技术领域technical field
本发明属于传感器的结构设计领域，具体涉及一种基于压阻效应的柔性阵列式压力传感器，可用于工业生产和医疗康复过程中压力分布状态的检测。The invention belongs to the field of structural design of sensors, and in particular relates to a piezoresistive effect-based flexible array pressure sensor, which can be used to detect pressure distribution states in industrial production and medical rehabilitation.
背景技术Background technique
阵列式压力传感器是用于检测物体相互接触时所受到的压力大小和分布状态的传感器，适用于外形和应用环境复杂的被测对象。目前，投入应用的阵列式压力传感器主要为美国Tekscan公司研制的阵列式压力传感器，该传感器由两片印刷有横纵导电线条的柔性聚酯薄膜组成，其中一片薄膜表面铺设横向带状导体，另一片薄膜表面铺设纵向带状导体，带状导体的宽度可根据具体应用灵活设计，最小可达0.6mm，然后在带状导体上铺设半导体涂层作为压敏材料，当两片薄膜粘合在一起时，横纵导体交叉点即形成了阵列压力感应单元，阵列的每个单元点上有一个等效的压敏电阻，其阻值会随着作用在其上的压力变化而变化，其检测分辨率由传感器单位面积上的点阵密度决定。The array pressure sensor is a sensor used to detect the magnitude and distribution of pressure on objects when they are in contact with each other. It is suitable for objects with complex shapes and application environments. At present, the array pressure sensor put into use is mainly the array pressure sensor developed by Tekscan Company of the United States. The sensor is composed of two flexible polyester films printed with horizontal and vertical conductive lines. A longitudinal strip conductor is laid on the surface of a film. The width of the strip conductor can be flexibly designed according to the specific application, and the minimum can reach 0.6mm. Then, a semiconductor coating is laid on the strip conductor as a pressure-sensitive material. When two films are bonded together When the intersection of horizontal and vertical conductors forms an array pressure sensing unit, each unit point of the array has an equivalent piezoresistor whose resistance value will change with the pressure acting on it, and its detection resolution The rate is determined by the dot matrix density per unit area of the sensor.
在实际应用中，要求整个阵列式传感器各敏感点的阻值能同时检出，这就对传感器各敏感点阻值测量的准确性提出了很高的要求。然而，在大规模电阻网络中测量单点的电阻值存在严重的交叉耦合问题：在通过行线和列线扫描选择敏感单元待测电阻时，所选待测电阻周围的电阻会通过行线和列线与待测电阻构成回路，与待测电阻形成并联关系，从而使输出电阻的实际值无法准确测量。目前，针对交叉耦合问题的解决方法主要有：Tekscan公司在阵列电阻的每行都加一个运算放大器，利用放大器两输入端等电位的原理，列选通开关依次选通各列提供驱动电压，行选通开关依次选通各行实现各点的行列扫描，从而测量各敏感点的电阻，但该方法电路较复杂、功耗大，且需提供负电源；中国科学院合肥智能机械研究所提出了一种二次扫描法，即通过两次扫描消除阵列电阻的交叉耦合，该方法的缺点是必须保证第一次扫描和第二次扫描之间的压力无变化，且调理电路较复杂。上述两种解决方法均是通过调整传感器后端的调理电路实现交叉耦合的消除，目前还未出现通过改进传感器结构消除交叉耦合的报道。In practical applications, it is required that the resistance values of each sensitive point of the entire array sensor can be detected simultaneously, which puts forward high requirements on the accuracy of resistance measurement of each sensitive point of the sensor. However, there is a serious cross-coupling problem in measuring the resistance value of a single point in a large-scale resistance network: when the resistance of the sensitive unit to be measured is selected by scanning the row line and the column line, the resistance around the selected resistance to be measured will pass through the row line and the column line. The column line and the resistance to be measured form a loop and form a parallel relationship with the resistance to be measured, so that the actual value of the output resistance cannot be accurately measured. At present, the solutions to the cross-coupling problem mainly include: Tekscan company adds an operational amplifier to each row of the array resistor, using the principle of equal potential at the two input terminals of the amplifier, the column gating switch sequentially selects each column to provide the driving voltage, and the row The gating switch gates each row in turn to realize the row and column scanning of each point, thereby measuring the resistance of each sensitive point, but the circuit of this method is complicated, the power consumption is large, and a negative power supply is required; the Hefei Institute of Intelligent Machinery, Chinese Academy of Sciences proposed a The double scan method, that is, to eliminate the cross-coupling of the array resistance by two scans, the disadvantage of this method is that it is necessary to ensure that the pressure does not change between the first scan and the second scan, and the conditioning circuit is more complicated. Both of the above two solutions are to eliminate the cross-coupling by adjusting the conditioning circuit at the back end of the sensor, and there is no report on eliminating the cross-coupling by improving the structure of the sensor.
发明内容Contents of the invention
本发明针对背景技术存在的缺陷，提出了一种带pn结整流二极管的柔性阵列式压力传感器。本发明传感器能精确检测大面积的复杂形状表面的压力分布，且后端电路简单，可直接扫描；本发明传感器的体积小，重量轻，易于实现低成本大规模批量化生产。Aiming at the defects in the background technology, the present invention proposes a flexible array pressure sensor with pn junction rectifying diodes. The sensor of the present invention can accurately detect the pressure distribution of a large-area complex-shaped surface, and the back-end circuit is simple and can be scanned directly; the sensor of the present invention is small in size and light in weight, and is easy to realize low-cost large-scale mass production.
本发明的技术方案如下：Technical scheme of the present invention is as follows:
一种新型的柔性阵列式压力传感器，自上而下依次为上柔性薄膜层1、上电极层2、压敏单元阵列、下电极层7、下柔性薄膜层8，其特征在于，所述压敏单元阵列包括n个相同的压敏单元，每个压敏单元3包括pn结和压敏薄膜4，所述pn结由p型半导体薄膜和n型半导体薄膜组成。A new type of flexible array pressure sensor, from top to bottom is an upper flexible film layer 1, an upper electrode layer 2, a pressure-sensitive unit array, a lower electrode layer 7, and a lower flexible film layer 8, characterized in that the pressure The sensitive unit array includes n identical pressure-sensitive units, and each pressure-sensitive unit 3 includes a pn junction and a pressure-sensitive thin film 4, and the pn junction is composed of a p-type semiconductor thin film and an n-type semiconductor thin film.
进一步地，所述压敏单元3包括三层结构，自上而下依次为p型半导体薄膜、n型半导体薄膜、压敏薄膜；或者自上而下依次为n型半导体薄膜、p型半导体薄膜、压敏薄膜；或者自上而下依次为压敏薄膜、n型半导体薄膜、p型半导体薄膜；或者自上而下依次为压敏薄膜、p型半导体薄膜、n型半导体薄膜。Further, the pressure-sensitive unit 3 includes a three-layer structure, which is a p-type semiconductor film, an n-type semiconductor film, and a pressure-sensitive film from top to bottom; or an n-type semiconductor film and a p-type semiconductor film from top to bottom. , pressure-sensitive film; or from top to bottom, pressure-sensitive film, n-type semiconductor film, p-type semiconductor film; or from top to bottom, pressure-sensitive film, p-type semiconductor film, n-type semiconductor film.
进一步地，所述上柔性薄膜层为PI(聚酰亚胺薄膜)、PET(聚对苯二甲酸乙二醇酯)、聚醚酮或透明导电涤纶等高分子材料；所述下柔性薄膜层为PI(聚酰亚胺薄膜)、PET(聚对苯二甲酸乙二醇酯)、聚醚酮或透明导电涤纶等高分子材料。Further, the upper flexible film layer is a polymer material such as PI (polyimide film), PET (polyethylene terephthalate), polyether ketone or transparent conductive polyester; the lower flexible film layer It is a polymer material such as PI (polyimide film), PET (polyethylene terephthalate), polyether ketone or transparent conductive polyester.
进一步地，所述上电极层为金、银、铜等金属导体，所述下电极层为金、银、铜等金属导体。Further, the upper electrode layer is metal conductors such as gold, silver, copper, etc., and the lower electrode layer is metal conductors such as gold, silver, copper, etc.
进一步地，所述p型半导体薄膜、n型半导体薄膜可以为硅、氮化镓、砷化镓、氧化锌等材料。Further, the p-type semiconductor thin film and the n-type semiconductor thin film may be made of silicon, gallium nitride, gallium arsenide, zinc oxide and other materials.
进一步地，所述压敏薄膜可以采用具有压敏特性的导电橡胶薄膜或PVDF(聚偏氟乙烯)等高分子材料形成的薄膜。Further, the pressure-sensitive film may be a conductive rubber film with pressure-sensitive properties or a film formed of polymer materials such as PVDF (polyvinylidene fluoride).
进一步地，所述压敏单元的形状为圆形、矩形、三角形等形状。Further, the shape of the pressure-sensitive unit is a circle, a rectangle, a triangle and the like.
一种新型的柔性阵列式压力传感器的制作方法，包括以下步骤：A method for manufacturing a novel flexible array pressure sensor, comprising the following steps:
步骤1：取两片形状大小相同的PI(聚酰亚胺)薄膜材料分别作为上、下柔性薄膜层，采用去离子水清洗，并置于氮气气氛下干燥；Step 1: Take two PI (polyimide) film materials with the same shape and size as the upper and lower flexible film layers respectively, clean them with deionized water, and dry them under a nitrogen atmosphere;
步骤2：将步骤1清洗后的两片PI薄膜分别放于丝网印刷机的印刷台上，然后在上柔性薄膜表面用导电银浆印刷横向的电极线得到上电极层，下柔性薄膜表面用导电银浆印刷纵向的电极线得到下电极层，在上、下电极层的交叉点处采用炭浆印刷压敏单元3区域的图形；Step 2: Put the two pieces of PI films cleaned in step 1 on the printing table of the screen printing machine respectively, and then print the horizontal electrode lines on the surface of the upper flexible film with conductive silver paste to obtain the upper electrode layer, and use the conductive silver paste on the surface of the lower flexible film. The lower electrode layer is obtained by printing the longitudinal electrode line with conductive silver paste, and the pattern of the pressure sensitive unit 3 area is printed with carbon paste at the intersection of the upper and lower electrode layers;
步骤3：在上、下电极层的电极线边缘采用丝网印刷机印刷出每行每列的引出导线，可使用导电银浆或铜；Step 3: Use a screen printing machine to print the lead wires of each row and column on the edge of the electrode lines of the upper and lower electrode layers, and conductive silver paste or copper can be used;
步骤4：在步骤2得到的各压敏单元图形区域内，采用磁控溅射法依次生长n型半导体薄膜6和p型半导体薄膜5，然后在p型半导体薄膜5上放置导电橡胶压敏薄膜4；Step 4: In the graphic area of each pressure-sensitive unit obtained in step 2, the n-type semiconductor film 6 and the p-type semiconductor film 5 are sequentially grown by the magnetron sputtering method, and then a conductive rubber pressure-sensitive film is placed on the p-type semiconductor film 5 4;
步骤5：采用双组分丙烯酸高黏胶将上柔性薄膜层和下柔性薄膜层粘合封装，得到本发明所述柔性阵列式压力传感器。Step 5: Adhesively package the upper flexible film layer and the lower flexible film layer with a two-component acrylic high-viscosity adhesive to obtain the flexible array pressure sensor of the present invention.
本发明的原理如下：Principle of the present invention is as follows:
本发明柔性阵列式压力传感器的压敏单元包括p型半导体薄膜、n型半导体薄膜和压敏薄膜，其中，p型半导体薄膜和n型半导体薄膜会形成pn结结构，产生内建电势，只允许p型半导体一侧作为电流输入端才能导通，因此具有单向导通的整流特性。The pressure-sensitive unit of the flexible array pressure sensor of the present invention includes a p-type semiconductor film, an n-type semiconductor film and a pressure-sensitive film, wherein the p-type semiconductor film and the n-type semiconductor film will form a pn junction structure to generate a built-in potential, allowing only One side of the p-type semiconductor can only be turned on as the current input terminal, so it has the rectification characteristic of unidirectional conduction.
本发明提供的柔性阵列式压力传感器通过对传感器结构的改进能有效消除阵列电阻单点测量中的交叉耦合问题，以图2的测量电阻为例，假设R11为待测电阻，通过行线和列线选择测量待测电阻的阻值时，只能在纵向施加正向电流才能使二极管导通，待测电阻工作；而当电流流经R21所在压敏单元再向右流经R22所在压敏单元时，由于二极管的单向导电性，电流被截止，因此不能与待测电阻R11构成回路。因此，本发明阵列式压力传感器利用二极管的整流特性，实现了阵列电阻的单点测量，消除了交叉耦合问题。如图3所示，为本发明柔性阵列式压力传感器的后端电路，传感器压敏单元阵列的各行各列只需分别连接数字模拟开关，并由单片机输出行选列选信号控制各数字模拟开关的通断实现行列扫描，然后输出电压信号经数据采集单元A/D转换输入到计算机，由计算机上的上位机软件实现数据处理、存储和显示。The flexible array pressure sensor provided by the present invention can effectively eliminate the cross-coupling problem in the single-point measurement of the array resistance by improving the structure of the sensor. Taking the measurement resistance of Fig. 2 as an example, assuming R11 is the resistance to be measured, the row line and When the column line is selected to measure the resistance value of the resistance to be tested, the diode can only be turned on by applying a forward current in the vertical direction, and the resistance to be tested will work; and when the current flows through the varistor where R21 is located, it flows rightward through the R22 In the case of a pressure sensitive unit, due to the unidirectional conductivity of the diode, the current is cut off, so it cannot form a loop with the resistorR11 to be measured. Therefore, the array pressure sensor of the present invention utilizes the rectification characteristic of the diode to realize single-point measurement of the array resistance and eliminate the problem of cross-coupling. As shown in Figure 3, it is the back-end circuit of the flexible array pressure sensor of the present invention, each row and column of the sensor pressure-sensitive unit array only needs to be connected with digital analog switches respectively, and each digital analog switch is controlled by the row selection and column selection signals output by the single-chip microcomputer The row and column scan is realized by the on-off of the data acquisition unit, and then the output voltage signal is input to the computer through the A/D conversion of the data acquisition unit, and the upper computer software on the computer realizes data processing, storage and display.
本发明的有益效果为：The beneficial effects of the present invention are:
1、本发明柔性阵列式压力传感器的每个敏感点上采用层叠的压敏薄膜、p型半导体薄膜和n型半导体薄膜组成一个压敏单元，每个压敏单元为一个压敏薄膜与一个pn结整流二级管构成的串联结构，在对单个敏感点的电阻变化进行测量时，pn结整流二级管的单向导电特性使得传感器阵列上各敏感点之间不能形成电流回路，从而有效解决了阵列电阻间的交叉耦合问题。1. On each sensitive point of the flexible array pressure sensor of the present invention, a pressure sensitive film, a p-type semiconductor film and an n-type semiconductor film are used to form a pressure-sensitive unit, and each pressure-sensitive unit is a pressure-sensitive film and a pn The series structure composed of junction rectifier diodes, when measuring the resistance change of a single sensitive point, the unidirectional conductivity of the pn junction rectifier diode makes it impossible to form a current loop between the sensitive points on the sensor array, thus effectively solving the problem. The problem of cross-coupling between array resistors is solved.
2、本发明提供的柔性阵列式压力传感器的后端调理电路简单，后端调理电路只需控制行选列选信号的数字模拟开关即可，使得传感器测量压力时更加实时、准确和简便。2. The back-end conditioning circuit of the flexible array pressure sensor provided by the present invention is simple, and the back-end conditioning circuit only needs to control the digital analog switch of the row selection and column selection signals, which makes the pressure measurement of the sensor more real-time, accurate and convenient.
3、本发明柔性阵列式压力传感器采用丝网印刷等厚膜方法制作上、下电极层及其引出导线，工艺简单，易于实现大规模工业化生产。3. The flexible array pressure sensor of the present invention uses thick film methods such as screen printing to manufacture the upper and lower electrode layers and their lead wires. The process is simple and it is easy to realize large-scale industrial production.
附图说明Description of drawings
图1为本发明提供的一种柔性阵列式压力传感器的结构示意图；其中，1为上柔性薄膜层，2为上电极层，3为压敏单元，4为压敏薄膜，5为p型半导体薄膜，6为n型半导体薄膜，7为下电极层，8为下柔性薄膜层；Figure 1 is a structural schematic diagram of a flexible array pressure sensor provided by the present invention; wherein, 1 is the upper flexible film layer, 2 is the upper electrode layer, 3 is the pressure sensitive unit, 4 is the pressure sensitive film, and 5 is the p-type semiconductor film, 6 is an n-type semiconductor film, 7 is a lower electrode layer, and 8 is a lower flexible film layer;
图2为本发明提供的柔性阵列式压力传感器消除耦合的原理图；Fig. 2 is the schematic diagram of the decoupling of the flexible array pressure sensor provided by the present invention;
图3为本发明提供的柔性阵列式压力传感器的阵列扫描电路图。Fig. 3 is an array scanning circuit diagram of the flexible array pressure sensor provided by the present invention.
具体实施方式detailed description
下面结合附图和实施例，详述本发明的技术方案。The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
如图1所示，为本发明提供的一种带pn结整流二极管的柔性阵列式压力传感器的结构示意图，从上往下依次为上柔性薄膜层1、上电极层2、压敏单元阵列、下电极层7、下柔性薄膜层8，其中，上电极层横向印刷于上柔性薄膜层的下表面，下电极层纵向印刷于下柔性薄膜层的上表面，压敏单元阵列包括位于上电极层和下电极层的交叉点处的n个(n为大于1的正整数)相同的压敏单元，所述每个压敏单元3包括三层层叠结构，自上而下依次为压敏薄膜4、p型半导体薄膜5和n型半导体薄膜6。As shown in Figure 1, it is a schematic structural diagram of a flexible array pressure sensor with pn junction rectifier diodes provided by the present invention, from top to bottom are the upper flexible film layer 1, the upper electrode layer 2, the pressure sensitive unit array, The lower electrode layer 7 and the lower flexible film layer 8, wherein the upper electrode layer is horizontally printed on the lower surface of the upper flexible film layer, the lower electrode layer is vertically printed on the upper surface of the lower flexible film layer, and the pressure sensitive unit array includes and n pressure-sensitive units (n is a positive integer greater than 1) at the intersection of the lower electrode layer are the same, each pressure-sensitive unit 3 includes a three-layer laminated structure, and the pressure-sensitive film 4 is sequentially arranged from top to bottom , p-type semiconductor thin film 5 and n-type semiconductor thin film 6.
进一步地，本发明柔性阵列式压力传感器上电极层和下电极层的电极线的线宽和线间距、以及压敏单元的形状和大小可根据实际应用需求进行限定。Furthermore, the line width and line spacing of the electrode lines of the upper electrode layer and the lower electrode layer of the flexible array pressure sensor of the present invention, as well as the shape and size of the pressure sensitive unit can be defined according to actual application requirements.
本发明柔性阵列式压力传感器的压敏单元包括p型半导体薄膜、n型半导体薄膜和压敏薄膜，其中，p型半导体薄膜和n型半导体薄膜会形成pn结结构，产生内建电势，只允许p型半导体一侧作为电流输入端才能导通，因此具有单向导通的整流特性。假设采用的掺杂半导体材料为硅材料，n边施主浓度为1017cm-3，p边受主浓度为1016cm-3，则在300K条件下，内建电势由以下公式计算得到：The pressure-sensitive unit of the flexible array pressure sensor of the present invention includes a p-type semiconductor film, an n-type semiconductor film and a pressure-sensitive film, wherein the p-type semiconductor film and the n-type semiconductor film will form a pn junction structure to generate a built-in potential, allowing only One side of the p-type semiconductor can only be turned on as the current input terminal, so it has the rectification characteristic of unidirectional conduction. Assuming that the doped semiconductor material used is silicon, the n-side donor concentration is 1017 cm-3 , and the p-side acceptor concentration is 1016 cm-3 , then at 300K, the built-in potential is calculated by the following formula:
其中，k为玻尔兹曼常数，T为温度，e为元电荷的电荷值，Na为n边施主浓度，Nd为p边受主浓度，ni为本征半导体载流子浓度，V0为pn结在常温下的内建电势。因此，该pn结的导通电压大约为0.7V左右。Among them, k is the Boltzmann constant, T is the temperature, e is the charge value of the elementary charge,Na is the n-side donor concentration, N dis the p-side acceptor concentration, andni is the intrinsic semiconductor carrier concentration, V0 is the built-in potential of the pn junction at room temperature. Therefore, the conduction voltage of the pn junction is about 0.7V.
本发明提供的柔性阵列式压力传感器通过对传感器结构的改进能有效消除阵列电阻单点测量中的交叉耦合问题，以图2的测量电阻为例，假设R11为待测电阻，通过行线和列线选择测量待测电阻的阻值时，只能在纵向施加正向电流才能使二极管导通，待测电阻工作；而当电流流经R21所在压敏单元再向右流经R22所在压敏单元时，由于二极管的单向导电性，电流被截止，因此不能与待测电阻R11构成回路。因此，本发明阵列式压力传感器利用二极管的整流特性，实现了阵列电阻的单点测量，消除了交叉耦合问题。The flexible array pressure sensor provided by the present invention can effectively eliminate the cross-coupling problem in the single-point measurement of the array resistance by improving the structure of the sensor. Taking the measurement resistance of Fig. 2 as an example, assuming R11 is the resistance to be measured, the row line and When the column line is selected to measure the resistance value of the resistance to be tested, the diode can only be turned on by applying a forward current in the vertical direction, and the resistance to be tested will work; and when the current flows through the varistor where R21 is located, it flows rightward through the R22 In the case of a pressure sensitive unit, due to the unidirectional conductivity of the diode, the current is cut off, so it cannot form a loop with the resistorR11 to be measured. Therefore, the array pressure sensor of the present invention utilizes the rectification characteristic of the diode to realize single-point measurement of the array resistance and eliminate the problem of cross-coupling.
如图3所示，为本发明柔性阵列式压力传感器的后端电路，传感器敏感单元阵列的各行各列只需分别连接数字模拟开关，并由单片机输出行选列选信号控制各数字模拟开关的通断实现行列扫描，然后输出电压信号经数据采集单元A/D转换输入到计算机，由计算机上的上位机软件实现数据处理、存储和显示。As shown in Figure 3, it is the back-end circuit of the flexible array type pressure sensor of the present invention, each row and column of the sensor sensitive unit array only needs to be connected with digital analog switches respectively, and the row selection and column selection signals output by the single-chip microcomputer control the operation of each digital analog switch The row and column scanning is realized by on-off, and then the output voltage signal is input to the computer through the A/D conversion of the data acquisition unit, and the upper computer software on the computer realizes data processing, storage and display.
假设阵列式压力传感器的供电电压为-5V，当电流流过传感器压敏单元阵列上的某一压敏单元，即一个可变电阻与整流二极管的串联电路时，由于硅材料二极管的正向导通压降为0.7V，再经反向放大器放大后，输出电压为Assuming that the power supply voltage of the array pressure sensor is -5V, when the current flows through a certain pressure-sensitive unit on the pressure-sensitive unit array of the sensor, that is, a series circuit of a variable resistor and a rectifier diode, due to the forward conduction of the silicon material diode The voltage drop is 0.7V, and after being amplified by the inverting amplifier, the output voltage is
其中，Rf为运放反馈电阻值，Rs为敏感单元的电阻值，VT为加载在传感器一端的激励电压，Vout为输出电压。Among them, Rf is the feedback resistance value of the operational amplifier, Rs is the resistance value of the sensitive unit, VT is the excitation voltage loaded on one end of the sensor, and Vout is the output voltage.
实施例Example
本实施例的柔性阵列式压力传感器的上、下柔性薄膜层为聚酰亚胺薄膜；上、下电极层为银，采用丝网印刷法得到；压敏单元3包括层叠的三层结构，自上而下依次为30μm厚的导电橡胶压敏薄膜4、30μm厚的p型氮化镓薄膜5和30μm厚的n型氮化镓薄膜6。The upper and lower flexible film layers of the flexible array pressure sensor of this embodiment are polyimide films; the upper and lower electrode layers are silver, obtained by screen printing; the pressure sensitive unit 3 includes a stacked three-layer structure, From top to bottom are a 30 μm thick conductive rubber pressure-sensitive film 4 , a 30 μm thick p-type gallium nitride film 5 and a 30 μm thick n-type gallium nitride film 6 .
实施例所述柔性阵列式压力传感器的制备方法，具体包括以下步骤：The preparation method of the flexible array pressure sensor described in the embodiment specifically includes the following steps:
步骤1：取两片形状大小相同的PI(聚酰亚胺)薄膜材料分别作为上、下柔性薄膜层，采用去离子水清洗表面10min，并置于氮气气氛下干燥；Step 1: Take two pieces of PI (polyimide) film materials with the same shape and size as the upper and lower flexible film layers respectively, clean the surface with deionized water for 10 minutes, and dry under a nitrogen atmosphere;
步骤2：将步骤1清洗后的两片PI薄膜分别放于丝网印刷机的印刷台上，然后在上柔性薄膜表面用导电银浆印刷横向的电极线得到上电极层，下柔性薄膜表面用导电银浆印刷纵向的电极线得到下电极层，在上、下电极层的交叉点处采用炭浆印刷压敏单元3区域的图形；其中，在两片PI薄膜的周围预留15mm左右的位置作为引出导线区，电极线的宽度为8mm；Step 2: Put the two pieces of PI films cleaned in step 1 on the printing table of the screen printing machine respectively, and then print the horizontal electrode lines on the surface of the upper flexible film with conductive silver paste to obtain the upper electrode layer, and use the conductive silver paste on the surface of the lower flexible film. Print the longitudinal electrode lines with conductive silver paste to obtain the lower electrode layer, and use carbon paste to print the pattern of the pressure-sensitive unit 3 area at the intersection of the upper and lower electrode layers; among them, reserve a position of about 15mm around the two PI films As the leading wire area, the width of the electrode line is 8mm;
步骤3：在上、下电极层的电极线边缘采用丝网印刷机印刷出每行每列的引出导线，印刷浆料为银浆，引出导线与后端电路连接；Step 3: Use a screen printing machine to print the lead wires of each row and column on the edge of the electrode wires of the upper and lower electrode layers. The printing paste is silver paste, and the lead wires are connected to the back-end circuit;
步骤4：在步骤2得到的各压敏单元图形区域内，采用磁控溅射法依次溅射生长掺杂浓度为1017cm-3、厚度为30μm的n型氮化镓薄膜6，掺杂浓度为1016cm-3、厚度为30μm的p型氮化镓薄膜5，然后在其上放置30μm厚的裁剪好的导电橡胶压敏薄膜4，从而形成各压敏单元。Step 4: In the pattern area of each pressure-sensitive unit obtained in step 2, the n-type gallium nitride film 6 with a doping concentration of 1017 cm-3 and a thickness of 30 μm is sequentially sputtered and grown by the magnetron sputtering method, and the doped A p-type gallium nitride film 5 with a concentration of 1016 cm-3 and a thickness of 30 μm is placed on it, and then a 30 μm thick conductive rubber pressure-sensitive film 4 that has been cut is placed on it, thereby forming each pressure-sensitive unit.
步骤5：采用双组分丙烯酸高黏胶将上柔性薄膜层和下柔性薄膜层粘合封装，得到本发明所述柔性阵列式压力传感器；其中，上电极层与下电极层相对设置。Step 5: Bonding and encapsulating the upper flexible film layer and the lower flexible film layer with a two-component acrylic high-viscosity adhesive to obtain the flexible array pressure sensor of the present invention; wherein, the upper electrode layer and the lower electrode layer are arranged opposite to each other.
| Application Number | Priority Date | Filing Date | Title |
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| CN201610365447.8ACN106092389A (en) | 2016-05-27 | 2016-05-27 | A kind of novel array-type flexible pressure transducer |
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| CN201610365447.8ACN106092389A (en) | 2016-05-27 | 2016-05-27 | A kind of novel array-type flexible pressure transducer |
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| CN106092389Atrue CN106092389A (en) | 2016-11-09 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201610365447.8APendingCN106092389A (en) | 2016-05-27 | 2016-05-27 | A kind of novel array-type flexible pressure transducer |
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| Date | Code | Title | Description |
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| RJ01 | Rejection of invention patent application after publication | Application publication date:20161109 |