技术领域technical field
本发明涉及开关电路技术中的功率变换器,特别涉及一种功率变换器的功率开关管隔离栅驱动电路。The invention relates to a power converter in the switch circuit technology, in particular to a power switch tube isolation barrier driving circuit of the power converter.
背景技术Background technique
现代电子设备对其供电装置(功率变换器)提出了轻便和高效率等方面的要求,使得功率变换器的功率密度和开关频率不断提高,功率容量更大的桥式拓扑、性能更优的新型器件如绝缘栅场效应管(IGBT)等被广泛应用。由于材料限制,传统硅基功率器件在许多方面已逼近甚至达到了其材料的本征极限,宽禁带器件如碳化硅(SiC)、氮化镓(GaN)等应用而生。这些都给功率变换器的驱动电路提出了更快、更高效、更可靠等更高的要求。在桥式拓扑中,当上管关段时产生极大的dv/dt,这将可能引起下管的误开启,造成上下管发生短路直通,因此有必要为在功率管关断期间为其提供反向的栅极电压;而IGBT关断期间,栅极电路中会产生高频振荡信号,这些信号轻则会使IGBT处于微通的状态,增加功率管的反向栅压功耗,重则将使上下管短路直通,因此必须为IGBT提供反向的栅极电压,加速IGBT的关断过程;而宽禁带器件固有常态下的开通特性,决定其栅极需一定的负压,使开关管保持关断。Modern electronic equipment puts forward requirements on lightness and high efficiency for its power supply device (power converter), which makes the power density and switching frequency of the power converter continue to increase, the bridge topology with larger power capacity, and the new type of power converter with better performance Devices such as insulated gate field effect transistors (IGBTs) are widely used. Due to material limitations, traditional silicon-based power devices have approached or even reached the intrinsic limit of their materials in many aspects, and wide bandgap devices such as silicon carbide (SiC) and gallium nitride (GaN) have emerged. All of these put forward higher requirements such as faster, more efficient, and more reliable for the driving circuit of the power converter. In the bridge topology, when the upper tube is turned off, a huge dv/dt will be generated, which may cause the wrong turn-on of the lower tube, resulting in a short circuit and a direct connection between the upper and lower tubes. Therefore, it is necessary to provide Reverse gate voltage; while the IGBT is turned off, high-frequency oscillating signals will be generated in the gate circuit, and these signals will make the IGBT in a micro-pass state, increasing the reverse gate voltage power consumption of the power tube, and heavy The upper and lower tubes will be short-circuited through, so it is necessary to provide a reverse gate voltage for the IGBT to accelerate the turn-off process of the IGBT; and the inherent normal turn-on characteristics of the wide bandgap device determine that the gate needs a certain negative voltage to make the switch The tube remains off.
图1是现有的一种隔离驱动电路,包括脉宽调制驱动器,原边隔直电容Cb,隔离变压器T,二极管D,副边隔直电容C1,所有元器件上的电压方向如图1所示。图1所示驱动电路稳态工作时各点的电压波形参见图2,其中Vi是脉宽调制驱动器的输出电压波形,假设稳态时占空比为d,幅值为M;V1和V2分别是电容Cb和电容C1两端的电压波形,幅值均为dM;Vp和Vs分别是变压器T原边和副边电压波形,Vg是隔离驱动电路输出端的电压波形,并假设隔离变压器T的原边绕组与副边绕组的匝比为1:1。这种隔离驱动电路的优点是输出电平与占空比d无关,且占空比可大于0.5。但这种磁隔离驱动电路也具有很明显的缺点,隔离驱动变压器T由于绕制工艺的影响会产生一定的漏感,该漏感会与隔直电容在开通和关断瞬间产生谐振,最终导致驱动电路的输出电平上叠加一定的电压尖峰,电压尖峰可能引起功率开关管的误动作,使控制失效。不仅如此,漏感引起的谐振电压尖峰过大还会导致功率管的栅极被击穿,对于更容易被击穿的宽禁带器件来说,尤其需要在器件截止时栅极存在一个负压。Figure 1 is an existing isolated driving circuit, including a pulse width modulation driver, a DC blocking capacitor Cb on the primary side, an isolation transformer T, a diode D, and a DC blocking capacitor C1 on the secondary side. The voltage directions on all components are shown in the figure 1. Refer to Figure 2 for the voltage waveforms at each point of the drive circuit shown in Figure 1 when it works in a steady state, where Vi is the output voltage waveform of the PWM driver, assuming that the duty cycle in the steady state is d and the amplitude is M; V1 and V2 are the voltage waveforms at both ends of the capacitor Cb and capacitor C1 , and the amplitudes are both dM; Vp and Vs are the voltage waveforms of the primary side and secondary side of the transformer T respectively, and Vg is the voltage waveform at the output end of the isolation drive circuit, and it is assumed that the isolation transformer The turn ratio of the primary winding of T to the secondary winding is 1:1. The advantage of this isolated drive circuit is that the output level has nothing to do with the duty cycle d, and the duty cycle can be greater than 0.5. However, this magnetic isolation drive circuit also has obvious disadvantages. Due to the influence of the winding process, the isolation drive transformer T will produce a certain leakage inductance, and the leakage inductance will resonate with the DC blocking capacitor at the moment of turning on and off, eventually causing A certain voltage peak is superimposed on the output level of the driving circuit, and the voltage peak may cause a malfunction of the power switch tube and make the control invalid. Not only that, the excessive resonance voltage spike caused by the leakage inductance will also cause the gate of the power tube to be broken down. For the wide bandgap device that is easier to be broken down, it is especially necessary to have a negative voltage on the gate when the device is turned off. .
发明内容Contents of the invention
本发明在于克服现有技术之不足,提供一种功率变换器的功率开关管隔离栅驱动电路,在被驱动的功率开关管关断时能够产生一个负压,防止被驱动功率开关管的误开通,从而提高系统的可靠性。The present invention overcomes the deficiencies of the prior art, and provides a power switch tube isolation barrier drive circuit for a power converter, which can generate a negative pressure when the driven power switch tube is turned off, and prevent the driven power switch tube from being turned on by mistake , thereby improving the reliability of the system.
为实现上述发明目的,本发明采用的技术方案如下:一种功率变换器的功率开关管隔离栅驱动电路,包括产生控制信号的脉宽调制驱动器、原边隔直电容Cb、隔离变压器T、副边隔直电容C1、二极管D以及被驱动的开关管Q,脉宽调制驱动器的输出正端通过隔直电容Cb连接隔离变压器T原边侧的同名端,隔离变压器T原边侧的非同名端连接脉宽调制驱动器的输出负端,隔离变压器T副边侧的同名端连接隔直电容C1的一端,隔直电容C1的另一端连接二极管D的阴极和被驱动开关管Q的栅极,被驱动开关管Q的源极与二极管D的阳极以及隔离变压器T副边侧的非同名端连接在一起,其特征在于:In order to realize the purpose of the above invention, the technical scheme adopted by the present invention is as follows: a power switch tube isolation barrier driving circuit of a power converter, including a pulse width modulation driver for generating a control signal, a primary DC blocking capacitor Cb , an isolation transformer T, Secondary side DC blocking capacitor C1 , diode D and driven switch tube Q, the output positive terminal of the pulse width modulation driver is connected to the terminal with the same name on the primary side of the isolation transformer T through the DC blocking capacitor Cb , and the terminal on the primary side of the isolation transformer T The non-identical terminal is connected to the output negative terminal of the pulse width modulation driver, the identical terminal on the secondary side of the isolation transformer T is connected to one end of the DC blocking capacitorC1 , and the other end of the DC blocking capacitorC1 is connected to the cathode of the diode D and the driven switching tube Q The gate of the driven switching tube Q is connected to the anode of the diode D and the non-identical end of the secondary side of the isolation transformer T, which is characterized in that:
在隔直电容C1的两端增设并联电阻R1,并增设电容C2与电阻R2并联,电容C2与电阻R2并联后的一端连接二极管D的阴极,电容C2与电阻R2并联后的另一端与上述隔直电容C1的另一端以及被驱动开关管Q的栅极连接在一起;在被驱动的开关管Q关断时,二极管D、电容C2和电阻R2构成负压产生电路并通过电阻R1与电阻R2的分压调整负压的大小,以避免被驱动的开关管Q的误导通。Add a parallel resistor R1 at both ends of the DC blocking capacitor C1 , and add a capacitor C2 in parallel with the resistor R2. One end of the parallel connection between the capacitor C2 and the resistor R2 is connected to the cathode of the diode D, and the capacitor C2 and the resistor R2 The other end of the parallel connection is connected with the other end of the DC blocking capacitorC1 and the gate of the driven switching tube Q; when the driven switching tube Q is turned off, the diode D, the capacitorC2 and the resistor R2 form aThe negative voltage generation circuit adjusts the size of the negative voltage through the voltage divisionof the resistor R1 and the resistor R2, so as to avoid false conduction of the driven switch tube Q.
所述电容C1以及电容C2的数值远大于被驱动开关管Q的栅极电容,需为被驱动开关管Q栅极电容的20倍以上,电阻R1以及电阻R2都采用数值为数百欧姆的大电阻。。The values of the capacitorC1 and the capacitor C2 are much largerthan the gate capacitance of the driven switch tube Q, and need to be more than20 times the gate capacitance of the driven switch tube Q. A large resistor of 100 ohms. .
本发明的优点及显著效果:Advantage of the present invention and remarkable effect:
1、在被驱动的MOS管关断时,传统驱动方案往往将MOS管栅极电荷通过大地完全泄放掉,或者由栅源泄放电阻和MOS管的栅源寄生电阻消耗掉,这样不仅增加了驱动电路的损耗,而且也降低了功率MOS管的可靠性。本发明在现有技术的基础上,通过在二极管D的阴极串联增加了一个电容C2与电阻R2的并联结构,构成了稳定的负压源,同时实现隔离和负压的栅驱动,防止了被驱动器件的误开通,从而提高系统的可靠性,同时满足宽禁带器件的驱动要求。1. When the driven MOS tube is turned off, the traditional driving scheme often discharges the gate charge of the MOS tube completely through the ground, or is consumed by the gate-source discharge resistance and the gate-source parasitic resistance of the MOS tube, which not only increases The loss of the driving circuit is reduced, and the reliability of the power MOS tube is also reduced. On the basis of the prior art, the present invention adds a parallel structure of a capacitor C2 and a resistor R2 in series at the cathode of the diode D to form a stable negative voltage source, and realize isolation and negative voltage gate drive at the same time, preventing The false turn-on of the driven device is prevented, thereby improving the reliability of the system, and at the same time meeting the driving requirements of the wide bandgap device.
2、本发明结构简单,不需要引入新的电源或是驱动控制信号,即可实现产生固定负压的隔离栅驱动。2. The structure of the present invention is simple, and the isolated barrier drive that generates a fixed negative pressure can be realized without introducing a new power supply or a drive control signal.
3、本发明可以适应各种占空比固定的驱动电路。3. The present invention can adapt to various driving circuits with fixed duty ratios.
4、本发明在整个驱动过程中,电容C1和电容C2上的电压几乎不发生变化,驱动开关管Q开启和关断的电流直接由电容C1和C2提供,不需要经过驱动电阻,减小了开关管的驱动损耗。4. During the entire driving process of the present invention, the voltageon the capacitorC1 and the capacitor C2 hardly changes, and the current for driving the switching tube Q to turn on and off is directly provided by the capacitorsC1 andC2 without passing through the driving resistor , reducing the driving loss of the switching tube.
附图说明Description of drawings
图1是现有的一种隔离驱动电路图;Fig. 1 is an existing isolated driving circuit diagram;
图2是现有的一种隔离驱动电路的主要工作波形;Fig. 2 is the main working waveform of an existing isolated drive circuit;
图3是本发明一种产生固定负压的隔离驱动电路图;Fig. 3 is a diagram of an isolated drive circuit for generating a fixed negative pressure according to the present invention;
图4是本发明提出的隔离驱动电路的主要工作波形。Fig. 4 is the main working waveform of the isolated driving circuit proposed by the present invention.
具体实施方式detailed description
下面结合附图对本发明的技术进行详细说明。The technology of the present invention will be described in detail below in conjunction with the accompanying drawings.
参看图3,本发明包括与现有技术图1相同的产生控制信号的脉宽调制驱动器、隔离驱动变压器T、原边隔直电容Cb、副边隔直电容C1、二极管D以及被驱动的开关管Q,各个元器件上的电压方向如图1、3所示。脉宽调制驱动器的输出正端通过隔直电容Cb连接隔离变压器T原边侧的同名端,隔离变压器T原边侧的非同名端连接脉宽调制驱动器的输出负端,隔离变压器T副边侧的同名端连接隔直电容C1的一端,隔直电容C1的另一端连接二极管D的阴极和被驱动开关管Q的栅极,被驱动开关管Q的源极与二极管D的阳极以及隔离变压器T副边侧的非同名端连接在一起。脉宽调制驱动器用于产生一个初始的驱动信号(其产生的控制信号的占空比固定不变),隔直电容Cb用于滤除这个驱动信号中的直流分量,隔离变压器T用于将变压器原边的信号传递到副边,同时实现隔离,电容C1用于保持电阻R1上的电压在开关过程中稳定。脉宽调制驱动器产生一个占空比为d,幅值为M的方波驱动信号。隔直电容Cb把脉冲调制驱动器所产生的这一驱动信号的直流分量给滤除,并使隔直电容Cb上的电压始终为dM。由于隔离变压器T原副边的匝比为1:1,之后会通过隔离变压器T将占空比同样为d,正向幅值为(1-d)M,负向幅值为dM的方波信号从变压器原边传递到变压器的副边。Referring to Fig. 3, the present invention includes the same pulse width modulation driver, isolation drive transformer T, primary side DC blocking capacitor Cb , secondary side DC blocking capacitor C1 , diode D and driven The switch tube Q, the voltage direction on each component is shown in Figures 1 and 3. The output positive terminal of the PWM driver is connected to the same-named terminal on the primary side of the isolation transformer T through the DC blocking capacitor Cb , and the non-identical terminal on the primary side of the isolation transformer T is connected to the output negative terminal of the PWM driver, and the secondary side of the isolation transformer T The end with the same name on the side is connected to one end of the DC blocking capacitorC1 , and the other end of the DC blocking capacitorC1 is connected to the cathode of the diode D and the gate of the driven switching tube Q, the source of the driven switching tube Q and the anode of the diode D and The non-identical terminals on the secondary side of the isolation transformer T are connected together. The pulse width modulation driver is used to generate an initial drive signal (the duty cycle of the control signal generated by it is fixed), the DC blocking capacitor Cb is used to filter out the DC component in the drive signal, and the isolation transformer T is used to The signal from the primary side of the transformer is transmitted to the secondary side, and isolation is realized at the same time, and the capacitorC1 is used to keep the voltageon the resistor R1 stable during the switching process. A PWM driver generates a square wave drive signal with a duty cycle of d and an amplitude of M. The DC blocking capacitor Cb filters out the DC component of the driving signal generated by the pulse modulation driver, and makes the voltage on the DC blocking capacitor Cb always dM. Since the turn ratio of the primary and secondary sides of the isolation transformer T is 1:1, the isolation transformer T will then pass through the isolation transformer T to convert a square wave with a duty cycle of d, a positive amplitude of (1-d)M, and a negative amplitude of dM The signal is passed from the primary side of the transformer to the secondary side of the transformer.
本发明在图1的基础上,在副边侧隔直电容C1的两端增设并联电阻R1,并增设电容C2与电阻R2并联,电容C2与电阻R2并联后的一端连接二极管D的阴极,电容C2与电阻R2并联后的另一端与上述隔直电容C1的另一端以及被驱动开关管Q的栅极连接在一起。在被驱动的开关管Q关断时,二极管D、电容C2和电阻R2构成负压产生电路并通过电阻R1与电阻R2的分压调整负压的大小,可以避免被驱动的开关管Q的误导通。电容C1以及电容C2远大于被驱动开关管Q的栅极电容(一般为开关管Q的栅极电容的20倍以上)。同时用于分压的电阻R1以及电阻R2都相对较大(一般为数百欧姆),流经这两个电阻的电流较小。因此在工作过程中电容C1以及电容C2两端的电压都几乎不发生变化。On the basis of Fig.1 , the present invention adds a parallel resistor R1 atboth ends of the DC blocking capacitorC1on the secondary side, and adds a capacitorC2 in parallel with the resistor R2, and connects one end of the capacitorC2 in parallel with the resistor R2The cathode of the diode D, the other end of the parallel connection of the capacitorC2 and the resistor R2 are connected together with the other end of the DC blocking capacitorC1 and the gate of the driven switching transistor Q. When the driven switch tube Q is turned off, the diode D, capacitorC2 and resistorR2 form a negative voltage generating circuit and adjust the negative voltage through the voltage divisionof the resistorR1 and resistor R2, which can avoid the driven switch False conduction of tube Q. CapacitorsC1 andC2 are much larger than the gate capacitance of the driven switching transistor Q (generally more than 20 times the gate capacitance of the switching transistor Q). At the same time, the resistors R1 and R2 used for voltage division are relatively large (generally hundredsof ohms), and the current flowing through thesetwo resistors is relatively small. Therefore, the voltages atboth ends of the capacitorC1 and the capacitor C2 hardly change during the working process.
当变压器副边电压VS为负,幅值为dM的时候此时Vg为负,二极管D导通,此时电阻R1和电阻R2串联进行分压,电阻R1上面的电压大小为R1*dM/(R1+R2),电阻R2上面的电压为R2*dM/(R1+R2)。因此此时Vg的电压为负,其幅值为R2*dM/(R1+R2)。当变压器副边电压为正,幅值为(1-d)M的时候,被驱动开关管栅源之间的电压Vg为正,此时二极管D截止,被驱动开关管Q栅源间的电压Vg为隔离变压器变压器T副边的电压加上电容C1上的电压。When the voltage VS on the secondary side of the transformer is negative and the amplitude is dM, Vg is negative at this time, and the diode D is turned on. At this time, the resistor R1 and the resistor R2 are connected in series to divide the voltage, and the voltage on the resistor R1 is R1 *dM/(R1 +R2 ), the voltage on the resistor R2 is R2 *dM/(R1 +R2 ). Therefore, the voltage of Vg is negative at this time, and its amplitude is R2 *dM/(R1 +R2 ). When the voltage on the secondary side of the transformer is positive and the amplitude is (1-d)M, the voltage Vg between the gate and source of the driven switching tube is positive, and at this time the diode D is cut off, and the voltage between the gate and source of the driven switching tube Q is Vg is the voltage on the secondary side of the isolation transformer transformer T plus the voltage on the capacitorC1 .
由于电容C1和电容C2相对开关管的栅源寄生电容较大,电容C1和电容C2上的电压不会由于给开关管的栅源寄生电容充放电而发生明显的变化。同时用于分压的电阻R1和电阻R2也较大,电容C1以及电容C2不会由于电阻R1和电阻R2形成自放电回路而产生明显的电压变化。因此可以认为,在整个开关驱动的过程中,电容C1以及电容C2上的电压均保持不变。因此电容C1上的电压V2始终为R1*dM/(R1+R2),也就是当变压器副边电压为负时电阻R1的分压。Since capacitorC1 and capacitor C2 are largerthan the gate- source parasitic capacitance of the switch tube, the voltage on capacitorC1 and capacitor C2 will not change significantly due to charging and discharging the gate-source parasitic capacitance of the switch tube. At the same time, the resistors R1 and R2 used for voltage division are also relatively large, and the capacitorsC1 andC2will not produce obvious voltage changes due to the self- dischargingloop formed by the resistorsR1 and R2. Therefore, it can be considered that the voltages on the capacitorsC1 andC2 remain unchanged during the whole switch driving process. Therefore, the voltage V2 on the capacitor C1 is always R1 *dM/(R1 +R2 ), that is, the voltage division of the resistor R1 when the secondary voltage of the transformer is negative.
当隔离变压器T副边的电压VS为正,幅值为(1-d)M的时候,Vg两端的电压为正,二极管D截止。此时Vg的电压为隔离变压器T副边的电压加上电容C1两端的电压,其幅值为(1-d)M+R1*dM/(R1+R2)。When the voltage VS on the secondary side of the isolation transformer T is positive and the amplitude is (1-d)M, the voltage at both ends of Vg is positive, and the diode D is cut off. At this time, the voltage of Vg is the voltage of the secondary side of the isolation transformer T plus the voltage of both ends of the capacitor C1 , and its amplitude is (1-d)M+R1 *dM/(R1 +R2 ).
这样就可以提供给被驱动开关管Q一个占空比为d,正向幅值为(1-d)M+R1*dM/(R1+R2),负向幅值为R2*dM/(R1+R2)的方波驱动信号,其相位与脉冲调制驱动器所产生的初始的控制信号相同。In this way, a duty ratio of d can be provided to the driven switching tube Q, the positive amplitude is (1-d)M+R1 *dM/(R1 +R2 ), and the negative amplitude is R2 * The dM/(R1 +R2 ) square wave driving signal has the same phase as the initial control signal generated by the pulse modulation driver.
在给定驱动信号占空比d的条件下,本发明隔离栅驱动电路可以通过调节电阻R1以及电阻R2的大小,来产生一个所需的驱动信号。该驱动信号正压和负压的幅值大小均可调。只要驱动信号的占空比d在工作过程中固定,所产生的驱动信号的正压及负压也可保持稳定。Under the condition of a given driving signal duty cycle d, the isolation barrier driving circuit of the present invention can generate a required driving signal byadjusting the sizeof the resistor R1 and the resistor R2. The amplitudes of positive pressure and negative pressure of the drive signal can be adjusted. As long as the duty ratio d of the driving signal is fixed during operation, the positive and negative pressures of the generated driving signal can also be kept stable.
本发明隔离栅驱动电路各个节点的主要工作波形如图4所示。其中Vi为脉宽调制驱动器输出的方波信号,其周期为T,占空比为d,幅值为M;V1为隔直电容Cb两端的电压为大小,为大小为dM的直流信号;Vp和Vs分别为隔离变压器T原边和副边的电压,它们均为占空比为d的方波信号,正向幅值均为(1-d)M,负向幅值均为dM;V2为电容C1两端电压,为大小为R1*dM/(R1+R2)的直流信号;Vg为被驱动开关管Q的栅源间的电压,为占空比为d的方波信号,其正向幅值为正向幅值为(1-d)M+R1*dM/(R1+R2),负向幅值为R2*dM/(R1+R2)。对比图2中的波形可以发现,最后在Vg两端产生了有正有负的信号,而非图2中非正即零的信号,同时图4中Vg两端信号的正向幅值和负向幅值均可以通过R1和R2来进行调节。The main working waveforms of each node of the isolation gate driving circuit of the present invention are shown in FIG. 4 . Wherein Vi is the square wave signal output by the pulse width modulation driver, its period is T, the duty ratio is d, and the amplitude is M; V1 is the voltage at both endsof the DC blocking capacitor Cb, which is a DC signal with a size of dM; Vp and Vs are the voltages of the primary side and the secondary side of the isolation transformer T respectively, they are all square wave signals with a duty ratio of d, the positive amplitude is (1-d)M, and the negative amplitude is dM; V2 is the voltage at both ends of the capacitor C1, which is a DC signal whose size is R1 *dM/(R1 +R2 ); Vg is the voltage between the gate and source of the driven switching transistor Q, which is a square with a duty ratio of d wave signal, its positive amplitude is (1-d)M+R1 *dM/(R1 +R2 ), and its negative amplitude is R2 *dM/(R1 +R2 ). Comparing the waveforms in Figure 2, it can be found that there are positive and negative signals at both ends of Vg, instead of the non-positive or zero signal in Figure 2. At the same time, the positive amplitude and negative amplitude of the signals at both ends of Vg in Figure 4Theamplitude can be adjusted by R1 and R2.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039064.1ACN105449997A (en) | 2016-01-20 | 2016-01-20 | A power switch tube isolated gate drive circuit for a power converter |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039064.1ACN105449997A (en) | 2016-01-20 | 2016-01-20 | A power switch tube isolated gate drive circuit for a power converter |
| Publication Number | Publication Date |
|---|---|
| CN105449997Atrue CN105449997A (en) | 2016-03-30 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610039064.1APendingCN105449997A (en) | 2016-01-20 | 2016-01-20 | A power switch tube isolated gate drive circuit for a power converter |
| Country | Link |
|---|---|
| CN (1) | CN105449997A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026721A (en)* | 2016-07-19 | 2016-10-12 | 东南大学 | Grid drive circuit of ZCS full bridge converter employing SiC power tubes |
| CN106208711A (en)* | 2016-07-19 | 2016-12-07 | 东南大学 | A kind of grid drive circuit of the bridge power transducer using SiC power tube |
| CN106712470A (en)* | 2016-12-30 | 2017-05-24 | 江苏中科君芯科技有限公司 | Improved magnetic isolation type IGBT driving circuit |
| CN106787633A (en)* | 2016-12-16 | 2017-05-31 | 广州金升阳科技有限公司 | Isolated drive circuit and isolation drive system |
| CN107800293A (en)* | 2016-08-29 | 2018-03-13 | 丰郅(上海)新能源科技有限公司 | A kind of drive circuit and the photovoltaic power optimization system using the drive circuit |
| CN107809177A (en)* | 2017-09-25 | 2018-03-16 | 南京航空航天大学 | A kind of adjustable drive circuit of isolated form output voltage |
| CN109450264A (en)* | 2018-10-29 | 2019-03-08 | 南京航空航天大学 | One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method |
| CN109980905A (en)* | 2019-04-15 | 2019-07-05 | 湖南德雅坤创科技有限公司 | Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe |
| CN112072632A (en)* | 2020-09-18 | 2020-12-11 | 成都天锐星通科技有限公司 | Power supply circuit for inhibiting resonance and communication equipment |
| CN112394228A (en)* | 2020-11-17 | 2021-02-23 | 青岛聚能创芯微电子有限公司 | Gallium nitride power device on-resistance test circuit |
| CN112567612A (en)* | 2018-10-26 | 2021-03-26 | 欧姆龙株式会社 | Drive circuit for switching element and switching circuit |
| CN113765342A (en)* | 2021-09-02 | 2021-12-07 | 深圳英飞源技术有限公司 | A resonant drive circuit and its control method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202268797U (en)* | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Circuit for improving performance of isolated driving circuit |
| CN103095108A (en)* | 2013-02-25 | 2013-05-08 | 南京航空航天大学 | Magnet isolation drive circuit |
| CN103414354A (en)* | 2013-07-16 | 2013-11-27 | 燕山大学 | Power switch device pulse transformer isolation driving circuit |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202268797U (en)* | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Circuit for improving performance of isolated driving circuit |
| CN103095108A (en)* | 2013-02-25 | 2013-05-08 | 南京航空航天大学 | Magnet isolation drive circuit |
| CN103414354A (en)* | 2013-07-16 | 2013-11-27 | 燕山大学 | Power switch device pulse transformer isolation driving circuit |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106208711A (en)* | 2016-07-19 | 2016-12-07 | 东南大学 | A kind of grid drive circuit of the bridge power transducer using SiC power tube |
| CN106026721B (en)* | 2016-07-19 | 2019-06-18 | 东南大学 | A gate drive circuit of ZCS full-bridge converter using SiC power transistor |
| CN106026721A (en)* | 2016-07-19 | 2016-10-12 | 东南大学 | Grid drive circuit of ZCS full bridge converter employing SiC power tubes |
| CN107800293B (en)* | 2016-08-29 | 2020-09-08 | 丰郅(上海)新能源科技有限公司 | Drive circuit and photovoltaic power optimization system adopting same |
| CN107800293A (en)* | 2016-08-29 | 2018-03-13 | 丰郅(上海)新能源科技有限公司 | A kind of drive circuit and the photovoltaic power optimization system using the drive circuit |
| CN106787633A (en)* | 2016-12-16 | 2017-05-31 | 广州金升阳科技有限公司 | Isolated drive circuit and isolation drive system |
| CN106712470A (en)* | 2016-12-30 | 2017-05-24 | 江苏中科君芯科技有限公司 | Improved magnetic isolation type IGBT driving circuit |
| CN106712470B (en)* | 2016-12-30 | 2023-03-17 | 江苏中科君芯科技有限公司 | Improved magnetic isolation IGBT driving circuit |
| CN107809177A (en)* | 2017-09-25 | 2018-03-16 | 南京航空航天大学 | A kind of adjustable drive circuit of isolated form output voltage |
| CN112567612A (en)* | 2018-10-26 | 2021-03-26 | 欧姆龙株式会社 | Drive circuit for switching element and switching circuit |
| CN112567612B (en)* | 2018-10-26 | 2024-02-13 | 欧姆龙株式会社 | Driving circuit of switching element and switching circuit |
| CN109450264A (en)* | 2018-10-29 | 2019-03-08 | 南京航空航天大学 | One kind recommending mode of resonance silicon carbide power tube drive circuit and its control method |
| CN109980905A (en)* | 2019-04-15 | 2019-07-05 | 湖南德雅坤创科技有限公司 | Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe |
| CN112072632A (en)* | 2020-09-18 | 2020-12-11 | 成都天锐星通科技有限公司 | Power supply circuit for inhibiting resonance and communication equipment |
| CN112394228A (en)* | 2020-11-17 | 2021-02-23 | 青岛聚能创芯微电子有限公司 | Gallium nitride power device on-resistance test circuit |
| CN113765342A (en)* | 2021-09-02 | 2021-12-07 | 深圳英飞源技术有限公司 | A resonant drive circuit and its control method |
| Publication | Publication Date | Title |
|---|---|---|
| CN105449997A (en) | A power switch tube isolated gate drive circuit for a power converter | |
| CN108683327B (en) | Silicon carbide MOSFET drive circuit | |
| US8810287B2 (en) | Driver for semiconductor switch element | |
| CN110048699A (en) | A kind of gate driving circuit inhibiting the bridge arm crosstalk of GaN half-bridge module | |
| TWI542131B (en) | Switchable buck converter with?zero voltage switching capability operating with a stabilized switching frequency | |
| US20220029545A1 (en) | Resonant converter | |
| CN104617752A (en) | Driving method of gallium nitride transistor, driving circuit thereof, and fly-back converter using the circuit | |
| CN103944549A (en) | High-reliability MOSFET drive circuit | |
| KR20210029105A (en) | Transformer-based driver for power switches | |
| CN103095108A (en) | Magnet isolation drive circuit | |
| CN108063542B (en) | Simple, reliable and low-cost driving circuit for silicon carbide power switch device | |
| CN102307003A (en) | Insulation driving circuit of power switching tube | |
| CN105048783B (en) | It is a kind of based on burst pulse demodulation from energy storage IGBT drive circuit | |
| US11929669B2 (en) | Totem-pole bridgeless power factor correction device and power supply | |
| CN202696454U (en) | Gate drive circuit | |
| US10404176B2 (en) | Switched capacitor voltage converters with current sense circuits coupled to tank circuits | |
| CN108336896A (en) | Negative pressure driving circuit | |
| CN105610307B (en) | A kind of power switch tube isolation gate drive circuit generating fixed negative pressure | |
| Dong et al. | A gate drive circuit with mid-level voltage for GaN transistors in a 7-MHz isolated resonant converter | |
| CN110518806A (en) | A kind of MOSFET series circuit for high input voltage reverse exciting switching voltage regulator | |
| CN207732627U (en) | IGBT driving power supply with wide voltage input | |
| CN114600365A (en) | Inverter circuit and method, for example for use in power factor correction | |
| CN113949260A (en) | High-speed high-voltage large-current modulation circuit | |
| CN107086789A (en) | A Secondary Controlled Quasi-Resonant Switching Power Converter | |
| CN116388534A (en) | Isolation type SiC MOS tube driving circuit capable of being turned off in full-time zone under negative pressure |
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication | Application publication date:20160330 |