A kind of PVD and HIPIMS preparation of industrialization superhard DLC carbon coating method and deviceTechnical field
The present invention relates to a kind of superhard DLC carbon-coating technique apparatus field, particularly a kind of PVD and HIPIMS preparation of industrialization superhard DLC carbon coating method and device.
Background technology
Adopt surperficial PVD (physical vapor deposition PhysicalVaporDeposition) coating can improve the surface property of workpiece significantly, as hardness, wear resistance, burnish resistance, erosion resistance etc., improve the workpiece cavity surface property such as anti scuffing, bite-resistant.PVD coating has become most workpiece and has improved life-span and the indispensable means of efficiency and be widely used in each field, has achieved good effect.PVD must consider the different situations such as workpiece material, thermal treatment, machined material, molding mode when carrying out coating, otherwise can affect coating performance, causes the wasting of resources, so the PVD coating process of study of various steel workpiece surface and treatment process seem particularly important.
Quasi-diamond film coating (Diamond-likeCarbon), is called for short DLC coating; Quasi-diamond (DLC) film is a kind of film of metastable class of the amorphous carbon containing a certain amount of diamond key (sp2 and sp3), so carbon is that can form different crystal with unordered structure.DLC carbon film can be doped DLC (N-DLC) film that different elements obtains adulterating, and thus has many performances similar to diamond film.Quasi-diamond (DLC) film has many premium propertiess similar or close to diamond, as high in hardness, Young's modulus is high, frictional coefficient is low, Bc is good, acoustical behavior is good, electric property is good.DLC film develops into today, has been that increasing investigator and industry member are known and pay close attention to, has had great application prospect in each field of industry.Current DLC film is widely used in multiple fields such as aerospace, precision optical machinery, microelectromechanicdevices devices, multiple head unit, automobile component, optical equipment and biomedicines, is the high performance inorganic non-metallic thin-film material with important application prospect.
The U.S. is using the strategic material one of of diamond like carbon film material as 21 century, the research of industry diamond-film-like, exploitation, preparations and applicatio advance just both in depth and in breadth, and method prepared by quasi-diamond is a lot: as ion beam assisted depositing, magnetron sputtering, Vacuum cathodic are deposition, plasma enhanced chemical vapor deposition, ion implantation etc.; But different preparation methods, the composition of DLC film, stuctures and properties have very large difference, high-power impulse magnetron sputtering target (highpowerimpulsmagnetronsputter) in prior art, the deficiency being called for short the existence of HIPIMS and PVD technology is: the preparation and application 1, being difficult to realize industrialization DLC film of fine quality, most of depositing device or device belong to laboratory prototype equipment, and preparation cost is high; Also cannot industrialized mass, industrialization level is low; 2, the DLC coating quality of preparation is unstable, and coating adhesion is poor, and thicknesses of layers extremely meagre (about 1 μm), cannot meet high kinematic pair, the specification of quality of the narrow surface coating DLC of high frequency friction; 3, simple DLC coating compatible performance in hardness, frictional behaviour, polishing machine is not good.
Summary of the invention
In order to solve the series of problems in as above existing C film DLC coating deposition, the invention provides a kind of PVD and HIPIMS preparation of industrialization superhard DLC carbon coating method and device, for defect of the prior art, the present invention adopts high energy ion implanted prosthetics to increase the bonding force of coating at workpiece surface, 28 nm deep below implanted ions workpiece surface, adopt the carbon film of multilayer different hardness carry out composite growth thus obtain C film DLC coating that is smooth and surface friction property excellence; Realize the exceptional hardness diamond-like coating equipment of workpiece surface, and make coating have high adhesive force, ultrahigh hardness, high friction resistance energy, high wear resistance performance and high self-lubricating property.
What the present invention presented is can avoid carbon back diamond-like coating defect deposition method as outlined above in a kind of known technology with using so far. described carbon back diamond-like coating possesses following feature: the Vickers' hardness 40-80GPa of carbon-base film coating, frictional coefficient <0.1, hydrogen richness 7-11%, D/G>0.6; Described carbon back diamond-like coating, just because of have these extraordinary characteristics, just quotes out the concept of " superhard " carbon back quasi-diamond DLC coating.
For achieving the above object, technical scheme of the present invention is as follows: a kind of PVD and HIPIMS preparation of industrialization superhard DLC carbon coating device, be called for short coating device, comprise coating room, vacuum cavity, operation control, front door, rear door, non-equilibrium magnetic controlled negative electrode, high power pulse magnetron cathode, target baffle plate, workpiece substrate, center anode, vacuum mechanical pump, molecular pump, cold and hot water controlling box, function gas manifold, cathode targets barrier, cavity well heater, three-dimensional rotation frame, target a-power supply cabinet, target B-source cabinet, target c-power supply cabinet, target D power cabinet, HIPIMS power cabinet, grid bias power supply cabinet, Controlling System light current cabinet, plate supply, loading and unloading transport trolley, transport trolley track, HIPIMS magnetic filter, it is characterized in that:
Described high power pulse magnetron cathode (highpowerimpulsmagnetronsputter), referred to as HIPIMS, described non-equilibrium magnetic controlled negative electrode, referred to as UBM, described coating device, is made up of coating room, operation control, vacuum mechanical pump, molecular pump, cold and hot water controlling box, function gas manifold, cavity well heater, three-dimensional rotation frame, power-supply system, handling equipment, described coating room is weldingly fixed on device framework, and described device framework is rectangle stainless steel square tube welded construction, and described coating room comprises vacuum cavity, front door, rear door, described vacuum cavity is octahedra stainless steel tubular bilayer structure, described front door and rear door are arranged at the front and back of described vacuum cavity respectively, the cross section of described front door and rear door is three folded plate types, before described, rear door span takies described octahedral three adjacent facetss, described front door is fixedly connected on the right flank lower rim of described vacuum cavity by hinge, described rear door is fixedly connected on the right flank upper limb of described vacuum cavity by hinge, described front door and described rear door open the door setting all to the right, and be tightly connected with described vacuum cavity, the top center of described vacuum cavity is provided with center anode, the bottom surface of described vacuum cavity is provided with three-dimensional rotation frame, described three-dimensional rotation frame is provided with workpiece substrate, described vacuum cavity inside is provided with four UBM, described four UBM are assemblied in face, octahedral upper left, face, lower-left, upper right face, right lower position in described vacuum cavity respectively, described UBM is arranged near medial surface, and described UBM front is provided with cathode targets barrier, be provided with HIPIMS outside described vacuum cavity left surface, between described HIPIMS and described vacuum cavity, be provided with HIPIMS magnetic filter, described vacuum cavity upper inside face and downside, be respectively provided with one group of cavity well heater, described vacuum cavity right flank is provided with vacuum interface, described vacuum interface is communicated with vacuum mechanical pump, molecular pump by pipeline, the bilayer structure of described vacuum cavity is communicated with cold and hot water controlling box by pipeline, described vacuum cavity bottom surface offers gas interface, and described gas interface is communicated with function gas manifold, described power-supply system comprises target a-power supply cabinet, target B-source cabinet, target c-power supply cabinet, target D power cabinet, HIPIMS power cabinet, grid bias power supply cabinet, Controlling System light current cabinet, plate supply, described power-supply system and described operation control are electrically connected, and described operation control and described four UBM, HIPIMS, vacuum mechanical pump, molecular pump, cold and hot water controlling box, function gas manifold, cavity well heater, three-dimensional rotation frame drive-motor are electrically connected, described front door arranged outside has handling equipment, and described handling equipment is made up of loading and unloading transport trolley and transport trolley track.
Described power-supply system becomes one formula power cabinet, is set to operation control above described power cabinet.
Described three-dimensional rotation frame is driven by the motor under described vacuum cavity, and described three-dimensional rotation frame is connected with described motor seal axle; Described three-dimensional rotation frame is provided with multiple satellite swinging strut, and described satellite support and described three-dimensional rotation frame are by gear toe joint, and described satellite swinging strut, along with three-dimensional rotation frame synchronous axial system, described satellite support is provided with multilayer workpiece matrix.
Described UBM is assembled side by side by polylith permanent magnet, and the magnetic pole over-over mode arrangement of described permanent magnet, the coil winding of coiling outside described permanent magnet, the magnetic line of force of each UBM described and described HIPIMS, at described vacuum cavity Inner Constitution closed magnetic field.
Be provided with cooling channel in described UBM and described HIPIMS, described cooling channel is communicated with described cold and hot water controlling box.
Described function gas manifold and nitrogen, argon gas, acetylene source of the gas pass through pipeline communication, are provided with regulated valve and under meter in described function gas manifold.
A kind of PVD and HIPIMS prepares superhard DLC coating process, is called for short coating process:
1, coating apparatus is started: initiation parameter is arranged;
2, vacuumize, open oil-sealed rotary pump, molecular pump; Start cavity heater heats;
3, target cleaning, carries out icon bombardment cleaning to target material surface;
4, short period of time argon ion bombardment, passes into argon gas, carries out Bombardment and cleaning to workpiece substrate surface;
5, pulsed magnetron sputtering, start the WC cathode target of HIPIMS, arrange bias voltage and be-800 volts, sputtering time is 5-10 minutes;
6, pulsed magnetron sputtering prepares WC middle layer, by the WC cathode target of HIPIMS, prepares WC middle layer to workpiece substrate top coat;
7, UBM and HIPIMS magnetron sputtering, preparation WC middle layer, bias voltage-175 volts, 5-10 minutes time;
8, non-balance magnetically controlled sputter, preparation C-DLC coating, arrange bias voltage and be-150 volts, control current density is 10W/cm2; Controlling acetylene gas flow is 30sccm-160sccm;
9, non-balance magnetically controlled sputter, prepares soft coating, arranges bias voltage and is-75 volts, and current density is 10W/cm2; Controlling acetylene flow is 160sccm; Obtained soft DLC coating.Technical characteristic of the present invention is as follows:
1, the diamond like carbon film coating that as mentioned above prepared by coating apparatus and coating process is 10-5to 10– 6in the vacuum environment of mbar, participating in the argon gas atmosphere environment reacted hardly, by HIPIMS and UBM, magnetron sputtering institute formation of deposits is carried out to high purity graphite target.
2, in order to make the hardness of DLC diamond like carbon film coating reach Vickers' hardness 40-80Gpa, participate in the gas of reaction, as acetylene, the flow range be supplied in vacuum chamber is 2%-8%.
3, in described coated elements, non-equilibrium magnetic controlled negative electrode is set to even number; Described UBM is assemblied in described vacuum chamber with symmetrical arrangement mode, and independent controllable, the power loss of the power acquisition of each UBM is less than 10W/cm2direct supply, each UBM is provided with the magnetic field array drive mechanism that independently can move forward and backward.
4, the maximum withstand temp of described workpiece substrate is 200 DEG C, and described workpiece substrate applies negative bias, and the scope of the voltage of described negative bias is-50 volts--150 volts.
5, the polarization of described magnetic field array is from the alternately change of each adjacent cathodes, the outer shroud magnetic line of force of magnet, such as N pole is run out of by contiguous S pole thus formed described closed magnetic field, and therefore, described closed magnetic field can suppress discharging current to flow towards the vacuum chamber wall of ground connection.
6, the center anode that described vacuum cavity top center is arranged is mainly used to guide the plasma body produced continuously by non-equilibrium magnetic controlled negative electrode and flows towards vacuum chamber center position, the workpiece of such rotation just by abundant around plasma body coated by, the bias voltage that the described anode of central position applies at least can be attracted to 80-90% of the plasma body summation that in vacuum chamber, all UBM produce.
7, the voltage range be applied on described anode control at+100 volts-+150 volts, like this can 100% summation reaching all UBM magnitudes of current.
8, described solenoid is used for curling up the periphery at non-equilibrium magnetic controlled negative electrode, and the number of turn that described solenoid is wound around is determined by the electricity by single UBM galvanic current, and technological standards is that the magnetic flux produced on UBM reaches 100 Gausses; Apply electric current with the target corroded start from scratch to not using, electric current increase continuously for reducing horizontal flux in the etching throwing face of target, such guarantee UBM magnetic flux is stabilized in a constant value, is similar to original target material surface all the time the same; Carry out control and regulation UBM under constant current mode by sustain discharge voltage and can realize above-mentioned operating mode.
All there is larger internal stress in the DLC carbon back diamond-like coating 9, being greater than 40Gpa due to coating hardness, this internal stress produces strong challenge for the bonding force that coating deposits; Therefore, be required for the pre-treatment before workpiece coating, in described workpiece preprocessing process, workpiece surface will be provided with the volts DS of-800 volts--1200 volts, and pretreated described ion source has Cr, Ti, Nb, Ta, WorWC.
10, continuing described by the 9th, being greater than 2A/cm by utilizing 50 μ s to 150 μ s pulse wavelength and pulse current density2high power pulse magnetic controlling target electric discharge produce plasma body, described plasma body etches workpiece surface and is implanted to below described workpiece substrate surface, and its implantation depth reaches the dense list surface layer of 25nm.
11, by the ion of described workpiece substrate material and implantation, usually can form a novel intermediate layer, when the negative bias voltage on workpiece substrate gradually reduces, sedimentation rate will progressively increase; Both described bias voltage and sedimentation rate will reach when thickness is 0.2-2um at intermediate layer and stop, and the thickness of this intermediate layer depends on the total thickness of final coating certainly.
12, described high-power impulse magnetron sputtering target needs a special negative electrode, and the size of this cathode targets depends on following several aspect: the total capacity available of high-power impulse magnetron sputtering target, pulse current density is more than 2A/cm2, in practical application, high-power impulse magnetron sputtering cathode targets mostly adopts less size.
13, when carrying out the etching/ion implantation technology of high-power impulse magnetron sputtering target, the UBM target in vacuum cavity is provided with adjustable non-magnetic steel barrier and protects to prevent contaminated; In addition, the steel protective guard that high-power impulse magnetron sputtering target is provided with magnetic barrier and magnetic is protected.
14, in order to reach the skin friction coefficient of DLC coating film to being less than 0.1 (metal to-metal contact), the top layer of described DLC coating, under the gas part participating in reacting hardly encloses environment, one deck carbon-coating is deposited, i.e. self-lubricating coat in use; The mode of deposition of described self-lubricating coat in use is: the supply flow rate of acetylene gas accounts for 30%-50% of argon gas feed flow; Described self-lubricating coat in use hardness be 15GPa-20GPa, described self-lubricating coat in use frictional coefficient 0.05-0.07, described self-lubricating coat in use thickness general control is between 0.2-1.0 μm.
The present invention makes carbon back diamond-like coating possess following characteristic: the Vickers' hardness 40-80GPa of carbon-base film coating, frictional coefficient <0.1, hydrogen richness 7-11%, D/G>0.6; Carbon back diamond-like coating DLC, just because of have these extraordinary characteristics, is just called as " superhard " carbon back carbon quasi-diamond DLC coating.
Described non-equilibrium magnetic controlled negative electrode, its main body is formed by the copper material machining be applicable to, cold water channel be placed on the interior of linear magnetic array and outer between; The configuration of a peripheral solenoid concentric with negative electrode is used to produce the magnetic field parallel with outer magnetic array magnetic pole, and magnetic field the is forming loop line effect by means of coil electromagnetism field set up for the Typical Disposition by permanent magnet can be reinforced; The key character of one of UBM is that formed magnetic field array can carry out front-rear reciprocation movement in addition, and this feature also makes up the defect that magneticstrength that the erosion due to typical magnetic controlling target surface causes increases simultaneously.The target being used for growing superhard DLC is by highly purified graphite and be installed on described UBM cathode and realize.Magnetron sputtering process is by direct supply 10W/cm2produce sputtering, voltage range is initiated-500 volts time, and shielding power supply adopts current constant control, like this, make sputtering voltage can keep constant by mobile corresponding magnetic field array, workpiece substrate applies the temperature data that negative bias scope depends primarily on plated matrix allow at-50 volts to-200 volts.
Described center anode effect, when the voltage increase center anode is larger, so flows to the electric current also corresponding increase of center anode electric current and matrix; In special sputtering configuration when anode voltage-50 volts, current direction negative electrode sum also can reach requirement, this means, does not almost have the vacuum chamber wall of current direction; When continuing, when increasing anode voltage, the formation and workpiece substrate electric current that further increase secondary electron are raised to higher value, even strengthen ion bombardment workpiece substrate to several million Acm-2.
Described vacuum cavity is provided with 5 cathode targets, one of them HIPIMS target and four UBM targets, after vacuum chamber heating, just vacuum system is started, its objective is to reduce amount of gas evolved; Described 5 determine the magnetron cathode of position before removable barrier use argon ion graphite target to be carried out to the cleaning of several minutes, namely target itself is cleaned, makes it to avoid the pollution by air; After this step performs, what closely follow is argon ion sputtering etching, approximately needs 10 minutes; The pre-treatment of high-power impulse magnetron sputtering target is equipped with WC target cathode and sputters to realize in pure argon, and keep substrate bias at-1200 volts, the time is 6 minutes to 10 minutes simultaneously; The follow-up bias voltage reducing workpiece substrate according to staged, reaches-75 volts gradually, and the etching of described HIPIMS is progressively converted to thin film deposition growth technique with implantation technique, so namely on workpiece substrate, generates described middle layer; Further along with the growth of coating, there is the mode of overlapping deposition, reduce HIPIMS sputtering raste gradually, increase the sputtering raste of UBM carbon target gradually simultaneously, finally be deposited as desired superhard DLC coating, the final stage of carbon film deposition is the flow by increasing argon gas, the flow of indirect minimizing acetylene gas, then reduce gradually and control constant acetylene gas flow, complete the preparation of self-lubricating coat in use, by controlling the flow of argon gas and acetylene gas, during the coating of the minimum friction valve desired by acquisition, terminate whole coating process flow process.
Pass through technique scheme, the beneficial effect of technical solution of the present invention is: adopt multilayer film compounding technology, utilize PVD process and HIPIMS method, design one is industrialized prepares diamond-like coating method and apparatus, realize the exceptional hardness diamond-like coating equipment of workpiece surface, and make coating have ultrahigh hardness, high friction resistance energy, high wear resistance performance and high self-lubricating property; Coating process of the present invention is simple, compound coating condition controllable precise, and quality of forming film is high, stable performance, and finished product rate is high, with low cost; There is ultrahigh hardness and excellent self-lubricating wear Characteristics.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of PVD and the HIPIMS preparation of industrialization superhard DLC carbon coating method disclosed in the embodiment of the present invention and apparatus structure vertical view schematic diagram;
Fig. 2 is a kind of PVD and the HIPIMS preparation of industrialization superhard DLC carbon coating method disclosed in the embodiment of the present invention and device partial enlarged drawing;
Fig. 3 is a kind of PVD and the HIPIMS preparation of industrialization superhard DLC carbon coating method disclosed in the embodiment of the present invention and device vacuum cavity structural representation;
Fig. 4 is a kind of PVD and the HIPIMS preparation of industrialization superhard DLC carbon coating method disclosed in the embodiment of the present invention and device technique schematic flow sheet.
Numeral and the corresponding component title represented by letter in figure:
1. door before coating room 2. vacuum cavity 3. operation control 4.
5. door 6. non-equilibrium magnetic controlled negative electrode 7. high power pulse magnetron cathode after
8. target baffle plate 9. workpiece substrate 10. center anode 11. vacuum mechanical pump
12. molecular pump 13. cold and hot water controlling box 14. function gas manifolds
15. cathode targets barrier 16. cavity well heater 17. three-dimensional rotation frame 18. magnetic line of force
19. closed magnetic field 20. target a-power supply cabinet 21. target B-source cabinets
22. target c-power supply cabinet 23. target D power cabinet 24.HIPIMS power cabinets
25. grid bias power supply cabinet 26. Controlling System light current cabinet 27. plate supplies
28. loading and unloading transport trolley 29. transport trolley track 30.HIPIMS magnetic filters
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
According to Fig. 1, Fig. 2 and Fig. 3, the invention provides a kind of PVD and HIPIMS preparation of industrialization superhard DLC carbon coating device, comprise coating room 1, vacuum cavity 2, operation control 3, front door 4, rear door 5, non-equilibrium magnetic controlled negative electrode 6, high power pulse magnetron cathode 7, target baffle plate 8, workpiece substrate 9, center anode 10, vacuum mechanical pump 11, molecular pump 12, cold and hot water controlling box 13, function gas manifold 14, cathode targets barrier 15, cavity well heater 16, three-dimensional rotation frame 17, target a-power supply cabinet 18, target B-source cabinet 19, target c-power supply cabinet 20, target D power cabinet 21, HIPIMS power cabinet 22, grid bias power supply cabinet 23, Controlling System light current cabinet 24, plate supply 25, loading and unloading transport trolley 26, transport trolley track 27, HIPIMS magnetic filter 28.
Described high power pulse magnetron cathode, referred to as HIPIMS, described non-equilibrium magnetic controlled negative electrode, referred to as UBM, described coating device is made up of coating room 1, operation control 3, vacuum mechanical pump 11, molecular pump 12, cold and hot water controlling box 13, function gas manifold 14, cavity well heater 16, three-dimensional rotation frame 17, power-supply system, handling equipment, described coating room 1 is weldingly fixed on device framework, and described device framework is rectangle stainless steel square tube welded construction, and described coating room 1 comprises vacuum cavity 2, front door 4, rear door 5, described vacuum cavity 2 is octahedra stainless steel tubular bilayer structure, described front door 4 and rear door 5 are arranged at the front and back of described vacuum cavity 2 respectively, the cross section of described front door 4 and rear door 5 is three folded plate types, described front door 4, rear door 5 span takies described octahedral three adjacent facetss, described front door 4 is fixedly connected on the right flank lower rim of described vacuum cavity 2 by hinge, described rear door 5 is fixedly connected on the right flank upper limb of described vacuum cavity 2 by hinge, described front door 4 and described rear door 5 open the door setting all to the right, and be tightly connected with described vacuum cavity 2, the top center of described vacuum cavity 2 is provided with center anode 10, the bottom surface of described vacuum cavity 2 is provided with three-dimensional rotation frame 17, described three-dimensional rotation frame 17 is provided with workpiece substrate 9, described vacuum cavity 2 inside is provided with four UBM6, described four UBM6 are assemblied in face, octahedral upper left, face, lower-left, upper right face, right lower position in described vacuum cavity 2 respectively, described UBM6 is arranged near medial surface, and described UBM6 front is provided with cathode targets barrier 15, be provided with HIPIMS7 outside described vacuum cavity 3 left surface, between described HIPIMS7 and described vacuum cavity 2, be provided with HIPIMS magnetic filter 30, described vacuum cavity 2 upper inside face and downside, be respectively provided with one group of cavity well heater 16, described vacuum cavity 2 right flank is provided with vacuum interface, described vacuum interface is communicated with vacuum mechanical pump 11, molecular pump 12 by pipeline, the bilayer structure of described vacuum cavity 2 is communicated with cold and hot water controlling box 13 by pipeline, described vacuum cavity 2 bottom surface offers gas interface, and described gas interface is communicated with function gas manifold 14, described power-supply system comprises target a-power supply cabinet 20, target B-source cabinet 21, target c-power supply cabinet 22, target D power cabinet 23, HIPIMS power cabinet 25, grid bias power supply cabinet 24, Controlling System light current cabinet 26, plate supply 27, described power-supply system and described operation control 3 are electrically connected, and described operation control 3 is electrically connected with described four UBM6, HIPIMS7, vacuum mechanical pump 11, molecular pump 12, cold and hot water controlling box 13, function gas manifold 14, cavity well heater 16, three-dimensional rotation frame 17 drive-motor, described front door 4 arranged outside has handling equipment, and described handling equipment is made up of loading and unloading transport trolley 28 and transport trolley track 29.
Described power-supply system becomes one formula power cabinet, is set to operation control 3 above described power cabinet.
Described three-dimensional rotation frame 17 is driven by the motor under described vacuum cavity 2, and described three-dimensional rotation frame 17 is connected with described motor seal axle; Described three-dimensional rotation frame 17 is provided with multiple satellite swinging strut, described satellite support and described three-dimensional rotation frame 17 are by gear toe joint, described satellite swinging strut, along with three-dimensional rotation frame 17 synchronous axial system, described satellite support is provided with multilayer workpiece matrix 9.
Described UBM6 is assembled side by side by polylith permanent magnet, and the magnetic pole over-over mode arrangement of described permanent magnet, the coil winding of coiling outside described permanent magnet, the magnetic line of force of each UBM6 described and described HIPIMS7, at described vacuum cavity 2 Inner Constitution closed magnetic field.
Be provided with cooling channel in described UBM6 and described HIPIMS7, described cooling channel is communicated with described cold and hot water controlling box 13.
Described function gas manifold 14 and nitrogen, argon gas, acetylene source of the gas, by pipeline communication, are provided with regulated valve and under meter in described function gas manifold 14.
According to Fig. 4, a kind of PVD and HIPIMS of the present invention prepares superhard DLC coating process, is called for short coating process:
1, coating apparatus is started: initiation parameter is arranged;
2, vacuumize, open oil-sealed rotary pump 11, molecular pump 12; Start cavity well heater 16 to heat;
3, target cleaning, carries out icon bombardment cleaning to target material surface;
4, short period of time argon ion bombardment, passes into argon gas, carries out Bombardment and cleaning to workpiece substrate 9 surface;
5, pulsed magnetron sputtering, start the WC cathode target of high power pulse magnetic control sputtering HIPIMS7, arrange bias voltage and be-800 volts, sputtering time is 3 minutes;
6, pulsed magnetron sputtering prepares WC middle layer, by the WC cathode target of HIPIMS7, prepares WC middle layer to workpiece substrate 9 top coat;
7, UBM6 and HIPIMS7 magnetron sputtering, preparation WC middle layer, bias voltage-175 volts, 8 minutes time;
8, non-balance magnetically controlled sputter, preparation C-DLC coating, arrange bias voltage and be-75 volts, control current density is 10W/cm2; Controlling acetylene gas flow is 60sccm; By the requirement of coat-thickness, carry out the control of corresponding coating time period;
9, last, arrange bias voltage and be-75 volts, current density is 10W/cm2; Controlling acetylene flow is 15sccm; Obtained soft DLC coating, makes the surface property of carbon coating DLC reach frictional coefficient <0.1.
The present invention makes carbon back diamond-like coating possess following characteristic: the Vickers' hardness 40-80GPa of carbon-base film coating, frictional coefficient <0.1, hydrogen richness 7-11%, D/G>0.6.
Described non-equilibrium magnetic controlled negative electrode 6, its main body is formed by the copper material machining be applicable to, cold water channel be placed on the interior of linear magnetic array and outer between; The configuration of a peripheral solenoid concentric with negative electrode is used to produce the magnetic field parallel with outer magnetic array magnetic pole, and magnetic field the is forming loop line effect by means of coil electromagnetism field set up for the Typical Disposition by permanent magnet can be reinforced; The key character of one of UBM6 is that formed magnetic field array can carry out front-rear reciprocation movement in addition, and this feature also makes up the defect that magneticstrength that the erosion due to typical magnetic controlling target surface causes increases simultaneously; The target being used for growing superhard DLC is by highly purified graphite and be installed on described UBM cathode and realize, and magnetron sputtering process is by direct supply 10W/cm2produce sputtering, voltage range is initiated-500 volts time, and shielding power supply adopts current constant control, like this, make sputtering voltage can keep constant by mobile corresponding magnetic field array, workpiece substrate 9 applies the temperature data that negative bias scope depends primarily on plated matrix allow at-50 volts to-200 volts.
Described center anode 10 effect, when the voltage increase center anode 10 is larger, so flows to the electric current also corresponding increase of center anode 10 electric current and workpiece substrate 9; In special sputtering configuration when anode voltage-50 volts, current direction negative electrode sum also can reach requirement, this means, does not almost have the vacuum chamber wall of current direction; When continuing, when increasing anode voltage, the formation and workpiece substrate 9 electric current that further increase secondary electron are raised to higher value, even strengthen ion bombardment workpiece substrate to several million Acm-2.
Described vacuum cavity 2 is provided with 5 cathode targets, one of them HIPIMS7 target and four UBM6 targets, after vacuum chamber 2 heats, just vacuum system is started, its objective is to reduce amount of gas evolved; Described 5 determine the magnetron cathode of position before removable barrier use argon ion graphite target to be carried out to the cleaning of several minutes, namely target itself is cleaned, makes it to avoid the pollution by air; After this step performs, what closely follow is argon ion sputtering etching, approximately needs 8 minutes; The pre-treatment of high-power impulse magnetron sputtering target is equipped with WC target cathode and sputters to realize in pure argon, and keep substrate bias at-1200 volts, the time is 8 minutes simultaneously; The follow-up bias voltage reducing workpiece substrate according to staged, reaches-75 volts gradually, and the etching of described HIPIMS is progressively converted to thin film deposition growth technique with implantation technique, so namely on workpiece substrate, generates described middle layer; Further along with the growth of coating, there is the mode of overlapping deposition, reduce HIPIMS sputtering raste gradually, increase the sputtering raste of UBM carbon target gradually simultaneously, finally be deposited as desired superhard DLC coating, the final stage of carbon film deposition is the flow by increasing argon gas, the flow of indirect minimizing acetylene gas, then reduce gradually and control constant acetylene gas flow, complete the preparation of self-lubricating coat in use, by controlling the flow of argon gas and acetylene gas, during the coating of the minimum friction valve desired by acquisition, terminate whole coating process flow process.
Pass through above-described embodiment, the beneficial effect of technical solution of the present invention is: adopt multilayer film compounding technology, utilize PVD process and HIPIMS method, design one is industrialized prepares diamond-like coating method and apparatus, realize the exceptional hardness diamond-like coating equipment of workpiece surface, and make coating have ultrahigh hardness, high friction resistance energy, high wear resistance performance and high self-lubricating property; Coating process of the present invention is simple, compound coating condition controllable precise, and quality of forming film is high, stable performance, and finished product rate is high, with low cost; There is ultrahigh hardness and excellent self-lubricating wear Characteristics.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.