技术领域technical field
本发明涉及一种压力传感器，具体来说，涉及一种具有高线性度的电容式压力传感器及其制备方法。The invention relates to a pressure sensor, in particular to a capacitive pressure sensor with high linearity and a preparation method thereof.
背景技术Background technique
在利用硅微加工技术实现的产品中，压力传感器是发展较为成熟的一类。目前，压力传感器已广泛应用于各种工业和生物医学领域。电容式压力传感器由于高灵敏度，更好的温度性能，低功耗，无开启温度漂移，结构坚固，受外应力影响小等特点，逐渐成为压力传感器的一大热点。传统的变面积式的电容式压力传感器也称接触式电容传感器，当压力施加于可动敏感薄膜层时，通过改变两极板的接触面积，从而改变传感器的输出电容。由于传感器的两极板相互接触，可能会出现两极板当压力撤去时不能分离，粘连在一起，从而带来可靠性不高的问题。Among the products realized by silicon micromachining technology, the pressure sensor is a relatively mature category. At present, pressure sensors have been widely used in various industrial and biomedical fields. Capacitive pressure sensors have gradually become a hot spot for pressure sensors due to their high sensitivity, better temperature performance, low power consumption, no temperature drift, firm structure, and little influence from external stress. The traditional variable-area capacitive pressure sensor is also called a contact capacitive sensor. When the pressure is applied to the movable sensitive film layer, the output capacitance of the sensor is changed by changing the contact area of the two polar plates. Since the two polar plates of the sensor are in contact with each other, the two polar plates may not be separated when the pressure is removed, and may stick together, thus causing a problem of low reliability.
发明内容Contents of the invention
技术问题：本发明所要解决的技术问题是：提供一种具有高线性度的电容式压力传感器及其制备方法，将纵向的位移变化转化为横向面积变化，具有高线性度，同时压力传感器的上下极板之间是非接触的，提高了器件的可靠性。Technical problem: The technical problem to be solved by the present invention is: to provide a capacitive pressure sensor with high linearity and its preparation method, which converts the longitudinal displacement change into the lateral area change, has high linearity, and at the same time the pressure sensor's up and down There is no contact between the plates, which improves the reliability of the device.
技术方案：为解决上述技术问题，一方面，本发明实施例采用一种具有高线性度的电容式压力传感器，该压力传感器包括从下向上依次布设的硅衬底层、二氧化硅层和多晶硅层；其中，硅衬底层中设有第一空腔和四个下电极，第一空腔贯穿硅衬底层，下电极固定连接在硅衬底层的上部，四个下电极布设在第一空腔的四周；二氧化硅层中设有多晶硅支撑层和第二空腔，多晶硅支撑层固定连接在硅衬底层的顶面；第二空腔位于多晶硅支撑层的内侧，且第二空腔与第一空腔连通；多晶硅层包括可动敏感薄膜层、四个上电极、多晶硅锚区，可动敏感薄膜层和上电极均位于第二空腔正上方，且每个上电极的一端通过连接杆与可动敏感薄膜层的一端面连接，每个上电极的另一端通过弹性件与多晶硅锚区连接；连接杆和弹性件相对布设，分别位于上电极两侧；多晶硅锚区固定连接在多晶硅支撑层上；上电极和下电极一一对应，下电极位于连接杆的下方，且上电极靠近可动敏感薄膜层的端面和下电极远离第一空腔的端面处于同一面中。Technical solution: In order to solve the above technical problems, on the one hand, the embodiment of the present invention adopts a capacitive pressure sensor with high linearity, the pressure sensor includes a silicon substrate layer, a silicon dioxide layer and a polysilicon layer arranged sequentially from bottom to top ; Wherein, the silicon substrate layer is provided with the first cavity and four lower electrodes, the first cavity runs through the silicon substrate layer, the lower electrode is fixedly connected to the top of the silicon substrate layer, and the four lower electrodes are arranged in the first cavity surrounding; the silicon dioxide layer is provided with a polysilicon supporting layer and a second cavity, and the polysilicon supporting layer is fixedly connected to the top surface of the silicon substrate layer; the second cavity is located inside the polysilicon supporting layer, and the second cavity is connected to the first The cavity is connected; the polysilicon layer includes a movable sensitive film layer, four upper electrodes, and a polysilicon anchor area, and the movable sensitive film layer and the upper electrode are located directly above the second cavity, and one end of each upper electrode is connected to the One end of the movable sensitive film layer is connected, and the other end of each upper electrode is connected to the polysilicon anchor area through an elastic member; the connecting rod and the elastic member are arranged oppositely, and are respectively located on both sides of the upper electrode; the polysilicon anchor area is fixedly connected to the polysilicon support layer Upper: The upper electrode corresponds to the lower electrode one by one, the lower electrode is located below the connecting rod, and the end surface of the upper electrode close to the movable sensitive film layer and the end surface of the lower electrode away from the first cavity are in the same plane.
作为优选方案，所述的弹性件由多晶硅制成，且弹性件呈弯折形。As a preferred solution, the elastic member is made of polysilicon, and the elastic member is bent.
作为优选方案，所述的可动敏感薄膜层、上电极、多晶硅锚区、弹性件和连接杆位于同一平面内。As a preferred solution, the movable sensitive film layer, the upper electrode, the polysilicon anchor area, the elastic member and the connecting rod are located in the same plane.
另一方面，本发明实施例提供一种具有高线性度的电容式压力传感器的制备方法，该制备方法包括以下步骤：On the other hand, an embodiment of the present invention provides a method for manufacturing a capacitive pressure sensor with high linearity, and the method includes the following steps:
第一步：在硅衬底层上进行磷离子注入，形成传感器的下电极；Step 1: Phosphorus ion implantation is performed on the silicon substrate layer to form the lower electrode of the sensor;
第二步：在硅衬底层上生长一层二氧化硅层，然后采用光刻工艺在二氧化硅层上形成多晶硅支撑层和湿法腐蚀的停止层；Step 2: growing a silicon dioxide layer on the silicon substrate layer, and then forming a polysilicon support layer and a wet etching stop layer on the silicon dioxide layer by photolithography;
第三步：在二氧化硅层上生长一层多晶硅层，然后采用光刻工艺，在多晶硅层光刻形成可动敏感薄膜层、传感器的上电极、多晶硅锚区、弹性件和连接杆；Step 3: grow a layer of polysilicon on the silicon dioxide layer, and then use photolithography to form a movable sensitive film layer, upper electrode of the sensor, polysilicon anchor area, elastic parts and connecting rods on the polysilicon layer;
第四步：在硅衬底层背面进行各向异性湿法刻蚀，形成第一空腔；Step 4: performing anisotropic wet etching on the back side of the silicon substrate layer to form a first cavity;
第五步：利用各向异性湿法腐蚀，腐蚀停止层，得到第二空腔，从而制成压力传感器。Step five: use anisotropic wet etching to etch the stop layer to obtain a second cavity, thereby making a pressure sensor.
作为优选方案，所述的第三步中，上电极为四个，可动敏感薄膜层和上电极均位于第二空腔正上方，且每个上电极的一端通过连接杆与可动敏感薄膜层的一端面连接，每个上电极的另一端通过弹性件与多晶硅锚区连接；连接杆和弹性件相对布设，分别位于上电极两侧；多晶硅锚区固定连接在多晶硅支撑层上。As a preferred solution, in the third step, there are four upper electrodes, the movable sensitive film layer and the upper electrode are located directly above the second cavity, and one end of each upper electrode is connected to the movable sensitive film through the connecting rod. One end of the layer is connected, and the other end of each upper electrode is connected to the polysilicon anchor area through an elastic member; the connecting rod and the elastic member are arranged oppositely, and are respectively located on both sides of the upper electrode; the polysilicon anchor area is fixedly connected to the polysilicon support layer.
作为优选方案，所述的第三步中，所述的弹性件由多晶硅制成，且弹性件呈弯折形。As a preferred solution, in the third step, the elastic member is made of polysilicon, and the elastic member is bent.
作为优选方案，所述的第三步中，所述的可动敏感薄膜层、上电极、多晶硅锚区、弹性件和连接杆位于同一平面内。As a preferred solution, in the third step, the movable sensitive film layer, the upper electrode, the polysilicon anchor region, the elastic member and the connecting rod are located in the same plane.
有益效果：与现有技术相比，本发明实施例具有以下有益效果：本实施例的压力传感器的灵敏度高，制备工艺主要采用表面微机械加工技术，工艺简单，可行性高。本实施例的电容式压力传感器将上下极板之间的纵向的位移变化转化为横向面积变化。此结构的变面积式压力传感器是非接触的。传统的变面积式的电容式压力传感器也称接触式电容传感器，当压力施加于可动敏感薄膜层时，通过改变两极板的接触面积，从而改变传感器的输出电容。由于传感器的两极板相互接触，可能出现当压力撤去时，两极板不能分离，粘连在一起，从而带来可靠性问题。本实施例的电容式压力传感器，当压力施加于可动敏感薄膜层时，薄膜向下弯曲，带动与之相连的上电极向薄膜中心靠近，从而改变与下电极的正对面积，因此改变传感器的输出电容。由于本实施例改变的两极板的正对面积，不会出现粘连问题，可靠性较高。Beneficial effects: Compared with the prior art, the embodiment of the present invention has the following beneficial effects: the pressure sensor of this embodiment has high sensitivity, the preparation process mainly adopts surface micromachining technology, the process is simple, and the feasibility is high. The capacitive pressure sensor of this embodiment converts the longitudinal displacement change between the upper and lower plates into a transverse area change. The variable area pressure sensor of this structure is non-contact. The traditional variable-area capacitive pressure sensor is also called a contact capacitive sensor. When the pressure is applied to the movable sensitive film layer, the output capacitance of the sensor is changed by changing the contact area of the two polar plates. Since the two polar plates of the sensor are in contact with each other, it may occur that when the pressure is removed, the two polar plates cannot be separated and stick together, thereby causing reliability problems. In the capacitive pressure sensor of this embodiment, when pressure is applied to the movable sensitive film layer, the film bends downward, driving the upper electrode connected to it to approach the center of the film, thereby changing the area facing the lower electrode, thus changing the sensor the output capacitance. Due to the changed facing areas of the two polar plates in this embodiment, there is no problem of adhesion, and the reliability is high.
附图说明Description of drawings
图1为本发明实施例中压力传感器的结构剖视图；Fig. 1 is a structural sectional view of a pressure sensor in an embodiment of the present invention;
图2为本发明实施例中制备方法第一步的结构剖视图；Fig. 2 is the structural sectional view of the first step of the preparation method in the embodiment of the present invention;
图3是本发明实施例中制备方法第二步的结构剖视图；Fig. 3 is the structural sectional view of the second step of the preparation method in the embodiment of the present invention;
图4是本发明实施例中制备方法第三步的结构剖视图；Fig. 4 is the structural sectional view of the third step of the preparation method in the embodiment of the present invention;
图5是本发明实施例中制备方法第四步的结构剖视图；Fig. 5 is a structural cross-sectional view of the fourth step of the preparation method in the embodiment of the present invention;
图6是本发明实施例中制备方法第五步的结构剖视图；Fig. 6 is a structural cross-sectional view of the fifth step of the preparation method in the embodiment of the present invention;
图7是本发明实施例中多晶硅层和传感器下电极相对位置的俯视图。Fig. 7 is a top view of the relative positions of the polysilicon layer and the lower electrode of the sensor in the embodiment of the present invention.
图中有：硅衬底层1、二氧化硅层2、多晶硅层3、下电极101、第一空腔 102、多晶硅支撑层201、第二空腔202、湿法腐蚀停止层203、可动敏感薄膜层301、上电极302、多晶硅锚区303、弹性件304、连接杆305。In the figure, there are: silicon substrate layer 1, silicon dioxide layer 2, polysilicon layer 3, lower electrode 101, first cavity 102, polysilicon support layer 201, second cavity 202, wet etching stop layer 203, movable sensitive A thin film layer 301 , an upper electrode 302 , a polysilicon anchor region 303 , an elastic member 304 , and a connecting rod 305 .
具体实施方式Detailed ways
下面结合附图，对本发明的技术方案进行详细的说明。The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.
如图1所示，本发明实施例的一种具有高线性度的电容式压力传感器，包括从下向上依次布设的硅衬底层1、二氧化硅层2和多晶硅层3。硅衬底层1中设有第一空腔102和四个下电极101，第一空腔102贯穿硅衬底层1，下电极101 固定连接在硅衬底层1的上部，四个下电极101布设在第一空腔102的四周。二氧化硅层2中设有多晶硅支撑层201和第二空腔202，多晶硅支撑层201固定连接在硅衬底层1的顶面。第二空腔202位于多晶硅支撑层201的内侧，且第二空腔202与第一空腔102连通。多晶硅层3包括可动敏感薄膜层301、四个上电极302、多晶硅锚区303，可动敏感薄膜层301和上电极302均位于第二空腔202 正上方，且每个上电极302的一端通过连接杆305与可动敏感薄膜层301的一端面连接，每个上电极302的另一端通过弹性件304与多晶硅锚区303连接。连接杆305和弹性件304相对布设。连接杆305和弹性件304分别位于上电极302 两侧。多晶硅锚区303固定连接在多晶硅支撑层201上。上电极302和下电极 101一一对应，下电极101位于连接杆305的下方，且上电极302靠近可动敏感薄膜层301的端面和下电极101远离第一空腔102的端面处于同一面中。As shown in FIG. 1 , a capacitive pressure sensor with high linearity according to an embodiment of the present invention includes a silicon substrate layer 1 , a silicon dioxide layer 2 and a polysilicon layer 3 sequentially arranged from bottom to top. The silicon substrate layer 1 is provided with a first cavity 102 and four lower electrodes 101, the first cavity 102 runs through the silicon substrate layer 1, the lower electrode 101 is fixedly connected to the top of the silicon substrate layer 1, and the four lower electrodes 101 are arranged on around the first cavity 102 . The silicon dioxide layer 2 is provided with a polysilicon support layer 201 and a second cavity 202 , and the polysilicon support layer 201 is fixedly connected to the top surface of the silicon substrate layer 1 . The second cavity 202 is located inside the polysilicon support layer 201 , and the second cavity 202 communicates with the first cavity 102 . The polysilicon layer 3 includes a movable sensitive thin film layer 301, four upper electrodes 302, and a polysilicon anchor region 303, the movable sensitive thin film layer 301 and the upper electrodes 302 are located directly above the second cavity 202, and one end of each upper electrode 302 The connecting rod 305 is connected to one end of the movable sensitive thin film layer 301 , and the other end of each upper electrode 302 is connected to the polysilicon anchor region 303 through the elastic member 304 . The connecting rod 305 and the elastic member 304 are arranged oppositely. The connecting rod 305 and the elastic member 304 are respectively located on two sides of the upper electrode 302 . The polysilicon anchor region 303 is fixedly connected to the polysilicon supporting layer 201 . The upper electrode 302 corresponds to the lower electrode 101 one by one, the lower electrode 101 is located below the connecting rod 305, and the end surface of the upper electrode 302 close to the movable sensitive film layer 301 and the end surface of the lower electrode 101 away from the first cavity 102 are in the same plane .
上述结构的电容式压力传感器工作时，当压力施加于可动敏感薄膜层301 时，可动敏感薄膜层301向下弯曲，带动与之相连的上电极302向可动敏感薄膜层301中心靠近。下电极101的位置是不变的。由于上电极302向可动敏感薄膜层301中心靠近，从而改变压力传感器上电极302和下电极101之间的正对面积，进而改变压力传感器的输出电容。通过检测输出电容的变化，可以实现压力测量。该实施例的电容式压力传感器，将纵向的位移变化转化为横向面积变化。在横向面积变化过程中，上电极302和下电极101之间是非接触的。这样就确保了外界压力去除时，上电极302和下电极101不会粘接在一起。本实施例的压力传感器将纵向的位移变化转化为横向的面积变化，且上电极302和下电极101之间间隔第二空腔202，确保了上电极302和下电极101之间始终是非接触的状态。When the capacitive pressure sensor with the above structure is working, when pressure is applied to the movable sensitive film layer 301 , the movable sensitive film layer 301 bends downward, driving the upper electrode 302 connected to it to approach the center of the movable sensitive film layer 301 . The position of the lower electrode 101 is not changed. Since the upper electrode 302 approaches the center of the movable sensitive film layer 301, the facing area between the upper electrode 302 and the lower electrode 101 of the pressure sensor is changed, thereby changing the output capacitance of the pressure sensor. Pressure measurement can be achieved by detecting the change in output capacitance. The capacitive pressure sensor of this embodiment converts the longitudinal displacement change into the lateral area change. During the lateral area change process, there is no contact between the upper electrode 302 and the lower electrode 101 . This ensures that the upper electrode 302 and the lower electrode 101 will not stick together when the external pressure is removed. The pressure sensor of this embodiment converts the longitudinal displacement change into the transverse area change, and the second cavity 202 is separated between the upper electrode 302 and the lower electrode 101, ensuring that the upper electrode 302 and the lower electrode 101 are always non-contact state.
同时，本实施例的电容式压力传感器，具有高线性度。本实施例的电容式压力传感器其原理是基于变面积。根据平板电容公式：可知，电容与面积成线性关系。其中，C表示压力传感器的电容，ε0表示真空介电常数，εr表示介质层的相对介电常数(本实施例的介质层为空气)，A表示上电极302和下电极101之间重叠的面积，d表示上电极302和下电极101的间距。At the same time, the capacitive pressure sensor of this embodiment has high linearity. The principle of the capacitive pressure sensor of this embodiment is based on variable area. According to the plate capacitance formula: It can be seen that the capacitance has a linear relationship with the area. Wherein, C represents the capacitance of the pressure sensor, ε0 represents the vacuum permittivity, εr represents the relative permittivity of the dielectric layer (the dielectric layer in this embodiment is air), and A represents the overlap between the upper electrode 302 and the lower electrode 101 The area of , d represents the distance between the upper electrode 302 and the lower electrode 101 .
作为一种优选方案，所述的弹性件304由多晶硅制成，且弹性件304呈弯折形。弹性件304由多晶硅制成，便于在制备多晶硅层3时，整体制备可动敏感薄膜层301、四个上电极302、多晶硅锚区303和连接杆304。弹性件304呈弯折形，使得其具有一定的弹性，结构也简单可靠。As a preferred solution, the elastic member 304 is made of polysilicon, and the elastic member 304 is bent. The elastic member 304 is made of polysilicon, which facilitates the overall preparation of the movable sensitive film layer 301 , the four upper electrodes 302 , the polysilicon anchor region 303 and the connecting rod 304 when preparing the polysilicon layer 3 . The elastic member 304 is bent so that it has a certain degree of elasticity, and the structure is simple and reliable.
作为一种优选方案，所述的可动敏感薄膜层301、上电极302和多晶硅锚区 303位于同一平面内。将多晶硅层3中的各部件置于同一平面内，便于制造加工。As a preferred solution, the movable sensitive film layer 301, the upper electrode 302 and the polysilicon anchor region 303 are located in the same plane. All components in the polysilicon layer 3 are placed in the same plane, which is convenient for manufacturing and processing.
上述结构的电容式压力传感器的制备方法，包括以下步骤：The preparation method of the capacitive pressure sensor of the above structure comprises the following steps:
第一步：如图2所示，在硅衬底层1上进行磷离子注入，形成传感器的下电极101。Step 1: As shown in FIG. 2 , phosphorus ion implantation is performed on the silicon substrate layer 1 to form the lower electrode 101 of the sensor.
第二步：如图3所示，在硅衬底层1上生长一层二氧化硅层2，然后采用光刻工艺在二氧化硅层2上形成多晶硅支撑层201和湿法腐蚀的停止层203。The second step: as shown in FIG. 3 , grow a layer of silicon dioxide layer 2 on the silicon substrate layer 1, and then use a photolithography process to form a polysilicon support layer 201 and a stop layer 203 for wet etching on the silicon dioxide layer 2 .
第三步：如图4所示，在二氧化硅层2上生长一层多晶硅层3，然后采用光刻工艺，在多晶硅层3光刻形成可动敏感薄膜层301、传感器的上电极302、多晶硅锚区303、弹性件304和连接杆305。上电极302为四个，可动敏感薄膜层 301和上电极302均位于第二空腔202正上方，且每个上电极302的一端通过连接杆305与可动敏感薄膜层301的一端面连接，每个上电极302的另一端通过弹性件304与多晶硅锚区303连接，连接杆305和弹性件304相对布设,分别位于上电极302两侧；多晶硅锚区303固定连接在多晶硅支撑层201上。The third step: as shown in FIG. 4 , grow a layer of polysilicon layer 3 on the silicon dioxide layer 2 , and then use photolithography to form a movable sensitive film layer 301 , an upper electrode 302 of the sensor, etc. on the polysilicon layer 3 . The polysilicon anchor region 303 , the elastic member 304 and the connecting rod 305 . There are four upper electrodes 302, the movable sensitive film layer 301 and the upper electrode 302 are located directly above the second cavity 202, and one end of each upper electrode 302 is connected to one end surface of the movable sensitive film layer 301 through a connecting rod 305 , the other end of each upper electrode 302 is connected to the polysilicon anchor region 303 through the elastic member 304, the connecting rod 305 and the elastic member 304 are arranged oppositely, and are respectively located on both sides of the upper electrode 302; the polysilicon anchor region 303 is fixedly connected to the polysilicon support layer 201 .
第四步：如图5所示，在硅衬底层1背面进行各向异性湿法刻蚀，形成第一空腔102。Step 4: As shown in FIG. 5 , perform anisotropic wet etching on the back side of the silicon substrate layer 1 to form a first cavity 102 .
第五步：如图6所示，利用各向异性湿法腐蚀，腐蚀停止层203，得到第二空腔202，从而制成压力传感器。Step 5: As shown in FIG. 6 , anisotropic wet etching is used to etch the stop layer 203 to obtain a second cavity 202 , thereby making a pressure sensor.
上述实施例的电容式压力传感器中，硅衬底层1中的下电极101通过离子注入形成。硅衬底层1中的第一空腔102通过湿法腐蚀形成。可动敏感薄膜层301、上电极302、弹性件304和多晶硅锚区303位于同一平面，而且材料都是多晶硅。在工艺上，这些部件通过生长一层多晶硅材料，然后光刻形成可动敏感薄膜层 301、上电极302、弹性件304和多晶硅锚区303四个部件。弹性件304的存在使得上电极302向可动敏感薄膜层301中心移动更加容易。In the capacitive pressure sensor of the above embodiment, the lower electrode 101 in the silicon substrate layer 1 is formed by ion implantation. The first cavity 102 in the silicon substrate layer 1 is formed by wet etching. The movable sensitive film layer 301 , the upper electrode 302 , the elastic member 304 and the polysilicon anchor region 303 are located on the same plane, and the materials are all polysilicon. In terms of technology, these components grow a layer of polysilicon material, and then photolithography forms four components: a movable sensitive film layer 301, an upper electrode 302, an elastic member 304 and a polysilicon anchor region 303. The presence of the elastic member 304 makes it easier for the upper electrode 302 to move toward the center of the movable sensitive film layer 301 .
以上显示和描述了本发明的基本原理、主要特征和优点。本领域的技术人员应该了解，本发明不受上述具体实施例的限制，上述具体实施例和说明书中的描述只是为了进一步说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护的范围由权利要求书及其等效物界定。The basic principles, main features and advantages of the present invention have been shown and described above. Those skilled in the art should understand that the present invention is not limited by the above-mentioned specific examples. The descriptions in the above-mentioned specific examples and the description are only to further illustrate the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention The invention also has various changes and improvements, and these changes and improvements all fall within the scope of the claimed invention. The protection scope of the present invention is defined by the claims and their equivalents.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510580359.5ACN105606269B (en) | 2015-09-11 | 2015-09-11 | A kind of capacitance pressure transducer, with high linearity and preparation method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510580359.5ACN105606269B (en) | 2015-09-11 | 2015-09-11 | A kind of capacitance pressure transducer, with high linearity and preparation method thereof |
| Publication Number | Publication Date |
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| CN105606269A CN105606269A (en) | 2016-05-25 |
| CN105606269Btrue CN105606269B (en) | 2018-04-03 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510580359.5AActiveCN105606269B (en) | 2015-09-11 | 2015-09-11 | A kind of capacitance pressure transducer, with high linearity and preparation method thereof |
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| CN (1) | CN105606269B (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273633A (en)* | 1998-06-09 | 2000-11-15 | 株式会社山武 | Static capaitance type sensor |
| CN1484008A (en)* | 2003-06-10 | 2004-03-24 | 东南大学 | Multilayer film capacitive pressure sensor |
| CN102252795A (en)* | 2011-05-05 | 2011-11-23 | 中国科学院国家天文台 | Capacitive cable tension sensor |
| CN102509613A (en)* | 2011-09-27 | 2012-06-20 | 汉王科技股份有限公司 | Variable capacitor and position indicator using same |
| CN104848971A (en)* | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | CAPACITIVE PRESSURE SENSOR, pressure detector and INPUT DEVICE |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187264B2 (en)* | 2003-02-20 | 2007-03-06 | Iee International Electronics & Engineering S.A. | Foil-type switching element with improved spacer design |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273633A (en)* | 1998-06-09 | 2000-11-15 | 株式会社山武 | Static capaitance type sensor |
| CN1484008A (en)* | 2003-06-10 | 2004-03-24 | 东南大学 | Multilayer film capacitive pressure sensor |
| CN102252795A (en)* | 2011-05-05 | 2011-11-23 | 中国科学院国家天文台 | Capacitive cable tension sensor |
| CN102509613A (en)* | 2011-09-27 | 2012-06-20 | 汉王科技股份有限公司 | Variable capacitor and position indicator using same |
| CN104848971A (en)* | 2014-02-14 | 2015-08-19 | 欧姆龙株式会社 | CAPACITIVE PRESSURE SENSOR, pressure detector and INPUT DEVICE |
| Publication number | Publication date |
|---|---|
| CN105606269A (en) | 2016-05-25 |
| Publication | Publication Date | Title |
|---|---|---|
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