The content of the invention
The defects of it is a primary object of the present invention to overcome prior art, there is provided it is more uniform that one kind can obtain distributionThe plasma processing apparatus of plasma density and atomic group Density Distribution.
To reach above-mentioned purpose, the present invention provides a kind of plasma processing apparatus, and it includes reaction chamber and driving is singleMember.Wherein, reaction chamber includes：Pedestal in the reaction chamber, for loading pending substrate；Around the substrateThe moveable combined type shield ring that sets of outer circumferential side, it includes inner ring and outer rings, and the internal diameter of the outer shroud is more than described interiorThe internal diameter of ring；And multiple forked connecting rods, its upper end are divided into inside and outside two poles, wherein the position correspondence of outside pole is in describedOuter shroud, the position correspondence of inner side pole is in the inner ring；Wherein, the top of each pole has a supporting part, described outerThe height of the supporting part of side pole is more than the height of the supporting part of the inner side pole.The driver element and the forked connecting rodLower end connection, for driving the forked connecting rod to vertically move between the first position and the second position；Wherein when the forkWhen shape connecting rod is located at the first position, the supporting part of described two poles does not contact with the combined type shield ring；Work as instituteWhen stating forked connecting rod and rising to the second place, the outer shroud supports the supporting part for pasting the outside pole, the inner ring supports patchThe supporting part of the inner side pole.
Preferably, the reaction chamber also includes a positioning component, and the positioning component includes being located at the outer shroud respectivelyWith the depressed part inserted in inner ring, for the supporting part of the outside pole and inner side pole.
Preferably, the reaction chamber also includes a positioning component, and the positioning component is included respectively from the lateral branchThe contact pin that bar and the supporting part of inner side pole upwardly extend, and be located at respectively in the outer shroud and inner ring, accordingly for described outerThe slot of the contact pin of side pole and inner side pole insertion；The supporting part not can be inserted into its corresponding slot.
Preferably, the slot is through slot or blind slot, when the slot is blind slot, can be inserted into the described of the blind slot and insertsThe length of pin is less than or equal to the groove depth of the blind slot.
Preferably, when the forked connecting rod is located at the first position, the outer shroud and inner ring are bonded to each other and make instituteCombined type shield ring is stated to be integrally formed.
Preferably, when the forked connecting rod is located at the first position, the combined type shield ring by the pedestal orCover the non-conductive ring support of the pedestal.
Preferably, the height of the supporting part of the outside pole is more than 3~200mm of the supporting part of the inner side pole.
Preferably, when the forked connecting rod is located at the second place, the lower surface of the inner ring is located at the substrateUpper surface above -5~20mm.
Preferably, the combined type shield ring and the forked connecting rod are that plasma-resistant material is made or surface is with anti-Plasma coating.
According to another aspect of the present invention, a kind of plasma applied to above-mentioned plasma processing apparatus is additionally providedThe adjusting method of distribution, including：
The forked connecting rod is risen into the second place by the first position, by the outer shroud and the height of inner ringDegree difference is adjusted to the difference in height of the outside pole and inner side pole；
By the process gas in the outer shroud regulation reaction chamber and its cross direction profiles of plasma and lead toCross the plasma reaction speed that the inner ring adjusts the substrate edge.
Compared to prior art, the beneficial effects of the present invention are the lift adjustment combined type shield ring by forked connecting rodThe difference in height of middle inner ring and outer shroud, inner ring is utilized to adjust to be utilized respectively the distribution of outer shroud adjusting process gas and its plasmaThe plasma reaction speed of whole substrate edge, finally cause substrate surface corona treatment rate uniform.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into oneWalk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the artCover within the scope of the present invention.
Fig. 2 a and Fig. 2 b are the structural representations of plasma processing apparatus according to an embodiment of the invention.It should manageSolve, the plasma processing apparatus in the present invention can be plasma etching, plasma physical vapor deposition, plasmaThe devices such as chemical vapor deposition, plasma surface cleaning, what plasma processing apparatus was merely exemplary, it can includeLess or more element, or the arrangement of the element may be to that indicated in the drawings identical or different.
As illustrated, the top of reaction chamber 20 has insulation cover plate 21, insulation cover plate 21 is usually ceramic dielectric material.InsteadThe side wall of chamber 20 is answered to be provided with the air admission unit 22 for being used for the inside of reaction chamber 20 inputting process gas at top.Reaction chamberThe bottom of room 20 is provided with the pedestal 24 for loading pending substrate W.Inductive is configured above the outside of insulation cover plate 21Coil 23, provide radio-frequency current to coil 23 by radio frequency source (not shown) and generate electric field in reaction chamber 20, it is right with thisThe process gas being incorporated into by air admission unit 22 in chamber is ionized and produces plasma.In addition, in the present embodiment, air inletUnit 22 is formed in the side wall of reaction chamber 20 at insulation cover plate, but it can also be formed in other embodimentsIn insulation cover plate.Moveable combined type shield ring 25 and multiple forked connecting rods 26 are additionally provided with reaction chamber 20.Combined typeShield ring 25 is set around substrate W outer circumferential side, including inner ring 251 and outer shroud 252, the internal diameter of outer shroud 252 are greater than inner ring 251Internal diameter.Outer shroud 252 and the internal diameter of inner ring 251 can need to be designed as being all higher than substrate diameter according to technique, be respectively less than substrateDiameter or the internal diameter of outer shroud 252 are more than substrate diameter and the internal diameter of inner ring 251 is less than substrate diameter.Because combined type shield ring 25 is waitingPreferably it is made of plasma-resistant material in processing environment all the time during ion processing or there is plasma resistantCoating, and being preferred with being not easy to produce pollution in the chamber, plasma-resistant material can be conductive material such as aluminium, or dielectric materialSuch as ceramics or quartz.Heretofore described forked connecting rod 26 refers to that upper end is divided into two poles, a branch is merged into lower endThe connecting rod of the shape and structure of bar.In the present embodiment, the upper end of forked connecting rod 26 is inside and outside two poles 261,262, wherein outsideThe position correspondence of pole 262 is in outer shroud 252, and the position correspondence of inner side pole 261 is in inner ring 251.The top of each poleCorresponding outer shroud or the supporting part of inner ring can be supported with one, in the present embodiment, pole is cylindricality, and supporting part is postThe top levels of shape pole, in other embodiments, the cross sectional shape of pole can be T-shaped, then have larger topPortion's horizontal plane is as supporting part.It should be noted that the height of the supporting part of outside pole is greater than the supporting part of inner side poleHeight, in general, both differences in height are 3~200mm.Driver element 30 is connected with the lower end of forked connecting rod 26, is used forForked connecting rod is driven to vertically move between the first position and the second position.
Fig. 2 a show schematic diagram when forked connecting rod is positioned at first position, now the support of two poles 261,262Portion is not in contact with combined type shield ring 25, and combined type shield ring is preferably by pedestal or covered the non-conductive ring support of pedestalAnd adjacent substrate W, " dead ring " herein can be cover ring (cover ring), shield ring (shadow ring), focusing ring(focus ring), edge ring (edge ring) etc., are not any limitation as to it.As it was previously stated, when forked connecting rod 26 positionsWhen first position, outer shroud 252 and the adjacent substrate of inner ring 251, now, outer shroud 252 and inner ring 251 can both be bonded to each other and makeCombined type shield ring 25 is integrally formed, and the internal diameter of outer shroud 252 can also be set to be more than the external diameter of inner ring 251, one is set between inner and outer ringSet a distance.The accumulation for avoiding polymer between inner and outer ring gap is should be noted during design.As illustrated, inner ring in the present embodiment251 external diameter is equal with the internal diameter of outer shroud 252, therefore the inner peripheral surface of outer shroud 252 is bonded each other with the outer peripheral face of inner ring 521, thisWhen combined type shield ring only play a part of adjust substrate edge corona treatment speed or do not work.In addition, figureForked connecting rod 26 is movably located in pedestal 24 in 2a, but corresponding to the different structure of pedestal 24, forked connecting rod 26Can movably be arranged in the dead ring being circumferentially positioned at around pedestal, or in chamber 20.
Fig. 2 b show schematic diagram when forked connecting rod rises to the second place, and now outer shroud 252 supports patch outside pole 262Supporting part, inner ring 251 then support patch inner side pole 261 supporting part, thus by the difference in height between outer shroud 252 and inner ring 251Expand as the difference in height between outside pole 262 and inner side pole 261.Now, the upper surface of inner ring 251 is located at the upper of substrate WSurface -5~20mm, stop portions plasma is played, so as to play plasma density near regulation substrate, reduceThe effect of substrate edge reaction rate.And because outer shroud 252 is under the support of lateral branch bar 262, height is significantly larger than inner ring 251Height, now outer shroud 252 be used to carry out transverse barriers to the process gas in injection reaction chamber, by process gas to reactionChamber central area guides, while the distribution that the plasma of generation is dissociated to process gas is subject to lateral confinement, avoids techniqueGas not will be completely dissociated into the problem of plasma is i.e. by outside pump drainage to reaction chamber in reaction chamber, while reduce anti-The process gas and plasma distribution density in cavity margin region are answered, improves the plasma distribution density of central area,Improve the distribution consistency degree of substrate W surface plasma.Further, process gas and its plasma pass through outer shroud 252Backward lower diffusion, is constrained by inner ring 251, so as to adjust the process gas of substrate edge and its plasma again near substrate WBody distribution density, it is final so that the reaction rate of substrate W whole surfaces is uniform.Further, since forked connecting rod 26 is positioned at secondLargely it is exposed to during position in plasma, therefore preferable forked connecting rod is also made of plasma-resistant material or surfaceCoating with plasma-resistant material, and be preferred with being not easy to produce pollution in the chamber, plasma-resistant material can be ledElectric material such as aluminium, or dielectric material such as ceramics or quartz.
In the embodiment shown in Fig. 2 a and 2b, the supporting part of inner side pole 261 and outside pole 262 is its top waterPlane, to keep the stable position of outer shroud 252 and inner ring 251 during vertically moving forked connecting rod 26, prevent from sliding or trembleIt is dynamic, a positioning component is preferably also set up in reaction chamber, in the forked uphill process of connecting rod 26, strengthening outside/interiorStability of the supporting part of side pole to outer shroud/inner ring support.Please continue to refer to Fig. 3, positioning component is included respectively from lateral branchThe contact pin 272,271 that bar 262 and the supporting part of inner side pole 261 upwardly extend, and it is located at outer shroud 252 and inner ring 251 respectivelyIn, the corresponding slot 282,281 for supplying the contact pin 272,271 of outside pole and inner side pole to insert.The size of slot is correspondingThe size of contact pin matches.It should be noted that supporting part is in its not pluggable corresponding slot, as size is more than slotSize, so as to inner and outer ring is passed through corresponding contact pin and on supporting part corresponding to being fastened on.In the present embodiment, slot 282,281 be through slot, and the height of the contact pin 271 of insertion inner ring slot 281 should be less than the supporting part of outside pole and inner side poleDifference in height, to avoid the contact pin 271 when forked connecting rod rises to the second place from interfering or be inserted into shadow in outer shroud with outer shroudRing the effect of contraction of outer shroud.Certain slot 282,282 can also be blind slot (i.e. not through slot), if the length of contact pin less than etc.In the depth of corresponding blind slot, equally can by slot and contact pin cooperation by inner and outer ring stable position corresponding pole branchOn support part.In addition, in other embodiments, positioning component may also be to be located in outer shroud 252 and inner ring 251, for lateral branch respectivelyBar 262 and the depressed part of the supporting part of inner side pole 261 insertion, the size phase of the size of depressed part and corresponding supporting partMatch somebody with somebody.By the way that when forked connecting rod rises to the second place, supporting part is embedded into corresponding depressed part to realize the firm of inner and outer ringPositioning.
By above-mentioned plasma processing apparatus, can be needed according to technique to the plasma in reaction chamber pointCloth is adjusted, and is comprised the following steps that：
First, forked connecting rod will be risen to the second place by first position, the difference in height of outer shroud and inner ring will be adjusted toThe difference in height of outside pole and inner side pole.Then the process gas and its plasma in reaction chamber are adjusted by outer shroudCross direction profiles, pass through inner ring adjust substrate edge plasma reaction speed.
In summary, plasma processing apparatus of the invention, can using the cooperation of combined type shield ring and forked connecting rodThe inner ring and outer rings of combined type shield ring are positioned at different height, it is thus anti-with outer shroud adjustment in plasma-treating technologyAnswer the distribution of process gas and its plasma in chamber and utilize the masking of inner ring further to adjust the plasma of substrate edgePrecursor reactant speed, the plasma density of corresponding substrate center region and fringe region is uniformly distributed, and then makes plasmaProcessing of the body to substrate is evenly.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present inventionSome changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.