技术领域technical field
本发明属于微电子领域，特别是涉及一种包含部分限定型相变材料结构的相变存储单元及制作方法。The invention belongs to the field of microelectronics, in particular to a phase-change storage unit including a partially defined phase-change material structure and a manufacturing method.
背景技术Background technique
相变存储器技术是基于Ovshinsky在20世纪60年代末(Phys.Rev.Lett.,21,1450～1453,1968)70年代初(Appl.Phys.Lett.,18,254～257,1971)提出的相变薄膜可以应用于相变存储介质的构想建立起来的，是一种价格便宜、性能稳定的存储器件。相变存储器可以做在硅晶片衬底上，其关键材料是可记录的相变薄膜、加热电极材料、绝热材料和引出电极材料等。相变存储器的基本原理是利用电脉冲信号作用于器件单元上，使相变材料在非晶态与多晶态之间发生可逆相变，通过分辨非晶态时的高阻与多晶态时的低阻，可以实现信息的写入、擦除和读出操作。Phase change memory technology is based on the phase change proposed by Ovshinsky in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and the early 1970s (Appl. Phys. Lett., 18, 254-257, 1971). The idea that thin films can be applied to phase-change storage media is established, and it is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material undergoes reversible phase transition between amorphous state and polycrystalline state. By distinguishing the high resistance in the amorphous state and the polycrystalline state The low resistance can realize the writing, erasing and reading operations of information.
相变存储器由于具有高速读取、高可擦写次数、非易失性、元件尺寸小、功耗低、抗强震动和抗辐射等优点，被国际半导体工业协会认为最有可能取代目前的闪存存储器而成为未来存储器主流产品和最先成为商用产品的器件。Due to the advantages of high-speed reading, high rewritable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance, phase change memory is considered by the International Semiconductor Industry Association to be the most likely to replace the current flash memory Memory becomes the mainstream product of future memory and the first device to become a commercial product.
存储器的研究一直朝着高速、高密度、低功耗、高可靠性的方向发展。目前世界上从事相变存储器研发工作的机构大多数是半导体行业的大公司，他们关注的焦点之一是如何减小相变存储器的加热电极尺寸，目前比较普遍采用的是侧壁接触型加热电极、环形加热电极与刀片状加热电极及μ型加热电极，但上述结构的缺点是主要靠减小电极尺寸实现低功耗，而相变材料的尺寸都比较大；除了上述结构之外，还有另一种相变材料完全限定型的器件结构，但该结构的缺点和难点是相变材料在较深限定孔内的纳米填充及其后续化学机械抛光工艺。The research of memory has been developing in the direction of high speed, high density, low power consumption and high reliability. At present, most of the institutions engaged in the research and development of phase change memory in the world are large companies in the semiconductor industry. One of their focuses is how to reduce the size of the heating electrode of phase change memory. At present, the side wall contact type heating electrode is more commonly used. , ring-shaped heating electrode, blade-shaped heating electrode and μ-shaped heating electrode, but the disadvantage of the above structure is that low power consumption is mainly achieved by reducing the size of the electrode, and the size of the phase change material is relatively large; in addition to the above structure, there are Another kind of fully defined device structure of phase change materials, but the disadvantage and difficulty of this structure is the nano-filling of phase change materials in deep defined holes and its subsequent chemical mechanical polishing process.
因此，提出一种新的纳米器件单元结构以解决上述技术问题实属必要。Therefore, it is necessary to propose a new nano-device unit structure to solve the above technical problems.
发明内容Contents of the invention
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种包含部分限定型相变材料结构的相变存储单元及制作方法，用于解决现有技术中蘑菇型器件结构存在的相变材料的尺寸较大，器件结构的功耗大、相变速率低的问题，以及完全限定型器件结构存在的填充困难及需要化学机械抛光而导致的对相变材料表面造成损失的问题。In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a phase-change memory unit and a manufacturing method including a partially defined phase-change material structure, which are used to solve the phase change existing in the mushroom-shaped device structure in the prior art The size of the material is large, the power consumption of the device structure is large, the phase change rate is low, and the filling difficulty of the fully defined device structure and the loss of the surface of the phase change material caused by chemical mechanical polishing are required.
为实现上述目的及其他相关目的，本发明提供一种包含部分限定型相变材料结构的相变存储单元的制作方法，所述包含部分限定型相变材料结构的相变存储单元的制作方法至少包括以下步骤：In order to achieve the above object and other related objects, the present invention provides a method for fabricating a phase change memory cell comprising a partially defined phase change material structure, the method for fabricating a phase change memory cell comprising a partially defined phase change material structure at least Include the following steps:
1)提供衬底，在所述衬底内形成至少一个下电极，所述下电极镶嵌于所述衬底内，且所述下电极的上表面与所述衬底的上表面相平齐；1) providing a substrate, forming at least one lower electrode in the substrate, the lower electrode is embedded in the substrate, and the upper surface of the lower electrode is flush with the upper surface of the substrate;
2)在所述下电极的上表面形成加热电极，并在所述加热电极之间的所述衬底表面形成第一绝缘材料层；2) forming a heating electrode on the upper surface of the lower electrode, and forming a first insulating material layer on the surface of the substrate between the heating electrodes;
3)采用回刻工艺刻蚀去除部分所述加热电极及所述第一绝缘材料层，在所述加热电极上方的所述第一绝缘材料层内形成限定型孔结构；3) Etching and removing part of the heating electrode and the first insulating material layer by using an etch-back process, and forming a defined hole structure in the first insulating material layer above the heating electrode;
4)在所述限定型孔结构内形成部分限定型相变材料结构，并在所述部分限定型相变材料结构表面形成上电极；4) forming a partially defined phase change material structure in the defined pore structure, and forming an upper electrode on the surface of the partially defined phase change material structure;
5)在所述上电极表面形成引出电极。5) Forming an extraction electrode on the surface of the upper electrode.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤1)中，采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述衬底内形成所述下电极。As a preferred solution of the manufacturing method of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention, in the step 1), sputtering, evaporation, chemical vapor deposition, plasma-enhanced chemical The lower electrode is formed within the substrate by vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition, or atomic layer deposition.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤2)中，采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述下电极的上表面形成所述加热电极。As a preferred solution of the manufacturing method of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention, in the step 2), sputtering, evaporation, chemical vapor deposition, plasma-enhanced chemical The heating electrode is formed on the upper surface of the lower electrode by vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤2)中，形成的所述加热电极可以为圆柱形加热电极或刀片状加热电极，所述圆柱形加热电极的直径为1nm～100nm，高度为50nm～150nm，所述刀片状加热电极的横截面尺寸为1nm～30nm×5nm～100nm，高度为50nm～150nm。As a preferred solution of the method for manufacturing a phase-change memory cell comprising a partially defined phase-change material structure of the present invention, in the step 2), the heating electrode formed can be a cylindrical heating electrode or a blade-shaped heating electrode , the diameter of the cylindrical heating electrode is 1nm-100nm, the height is 50nm-150nm, the cross-sectional size of the blade-shaped heating electrode is 1nm-30nm×5nm-100nm, and the height is 50nm-150nm.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤3)中，形成的所述限定型孔结构的形状为圆柱形、圆锥形、长方形或梯形，所述限定型孔结构的横截面尺寸为5nm～50nm×10nm～150nm，高度为10nm～100nm。As a preferred solution of the method for manufacturing a phase change memory cell comprising a partially defined phase change material structure of the present invention, in the step 3), the shape of the formed defined hole structure is cylindrical, conical, Rectangular or trapezoidal, the cross-sectional size of the defined pore structure is 5nm-50nm×10nm-150nm, and the height is 10nm-100nm.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤4)包括以下步骤：As a preferred solution of the method for manufacturing a phase-change memory cell comprising a partially defined phase-change material structure of the present invention, the step 4) includes the following steps:
4-1)采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述限定型孔结构内及所述第一绝缘材料层表面形成相变材料层；4-1) Using sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition Forming a phase-change material layer in the defined hole structure and on the surface of the first insulating material layer;
4-2)采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述相变材料层表面形成上电极层；4-2) By sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition forming an upper electrode layer on the surface of the phase change material layer;
4-3)刻蚀所述上电极层及所述相变材料层，形成所述上电极及所述部分限定型相变材料结构。4-3) Etching the upper electrode layer and the phase change material layer to form the upper electrode and the partially defined phase change material structure.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述部分限定型相变材料结构的纵截面形状为T形，包括第一部分及第二部分，所述第一部分填满所述限定型孔结构，所述第二部分位于所述第一部分的上表面，且所述第二部分的横向尺寸大于所述第一部分的横向尺寸。As a preferred solution of the method for manufacturing a phase-change memory cell comprising a partially-defined phase-change material structure of the present invention, the longitudinal section of the partially-defined phase-change material structure is T-shaped, including a first part and a second part , the first part fills the defined pore structure, the second part is located on the upper surface of the first part, and the lateral dimension of the second part is larger than that of the first part.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，步骤4)之后，还包括在所述部分限定型相变材料结构及所述上电极之间的所述第一绝缘材料层表面形成第二绝缘材料层的步骤。As a preferred solution of the method for manufacturing a phase-change memory cell comprising a partially-defined phase-change material structure of the present invention, after step 4), it also includes between the partially-defined phase-change material structure and the upper electrode The step of forming a second insulating material layer on the surface of the first insulating material layer.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，所述步骤5)中，采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述上电极表面形成引出电极。As a preferred solution of the manufacturing method of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention, in the step 5), sputtering, evaporation, chemical vapor deposition, plasma-enhanced chemical Vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition form the extraction electrode on the surface of the upper electrode.
作为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法的一种优选方案，步骤5)之后，还包括在所述引出电极之间的所述第二绝缘材料层表面形成第三绝缘材料层的步骤。As a preferred solution of the method for manufacturing a phase-change memory cell comprising a partially defined phase-change material structure of the present invention, after step 5), it also includes forming A third insulating material layer step.
本发明还提供一种包含部分限定型相变材料结构的相变存储单元，所述包含部分限定型相变材料结构的相变存储单元包括：The present invention also provides a phase-change memory unit comprising a partially defined phase-change material structure, the phase-change memory unit comprising a partially defined phase-change material structure comprising:
衬底；Substrate;
下电极，镶嵌于所述衬底内，且上表面与所述衬底的上表面相平齐；The lower electrode is embedded in the substrate, and the upper surface is flush with the upper surface of the substrate;
加热电极，位于所述下电极的上表面；a heating electrode located on the upper surface of the lower electrode;
部分限定型相变材料结构，位于所述加热电极的表面；a partially defined phase change material structure located on the surface of the heater electrode;
上电极，位于所述部分限定型相变材料结构的表面；an upper electrode located on the surface of the partially defined phase change material structure;
引出电极，位于所述上电极的表面。The extraction electrode is located on the surface of the upper electrode.
作为本发明的包含部分限定型相变材料结构的相变存储单元的一种优选方案，所述下电极贯穿所述衬底，且所述下电极的下表面与所述衬底的下表面相平齐。As a preferred solution of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention, the lower electrode runs through the substrate, and the lower surface of the lower electrode is the same as the lower surface of the substrate. flush.
作为本发明的包含部分限定型相变材料结构的相变存储单元的一种优选方案，所述加热电极可以为圆柱形加热电极或刀片状加热电极，所述圆柱形加热电极的直径为1nm～100nm，高度为50nm～150nm，所述刀片状加热电极的横截面尺寸为1nm～30nm×5nm～100nm，，高度为50nm～150nm。As a preferred solution of the phase-change memory unit comprising a partially defined phase-change material structure of the present invention, the heating electrode may be a cylindrical heating electrode or a blade-shaped heating electrode, and the diameter of the cylindrical heating electrode is 1 nm to 100nm and a height of 50nm to 150nm, the cross-sectional size of the blade-shaped heating electrode is 1nm to 30nm×5nm to 100nm, and the height is 50nm to 150nm.
作为本发明的包含部分限定型相变材料结构的相变存储单元的一种优选方案，所述部分限定型相变材料结构的纵截面形状为T形，包括第一部分及第二部分，所述第一部分位于所述加热电极表面，所述第二部分位于所述第一部分的上表面，且所述第二部分的横向尺寸大于所述第一部分的横向尺寸。As a preferred solution of the phase change memory unit comprising a partially defined phase change material structure of the present invention, the longitudinal section of the partially defined phase change material structure is T-shaped, including a first part and a second part, the The first part is located on the surface of the heating electrode, the second part is located on the upper surface of the first part, and the lateral dimension of the second part is larger than that of the first part.
作为本发明的包含部分限定型相变材料结构的相变存储单元的一种优选方案，所述包含部分限定型相变材料结构的相变存储单元还包括第一绝缘材料层，所述第一绝缘材料层位于所述加热电极及所述第一部分之间的所述衬底表面。As a preferred solution of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention, the phase-change memory cell comprising a partially defined phase-change material structure further includes a first insulating material layer, and the first A layer of insulating material is located on the surface of the substrate between the heating electrode and the first portion.
作为本发明的包含部分限定型相变材料结构的相变存储单元的一种优选方案，所述包含部分限定型相变材料结构的相变存储单元还包括第二绝缘材料层及第三绝缘材料层，所述第二绝缘材料层位于所述部分限定型相变材料结构及所述上电极之间的所述第一绝缘材料层表面，所述第三绝缘材料层位于所述引出电极之间的所述第二绝缘材料层表面。As a preferred solution of the phase-change memory unit comprising a partially defined phase-change material structure of the present invention, the phase-change memory unit comprising a partially defined phase-change material structure further includes a second insulating material layer and a third insulating material layer layer, the second insulating material layer is located on the surface of the first insulating material layer between the partially defined phase-change material structure and the upper electrode, and the third insulating material layer is located between the extraction electrodes The surface of the second insulating material layer.
如上所述，本发明的包含部分限定型相变材料结构的相变存储单元及制作方法，具有以下有益效果：本发明的相变存储单元中采用部分限定型相变材料结构，其特点是通过加热电极回刻形成的限定孔内填充相变材料，使得相变存储器相变过程中发生相变的区域仅局限于限定孔内，与传统蘑菇型器件结构相比，相变体积大幅度减小，且T型相变材料的第二部分始终处于晶态，在器件单元的结晶化操作过程中可作为T型相变材料第一部分晶化的籽晶，加快结晶过程，可以大大降低器件功耗并提高相变速度，与完全限定型相变材料器件结构相比，不需要引入相变材料的化学机械抛光工艺，避免了对相变材料上表面的损伤。As mentioned above, the phase-change memory unit and the manufacturing method including the partially defined phase-change material structure of the present invention have the following beneficial effects: the phase-change memory unit of the present invention adopts the partially defined phase-change material structure, which is characterized by The limited hole formed by the heating electrode is filled with phase change material, so that the area where the phase change occurs during the phase change process of the phase change memory is limited to the limited hole. Compared with the traditional mushroom-type device structure, the phase change volume is greatly reduced , and the second part of the T-type phase change material is always in the crystalline state, it can be used as the seed crystal for the crystallization of the first part of the T-type phase change material during the crystallization operation of the device unit, speeding up the crystallization process and greatly reducing the power consumption of the device And the phase change speed is increased. Compared with the device structure of the fully defined phase change material, there is no need to introduce a chemical mechanical polishing process for the phase change material, and damage to the upper surface of the phase change material is avoided.
附图说明Description of drawings
图1显示为本发明的包含部分限定型相变材料结构的相变存储单元的制备流程示意图。FIG. 1 is a schematic diagram showing the preparation process of a phase-change memory cell comprising a partially defined phase-change material structure according to the present invention.
图2至图13显示为本发明的包含部分限定型相变材料结构的相变存储单元的制作方法各步骤所呈现的截面结构示意图。FIGS. 2 to 13 are schematic cross-sectional structural diagrams for each step of the manufacturing method of the phase-change memory cell including the partially defined phase-change material structure of the present invention.
图14显示为本发明的包含部分限定型相变材料结构的相变存储单元与蘑菇型相变材料结构的相变存储单元的操作电流的对比图。FIG. 14 is a comparison diagram of the operating currents of the phase-change memory cell comprising a partially defined phase-change material structure and the phase-change memory cell with a mushroom-type phase-change material structure according to the present invention.
元件标号说明Component designation description
10衬底10 substrates
11下电极11 lower electrode
12加热电极12 heating electrodes
13第一绝缘材料层13 first insulating material layer
14限定型孔结构14 limited hole structure
15部分限定型相变材料结构15 Partially Defined Phase Change Material Structures
151第一部分151 part one
152第二部分152 part two
153相变材料层153 phase change material layer
16上电极16 upper electrode
161上电极层161 upper electrode layer
17引出电极17 leads the electrode
18第二绝缘材料层18 second insulating material layer
19第三绝缘材料层19 third insulating material layer
具体实施方式detailed description
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
请参阅图1～图14。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。Please refer to Figure 1 to Figure 14. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.
请参阅图1，本发明提供一种包含部分限定型相变材料结构的相变存储单元的制作方法，所述包含部分限定型相变材料结构的相变存储单元的制作方法至少包括以下步骤：Please refer to FIG. 1, the present invention provides a method for manufacturing a phase-change memory cell comprising a partially defined phase-change material structure, the method for manufacturing a phase-change memory cell comprising a partially defined phase-change material structure at least includes the following steps:
1)提供衬底，在所述衬底内形成至少一个下电极，所述下电极镶嵌于所述衬底内，且所述下电极的上表面与所述衬底的上表面相平齐；1) providing a substrate, forming at least one lower electrode in the substrate, the lower electrode is embedded in the substrate, and the upper surface of the lower electrode is flush with the upper surface of the substrate;
2)在所述下电极的上表面形成加热电极，并在所述加热电极之间的所述衬底表面形成第一绝缘材料层；2) forming a heating electrode on the upper surface of the lower electrode, and forming a first insulating material layer on the surface of the substrate between the heating electrodes;
3)采用回刻工艺刻蚀去除部分所述加热电极及所述第一绝缘材料层，在所述加热电极上方的所述第一绝缘材料层内形成限定型孔结构；3) Etching and removing part of the heating electrode and the first insulating material layer by using an etch-back process, and forming a defined hole structure in the first insulating material layer above the heating electrode;
4)在所述限定型孔结构内形成部分限定型相变材料结构，并在所述部分限定型相变材料结构表面形成上电极；4) forming a partially defined phase change material structure in the defined pore structure, and forming an upper electrode on the surface of the partially defined phase change material structure;
5)在所述上电极表面形成引出电极。5) Forming an extraction electrode on the surface of the upper electrode.
在步骤1)中，请参阅图1中的S1步骤及图2，提供衬底10，在所述衬底10内形成至少一个下电极11，所述下电极11镶嵌于所述衬底10内，且所述下电极11的上表面与所述衬底10的上表面相平齐。In step 1), referring to step S1 in FIG. 1 and FIG. 2, a substrate 10 is provided, and at least one lower electrode 11 is formed in the substrate 10, and the lower electrode 11 is embedded in the substrate 10. , and the upper surface of the lower electrode 11 is flush with the upper surface of the substrate 10 .
作为示例，所述衬底10可以为任意一种常规半导体衬底，譬如Si衬底或Ge衬底等。As an example, the substrate 10 may be any conventional semiconductor substrate, such as a Si substrate or a Ge substrate.
作为示例，可以采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述衬底10内形成所述下电极11。所述下电极11的材料可以为W、Pt、Au、Ti、Al、Ag、Cu或Ni中的任意一种单金属材料或至少两种上述单金属材料组合成的合金材料，抑或上述单金属材料的氮化物或氧化物。优选地，本实施例中，采用CVD(化学气相沉积)法制备W作为下电极11，所述下电极11的形状可以为圆柱形，所述下电极11的直径可以为70nm，高度可以为200nm，但不以此为限，在其他示例中，所述下电极11的形状及尺寸可以根据需要选择。As examples, sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition can be used The lower electrode 11 is formed in the substrate 10 by a method. The material of the lower electrode 11 can be any single metal material in W, Pt, Au, Ti, Al, Ag, Cu or Ni, or an alloy material composed of at least two of the above single metal materials, or the above single metal material Nitrides or oxides of materials. Preferably, in this embodiment, W is prepared by CVD (Chemical Vapor Deposition) as the lower electrode 11, the shape of the lower electrode 11 can be cylindrical, the diameter of the lower electrode 11 can be 70nm, and the height can be 200nm , but not limited thereto, in other examples, the shape and size of the lower electrode 11 can be selected according to requirements.
作为示例，所述衬底10中形成至少四个所述下电极11，所述下电极11呈至少两行及至少两列的点阵式分布。As an example, at least four of the lower electrodes 11 are formed in the substrate 10 , and the lower electrodes 11 are distributed in a lattice form of at least two rows and at least two columns.
作为示例，所述下电极11贯穿所述衬底10，且所述下电极11的下表面与所述衬底10的下表面相平齐。As an example, the lower electrode 11 runs through the substrate 10 , and the lower surface of the lower electrode 11 is flush with the lower surface of the substrate 10 .
在步骤2)中，请参阅图1中的S2步骤及图3，在所述下电极11的上表面形成加热电极12，并在所述加热电极12之间的所述衬底10表面形成第一绝缘材料层13。In step 2), please refer to step S2 in FIG. 1 and FIG. A layer 13 of insulating material.
作为示例，采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述下电极11的上表面形成所述加热电极12，使得所述加热电极12与所述下电极11之间形成良好的欧姆连接。By way of example, sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition The heating electrode 12 is formed on the upper surface of the lower electrode 11 , so that a good ohmic connection is formed between the heating electrode 12 and the lower electrode 11 .
作为示例，所述加热电极12可以为圆柱形加热电极或刀片状加热电极，所述圆柱形加热电极的直径可以为1nm～100nm，高度可以为50nm～150nm，所述刀片状加热电极的横截面尺寸可以为1nm～30nm×5nm～100nm，高度可以为50nm～150nm。As an example, the heating electrode 12 can be a cylindrical heating electrode or a blade-shaped heating electrode. The diameter of the cylindrical heating electrode can be 1 nm to 100 nm, and the height can be 50 nm to 150 nm. The cross-section of the blade-shaped heating electrode The size may be 1nm-30nm×5nm-100nm, and the height may be 50nm-150nm.
作为示例，所述加热电极12的材料可以为导电的氮化物，优选地，所述加热电极12的材料可以为氮化钛、氮化硅钛或氮化铝钛。As an example, the material of the heating electrode 12 may be conductive nitride, preferably, the material of the heating electrode 12 may be titanium nitride, silicon titanium nitride or aluminum titanium nitride.
在一示例中，采用原子气相沉积法制备TiN作为所述加热电极12，所述加热电极12为圆柱形加热电极，所述加热电极12的直径为35nm，高度为100nm。In one example, TiN is prepared by atomic vapor deposition as the heating electrode 12 , the heating electrode 12 is a cylindrical heating electrode, the diameter of the heating electrode 12 is 35 nm, and the height is 100 nm.
作为示例，相邻的所述加热电极12之间沉积所述第一绝缘材料层13，所述第一绝缘材料层13用于隔离相邻的所述加热电极12。所述第一绝缘材料层13的材料可以为氮化物、氧化物、氮氧化物或碳化物。As an example, the first insulating material layer 13 is deposited between adjacent heating electrodes 12 , and the first insulating material layer 13 is used to isolate adjacent heating electrodes 12 . The material of the first insulating material layer 13 may be nitride, oxide, oxynitride or carbide.
在步骤3)中，请参阅图1中的S3步骤及图4，采用回刻工艺刻蚀去除部分所述加热电极12及所述第一绝缘材料层13，在所述加热电极12上方的所述第一绝缘材料层13内形成限定型孔结构14。In step 3), please refer to step S3 in FIG. 1 and FIG. 4, use an etch-back process to etch and remove part of the heating electrode 12 and the first insulating material layer 13, and all the layers above the heating electrode 12 A defined hole structure 14 is formed in the first insulating material layer 13 .
作为示例，形成的所述限定型孔结构14的形状为圆柱形、圆锥形、长方形或梯形，所述限定型孔结构14的横截面尺寸可以为5nm～50nm×10nm～150nm，高度可以为10nm～100nm。As an example, the shape of the defined hole structure 14 formed is cylindrical, conical, rectangular or trapezoidal, the cross-sectional size of the defined hole structure 14 can be 5nm～50nm×10nm～150nm, and the height can be 10nm ~100nm.
在步骤4)中，请参阅图1中的S4步骤及图5至图9，在所述限定型孔结构14内形成部分限定型相变材料结构15，并在所述部分限定型相变材料结构15表面形成上电极16。In step 4), please refer to step S4 in FIG. 1 and FIGS. An upper electrode 16 is formed on the surface of the structure 15 .
作为示例，该步骤包括以下步骤：As an example, this step includes the following steps:
4-1)采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述限定型孔结构14内及所述第一绝缘材料层13表面形成相变材料层153，如图5所示；在圆柱形加热电极12上方的限定型孔结构14内形成所述相变材料层153的TEM剖面图如图6所示，在刀片状加热电极12上方的限定型孔结构14内形成所述相变材料层153的TEM剖面图如图7所示；所述相变材料层153的材料为硫系化合物、GeSb、SiSb或金属氧化物；在一示例中，采用磁控溅射法在所述限定型孔结构14内利用Ge2Sb2Te5合金靶制备Ge2Sb2Te5相变材料层，工艺参数为：本底气压为1×10-5Pa，溅射时Ar气气压为0.2Pa，溅射功率为200W，衬底温度为25℃，薄膜厚度为100nm；4-1) Using sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition Form a phase-change material layer 153 in the defined hole structure 14 and on the surface of the first insulating material layer 13, as shown in FIG. 5; The TEM cross-sectional view of the phase-change material layer 153 is shown in Figure 6, and the TEM cross-sectional view of the phase-change material layer 153 formed in the defined hole structure 14 above the blade-shaped heating electrode 12 is shown in Figure 7; The material of the variable material layer 153 is a chalcogenide compound, GeSb, SiSb or metal oxide; in one example, a Ge2 Sb2 Te5 alloy target is used to prepare Ge in the defined hole structure 14 by magnetron sputtering.2 Sb2 Te5 phase change material layer, the process parameters are: the background pressure is 1×10-5 Pa, the Ar gas pressure is 0.2Pa during sputtering, the sputtering power is 200W, the substrate temperature is 25°C, the film thickness 100nm;
4-2)采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述相变材料层153表面形成上电极层161，如图8所示；所述上电极层161的材料为单金属材料W、Pt、Au、Ti、Al、Ag、Cu和Ni中的任一种，或其组合成合金材料的氮化物或氮氧化物；在一示例中，在所述相变材料层153表面采用磁控溅射法制备TiN上电极层，工艺参数为：本底气压为1×10-5Pa，溅射时气压为0.2Pa，Ar/N2的气体流量比例为1：1，溅射功率为300W，衬底温度为25℃，TiN高度为40nm；4-2) By sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition The upper electrode layer 161 is formed on the surface of the phase change material layer 153 by method, as shown in FIG. Any one of them, or its combination into nitride or oxynitride of an alloy material; in one example, a TiN upper electrode layer is prepared by magnetron sputtering on the surface of the phase change material layer 153, and the process parameters are: The base pressure is 1×10-5 Pa, the gas pressure during sputtering is 0.2Pa, the gas flow ratio of Ar/N2 is 1:1, the sputtering power is 300W, the substrate temperature is 25°C, and the TiN height is 40nm;
4-3)刻蚀所述上电极层161及所述相变材料层153，形成所述上电极16及所述部分限定型相变材料结构15，如图9所示；在圆柱形加热电极12上方形成所述部分限定型相变材料结构15的TEM剖面图如图10所示；采用感耦等离子体刻蚀方法所述上电极层161及所述相变材料层153，形成所述上电极16及所述部分限定型相变材料结构15，所述上电极16的形状及尺寸与所述部分限定型相变材料结构15的形状及尺寸相同，在一示例中，所述上电极16及所述部分限定型相变材料结构15的形状均为正方形，边长为80nm。4-3) Etching the upper electrode layer 161 and the phase change material layer 153 to form the upper electrode 16 and the partially defined phase change material structure 15, as shown in FIG. 9; 12 is a TEM cross-sectional view of the partially defined phase-change material structure 15 formed above it as shown in FIG. The electrode 16 and the partially defined phase change material structure 15, the shape and size of the upper electrode 16 are the same as the shape and size of the partially defined phase change material structure 15, in one example, the upper electrode 16 And the shape of the partially defined phase-change material structure 15 is a square with a side length of 80 nm.
作为示例，所述部分限定型相变材料结构15的纵截面形状为T形，包括第一部分151及第二部分152，所述第一部分151填满所述限定型孔结构14，所述第二部分152位于所述第一部分151的上表面，且所述第二部分152的横向尺寸大于所述第一部分151的横向尺寸。As an example, the longitudinal cross-sectional shape of the partially defined phase change material structure 15 is T-shaped, including a first part 151 and a second part 152, the first part 151 fills the defined hole structure 14, and the second The portion 152 is located on the upper surface of the first portion 151 , and the lateral dimension of the second portion 152 is larger than that of the first portion 151 .
作为示例，请参阅图11，步骤4)之后，还包括在所述部分限定型相变材料结构15及所述上电极16之间的所述第一绝缘材料层13表面形成第二绝缘材料层18的步骤。所述第二绝缘材料层18沉积于相邻的所述部分限定型相变材料结构15之间及相邻的所述上电极16之间，所述第二绝缘材料层18用于隔离相邻的所述部分限定型相变材料结构15及相邻的所述上电极16；所述第二绝缘材料层18的材料可以为氮化物、氧化物、氮氧化物或碳化物。As an example, please refer to FIG. 11 , after step 4), it also includes forming a second insulating material layer on the surface of the first insulating material layer 13 between the partially defined phase-change material structure 15 and the upper electrode 16 18 steps. The second insulating material layer 18 is deposited between adjacent partially defined phase-change material structures 15 and between adjacent upper electrodes 16, and the second insulating material layer 18 is used to isolate adjacent The partially defined phase-change material structure 15 and the adjacent upper electrode 16; the material of the second insulating material layer 18 may be nitride, oxide, oxynitride or carbide.
在步骤5)中，请参阅图1中的S5步骤及图12，在所述上电极16表面形成引出电极17。In step 5), referring to step S5 in FIG. 1 and FIG. 12 , an extraction electrode 17 is formed on the surface of the upper electrode 16 .
作为示例，采用溅射法、蒸发法、化学气相沉积法、等离子体增强化学气相沉积法、低压化学气相沉积法、金属化合物气相沉积法、分子束外延法、原子气相沉积法或原子层沉积法在所述上电极16表面形成引出电极17。所述引出电极17的材料可以为W、Pt、Au、Ti、Al、Ag、Cu和Ni中的任一种，或其中任意两种组合成合金材料。By way of example, sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, metal compound vapor deposition, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition An extraction electrode 17 is formed on the surface of the upper electrode 16 . The material of the extraction electrode 17 can be any one of W, Pt, Au, Ti, Al, Ag, Cu and Ni, or any two of them can be combined into an alloy material.
作为示例，请参阅图13,，步骤5)之后，还包括在所述引出电极17之间的所述第二绝缘材料层18表面形成第三绝缘材料层19的步骤。相邻的所述引出电极17之间沉积所述第三绝缘材料层18，所述第三绝缘材料层18用于隔离相邻的所述引出电极17。所述第三绝缘材料层18的材料可以为氮化物、氧化物、氮氧化物或碳化物。As an example, please refer to FIG. 13 , after step 5), a step of forming a third insulating material layer 19 on the surface of the second insulating material layer 18 between the extraction electrodes 17 is also included. The third insulation material layer 18 is deposited between the adjacent extraction electrodes 17 , and the third insulation material layer 18 is used to isolate the adjacent extraction electrodes 17 . The material of the third insulating material layer 18 may be nitride, oxide, oxynitride or carbide.
作为示例，所述引出电极17用于将所述相变存储单元与该单元的控制开关、驱动电路及外围电路集成，从而制备出完整的相变存储器器件单元。本发明的包含部分限定型相变材料结构的相变存储单元与蘑菇型相变材料结构的相变存储单元的操作电流的对比图如图14所示，由图14可知，采用蘑菇型结构器件单元的操作电流约为1.2mA，而采用本发明的部分限定型相变材料结构的器件单元的操作电流约为0.7mA，降幅超过40％，直观地体现了本发明的优越性。As an example, the lead-out electrode 17 is used to integrate the phase-change memory unit with its control switch, drive circuit and peripheral circuits, so as to prepare a complete phase-change memory device unit. The comparison diagram of the operating current of the phase-change memory cell comprising a partially defined phase-change material structure of the present invention and the phase-change memory cell of a mushroom-type phase-change material structure is shown in Figure 14. It can be seen from Figure 14 that the mushroom-type structure device The operating current of the unit is about 1.2mA, while the operating current of the device unit adopting the partially limited phase-change material structure of the present invention is about 0.7mA, a decrease of more than 40%, intuitively reflecting the superiority of the present invention.
本发明的相变存储单元中采用部分限定型相变材料结构，其特点是通过加热电极回刻形成的限定孔内填充相变材料，使得相变存储器相变过程中发生相变的区域仅局限于限定孔内，与传统蘑菇型器件结构相比，由于相变体积减小，从而大大降低器件功耗和提高相变速度，而与完全限定型相变材料器件结构相比，其优点是不需要引入相变材料的化学机械抛光工艺就能够实现完全限定型相变材料器件结构低功耗和高速特性，从而避免了相变材料上表面在抛光工艺过程中的损伤。The phase change memory unit of the present invention adopts a partially limited phase change material structure, which is characterized in that the phase change material is filled in the limited hole formed by the heating electrode back etching, so that the area where the phase change occurs during the phase change process of the phase change memory is only limited In the defined hole, compared with the traditional mushroom-type device structure, the power consumption of the device is greatly reduced and the phase change speed is increased due to the reduced volume of the phase change. Compared with the fully defined phase-change material device structure, its advantage is that it does not It is necessary to introduce the chemical mechanical polishing process of the phase change material to realize the low power consumption and high-speed characteristics of the fully defined phase change material device structure, thereby avoiding the damage of the upper surface of the phase change material during the polishing process.
请继续参阅图12及图13，本发明还提供一种包含部分限定型相变材料结构的相变存储单元，所述包含部分限定型相变材料结构的相变存储单元采用上述方案中所述的制作方法制作而得到，所述包含部分限定型相变材料结构的相变存储单元包括：衬底10；下电极11，所述下电极11镶嵌于所述衬底10内，且上表面与所述衬底10的上表面相平齐；加热电极12，所述加热电极12位于所述下电极11的上表面；部分限定型相变材料结构15，所述部分限定型相变材料结构15位于所述加热电极12的表面；上电极16，所述上电极16位于所述部分限定型相变材料结构15的表面；引出电极17，所述引出电极17位于所述上电极16的表面。Please continue to refer to Fig. 12 and Fig. 13, the present invention also provides a phase-change memory cell comprising a partially defined phase-change material structure, the phase-change memory cell comprising a partially defined phase-change material structure adopts the above scheme The phase change memory cell comprising a partially defined phase change material structure includes: a substrate 10; a lower electrode 11, the lower electrode 11 is embedded in the substrate 10, and the upper surface and The upper surface of the substrate 10 is flush; the heating electrode 12, the heating electrode 12 is located on the upper surface of the lower electrode 11; the partially defined phase change material structure 15, the partially defined phase change material structure 15 Located on the surface of the heating electrode 12; the upper electrode 16, the upper electrode 16 is located on the surface of the partially defined phase change material structure 15; the extraction electrode 17, the extraction electrode 17 is located on the surface of the upper electrode 16.
作为示例，所述衬底10中形成至少四个所述下电极11，所述下电极11呈至少两行及至少两列的点阵式分布。As an example, at least four of the lower electrodes 11 are formed in the substrate 10 , and the lower electrodes 11 are distributed in a lattice form of at least two rows and at least two columns.
作为示例，所述下电极11贯穿所述衬底10，且所述下电极11的下表面与所述衬底10的下表面相平齐。As an example, the lower electrode 11 runs through the substrate 10 , and the lower surface of the lower electrode 11 is flush with the lower surface of the substrate 10 .
作为示例，所述加热电极12可以为圆柱形加热电极或刀片状加热电极，所述圆柱形加热电极的直径可以为1nm～100nm，高度可以为50nm～150nm，所述刀片状加热电极的横截面尺寸可以为1nm～30nm×5nm～100nm，高度可以为50nm～150nm。As an example, the heating electrode 12 can be a cylindrical heating electrode or a blade-shaped heating electrode. The diameter of the cylindrical heating electrode can be 1 nm to 100 nm, and the height can be 50 nm to 150 nm. The cross-section of the blade-shaped heating electrode The size may be 1nm-30nm×5nm-100nm, and the height may be 50nm-150nm.
作为示例，所述加热电极12的材料可以为导电的氮化物，优选地，所述加热电极12的材料可以为氮化钛、氮化硅钛或氮化铝钛。As an example, the material of the heating electrode 12 may be conductive nitride, preferably, the material of the heating electrode 12 may be titanium nitride, silicon titanium nitride or aluminum titanium nitride.
作为示例，所述部分限定型相变材料结构15的纵截面形状为T形，包括第一部分151及第二部分152，所述第一部分151填满所述限定型孔结构14，所述第二部分152位于所述第一部分151的上表面，且所述第二部分152的横向尺寸大于所述第一部分151的横向尺寸。As an example, the longitudinal cross-sectional shape of the partially defined phase change material structure 15 is T-shaped, including a first part 151 and a second part 152, the first part 151 fills the defined hole structure 14, and the second The portion 152 is located on the upper surface of the first portion 151 , and the lateral dimension of the second portion 152 is larger than that of the first portion 151 .
作为示例，所述包含部分限定型相变材料结构的相变存储单元还包括第一绝缘材料层13，所述第一绝缘材料层13位于所述加热电极12及所述第一部分151之间的所述衬底10表面。所述第一绝缘材料层13用于隔离相邻的所述加热电极12。所述第一绝缘材料层13的材料可以为氮化物、氧化物、氮氧化物或碳化物。As an example, the phase-change memory cell comprising a partially defined phase-change material structure further includes a first insulating material layer 13, and the first insulating material layer 13 is located between the heating electrode 12 and the first portion 151. the surface of the substrate 10 . The first insulating material layer 13 is used to isolate adjacent heating electrodes 12 . The material of the first insulating material layer 13 may be nitride, oxide, oxynitride or carbide.
作为示例，所述包含部分限定型相变材料结构的相变存储单元还包括第二绝缘材料层18及第三绝缘材料层19，所述第二绝缘材料层18位于所述部分限定型相变材料结构15及所述上电极16之间的所述第一绝缘材料层13表面，所述第三绝缘材料层19位于所述引出电极17之间的所述第二绝缘材料层18表面。所述第二绝缘材料层18位于相邻的所述部分限定型相变材料结构15之间及相邻的所述上电极16之间，所述第二绝缘材料层18用于隔离相邻的所述部分限定型相变材料结构15及相邻的所述上电极16；所述第二绝缘材料层18的材料可以为氮化物、氧化物、氮氧化物或碳化物。所述第三绝缘材料层18位于相邻的所述引出电极17之间，所述第三绝缘材料层18用于隔离相邻的所述引出电极17；所述第三绝缘材料层18的材料可以为氮化物、氧化物、氮氧化物或碳化物。As an example, the phase change memory cell comprising a partially defined phase change material structure further includes a second insulating material layer 18 and a third insulating material layer 19, the second insulating material layer 18 is located at the partially defined phase change The surface of the first insulating material layer 13 between the material structure 15 and the upper electrode 16 , the third insulating material layer 19 is located on the surface of the second insulating material layer 18 between the extraction electrodes 17 . The second insulating material layer 18 is located between adjacent partially defined phase-change material structures 15 and between adjacent upper electrodes 16, and the second insulating material layer 18 is used to isolate adjacent The partially defined phase-change material structure 15 and the adjacent upper electrode 16; the material of the second insulating material layer 18 may be nitride, oxide, oxynitride or carbide. The third insulating material layer 18 is located between the adjacent extraction electrodes 17, and the third insulating material layer 18 is used to isolate the adjacent extraction electrodes 17; the material of the third insulating material layer 18 Can be nitrides, oxides, oxynitrides or carbides.
综上所述，本发明提供一种包含部分限定型相变材料结构的相变存储单元及制作方法，所述包含部分限定型相变材料结构的相变存储单元的制作方法至少包括以下步骤：1)提供衬底，在所述衬底内形成至少一个下电极，所述下电极镶嵌于所述衬底内，且所述下电极的上表面与所述衬底的上表面相平齐；2)在所述下电极的上表面形成加热电极，并在所述加热电极之间的所述衬底表面形成第一绝缘材料层；3)采用回刻工艺刻蚀去除部分所述加热电极及所述第一绝缘材料层，在所述加热电极上方的所述第一绝缘材料层内形成限定型孔结构；4)在所述限定型孔结构内形成部分限定型相变材料结构，并在所述部分限定型相变材料结构表面形成上电极；5)在所述上电极表面形成引出电极。本发明的相变存储单元中采用部分限定型相变材料结构，其特点是通过加热电极回刻形成的限定孔内填充相变材料，使得相变存储器相变过程中发生相变的区域仅局限于限定孔内，与传统蘑菇型器件结构相比，相变体积大幅度减小，且T型相变材料的第二部分始终处于晶态，在器件单元的结晶化操作过程中可作为T型相变材料第一部分晶化的籽晶，加快结晶过程，可以大大降低器件功耗并提高相变速度，与完全限定型相变材料器件结构相比，不需要引入相变材料的化学机械抛光工艺，避免了对相变材料上表面的损伤。In summary, the present invention provides a phase-change memory unit comprising a partially defined phase-change material structure and a manufacturing method thereof, and the manufacturing method of the phase-change memory unit comprising a partially defined phase-change material structure at least includes the following steps: 1) providing a substrate, forming at least one lower electrode in the substrate, the lower electrode is embedded in the substrate, and the upper surface of the lower electrode is flush with the upper surface of the substrate; 2) forming a heating electrode on the upper surface of the lower electrode, and forming a first insulating material layer on the surface of the substrate between the heating electrodes; 3) using an etching-back process to etch and remove part of the heating electrode and In the first insulating material layer, a defined hole structure is formed in the first insulating material layer above the heating electrode; 4) a partially defined phase change material structure is formed in the defined hole structure, and An upper electrode is formed on the surface of the partially defined phase-change material structure; 5) an extraction electrode is formed on the surface of the upper electrode. The phase change memory unit of the present invention adopts a partially limited phase change material structure, which is characterized in that the phase change material is filled in the limited hole formed by the heating electrode back etching, so that the area where the phase change occurs during the phase change process of the phase change memory is only limited In the defined hole, compared with the traditional mushroom-type device structure, the phase change volume is greatly reduced, and the second part of the T-type phase-change material is always in the crystalline state, which can be used as a T-type during the crystallization operation of the device unit. The first part of the crystallized seed crystal of the phase change material accelerates the crystallization process, which can greatly reduce the power consumption of the device and increase the phase change speed. Compared with the fully defined phase change material device structure, it does not need to introduce the chemical mechanical polishing process of the phase change material , to avoid damage to the upper surface of the phase change material.
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention shall still be covered by the claims of the present invention.
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| CN201610066316.XACN105633279A (en) | 2016-01-29 | 2016-01-29 | Phase-change memory unit comprising partially defined phase-change material structures and fabrication method |
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