Background technology
Display panels (liquid crystal display, LCD) has that image quality is good, volume is little, lightweight, low driveGalvanic electricity pressure, low-power consumption, the advantage that radiationless and manufacturing cost is relatively low, occupy an leading position in flat display field.Liquid crystalShow colored filter substrate and thin-film transistor array base-plate that panel includes being oppositely arranged and be interposed in liquid between the twoCrystal layer.
Generally, when user is from the screen of different visual angle viewing display panels, the brightness of image can be withThe increase at visual angle and reduce.The display panels of traditional twisted nematic (Twisted Nematic, TN), common electricalPole is respectively formed at pixel electrode on upper and lower two different substrates, and liquid crystal molecule is a plane inward turning vertical with substrateTurn.But, the visual angle of TN type display panels is narrow.For realizing wide viewing angle, use the plane inner switching type of horizontal component of electric field(In-Plane Switching, IPS) and fringe field switch type (the Fringe Field of employing fringe fieldSwitching, FFS) display panels be developed.For IPS type or the display panels of FFS type, common electricalPole and pixel electrode are formed on same substrate (i.e. thin-film transistor array base-plate), and liquid crystal molecule is almost parallel with substratePlane in rotate thus obtain wider array of visual angle.
In the prior art, it will usually on colored filter substrate, make ITO (Indium Tin Oxide, Indium sesquioxide.Stannum) layer, this ITO layer electrically conducts with the public electrode on array base palte, to eliminate exterior static to IPS, FFS type liquid crystal displayThe impact of panel, prevents electrostatic moire (Mura) phenomenon.
But, in this approach, owing to the ITO layer on colored filter substrate is led with the public electrode on array base palteIt is logical so that between ITO layer and the pixel electrode on array base palte on colored filter substrate, to there is stronger vertical electric field,Liquid crystal molecule is planar rotated there is certain inhibitory action so that when the penetrance reduction of display panels, responseBetween elongate.
Chinese patent application the 201130241819.3rd i.e. discloses a kind of colored filter substrate, including: substrate, screenCover electrode, black matrix, color film layer and planarization layer；Bucking electrode is arranged at the medial surface of substrate；Black matrix is arranged at shieldingThe non-tight glue region of base part；Color film floor is arranged at the district that the medial surface of substrate is not covered by black matrix and bucking electrodeTerritory；Planarization layer is arranged at color film layer and the lower section of black matrix and covers black matrix and color film layer.This bucking electrode can in caseThe only generation of electrostatic, and this bucking electrode uses pattern structure, staggers up and down with pixel electrode, make this bucking electrode withThe position hollow out that pixel electrode is corresponding, reduces the vertical electric field between bucking electrode and pixel electrode, beneficially raising and wearsRate and shortening response time, reduce saturation voltage and reduce power consumption thoroughly.
But, above-mentioned colored filter substrate still suffers from problems with:
(1), bucking electrode be formed between substrate and black matrix, be not provided with black matrix in applying paste region, butThe pattern being provided with bucking electrode, black matrix and bucking electrode is incomplete same, causes needs to increase the light making bucking electrodeCover, need sputtering, light blockage coating, expose, develop, etch, the manufacturing process of removing photoresistance, extend the time of whole processing procedure, makeObtain cost to be greatly improved；
(2), bucking electrode make be formed at black matrix before because bucking electrode is transparency electrode, then doing black squareDuring battle array, the para-position between black matrix and bucking electrode can be problematic；
(3), black matrix to excavate in fluid sealant region, if fluid sealant coating accuracy is bad, it is likely that causes leakage occurOptical issue.
Summary of the invention
It is an object of the invention to provide a kind of colored filter substrate and manufacture method, to solve existing colored filterSubstrate is when arranging bucking electrode, and processing procedure is complicated, cost high and the problem that there is para-position and light leak.
The embodiment of the present invention provides a kind of colored filter substrate, and including substrate, the side of this substrate is provided with color blocking layer, blackMatrix and bucking electrode, this bucking electrode is made of an electrically conducting material, this colored filter substrate have viewing area and be positioned at this showShowing the non-display area of district's circumferential periphery, this bucking electrode is respectively provided with complete phase with this black matrix in this viewing area and this non-display areaWith pattern, this bucking electrode upper and lower with this black matrix bonded to each other contact and completely overlapped together.
Further, this color blocking layer and this black matrix are formed on the surface of this substrate side, and this bucking electrode is arranged onBelow this black matrix.
Further, this color blocking layer and this black matrix are formed on the surface of this substrate side, and this bucking electrode is arranged onBelow this black matrix, below this bucking electrode, also overlap is provided with another layer of black matrix.
Further, this color blocking layer and this bucking electrode are formed on the surface of this substrate side, and this black matrix is arranged onBelow this bucking electrode.
The embodiment of the present invention also provides for a kind of display panels, is oppositely arranged with this first substrate including first substrateSecond substrate and liquid crystal layer between this first substrate and this second substrate, this first substrate is above-mentioned colored filterLight plate base, this second substrate is thin-film transistor array base-plate, and this second substrate is provided with public electrode and pixel electrode, shouldBucking electrode on first substrate and the public electrode on this second substrate are conducted electricity up and down by conducting resinl and are connected, wherein this conductionGlue is conductively connected with the side surface of this bucking electrode.
The embodiment of the present invention also provides for the manufacture method of a kind of colored filter substrate, and the side being included in substrate makes shapeQuality resistance layer, black matrix and bucking electrode, this bucking electrode is made of an electrically conducting material, and this colored filter substrate has viewing areaBe positioned at the non-display area of this viewing area circumferential periphery, wherein in this viewing area and this is non-display for this bucking electrode and this black matrixDistrict is respectively provided with identical pattern, this bucking electrode upper and lower with this black matrix bonded to each other contact and completely overlapped together.
Wherein in an embodiment, this manufacture method specifically includes:
One layer of BM negativity photoresist layer of coating over the substrate；
This BM negativity photoresist layer is coated with one layer of positivity photoresist layer；
Utilize the BM light shield making this black matrix that this positivity photoresist layer is exposed；
This positivity photoresist layer through overexposure is developed, removes and be exposed this positivity photoresist layer of position and exposedOptical position exposes this BM negativity photoresist layer；
This positivity photoresist layer with this BM negativity photoresist layer exposed deposit layer of conductive material layer；
Being etched this conductive material layer, the side making this conductive material layer cover this positivity photoresist layer is possible to determine when the sample has been completely etchedFall；
Stripping removes this positivity photoresist layer, removes this conductive material layer covered in this positivity photoresist layer front, only simultaneouslyThis conductive material layer is retained as this bucking electrode being exposed position；
This BM negativity photoresist layer is developed, only retains this BM negativity photoresist layer as this black square being exposed positionBattle array.
In another embodiment, this manufacture method specifically includes:
One layer of BM negativity photoresist layer of coating over the substrate；
This BM negativity photoresist layer deposits layer of conductive material layer；
This conductive material layer is coated with one layer of negativity photoresist layer；
Utilize the BM light shield making this black matrix that this negativity photoresist layer is exposed；
This negativity photoresist layer through overexposure is developed, removes and be not exposed this negativity photoresist layer of position and notIt is exposed position and exposes this conductive material layer；
It is etched removing to this conductive material layer exposed, only retains this conductive material layer as this being exposed positionBucking electrode；
Stripping removes this negativity photoresist layer；
This BM negativity photoresist layer is developed, only retains this BM negativity photoresist layer as this black square being exposed positionBattle array.
In yet another embodiment, this manufacture method specifically includes:
Coating ground floor BM negativity photoresist layer over the substrate；
This BM negativity photoresist layer deposits layer of conductive material layer；
This conductive material layer is coated with second layer BM negativity photoresist layer；
Utilize the BM light shield making this black matrix that this second layer BM negativity photoresist layer is exposed；
This second layer BM negativity photoresist layer through overexposure is developed, removes this second layer BM not being exposed positionNegativity photoresist layer also exposes this conductive material layer not being exposed position, the most only retains this second layer BM and bears being exposed positionProperty photoresist layer is as wherein one layer of this black matrix；
This conductive material layer exposed is etched removing and exposing this ground floor BM negativity photoresist layer of lower section, only existsIt is exposed position and retains this conductive material layer as this bucking electrode；
This ground floor BM negativity photoresist layer is developed, only retains this ground floor BM negativity photoresist layer being exposed positionAs this black matrix of another layer.
In yet another embodiment, this manufacture method specifically includes:
Deposition layer of conductive material layer over the substrate；
This conductive material layer is coated with one layer of BM negativity photoresist layer；
Utilize the BM light shield making this black matrix that this BM negativity photoresist layer is exposed；
This BM negativity photoresist layer through overexposure is developed, removes and be not exposed this BM negativity photoresist layer of position alsoExpose this conductive material layer not being exposed position, the most only retain this BM negativity photoresist layer as this black square being exposed positionBattle array；
It is etched removing to this conductive material layer exposed, only retains this conductive material layer as this being exposed positionBucking electrode.
The colored filter substrate of embodiment of the present invention offer and manufacture method, arranged in the inner side of colored filter substrateHaving bucking electrode, it is possible to achieve electrostatic screen, bucking electrode uses pattern structure, staggers up and down with pixel electrode, reducesVertical electric field between bucking electrode and pixel electrode, is conducive to improving penetrance and shortening response time, reduces saturation voltageWith reduction power consumption.And bucking electrode is identical with periphery non-display area in viewing area, center with the pattern of black matrix, permissibleA light shield single exposure is utilized to make while realizing black matrix and bucking electrode, it is not necessary to increase the light making bucking electrodeCover.As such, it is possible to simplification operation, thus save processing time, and reduce production cost.Owing to utilizing a light shield once to exposeLight makes while realizing black matrix and bucking electrode, the most there is not alignment issues when making black matrix and bucking electrode.
The embodiment of the present invention is at the frame glue dispensing area of this display panels periphery, and black matrix can not excavate, black squareThe area that battle array extends is identical with bucking electrode, and conducting resinl can turn on bucking electrode from the side surface of bucking electrode, will notThe light leak because fluid sealant coating is bad.And the bucking electrode on colored filter substrate is by conducting resinl and thin film transistor (TFT)Public electrode conducting on array base palte connects, it is also possible to avoid the occurrence of dark-state leakage problem.
Detailed description of the invention
By further illustrating the technical approach and effect that the present invention taked by reaching predetermined goal of the invention, below in conjunction withDrawings and Examples, detailed description of the invention, structure, feature and the effect thereof to the present invention, after describing in detail such as.
Fig. 1 is the structural representation of display panels in first embodiment of the invention, please join Fig. 1, this LCDPlate includes second substrate 12 that first substrate 11 and first substrate 11 be oppositely arranged and is positioned at first substrate 11 and secondLiquid crystal layer 13 between substrate 12.First substrate 11 is colored filter substrate, and second substrate 12 is thin film transistor (TFT) array basePlate.
The display panels that the present embodiment provides is applicable to plane inner switching type (IPS), fringe field switch type (FFS)The display panels of isotype, public electrode and pixel electrode are both formed in same substrate (i.e. thin-film transistor array base-plate)On, when applying the electric field of display between public electrode and pixel electrode, liquid crystal molecule is in the plane almost parallel with substrateInterior rotation is to obtain wider visual angle.In the present embodiment, as a example by fringe field switch type (FFS), this display panels is enteredRow explanation.
It is to be understood that ground, in the present invention, first substrate 11 and second substrate 12 has been diagrammatically only by related to the present inventionPart film Rotating fields, is then omitted other film layer structure.
First substrate 11 (i.e. colored filter substrate) has viewing area A and is positioned at the non-display of viewing area A circumferential peripheryDistrict B, first substrate 11 includes the first substrate 110, and the first substrate 110 sets on the surface (i.e. outer surface) of liquid crystal layer 13 side dorsadThere is the first polaroid 111.Second substrate 12 includes the second substrate 120, and the second substrate 120 is on the surface of liquid crystal layer 13 side dorsad(i.e. outer surface) is provided with the second polaroid 121, the first polaroid 111 and the light transmission shaft direction (not shown) of the second polaroid 121It is mutually perpendicular to.
First substrate 110 be provided with near liquid crystal layer 13 side color blocking layer 112, black matrix 113 (black matrix,BM), bucking electrode 114 and flatness layer 115.Bucking electrode 114 has been respectively provided with at viewing area A and non-display area B with black matrix 113Exactly the same pattern, bucking electrode 114 is bonded to each other with black matrix about 113 contact and completely overlapped together.The present embodimentIn, color blocking layer 112 and black matrix 113 are formed at the first substrate 110 on the surface (i.e. inner surface) of liquid crystal layer 13 side, screenCovering electrode 114 and be arranged on below black matrix 113, flatness layer 115 covers color blocking layer 112 and bucking electrode 114.
Fig. 2 is the electrical block diagram of the second substrate of display panels in Fig. 1, incorporated by reference to Fig. 1 and Fig. 2, secondSubstrate 120 is being provided with scan line 122, data wire 123, thin film transistor (TFT) (TFT) 124, public electrode near liquid crystal layer 13 side125 (common electrode), insulating barrier 126 and pixel electrode 127 (pixel electrode).
As in figure 2 it is shown, multi-strip scanning line 122 and a plurality of data lines 123 intersect, restriction forms multiple sub-pixel SP(sub-pixel).Sub-pixel SP for example, red (R), green (G) or blue (B) sub-pixel, multiple adjacent sub-pixel SP structuresBecome display pixel (pixel).Such as one display pixel can include redness (R), green (G) and blue (B) three sub-picturesElement SP.Being provided with pixel electrode 127 and thin film transistor (TFT) (TFT) 124 in each sub-pixel SP, thin film transistor (TFT) 124 is positioned at scanningNear the position that line 122 and data wire 123 intersect.Each thin film transistor (TFT) 124 includes grid, source electrode and drain electrode (not shown),The scan line 122 that wherein grid electrical connection is corresponding, the data wire 123 that source electrode is corresponding with one of drain electrode electrical connection, source electrode and drain electrodePixel electrode 127 corresponding to another electrical connection, the data wire 123 that such as source electrode electrical connection is corresponding, drain electrode electrical connection is correspondingPixel electrode 127.
In the present embodiment, pixel electrode 127 is positioned at above public electrode 125, is provided with insulating barrier 126 between the two, but notIt is limited to this.In other embodiments, pixel electrode 127 can also be positioned at below public electrode 125, and i.e. pixel electrode 127 is with publicCommon electrode 125 transposition.It addition, when using the display panels of plane inner switching type (IPS), pixel electrode 127 HePublic electrode 125 may be located in same layer and mutually insulated, now in each sub-pixel SP, and pixel electrode 127 and public affairsCommon electrode 125 can be respectively prepared to be had the pectinate texture of multiple electrode strip and is mutually inserted cooperation.
Above-mentioned bucking electrode 114, public electrode 125 can use ITO (tin indium oxide), IZO with pixel electrode 127Transparent conductive materials such as (indium zinc oxides) is made.It addition, bucking electrode 114 is owing to overlapping with black matrix 113 and being positioned at everyThe shading region of individual sub-pixel SP surrounding, therefore bucking electrode 114 can also use the opaque conductive materials such as metal to make.
As it is shown in figure 1, the non-display area B at this colored filter substrate leads between bucking electrode 114 and public electrode 125Cross conducting resinl 14 conduction to be connected, conducting resinl 14 be such as formed at by the way of an elargol bucking electrode 114 outside and with shieldingThe side surface of electrode 114 is conductively connected, so without offering the perforation accommodating conducting resinl 14 on flatness layer 115, and no matterBucking electrode 114 is provided in above or below black matrix 113, does not the most affect conducting resinl 14 and realizes side with bucking electrode 114It is conductively connected.This display panels also includes drive circuit 15, and this display panels, when display, is carried by drive circuit 15Voltage supplied signal is to the public electrode 125 of second substrate 12, and this voltage signal is supplied to first substrate 11 by conducting resinl 14 againBucking electrode 114.
Fig. 3 is the structural representation of display panels in second embodiment of the invention, please join Fig. 3, and the present embodiment is with upperState differring primarily in that of first embodiment, in the present embodiment, below bucking electrode 114, also overlap with another layer of black matrix 113,I.e. bucking electrode 114 is folded between two-layer black matrix 113, and bucking electrode 114 and two-layer black matrix 113 are at viewing area A and non-Viewing area B is respectively provided with identical pattern, and bucking electrode 114 is bonded to each other with two-layer black matrix about 113 to be contacted and completeOverlap.About other structures of the present embodiment, can be found in above-mentioned first embodiment, do not repeat them here.
Fig. 4 is the structural representation of display panels in third embodiment of the invention, please join Fig. 4, and the present embodiment is with upperStating differring primarily in that of first embodiment, in the present embodiment, color blocking layer 112 and bucking electrode 114 are formed at first substrate 11On the surface (i.e. inner surface) of liquid crystal layer 13 side, black matrix 113 is arranged on below bucking electrode 114, and flatness layer 115 coversLid color blocking layer 112 and black matrix 113.I.e. the present embodiment is compared to above-mentioned first embodiment, black matrix 113 and bucking electrode 114Order exchanged.In the present embodiment, bucking electrode 114 is made according to metal material, then the first polaroid 111 is preferredUse anti-reflective polarizing plate, affect display effect to avoid bucking electrode 114 ambient light to external world of metal material to produce reflectionReally.About other structures of the present embodiment, can be found in above-mentioned first embodiment, do not repeat them here.
In the present invention, owing to the figure of bucking electrode 114 and black matrix 113 is completely the same and overlapped, can shareThe light shield (hereinafter referred to as " BM light shield ") of existing making black matrix 113 makes bucking electrode 114 simultaneously, i.e. shares BM exposureEngineering, it is achieved one light shield single exposure, makes black matrix 113 and bucking electrode 114 simultaneously.
Fig. 5 a to Fig. 5 h is the step schematic diagram of a kind of manufacture method of colored filter substrate in Fig. 1, please join Fig. 5 a extremelyFig. 5 h, the making step in this example is specific as follows:
Such as Fig. 5 a, the first substrate 110 is coated with one layer of BM negativity photoresist layer 113a；
Such as Fig. 5 b, this BM negativity photoresist layer 113a is coated with one layer of positivity photoresist layer 21；
Such as Fig. 5 c, utilize the BM light shield 30 (planar structure of this BM light shield 30 is as shown in Figure 9) making this black matrix 113 rightThis positivity photoresist layer 21 is exposed；
Such as Fig. 5 d, this positivity photoresist layer 21 through overexposure is developed, remove this positivity photoresistance being exposed positionLayer 21 also exposes this BM negativity photoresist layer 113a being exposed position；
Such as Fig. 5 e, by modes such as magnetron sputterings on this positivity photoresist layer 21 and this BM negativity photoresist layer 113a of exposingDeposition layer of transparent (such as ITO, IZO) or the conductive material layer 114a of opaque (such as metal)；
Such as Fig. 5 f, this conductive material layer 114a is etched, makes this conductive material layer 114a cover this positivity photoresist layerThe side of 21 is now completely etched away；
Such as Fig. 5 g, peel off and remove this positivity photoresist layer 21, remove to cover simultaneously and lead at this of this positivity photoresist layer 21 frontMaterial layer 114a, only retains this conductive material layer 114a as this bucking electrode 114 being exposed position；
Such as Fig. 5 h, this BM negativity photoresist layer 113a is developed, only retain this BM negativity photoresist layer being exposed position113a is as this black matrix 113.
Fig. 6 a to Fig. 6 h is the step schematic diagram of the another kind of manufacture method of colored filter substrate in Fig. 1, please join Fig. 6 aTo Fig. 6 h, the making step in this example is specific as follows:
Such as Fig. 6 a, the first substrate 110 is coated with one layer of BM negativity photoresist layer 113a；
Such as Fig. 6 b, on this BM negativity photoresist layer 113a by the modes such as magnetron sputtering deposit layer of transparent (such as ITO,Or the conductive material layer 114a of opaque (such as metal) IZO)；
Such as Fig. 6 c, this conductive material layer 114a is coated with one layer of negativity photoresist layer 22；
Such as Fig. 6 d, utilize the BM light shield 30 (planar structure of this BM light shield 30 is as shown in Figure 9) making this black matrix 113 rightThis negativity photoresist layer 22 is exposed；
Such as Fig. 6 e, this negativity photoresist layer 22 through overexposure is developed, remove this negativity light not being exposed positionResistance layer 22 also exposes this conductive material layer 114a not being exposed position；
Such as Fig. 6 f, it is etched removing to this conductive material layer 114a exposed, only retains this conduction being exposed positionMaterial layer 114a is as this bucking electrode 114；
Such as Fig. 6 g, peel off and remove this negativity photoresist layer 22；
Such as Fig. 6 h, this BM negativity photoresist layer 113a is developed, only retain this BM negativity photoresist layer being exposed position113a is as this black matrix 113.
Fig. 7 a to Fig. 7 g is the step schematic diagram of a kind of manufacture method of colored filter substrate in Fig. 3, please join Fig. 7 a extremelyFig. 7 g, the making step in this example is specific as follows:
Such as Fig. 7 a, the first substrate 110 is coated with ground floor BM negativity photoresist layer 113a；
Such as Fig. 7 b, this ground floor BM negativity photoresist layer 113a deposits layer of transparent (example by modes such as magnetron sputteringsSuch as ITO, IZO) or the conductive material layer 114a of opaque (such as metal)；
Such as Fig. 7 c, this conductive material layer 114a is coated with second layer BM negativity photoresist layer 113a；
Such as Fig. 7 d, utilize the BM light shield 30 (planar structure of this BM light shield 30 is as shown in Figure 9) making this black matrix 113 rightThis second layer BM negativity photoresist layer 113a is exposed；
Such as Fig. 7 e, this second layer BM negativity photoresist layer 113a through overexposure is developed, removes and be not exposed positionThis second layer BM negativity photoresist layer 113a and expose this conductive material layer 114a not being exposed position, be only exposed simultaneouslyPosition retains this second layer BM negativity photoresist layer 113a as wherein one layer of this black matrix 113；
Such as Fig. 7 f, this conductive material layer 114a exposed is etched removing and exposing this ground floor BM negativity of lower sectionPhotoresist layer 113a, only retains this conductive material layer 114a as this bucking electrode 114 being exposed position；
Such as Fig. 7 g, this ground floor BM negativity photoresist layer 113a is developed, only retain this ground floor being exposed positionBM negativity photoresist layer 113a is as this black matrix 113 of another layer.
Fig. 8 a to Fig. 8 e is the step schematic diagram of a kind of manufacture method of colored filter substrate in Fig. 4, please join Fig. 8 a extremelyFig. 8 e, the making step in this example is specific as follows:
Such as Fig. 8 a, the first substrate 110 deposits layer of transparent (such as ITO, IZO) or not by modes such as magnetron sputteringsThe conductive material layer 114a of transparent (such as metal)；
Such as Fig. 8 b, this conductive material layer 114a is coated with one layer of BM negativity photoresist layer 113a；
Such as Fig. 8 c, utilize the BM light shield 30 (planar structure of this BM light shield 30 is as shown in Figure 9) making this black matrix 113 rightThis BM negativity photoresist layer 113a is exposed；
Such as Fig. 8 d, this BM negativity photoresist layer 113a through overexposure is developed, removes this BM not being exposed positionNegativity photoresist layer 113a also exposes this conductive material layer 114a not being exposed position, the most only retains this BM being exposed positionNegativity photoresist layer 113a is as this black matrix 113；
Such as Fig. 8 e, it is etched removing to this conductive material layer 114a exposed, only retains this conduction being exposed positionMaterial layer 114a is as this bucking electrode 114.
Fig. 9 is the planar structure schematic diagram of BM light shield 30 used in the above embodiment of the present invention, and this BM light shield 30 canTo be the existing light shield for making black matrix 113, above-described embodiment, by this BM light shield 30, shares BM and exposes engineering, realNow one light shield single exposure, reaches to make black matrix 113 and the purpose of bucking electrode 114 simultaneously.Obtained black matrix 113Can join Figure 10 and Figure 11 with the structure of bucking electrode 114, wherein Figure 10 makes the black matrix of formation in being the embodiment of the present inventionPlanar structure schematic diagram, Figure 11 is the planar structure schematic diagram of the bucking electrode making formation in the embodiment of the present invention.Due toSharing this BM light shield 30 in processing procedure, obtained black matrix 113 and bucking electrode 114 all have at viewing area A and non-display area BHave identical pattern, black matrix 113 is bonded to each other with bucking electrode about 114 contact and completely overlapped together.
The embodiment of the present invention is provided with bucking electrode by the inner side at colored filter substrate, it is possible to achieve electrostatic sheildCovering, bucking electrode uses pattern structure, staggers up and down with pixel electrode, reduces hanging down between bucking electrode and pixel electrodeStraight electric field, is conducive to improving penetrance and shortening response time, reduces saturation voltage and reduce power consumption.And bucking electrode and blackThe pattern of matrix is identical with periphery non-display area in viewing area, center, it is possible to use a light shield single exposure realizes black squareMake while battle array and bucking electrode, it is not necessary to increase the light shield making bucking electrode.As such, it is possible to simplification operation, thus saveProcessing time, and reduce production cost.While utilizing a light shield single exposure to realize black matrix and bucking electrodeMake, the most there is not alignment issues when making black matrix and bucking electrode.
The embodiment of the present invention is at the frame glue dispensing area of this display panels periphery, and black matrix can not excavate, black squareThe area that battle array extends is identical with bucking electrode, and conducting resinl can turn on bucking electrode from the side surface of bucking electrode, will notThe light leak because fluid sealant coating is bad.And the bucking electrode on colored filter substrate is by conducting resinl and thin film transistor (TFT)Public electrode conducting on array base palte connects, it is also possible to avoid the occurrence of dark-state leakage problem.
The above, be only presently preferred embodiments of the present invention, and the present invention not makees any pro forma restriction, thoughSo the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any technology people being familiar with this specialtyMember, in the range of without departing from technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or modificationFor the Equivalent embodiments of equivalent variations, as long as being without departing from technical solution of the present invention content, according to the technical spirit pair of the present inventionAny simple modification, equivalent variations and the modification that above example is made, all still falls within the range of technical solution of the present invention.