control circuit unit.
背景技术Background technique
数码相机、移动电话与MP3播放器在这几年来的成长十分迅速，使得消费者对储存媒体的需求也急速增加。由于可复写式非易失性存储器模块(例如，快闪存储器)具有数据非易失性、省电、体积小，以及无机械结构等特性，所以非常适合内建于上述所举例的各种便携式多媒体装置中。Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since the rewritable non-volatile memory module (for example, flash memory) has the characteristics of data non-volatility, power saving, small size, and no mechanical structure, it is very suitable for being built in various portable devices such as the above examples. in the multimedia device.
一般来说，在使用可复写式非易失性存储器模块一段时间之后，可复写式非易失性存储器模块中的某些实体区块可能会损坏。造成损坏的原因可能是硬体毁损或储存于其中的数据的错误率过高等等。一般对于损坏的实体区块的处理方式是以某些备援的实体区块来替换此损坏的实体区块。但是，若可复写式非易失性存储器模块中损坏的实体区块太多导致备援的实体区块不足，则此可复写式非易失性存储器模块就难以再继续使用。Generally speaking, after using the rewritable nonvolatile memory module for a period of time, some physical blocks in the rewritable nonvolatile memory module may be damaged. The cause of the damage may be that the hardware is damaged or the error rate of the data stored therein is too high, and so on. A general processing method for a damaged physical block is to replace the damaged physical block with some spare physical blocks. However, if too many damaged physical blocks in the rewritable non-volatile memory module result in insufficient spare physical blocks, the rewritable non-volatile memory module is difficult to continue to use.
发明内容Contents of the invention
本发明提供一种存储器管理方法、存储器储存装置及存储器控制电路单元，可藉由调整可复写式非易失性存储器模块的可用容量来延长存储器储存装置的使用寿命。The invention provides a memory management method, a memory storage device and a memory control circuit unit, which can prolong the service life of the memory storage device by adjusting the available capacity of the rewritable non-volatile memory module.
本发明的一范例实施例提供一种存储器管理方法，其用于控制可复写式非易失性存储器模块，所述存储器管理方法包括：检测所述可复写式非易失性存储器模块的替换实体单元数目，其中所述替换实体单元数目与所述可复写式非易失性存储器模块中的至少一替换实体单元的数目有关，每一所述替换实体单元用以替换所述可复写式非易失性存储器模块中的一损坏实体单元；以及若所述可复写式非易失性存储器模块的所述替换实体单元数目符合预设条件，将所述可复写式非易失性存储器模块的可用容量从第一可用容量调整为第二可用容量，其中所述可用容量是指所述可复写式非易失性存储器模块中的多个可用实体单元的容量总和，每一所述可用实体单元皆不属于所述替换实体单元。An exemplary embodiment of the present invention provides a memory management method for controlling a rewritable nonvolatile memory module, the memory management method comprising: detecting a replacement entity of the rewritable nonvolatile memory module The number of units, wherein the number of replacement physical units is related to the number of at least one replacement physical unit in the rewritable non-volatile memory module, and each of the replacement physical units is used to replace the rewritable non-volatile memory module A damaged physical unit in the volatile memory module; and if the number of the replacement physical units of the rewritable nonvolatile memory module meets a preset condition, the usable The capacity is adjusted from the first available capacity to the second available capacity, wherein the available capacity refers to the sum of the capacities of multiple available physical units in the rewritable non-volatile memory module, and each of the available physical units is Not part of the replacement entity element.
在本发明的一范例实施例中，所述第二可用容量小于所述第一可用容量。In an exemplary embodiment of the present invention, the second available capacity is smaller than the first available capacity.
在本发明的一范例实施例中，所述存储器管理方法还包括：在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之前，提供与所述可复写式非易失性存储器模块的所述第一可用容量有关的第一容量信息给所述主机系统；以及在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之后，提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的第二容量信息给所述主机系统。In an exemplary embodiment of the present invention, the memory management method further includes: before detecting that the number of replacement physical units of the rewritable non-volatile memory module meets the preset condition, providing first capacity information related to the first available capacity of the rewritable non-volatile memory module to the host system; and upon detecting the replacement physical unit of the rewritable non-volatile memory module After the number meets the preset condition, second capacity information related to the second available capacity of the rewritable non-volatile memory module is provided to the host system.
在本发明的一范例实施例中，所述存储器管理方法还包括：若所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件，不将所述可复写式非易失性存储器模块宣告为写入保护状态。In an exemplary embodiment of the present invention, the memory management method further includes: if the number of replacement physical units of the rewritable non-volatile memory module meets the preset condition, not rewriting the rewritable non-volatile memory module The non-volatile memory module is declared as write-protected.
在本发明的一范例实施例中，在提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的所述第二容量信息给所述主机系统的步骤之前，所述存储器管理方法还包括：重新将所述可复写式非易失性存储器模块上电，或者执行断电上电模拟操作。In an exemplary embodiment of the present invention, before the step of providing the second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system, the The memory management method further includes: re-powering on the rewritable non-volatile memory module, or performing a power-off and power-on simulation operation.
在本发明的一范例实施例中，所述存储器管理方法还包括：根据所述替换实体单元数目判断所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目是否符合预设数目；以及若所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目符合所述预设数目，判定所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件。In an exemplary embodiment of the present invention, the memory management method further includes: judging according to the number of replacement physical units whether the number of the replacement physical units in the rewritable non-volatile memory module complies with a preset number; and if the number of the replacement physical units in the rewritable nonvolatile memory module complies with the preset number, determining that the rewritable nonvolatile memory module The number of replacement solid units meets the preset conditions.
在本发明的一范例实施例中，将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的步骤包括：从所述可复写式非易失性存储器模块的所述可用实体单元中选择至少其中之一；以及将所选择的可用实体单元关联为所述替换实体单元。In an exemplary embodiment of the present invention, the step of adjusting the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity includes: Selecting at least one of the available physical units of the rewritable non-volatile memory module; and associating the selected available physical unit as the replacement physical unit.
在本发明的一范例实施例中，将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的步骤包括：接收第一操作指令；根据所述第一操作指令将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量；以及回复对应于所述第一操作指令的操作失败消息。In an exemplary embodiment of the present invention, the step of adjusting the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity includes: receiving a first operation instruction; adjust the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity according to the first operation instruction; and reply corresponding to the first The operation failure message for the operation instruction.
在本发明的一范例实施例中，所述存储器管理方法还包括：提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的第二容量信息给所述主机系统；接收第二操作指令；以及根据所述第二操作指令，发送格式化操作指令序列以指示格式化所述可复写式非易失性存储器模块，其中格式化后的所述可复写式非易失性存储器模块具有所述第二可用容量。In an exemplary embodiment of the present invention, the memory management method further includes: providing second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system; receiving a second operation instruction; and according to the second operation instruction, sending a format operation instruction sequence to instruct to format the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module after formatting A permanent memory module has said second available capacity.
本发明的另一范例实施例提供一种存储器储存装置，其包括连接接口单元、可复写式非易失性存储器模块及存储器控制电路单元。所述连接接口单元用以电性连接至主机系统。所述存储器控制电路单元电性连接至所述连接接口单元与所述可复写式非易失性存储器模块。所述存储器控制电路单元用以检测所述可复写式非易失性存储器模块的替换实体单元数目。所述替换实体单元数目与所述可复写式非易失性存储器模块中的至少一替换实体单元的数目有关。每一所述替换实体单元用以替换所述可复写式非易失性存储器模块中的损坏实体单元。若所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件，所述存储器控制电路单元还用以将所述可复写式非易失性存储器模块的可用容量从第一可用容量调整为第二可用容量。所述可用容量是指所述可复写式非易失性存储器模块中的多个可用实体单元的容量总和。每一所述可用实体单元皆不属于所述替换实体单元。Another exemplary embodiment of the present invention provides a memory storage device, which includes a connection interface unit, a rewritable non-volatile memory module, and a memory control circuit unit. The connection interface unit is used to electrically connect to the host system. The memory control circuit unit is electrically connected to the connection interface unit and the rewritable non-volatile memory module. The memory control circuit unit is used for detecting the number of replacement physical units of the rewritable non-volatile memory module. The number of replacement physical units is related to the number of at least one replacement physical unit in the rewritable non-volatile memory module. Each of the replacement physical units is used to replace a damaged physical unit in the rewritable non-volatile memory module. If the number of the replacement physical units of the rewritable nonvolatile memory module meets the preset condition, the memory control circuit unit is also used to use the available capacity of the rewritable nonvolatile memory module Adjust from the first usable capacity to the second usable capacity. The available capacity refers to the sum of capacities of multiple available physical units in the rewritable non-volatile memory module. Each of the available physical units does not belong to the replacement physical unit.
在本发明的一范例实施例中，所述第二可用容量小于所述第一可用容量。In an exemplary embodiment of the present invention, the second available capacity is smaller than the first available capacity.
在本发明的一范例实施例中，在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之前，所述存储器控制电路单元还用以提供与所述可复写式非易失性存储器模块的所述第一可用容量有关的第一容量信息给所述主机系统。在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之后，所述存储器控制电路单元还用以提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的一第二容量信息给所述主机系统。In an exemplary embodiment of the present invention, before detecting that the number of replacement physical units of the rewritable non-volatile memory module meets the preset condition, the memory control circuit unit is also used to provide The first capacity information related to the first available capacity of the rewritable non-volatile memory module is sent to the host system. After detecting that the number of replacement physical units of the rewritable nonvolatile memory module complies with the preset condition, the memory control circuit unit is also used to provide the rewritable nonvolatile memory A second capacity information related to the second available capacity of the module is sent to the host system.
在本发明的一范例实施例中，若所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件，所述存储器控制电路单元还用以不将所述可复写式非易失性存储器模块宣告为写入保护状态。In an exemplary embodiment of the present invention, if the number of the replacement physical units of the rewritable non-volatile memory module meets the preset condition, the memory control circuit unit is also configured not to The write-protected non-volatile memory module is declared as write-protected.
在本发明的一范例实施例中，在提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的所述第二容量信息给所述主机系统之前，所述存储器控制电路单元还用以重新将所述可复写式非易失性存储器模块上电，或者执行断电上电模拟操作。In an exemplary embodiment of the present invention, before providing the second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system, the memory control The circuit unit is also used to re-power on the rewritable non-volatile memory module, or perform a power-off and power-on simulation operation.
在本发明的一范例实施例中，所述存储器控制电路单元还用以根据所述替换实体单元数目判断所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目是否符合预设数目。若所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目符合所述预设数目，所述存储器控制电路单元还用以判定所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件。In an exemplary embodiment of the present invention, the memory control circuit unit is further configured to determine whether the number of the replacement physical units in the rewritable non-volatile memory module is based on the number of replacement physical units Meet the preset number. If the number of the replacement physical units in the rewritable nonvolatile memory module meets the preset number, the memory control circuit unit is also used to determine the rewritable nonvolatile memory The number of the replacement entity units of the module meets the preset condition.
在本发明的一范例实施例中，所述存储器控制电路单元将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的操作包括：从所述可复写式非易失性存储器模块的所述可用实体单元中选择至少其中之一；以及将所选择的可用实体单元关联为所述替换实体单元。In an exemplary embodiment of the present invention, the memory control circuit unit adjusts the usable capacity of the rewritable non-volatile memory module from the first usable capacity to the second usable capacity The method includes: selecting at least one of the available physical units of the rewritable non-volatile memory module; and associating the selected available physical unit as the replacement physical unit.
在本发明的一范例实施例中，所述存储器控制电路单元将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的操作包括：接收第一操作指令；根据所述第一操作指令将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量；以及回复对应于所述第一操作指令的操作失败消息。In an exemplary embodiment of the present invention, the memory control circuit unit adjusts the usable capacity of the rewritable non-volatile memory module from the first usable capacity to the second usable capacity including: receiving a first operation instruction; adjusting the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity according to the first operation instruction; and replying An operation failure message corresponding to the first operation instruction.
在本发明的一范例实施例中，所述存储器控制电路单元还用以提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的第二容量信息给所述主机系统。所述存储器控制电路单元还用以接收第二操作指令。所述存储器控制电路单元还用以根据所述第二操作指令，发送格式化操作指令序列以指示格式化所述可复写式非易失性存储器模块。所述格式化后的所述可复写式非易失性存储器模块具有所述第二可用容量。In an exemplary embodiment of the present invention, the memory control circuit unit is further configured to provide second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system . The memory control circuit unit is also used for receiving a second operation instruction. The memory control circuit unit is further configured to send a formatting operation instruction sequence to instruct to format the rewritable non-volatile memory module according to the second operation instruction. The formatted rewritable non-volatile memory module has the second available capacity.
本发明的另一范例实施例提供一种存储器控制电路单元，其用于控制可复写式非易失性存储器模块，所述存储器控制电路单元包括主机接口、存储器接口及存储器管理电路。所述主机接口用以电性连接至主机系统。所述存储器接口用以电性连接至所述可复写式非易失性存储器模块。所述存储器管理电路电性连接至所述主机接口与所述存储器接口。所述存储器管理电路用以检测所述可复写式非易失性存储器模块的替换实体单元数目。所述替换实体单元数目与所述可复写式非易失性存储器模块中的至少一替换实体单元的数目有关。每一所述替换实体单元用以替换所述可复写式非易失性存储器模块中的损坏实体单元。若所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件，所述存储器管理电路还用以将所述可复写式非易失性存储器模块的可用容量从第一可用容量调整为第二可用容量，其中所述可用容量是指所述可复写式非易失性存储器模块中的多个可用实体单元的容量总和。每一所述可用实体单元皆不属于所述替换实体单元。Another exemplary embodiment of the present invention provides a memory control circuit unit for controlling a rewritable non-volatile memory module. The memory control circuit unit includes a host interface, a memory interface, and a memory management circuit. The host interface is used to electrically connect to the host system. The memory interface is used to electrically connect to the rewritable non-volatile memory module. The memory management circuit is electrically connected to the host interface and the memory interface. The memory management circuit is used for detecting the number of replacement physical units of the rewritable non-volatile memory module. The number of replacement physical units is related to the number of at least one replacement physical unit in the rewritable non-volatile memory module. Each of the replacement physical units is used to replace a damaged physical unit in the rewritable non-volatile memory module. If the number of the replacement physical units of the rewritable nonvolatile memory module meets the preset condition, the memory management circuit is further configured to change the available capacity of the rewritable nonvolatile memory module from The first available capacity is adjusted to the second available capacity, wherein the available capacity refers to the sum of capacities of multiple available physical units in the rewritable non-volatile memory module. Each of the available physical units does not belong to the replacement physical unit.
在本发明的一范例实施例中，所述第二可用容量小于所述第一可用容量。In an exemplary embodiment of the present invention, the second available capacity is smaller than the first available capacity.
在本发明的一范例实施例中，在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之前，所述存储器管理电路还用以提供与所述可复写式非易失性存储器模块的所述第一可用容量有关的第一容量信息给所述主机系统。在检测到所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件之后，所述存储器管理电路还用以提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的第二容量信息给所述主机系统In an exemplary embodiment of the present invention, before detecting that the number of replacement physical units of the rewritable non-volatile memory module meets the preset condition, the memory management circuit is further configured to provide The first capacity information related to the first available capacity of the rewritable non-volatile memory module is sent to the host system. After detecting that the number of replacement physical units of the rewritable nonvolatile memory module complies with the preset condition, the memory management circuit is also used to provide the rewritable nonvolatile memory module with second capacity information related to the second available capacity to the host system
在本发明的一范例实施例中，若所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件，所述存储器管理电路还用以不将所述可复写式非易失性存储器模块宣告为写入保护状态。In an exemplary embodiment of the present invention, if the number of replacement physical units of the rewritable non-volatile memory module meets the preset condition, the memory management circuit is also configured not to The non-volatile memory module is declared as write-protected.
在本发明的一范例实施例中，在提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的所述第二容量信息给所述主机系统之前，所述存储器管理电路还用以重新将所述可复写式非易失性存储器模块上电，或者执行断电上电模拟操作。In an exemplary embodiment of the present invention, before providing the second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system, the memory management The circuit is also used to re-power on the rewritable non-volatile memory module, or perform a power-off and power-on simulation operation.
在本发明的一范例实施例中，所述存储器管理电路还用以根据所述替换实体单元数目判断所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目是否符合预设数目。若所述可复写式非易失性存储器模块中的所述替换实体单元的所述数目符合所述预设数目，所述存储器管理电路还用以判定所述可复写式非易失性存储器模块的所述替换实体单元数目符合所述预设条件。In an exemplary embodiment of the present invention, the memory management circuit is further used to judge whether the number of the replacement physical units in the rewritable non-volatile memory module conforms to Default number. If the number of the replacement physical units in the rewritable nonvolatile memory module meets the preset number, the memory management circuit is also used to determine the rewritable nonvolatile memory module The number of the replacement entity units meets the preset condition.
在本发明的一范例实施例中，所述存储器管理电路将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的操作包括：从所述可复写式非易失性存储器模块的所述可用实体单元中选择至少其中之一；以及将所选择的可用实体单元关联为所述替换实体单元。In an exemplary embodiment of the present invention, the operation of the memory management circuit to adjust the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity includes Selecting at least one of the available physical units of the rewritable non-volatile memory module; and associating the selected available physical unit as the replacement physical unit.
在本发明的一范例实施例中，所述存储器管理电路将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量的操作包括：接收第一操作指令；根据所述第一操作指令将所述可复写式非易失性存储器模块的所述可用容量从所述第一可用容量调整为所述第二可用容量；以及回复对应于所述第一操作指令的操作失败消息。In an exemplary embodiment of the present invention, the operation of the memory management circuit to adjust the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity includes : receiving a first operation instruction; adjusting the available capacity of the rewritable non-volatile memory module from the first available capacity to the second available capacity according to the first operation instruction; and replying to the corresponding An operation failure message related to the first operation instruction.
在本发明的一范例实施例中，所述存储器管理电路还用以提供与所述可复写式非易失性存储器模块的所述第二可用容量有关的第二容量信息给所述主机系统。所述存储器管理电路还用以接收第二操作指令。所述存储器管理电路还用以根据所述第二操作指令，发送格式化操作指令序列以指示格式化所述可复写式非易失性存储器模块。所述格式化后的所述可复写式非易失性存储器模块具有所述第二可用容量。In an exemplary embodiment of the present invention, the memory management circuit is further configured to provide second capacity information related to the second available capacity of the rewritable non-volatile memory module to the host system. The memory management circuit is also used for receiving a second operation instruction. The memory management circuit is further configured to send a formatting operation instruction sequence to instruct to format the rewritable non-volatile memory module according to the second operation instruction. The formatted rewritable non-volatile memory module has the second available capacity.
基于上述，本发明会在检测到可复写式非易失性存储器模块的替换实体单元数目符合某一个预设条件时，调整可复写式非易失性存储器模块的可用容量。藉此，可延长存储器储存装置的使用寿命。Based on the above, the present invention adjusts the available capacity of the rewritable nonvolatile memory module when it detects that the number of replacement physical units of the rewritable nonvolatile memory module meets a certain preset condition. Thereby, the service life of the memory storage device can be extended.
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
附图说明Description of drawings
图1是本发明的一范例实施例所示出的主机系统与存储器储存装置的示意图；FIG. 1 is a schematic diagram of a host system and a memory storage device shown in an exemplary embodiment of the present invention;
图2是本发明的一范例实施例所示出的电脑、输入/输出装置与存储器储存装置的示意图；FIG. 2 is a schematic diagram of a computer, an input/output device, and a memory storage device according to an exemplary embodiment of the present invention;
图3是本发明的一范例实施例所示出的主机系统与存储器储存装置的示意图；3 is a schematic diagram of a host system and a memory storage device shown in an exemplary embodiment of the present invention;
图4是示出图1所示的存储器储存装置的概要方块图；FIG. 4 is a schematic block diagram illustrating the memory storage device shown in FIG. 1;
图5是本发明的一范例实施例所示出的可复写式非易失性存储器模块的概要方块图；FIG. 5 is a schematic block diagram of a rewritable non-volatile memory module shown in an exemplary embodiment of the present invention;
图6是本发明的一范例实施例所示出的存储单元阵列的示意图；FIG. 6 is a schematic diagram of a memory cell array shown in an exemplary embodiment of the present invention;
图7是本发明的一范例实施例所示出的存储器控制电路单元的概要方块图；7 is a schematic block diagram of a memory control circuit unit shown in an exemplary embodiment of the present invention;
图8是本发明的一范例实施例所示出的管理可复写式非易失性存储器模块的示意图；FIG. 8 is a schematic diagram of managing a rewritable non-volatile memory module shown in an exemplary embodiment of the present invention;
图9是本发明的一范例实施例所示出的以替换实体单元来取代损坏实体单元的示意图；Fig. 9 is a schematic diagram of replacing a damaged physical unit with a replacement physical unit according to an exemplary embodiment of the present invention;
图10是本发明的一范例实施例所示出的调整可复写式非易失性存储器模块的可用容量的示意图；FIG. 10 is a schematic diagram of adjusting the available capacity of a rewritable non-volatile memory module shown in an exemplary embodiment of the present invention;
图11是本发明的一范例实施例所示出的存储器管理方法的流程图。FIG. 11 is a flowchart of a memory management method shown in an exemplary embodiment of the present invention.
附图标记说明：Explanation of reference signs:
10：存储器储存装置；10: memory storage device;
11：主机系统；11: host system;
12：电脑；12: computer;
122：微处理器；122: microprocessor;
124：随机存取存储器；124: random access memory;
126：系统总线；126: system bus;
128：数据传输接口；128: data transmission interface;
13：输入/输出装置；13: input/output device;
21：鼠标；21: mouse;
22：键盘；22: keyboard;
23：显示器；23: Display;
24：打印机；24: printer;
25：U盘；25: U disk;
26：记忆卡；26: memory card;
27：固态硬盘；27: SSD;
31：数码相机；31: digital camera;
32：SD卡；32: SD card;
33：MMC卡；33: MMC card;
34：记忆棒；34: memory stick;
35：CF卡；35: CF card;
36：嵌入式储存装置；36: embedded storage device;
402：连接接口单元；402: connect the interface unit;
404：存储器控制电路单元；404: memory control circuit unit;
406：可复写式非易失性存储器模块；406: a rewritable non-volatile memory module;
502：存储单元阵列；502: memory cell array;
504：字符线控制电路；504: character line control circuit;
506：比特线控制电路；506: bit line control circuit;
508：行解码器；508: row decoder;
510：数据输入/输出缓冲器；510: data input/output buffer;
512：控制电路；512: control circuit;
602：存储单元；602: storage unit;
604：比特线；604: bit line;
606：字符线；606: character line;
608：共用源极线；608: sharing the source line;
612、614：晶体管；612, 614: transistors;
702：存储器管理电路；702: memory management circuit;
704：主机接口；704: host interface;
706：存储器接口；706: memory interface;
708：错误校验与校正电路；708: error checking and correction circuit;
710：缓冲存储器；710: buffer memory;
712：电源管理电路；712: power management circuit;
800(0)～800(R)：实体抹除单元；800(0)～800(R): Entity erasing unit;
810(0)～810(D)：逻辑单元；810(0)～810(D): logic unit;
802：储存区；802: storage area;
806：系统区；806: system area;
901(0)～901(N+1)、1001(0)～1001(N)：可用实体单元；901(0)～901(N+1), 1001(0)～1001(N): available physical units;
902(0)～902(M)、1002(0)～1002(Q)：替换实体单元；902(0)～902(M), 1002(0)～1002(Q): replace entity unit;
903(0)、1003(0)～1003(M)：损坏实体单元；903(0), 1003(0)～1003(M): damaged entity unit;
S1101～S1107：步骤。S1101-S1107: steps.
具体实施方式detailed description
一般而言，存储器储存装置(也称，存储器储存系统)包括可复写式非易失性存储器模块(rewritable non-volatile memory module)与控制器(也称，控制电路)。通常存储器储存装置是与主机系统一起使用，以使主机系统可将数据写入至存储器储存装置或从存储器储存装置中读取数据。Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module (rewritable non-volatile memory module) and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.
图1是本发明的一范例实施例所示出的主机系统与存储器储存装置的示意图。图2是本发明的一范例实施例所示出的电脑、输入/输出装置与存储器储存装置的示意图。FIG. 1 is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment of the present invention. FIG. 2 is a schematic diagram of a computer, an input/output device and a memory storage device according to an exemplary embodiment of the present invention.
请参照图1，主机系统11一般包括电脑12与输入/输出(input/output,I/O)装置13。电脑12包括微处理器122、随机存取存储器(random access memory,RAM)124、系统总线126与数据传输接口128。输入/输出装置13包括如图2的鼠标21、键盘22、显示器23与打印机24。必须了解的是，图2所示的装置非限制输入/输出装置13，输入/输出装置13可还包括其他装置。Referring to FIG. 1 , the host system 11 generally includes a computer 12 and an input/output (I/O) device 13 . The computer 12 includes a microprocessor 122 , a random access memory (random access memory, RAM) 124 , a system bus 126 and a data transmission interface 128 . The input/output device 13 includes a mouse 21 , a keyboard 22 , a monitor 23 and a printer 24 as shown in FIG. 2 . It must be understood that the device shown in FIG. 2 is not limited to the input/output device 13, and the input/output device 13 may also include other devices.
在一范例实施例中，存储器储存装置10是通过数据传输接口128与主机系统11的其他元件电性连接。藉由微处理器122、随机存取存储器124与输入/输出装置13的运作可将数据写入至存储器储存装置10或从存储器储存装置10中读取数据。例如，存储器储存装置10可以是如图2所示的U盘25、记忆卡26或固态硬盘(Solid State Drive,SSD)27等的可复写式非易失性存储器储存装置。In an exemplary embodiment, the memory storage device 10 is electrically connected to other components of the host system 11 through the data transmission interface 128 . Data can be written into the memory storage device 10 or read from the memory storage device 10 by the operation of the microprocessor 122 , the random access memory 124 and the input/output device 13 . For example, the memory storage device 10 may be a rewritable non-volatile memory storage device such as a USB flash drive 25 , a memory card 26 or a solid state drive (Solid State Drive, SSD) 27 as shown in FIG. 2 .
图3是本发明的一范例实施例所示出的主机系统与存储器储存装置的示意图。FIG. 3 is a schematic diagram of a host system and a memory storage device according to an exemplary embodiment of the present invention.
一般而言，主机系统11为可实质地与存储器储存装置10配合以储存数据的任意系统。虽然在本范例实施例中，主机系统11是以电脑系统来作说明，然而，另一范例实施例中，主机系统11可以是数码相机、摄影机、通信装置、音频播放器或视频播放器等系统。例如，在主机系统为数码相机(摄影机)31时，可复写式非易失性存储器储存装置则为其所使用的SD卡32、MMC卡33、记忆棒(memory stick)34、CF卡35或嵌入式储存装置36(如图3所示)。嵌入式储存装置36包括嵌入式多媒体卡(Embedded MMC,eMMC)。值得一提的是，嵌入式多媒体卡是直接电性连接于主机系统的基板上。In general, the host system 11 is any system that can substantially cooperate with the memory storage device 10 to store data. Although in this exemplary embodiment, the host system 11 is described as a computer system, however, in another exemplary embodiment, the host system 11 may be a system such as a digital camera, a video camera, a communication device, an audio player, or a video player. . For example, when the host system is a digital camera (video camera) 31, the rewritable non-volatile memory storage device is the SD card 32, MMC card 33, memory stick (memory stick) 34, CF card 35 or An embedded storage device 36 (as shown in FIG. 3 ). The embedded storage device 36 includes an embedded multimedia card (Embedded MMC, eMMC). It is worth mentioning that the embedded multimedia card is directly electrically connected to the substrate of the host system.
图4是示出图1所示的存储器储存装置的概要方块图。FIG. 4 is a schematic block diagram showing the memory storage device shown in FIG. 1 .
请参照图4，存储器储存装置10包括连接接口单元402、存储器控制电路单元404与可复写式非易失性存储器模块406。Referring to FIG. 4 , the memory storage device 10 includes a connection interface unit 402 , a memory control circuit unit 404 and a rewritable non-volatile memory module 406 .
在本范例实施例中，连接接口单元402是相容于串行高级技术附件(SerialAdvanced Technology Attachment,SATA)标准。然而，必须了解的是，本发明不限于此，连接接口单元402也可以是符合并行高级技术附件(ParallelAdvanced Technology Attachment,PATA)标准、电气和电子工程师协会(Instituteof Electrical and Electronic Engineers,IEEE)1394标准、高速外设部件互连(Peripheral Component Interconnect Express,PCI Express)标准、通用串行总线(Universal Serial Bus,USB)标准、安全数字(Secure Digital,SD)接口标准、超高速一代(Ultra High Speed-I,UHS-I)接口标准、超高速二代(Ultra High Speed-II,UHS-II)接口标准、记忆棒(Memory Stick,MS)接口标准、多媒体储存卡(MultiMedia Card,MMC)接口标准、崁入式多媒体储存卡(Embedded MultimediaCard,eMMC)接口标准、通用快闪存储器(Universal Flash Storage,UFS)接口标准、小型快闪(Compact Flash,CF)接口标准、电子集成驱动器接口(IntegratedDevice Electronics,IDE)标准或其他适合的标准。连接接口单元402可与存储器控制电路单元404封装在一个芯片中，或者连接接口单元402是布设于一包含存储器控制电路单元404的芯片外。In this exemplary embodiment, the connection interface unit 402 is compatible with the Serial Advanced Technology Attachment (SATA) standard. However, it must be understood that the present invention is not limited thereto, and the connection interface unit 402 may also be in accordance with the Parallel Advanced Technology Attachment (Parallel Advanced Technology Attachment, PATA) standard, the Institute of Electrical and Electronic Engineers (Institute of Electrical and Electronic Engineers, IEEE) 1394 standard , Peripheral Component Interconnect Express (PCI Express) standard, Universal Serial Bus (USB) standard, Secure Digital (Secure Digital, SD) interface standard, Ultra High Speed- I, UHS-I) interface standard, Ultra High Speed-II (UHS-II) interface standard, Memory Stick (Memory Stick, MS) interface standard, MultiMedia Card (MultiMedia Card, MMC) interface standard, Embedded Multimedia Card (eMMC) interface standard, Universal Flash Storage (UFS) interface standard, Compact Flash (CF) interface standard, Integrated Device Electronics (IDE) interface standard ) standard or other suitable standard. The connection interface unit 402 can be packaged with the memory control circuit unit 404 in one chip, or the connection interface unit 402 can be arranged outside a chip including the memory control circuit unit 404 .
存储器控制电路单元404用以执行以硬件式或固件式实作的多个逻辑门或控制指令并且根据主机系统11的指令在可复写式非易失性存储器模块406中进行数据的写入、读取与抹除等运作。The memory control circuit unit 404 is used to execute a plurality of logic gates or control instructions implemented in hardware or firmware, and write and read data in the rewritable non-volatile memory module 406 according to the instructions of the host system 11. Fetch and erase operations.
可复写式非易失性存储器模块406是电性连接至存储器控制电路单元404并且用以储存主机系统11所写入的数据。可复写式非易失性存储器模块406可以是单阶存储单元(Single Level Cell,SLC)NAND型快闪存储器模块(即，一个存储单元中可储存1个比特数据的快闪存储器模块)、多阶存储单元(Multi Level Cell,MLC)NAND型快闪存储器模块(即，一个存储单元中可储存2个比特数据的快闪存储器模块)、复数阶存储单元(Triple Level Cell，TLC)NAND型快闪存储器模块(即，一个存储单元中可储存3个比特数据的快闪存储器模块)、其他快闪存储器模块或其他具有相同特性的存储器模块。The rewritable non-volatile memory module 406 is electrically connected to the memory control circuit unit 404 and used for storing data written by the host system 11 . The rewritable non-volatile memory module 406 can be a single-level storage unit (Single Level Cell, SLC) NAND flash memory module (that is, a flash memory module that can store 1 bit of data in a storage unit), multiple Multi-level cell (Multi Level Cell, MLC) NAND-type flash memory module (that is, a flash memory module that can store 2 bits of data in one storage unit), multiple-level storage unit (Triple Level Cell, TLC) NAND-type flash memory module A flash memory module (that is, a flash memory module that can store 3 bits of data in one storage unit), other flash memory modules, or other memory modules with the same characteristics.
图5是本发明的一范例实施例所示出的可复写式非易失性存储器模块的概要方块图。图6是本发明的一范例实施例所示出的存储单元阵列的示意图。FIG. 5 is a schematic block diagram of a rewritable non-volatile memory module according to an exemplary embodiment of the present invention. FIG. 6 is a schematic diagram of a memory cell array according to an exemplary embodiment of the present invention.
请参照图5，可复写式非易失性存储器模块406包括存储单元阵列502、字符线控制电路504、比特线控制电路506、行解码器(column decoder)508、数据输入/输出缓冲器510与控制电路512。Please refer to FIG. 5, the rewritable non-volatile memory module 406 includes a memory cell array 502, a word line control circuit 504, a bit line control circuit 506, a row decoder (column decoder) 508, a data input/output buffer 510 and control circuit 512 .
在本范例实施例中，存储单元阵列502可包括用以储存数据的多个存储单元602、多个选择栅漏极(select gate drain,SGD)晶体管612与多个选择栅源极(select gate source,SGS)晶体管614、以及连接此些存储单元的多条比特线604、多条字符线606、与共用源极线608(如图6所示)。存储单元602是以阵列方式(或立体堆叠的方式)配置在比特线604与字符线606的交叉点上。当从存储器控制电路单元404接收到写入指令或读取指令时，控制电路512会控制字符线控制电路504、比特线控制电路506、行解码器508、数据输入/输出缓冲器510来写入数据至存储单元阵列502或从存储单元阵列502中读取数据，其中字符线控制电路504用以控制施予至字符线606的电压，比特线控制电路506用以控制施予至比特线604的电压，行解码器508依据指令中的列位址以选择对应的比特线，并且数据输入/输出缓冲器510用以暂存数据。In this exemplary embodiment, the memory cell array 502 may include a plurality of memory cells 602 for storing data, a plurality of select gate drain (SGD) transistors 612 and a plurality of select gate source (select gate source) , SGS) transistor 614, and a plurality of bit lines 604 connected to these memory cells, a plurality of word lines 606, and a common source line 608 (as shown in FIG. 6 ). The memory cells 602 are arranged in an array (or three-dimensionally stacked) at intersections of the bit lines 604 and the word lines 606 . When receiving a write instruction or a read instruction from the memory control circuit unit 404, the control circuit 512 will control the word line control circuit 504, the bit line control circuit 506, the row decoder 508, and the data input/output buffer 510 to write Data to the memory cell array 502 or read data from the memory cell array 502, wherein the word line control circuit 504 is used to control the voltage given to the word line 606, and the bit line control circuit 506 is used to control the voltage given to the bit line 604 The row decoder 508 selects the corresponding bit line according to the column address in the instruction, and the data input/output buffer 510 is used for temporarily storing data.
可复写式非易失性存储器模块406中的每一个存储单元是以临界电压的改变来储存一或多个比特。具体来说，每一个存储单元的控制删极(control gate)与通道之间有一个电荷捕捉层。通过施予一写入电压至控制栅极，可以改变电荷补捉层的电子量，因而改变了存储单元的临界电压。此改变临界电压的程序也称为”把数据写入至存储单元”或”程序化存储单元”。随着临界电压的改变，存储单元阵列502的每一个存储单元具有多个储存状态。并且通过读取电压可以判断存储单元是属于哪一个储存状态，藉此取得存储单元所储存的一或多个比特。Each memory cell in the rewritable non-volatile memory module 406 stores one or more bits by changing the threshold voltage. Specifically, there is a charge trapping layer between the control gate and the channel of each memory cell. By applying a write voltage to the control gate, the amount of electrons in the charge trapping layer can be changed, thereby changing the threshold voltage of the memory cell. This process of changing the threshold voltage is also called "writing data into the memory cell" or "programming the memory cell". Each memory cell of the memory cell array 502 has multiple storage states as the threshold voltage changes. And by reading the voltage, it can be judged which storage state the memory cell belongs to, so as to obtain one or more bits stored in the memory cell.
图7是本发明的一范例实施例所示出的存储器控制电路单元的概要方块图。FIG. 7 is a schematic block diagram of a memory control circuit unit shown in an exemplary embodiment of the present invention.
请参照图7，存储器控制电路单元404包括存储器管理电路702、主机接口704、存储器接口706及错误校验与校正电路708。Referring to FIG. 7 , the memory control circuit unit 404 includes a memory management circuit 702 , a host interface 704 , a memory interface 706 and an error checking and correction circuit 708 .
存储器管理电路702用以控制存储器控制电路单元404的整体运作。具体来说，存储器管理电路702具有多个控制指令，并且在存储器储存装置10运作时，此些控制指令会被执行以进行数据的写入、读取与抹除等运作。以下说明存储器管理电路702的操作时，等同于说明存储器控制电路单元404的操作。The memory management circuit 702 is used to control the overall operation of the memory control circuit unit 404 . Specifically, the memory management circuit 702 has a plurality of control instructions, and when the memory storage device 10 is operating, these control instructions will be executed to perform operations such as writing, reading, and erasing data. When describing the operation of the memory management circuit 702 below, it is equivalent to describing the operation of the memory control circuit unit 404 .
在本范例实施例中，存储器管理电路702的控制指令是以固件式来实作。例如，存储器管理电路702具有微处理器单元(未示出)与只读存储器(未示出)，并且此些控制指令是被烧录至此只读存储器中。当存储器储存装置10运作时，此些控制指令会由微处理器单元来执行以进行数据的写入、读取与抹除等运作。In this exemplary embodiment, the control commands of the memory management circuit 702 are implemented in firmware. For example, the memory management circuit 702 has a microprocessor unit (not shown) and a read-only memory (not shown), and these control instructions are burned into the read-only memory. When the memory storage device 10 is in operation, these control instructions will be executed by the microprocessor unit to perform operations such as writing, reading, and erasing data.
在另一范例实施例中，存储器管理电路702的控制指令也可以程序码型式储存于可复写式非易失性存储器模块406的特定区域(例如，存储器模块中专用于存放系统数据的系统区)中。此外，存储器管理电路702具有微处理器单元(未示出)、只读存储器(未示出)及随机存取存储器(未示出)。特别是，此只读存储器具有开机码(boot code)，并且当存储器控制电路单元404被致能时，微处理器单元会先执行此开机码来将储存于可复写式非易失性存储器模块406中的控制指令载入至存储器管理电路702的随机存取存储器中。之后，微处理器单元会运转此些控制指令以进行数据的写入、读取与抹除等运作。In another exemplary embodiment, the control instructions of the memory management circuit 702 may also be stored in a specific area of the rewritable non-volatile memory module 406 (for example, a system area in the memory module dedicated to storing system data) in the form of program codes. middle. In addition, the memory management circuit 702 has a microprocessor unit (not shown), a read only memory (not shown), and a random access memory (not shown). In particular, the ROM has a boot code (boot code), and when the memory control circuit unit 404 is enabled, the microprocessor unit will first execute the boot code to store in the rewritable non-volatile memory module The control instructions in 406 are loaded into the random access memory of the memory management circuit 702 . Afterwards, the microprocessor unit will execute these control instructions to perform operations such as writing, reading and erasing data.
此外，在另一范例实施例中，存储器管理电路702的控制指令也可以一硬件式来实作。例如，存储器管理电路702包括微控制器、实体单元管理电路、存储器写入电路、存储器读取电路、存储器抹除电路与数据处理电路。实体单元管理电路、存储器写入电路、存储器读取电路、存储器抹除电路与数据处理电路是电性连接至微控制器。其中，实体单元管理电路用以管理可复写式非易失性存储器模块406的实体抹除单元；存储器写入电路用以对可复写式非易失性存储器模块406下达写入指令序列以将数据写入至可复写式非易失性存储器模块406中；存储器读取电路用以对可复写式非易失性存储器模块406下达读取指令序列以从可复写式非易失性存储器模块406中读取数据；存储器抹除电路用以对可复写式非易失性存储器模块406下达抹除指令序列以将数据从可复写式非易失性存储器模块406中抹除；而数据处理电路用以处理欲写入至可复写式非易失性存储器模块406的数据以及从可复写式非易失性存储器模块406中读取的数据。写入指令序列、读取指令序列及抹除指令序列可各别包括一或多个程序码或指令码并且用以指示可复写式非易失性存储器模块406执行相对应的写入、读取及抹除等操作。In addition, in another exemplary embodiment, the control instructions of the memory management circuit 702 may also be implemented in a hardware manner. For example, the memory management circuit 702 includes a microcontroller, a physical unit management circuit, a memory writing circuit, a memory reading circuit, a memory erasing circuit and a data processing circuit. The physical unit management circuit, the memory writing circuit, the memory reading circuit, the memory erasing circuit and the data processing circuit are electrically connected to the microcontroller. Wherein, the physical unit management circuit is used to manage the physical erasing unit of the rewritable non-volatile memory module 406; the memory write circuit is used to issue a write command sequence to the rewritable non-volatile memory module 406 to write data Write in the rewritable non-volatile memory module 406; the memory read circuit is used to issue a read instruction sequence to the rewritable non-volatile memory module 406 to read from the rewritable non-volatile memory module 406 Read data; the memory erasing circuit is used to issue an erase command sequence to the rewritable non-volatile memory module 406 to erase data from the rewritable non-volatile memory module 406; and the data processing circuit is used to Data to be written into the rewritable non-volatile memory module 406 and data read from the rewritable non-volatile memory module 406 are processed. The write command sequence, the read command sequence and the erase command sequence may respectively include one or more program codes or command codes and are used to instruct the rewritable non-volatile memory module 406 to perform corresponding write, read and erase operations.
主机接口704是电性连接至存储器管理电路702并且用以接收与识别主机系统11所传送的指令与数据。也就是说，主机系统11所传送的指令与数据会通过主机接口704来传送至存储器管理电路702。在本范例实施例中，主机接口704是相容于SATA标准。然而，必须了解的是本发明不限于此，主机接口704也可以是相容于PATA标准、IEEE 1394标准、PCI Express标准、USB标准、SD标准、UHS-I标准、UHS-II标准、MS标准、MMC标准、eMMC标准、UFS标准、CF标准、IDE标准或其他适合的数据传输标准。The host interface 704 is electrically connected to the memory management circuit 702 and used for receiving and identifying commands and data transmitted by the host system 11 . That is to say, the commands and data sent by the host system 11 are sent to the memory management circuit 702 through the host interface 704 . In this exemplary embodiment, the host interface 704 is compatible with the SATA standard. However, it must be understood that the present invention is not limited thereto, and the host interface 704 may also be compatible with PATA standard, IEEE 1394 standard, PCI Express standard, USB standard, SD standard, UHS-I standard, UHS-II standard, MS standard , MMC standard, eMMC standard, UFS standard, CF standard, IDE standard or other suitable data transmission standards.
存储器接口706是电性连接至存储器管理电路702并且用以存取可复写式非易失性存储器模块406。也就是说，欲写入至可复写式非易失性存储器模块406的数据会经由存储器接口706转换为可复写式非易失性存储器模块406所能接受的格式。具体来说，若存储器管理电路702要存取可复写式非易失性存储器模块406，存储器接口706会传送对应的指令序列。这些指令序列可包括一或多个信号，或是在总线上的数据。例如，在读取指令序列中，会包括读取的辨识码、存储器位址等信息。The memory interface 706 is electrically connected to the memory management circuit 702 and used for accessing the rewritable non-volatile memory module 406 . That is to say, the data to be written into the rewritable nonvolatile memory module 406 will be converted into a format acceptable to the rewritable nonvolatile memory module 406 via the memory interface 706 . Specifically, if the memory management circuit 702 wants to access the rewritable non-volatile memory module 406, the memory interface 706 will transmit the corresponding instruction sequence. These command sequences may include one or more signals, or data on a bus. For example, in the read command sequence, the read identification code, memory address and other information will be included.
错误校验与校正电路708是电性连接至存储器管理电路702并且用以执行错误检查与校正程序以确保数据的正确性。具体来说，当存储器管理电路702从主机系统11中接收到写入指令时，错误校验与校正电路708会为对应此写入指令的数据产生对应的错误更正码(error correcting code,ECC)及/或错误检查码(error detecting code，EDC)，并且存储器管理电路702会将对应此写入指令的数据与对应的错误更正码及/或错误检查码写入至可复写式非易失性存储器模块406中。之后，当存储器管理电路702从可复写式非易失性存储器模块406中读取数据时会同时读取此数据对应的错误更正码及/或错误检查码，并且错误校验与校正电路708会依据此错误更正码及/或错误检查码对所读取的数据执行错误校验与校正程序。The error checking and correcting circuit 708 is electrically connected to the memory management circuit 702 and used for executing error checking and correcting procedures to ensure the correctness of data. Specifically, when the memory management circuit 702 receives a write command from the host system 11, the error checking and correction circuit 708 will generate a corresponding error correction code (error correcting code, ECC) for the data corresponding to the write command and/or error checking code (error detecting code, EDC), and the memory management circuit 702 will write the data corresponding to the write command and the corresponding error correction code and/or error checking code into the rewritable non-volatile memory module 406. Afterwards, when the memory management circuit 702 reads data from the rewritable non-volatile memory module 406, it will simultaneously read the error correction code and/or error check code corresponding to the data, and the error check and correction circuit 708 will According to the error correction code and/or the error check code, an error checking and correction procedure is performed on the read data.
在一范例实施例中，存储器控制电路单元404还包括缓冲存储器710与电源管理电路712。缓冲存储器710是电性连接至存储器管理电路702并且用以暂存来自于主机系统11的数据与指令或来自于可复写式非易失性存储器模块406的数据。电源管理电路712是电性连接至存储器管理电路702并且用以控制存储器储存装置10的电源。In an exemplary embodiment, the memory control circuit unit 404 further includes a buffer memory 710 and a power management circuit 712 . The buffer memory 710 is electrically connected to the memory management circuit 702 and used for temporarily storing data and instructions from the host system 11 or data from the rewritable non-volatile memory module 406 . The power management circuit 712 is electrically connected to the memory management circuit 702 and used to control the power of the memory storage device 10 .
图8是本发明的一范例实施例所示出的管理可复写式非易失性存储器模块的示意图。必须了解的是，在此描述可复写式非易失性存储器模块406的实体抹除单元的运作时，以“选择”、“分组”、“划分”、“关联”等词来操作实体抹除单元是逻辑上的概念。也就是说，可复写式非易失性存储器模块的实体抹除单元的实际位置并未更动，而是逻辑上对可复写式非易失性存储器模块的实体抹除单元进行操作。FIG. 8 is a schematic diagram of managing a rewritable non-volatile memory module according to an exemplary embodiment of the present invention. It must be understood that when describing the operation of the physical erasing unit of the rewritable non-volatile memory module 406, words such as "selection", "grouping", "dividing", and "association" are used to operate physical erasing. A unit is a logical concept. That is to say, the actual position of the physical erasing unit of the rewritable non-volatile memory module is not changed, but the physical erasing unit of the rewritable non-volatile memory module is logically operated.
可复写式非易失性存储器模块406的存储单元会构成多个实体程序化单元，并且此些实体程序化单元会构成多个实体抹除单元。具体来说，同一条字符线上的存储单元会组成一或多个实体程序化单元。若每一个存储单元可储存2个以上的比特，则同一条字符线上的实体程序化单元至少可被分类为下实体程序化单元与上实体程序化单元。例如，一存储单元的最低有效比特(Least Significant Bit，LSB)是属于下实体程序化单元，并且一存储单元的最高有效比特(Most Significant Bit，MSB)是属于上实体程序化单元。一般来说，在MLC NAND型快闪存储器中，下实体程序化单元的写入速度会大于上实体程序化单元的写入速度，或下实体程序化单元的可靠度是高于上实体程序化单元的可靠度。在此范例实施例中，实体程序化单元为程序化的最小单元。即，实体程序化单元为写入数据的最小单元。例如，实体程序化单元为实体页面或是实体扇(sector)。若实体程序化单元为实体页面，则每一个实体程序化单元通常包括数据比特区与冗余比特区。数据比特区包含多个实体扇，用以储存使用者的数据，而冗余比特区用以储存系统的数据(例如，错误更正码)。在本范例实施例中，数据比特区包含32个实体扇，且一个实体扇的大小为512比特组(byte,B)。然而，在其他范例实施例中，数据比特区中也可包含8个、16个或数目更多或更少的实体扇，本发明并不限制实体扇的大小以及个数。另一方面，实体抹除单元为抹除的最小单位。即，每一实体抹除单元含有最小数目之一并被抹除的存储单元。例如，实体抹除单元为实体区块。The storage units of the rewritable non-volatile memory module 406 constitute a plurality of physical programming units, and these physical programming units constitute a plurality of physical erasing units. Specifically, storage units on the same word line form one or more physical programming units. If each storage unit can store more than 2 bits, the physical programming units on the same word line can be at least classified into lower physical programming units and upper physical programming units. For example, the Least Significant Bit (LSB) of a storage unit belongs to the lower physical programming unit, and the Most Significant Bit (MSB) of a storage unit belongs to the upper physical programming unit. Generally speaking, in MLC NAND flash memory, the writing speed of the lower physical programming unit is greater than that of the upper physical programming unit, or the reliability of the lower physical programming unit is higher than that of the upper physical programming unit. unit reliability. In this exemplary embodiment, the entity programming unit is the smallest unit of programming. That is, the entity programming unit is the smallest unit for writing data. For example, the entity programming unit is an entity page or an entity sector. If the physical programming unit is a physical page, each physical programming unit usually includes a data bit area and a redundant bit area. The data bit area includes a plurality of physical sectors for storing user data, and the redundant bit area is used for storing system data (eg, error correction code). In this exemplary embodiment, the data bit area includes 32 physical sectors, and the size of one physical sector is 512 bits (byte, B). However, in other exemplary embodiments, the data bit area may also include 8, 16 or more or less physical sectors, and the present invention does not limit the size and number of physical sectors. On the other hand, the entity erasing unit is the smallest unit of erasing. That is, each physical erase unit contains a minimum number of memory cells that are erased. For example, the physical erasing unit is a physical block.
请参照图8，存储器管理电路702可将可复写式非易失性存储器模块406的实体抹除单元800(0)～800(R)逻辑地划分为多个区域，例如为储存区802与系统区806。Please refer to FIG. 8, the memory management circuit 702 can logically divide the physical erasing units 800(0)-800(R) of the rewritable non-volatile memory module 406 into multiple areas, for example, the storage area 802 and the system District 806.
储存区802的实体抹除单元是用以储存来自主机系统11的数据。储存区802中会储存有效数据与无效数据。例如，当主机系统要删除一份有效数据时，被删除的数据可能还是储存在储存区802中，但会被标记为无效数据。没有储存有效数据的实体抹除单元也被称为闲置(spare)实体抹除单元。例如，被抹除以后的实体抹除单元便会成为闲置实体抹除单元。此外，有储存有效数据的实体抹除单元也被称为非闲置(non-spare)实体抹除单元。The physical erase unit of the storage area 802 is used to store data from the host system 11 . Valid data and invalid data are stored in the storage area 802 . For example, when the host system wants to delete a piece of valid data, the deleted data may still be stored in the storage area 802, but it will be marked as invalid data. A physical erasing unit that does not store valid data is also called a spare physical erasing unit. For example, the erased physical erasing unit becomes an idle physical erasing unit. In addition, the physical erasing unit that stores valid data is also called a non-spare physical erasing unit.
系统区806的实体抹除单元是用以记录系统数据，其中此系统数据包括关于存储器芯片的制造商与型号、存储器芯片的实体抹除单元数、每一实体抹除单元的实体程序化单元数等。此外，储存区802与系统区806的实体抹除单元的数量会依据不同的存储器规格而有所不同。The physical erasing unit of the system area 806 is used to record system data, wherein the system data includes the manufacturer and model of the memory chip, the number of physical erasing units of the memory chip, and the number of physical programming units of each physical erasing unit Wait. In addition, the numbers of physical erasing units in the storage area 802 and the system area 806 are different according to different memory specifications.
存储器管理电路702会配置逻辑单元810(0)～810(D)以映射至储存区802中的实体抹除单元800(0)～800(A)。例如，在本范例实施例中，主机系统11是通过逻辑位址来存取储存区802中的数据，因此，每一个逻辑单元810(0)～810(D)是指一个逻辑位址。此外，在一范例实施例中，每一个逻辑单元810(0)～810(D)也可以是指一个逻辑扇、一个逻辑程序化单元、一个逻辑抹除单元或者由多个连续的逻辑位址组成。每一个逻辑单元810(0)～810(D)是映射至一或多个实体单元。在本范例实施例中，一个实体单元是指一个实体抹除单元。然而，在另一范例实施例中，一个实体单元也可以是一个实体位址、一个实体扇、一个实体程序化单元或者是由多个连续的实体位址组成，本发明不加以限制。存储器管理电路702会将逻辑单元与实体单元之间的映射关系记录于至少一逻辑-实体映射表。当主机系统11欲从存储器储存装置10读取数据或写入数据至存储器储存装置10时，存储器管理电路702可根据此逻辑-实体映射表来执行对于存储器储存装置10的数据存取。The memory management circuit 702 configures the logic units 810 ( 0 )˜ 810 (D) to map to the physical erasing units 800 ( 0 )˜ 800 (A) in the storage area 802 . For example, in this exemplary embodiment, the host system 11 accesses the data in the storage area 802 through logical addresses, therefore, each logical unit 810(0)˜810(D) refers to a logical address. In addition, in an exemplary embodiment, each logical unit 810(0)-810(D) may also refer to a logical sector, a logical programming unit, a logical erasing unit, or a plurality of consecutive logical addresses composition. Each logical unit 810(0)-810(D) is mapped to one or more physical units. In this exemplary embodiment, a physical unit refers to a physical erasing unit. However, in another exemplary embodiment, a physical unit may also be a physical address, a physical sector, a physical programming unit, or consist of multiple consecutive physical addresses, which is not limited by the present invention. The memory management circuit 702 records the mapping relationship between logical units and physical units in at least one logical-physical mapping table. When the host system 11 intends to read data from or write data to the memory storage device 10 , the memory management circuit 702 can perform data access to the memory storage device 10 according to the logical-physical mapping table.
在本范例实施例中，储存区802包括多个可用实体单元以及至少一替换实体单元。可用实体单元是目前可用以储存有效数据及/或无效数据的实体单元。替换实体单元是用来替换储存区802或系统区806中损坏的实体单元。损坏的实体单元以下也称为损坏实体单元。一般来说，在存储器储存装置10出厂时，可用实体单元与替换实体单元各别符合一个标准数目。在存储器储存装置10的运作中，可用实体单元与替换实体单元各别的数目则是会动态地改变。例如，若储存区802中的某一个可用实体单元损坏，则储存区802中的一个替换实体单元会被选择来取代此损坏实体单元。也就是说，被选择来取代此损坏实体单元的替换实体单元会成为一个新的可用实体单元。此外，若系统区806中的某一个实体单元损坏，则储存区802中的一个替换实体单元也可以被选择来取代此损坏实体单元并且被关联至系统区806。In this exemplary embodiment, the storage area 802 includes a plurality of usable physical units and at least one replacement physical unit. Available physical units are physical units currently available to store valid data and/or invalid data. The replacement physical unit is used to replace a damaged physical unit in the storage area 802 or the system area 806 . Damaged solid elements are also referred to below as damaged solid elements. Generally, when the memory storage device 10 leaves the factory, the usable physical units and the replacement physical units respectively meet a standard number. During the operation of the memory storage device 10, the respective numbers of usable physical units and replacement physical units will change dynamically. For example, if an available physical unit in the storage area 802 is damaged, a replacement physical unit in the storage area 802 will be selected to replace the damaged physical unit. That is, the replacement solid element selected to replace the damaged solid element becomes a new usable solid element. In addition, if a physical unit in the system area 806 is damaged, a replacement physical unit in the storage area 802 may also be selected to replace the damaged physical unit and be associated with the system area 806 .
一般来说，若某一个存储器储存装置中替换实体单元的数目不足，例如，替换实体单元的数目小于一预设数目，则此存储器储存装置会被宣告为写入保护(write protect)状态，而无法再写入数据。例如，此预设数目为「1」。然而，这样的设定可能会缩短存储器储存装置的使用寿命。原因在于，在写入保护状态下，存储器储存装置将不会接收并且处理任何除了读取指令以外的操作指令。例如，在写入保护状态下，存储器储存装置无法执行数据的写入操作以及存储器储存装置的格式化操作。Generally speaking, if the number of replacement physical units in a certain memory storage device is insufficient, for example, the number of replacement physical units is less than a preset number, then the memory storage device will be declared as a write-protected (write protect) state, and Cannot write data anymore. For example, the default number is "1". However, such setting may shorten the service life of the memory storage device. The reason is that in the write-protected state, the memory storage device will not receive and process any operation commands except read commands. For example, in the write-protected state, the memory storage device cannot perform data writing operations and format operations of the memory storage device.
在本范例实施例中，若储存区802中替换实体单元的数目不足，则储存区802中原先用来储存数据的至少一可用实体单元也可以被关联为替换实体单元，从而延长存储器储存装置的使用寿命。若储存区802中的某一个可用实体单元被关联为替换实体单元，则此实体抹除单元将暂时不会被用来储存数据，直到此实体抹除单元再次被用来取代储存区802或系统区806中的某一个损坏实体单元为止。In this exemplary embodiment, if the number of replacement physical units in the storage area 802 is insufficient, at least one available physical unit that was originally used to store data in the storage area 802 may also be associated as a replacement physical unit, thereby extending the lifetime of the memory storage device. service life. If an available physical unit in the storage area 802 is associated as a replacement physical unit, the physical erasing unit will not be used to store data temporarily until the physical erasing unit is used to replace the storage area 802 or the system again. until one of the physical units in area 806 is damaged.
在本范例实施例中，存储器管理电路702会提供与可复写式非易失性存储器模块406的一可用容量(以下也称为第一可用容量)有关的容量信息(以下也称为第一容量信息)给主机系统11。可复写式非易失性存储器模块406的可用容量指的是储存区802中多个可用实体单元的一容量总和。例如，每一个可用实体单元皆有一可用容量，此容量总和为此些可用容量的总和。在本范例实施例中，一个可用实体单元是指一个实体抹除单元，故一个可用实体单元的可用容量会等于一个实体抹除单元的容量(例如，1024×1024千比特组)。在其他的范例实施例中，一个实体单元也可以是指一个实体位址、一个实体扇、一个实体程序化单元或者是由多个连续的实体位址组成，故一个可用实体单元的可用容量也可以等于一个实体位址、一个实体扇、一个实体程序化单元或者是多个连续的实体位址的容量，本发明不加以限制。此外，每一个可用实体单元的可用容量可能相同也可能不相同。例如，在一范例实施例中，若储存区802中多个实体单元具有不同的大小/容量，则储存区802中多个可用实体单元的可用容量也会不同。在本范例实施例中，用来计算此可用容量的总和的可用实体单元包含储存区802中所有的可用实体单元。在另一范例实施例中，用来计算此可用容量的总和的可用实体单元仅包含储存区802中部分而非全部的可用实体单元。In this exemplary embodiment, the memory management circuit 702 provides capacity information (hereinafter also referred to as the first capacity) related to an available capacity (hereinafter also referred to as the first available capacity) of the rewritable non-volatile memory module 406 information) to the host system 11. The available capacity of the rewritable non-volatile memory module 406 refers to a sum of capacities of multiple available physical units in the storage area 802 . For example, each available physical unit has an available capacity, and the sum of the capacity is the sum of these available capacities. In this exemplary embodiment, an available physical unit refers to a physical erase unit, so the available capacity of an available physical unit is equal to the capacity of a physical erase unit (for example, 1024×1024 kilobytes). In other exemplary embodiments, a physical unit may also refer to a physical address, a physical sector, a physical programming unit, or be composed of multiple consecutive physical addresses, so the available capacity of a usable physical unit is also It may be equal to the capacity of one physical address, one physical sector, one physical programming unit, or multiple consecutive physical addresses, which is not limited by the present invention. In addition, the usable capacity of each usable physical unit may or may not be the same. For example, in an exemplary embodiment, if the physical units in the storage area 802 have different sizes/capacities, the available capacities of the available physical units in the storage area 802 will also be different. In this exemplary embodiment, the available physical units used to calculate the sum of the available capacities include all available physical units in the storage area 802 . In another exemplary embodiment, the available physical units used to calculate the sum of the available capacities only include some but not all of the available physical units in the storage area 802 .
主机系统11可此第一容量信息来同步更新可复写式非易失性存储器模块406的可用容量。例如，若此第一容量信息指示目前可复写式非易失性存储器模块406的可用容量为“80G”，则主机系统11会纪录下此信息以进行后续对于可复写式非易失性存储器模块406的数据存取管理。例如，若主机系统11当前储存至可复写式非易失性存储器模块406的数据的数据大小达到“80G”，则主机系统11会判定可复写式非易失性存储器模块406的可用容量不足并且停止将其他的数据储存至可复写式非易失性存储器模块406中。The host system 11 can use the first capacity information to update the available capacity of the rewritable non-volatile memory module 406 synchronously. For example, if the first capacity information indicates that the current available capacity of the rewritable nonvolatile memory module 406 is "80G", then the host system 11 will record this information for subsequent processing of the rewritable nonvolatile memory module 406 data access management. For example, if the data size of the data currently stored in the rewritable nonvolatile memory module 406 by the host system 11 reaches "80G", the host system 11 will determine that the available capacity of the rewritable nonvolatile memory module 406 is insufficient and Stop storing other data in the rewritable non-volatile memory module 406 .
在存储器储存装置10的操作过程中，储存区802中某些可用实体单元会损坏，导致损坏实体单元的数目增加。若一个损坏实体单元出现，则一个替换实体单元会被用来替换此损坏实体单元，导致替换实体单元的数目减少。During the operation of the memory storage device 10 , some available physical units in the storage area 802 may be damaged, resulting in an increase in the number of damaged physical units. If a damaged solid element occurs, a replacement solid element will be used to replace the damaged solid element, resulting in a reduction in the number of replacement solid elements.
图9是本发明的一范例实施例所示出的以替换实体单元来取代损坏实体单元的示意图。FIG. 9 is a schematic diagram of replacing a damaged physical unit with a replacement physical unit according to an exemplary embodiment of the present invention.
请参照图9，假设储存区802原先包含可用实体单元901(0)～901(N)以及替换实体单元902(0)～902(M)。若可用实体单元901(0)损坏，例如，可用实体单元901(0)变成损坏实体单元903(0)，则替换实体单元902(0)可被用来替换损坏实体单元903(0)成为新的可用实体单元901(N+1)。同时，替换实体单元的数目减“1”，剩下替换实体单元902(1)～902(M)。经过不断地用一个替换实体单元来替换一个损坏实体单元，则替换实体单元的数目会不断减少。在本范例实施例中，N与M都是正整数，且M小于N。然而，在另一范例实施例中，M也可以等于或大于N。Referring to FIG. 9 , assume that the storage area 802 originally includes available physical units 901 ( 0 )˜901 (N) and replacement physical units 902 ( 0 )˜902 (M). If the available physical unit 901(0) is damaged, for example, the available physical unit 901(0) becomes damaged physical unit 903(0), then the replacement physical unit 902(0) can be used to replace the damaged physical unit 903(0) to become Newly Available Solid Elements 901(N+1). At the same time, the number of replacement physical units is reduced by "1", leaving replacement physical units 902(1)-902(M). By continuously replacing a damaged solid element with a replacement solid element, the number of replaced solid elements will be continuously reduced. In this exemplary embodiment, both N and M are positive integers, and M is smaller than N. However, in another exemplary embodiment, M may also be equal to or greater than N.
在本范例实施例中，存储器管理电路702会检测可复写式非易失性存储器模块406的替换实体单元数目。此替换实体单元数目与可复写式非易失性存储器模块406中的至少一替换实体单元的数目有关。此至少一替换实体单元的数目是指可复写式非易失性存储器模块406中的替换实体单元当前的总数。此替换实体单元数目可以是根据可复写式非易失性存储器模块406中的至少一替换实体单元的数目来设定。例如，此替换实体单元数目可以是可复写式非易失性存储器模块406中的至少一替换实体单元的数目本身。例如，若可复写式非易失性存储器模块406中的替换实体单元当前的总数是“5”，则此替换实体单元数目可以是“5”。或者，此替换实体单元数目也可以是根据可复写式非易失性存储器模块406中的至少一替换实体单元的数目来执行一逻辑运算而获得。In this exemplary embodiment, the memory management circuit 702 detects the number of replacement physical units of the rewritable non-volatile memory module 406 . The number of replacement physical units is related to the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 . The number of at least one replacement physical unit refers to the current total number of replacement physical units in the rewritable non-volatile memory module 406 . The number of replacement physical units may be set according to the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 . For example, the number of replacement physical units may be the number itself of at least one replacement physical unit in the rewritable non-volatile memory module 406 . For example, if the current total number of replacement physical units in the rewritable non-volatile memory module 406 is "5", the number of replacement physical units may be "5". Alternatively, the number of replacement physical units can also be obtained by performing a logical operation according to the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 .
存储器管理电路702会判断此替换实体单元数目是否符合一预设条件。例如，存储器管理电路702可以根据此替换实体单元数目来判断可复写式非易失性存储器模块406中的至少一替换实体单元的数目是否符合一预设数目。若可复写式非易失性存储器模块406中的至少一替换实体单元的数目符合此预设数目，存储器管理电路702会判定此替换实体单元数目符合预设条件。在本范例实施例中，此预设数目例如是“0”。也就是说，在本范例实施例中，若可复写式非易失性存储器模块406中所有的替换实体单元的总数等于“0”，存储器管理电路702会检测到可复写式非易失性存储器模块406的替换实体单元数目符合预设条件。反之，若可复写式非易失性存储器模块406中的至少一替换实体单元的数目不符合预设数目，例如，可复写式非易失性存储器模块406中所有的替换实体单元的总数大于“0”，则存储器管理电路702会判定可复写式非易失性存储器模块406的替换实体单元数目不符合预设条件。然而，在另一范例实施例中，此预设数目也可以是大于“0”的任意整数，例如，“1”、“2”、“3”、“4”或者更大，本发明不加以限制。The memory management circuit 702 judges whether the number of physical units to be replaced meets a preset condition. For example, the memory management circuit 702 can determine whether the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 conforms to a preset number according to the number of replacement physical units. If the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 meets the preset number, the memory management circuit 702 determines that the number of replacement physical units meets the preset condition. In this exemplary embodiment, the preset number is, for example, "0". That is to say, in this exemplary embodiment, if the total number of all replacement physical units in the rewritable nonvolatile memory module 406 is equal to “0”, the memory management circuit 702 will detect that the rewritable nonvolatile memory The number of physical units to be replaced in module 406 meets a preset condition. Conversely, if the number of at least one replacement physical unit in the rewritable non-volatile memory module 406 does not meet the preset number, for example, the total number of all replacement physical units in the rewritable non-volatile memory module 406 is greater than " 0", the memory management circuit 702 will determine that the number of replacement physical units of the rewritable non-volatile memory module 406 does not meet the preset condition. However, in another exemplary embodiment, the preset number may also be any integer greater than "0", for example, "1", "2", "3", "4" or greater, and the present invention does not impose limit.
在一范例实施例中，每一个可用实体单元皆可能会对应到(或，映射至)逻辑单元810(0)～810(D)的至少其中之一。可用实体单元的可用容量的总和会等于当前配置的逻辑单元810(0)～810(D)的总容量。若可用实体单元的总数被改变，则逻辑单元810(0)～810(D)的总数及/或总容量也会被对应地改变。例如，若一个可用实体单元被关联为替换实体单元，则逻辑单元810(0)～810(D)的其中之一可能会被舍弃或忽略，从而维持可用实体单元的可用容量与当前配置的逻辑单元的总容量一致。In an exemplary embodiment, each available physical unit may correspond to (or map to) at least one of the logical units 810(0)˜810(D). The sum of the available capacities of the available physical units is equal to the total capacity of the currently configured logical units 810(0)˜810(D). If the total number of available physical units is changed, the total number and/or total capacity of the logical units 810( 0 )˜810(D) will also be correspondingly changed. For example, if an available physical unit is associated as a replacement physical unit, one of the logical units 810(0)-810(D) may be discarded or ignored, thereby maintaining the available capacity of the available physical unit and the currently configured logical The total capacity of the unit is the same.
值得一提的是，在一范例实施例中，若检测到可复写式非易失性存储器模块406的替换实体单元数目符合预设条件，存储器管理电路702并不会将存储器储存装置10宣告为写入保护状态。例如，在检测到可复写式非易失性存储器模块406的替换实体单元数目符合预设条件之后，存储器管理电路702仍然会接收并且处理来自主机系统11的各式操作指令。但是，除了用以从可复写式非易失性存储器模块406中读取数据的读取指令之外，反应于所接收到的其余操作指令，存储器管理电路702皆会回复操作失败消息给主机系统11。It is worth mentioning that, in an exemplary embodiment, if it is detected that the number of replacement physical units of the rewritable non-volatile memory module 406 meets the preset condition, the memory management circuit 702 will not declare the memory storage device 10 as Write protected status. For example, after detecting that the number of replacement physical units of the rewritable non-volatile memory module 406 meets the preset condition, the memory management circuit 702 still receives and processes various operating instructions from the host system 11 . However, except for the read command used to read data from the rewritable non-volatile memory module 406, in response to other received operating commands, the memory management circuit 702 will reply an operation failure message to the host system 11.
根据可复写式非易失性存储器模块406的替换实体单元数目符合预设条件，存储器管理电路702会将可复写式非易失性存储器模块406的可用容量从上述第一可用容量调整为另一可用容量(以下也称为第二可用容量)。在本范例实施例中，第二可用容量小于第一可用容量。According to the number of replacement physical units of the rewritable non-volatile memory module 406 meeting the preset condition, the memory management circuit 702 will adjust the usable capacity of the rewritable non-volatile memory module 406 from the above-mentioned first usable capacity to another Available capacity (hereinafter also referred to as second available capacity). In this exemplary embodiment, the second available capacity is smaller than the first available capacity.
图10是本发明的一范例实施例所示出的调整可复写式非易失性存储器模块的可用容量的示意图。FIG. 10 is a schematic diagram of adjusting the available capacity of a rewritable non-volatile memory module according to an exemplary embodiment of the present invention.
请参照图10，假设储存区802中的替换实体单元已经都被用来替换损坏实体单元1003(0)～1003(M)，则储存区802中剩下可用实体单元1001(0)～1001(N)可以用来储存数据。存储器管理电路702会从可用实体单元1001(0)～1001(N)中选择至少其中之一并且将所选择的可用实体单元关联为新的替换实体单元1002(0)～1002(Q)。此时，储存区802中包含损坏实体单元1003(0)～1003(M)、可用实体单元1001(0)～1001(P)及替换实体单元1002(0)～1002(Q)。P是小于N的正整数。可用实体单元1001(0)～1001(P)的数目与替换实体单元1002(0)～1002(Q)的数目的总和等于可用实体单元1001(0)～1001(N)的数目。在一范例实施例中，替换实体单元1002(0)～1002(Q)的数目等于损坏实体单元1003(0)～1003(M)的数目。然而，在另一范例实施例中，替换实体单元1002(0)～1002(Q)的数目也可以是多于或少于损坏实体单元1003(0)～1003(M)的数目，本发明不加以限制。在产生新的替换实体单元1002(0)～1002(Q)之后，可复写式非易失性存储器模块406即可继续使用，例如，执行数据写入、数据抹除及数据读取操作。此外，可用实体单元1001(0)～1001(P)的数目会少于可用实体单元1001(0)～1001(N)的数目。Please refer to FIG. 10 , assuming that the replacement physical units in the storage area 802 have been used to replace the damaged physical units 1003(0)-1003(M), then the remaining available physical units 1001(0)-1001( N) can be used to store data. The memory management circuit 702 selects at least one of the available physical units 1001(0)˜1001(N) and associates the selected available physical unit as a new replacement physical unit 1002(0)˜1002(Q). At this time, the storage area 802 includes damaged physical units 1003(0)-1003(M), usable physical units 1001(0)-1001(P) and replacement physical units 1002(0)-1002(Q). P is a positive integer smaller than N. The sum of the number of available physical units 1001(0)-1001(P) and the number of replacement physical units 1002(0)-1002(Q) is equal to the number of available physical units 1001(0)-1001(N). In an exemplary embodiment, the number of replacement physical units 1002(0)˜1002(Q) is equal to the number of damaged physical units 1003(0)˜1003(M). However, in another exemplary embodiment, the number of replacement physical units 1002(0)-1002(Q) may also be more or less than the number of damaged physical units 1003(0)-1003(M), the present invention does not be restricted. After generating new replacement physical units 1002(0)˜1002(Q), the rewritable non-volatile memory module 406 can continue to be used, for example, to perform data writing, data erasing and data reading operations. In addition, the number of available physical units 1001(0)˜1001(P) is less than the number of available physical units 1001(0)˜1001(N).
在上述范例实施例中，可用实体单元901(0)～901(N)(或，可用实体单元1001(0)～1001(N))的可用容量的总合可视为上述第一可用容量，并且可用实体单元1001(0)～1001(P)的可用容量的总合可视为上述第二可用容量。因此，第二可用容量会小于第一可用容量。然而，在另一范例实施例中，若替换实体单元的数目过多(例如，替换实体单元的数目多于一阈值)，则部份替换实体单元也可以被作为可用实体单元使用。换言之，此时，第二可用容量会多于第一可用容量。In the above exemplary embodiments, the sum of the available capacities of the available physical units 901(0)-901(N) (or, the available physical units 1001(0)-1001(N)) may be regarded as the above-mentioned first available capacity, And the sum of the available capacity of the available physical units 1001(0)-1001(P) may be regarded as the above-mentioned second available capacity. Therefore, the second available capacity will be smaller than the first available capacity. However, in another exemplary embodiment, if the number of replacement physical units is too large (for example, the number of replacement physical units is greater than a threshold), some of the replacement physical units may also be used as available physical units. In other words, at this time, the second available capacity is greater than the first available capacity.
值得一提的是，在图9与图10的范例实施例中，同一种类型的多个实体抹除单元是被连续排列以便于说明。在另一范例实施例中，不同类型的多个实体抹除单元也可能会是交错排列的。It is worth mentioning that, in the exemplary embodiments of FIG. 9 and FIG. 10 , multiple physical erasing units of the same type are arranged consecutively for the convenience of illustration. In another exemplary embodiment, multiple physical erasing units of different types may also be arranged in a staggered manner.
在将可复写式非易失性存储器模块406的可用容量从第一可用容量调整为第二可用容量之后，存储器管理电路702会提供与此第二可用容量有关的容量信息(以下也称为第二容量信息)给主机系统11。藉此，主机系统11可以根据此第二容量信息来同步更新可复写式非易失性存储器模块406的可用容量。例如，若此第二容量信息指示目前可复写式非易失性存储器模块406的可用容量为“75G”，则主机系统11会纪录下此信息以进行后续对于可复写式非易失性存储器模块406的数据存取管理。After adjusting the available capacity of the rewritable non-volatile memory module 406 from the first available capacity to the second available capacity, the memory management circuit 702 will provide capacity information related to the second available capacity (hereinafter also referred to as the second available capacity) Two capacity information) to the host system 11. Thereby, the host system 11 can synchronously update the available capacity of the rewritable non-volatile memory module 406 according to the second capacity information. For example, if the second capacity information indicates that the current available capacity of the rewritable nonvolatile memory module 406 is "75G", the host system 11 will record this information for subsequent processing of the rewritable nonvolatile memory module. 406 data access management.
在一范例实施例中，存储器管理电路702可以在检测到可复写式非易失性存储器模块406的替换实体单元数目符合预设条件之后的任意时间点执行上述调整可复写式非易失性存储器模块406的可用容量的操作。然而，在另一范例实施例中，在检测到可复写式非易失性存储器模块406的替换实体单元数目符合预设条件之后，存储器管理电路702会等待一个特定的操作指令(以下也称为第一操作指令)。只有在接收到此第一操作指令之后，存储器管理电路702才会执行上述调整可复写式非易失性存储器模块406的可用容量的操作。藉此，可降低在调整可用容量的过程中意外删除掉使用者还需要使用到的数据的风险。In an exemplary embodiment, the memory management circuit 702 may execute the above adjustment of the rewritable nonvolatile memory at any time point after detecting that the number of replacement physical units of the rewritable nonvolatile memory module 406 meets a preset condition. Module 406 is the operation of available capacity. However, in another exemplary embodiment, after detecting that the number of replacement physical units of the rewritable non-volatile memory module 406 meets a preset condition, the memory management circuit 702 will wait for a specific operation instruction (hereinafter referred to as first operating instruction). Only after receiving the first operation instruction, the memory management circuit 702 will perform the above operation of adjusting the available capacity of the rewritable non-volatile memory module 406 . In this way, the risk of accidentally deleting data that the user still needs to use during the process of adjusting the available capacity can be reduced.
在一范例实施例中，存储器管理电路702会从主机系统11接收第一操作指令。例如，此第一操作指令可以是格式化操作指令。此外，此第一操作指令还可以是任意预先设定的操作指令，本发明不加以限制。存储器管理电路702会根据此第一操作指令来执行上述调整可复写式非易失性存储器模块406的可用容量的操作。根据此第一操作指令，存储器管理电路702还会回复对应于第一操作指令的操作失败消息。例如，存储器管理电路702可以回复程序化操作失败消息，藉以告知主机系统11其所欲执行的程序化操作失败。此外，在一范例实施例中，此操作失败消息也可以告知重新连接(或，重新插入)存储器储存装置10等消息。In an exemplary embodiment, the memory management circuit 702 receives a first operation command from the host system 11 . For example, the first operation instruction may be a formatting operation instruction. In addition, the first operation instruction may also be any preset operation instruction, which is not limited in the present invention. The memory management circuit 702 performs the above operation of adjusting the available capacity of the rewritable non-volatile memory module 406 according to the first operation instruction. According to the first operation instruction, the memory management circuit 702 will also reply an operation failure message corresponding to the first operation instruction. For example, the memory management circuit 702 may reply a programming operation failure message, so as to inform the host system 11 that the programming operation it intends to execute fails. In addition, in an exemplary embodiment, the operation failure message may also notify a message of reconnecting (or reinserting) the memory storage device 10 and the like.
在一范例实施例中，存储器管理电路702可以在将可复写式非易失性存储器模块406的可用容量从第一可用容量调整为第二可用容量之后的任意时间点提供第二容量信息给主机系统11。例如，提供第二容量信息给主机系统11的操作可以是由存储器管理电路702主动执行或者反应于来自主机系统11的一容量查询指令而被动执行。然而，在另一范例实施例中，在将可复写式非易失性存储器模块406的可用容量从第一可用容量调整为第二可用容量之后，存储器管理电路702会等待存储器储存装置10或可复写式非易失性存储器模块406被重新上电(例如，被重新开机、被重新电性连接至主机系统11或被重新插入至主机系统11)。只有在存储器储存装置10或可复写式非易失性存储器模块406被重新上电之后，存储器管理电路702才会提供第二容量信息给主机系统11。例如，提供第二容量信息给主机系统11的操作可以是在存储器储存装置10或可复写式非易失性存储器模块406被重新上电之后由存储器管理电路702主动执行或者反应于来自主机系统11的容量查询指令而被动执行。此外，在另一范例实施例中，在将可复写式非易失性存储器模块406的可用容量从第一可用容量调整为第二可用容量之后，存储器管理电路702也可以执行断电上电模拟操作，以模拟使用者插拔存储器储存装置10的动作。根据此断电上电模拟操作，主机系统11可能会识别存储器储存装置10或可复写式非易失性存储器模块406被重新上电。在执行此断电上电模拟操作之后，存储器管理电路702可主动或被动执行上述提供第二容量信息给主机系统11的操作。In an exemplary embodiment, the memory management circuit 702 may provide the second capacity information to the host at any time point after adjusting the available capacity of the rewritable non-volatile memory module 406 from the first available capacity to the second available capacity System 11. For example, the operation of providing the second capacity information to the host system 11 may be actively performed by the memory management circuit 702 or passively performed in response to a capacity query command from the host system 11 . However, in another exemplary embodiment, after adjusting the available capacity of the rewritable non-volatile memory module 406 from the first available capacity to the second available capacity, the memory management circuit 702 waits for the memory storage device 10 or the The flash-over non-volatile memory module 406 is powered back on (eg, rebooted, electrically reconnected to, or reinserted into the host system 11 ). The memory management circuit 702 will provide the second capacity information to the host system 11 only after the memory storage device 10 or the rewritable non-volatile memory module 406 is powered on again. For example, the operation of providing the second capacity information to the host system 11 may be performed actively by the memory management circuit 702 after the memory storage device 10 or the rewritable non-volatile memory module 406 is powered on again or in response to a response from the host system 11. The capacity query command is executed passively. In addition, in another exemplary embodiment, after adjusting the available capacity of the rewritable non-volatile memory module 406 from the first available capacity to the second available capacity, the memory management circuit 702 can also perform a power-off and power-on simulation The operation is to simulate the action of the user plugging and unplugging the memory storage device 10 . According to the power-off and power-on simulation operation, the host system 11 may recognize that the memory storage device 10 or the rewritable non-volatile memory module 406 is powered on again. After performing the power-off and power-on simulation operation, the memory management circuit 702 may actively or passively perform the above-mentioned operation of providing the second capacity information to the host system 11 .
在一范例实施例中，在将第二容量信息提供给主机系统11之后，存储器管理电路702会等待另一个特定的操作指令(以下也称为第二操作指令)。例如，此第二操作指令可以是格式化操作指令。例如，此第二操作指令可带有与格式化可复写式非易失性存储器模块406有关的消息，例如，要将可复写式非易失性存储器模块406格式化成哪一种格式及/或要使用哪一种格式化模式来进行格式化等消息。存储器管理电路702会接收此第二操作指令。存储器管理电路702会根据此第二操作指令发送格式化操作指令序列以指示格式化可复写式非易失性存储器模块406。格式化后的可复写式非易失性存储器模块406会具有上述第二可用容量。例如，以图10的范例实施例为例，第二可用容量是指可用实体单元1001(0)～1001(P)的可用容量的总合，故可复写式非易失性存储器模块406会根据此格式化操作指令序列来抹除可用实体单元1001(0)～1001(P)。在将可复写式非易失性存储器模块406格式化之后，存储器储存装置10即可正常地继续被使用。例如，以图10的范例实施例为例，在存储器储存装置10后续的使用过程中，替换实体单元1002(0)～1002(Q)可以被用来替换可用实体单元1001(0)～1001(P)中损坏的可用实体单元。In an exemplary embodiment, after providing the second capacity information to the host system 11 , the memory management circuit 702 waits for another specific operation command (hereinafter also referred to as a second operation command). For example, the second operation instruction may be a formatting operation instruction. For example, the second operation instruction may carry information related to formatting the rewritable nonvolatile memory module 406, for example, which format and/or the rewritable nonvolatile memory module 406 is to be formatted Which formatting mode to use for formatting etc. messages. The memory management circuit 702 receives the second operation instruction. The memory management circuit 702 sends a format operation instruction sequence according to the second operation instruction to instruct to format the rewritable non-volatile memory module 406 . The formatted rewritable non-volatile memory module 406 will have the above-mentioned second available capacity. For example, taking the exemplary embodiment of FIG. 10 as an example, the second available capacity refers to the total available capacity of the available physical units 1001(0)-1001(P), so the rewritable non-volatile memory module 406 will The formatting operation instruction sequence is used to erase the available physical units 1001(0)˜1001(P). After the rewritable non-volatile memory module 406 is formatted, the memory storage device 10 can continue to be used normally. For example, taking the exemplary embodiment of FIG. 10 as an example, during the subsequent use of the memory storage device 10, the replacement physical units 1002(0)-1002(Q) can be used to replace the available physical units 1001(0)-1001( Corrupted usable solid elements in P).
在一范例实施例中，上述调整可复写式非易失性存储器模块406的可用容量的操作可以被重复执行，以持续延长存储器储存装置10的使用寿命。在另一范例实施例中，也可以设定一个调整次数阈值及/或一个容量下限。若已经执行过的调整可复写式非易失性存储器模块406的可用容量的操作的次数达到此调整次数阈值，及/或调整后的第二可用容量小于或等于此容量下限，则禁止执行下一次的容量调整操作(即，上述调整可复写式非易失性存储器模块406的可用容量的操作)。In an exemplary embodiment, the above operation of adjusting the usable capacity of the rewritable non-volatile memory module 406 may be performed repeatedly, so as to continuously prolong the service life of the memory storage device 10 . In another exemplary embodiment, an adjustment times threshold and/or a capacity lower limit may also be set. If the number of operations for adjusting the available capacity of the rewritable non-volatile memory module 406 that has been performed reaches the adjustment times threshold, and/or the adjusted second available capacity is less than or equal to the lower limit of the capacity, then execution of the next step is prohibited. One capacity adjustment operation (ie, the above-mentioned operation of adjusting the available capacity of the rewritable non-volatile memory module 406 ).
图11是本发明的一范例实施例所示出的存储器管理方法的流程图。FIG. 11 is a flowchart of a memory management method shown in an exemplary embodiment of the present invention.
请参照图11，在步骤S1101中，提供与可复写式非易失性存储器模块的第一可用容量有关的第一容量信息给主机系统。在步骤S1102中，判断可复写式非易失性存储器模块中的替换实体单元的数目是否符合预设数目。若可复写式非易失性存储器模块中的替换实体单元的数目不符合预设数目，步骤S1102可被重复执行。若可复写式非易失性存储器模块中的替换实体单元的数目符合预设数目，在步骤S1103中，判断是否接收到第一操作指令。例如，此第一操作指令可以是程序化操作指令。若没有接收到第一操作指令，步骤S1103可被重复执行。若有接收到第一操作指令，在步骤S1104中，将可复写式非易失性存储器模块的可用容量从第一可用容量调整为第二可用容量并回复对应于第一操作指令的操作失败消息。Referring to FIG. 11 , in step S1101 , first capacity information related to the first available capacity of the rewritable non-volatile memory module is provided to the host system. In step S1102, it is determined whether the number of replacement physical units in the rewritable non-volatile memory module meets a preset number. If the number of replacement physical units in the rewritable non-volatile memory module does not meet the preset number, step S1102 may be executed repeatedly. If the number of replacement physical units in the rewritable non-volatile memory module meets the preset number, in step S1103, it is determined whether a first operation command is received. For example, the first operation instruction may be a programmed operation instruction. If the first operation instruction is not received, step S1103 may be executed repeatedly. If the first operation instruction is received, in step S1104, the available capacity of the rewritable non-volatile memory module is adjusted from the first available capacity to the second available capacity and an operation failure message corresponding to the first operation instruction is replied .
在步骤S1105中，提供与可复写式非易失性存储器模块的第二可用容量有关的第二容量信息给主机系统。值得一提的是，在另一范例实施例中，步骤S1105是在存储器储存装置或可复写式非易失性存储器模块被实际的插拔或模拟插拔之后才执行。例如，若存储器储存装置或可复写式非易失性存储器模块没有被实际的插拔或被模拟插拔，则步骤S1106可能不会被执行。In step S1105, second capacity information related to the second available capacity of the rewritable non-volatile memory module is provided to the host system. It is worth mentioning that, in another exemplary embodiment, step S1105 is performed after the memory storage device or the rewritable non-volatile memory module is actually plugged or plugged in or simulated. For example, if the memory storage device or the rewritable non-volatile memory module is not actually inserted or removed or simulated, step S1106 may not be executed.
在步骤S1106中，判断是否接收到第二操作指令。例如，此第二操作指令可以是程序化操作指令。若没有接收到第二操作指令，步骤S1106可以被重复执行。若有接收到第二操作指令，在步骤S1107中，发送格式化操作指令序列以指示格式化可复写式非易失性存储器模块。在步骤S1107之后，步骤S1102可被重复执行。In step S1106, it is determined whether a second operation instruction is received. For example, the second operation instruction may be a programmed operation instruction. If the second operation instruction is not received, step S1106 may be executed repeatedly. If the second operation instruction is received, in step S1107, send a format operation instruction sequence to instruct to format the rewritable non-volatile memory module. After step S1107, step S1102 may be executed repeatedly.
然而，图11中各步骤已详细说明如上，在此便不再赘述。值得注意的是，图11中各步骤可以实作为多个程序码或是电路，本发明不加以限制。此外，图11的方法可以搭配以上范例实施例使用，也可以单独使用，本发明不加以限制。However, each step in FIG. 11 has been described in detail above, and will not be repeated here. It should be noted that each step in FIG. 11 can be implemented as a plurality of program codes or circuits, which is not limited in the present invention. In addition, the method in FIG. 11 can be used in conjunction with the above exemplary embodiments, or can be used alone, which is not limited by the present invention.
综上所述，本发明会在检测到可复写式非易失性存储器模块的替换实体单元数目符合某一个预设条件时，调整可复写式非易失性存储器模块的可用容量。此外，本发明可通过适当的方式来将调整后的可用容量同步至主机系统。藉此，除了可确保主机系统与存储器储存装置的容量信息可同步更新之外，还可延长存储器储存装置的使用寿命。To sum up, the present invention adjusts the available capacity of the rewritable nonvolatile memory module when it detects that the number of replacement physical units of the rewritable nonvolatile memory module meets a certain preset condition. In addition, the present invention can synchronize the adjusted available capacity to the host system in an appropriate manner. In this way, in addition to ensuring that the capacity information of the host system and the memory storage device can be updated synchronously, the service life of the memory storage device can also be extended.
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
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| CN201510295063.9ACN106297896B (en) | 2015-06-02 | 2015-06-02 | Memory management method, memory storage device and memory control circuit unit |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510295063.9ACN106297896B (en) | 2015-06-02 | 2015-06-02 | Memory management method, memory storage device and memory control circuit unit |
| Publication Number | Publication Date |
|---|---|
| CN106297896Atrue CN106297896A (en) | 2017-01-04 |
| CN106297896B CN106297896B (en) | 2019-06-14 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510295063.9AActiveCN106297896B (en) | 2015-06-02 | 2015-06-02 | Memory management method, memory storage device and memory control circuit unit |
| Country | Link |
|---|---|
| CN (1) | CN106297896B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI692722B (en)* | 2017-12-08 | 2020-05-01 | 日商東芝記憶體股份有限公司 | Information processing device, method and program executed by the information processing device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200837551A (en)* | 2007-03-02 | 2008-09-16 | A Data Technology Co Ltd | Storage device capable of cooperating to adjust reliability, method for establishing and input data thereof |
| US20090046512A1 (en)* | 2007-08-17 | 2009-02-19 | Munif Farhan Halloush | Reliability System for Use with Non-Volatile Memory Devices |
| CN103984635A (en)* | 2013-02-08 | 2014-08-13 | 群联电子股份有限公司 | Data writing method, memory controller and memory storage device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200837551A (en)* | 2007-03-02 | 2008-09-16 | A Data Technology Co Ltd | Storage device capable of cooperating to adjust reliability, method for establishing and input data thereof |
| US20090046512A1 (en)* | 2007-08-17 | 2009-02-19 | Munif Farhan Halloush | Reliability System for Use with Non-Volatile Memory Devices |
| CN103984635A (en)* | 2013-02-08 | 2014-08-13 | 群联电子股份有限公司 | Data writing method, memory controller and memory storage device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI692722B (en)* | 2017-12-08 | 2020-05-01 | 日商東芝記憶體股份有限公司 | Information processing device, method and program executed by the information processing device |
| Publication number | Publication date |
|---|---|
| CN106297896B (en) | 2019-06-14 |
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