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CN106097912B - The manufacturing method and display module of a kind of micron of LED glass substrate display module - Google Patents

The manufacturing method and display module of a kind of micron of LED glass substrate display module
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Publication number
CN106097912B
CN106097912BCN201610638687.0ACN201610638687ACN106097912BCN 106097912 BCN106097912 BCN 106097912BCN 201610638687 ACN201610638687 ACN 201610638687ACN 106097912 BCN106097912 BCN 106097912B
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glass substrate
led wafer
urn
manufacturing
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CN106097912A (en
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严敏
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Look Around Advanced Digital Display Wuxi Co Ltd
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Look Around Advanced Digital Display Wuxi Co Ltd
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Abstract

The present invention relates to the manufacturing methods and display module of a kind of micron of LED glass substrate display module, which comprises prepares the urn glass substrate with multiple filling slots arranged in parallel;In filling slot quantification filling glass sealing-in solder;The melting temperature of glass sealing solder is lower than 260 DEG C of urn glass substrate melting temperature or more;Glass sealing solder is heated, makes glass sealing solder in molten state;The die bond template for being mounted with inverted structure LED wafer array and urn glass substrate are aligned;Under the conditions of set temperature, the LED wafer in inverted structure LED wafer array is loaded into the filling slot of urn glass substrate by glass sealing solder, and solidify connection;Gold-tin alloy Eutectic Layer is deposited on the electrode of LED wafer;In eutectic furnace, the urn glass substrate for being loaded onto LED wafer is welded in control circuit board to get micron LED glass substrate display module is arrived by gold-tin alloy Eutectic Layer.

Description

The manufacturing method and display module of a kind of micron of LED glass substrate display module
Technical field
The present invention relates to the manufacturing method of semiconductor field more particularly to a kind of micron of LED glass substrate display module andDisplay module.
Background technique
Develop to today in traditional semiconductor display product, high density field we habituation has been defined as picturePlain spacing is less than the display of 1.0mm.However traditional LED display technique has already appeared bottleneck in high density field.
Because being limited by the traditional structure of LED light source, while material knot involved in the mould group of processing is integrated after being limited byStructure, for example the driving capacity of traditional constant-current source encapsulation and structure, the loose material bring of traditional FR4PCB plate are integrated intoThe thermal instability problem and flatness strength problem of product, and be spliced into required for large screen for installation and be molded maskWith plastic housing etc., LED display technique is all seriously limit in the breakthrough and application in high density field
Summary of the invention
The object of the present invention is to provide the manufacturing method and display module of a kind of micron of LED glass substrate display module, worksSkill simple and stable is particularly suitable for requiring the high-resolution requirement of small size chip spacing.Display module can according to needIt carries out assembled, may be implemented small to 8 × 8, arrive the image display of unconfined resolution ratio greatly.Pel spacing can be according to needSelf-definition design is wanted, range flexible in application is wide.
In a first aspect, the present invention provides the manufacturing methods of a kind of micron of LED glass substrate display module, comprising:
Prepare urn glass substrate;There are multiple filling slots arranged in parallel on the urn glass substrate;The fillingSlot is the stupefied slot of micron order with trapezoidal sectional shape;
In the filling slot quantification filling glass sealing-in solder;The melting temperature of the glass sealing solder is lower than described260 DEG C of urn glass substrate melting temperature or more;
The glass sealing solder is heated, makes the glass sealing solder in molten state;
The die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate are aligned, the LED is madeSpacing between the line space of cell array and the filling slot is corresponding;
LED wafer in the inverted structure LED wafer array is loaded into the filling slot of the urn glass substrate;
Under the conditions of set temperature, the LED wafer is carried out in the filling slot by the glass sealing solderSolidification connection;
Gold-tin alloy Eutectic Layer is deposited on the electrode of the LED wafer;
In eutectic furnace, the urn glass substrate for being loaded onto the LED wafer passes through the gold-tin alloy Eutectic LayerIt is welded in control circuit board to get the micron LED glass substrate display module is arrived.
Preferably, the urn glass substrate for preparing specifically includes:
Glass substrate original piece is cleaned, is dried;
The glass substrate original piece is seized on both sides by the arms between the upper mold and lower die of mold;Wherein the face of seizing on both sides by the arms of the upper mold is flatFace connects with the first surface of the glass substrate original piece;The trapezoidal stage body of the lower die seized on both sides by the arms on face with multiple rows of protrusion,Connect with the second surface of the glass substrate original piece;
The glass substrate original piece seized on both sides by the arms is placed in forming furnace, fixed pressure counterweight is added in the upper mold,Molding is molded under the conditions of preset temperature curve, obtains the urn glass substrate.
Preferably, described by the die bond template for being mounted with inverted structure LED wafer array and the urn glass substrate pairPosition specifically:
According to the contraposition mark in the die bond template, inverted structure LED wafer array will be mounted on kind of brilliant furnaceDie bond template is aligned with the urn glass substrate.
Preferably, described by the die bond template for being mounted with inverted structure LED wafer array and the urn glass substrateBefore contraposition, the method also includes:
By more flip LED chips according to design pixel demand, with spacing corresponding with the filling slot arrangement die bond inIn the die bond template;Wherein the electrode side of the LED wafer connects with the die bond template.
Preferably, solidification connection of the LED wafer in the filling slot is being carried out by the glass sealing solderLater, the method also includes:
It anneals by preset temperature curve to the urn glass substrate for being loaded into the LED wafer.
Preferably, the control circuit board includes:
Laminated circuit board with Eutectic Layer.
It is further preferred that the control circuit board further include: be welded in interface element on the laminated circuit board, dissipateHot bracket and drive control chip.
Second aspect, the embodiment of the invention provides a kind of using the micro- of the manufacture of manufacturing method described in above-mentioned first aspectRice LED glass substrate display module.
The manufacturing method and display module of a kind of micron of LED glass substrate display module provided by the invention, simple processStablize, is particularly suitable for requiring the high-resolution requirement of small size chip spacing.Display module, which can according to need, is spelledDress, may be implemented small to 8 × 8, arrive the image display of unconfined resolution ratio greatly.Pel spacing, which can according to need, to be made by oneselfJustice design, range flexible in application are wide.
Detailed description of the invention
Fig. 1 is the flow chart of the manufacturing method of micron LED glass substrate display module provided in an embodiment of the present invention;
Fig. 2 is the flow chart of the manufacturing method of urn glass substrate provided in an embodiment of the present invention;
Fig. 3 is one of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 4 is the two of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 5 is the three of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 6 is the four of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 7 is the five of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 8 is the six of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Fig. 9 is the seven of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 10 is the eight of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 11 is the nine of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 12 is the ten of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 13 is the 11 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 14 is the 12 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 15 is the 13 of the manufacturing step schematic diagram of display module provided in an embodiment of the present invention;
Figure 16 is the schematic diagram of display module provided in an embodiment of the present invention.
Specific embodiment
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
The manufacturing method of micron LED glass substrate display module of the invention, is mainly used for LED display, extra small spacingLED display, ultra high density LED display, LED just shine TV, LED just shine monitor, LED video wall, LED indication,The display panel in the fields such as LED special lighting manufactures.
Fig. 1 is the manufacturing method flow chart of micron LED glass substrate display module provided in an embodiment of the present invention.The present inventionManufacturing method include the following steps:
Step 110, urn glass substrate is prepared;
By the preparation process of urn glass substrate, multiple fillings arranged in parallel can be formed in a side surface of substrateSlot.
The preparation process of specific urn glass substrate can be as shown in Figure 2, comprising:
Step 111, glass substrate original piece cleaned, dried;
Step 112, the glass substrate original piece is seized on both sides by the arms between the upper mold and lower die of mold;
Specifically, the process schematic of this step such as Fig. 3.Wherein the face of seizing on both sides by the arms of upper mold is plane, with glass substrate original pieceA side surface connect;The trapezoidal stage body of lower die seized on both sides by the arms on face with multiple rows of protrusion, the second surface with glass substrate original pieceConnect.The bevel inclination angle of trapezoidal stage body is designed according to reflection in optical theory and projection principle.Upper die and lower dieSurface all has the roughness of mirror surface grade.Lower die both ends also have guiding, and positioning is fixed when for Ccope closing machine.
Step 113, the glass substrate original piece seized on both sides by the arms is placed in forming furnace, fixed pressure is added in the upper mold of moldCounterweight molds molding under the conditions of preset temperature curve, obtains urn glass substrate.
Specifically, the process schematic of this step such as Fig. 4.Forming furnace has heater on side wall, and bottom has levelFrame is used to place the glass substrate original piece of mold clamping, also, increases pressure clump weight on upper mold.Pressure clump weight usesThe metal material of heatproof and suitable shape.
By heater to heated in forming furnace so that in forming furnace according to setting temperature curve carry out temperature changeChange.Glass substrate original piece is with slightly molten state is heated to, and under the action of pressure counterweight module, the trapezoidal stage body of lower die immerses glassIn substrate piece, upper mold and lower die are molded, and the die cavity gap after molding meets design requirement.It is obtained after cooling as shown in Figure 5Urn glass substrate.Its partial enlarged view is as shown in fig. 6, have multiple filling slots arranged in parallel on urn glass substrate.EdgeAs shown in fig. 7, obtained filling slot is the stupefied slot of micron order with trapezoidal sectional shape, inclined-plane inclines the sectional view of A-A in Fig. 5Rake angle is identical as the bevel inclination angle a of trapezoidal stage body of multiple rows of protrusion of lower die seized on both sides by the arms on face.
Obtained urn glass substrate is milled, is stand-by after polished and cleaned.
Step 120, in filling slot quantification filling glass sealing-in solder;
Wherein, glass sealing solder uses transparent low temperature glass sealing-in (Soldering Glass, SG) solder, fusing pointTemperature is lower than 260 DEG C of urn glass substrate melting temperature or more.In SG fill solder to the filling slot of glass substrate, form is such asShown in Fig. 8.
Step 130, glass sealing solder is heated, makes glass sealing solder in molten state;
Melt is carried out under the melt temperature of the SG solder of setting, SG solder is filled out in the filling slot of glass substrate after meltForm it is as shown in Figure 9.
Step 140, the die bond template for being mounted with inverted structure LED wafer array and urn glass substrate are aligned, makes LEDSpacing between the line space of cell array and the filling slot is corresponding;
Before executing step 140, it is necessary first to carry out the preparation that die bond template carries out LED wafer array load.Pass throughBy more upside-down mountings (flip chip, FC) LED wafer according to design pixel demand, with spacing corresponding with filling slot arrangement die bondIn in die bond template, forming the required die bond template for being mounted with FC LED wafer array.The wherein electrode side of LED wafer and solidCrystal template connects.The top view for loading the die bond template completed can be as shown in Figure 10.Along such as Figure 11 institute of partial side view of A-AShow.
LED wafer can be monochromatic or polychrome, be chosen with specific reference to actual use demand.
Step 150, the LED wafer in inverted structure LED wafer array is loaded into the filling slot of urn glass substrate;
Specifically, completing contraposition on kind of brilliant furnace, schematic diagram is as shown in figure 12, is identified according to the contraposition in die bond template,The die bond template for being mounted with FC LED wafer array is aligned with urn glass substrate on kind of brilliant furnace.
It is capable of providing reasonable temperature curve by kind of a brilliant furnace, keeps SG solder in molten state, so that FCLED chip goes outSmooth surface can infiltrate in SG solder.The contraposition of die bond template and urn glass substrate can pass through machinery contraposition and image sensingCCD para-position is realized.
Step 160, under the conditions of set temperature, solidification of the LED wafer in filling slot is carried out by glass sealing solderConnection;
After this, it is also necessary to press preset temperature curve, anneal, obtain to the urn glass substrate for being loaded into LED waferTo the urn glass substrate for being loaded into LED flip chip as shown in fig. 13 that.Electrical measurement is carried out after being cleaned and dried.
Step 170, gold-tin alloy Eutectic Layer is deposited on the electrode of LED wafer;
Specifically, first pre-processing to the urn glass substrate for being loaded into LED wafer, pass through (Physical VaporDeposition, PVD) technique deposits gold-tin alloy on the electrode of LED wafer, form Eutectic Layer, schematic diagram such as Figure 14 instituteShow.In a preferred embodiment, in gold-tin alloy, gold: the mass ratio of tin is 80%:20%.The melting temperature of gold-tin alloy is285 degree.
Step 180, in eutectic furnace, the urn glass substrate for being loaded onto LED wafer is welded by gold-tin alloy Eutectic LayerOn to control circuit board to get arrive micron LED glass substrate display module.
Specifically, the preparation of control circuit board is: welding junction element, I/O on the laminated circuit board with Eutectic LayerCascade what the elements such as terminal, cooling stand and drive control chip were formed.Wherein cooling stand can be made of aluminum or ceramics.As shown in figure 15.
After electrical measurement examines control circuit board qualified, it is loaded onto the urn glass substrate and control circuit board one of LED waferIt rises and is fitted into eutectic mold, pass through eutectic using the urn glass substrate that eutectic furnace completes control circuit board and is loaded into LED waferLayer, which is realized, to be electrically connected.
It is cleaning, dry after carrying out electrical measurement, assemble after radiator structure block be micron LED glass substrate display module atProduct, can packed for standby use.
Finally formed micron LED glass substrate display module, as shown in figure 16.
The object of the present invention is to provide micron LED glass substrate display module manufacturing approach craft simple and stable, especiallyIt is suitable for requiring the high-resolution requirement of small size chip spacing.The micron LED glass substrate display module being prepared,It is assembled to can according to need progress, may be implemented small to 8 × 8, arrives the image display of unconfined resolution ratio greatly.Between pixelAway from can according to need self-definition design, range flexible in application is wide.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effectsIt is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the inventionProtection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all includeWithin protection scope of the present invention.

Claims (9)

CN201610638687.0A2016-08-052016-08-05The manufacturing method and display module of a kind of micron of LED glass substrate display moduleActiveCN106097912B (en)

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CN106097912Btrue CN106097912B (en)2019-01-25

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CN119364962B (en)*2024-09-242025-09-23深圳市艾比森光电股份有限公司 Solid crystal printing system and solid crystal printing method

Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2002258762A (en)*2001-02-282002-09-11Kawaguchiko Seimitsu Co LtdElectronic display device with backlight
CN1608278A (en)*2001-12-272005-04-20株式会社东芝Image display apparatus and method of manufacturing the same
CN101930695A (en)*2009-06-262010-12-29三菱电机株式会社 Image display element and manufacturing method thereof
CN102916035A (en)*2012-08-282013-02-06李崇Large-size full-color OLED (Organic Light-Emitting Diode) display
CN103761929A (en)*2014-01-082014-04-30江苏新广联绿色照明工程有限公司Silica-based unit board of LED display screen
CN205003984U (en)*2015-10-152016-01-27上海铁歌科技有限公司Full -color glass LED module
CN105551376A (en)*2014-10-302016-05-04程君Manufacturing method of composite LED glass basal panel

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP2002258762A (en)*2001-02-282002-09-11Kawaguchiko Seimitsu Co LtdElectronic display device with backlight
CN1608278A (en)*2001-12-272005-04-20株式会社东芝Image display apparatus and method of manufacturing the same
CN101930695A (en)*2009-06-262010-12-29三菱电机株式会社 Image display element and manufacturing method thereof
CN102916035A (en)*2012-08-282013-02-06李崇Large-size full-color OLED (Organic Light-Emitting Diode) display
CN103761929A (en)*2014-01-082014-04-30江苏新广联绿色照明工程有限公司Silica-based unit board of LED display screen
CN105551376A (en)*2014-10-302016-05-04程君Manufacturing method of composite LED glass basal panel
CN205003984U (en)*2015-10-152016-01-27上海铁歌科技有限公司Full -color glass LED module

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