A kind of random number generator based on logic gatesTechnical field
The present invention relates to random number generator field, particularly relate to a kind of random number generator based on logic gates.
Background technology
Magnetic RAM (MRAM) is a kind of storer of non-volatile, is made up of dependence circuit interconnective MTJ (MTJ) array.Each MTJ is containing magnetic recording layer and fixed bed.Between recording layer and fixed bed by nonmagnetic tunnel layer separately.When MTJ normally works, the direction of magnetization of recording layer can change, and the direction of magnetization of fixed bed remains unchanged.The resistance of MTJ is relevant with the opposite magnetization direction of recording layer and fixed bed.When the direction of magnetization of recording layer changes relative to the direction of magnetization of fixed bed, the corresponding change of resistance value of MTJ, corresponding to different storage information (as 0 or 1).The amplitude that resistance value changes is called magneto-resistor.
Based in the magnetic RAM (MRAM) of logic gates, Quantum geometrical phase (SOC) effect being deflected through electronics of recording layer realizes.When interior horizontal current is by MTJ heavy metal bottom electrode face to face, the polarization current that electric current produces at the interface of recording layer and heavy metal bottom electrode.When there being biased external magnetic field to deposit in case, if the size of electric current is more than the threshold value of SOC effect, then the direction of magnetization of recording layer is caused to be reversed.The direction that after reversion, the direction of magnetization of recording layer is flowed by write current determines.
Summary of the invention
The present invention overcomes above-mentioned weak point, object is to provide a kind of random number generator based on logic gates, comprise MTJ and heavy metal layer, bias coil can also be added, the probability that parallel (0) or antiparallel (1) that the magnetic field produced by the electric current passed through in bias coil carries out controlling MTJ occurs; The present invention can be used for realizing producing random code.
The present invention achieves the above object by the following technical programs: a kind of random number generator based on logic gates, comprises MTJ, produces the heavy metal layer of logic gates; MTJ is connected to above or below heavy metal layer.
As preferably, described random number generator also comprises offset guide line or bias coil, is located at MTJ both sides or upper and lower.
As preferably, described MTJ comprises vertical fixed bed I, coupling layer, vertical fixed bed II, tunnel layer, perpendicular recording layer; If MTJ is connected in above heavy metal layer, then perpendicular recording layer, tunnel layer, vertical fixed bed II, coupling layer, vertical fixed bed I stack gradually connection from bottom to top; If MTJ is connected in below heavy metal layer, then vertical fixed bed II, coupling layer, vertical fixed bed I, tunnel layer, perpendicular recording layer stack gradually connection from bottom to top.
As preferably, the direction of magnetization of described vertical fixed bed I, vertical fixed bed II, perpendicular recording layer is in rete or perpendicular to rete.
As preferably, described vertical fixed bed I, II form SAF structure together with coupling layer; SAF structure is made up of two-layer magnetic material and anti-ferromagnetic coupling layers; Two-layer magnetic material is coupled anti-ferromagnetically layer separately, and is realized the reversed arrangement of direction of magnetization by the Interaction between layers of anti-ferromagnetic coupling layers.
As preferably, perpendicular recording layer also can be made up of SAF structure.
As preferably, described tunnel layer comprises one or more layers insulation course, and its material contains magnesium oxide, aluminium oxide, magnesium aluminium oxide (MgAl2o4), tantalum oxide, titanium dioxide, gadolinium oxide, hafnia, zirconia, gallium oxide, scandium oxide, vanadium oxide, zinc paste, magnesium zinc oxide, iron oxide, cobalt oxide, nickel oxide, boron nitride or aluminium nitride.
As preferably, the material of described vertical fixed bed I, vertical fixed bed II, perpendicular recording layer contains iron, cobalt, nickel, ferrocobalt, and the alloy that above-mentioned element or alloy and boron, platinum, palladium, zirconium, hafnium, tantalum, titanium, vanadium, chromium, tungsten, molybdenum, niobium form, and the one or more combination of multilayer film that above-mentioned element or alloy and boron, zirconium, hafnium, tantalum, titanium, vanadium, chromium, tungsten, molybdenum, niobium form.
As preferably, the material of the heavy metal layer of described generation logic gates contains platinum, palladium, tantalum or tungsten.
As preferably, if be connected with multiple MTJ above or below described heavy metal layer, then form multidigit random number generator.
As preferably, the material of described anti-ferromagnetic coupling layers contains ruthenium, rhodium, rhenium, iridium, copper, silver, gold, and comprises the alloy of above-mentioned material.
Beneficial effect of the present invention is: random number generator of the present invention can be used for producing random cipher, can be applied to the occasion that communication, finance, business etc. need password, have very large application prospect.
Accompanying drawing explanation
Fig. 1 is structural representation Fig. 1 of random number generator of the present invention;
Fig. 2 is structural representation Fig. 2 of random number generator of the present invention;
Fig. 3 is structural representation Fig. 3 of random number generator of the present invention;
Fig. 4 is structural representation Fig. 4 of random number generator of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described further, but protection scope of the present invention is not limited in this:
Embodiment 1: as shown in Figure 1, a kind of random number generator based on logic gates is made up of the heavy metal layer 2 of MTJ 1, generation logic gates; MTJ 1 is connected to above heavy metal layer.Wherein, MTJ 1 contains ferromagnetic vertical fixed bed I101, vertical fixed bed II103, anti-ferromagnetic coupling layers 102, nonmagnetic tunnel layer 104, perpendicular recording layer 105.The direction of magnetization of vertical fixed bed I101, vertical fixed bed II103 and perpendicular recording layer 105 may be in rete face, also may be perpendicular to face.Vertical fixed bed I101, vertical fixed bed II103 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, europium, gadolinium, terbium, samarium, dysprosium, holmium, platinum, palladium, manganese, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and the alloy be made up of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Tunnel layer 104 may be made up of one or more layers insulation course.
Vertical fixed bed I101, II103 form SAF structure together with coupling layer 102; Coupling layer 102 is anti-ferromagnetic coupling layers; Perpendicular recording layer 105 also may containing synthetic anti-ferromagnetic coupling (SAF) structure.SAF structure is made up of two-layer magnetic material.Two-layer magnetic material is coupled anti-ferromagnetically layer separately, and is realized the reversed arrangement of direction of magnetization by the Interaction between layers of anti-ferromagnetic coupling layers.Anti-ferromagnetic coupling layers in SAF may comprise but be not limited only to following material: ruthenium, rhodium, rhenium, iridium, copper, silver, gold etc. and comprise the alloy of above-mentioned material.Tunnel layer 104 may comprise but be not limited only to following material: magnesium oxide, aluminium oxide, magnesium aluminium oxide (MgAl2o4), tantalum oxide, titanium dioxide, gadolinium oxide, hafnia, zirconia, gallium oxide, scandium oxide, vanadium oxide, zinc paste, magnesium zinc oxide, iron oxide, cobalt oxide, nickel oxide, boron nitride or aluminium nitride etc.Perpendicular recording layer 105 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, platinum, palladium, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and comprise the alloy of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Heavy metal layer 106 may comprise but be not limited only to following material: platinum, palladium, tantalum or tungsten etc.
Horizontal current in heavy metal layer produces logic gates, makes the direction of magnetization of recording layer swing to horizontal direction from vertical direction; The direction of magnetization of close current then recording layer recovers vertical direction but parallel with the direction of magnetization of fixed bed (0) or antiparallel (1), and occurrence probability is 50/50; Signal is exported and is then realized by the resistance measuring MTJ.
Embodiment 2: as shown in Figure 2, a kind of random number generator based on logic gates is made up of MTJ 1, the heavy metal layer 2 producing logic gates, offset guide line 3; MTJ 1 is connected to above heavy metal layer, and offset guide line 3 is located at the right side of MTJ 1.Wherein, MTJ 1 contains ferromagnetic vertical fixed bed I101, vertical fixed bed II103, anti-ferromagnetic coupling layers 102, nonmagnetic tunnel layer 104, perpendicular recording layer 105.The direction of magnetization of vertical fixed bed I101, vertical fixed bed II103 and perpendicular recording layer 105 may be in rete face, also may be perpendicular to face.Vertical fixed bed I101, vertical fixed bed II103 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, europium, gadolinium, terbium, samarium, dysprosium, holmium, platinum, palladium, manganese, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and the alloy be made up of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Tunnel layer 104 may be made up of one or more layers insulation course.
Vertical fixed bed I101, II103 form SAF structure together with coupling layer 102, and coupling layer 102 is anti-ferromagnetic coupling layers; Perpendicular recording layer 105 also may containing synthetic anti-ferromagnetic coupling (SAF) structure.SAF structure is made up of two-layer magnetic material.Two-layer magnetic material is coupled anti-ferromagnetically layer separately, and is realized the reversed arrangement of direction of magnetization by the Interaction between layers of anti-ferromagnetic coupling layers.Anti-ferromagnetic coupling layers in SAF may comprise but be not limited only to following material: ruthenium, rhodium, rhenium, iridium, copper, silver, gold etc. and comprise the alloy of above-mentioned material.Tunnel layer 104 may comprise but be not limited only to following material: magnesium oxide, aluminium oxide, magnesium aluminium oxide (MgAl2o4), tantalum oxide, titanium dioxide, gadolinium oxide, hafnia, zirconia, gallium oxide, scandium oxide, vanadium oxide, zinc paste, magnesium zinc oxide, iron oxide, cobalt oxide, nickel oxide, boron nitride or aluminium nitride etc.Perpendicular recording layer 105 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, platinum, palladium, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and comprise the alloy of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Heavy metal layer 2 may comprise but be not limited only to following material: platinum, palladium, tantalum or tungsten etc.
In ablation process, recording layer direction of magnetization can only be changed into horizontal direction from vertical direction by SOC effect, the direction of magnetization of close current then recording layer recovers vertical direction but parallel with the direction of magnetization of fixed bed (0) or antiparallel (1), and occurrence probability is 50/50; After adding offset guide line 3, the probability that parallel (0) or antiparallel (1) of MTJ occurs can be controlled by the magnetic field of the electric current generation passed through in offset guide line 3.
Embodiment 3: as shown in Figure 3, a kind of random number generator based on logic gates is made up of MTJ 1, the heavy metal layer 2 producing logic gates, bias coil 4; MTJ 1 is connected to above heavy metal layer, and bias coil 4 is located at the top of MTJ 1.Wherein, MTJ 1 contains ferromagnetic vertical fixed bed I101, vertical fixed bed II103, anti-ferromagnetic coupling layers 102, nonmagnetic tunnel layer 104, perpendicular recording layer 105.The direction of magnetization of vertical fixed bed I101, vertical fixed bed II103 and perpendicular recording layer 105 may be in rete face, also may be perpendicular to face.Vertical fixed bed I101, vertical fixed bed II103 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, europium, gadolinium, terbium, samarium, dysprosium, holmium, platinum, palladium, manganese, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and the alloy be made up of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Tunnel layer 104 may be made up of one or more layers insulation course.
Vertical fixed bed I101, II103 form SAF structure together with coupling layer 102; Perpendicular recording layer 105 also may containing synthetic anti-ferromagnetic coupling (SAF) structure.SAF structure is made up of two-layer magnetic material.Two-layer magnetic material is coupled anti-ferromagnetically layer separately, and is realized the reversed arrangement of direction of magnetization by the Interaction between layers of anti-ferromagnetic coupling layers.Anti-ferromagnetic coupling layers in SAF may comprise but be not limited only to following material: ruthenium, rhodium, rhenium, iridium, copper, silver, gold etc. and comprise the alloy of above-mentioned material.Tunnel layer 104 may comprise but be not limited only to following material: magnesium oxide, aluminium oxide, magnesium aluminium oxide (MgAl2o4), tantalum oxide, titanium dioxide, gadolinium oxide, hafnia, zirconia, gallium oxide, scandium oxide, vanadium oxide, zinc paste, magnesium zinc oxide, iron oxide, cobalt oxide, nickel oxide, boron nitride or aluminium nitride etc.Perpendicular recording layer 105 may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, platinum, palladium, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and comprise the alloy of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Heavy metal layer 2 may comprise but be not limited only to following material: platinum, palladium, tantalum or tungsten etc.
In ablation process, recording layer direction of magnetization can only be changed into horizontal direction from vertical direction by SOC effect, the direction of magnetization of close current then recording layer recovers vertical direction but parallel with the direction of magnetization of fixed bed (0) or antiparallel (1), and occurrence probability is 50/50; After adding bias coil 4, the probability that parallel (0) or antiparallel (1) of MTJ occurs can be controlled by the magnetic field of the electric current generation passed through in bias coil 4.
Embodiment 4: as shown in Figure 4, a kind of random number generator based on logic gates is made up of multiple MTJ 1, the heavy metal layer 2 producing logic gates, bias coil 4; Multiple MTJ 1 is located at above heavy metal layer successively, and bias coil 4 is covered in the top of MTJ 1.Wherein, MTJ 1 contains ferromagnetic vertical fixed bed I, vertical fixed bed II, anti-ferromagnetic coupling layers, nonmagnetic tunnel layer, perpendicular recording layer.Multiple MTJ 1 forms multidigit random code storer.
The direction of magnetization of vertical fixed bed I, vertical fixed bed II and perpendicular recording layer may be in rete face, also may be perpendicular to face.Vertical fixed bed I, vertical fixed bed II may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, europium, gadolinium, terbium, samarium, dysprosium, holmium, platinum, palladium, manganese, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and the alloy be made up of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Tunnel layer may be made up of one or more layers insulation course.Vertical fixed bed I, II form SAF structure together with coupling layer, and coupling layer is anti-ferromagnetic coupling layers; Perpendicular recording layer also may containing synthetic anti-ferromagnetic coupling (SAF) structure.SAF structure is made up of two-layer magnetic material.Two-layer magnetic material is coupled anti-ferromagnetically layer separately, and is realized the reversed arrangement of direction of magnetization by the Interaction between layers of anti-ferromagnetic coupling layers.Anti-ferromagnetic coupling layers in SAF may comprise but be not limited only to following material: ruthenium, rhodium, rhenium, iridium, copper, silver, gold etc. and comprise the alloy of above-mentioned material.Tunnel layer may comprise but be not limited only to following material: magnesium oxide, aluminium oxide, magnesium aluminium oxide (MgAl2o4), tantalum oxide, titanium dioxide, gadolinium oxide, hafnia, zirconia, gallium oxide, scandium oxide, vanadium oxide, zinc paste, magnesium zinc oxide, iron oxide, cobalt oxide, nickel oxide, boron nitride or aluminium nitride etc.Perpendicular recording layer may comprise but be not limited only to following materials and structures: cobalt, iron, nickel, platinum, palladium, boron, hafnium, zirconium, tantalum, niobium, vanadium, titanium, molybdenum, chromium, tungsten etc. and comprise the alloy of above-mentioned element, and the multi-layer film structure be made up of above-mentioned element and alloy.Heavy metal layer 2 may comprise but be not limited only to following material: platinum, palladium, tantalum or tungsten etc.
In ablation process, recording layer direction of magnetization can only be changed into horizontal direction from vertical direction by SOC effect, the direction of magnetization of close current then recording layer recovers vertical direction but parallel with the direction of magnetization of fixed bed (0) or antiparallel (1), and occurrence probability is 50/50; After adding bias coil 4, the probability that parallel (0) or antiparallel (1) of multiple MTJ 1 occurs can be controlled by the magnetic field of the electric current generation passed through in bias coil 4.
The know-why being specific embodiments of the invention and using described in above, if the change done according to conception of the present invention, its function produced do not exceed that instructions and accompanying drawing contain yet spiritual time, must protection scope of the present invention be belonged to.