技术领域technical field
本发明涉及半导体激光器技术领域，具体涉及一种基于多光栅结构的半导体激光器合束装置及合束方法。The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser beam combining device and a beam combining method based on a multi-grating structure.
背景技术Background technique
半导体激光器具有体积小、重量轻、效率高等优点，目前已在激光医疗、光纤激光泵浦、激光融覆、激光焊接等领域广泛应用。但是，半导体激光器的单元功率小(小于10瓦)、光束质量差(快轴30度，慢轴10度)、功率密度低，(千瓦/平方厘米级)这些缺点导致半导体激光器不能作为千瓦、万瓦级直接光源应用在激光加工、国防等领域。Semiconductor lasers have the advantages of small size, light weight, and high efficiency. They have been widely used in laser medical treatment, fiber laser pumping, laser cladding, and laser welding. However, the unit power of the semiconductor laser is small (less than 10 watts), the beam quality is poor (the fast axis is 30 degrees, the slow axis is 10 degrees), and the power density is low (kW/cm2). Watt-level direct light sources are used in laser processing, national defense and other fields.
现有的几何光学合束方法是将半导体激光器进行空间、偏振及波长合束，实现高功率输出。将多个半导体激光器发射的光束通过诸如棱镜、平板等几何光学元件组合到一起，形成两个方向且光束质量基本相同的一个二维密集排列的光束列阵，进而实现光纤耦合输出。这种几何光学合束方法中，模块的光束质量与半导体激光器的数量有关，半导体激光器的数量越多，相同发散角情况下，光束列阵的光斑尺寸也就越大，模块相应的光束质量也就越差。目前，已有研究机构和公司采用这种几何光学合束方法实现高功率输出，最高输出功率超过万瓦，但是光束质量(BeamParameterProduct(BPP))相对较差，JoergMalchus等人采用这种几何光学合束方法实现了输出功率25kW，但是光束质量只有220mm.mrad(A25kWfiber-coupleddiodelaserforpumpingapplications,JoergMalchus,VolkerKrause,ArndKoestersandDavidG.MatthewsProc.ofSPIEVol.896589650B2014)。The existing geometrical optics beam combining method is to combine the space, polarization and wavelength of semiconductor lasers to achieve high power output. The beams emitted by multiple semiconductor lasers are combined through geometrical optical elements such as prisms and plates to form a two-dimensional dense array of beams in two directions with basically the same beam quality, and then realize fiber coupling output. In this geometric optical beam combination method, the beam quality of the module is related to the number of semiconductor lasers. The more the number of semiconductor lasers, the larger the spot size of the beam array and the corresponding beam quality of the module. worse. At present, some research institutes and companies have adopted this geometric optical beam combining method to achieve high power output, with the highest output power exceeding 10,000 watts, but the beam quality (Beam Parameter Product (BPP)) is relatively poor. Joerg Malchus et al. The beam method achieves an output power of 25kW, but the beam quality is only 220mm.mrad (A25kW fiber-coupled diode laser for pumping applications, JoergMalchus, VolkerKrause, ArndKoestersandDavidG.MatthewsProc.ofSPIEVol.896589650B2014).
上述现有的几何光学合束方法难以实现高光束质量输出，RobinK.Huang等人则采用了一种新的半导体激光器合束方法——外腔反馈光谱合束方法实现了输出功率2030W，光束质量达到3.75mm.mrad(Directdiodelaserswithcomparablebeamqualitytofiber,CO2,andsolidstatelasersRobinK.Huang,BienChann,JamesBurgess,MichaelKaimanProc.ofSPIEVol.82418241022012)。但是这种外腔反馈光谱合束方法是采用外谐振腔反馈结构，谐振腔长度长，接近米级，由于容易受到机械结构变形的影响，容易出现谐振腔失调，输出功率下降等情况。The above-mentioned existing geometric optical beam combining methods are difficult to achieve high beam quality output. RobinK.Huang et al. adopted a new semiconductor laser beam combining method-external cavity feedback spectral beam combining method to achieve an output power of 2030W, beam quality Reach 3.75mm.mrad (Directdiodelaserswithcomparablebeamqualitytofiber, CO2, and solidstatelasersRobinK.Huang, BienChann, JamesBurgess, MichaelKaimanProc.ofSPIEVol.82418241022012). However, this external cavity feedback spectral beam combining method uses an external resonant cavity feedback structure. The length of the resonant cavity is long, close to the meter level. Because it is easily affected by the deformation of the mechanical structure, it is prone to resonant cavity misalignment and output power drop.
发明内容Contents of the invention
为了解决现有的合束装置以及合束方法存在的半导体激光合束光束质量差的问题，本发明提供一种基于多光栅结构的半导体激光器合束装置及合束方法。In order to solve the problem of poor beam quality of semiconductor laser beam combining existing in existing beam combining devices and beam combining methods, the present invention provides a semiconductor laser beam combining device and beam combining method based on a multi-grating structure.
本发明为解决技术问题所采用的技术方案如下：The technical scheme that the present invention adopts for solving technical problems is as follows:
本发明的基于多光栅结构的半导体激光器合束装置，包括：The semiconductor laser beam combiner based on the multi-grating structure of the present invention comprises:
半导体激光器组，发出出射方向相同的组合光束；The semiconductor laser group emits combined beams with the same outgoing direction;
快轴准直镜组，对半导体激光器组发出的组合光束进行减小激光器块作用；The fast-axis collimating lens group reduces the effect of the laser block on the combined beam emitted by the semiconductor laser group;
慢轴准直镜组，对快轴准直镜组输出的光束进行减小慢轴方向发散角作用；The slow-axis collimating mirror group reduces the divergence angle of the slow-axis direction on the beam output by the fast-axis collimating mirror group;
体布拉格光栅组，将慢轴准直镜组输出的一部分准直光束按照原路反射回半导体激光器组中，实现半导体激光器组输出波长的锁定；The volume Bragg grating group reflects a part of the collimated beam output by the slow axis collimator group back to the semiconductor laser group according to the original path, so as to realize the locking of the output wavelength of the semiconductor laser group;
反射镜组，接收由体布拉格光栅组输出的另一部分准直光束并对其进行反射；The reflector group receives and reflects another part of the collimated light beam output by the volume Bragg grating group;
衍射光栅，接收由反射镜组输出的以不同入射角入射的光束，光束在衍射光栅上发生重叠并以相同的衍射角衍射，将半导体激光器组发出的组合光束合成一束输出；Diffraction grating, receiving beams incident at different incident angles output by the mirror group, the beams overlap on the diffraction grating and diffracted at the same diffraction angle, and combine the combined beams emitted by the semiconductor laser group into one output beam;
聚焦镜，对经衍射光栅衍射作用后的光束进行聚焦作用；The focusing mirror is used to focus the light beam after being diffracted by the diffraction grating;
多模光纤，对经聚焦镜聚焦作用后的光束进行耦合作用。Multimode optical fiber is used to couple the beams focused by the focusing lens.
进一步的，所述半导体激光器组由n个半导体激光器组成，所述快轴准直镜组由n个快轴准直镜组成，所述慢轴准直镜组由n个慢轴准直镜组成，所述体布拉格光栅组由n个体布拉格光栅组成，所述反射镜组由n个反射镜组成，n为正整数且2≤n≤1000；Further, the semiconductor laser group is composed of n semiconductor lasers, the fast-axis collimating mirror group is composed of n fast-axis collimating mirrors, and the slow-axis collimating mirror group is composed of n slow-axis collimating mirrors , the volume Bragg grating group is composed of n individual Bragg gratings, and the mirror group is composed of n mirrors, where n is a positive integer and 2≤n≤1000;
n个半导体激光器、n个快轴准直镜、n个慢轴准直镜、n个体布拉格光栅、n个反射镜一一对应安装。n semiconductor lasers, n fast-axis collimating mirrors, n slow-axis collimating mirrors, n individual Bragg gratings, and n reflecting mirrors are installed in one-to-one correspondence.
进一步的，半导体激光器为单管、线阵或叠阵。Further, the semiconductor laser is a single tube, a linear array or a stacked array.
进一步的，每个半导体激光器的前腔面都镀制上减反射膜，反射率在1％以下。Further, the front cavity surface of each semiconductor laser is coated with an anti-reflection film, and the reflectivity is below 1%.
进一步的，每个体布拉格光栅的反射率都在10％～30％之间，厚度都在1mm～5mm之间，反射带宽都在0.01nm～0.2nm之间，每个体布拉格光栅距离对应的半导体激光器的距离都在1mm～100mm之间，即每个慢轴准直镜距离对应的快轴准直镜的距离均在0.05mm～60mm之间，每个快轴准直镜距离对应的半导体激光器的距离均在0.05mm～5mm之间。Further, the reflectivity of each volume Bragg grating is between 10% and 30%, the thickness is between 1mm and 5mm, and the reflection bandwidth is between 0.01nm and 0.2nm. The distance between each volume Bragg grating and the corresponding semiconductor laser The distances are between 1mm and 100mm, that is, the distance between each slow-axis collimator and the corresponding fast-axis collimator is between 0.05mm and 60mm, and the distance between each fast-axis collimator and the corresponding semiconductor laser The distances are all between 0.05mm and 5mm.
进一步的，每个快轴准直镜的焦距均为0.9mm、快轴方向的发散角均为2mrad、光斑尺寸均为8mm；每个慢轴准直镜的焦距均为40mm、慢轴方向的发散角均为2.5mrad、光斑尺寸均为6.8mm。Further, the focal length of each fast-axis collimator is 0.9mm, the divergence angle in the fast-axis direction is 2mrad, and the spot size is 8mm; the focal length of each slow-axis collimator is 40mm, and the divergence angle in the slow-axis direction is 8mm. The divergence angle is 2.5mrad, and the spot size is 6.8mm.
进一步的，每个体布拉格光栅的厚度均为3mm、反射率均为15％、中心波长均为970nm、带宽均为0.1nm。Further, each volume Bragg grating has a thickness of 3 mm, a reflectivity of 15%, a central wavelength of 970 nm, and a bandwidth of 0.1 nm.
进一步的，每个半导体激光器入射到衍射光栅对应的入射角根据公式mλ＝d(sinθi+sinθd)确定，式中：m为衍射光栅的衍射级次，λ为激光器波长，d为衍射光栅的周期长度，θi为入射角，θd为衍射角。Further, the incident angle corresponding to each semiconductor laser incident on the diffraction grating is determined according to the formula mλ=d (sinθi+sinθd ), where m is the diffraction order of the diffraction grating, λ is the wavelength of the laser, and d is the diffraction grating The period length of , θi is the incident angle, θd is the diffraction angle.
进一步的，所述衍射光栅选用透射型衍射光栅或反射型衍射光栅，光栅的线数在1000线/mm～2000线/mm之间。Further, the diffraction grating is a transmission type diffraction grating or a reflection type diffraction grating, and the number of lines of the grating is between 1000 lines/mm and 2000 lines/mm.
本发明还提供了上述基于多光栅结构的半导体激光器合束装置的合束方法，包括以下步骤：The present invention also provides the beam combining method of the semiconductor laser beam combining device based on the multi-grating structure, comprising the following steps:
所述半导体激光器组发出出射方向相同的组合光束，该组合光束依次通过快轴准直镜组的减小激光器块作用、慢轴准直镜组的减小慢轴方向发散角作用后入射至体布拉格光栅组；The semiconductor laser group emits a combined light beam with the same outgoing direction, and the combined light beam is incident to the body after passing through the effect of reducing the laser block of the fast-axis collimator group and reducing the divergence angle of the slow-axis direction of the slow-axis collimator group. Bragg grating group;
所述体布拉格光栅组将半导体激光器组发出的一部分光束按照原路反射回对应的半导体激光器中，实现半导体激光器组输出波长的锁定；The volume Bragg grating group reflects a part of the light beam emitted by the semiconductor laser group back to the corresponding semiconductor laser according to the original path, so as to realize the locking of the output wavelength of the semiconductor laser group;
所述体布拉格光栅组将半导体激光器组发出的另一部分光束入射至对应的反射镜中，并通过反射镜组反射后以不同的入射角入射到衍射光栅上，光束在衍射光栅上发生重叠，然后以相同的衍射角衍射，将半导体激光器组发出的组合光束合成一束输出，出射光束再通过聚焦镜耦合进多模光纤中。The volume Bragg grating group injects another part of the light beam emitted by the semiconductor laser group into the corresponding reflector, and is incident on the diffraction grating at different incident angles after being reflected by the reflector group, and the beam overlaps on the diffraction grating, and then Diffraction at the same diffraction angle, the combined beams emitted by the semiconductor laser group are synthesized into one output beam, and the outgoing beam is coupled into the multimode fiber through the focusing mirror.
本发明的有益效果是：The beneficial effects of the present invention are:
本发明的基于多光栅结构的半导体激光器合束装置，结构简单不繁琐，反馈谐振腔长度短，结构稳定性较高，装调简单，不易受到机械结构变形的影响。The semiconductor laser beam combiner based on the multi-grating structure of the present invention has a simple and non-complex structure, a short feedback resonant cavity, high structural stability, simple assembly and adjustment, and is not easily affected by mechanical structure deformation.
本发明的基于多光栅结构的半导体激光器合束方法可以在保持较好光束质量的前提下大大提高半导体激光器的输出功率，在实现高光束质量的同时，不会出现由于反馈谐振腔失调而导致的输出功率下降。The semiconductor laser beam combination method based on the multi-grating structure of the present invention can greatly improve the output power of the semiconductor laser on the premise of maintaining better beam quality, and at the same time achieve high beam quality, there will be no problems caused by feedback resonant cavity misalignment The output power drops.
附图说明Description of drawings
图1为本发明的基于多光栅结构的半导体激光器合束装置的结构示意图。FIG. 1 is a schematic structural diagram of a semiconductor laser beam combiner based on a multi-grating structure of the present invention.
图中：1、半导体激光器组，101-10n、半导体激光器，2、快轴准直镜组，201-20n、快轴准直镜，3、慢轴准直镜组，301-30n、慢轴准直镜，4、体布拉格光栅组，401-40n、体布拉格光栅，5、反射镜组，501-50n、反射镜，6、衍射光栅，7、聚焦镜，8、多模光纤。In the figure: 1. Semiconductor laser group, 101-10n, semiconductor laser, 2. Fast axis collimator mirror group, 201-20n, fast axis collimator mirror, 3. Slow axis collimator mirror group, 301-30n, slow axis Collimating mirror, 4. Volume Bragg grating group, 401-40n, volume Bragg grating, 5. Reflecting mirror group, 501-50n, reflecting mirror, 6. Diffraction grating, 7. Focusing mirror, 8. Multimode optical fiber.
具体实施方式detailed description
以下结合附图对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with the accompanying drawings.
如图1所示，本发明的基于多光栅结构的半导体激光器合束装置，主要包括半导体激光器组1、快轴准直镜组2、慢轴准直镜组3、体布拉格光栅组4、反射镜组5、衍射光栅6、聚焦镜7和多模光纤8。As shown in Figure 1, the semiconductor laser beam combining device based on the multi-grating structure of the present invention mainly includes a semiconductor laser group 1, a fast axis collimator mirror group 2, a slow axis collimator mirror group 3, a volume Bragg grating group 4, a reflector Mirror group 5, diffraction grating 6, focusing mirror 7 and multimode fiber 8.
半导体激光器组1由n个半导体激光器101～10n组成，快轴准直镜组2由n个快轴准直镜201～20n组成，慢轴准直镜组3由n个慢轴准直镜301～30n组成，体布拉格光栅组4由n个体布拉格光栅401～40n组成，反射镜组5由n个反射镜501～50n组成，n为正整数且2≤n≤1000。The semiconductor laser group 1 is composed of n semiconductor lasers 101-10n, the fast-axis collimating mirror group 2 is composed of n fast-axis collimating mirrors 201-20n, and the slow-axis collimating mirror group 3 is composed of n slow-axis collimating mirrors 301 ~30n, volume Bragg grating group 4 is composed of n individual Bragg gratings 401~40n, mirror group 5 is composed of n mirrors 501~50n, n is a positive integer and 2≤n≤1000.
半导体激光器组1前安装快轴准直镜组2，快轴准直镜组2前安装慢轴准直镜组3，慢轴准直镜组3前安装体布拉格光栅组4，体布拉格光栅组4前安装反射镜组5，也就是说：按照上述顺序，n个半导体激光器101～10n、n个快轴准直镜201～20n、n个慢轴准直镜301～30n、n个体布拉格光栅401～40n、n个反射镜501～50n一一对应安装。Fast axis collimator group 2 is installed in front of semiconductor laser group 1, slow axis collimator group 3 is installed in front of fast axis collimator group 2, volume Bragg grating group 4 is installed in front of slow axis collimator group 3, and volume Bragg grating group is installed in front of fast axis collimator group 2 4 Install the mirror group 5 in front, that is to say: according to the above sequence, n semiconductor lasers 101-10n, n fast-axis collimating mirrors 201-20n, n slow-axis collimating mirrors 301-30n, and n individual Bragg gratings 401-40n and n reflecting mirrors 501-50n are installed in one-to-one correspondence.
本实施方式中，n个半导体激光器101～10n可以是单管、线阵或叠阵，n为正整数且2≤n≤1000，即半导体激光器的组数在2组～1000组之间。In this embodiment, the n semiconductor lasers 101-10n can be a single tube, a linear array or a stacked array, n is a positive integer and 2≤n≤1000, that is, the number of groups of semiconductor lasers is between 2 groups and 1000 groups.
本实施方式中，每个半导体激光器的前腔面都镀制上减反射膜，反射率在1％以下。In this embodiment, the front cavity surface of each semiconductor laser is coated with an anti-reflection film, and the reflectivity is below 1%.
本实施方式中，每个体布拉格光栅的反射率都在10％～30％之间，厚度都在1mm～5mm之间，反射带宽都在0.01nm～0.2nm之间，每个体布拉格光栅距离对应的半导体激光器的距离都在1mm～100mm之间，即每个慢轴准直镜距离对应的快轴准直镜的距离都在0.05mm～60mm之间，每个快轴准直镜距离对应的半导体激光器的距离都在0.05mm～5mm之间。In this embodiment, the reflectivity of each volume Bragg grating is between 10% and 30%, the thickness is between 1mm and 5mm, and the reflection bandwidth is between 0.01nm and 0.2nm. The distance corresponding to each volume Bragg grating The distance between semiconductor lasers is between 1mm and 100mm, that is, the distance between each slow-axis collimator and the corresponding fast-axis collimator is between 0.05mm and 60mm, and the distance between each fast-axis collimator and the corresponding semiconductor The distance between the lasers is between 0.05mm and 5mm.
本实施方式中，快轴准直镜组2用于减小激光器块，慢轴准直镜组3用于减小慢轴方向发散角。In this embodiment, the fast-axis collimator group 2 is used to reduce the laser block, and the slow-axis collimator group 3 is used to reduce the divergence angle along the slow axis.
本实施方式中，衍射光栅6可以选用透射型衍射光栅，也可以选用反射型衍射光栅，光栅的线数在1000线/mm～2000线/mm之间。In this embodiment, the diffraction grating 6 can be a transmission type diffraction grating or a reflection type diffraction grating, and the number of lines of the grating is between 1000 lines/mm-2000 lines/mm.
n个半导体激光器101～10n发出n束出射方向相同的组合光束，该组合光束依次通过快轴准直镜组2的减小激光器块作用、慢轴准直镜组3的减小慢轴方向发散角作用后入射至体布拉格光栅组4；体布拉格光栅组4将半导体激光器组1发出的一部分光束按照原路反射回对应的半导体激光器中，实现n个半导体激光器101～10n输出波长的锁定，n个体布拉格光栅401～40n的反射带存在一定的差异，使得n个半导体激光器101～10n锁定后的输出波长也存在波长差；体布拉格光栅组4将半导体激光器组1发出的另一部分光束入射至对应的反射镜中，并通过反射镜组5反射后以不同的入射角入射到衍射光栅6上，光束在衍射光栅6上发生重叠，然后以相同的衍射角衍射，n个半导体激光器101～10n的出射光束合成一束输出，再通过聚焦镜7耦合进多模光纤8中。n semiconductor lasers 101-10n emit n combined light beams with the same outgoing direction, and the combined light beams pass through the fast-axis collimating mirror group 2 to reduce the laser block effect and the slow-axis collimating mirror group 3 to reduce the divergence in the slow-axis direction After the angular action, it is incident on the volume Bragg grating group 4; the volume Bragg grating group 4 reflects a part of the light beam emitted by the semiconductor laser group 1 back to the corresponding semiconductor laser according to the original path, so as to realize the locking of the output wavelengths of n semiconductor lasers 101-10n, n There are certain differences in the reflection bands of the individual Bragg gratings 401-40n, so that the output wavelengths of the n semiconductor lasers 101-10n also have wavelength differences; In the reflector, and after being reflected by the reflector group 5, it is incident on the diffraction grating 6 at different incident angles, the light beams overlap on the diffraction grating 6, and then diffracted at the same diffraction angle, n semiconductor lasers 101-10n The output beams are synthesized into one output beam, and then coupled into the multimode optical fiber 8 through the focusing lens 7 .
具体的说：首先说明半导体激光器101、快轴准直镜201、慢轴准直镜301、体布拉格光栅401、反射镜501这一组：半导体激光器101发出的一束光经过快轴准直镜201的减小激光器块作用，再经过慢轴准直镜301的减小慢轴方向发散角作用，入射至体布拉格光栅401，体布拉格光栅401将一部分入射光按照原路反射回半导体激光器101中，实现半导体激光器101的输出波长锁定；同理，按照上述过程，半导体激光器组1中其他的半导体激光器102～10n的输出波长也被锁定，体布拉格光栅组4将半导体激光器组1发出的另一部分光束入射至对应的反射镜中，并通过反射镜组5反射后以不同的入射角入射到衍射光栅6上，光束在衍射光栅6上发生重叠，然后以相同的衍射角衍射，n个半导体激光器101～10n的出射光束合成一束输出，再通过聚焦镜7耦合进多模光纤8。Specifically: First, the group of semiconductor laser 101, fast-axis collimating mirror 201, slow-axis collimating mirror 301, volume Bragg grating 401, and reflector 501 is explained: a beam of light emitted by semiconductor laser 101 passes through the fast-axis collimating mirror 201 to reduce the laser block effect, and then through the slow axis collimator 301 to reduce the divergence angle in the slow axis direction, it is incident to the volume Bragg grating 401, and the volume Bragg grating 401 reflects a part of the incident light back to the semiconductor laser 101 according to the original path , to realize the output wavelength locking of the semiconductor laser 101; similarly, according to the above process, the output wavelengths of other semiconductor lasers 102-10n in the semiconductor laser group 1 are also locked, and the volume Bragg grating group 4 converts the other part emitted by the semiconductor laser group 1 to The light beam is incident on the corresponding reflector, and is incident on the diffraction grating 6 at different incident angles after being reflected by the reflector group 5. The light beam overlaps on the diffraction grating 6 and then diffracts at the same diffraction angle. The output beams of 101-10n are synthesized into one output beam, and then coupled into the multimode optical fiber 8 through the focusing lens 7 .
以由40组半导体激光器101～1040合束过程，最后聚焦耦合到数值孔径为0.15、芯径为100μm的多模光纤8中为例来说明本发明的一种基于多光栅结构的半导体激光器合束方法，包括以下步骤：Taking the beam combining process of 40 groups of semiconductor lasers 101 to 1040, and finally focusing and coupling to a multimode fiber 8 with a numerical aperture of 0.15 and a core diameter of 100 μm as an example to illustrate a semiconductor laser beam combining based on a multi-grating structure of the present invention method, including the following steps:
步骤一、半导体激光器组1由40个半导体激光器组成，每个半导体激光器由10个半导体激光器单管在垂直方向叠加而成，每个半导体激光器单管在垂直方向的间距为0.8mm，每个半导体激光器单管的输出功率为12W，发光宽度为90μm×2μm，发散角为10°×45°。Step 1. Semiconductor laser group 1 is composed of 40 semiconductor lasers. Each semiconductor laser is formed by superimposing 10 semiconductor laser single tubes in the vertical direction. The vertical spacing of each semiconductor laser single tube is 0.8mm. Each semiconductor laser The output power of a single laser tube is 12W, the luminous width is 90μm×2μm, and the divergence angle is 10°×45°.
40个半导体激光器101～1040发出40束出射方向相同的组合光束分别经过40个快轴准直镜201～2040的减小激光器块作用、40个慢轴准直镜301～3040的减小慢轴方向发散角作用后成为准直光。每个快轴准直镜的焦距均为0.9mm、快轴方向的发散角均为2mrad、光斑尺寸均为8mm；每个慢轴准直镜的焦距均为40mm、慢轴方向的发散角均为2.5mrad、光斑尺寸均为6.8mm，每个半导体激光器的光束质量均为4mm.mrad×4.25mm.mrad，输出功率均为100W。40 semiconductor lasers 101-1040 emit 40 combined light beams with the same exit direction, respectively pass through 40 fast-axis collimating mirrors 201-2040 to reduce the laser block effect, and 40 slow-axis collimating mirrors 301-3040 to reduce the slow-axis After the direction divergence angle is applied, it becomes collimated light. The focal length of each fast-axis collimator is 0.9mm, the divergence angle in the fast-axis direction is 2mrad, and the spot size is 8mm; the focal length of each slow-axis collimator is 40mm, and the divergence angle in the slow-axis direction is The beam quality of each semiconductor laser is 4mm.mrad×4.25mm.mrad, and the output power is 100W.
步骤二、上述准直后的出射光束分别垂直入射至40个体布拉格光栅401～4040上，经过体布拉格光栅组4的反馈，即体布拉格光栅组4将半导体激光器组1发出的一部分光束按照原路反射回对应的半导体激光器中，实现40个半导体激光器101～1040输出波长的锁定。半导体激光器101的中心波长为970nm，光谱线宽为0.1nm，各组相邻的体布拉格光栅中心波长有一个波长差0.5nm，从而使各个半导体激光器的输出波长也存在波长差，40个半导体激光器101～1040分别对应的输出波长为970.5nm、971nm…989.5nm。Step 2. The above-mentioned collimated output beams are vertically incident on 40 volume Bragg gratings 401-4040 respectively, and after the feedback of the volume Bragg grating group 4, the volume Bragg grating group 4 will transmit a part of the beams emitted by the semiconductor laser group 1 according to the original route. Reflected back into the corresponding semiconductor lasers, the output wavelengths of the 40 semiconductor lasers 101-1040 are locked. The central wavelength of the semiconductor laser 101 is 970nm, and the spectral linewidth is 0.1nm. There is a wavelength difference of 0.5nm in the central wavelength of each group of adjacent volume Bragg gratings, so that the output wavelength of each semiconductor laser also has a wavelength difference. 40 semiconductor lasers 101~1040 respectively correspond to output wavelengths of 970.5nm, 971nm...989.5nm.
每个体布拉格光栅的厚度均为3mm、反射率均为15％、中心波长均为970nm、带宽均为0.1nm。Each volume Bragg grating has a thickness of 3 mm, a reflectivity of 15%, a central wavelength of 970 nm, and a bandwidth of 0.1 nm.
步骤三、体布拉格光栅组4将半导体激光器组1发出的另一部分光束入射至对应的反射镜中，并通过各自对应的反射镜反射至衍射光栅6上，衍射光栅6的线数为1850线/mm，以40个半导体激光器101～1040中心波长979.75nm，按照光栅衍射方程mλ＝d(sinθi+sinθd)，式中：m为衍射光栅6的衍射级次，λ为激光器波长，d为衍射光栅6的周期长度，θi为入射角，θd为衍射角；相应的利特罗角(Littrow角)为65°，当衍射角为65°时，每个半导体激光器入射到衍射光栅6对应的入射角根据公式确定，式中：λi为激光器波长，θi为入射角。Step 3: The volume Bragg grating group 4 injects another part of the light beam emitted by the semiconductor laser group 1 into the corresponding mirror, and reflects it to the diffraction grating 6 through the respective corresponding mirrors. The number of lines of the diffraction grating 6 is 1850 lines/ mm, with 40 semiconductor lasers 101~1040 center wavelength 979.75nm, according to the grating diffraction equation mλ=d (sinθi +sinθd ), where m is the diffraction order of the diffraction grating 6, λ is the wavelength of the laser, and d is The period length of the diffraction grating 6, θi is the incident angle, and θd is the diffraction angle; the corresponding Littrow angle (Littrow angle) is 65 °, when the diffraction angle is 65 °, each semiconductor laser is incident on the diffraction grating 6 The corresponding angle of incidence according to the formula Determined, where: λi is the wavelength of the laser, θi is the angle of incidence.
步骤四、上述40个半导体激光器101～1040经过衍射光栅6衍射后的光束质量与单个半导体激光器一致，同样为4mm.mrad×4.25mm.mrad，之后经过一个焦距为32mm的聚焦镜7聚焦，最后耦合进多模光纤8中，输出功率为3500W，对应的光束质量为7.5mm.mrad。Step 4. The beam quality of the above-mentioned 40 semiconductor lasers 101-1040 diffracted by the diffraction grating 6 is consistent with that of a single semiconductor laser, which is also 4mm. Coupled into the multimode fiber 8, the output power is 3500W, and the corresponding beam quality is 7.5mm.mrad.
在基本结构不变的前提下，如果将半导体激光器的组数提高到80组，相应的波长范围变成960nm～999.5nm，可以将输出功率增加到7000W，对应的光束质量仍为7.5mm.mrad。On the premise that the basic structure remains unchanged, if the number of groups of semiconductor lasers is increased to 80 groups, the corresponding wavelength range becomes 960nm~999.5nm, the output power can be increased to 7000W, and the corresponding beam quality is still 7.5mm.mrad .
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| WD01 | Invention patent application deemed withdrawn after publication | Application publication date:20160323 | |
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