技术领域technical field
本发明属于微电子器件领域，涉及到半导体器件中不同涨落源对器件电学特性影响幅度的提取方法。The invention belongs to the field of microelectronic devices, and relates to a method for extracting the range of influence of different fluctuation sources on the electrical characteristics of a semiconductor device.
背景技术Background technique
随着半导体器件尺度的逐渐缩小，器件中随机涨落的影响正在变得越来越不容忽视。器件的随机涨落是由于器件制备过程中，不可避免的工艺不确定性造成的，会导致器件电学特性，比如阈值电压的涨落。目前，普遍认为半导体器件中的主要随机涨落源为金属功函数(WFV)涨落和线边缘粗糙度(LER)涨落。其中，金属功函数涨落是由于栅金属中不同晶粒间的功函数差异导致的。而线边缘粗糙度，则是器件制备的光刻与刻蚀中的工艺涨落，所造成的最终刻出的线条与理想线条的差异而导致的。因此，这两种随机涨落源有着不同的工艺来源。With the gradual reduction of the scale of semiconductor devices, the influence of random fluctuations in the devices is becoming more and more difficult to ignore. The random fluctuation of the device is caused by the inevitable process uncertainty during the device fabrication process, which will lead to the fluctuation of the device electrical characteristics, such as the threshold voltage. At present, it is generally believed that the main sources of random fluctuations in semiconductor devices are metal work function (WFV) fluctuations and line edge roughness (LER) fluctuations. Among them, the metal work function fluctuation is caused by the work function difference between different crystal grains in the gate metal. The roughness of the line edge is caused by the difference between the final engraved line and the ideal line caused by the process fluctuations in the lithography and etching of the device preparation. Therefore, the two sources of random fluctuations have different technological origins.
由于这两种涨落源同时对器件的电学特性起作用，目前并没有从器件电学特性角度，区分两种成分的涨落源影响。然而，从工艺优化的角度来说，一个从器件层面上出发，定量地对涨落源影响幅度加以评估和比较的方法是非常有必要的，可以为工艺优化提供一个很好的指导方向。Since these two sources of fluctuations affect the electrical characteristics of the device at the same time, there is currently no way to distinguish the effects of the fluctuation sources of the two components from the perspective of the electrical characteristics of the device. However, from the perspective of process optimization, it is very necessary to start from the device level and quantitatively evaluate and compare the influence of fluctuation sources, which can provide a good guiding direction for process optimization.
发明内容Contents of the invention
本发明的目的在于提供一种从器件层面上，将不同涨落源造成的影响加以分离的提取方法。The purpose of the present invention is to provide an extraction method that separates the effects of different fluctuation sources from the device level.
本发明提供的技术方案如下：The technical scheme provided by the invention is as follows:
一种不同涨落源对器件电学特性影响幅度的提取方法，包括如下步骤：A method for extracting the influence range of different fluctuation sources on the electrical characteristics of a device, comprising the following steps:
1)测量每个器件的转移曲线Id-Vg，从曲线上提取得到各个器件的阈值电压Vth和亚阈摆幅SS；1) Measure the transfer curve Id -Vg of each device, and extract the threshold voltage Vth and subthreshold swing SS of each device from the curve;
2)计算Vth和SS的方差σ2(Vth)、σ2(SS)，以及Vth和SS的协方差Σ；2) Calculate the variance σ2 (Vth ), σ2 (SS) of V th and SS, and the covariance Σ of Vthand SS;
从物理机制上看，金属功函数涨落WFV只影响器件的Vth，不影响器件的亚阈摆幅SS，而线边缘粗糙度涨落LER会同时影响Vth和SS，且二者有线性依赖关系，并且WFV和LER的影响互相独立。即WFV和LER分别造成的阈值电压涨落δVth,WFV，δVth,LER,和LER造成的SS涨落δSSLER满足如下关系式：From the perspective of physical mechanism, the metal work function fluctuation WFV only affects the Vth of the device, and does not affect the subthreshold swing SS of the device, while the line edge roughness fluctuation LER will affect Vth and SS at the same time, and the two have a linear dependence, and the effects of WFV and LER are independent of each other. That is, the threshold voltage fluctuations caused by WFV and LER respectively δVth, WFV , δVth, LER , and SS fluctuations δSS LER caused byLER satisfy the following relationship:
Vth＝Vth,0+δVth,WFV+δVth,LERVth ＝Vth,0 +δVth,WFV +δVth,LER
SS＝SS0+k·δVth,LERSS＝SS0 +k·δVth, LER
由此可以得到，协方差为Σ＝k·σ2(δVth,LER)。From this, it can be obtained that the covariance is Σ=k·σ2 (δVth,LER ).
其中，k为常数，δVth为1)中实际测得的Vth的涨落，Vth,0和SS0为理想状态(没有涨落源影响)的阈值电压和亚阈摆幅。由公式计算得到系数k的值；Among them, k is a constant, δVth is the fluctuation of Vth actually measured in 1), Vth,0 and SS0 are the threshold voltage and sub-threshold swing in the ideal state (without the influence of fluctuation source). by the formula Calculate the value of the coefficient k;
3)由公式得到LER造成的阈值电压涨落幅度σ(δVth,LER)；3) by the formula Get the threshold voltage fluctuation amplitude σ(δVth,LER ) caused by LER;
由此，本发明就得到了分离后的不同涨落源LER和WFV所造成的器件阈值电压Vth涨落的大小。Thus, the present invention obtains the magnitude of fluctuations in the device threshold voltage Vth caused by different fluctuation sources LER and WFV after separation.
附图说明Description of drawings
图1(a)为金属功函数涨落的示意图；Figure 1(a) is a schematic diagram of the metal work function fluctuation;
图1(b)为线边缘粗糙度涨落的示意图；Figure 1(b) is a schematic diagram of the line edge roughness fluctuation;
图2为本发明得到不同涨落源造成的阈值电压涨落幅度示意图；Fig. 2 is a schematic diagram of threshold voltage fluctuation amplitudes caused by different fluctuation sources obtained by the present invention;
图3为不同器件的Id-Vg曲线；Figure 3 is the Id -Vg curves of different devices;
图4为本发明实施例器件的阈值电压Vth和亚阈值摆幅SS；Fig. 4 is the threshold voltage Vth and the sub-threshold swing SS of the device of the embodiment of the present invention;
图5为本发明实施例提取的结果与TCAD仿真得到的单一涨落源的影响幅度比较图。FIG. 5 is a comparison diagram of the influence range of a single fluctuation source obtained from the extracted results of the embodiment of the present invention and the TCAD simulation.
具体实施方法Specific implementation method
下面将通过实例并结合附图，详细阐述本发明的方法。The method of the present invention will be described in detail below through examples and in conjunction with the accompanying drawings.
本实例考虑基于SOI衬底的双栅型鳍型场效应晶体管，为了验证提取方法的准确性，采用TCAD器件仿真得到的Id-Vg曲线来代替真实测量得到Id-Vg曲线。实际应用本方法时，应当采用真实测量得到的转移曲线Id-Vg。In this example, a dual-gate fin field effect transistor based on SOI substrate is considered. In order to verify the accuracy of the extraction method, the Id -Vg curve obtained by TCAD device simulation is used instead of the Id -Vg curve obtained by actual measurement. When this method is actually applied, the transfer curve Id -Vg obtained by actual measurement should be used.
金属功函数涨落和线边缘粗糙度涨落如图1示意图所示。整体的提取流程，如图2所示。The metal work function fluctuation and line edge roughness fluctuation are shown in Figure 1. The overall extraction process is shown in Figure 2.
具体实施步骤：Specific implementation steps:
第一步，根据不同器件的Id-Vg曲线(图3)，提取得到每一个器件的阈值电压Vth和亚阈值摆幅SS(图4)；The first step is to extract the threshold voltage Vth and subthreshold swing SS (Figure 4) of each device according to theId -Vg curves of different devices (Figure 3);
第二步，根据提取得到的阈值电压Vth和亚阈值摆幅SS，计算得到二者的方差和协方差∑为：In the second step, according to the extracted threshold voltage Vth and sub-threshold swing SS, the variance and covariance Σ of the two are calculated as:
σ2(Vth)＝666mV2σ2 (Vth ) = 666mV2
σ2(SS)＝14.5(mV/dec)2σ2 (SS)＝14.5(mV/dec)2
Σ＝-78.4(mV2/dec)Σ＝-78.4(mV2 /dec)
第三步，根据上一步的协方差∑，计算得到参数In the third step, according to the covariance ∑ of the previous step, the parameters are calculated
第四步，由公式得到线边缘粗糙度涨落LER所造成的阈值电压Vth的涨落幅度为σ(δVth,LER)＝20.6mV；The fourth step, by the formula It is obtained that the threshold voltage Vth fluctuation amplitude caused by the line edge roughness fluctuation LER is σ(δVth, LER )=20.6mV;
上面给出了本发明实施例的说明以用于理解本发明。应理解，本发明不限于这里描述的特定实施例，而是如现在对本领域技术人员来说明显地，能够进行各种修改、调整和替代而不偏离本发明的范围。因此，下面的权利要求意图涵盖落在本发明的实质精神和范围内的这样的修改和变化。The descriptions of the embodiments of the present invention have been given above for the understanding of the present invention. It should be understood that the present invention is not limited to the particular embodiments described herein, but is capable of various modifications, adaptations and substitutions, as now apparent to those skilled in the art, without departing from the scope of the present invention. Accordingly, the following claims are intended to cover such modifications and changes as fall within the true spirit and scope of this invention.
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| CN201610014931.6ACN105652175B (en) | 2016-01-11 | 2016-01-11 | A kind of difference fluctuation source influences device electrology characteristic the extracting method of amplitude |
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