技术领域technical field
本发明涉及微波滤波器技术领域，具体涉及一种具有滤波特性的波导到微带过渡结构。The invention relates to the technical field of microwave filters, in particular to a waveguide-to-microstrip transition structure with filtering characteristics.
背景技术Background technique
矩形波导具有导体损耗小、功率容量大、无辐射损耗、结构简单、易于制造等优点，广泛应用3000MHz～300GHz的微波频段和毫米波频段的通信、雷达、遥感、电子对抗和测量等系统中。在20世纪50年代以前，所有的微波设备几乎都是采用波导或者同轴线。随着毫米波技术的发展，毫米波混合集成电路与单片集成电路在通信、雷达、制导以及其它一些系统中得到广泛地应用。Rectangular waveguide has the advantages of small conductor loss, large power capacity, no radiation loss, simple structure, and easy manufacture. It is widely used in communication, radar, remote sensing, electronic countermeasures and measurement systems in the microwave frequency band of 3000MHz to 300GHz and millimeter wave frequency band. Before the 1950s, almost all microwave equipment used waveguides or coaxial cables. With the development of millimeter wave technology, millimeter wave hybrid integrated circuits and monolithic integrated circuits are widely used in communication, radar, guidance and other systems.
目前，在毫米波技术中，微带传输线正在越来越多的场合取代金属波导，成为制作毫米波集成电路的重要传输线。在使用MMIC的毫米波系统中，对各个MMIC之间的连接采用的是微带线。而现有的毫米波测试系统往往采用的是矩形波导接口，这就要求在使用MMIC的系统中寻找一种低成本、低损耗、易制造的矩形波导到微带过渡。目前常用的过渡结构有：阶梯脊波导过渡、对脊鳍线过渡、耦合探针过渡等。这些过渡结构带宽较宽，插入损耗小。为了便于测试、传输以及独立微带电路之间的连接，如何实现波导与微带间的低损耗转换就成了微波毫米波技术研究的重要内容。At present, in millimeter wave technology, microstrip transmission lines are replacing metal waveguides in more and more occasions, becoming an important transmission line for making millimeter wave integrated circuits. In millimeter wave systems using MMICs, microstrip lines are used for the connection between the individual MMICs. However, existing millimeter-wave test systems often use a rectangular waveguide interface, which requires finding a low-cost, low-loss, and easy-to-manufacture transition from a rectangular waveguide to a microstrip in a system using MMIC. Currently commonly used transition structures are: stepped ridge waveguide transition, paired ridge fin line transition, coupled probe transition, etc. These transition structures have wide bandwidth and low insertion loss. In order to facilitate testing, transmission and connection between independent microstrip circuits, how to realize low-loss conversion between waveguide and microstrip has become an important content of microwave and millimeter wave technology research.
微带-探针-波导过渡的插入损耗低，驻波小，重复性好，是毫米波平面集成电路中应用最为广泛的一种过渡结构。在这种结构中微带探针经过一段高阻抗线变换到微带线，利用一段起耦合作用的探针把波导中的电磁场耦合到微带中去。矩形波导中离开过渡探针λ/4的短路面保证探针在波导内处于最大电压，即电场最强位置。介质基片穿过矩形波导，固定在测试腔体上，为基片提供了定位保证。The microstrip-probe-waveguide transition has low insertion loss, small standing wave, and good repeatability, and is the most widely used transition structure in millimeter-wave planar integrated circuits. In this structure, the microstrip probe is transformed into a microstrip line through a high-impedance line, and a coupling probe is used to couple the electromagnetic field in the waveguide to the microstrip. The short-circuit surface away from the transition probe λ/4 in the rectangular waveguide ensures that the probe is at the maximum voltage in the waveguide, that is, the position with the strongest electric field. The dielectric substrate passes through the rectangular waveguide and is fixed on the test cavity, which provides a positioning guarantee for the substrate.
现有的波导到微带过渡主要有以下几种方式来实现：The existing waveguide to microstrip transition is mainly realized in the following ways:
第一种是微带过渡为波导-探针-微带过渡。该波导到微带过渡的插入损耗低，驻波小，重复性好，是毫米波平面集成电路中应用最为广泛的一种过渡结构。但是该结构功能单一、频率选择性差，即：仅具有把能量从波导结构耦合到微带结构的单一功能，不具有一种结构具有多种功能的特性，不利于系统的小型化设计。频率选择性差。该结构可以具有在较宽的一个频带范围内实现较低能量损耗的传输特性，但是频率的选择性比较差。在具体的应用场合下，系统有工作带宽的限制，所以利用此结构不能达到较好带宽选择的目的(Y.-C.Leong,S.Weinreb,"Fullbandwaveguide-to-microstripprobetransitions",IEEEMTT-SMicrowaveSymposiumDiges,Vol.4,pp.1435–1438,June1999)。The first is a microstrip transition to a waveguide-probe-microstrip transition. The waveguide-to-microstrip transition has low insertion loss, small standing waves, and good repeatability, and is the most widely used transition structure in millimeter-wave planar integrated circuits. However, this structure has a single function and poor frequency selectivity, that is, it only has a single function of coupling energy from the waveguide structure to the microstrip structure, and does not have the characteristic that one structure has multiple functions, which is not conducive to the miniaturization design of the system. Poor frequency selectivity. This structure can have the transmission characteristic of realizing lower energy loss in a wider frequency band range, but the frequency selectivity is relatively poor. In specific application occasions, the system has a working bandwidth limitation, so using this structure can not achieve the purpose of better bandwidth selection (Y.-C.Leong, S.Weinreb, "Fullbandwaveguide-to-microstripprobetransitions", IEEEEMTT-SMicrowaveSymposiumDiges, Vol.4, pp.1435–1438, June 1999).
第二种是波导-对极鳍线-微带过渡。在这种结构中，鳍线槽宽逐渐变化到全高金属波导，在面对空波导的鳍线渐变段末端，由介质基片引入的不连续效应通过一段或两段四分之一工作波长变换段减至最小。但是该结构功能单一、频率选择性差，不利于系统的小型化设计(蒲大雁，“基于磁耦合的矩形波导—微带过渡电路研究及应用”，硕士论文，电子科技大学，2009)。The second is the waveguide-antipolar finline-microstrip transition. In this structure, the width of the fin line groove gradually changes to the full-height metal waveguide, and at the end of the fin line transition section facing the empty waveguide, the discontinuity effect introduced by the dielectric substrate is converted by one or two quarter operating wavelengths. segment to a minimum. However, this structure has a single function and poor frequency selectivity, which is not conducive to the miniaturization design of the system (Pu Dayan, "Research and Application of Rectangular Waveguide-Microstrip Transition Circuit Based on Magnetic Coupling", Master Thesis, University of Electronic Science and Technology of China, 2009).
第三种是波导-脊波导-微带过渡。相对于标准波导，加脊波导频带宽、波导内电场分布较为集中，因而决定了它能很好地完成从标准矩形波导到微带过渡所需的场匹配和阻抗匹配。但是该结构功能单一、体积大、频率选择性差，同时需要精确的机械加工，体积也较大，不利于系统的小型化设计(周杨等，“脊波导到微带过渡器的仿真设计”，实验科学与技术，第6卷，第5期，2008年10月)。The third is the waveguide-ridge waveguide-microstrip transition. Compared with the standard waveguide, the frequency bandwidth of the ridged waveguide and the distribution of the electric field inside the waveguide are relatively concentrated, which determines that it can well complete the field matching and impedance matching required for the transition from the standard rectangular waveguide to the microstrip. However, this structure has a single function, large volume, poor frequency selectivity, and requires precise machining, and the volume is also large, which is not conducive to the miniaturization design of the system (Zhou Yang et al., "Simulation Design of Ridge Waveguide to Microstrip Transition Device", Experimental Science and Technology, Volume 6, Issue 5, October 2008).
第四种是波导-同轴探针-微带过渡。采用一个波导同轴过渡结构将传输线从波导转换成同轴系统，再通过同轴微带过渡结构完成转换。但是该结构功能单一、频率选择性差(宋志东等，“一种Ka波段宽带波导-微带转换器的研制”，火控雷达技术，第43卷第4期(总第170期)，2014年l2月)。The fourth is the waveguide-coaxial probe-microstrip transition. A waveguide-coaxial transition structure is used to convert the transmission line from a waveguide to a coaxial system, and then the conversion is completed through a coaxial microstrip transition structure. However, this structure has a single function and poor frequency selectivity (Song Zhidong et al., "Development of a Ka-band broadband waveguide-microstrip converter", Fire Control Radar Technology, Volume 43, Issue 4 (Total Issue 170), 2014 l2 moon).
现有的波导型鳍线滤波器主要有以下几种方式来实现：The existing waveguide fin line filter mainly has the following ways to realize:
在金属波导内加载带有某种电路结构的介质基片，以实现其具有滤波特性的目的。但是该结构在通带外不能引入传输零点而使频率选择性及带外抑制特性差(饶克谨等，“毫米波鳍线滤波器的优化设计”，电子学报，第6期，1988年11月)。A dielectric substrate with a certain circuit structure is loaded in the metal waveguide to achieve its purpose of filtering characteristics. However, this structure cannot introduce transmission zeros outside the passband, so that the frequency selectivity and out-of-band suppression characteristics are poor (Rao Kejin et al., "Optimized Design of Millimeter Wave Fin Line Filters", Acta Electronics, No. 6, November 1988) .
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种小型化的且具有良好的频率选择性及带外抑制特性波导到微带过渡结构。The technical problem to be solved by the present invention is to provide a miniaturized waveguide-to-microstrip transition structure with good frequency selectivity and out-of-band suppression characteristics.
本发明解决上述技术问题所采用的技术方案是：该具有滤波功能的波导到微带过渡结构包括金属波导和插入到波导内部的介质基片。其中波导结构包括一端为短路结构矩形金属波导、约束腔和固定腔，所述一端为短路结构矩形金属波导、约束腔及固定腔均为中间为一定介质填充的导波结构，所述的固定腔和约束腔均在一端为短路结构矩形金属波导的宽边某一位置处靠近短路端一侧的位置处与其相连；介质基片包括从上到下依次层叠设置的上金属层、复合介质材料、下金属层，所述上金属层上印制有电路结构，所述电路结构包括探针、阻抗变换器(可省略)和微带线。所述的探针、阻抗变换器相连和微带线依次相连接。所述下金属层上也印制有电路结构，所述电路结构包括周期性加载的金属片；贯穿三层的用于抑制能量泄漏的金属化通孔。The technical scheme adopted by the present invention to solve the above-mentioned technical problems is: the waveguide-to-microstrip transition structure with filter function includes a metal waveguide and a dielectric substrate inserted into the waveguide. Wherein the waveguide structure comprises a rectangular metal waveguide with a short-circuit structure at one end, a confined cavity and a fixed cavity, the rectangular metal waveguide with a short-circuit structure at one end, the confined cavity and the fixed cavity are all waveguide structures filled with a certain medium in the middle, and the fixed cavity and the confinement cavity are connected at a position close to the side of the short-circuit end at a certain position on the wide side of a rectangular metal waveguide with a short-circuit structure at one end; the dielectric substrate includes an upper metal layer, a composite dielectric material, and a stacked layer from top to bottom. The lower metal layer is printed with a circuit structure on the upper metal layer, and the circuit structure includes a probe, an impedance transformer (can be omitted) and a microstrip line. The probe, the impedance transformer and the microstrip line are connected in sequence. A circuit structure is also printed on the lower metal layer, and the circuit structure includes periodically loaded metal sheets; metallized through holes for suppressing energy leakage through the three layers.
所述的一端为短路结构矩形金属波导、约束腔和固定腔与介质基片共同组成具有滤波功能的波导到微带过渡，介质基片的上层电路形成波导到微带过渡，探针伸入波导中形成一个电探针，然后再经过一段高阻抗线使阻抗匹配到微带线的特征阻抗，通过探针的耦合作用把波导中的电磁场耦合到微带线中去。介质基片穿过矩形波导，固定在固定腔上，为基片提供了定位保证，同时增加了探针的耦合量。在介质基片的下金属层上印制有周期性的电路结构。One end is a rectangular metal waveguide with a short-circuit structure, the confined cavity, the fixed cavity and the dielectric substrate together form a waveguide to microstrip transition with a filtering function. The upper circuit of the dielectric substrate forms a waveguide to microstrip transition, and the probe extends into the waveguide An electric probe is formed in the middle, and then the impedance is matched to the characteristic impedance of the microstrip line through a high-impedance line, and the electromagnetic field in the waveguide is coupled to the microstrip line through the coupling effect of the probe. The dielectric substrate passes through the rectangular waveguide and is fixed on the fixed cavity, which ensures the positioning of the substrate and increases the coupling amount of the probe. A periodic circuit structure is printed on the lower metal layer of the dielectric substrate.
进一步的是，所述介质基片下金属层周期性电路任意两个彼此相邻的电路结构之间形成一个谐振腔。Further, a resonant cavity is formed between any two adjacent circuit structures of the metal layer periodic circuit under the dielectric substrate.
进一步的是，所述介质基片上金属电路中的探针的相对位置位于下金属层周期性电路的任意两个电路结构的某一位置处。Further, the relative position of the probes in the metal circuit on the dielectric substrate is at a certain position of any two circuit structures of the periodic circuit of the lower metal layer.
进一步的是，介质基片固定在一端为短路结构矩形金属波导宽边的某一位置处，微带线固定在约束腔底部的金属上。Further, the dielectric substrate is fixed at a certain position where one end is a broad side of a rectangular metal waveguide with a short-circuit structure, and the microstrip line is fixed on the metal at the bottom of the confinement cavity.
本发明的有益效果：本发明是在传统波导到微带过渡结构的基础上，在不影响波导到微带过渡电磁能量传输特性的前提下，通过周期性结构加载使其具有了滤波特性。但是这一发明所表现出的性能并不是两种结构所具有功能的简单叠加，而是在具有两者性能优势的基础上，根据两者的相互电磁作用而产生了更加优越的性能。使传统的波导到微带过渡结构具有滤波特性，提高了该结构的性能；缩小了结构的体积，提高了系统的集成性；在阻带内引入了多个传输零点，提高了器件的选择性及带外抑制特性。Beneficial effects of the present invention: On the basis of the traditional waveguide-to-microstrip transition structure, the present invention has filtering characteristics through periodic structural loading without affecting the electromagnetic energy transmission characteristics of the waveguide-to-microstrip transition. However, the performance shown by this invention is not a simple superposition of the functions of the two structures, but on the basis of the performance advantages of the two structures, a more superior performance is produced according to the mutual electromagnetic interaction between the two structures. Make the traditional waveguide to microstrip transition structure have filtering characteristics, improve the performance of the structure; reduce the volume of the structure, improve the integration of the system; introduce multiple transmission zeros in the stop band, improve the selectivity of the device and out-of-band suppression characteristics.
附图说明Description of drawings
图1是传统的波导到微带过渡结构及其传输特性；Figure 1 is a traditional waveguide to microstrip transition structure and its transmission characteristics;
图2是传统的鳍线滤波器结构及其传输特性；Fig. 2 is a traditional fin line filter structure and its transmission characteristics;
图3是本发明实施例一所述的具有滤波功能的波导到微带过渡整体结构图；FIG. 3 is an overall structure diagram of the waveguide-to-microstrip transition with filtering function according to Embodiment 1 of the present invention;
图4是本发明实施例一所述的插入到波导内部的介质基片的横截面示意图；4 is a schematic cross-sectional view of a dielectric substrate inserted into a waveguide according to Embodiment 1 of the present invention;
图5是本发明实施例一所述的介质基片的俯视图；5 is a top view of the dielectric substrate according to Embodiment 1 of the present invention;
图6是本发明实施例一所述的介质基片的仰视图；6 is a bottom view of the dielectric substrate according to Embodiment 1 of the present invention;
图7是本发明实施例一所述的具有滤波功能的波导到微带过渡的传输特性曲线；Fig. 7 is the transmission characteristic curve of the transition from waveguide to microstrip with filtering function according to Embodiment 1 of the present invention;
图8是本发明实施例三所述的介质基片的俯视图；Fig. 8 is a top view of the dielectric substrate described in Embodiment 3 of the present invention;
图9是本发明实施例六所述的介质基片的俯视图；9 is a top view of the dielectric substrate described in Embodiment 6 of the present invention;
图中标记说明：波导1、一端为短路结构的矩形波导101、约束腔102、固定腔103、波导短路面104、介质基片2、介质基片上层金属201、探针2011、阻抗变换器2012、微带线2013、复合材料介质202、介质基片下层金属203、周期性电路结构2031、2032、2033、2034、贯穿三层的用于抑制能量泄漏的金属化通孔204。Explanation of marks in the figure: waveguide 1, rectangular waveguide 101 with a short-circuit structure at one end, confined cavity 102, fixed cavity 103, waveguide short-circuit surface 104, dielectric substrate 2, upper metal layer 201 of the dielectric substrate, probe 2011, impedance transformer 2012 , microstrip line 2013, composite material medium 202, dielectric substrate underlying metal 203, periodic circuit structures 2031, 2032, 2033, 2034, metallized through holes 204 for suppressing energy leakage through the three layers.
具体实施方式detailed description
下面结合附图对本发明的具体实施方式作进一步的说明。The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
本发明的具有滤波功能的波导到微带过渡，包括波导、约束腔插入到波导内部的介质基片，介质基片上印制有电路。下面结合几个实施例具体说明。The transition from waveguide to microstrip with filtering function of the present invention includes a waveguide and a confinement cavity inserted into a dielectric substrate inside the waveguide, and circuits are printed on the dielectric substrate. The following is a specific description in conjunction with several embodiments.
实施例一：Embodiment one:
如图3所示，该具有滤波功能的波导到微带过渡，包括从内到外依次为波导1、介质基片2，所述波导1包括从前到后依次固定腔103、一端为短路结构的矩形波导101和约束腔102，并依次相连，所述固定腔103在靠近波导短路面104的一侧与一端为短路结构的矩形波导101宽边的某一位置处与其相连，约束腔102在靠近波导段路面104的一侧与一端为短路结构的矩形波导101宽边的某一位置处与其相连。所述一端为短路结构的矩形波导101可以采用多种规格的矩形波导或其他类型的波导实现，例如对于W波段的具有滤波功能的波导到微带过渡来讲，所述一端为短路结构的矩形波导101采用WR-10标准波导。As shown in Figure 3, the transition from waveguide with filtering function to microstrip includes waveguide 1 and dielectric substrate 2 from the inside to the outside, and the waveguide 1 includes a fixed cavity 103 from front to back and a short-circuit structure at one end. The rectangular waveguide 101 and the confinement cavity 102 are connected in sequence. The fixed cavity 103 is connected to the side near the short-circuit surface 104 of the waveguide at a certain position on the wide side of the rectangular waveguide 101 with a short-circuit structure at one end. One side of the road surface 104 of the waveguide section is connected to a certain position on the wide side of the rectangular waveguide 101 with a short-circuit structure at one end. The rectangular waveguide 101 with a short-circuit structure at one end can be implemented with rectangular waveguides of various specifications or other types of waveguides. The waveguide 101 adopts WR-10 standard waveguide.
如图4所示，所述的介质基片2，包括从上到下依次层叠设置的上金属层201、复合材料介质202、下金属层203，所述上金属层上印制有电路结构，如图5所示，所述电路结构包括探针2011、阻抗变换器2012、微带线2013，所述探针2011与阻抗变换器2012一端相连，阻抗变换器的另一端与微带线2013相连；所述下金属层上印制有电路结构，如图6所示，所述电路结构为周期性电路结构2031、2032、2033、2034，每个电路单元之间依次相邻。所述介质基片2可以采用多种规格的介质基板实现，也可以根据工作频段的不同而有所差异。As shown in FIG. 4, the dielectric substrate 2 includes an upper metal layer 201, a composite material medium 202, and a lower metal layer 203 stacked sequentially from top to bottom, and a circuit structure is printed on the upper metal layer. As shown in Figure 5, the circuit structure includes a probe 2011, an impedance converter 2012, and a microstrip line 2013, the probe 2011 is connected to one end of the impedance converter 2012, and the other end of the impedance converter is connected to the microstrip line 2013 ; A circuit structure is printed on the lower metal layer, as shown in FIG. 6 , the circuit structure is a periodic circuit structure 2031, 2032, 2033, 2034, and each circuit unit is adjacent to each other in sequence. The dielectric substrate 2 can be realized by using a variety of dielectric substrates, and can also be different according to different working frequency bands.
在图3中，介质基片位于一端为短路结构的矩形波导101的宽边的某一位置处，伸入约束腔102和固定腔103部分的介质基片2固定在约束腔102和固定腔103的底部。In Fig. 3, the dielectric substrate is located at a certain position on the wide side of a rectangular waveguide 101 with a short-circuit structure at one end, and the dielectric substrate 2 extending into the confinement cavity 102 and the fixed cavity 103 is fixed in the confinement cavity 102 and the fixed cavity 103 bottom of.
所述的波导1、介质基片2的上金属层201和复合材料介质202构成波导到微带过渡结构。当探针2011位于波导E面的电场场强最强处时，可以在探针2011上激励起较强的电流，通过阻抗匹配器2012可以把探针2011的阻抗匹配到微带线上，在较宽的频带内把电磁能量较低损耗的传输至微带线上。The waveguide 1, the upper metal layer 201 of the dielectric substrate 2 and the composite material medium 202 constitute a waveguide-to-microstrip transition structure. When the probe 2011 is located at the strongest electric field on the E surface of the waveguide, a stronger current can be excited on the probe 2011, and the impedance of the probe 2011 can be matched to the microstrip line through the impedance matching device 2012. In a wider frequency band, the electromagnetic energy is transmitted to the microstrip line with low loss.
所述的波导1、介质基片2中处在波导1外部的上层金属201、下层金属203以及与周期性加载的电路结构2031、2032、2033、2034、复合材料介质202和贯穿三层的用于抑制能量泄漏的金属化通孔204共同决定了该结构的频率选择性能。下金属层203上彼此相邻的两个周期性加载的电路结构2031、2032、2033、2034之间构成一个具有电磁谐振特性的谐振腔，通过调节彼此相邻的两个周期性加载的电路结构2031、2032、2033、2034的宽窄和它们之间的距离可以改变其所形成谐振腔的谐振频率，通过调节各个谐振腔之间的谐振频率及耦合强度可以在一定的带宽范围内实现电磁能量的低损耗传输，而在通带范围外有较强的抑制能力，从而实现频率选择的功能。如图7所示为W波段具有滤波功能的过渡频率响应曲线，其中心频率为97GHz，3dB带宽为4.65GHz，可以看出具有很好的频率选择特性。此结构中周期性加载的电路结构中间的2032和2033比较窄，外面的2031和2034比较宽。作为参考实例之一，当介质基片厚度为0.127mm的RogersRT/5880时，其具体的周期性加载的电路结构宽度参数为W2031＝W3034＝0.42mm，W2032＝W3033＝0.14mm。The waveguide 1, the upper layer metal 201, the lower layer metal 203 outside the waveguide 1 in the dielectric substrate 2, and the circuit structures 2031, 2032, 2033, 2034 that are periodically loaded, the composite material medium 202, and the use that penetrates the three layers The metallized vias 204 for suppressing energy leakage jointly determine the frequency selective performance of the structure. Two adjacent periodically loaded circuit structures 2031, 2032, 2033, and 2034 on the lower metal layer 203 form a resonant cavity with electromagnetic resonance characteristics. By adjusting the two adjacent periodically loaded circuit structures The width of 2031, 2032, 2033, 2034 and the distance between them can change the resonant frequency of the resonant cavity formed by them. By adjusting the resonant frequency and coupling strength between each resonant cavity, the electromagnetic energy can be realized within a certain bandwidth. Low-loss transmission, and strong suppression ability outside the passband range, so as to realize the function of frequency selection. As shown in Figure 7, the transition frequency response curve of W-band with filter function, its center frequency is 97GHz, 3dB bandwidth is 4.65GHz, it can be seen that it has very good frequency selection characteristics. In this structure, 2032 and 2033 in the middle of the periodically loaded circuit structure are relatively narrow, and 2031 and 2034 outside are relatively wide. As one of the reference examples, when the thickness of the dielectric substrate is 0.127mm RogersRT/ 5880, its specific periodically loaded circuit structure width parameters are W2031 =W3034 =0.42mm, W2032 =W3033 =0.14mm.
所述的波导1、介质基片2的上金属层201、复合材料介质202和下金属层203共同作用时，可以同时实现电磁能量较低损耗传输和滤波功能，在此基础上，由于两种电路结构之间的相互电磁作用，在滤波通带的上阻带和下阻带均引入传输零点，提高了频率选择性、阻带的宽度及带外抑制能力。When the waveguide 1, the upper metal layer 201 of the dielectric substrate 2, the composite material medium 202 and the lower metal layer 203 work together, the transmission and filtering functions of electromagnetic energy with low loss can be realized simultaneously. On this basis, due to the two The mutual electromagnetic interaction between the circuit structures introduces transmission zeros in the upper stop band and lower stop band of the filter passband, which improves the frequency selectivity, the width of the stop band and the out-of-band suppression ability.
所述的介质基片上金属层201的探针2011可以位于任意两个相邻的下金属层203上的周期性加载电路结构2031、2032、2033、2034间的某一位置处，即：探针2011可以位于任意两个相邻周期性加载电路结2031、2032、2033、2034形成的谐振腔的某一位置处，作为优选的是，所述探针2011位于周期性加载电路结2032和2033的某一位置处。The probe 2011 of the metal layer 201 on the dielectric substrate can be located at a certain position between the periodic loading circuit structures 2031, 2032, 2033, 2034 on any two adjacent lower metal layers 203, namely: the probe 2011 can be located at a certain position of the resonant cavity formed by any two adjacent periodic loading circuit junctions 2031, 2032, 2033, 2034, as preferably, the probe 2011 is located at the junction of the periodic loading circuit junctions 2032 and 2033 at a certain location.
具体测试过程如下：将介质基片固定于图3所示的波导101和约束腔102中，利用两个相同具有滤波功能的波导到微带过渡，采用“背靠背”的形式进行连接，并利用测量仪器进行测试，进而得到其传输特性。以W波段具有滤波功能的波导到微带过渡为例，其传输特性如图7所示，在传输通带内可以实现较低损耗的能量传输，而且频率选择性好、带外抑制能力强、阻带宽，同时，与如图1所示的传统的波导带微带过渡相比，本发明提高了通带频率的选择性，与如图2所示的传统的鳍线带通滤波器传输特性相比，在滤波通带的上下阻带内引入了多个传输零点，提高了滤波通带的矩形系数、阻带宽度及阻带抑制度。The specific test process is as follows: the dielectric substrate is fixed in the waveguide 101 and the confinement cavity 102 shown in Figure 3, and two waveguides with the same filtering function are used to transition to the microstrip, connected in a "back-to-back" form, and measured by The instrument is tested to obtain its transmission characteristics. Taking the transition from waveguide to microstrip with filtering function in the W band as an example, its transmission characteristics are shown in Figure 7. It can achieve energy transmission with low loss in the transmission passband, and it has good frequency selectivity, strong out-of-band suppression ability, Stopband bandwidth, at the same time, compared with the traditional waveguide strip microstrip transition as shown in Figure 1, the present invention has improved the selectivity of passband frequency, and the traditional fin line bandpass filter transmission characteristic as shown in Figure 2 In contrast, multiple transmission zeros are introduced in the upper and lower stop bands of the filter pass band, which improves the square coefficient, stop band width and stop band suppression of the filter pass band.
实施例二：Embodiment two:
本实施例中将介质基片2上金属层201的探针2011放置在周期性加载结构电路2031和2032、2033和2034之间任一个组合的某一位置处，其他部分与实施例一完全相同。In this embodiment, the probe 2011 of the metal layer 201 on the dielectric substrate 2 is placed at a certain position in any combination between the periodic loading structure circuits 2031 and 2032, 2033 and 2034, and the other parts are completely the same as in the first embodiment .
实施例三：Embodiment three:
本实施例中将介质基片2下金属层203的周期性加载电路2031、2032、2033和2034放置在上金属层201，其他部分与实施一完全相同。其他部分与实施例一完全相同，其具体电路结构示意图如图8所示。In this embodiment, the periodic loading circuits 2031 , 2032 , 2033 and 2034 of the lower metal layer 203 of the dielectric substrate 2 are placed on the upper metal layer 201 , and the other parts are completely the same as in the first embodiment. Other parts are exactly the same as those in Embodiment 1, and its specific circuit structure schematic diagram is shown in FIG. 8 .
实施例四：Embodiment four:
本实施例中将介质基片2上层金属201和下金属层203两层金属上对称地放置周期性加载电路2031、2032、2033和2034，周期性加载电路的个数可设置为其他任意个数，如：一个、两个、三个、五个等等，其他部分与实施例一完全相同。In this embodiment, the periodic loading circuits 2031, 2032, 2033 and 2034 are placed symmetrically on the two metal layers of the upper metal layer 201 and the lower metal layer 203 of the dielectric substrate 2, and the number of the periodic loading circuits can be set to other arbitrary numbers. , such as: one, two, three, five, etc., and the other parts are exactly the same as in Embodiment 1.
实施例五：Embodiment five:
本实施例中将介质基片2下金属层203的周期性加载电路的个数设置为其他任意个数，如：一个、两个、三个、五个等等，其他部分与实施例一完全相同。In this embodiment, the number of periodic loading circuits of the metal layer 203 under the dielectric substrate 2 is set to other arbitrary numbers, such as: one, two, three, five, etc., and the other parts are completely the same as in the first embodiment same.
实施例六：Embodiment six:
本实施例中将介质基片下金属层的电路形式从周期性加载结构换为其他任何有滤波功能的电路结构，其他部分与实施例一完全相同。In this embodiment, the circuit form of the metal layer under the dielectric substrate is changed from a periodic loading structure to any other circuit structure with a filtering function, and other parts are completely the same as in the first embodiment.
实施例七：Embodiment seven:
本实施例中将介质基片约束腔部分的电路形式从微带线结构换为共面波导结构，其他部分与实施例一完全相同，其具体电路结构示意图如图9所示。约束腔102内介质基片2上金属层电路为共面波导结构。In this embodiment, the circuit form of the dielectric substrate confinement cavity is changed from a microstrip line structure to a coplanar waveguide structure, and the other parts are completely the same as in the first embodiment. The specific circuit structure diagram is shown in FIG. 9 . The metal layer circuit on the dielectric substrate 2 in the confinement cavity 102 is a coplanar waveguide structure.
实施例八：Embodiment eight:
本实施例中将介质基片2上金属层电路201的探针2011改为同轴探针，然后再与约束腔内的微带线2013(或实施实例六中的共面波导)连接，其他部分与实施例一完全相同，仍可实现本发明的功能。In this embodiment, the probe 2011 of the metal layer circuit 201 on the dielectric substrate 2 is changed to a coaxial probe, and then connected to the microstrip line 2013 (or the coplanar waveguide in the implementation example 6) in the confined cavity, and other Parts are completely the same as in Embodiment 1, and the functions of the present invention can still be realized.
实施例九：Embodiment nine:
本实施例中将介质基片2上金属层电路201的探针2011改为接地环形探针，再与约束腔内的微带线2013(或实施实例六中的共面波导)连接，然后从一端为短路结构的矩形波导101窄边的某一位置插入，同时，约束腔102和固定腔103也位于一端为短路结构的矩形波导101窄边的与介质基片相对应的位置处，利用磁耦合的方式实现电磁能量从波导内转换到微带线上，其他部分与实施例一完全相同，仍可实现本发明的功能。In this embodiment, the probe 2011 of the metal layer circuit 201 on the dielectric substrate 2 is changed to a grounded ring probe, and then connected to the microstrip line 2013 (or the coplanar waveguide in the sixth implementation example) in the confined cavity, and then from One end of the rectangular waveguide 101 with a short-circuit structure is inserted at a certain position on the narrow side. At the same time, the confinement cavity 102 and the fixed cavity 103 are also located at the position corresponding to the dielectric substrate on the narrow side of the rectangular waveguide 101 with a short-circuit structure at one end. The coupling method realizes the conversion of electromagnetic energy from the waveguide to the microstrip line, and the other parts are completely the same as in the first embodiment, and the functions of the present invention can still be realized.
实施例十：Embodiment ten:
本实施例中在介质基片2上金属层电路201的微带线2013处加载具有滤波功能的结构，如交指结构、枝节加载谐振结构、CMRC结构及DGS结构等(此时介质基片2下金属层203周期性加载电路2031、2032、2033、2034可以省略)，其他部分与实施例一完全相同，仍可实现本发明的功能。In this embodiment, a structure with filtering function is loaded on the microstrip line 2013 of the metal layer circuit 201 on the dielectric substrate 2, such as an interdigitated structure, a stub-loaded resonant structure, a CMRC structure, and a DGS structure, etc. (at this time, the dielectric substrate 2 The periodic loading circuits 2031 , 2032 , 2033 , and 2034 of the lower metal layer 203 can be omitted), and the other parts are completely the same as those in Embodiment 1, and the functions of the present invention can still be realized.
实施例十一：Embodiment eleven:
本实施例中在波导1或介质基片2中把具有带通频率选择特性的结构替换为具有高通或者低通频率选择的结构，其他部分与实施例一完全相同，仍可实现本发明的功能。In this embodiment, in the waveguide 1 or the dielectric substrate 2, the structure with band-pass frequency selection characteristics is replaced with a structure with high-pass or low-pass frequency selection, and the other parts are exactly the same as in Embodiment 1, and the functions of the present invention can still be realized. .
从上述十一个实施例可以看出，本发明提供的具有滤波功能的波导到微带过渡与具体的波导波长无关，因而可以应用在不同的频段，同时还具有以下的优点：It can be seen from the above eleven embodiments that the transition from the waveguide to the microstrip with filtering function provided by the present invention has nothing to do with the specific waveguide wavelength, so it can be applied in different frequency bands, and also has the following advantages:
频率选择性好，带外抑制能力强。本发明的具有滤波功能的波导到微带过渡通过结构之间相互的电磁作用可以在滤波通带左右两边的阻带内引入多个传输零点，提高了滤波的矩形系数，即提高了滤波的选择性，同时提高了阻带的抑制水平。Good frequency selectivity and strong out-of-band suppression ability. The electromagnetic interaction between the waveguide and the microstrip transition structure with filtering function of the present invention can introduce a plurality of transmission zero points in the stop bands on the left and right sides of the filter pass band, which improves the filter square coefficient, that is, improves the filter selection performance while increasing the level of inhibition in the stop band.
结构紧凑，体积小。本发明的具有滤波功能的波导到微带过渡具有了传统滤波器和波导到微带过渡共同特性的同时还提高滤波的选择性，使一个器件具有了多个器件的特性，使本发明的具有滤波特性的波导到微带过渡结构非常紧凑、体积小。Compact structure and small volume. The waveguide to microstrip transition with filtering function of the present invention has the common characteristics of the traditional filter and waveguide to microstrip transition while also improving the selectivity of filtering, so that one device has the characteristics of multiple devices, so that the present invention has The waveguide to microstrip transition structure with filtering characteristics is very compact and small in size.
实现方式多样化。本发明利用的是信号从主波导通过不同的耦合方式耦合到微带线上，所以本发明可以利用不同的耦合方式来实现，在电耦合方面可以利用诸如探针耦合、同轴耦合、鳍线耦合等具有电耦合特性的耦合结构实现，在磁耦合方面可以利用环形耦合探针、同轴环形耦合探针等具有磁耦合特性的耦合结构来实现；主波导也可以利用多种形式的波导结构来实现，如矩形波导、圆波导、同轴线、脊波导等规则金属波导以及其他各种波导结构的变形结构；滤波特性也可以在波导或介质基片上加载多种具有滤波特性的结构实现，如：周期性结构加载，波导中加载谐振腔、交指结构、枝节加载谐振结构、EBG结构、DGS结构及CMRC结构等具有频率选择性的结构。The implementation methods are diversified. What the present invention utilizes is that the signal is coupled from the main waveguide to the microstrip line through different coupling methods, so the present invention can be realized by using different coupling methods, such as probe coupling, coaxial coupling, fin line, etc. Coupling and other coupling structures with electrical coupling characteristics can be realized in terms of magnetic coupling by using coupling structures with magnetic coupling characteristics such as ring coupling probes and coaxial ring coupling probes; the main waveguide can also use various forms of waveguide structures To achieve, such as rectangular waveguide, circular waveguide, coaxial line, ridge waveguide and other regular metal waveguides and other deformation structures of various waveguide structures; the filtering characteristics can also be realized by loading a variety of structures with filtering characteristics on the waveguide or dielectric substrate, Such as: periodic structure loading, waveguide loading resonant cavity, interdigitated structure, branch loaded resonant structure, EBG structure, DGS structure and CMRC structure and other structures with frequency selectivity.
本领域的普通技术人员将会意识到，这里所述的实施例是为了帮助读者理解本发明的原理，应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合，这些变形和组合仍然在本发明的保护范围内。Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.
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| CN201610118056.6ACN105576332B (en) | 2016-03-02 | 2016-03-02 | Waveguide with filtering characteristic is to microstrip transition structure |
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| CN201610118056.6ACN105576332B (en) | 2016-03-02 | 2016-03-02 | Waveguide with filtering characteristic is to microstrip transition structure |
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| CN201610118056.6AActiveCN105576332B (en) | 2016-03-02 | 2016-03-02 | Waveguide with filtering characteristic is to microstrip transition structure |
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