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CN105336734A - LED vertical packaging structure - Google Patents

LED vertical packaging structure
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Publication number
CN105336734A
CN105336734ACN201510679635.3ACN201510679635ACN105336734ACN 105336734 ACN105336734 ACN 105336734ACN 201510679635 ACN201510679635 ACN 201510679635ACN 105336734 ACN105336734 ACN 105336734A
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substrate
vertical
conductive layer
led
electrode
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郭伟杰
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Leedarson Lighting Co Ltd
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Leedarson Lighting Co Ltd
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Abstract

A vertical LED packaging structure comprises a vertical LED chip, a first substrate, a second substrate, a first electrode and a second electrode, wherein the vertical LED chip is arranged between the first substrate and the second substrate, the vertical LED packaging structure further comprises a first conducting layer and a second conducting layer, the first conducting layer is arranged on the first substrate and is electrically connected with the first electrode, the second conducting layer is arranged on the second substrate and is electrically connected with the second electrode, the vertical LED chip is provided with a top electrode and a bottom electrode, the top electrode is electrically connected with the first conducting layer, and the bottom electrode is electrically connected with the second conducting layer. The LED vertical packaging structure has the advantage of simple structure.

Description

Translated fromChinese
LED垂直封装结构LED vertical packaging structure

技术领域technical field

本发明涉及照明领域,特别是一种LED垂直封装结构。The invention relates to the lighting field, in particular to an LED vertical packaging structure.

背景技术Background technique

LED灯丝能实现360°全角度发光,而无需加装透镜之类的光学器件,可应用与水晶吊灯、壁灯、蜡烛灯等照明产品上,带来前所未有的体验。The LED filament can emit light at all angles of 360° without adding optical devices such as lenses. It can be applied to lighting products such as crystal chandeliers, wall lamps, and candle lamps, bringing an unprecedented experience.

现有的LED灯丝采用玻璃基板或蓝宝石基板,在表面固定多颗LED芯片,之后,利用含有荧光粉的封装体封装设置在基板上的LED芯片。工作时,LED芯片发出的光激发荧光粉,混合后发出白光。但是,由于荧光粉一般采用稀土材料制成,如常见的YAG粉等,其原材料价格较高;而且封装工艺较复杂,更进一步推高了LED灯丝的制造成本。另外,荧光粉必须包覆封装体整个外表面,否则会有蓝光漏出的问题。而荧光粉的包覆工艺复杂、效率低,造成成本大幅增加。还有,现有的LED灯丝封装方案,当芯片为正装芯片时芯片之间金线连接,当芯片为倒装芯片时通过基板上布的线路连接。芯片焊接生产效率低,良率低;基板布线有会占据相当一部分的基板面积,造成光吸收,封装出光效率降低。Existing LED filaments use a glass substrate or a sapphire substrate, on which a plurality of LED chips are fixed, and then the LED chips disposed on the substrate are packaged with a package containing phosphor powder. When working, the light emitted by the LED chip excites the phosphor powder, which emits white light after mixing. However, since phosphors are generally made of rare earth materials, such as common YAG powder, etc., the price of raw materials is relatively high; and the packaging process is relatively complicated, which further pushes up the manufacturing cost of LED filaments. In addition, the phosphor powder must cover the entire outer surface of the package, otherwise there will be a problem of blue light leakage. However, the phosphor coating process is complex and inefficient, resulting in a substantial increase in cost. In addition, in the existing LED filament packaging scheme, when the chips are front-mounted chips, the chips are connected with gold wires, and when the chips are flip-chips, they are connected through the wiring on the substrate. The production efficiency of chip welding is low, and the yield rate is low; the substrate wiring will occupy a considerable part of the substrate area, causing light absorption and reducing the light output efficiency of the package.

发明内容Contents of the invention

有鉴于此,有必要提供一种结构简单的LED垂直封装结构。In view of this, it is necessary to provide a vertical LED packaging structure with a simple structure.

一种LED垂直封装结构,包括垂直LED芯片、第一基板及第二基板、第一电极及第二电极,该垂直LED芯片设置在该第一基板及第二基板之间,还包括第一导电层及第二导电层,该第一导电层设置在该第一基板上且与该第一电极电连接,该第二导电层设置在该第二基板上且与该第二电极电连接,该垂直LED芯片设有顶部电极及底部电极,该顶部电极与该第一导电层电连接,该底部电极与该第二导电层电连接。A LED vertical packaging structure, including a vertical LED chip, a first substrate and a second substrate, a first electrode and a second electrode, the vertical LED chip is arranged between the first substrate and the second substrate, and also includes a first conductive layer and a second conductive layer, the first conductive layer is disposed on the first substrate and electrically connected to the first electrode, the second conductive layer is disposed on the second substrate and electrically connected to the second electrode, the The vertical LED chip is provided with a top electrode and a bottom electrode, the top electrode is electrically connected to the first conductive layer, and the bottom electrode is electrically connected to the second conductive layer.

进一步地,所述第一导电层及该第一基板均为透明或半透明材料制成。Further, both the first conductive layer and the first substrate are made of transparent or translucent materials.

进一步地,所述第二导电层及该第二基板均为透明或半透明材料制成。Further, both the second conductive layer and the second substrate are made of transparent or translucent materials.

与现有技术相比,本发明LED垂直封装结构通过设置垂直LED芯片、第一基板及第二基板、第一电极及第二电极,利用第一电极、第二电极经过第一导电层与第二导电层对该垂直LED芯片电连接,并将垂直LED芯片夹持在该第一基板及第二基板之间。由于第一基板及第二基板可以对垂直LED芯片提供保护,并使垂直LED芯片与外界绝缘,这就省去了现有技术中所需要的封装层,以及现有技术中实现芯片之间电连接的打金线或焊接芯片的步骤,使得该LED垂直封装结构具有结构简单的优点。Compared with the prior art, the LED vertical package structure of the present invention is provided with vertical LED chips, the first substrate and the second substrate, the first electrode and the second electrode, and utilizes the first electrode and the second electrode to pass through the first conductive layer and the second electrode. The two conductive layers are electrically connected to the vertical LED chip, and clamp the vertical LED chip between the first substrate and the second substrate. Since the first substrate and the second substrate can provide protection for the vertical LED chip and insulate the vertical LED chip from the outside world, this saves the packaging layer required in the prior art, and realizes the electrical connection between the chips in the prior art. The steps of bonding gold wires or welding chips make the LED vertical packaging structure have the advantage of simple structure.

附图说明Description of drawings

图1是所示LED垂直封装结构的横截剖面示意图。FIG. 1 is a schematic cross-sectional view of the vertical packaging structure of the LED shown.

附图标记说明:Explanation of reference signs:

10第一基板50第一导电极10 first substrate 50 first conductive electrode

20第二基板60第二导电极20 second substrate 60 second conductive electrode

30第一导电层70垂直LED芯片30 first conductive layer 70 vertical LED chips

40第二导电层80光学胶40 second conductive layer 80 optical glue

具体实施方式detailed description

下面结合附图与具体实施方式对本发明作进一步详细描述。The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

图1是本发明第一实施例的LED垂直封装结构结构的剖面示意图,该LED垂直封装结构100包括第一基板10、第二基板20、第一导电层30、第二导电层40、第一电极50、第二电极60、多个垂直芯片70及光学胶80。整体上,该第一导电层30、第二导电层40、第一电极50、第二电极60、多个垂直芯片70及光学胶80均设置在该第一基板10与第二基板20之间,并通过光学胶80和导电胶(图未示)对上述各部件之间进行连接从而形成该LED垂直封装结构100。1 is a schematic cross-sectional view of a LED vertical packaging structure according to a first embodiment of the present invention. The LED vertical packaging structure 100 includes a first substrate 10, a second substrate 20, a first conductive layer 30, a second conductive layer 40, a first An electrode 50 , a second electrode 60 , a plurality of vertical chips 70 and an optical glue 80 . Overall, the first conductive layer 30 , the second conductive layer 40 , the first electrode 50 , the second electrode 60 , a plurality of vertical chips 70 and optical glue 80 are all arranged between the first substrate 10 and the second substrate 20 , and connect the above-mentioned components through optical glue 80 and conductive glue (not shown in the figure) to form the LED vertical packaging structure 100 .

请参照图1,该LED垂直封装结构整体形成长条形LED灯丝结构,以实现4π大角度发光。该第一基板10及该第二基板20均为长条形结构,可以是任何无机物或有机物材质的绝缘基板,例如玻璃、碳化硅、蓝宝石、透明陶瓷、PET、PC等等。当然,由于要实现4π发光,该第一基板10与第二基板20应当由透明或半透明材料制成。该第一基板10和第二基板20用于支撑及包裹该LED垂直封装结构100的其他部件。Please refer to FIG. 1 , the vertical packaging structure of the LED forms a long LED filament structure as a whole, so as to realize 4π large-angle light emission. Both the first substrate 10 and the second substrate 20 are strip-shaped, and can be insulating substrates made of any inorganic or organic material, such as glass, silicon carbide, sapphire, transparent ceramics, PET, PC and so on. Of course, to achieve 4π light emission, the first substrate 10 and the second substrate 20 should be made of transparent or translucent materials. The first substrate 10 and the second substrate 20 are used to support and wrap other components of the LED vertical packaging structure 100 .

请参照图1,该第一导电层30及该第二导电层40由导电及导热材料制成,以便将该垂直LED芯片70产生的热量传递到该第一基板10或第二基板20或外部。优选地,该第一导电层30及该第二导电层40由石墨烯或ITO制成;石墨烯可以是单层石墨烯或者多层石墨烯。由石墨烯制成的导电层有很高的电导率,可作为导电通道。同时,石墨烯层有高达97.7%的透光率,能够让光线有效出射,提高出光效率。该第一导电层30覆盖在该第一基板10上,该第二导电层40覆盖在该第二基板20上。Please refer to FIG. 1, the first conductive layer 30 and the second conductive layer 40 are made of conductive and thermally conductive materials, so as to transfer the heat generated by the vertical LED chip 70 to the first substrate 10 or the second substrate 20 or outside . Preferably, the first conductive layer 30 and the second conductive layer 40 are made of graphene or ITO; graphene can be single-layer graphene or multi-layer graphene. Conductive layers made of graphene have high electrical conductivity and act as conductive pathways. At the same time, the graphene layer has a light transmittance as high as 97.7%, which can allow light to exit effectively and improve light extraction efficiency. The first conductive layer 30 covers the first substrate 10 , and the second conductive layer 40 covers the second substrate 20 .

请参照图1,该第一电极50及该第二电极60由导电且导热金属材料制成,该第一电极50与该第一导电层30热连接,该第二电极60与该第二导电层40热连接。外部电源(图未示)通过该第一电极50及该第二电极60向所述垂直LED芯片70供电。Please refer to FIG. 1, the first electrode 50 and the second electrode 60 are made of conductive and thermally conductive metal material, the first electrode 50 is thermally connected to the first conductive layer 30, the second electrode 60 is connected to the second conductive layer Layer 40 is thermally connected. An external power source (not shown) supplies power to the vertical LED chip 70 through the first electrode 50 and the second electrode 60 .

请参照图1,所述垂直LED芯片70设有顶部电极(图未示)及底部电极(图未示),该顶部电极与该第一导电层30通过导电胶实现电连接,该底部电极与该第二导电层40通过导电胶实现电连接。该第一基板10与该第二基板20均为长条形结构,所述垂直LED芯片70相互平行间隔设置在该第一基板10与该第二基板20之间,所述垂直LED芯片70分别与该第一导电层30及该第二导电层40电连接,使得这些垂直LED芯片70相互并联连接,该第一基板10、第二基板20及所述垂直LED芯片70组成灯丝结构。所述垂直LED芯片70为发出白光的纳米LED芯片。Please refer to FIG. 1 , the vertical LED chip 70 is provided with a top electrode (not shown) and a bottom electrode (not shown), the top electrode is electrically connected to the first conductive layer 30 through conductive glue, and the bottom electrode is electrically connected to the first conductive layer 30. The second conductive layer 40 is electrically connected through conductive glue. The first substrate 10 and the second substrate 20 are elongated structures, and the vertical LED chips 70 are arranged between the first substrate 10 and the second substrate 20 in parallel with each other, and the vertical LED chips 70 are respectively It is electrically connected with the first conductive layer 30 and the second conductive layer 40, so that the vertical LED chips 70 are connected in parallel, and the first substrate 10, the second substrate 20 and the vertical LED chips 70 form a filament structure. The vertical LED chip 70 is a nano-LED chip that emits white light.

请参照图1,该光学胶80是高透光率的胶,设置在该第一基板10与该第二基板20之间以封装该垂直LED芯片70。该光学胶80的折射率对应这些垂直LED芯片70设置,可以用于提高这些垂直LED芯片70的出光效率。Please refer to FIG. 1 , the optical adhesive 80 is an adhesive with high light transmittance, and is disposed between the first substrate 10 and the second substrate 20 to encapsulate the vertical LED chip 70 . The refractive index of the optical glue 80 is set corresponding to the vertical LED chips 70 and can be used to improve the light extraction efficiency of the vertical LED chips 70 .

综上所述,本发明LED垂直封装结构100通过设置垂直LED芯片、第一基板及第二基板、第一电极及第二电极,利用第一电极、第二电极经过第一导电层与第二导电层对该垂直LED芯片电连接,并将垂直LED芯片夹持在该第一基板及第二基板之间。由于第一基板及第二基板可以对垂直LED芯片提供保护,并使垂直LED芯片与外界绝缘,这就省去了现有技术中所需要的封装层,以及现有技术中实现芯片之间电连接的打金线或焊接芯片的步骤,使得该LED垂直封装结构具有结构简单的优点。由于该垂直LED芯片70本身为发白光的纳米LED芯片,这就使得该LED垂直封装结构100可以不必使用荧光粉而直接发出白光。这就有效地降低了该LED垂直封装结构100的成本。同时,石墨烯层或ITO氧化铟锡层不但能透光,而且能导电导热,它们的使用将有效提升该LED垂直封装结构的出光效率、散热能力以及简化结构。特别是,当这些垂直LED芯片70的数量为多个时,该第一导电层与第二导电层可以分别设置为连续的片层结构,通过并联方式极大地简化了电连接。另外,该LED垂直封装结构100不但能做成LED灯丝,而且能做成LED面板灯,只需要将多个垂直LED芯片10安装类似矩阵的方式排列在该第一基板与第二基板之间即可实现面光源发光的效果。To sum up, the LED vertical packaging structure 100 of the present invention is provided with a vertical LED chip, a first substrate and a second substrate, a first electrode and a second electrode, and utilizes the first electrode and the second electrode to pass through the first conductive layer and the second electrode. The conductive layer is electrically connected to the vertical LED chip, and clamps the vertical LED chip between the first substrate and the second substrate. Since the first substrate and the second substrate can provide protection for the vertical LED chip and insulate the vertical LED chip from the outside world, this saves the packaging layer required in the prior art, and realizes the electrical connection between the chips in the prior art. The steps of bonding gold wires or welding chips make the LED vertical packaging structure have the advantage of simple structure. Since the vertical LED chip 70 itself is a nano-LED chip that emits white light, the LED vertical packaging structure 100 can directly emit white light without using phosphor powder. This effectively reduces the cost of the LED vertical packaging structure 100 . At the same time, the graphene layer or the ITO indium tin oxide layer can not only transmit light, but also conduct electricity and heat. Their use will effectively improve the light extraction efficiency, heat dissipation capacity and simplify the structure of the LED vertical packaging structure. In particular, when the number of these vertical LED chips 70 is multiple, the first conductive layer and the second conductive layer can respectively be arranged in a continuous sheet structure, which greatly simplifies the electrical connection through parallel connection. In addition, the LED vertical packaging structure 100 can not only be made into an LED filament, but also can be made into an LED panel light. It only needs to arrange a plurality of vertical LED chips 10 between the first substrate and the second substrate in a matrix-like manner. The effect of surface light source can be realized.

Claims (10)

Translated fromChinese
1.一种LED垂直封装结构,包括垂直LED芯片、第一基板及第二基板、第一电极及第二电极,该垂直LED芯片设置在该第一基板及第二基板之间,其特征在于,还包括第一导电层及第二导电层,该第一导电层设置在该第一基板上且与该第一电极电连接,该第二导电层设置在该第二基板上且与该第二电极电连接,该垂直LED芯片设有顶部电极及底部电极,该顶部电极与该第一导电层电连接,该底部电极与该第二导电层电连接。1. A LED vertical packaging structure, comprising a vertical LED chip, a first substrate and a second substrate, a first electrode and a second electrode, the vertical LED chip is arranged between the first substrate and the second substrate, characterized in that , further comprising a first conductive layer and a second conductive layer, the first conductive layer is disposed on the first substrate and is electrically connected to the first electrode, the second conductive layer is disposed on the second substrate and is connected to the first electrode The two electrodes are electrically connected, the vertical LED chip is provided with a top electrode and a bottom electrode, the top electrode is electrically connected to the first conductive layer, and the bottom electrode is electrically connected to the second conductive layer.2.根据权利要求1所述的LED垂直封装结构,其特征在于:该第一导电层及该第一基板均为透明或半透明材料制成。2. The LED vertical packaging structure according to claim 1, wherein the first conductive layer and the first substrate are made of transparent or translucent materials.3.根据权利要求1所述的LED垂直封装结构,其特征在于:该第二导电层及该第二基板均为透明或半透明材料制成。3. The LED vertical packaging structure according to claim 1, wherein the second conductive layer and the second substrate are made of transparent or translucent materials.4.根据权利要求2所述的LED垂直封装结构,其特征在于:该第一导电层由导热材料制成,以便将该垂直LED芯片产生的热量传递到该第一基板或外部。4. The LED vertical packaging structure according to claim 2, wherein the first conductive layer is made of heat-conducting material so as to transfer the heat generated by the vertical LED chip to the first substrate or outside.5.根据权利要求2所述的LED垂直封装结构,其特征在于:该第一导电层由石墨烯或ITO制成。5. The LED vertical packaging structure according to claim 2, wherein the first conductive layer is made of graphene or ITO.6.根据权利要求1所述的LED垂直封装结构,其特征在于:该顶部电极与该第一导电层之间,以及该底部电极与该第二导电层之间通过一层导电胶实现电连接。6. The LED vertical package structure according to claim 1, characterized in that: between the top electrode and the first conductive layer, and between the bottom electrode and the second conductive layer are electrically connected through a layer of conductive glue .7.根据权利要求1所述的LED垂直封装结构,其特征在于,还包括光学胶,该光学胶设置在该第一基板与该第二基板之间以封装该垂直LED芯片。7 . The LED vertical package structure according to claim 1 , further comprising an optical glue disposed between the first substrate and the second substrate to package the vertical LED chip.8.根据权利要求4所述的LED垂直封装结构,其特征在于:该第一电极由导电且导热金属材料制成,该第一电极与该第一导电层热连接。8 . The LED vertical package structure according to claim 4 , wherein the first electrode is made of conductive and thermally conductive metal material, and the first electrode is thermally connected to the first conductive layer.9.根据权利要求1所述的LED垂直封装结构,其特征在于:包括多个垂直LED芯片,该第一基板与该第二基板均为长条形结构,所述垂直LED芯片相互平行间隔设置在该第一基板与该第二基板之间,所述垂直LED芯片分别与该第一导电层及该第二导电层电连接使得这些垂直LED芯片相互并联连接,该第一基板、第二基板及所述垂直LED芯片组成灯丝结构。9. The LED vertical packaging structure according to claim 1, characterized in that: it comprises a plurality of vertical LED chips, the first substrate and the second substrate are elongated structures, and the vertical LED chips are arranged parallel to each other at intervals Between the first substrate and the second substrate, the vertical LED chips are respectively electrically connected to the first conductive layer and the second conductive layer so that these vertical LED chips are connected in parallel with each other, the first substrate, the second substrate and the vertical LED chips form a filament structure.10.根据权利要求1所述的LED垂直封装结构,其特征在于:该垂直LED芯片为发出白光的纳米LED芯片。10. The LED vertical package structure according to claim 1, wherein the vertical LED chip is a nano-LED chip emitting white light.
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CN105845813A (en)*2016-04-252016-08-10陈海英LED light-emitting device and LED light source
CN106024769A (en)*2016-07-172016-10-12王培培Semiconductor lighting device
CN106382609A (en)*2016-10-182017-02-08南昌大学LED lamp filament strip
CN106968391A (en)*2016-10-272017-07-21厦门腾月光电科技有限公司Luminous building materials
CN107634136A (en)*2017-08-222018-01-26广东欧曼科技股份有限公司 A dewdrop-shaped soft light bar
CN107785355A (en)*2016-08-262018-03-09中国科学院金属研究所Transparent flexible GaN nanometer stick array LED devices and preparation method thereof
CN107785466A (en)*2016-08-262018-03-09中国科学院金属研究所A kind of transparency LED based on Graphene electrodes and preparation method thereof
CN108389953A (en)*2018-03-052018-08-10董秀玲A kind of LED light emitting device and its manufacturing method
EP3462489A1 (en)*2017-09-292019-04-03Facebook Technologies, LLCMesa shaped micro light emitting diode with bottom n-contact
US10418510B1 (en)2017-12-222019-09-17Facebook Technologies, LlcMesa shaped micro light emitting diode with electroless plated N-contact
CN110323312A (en)*2019-06-192019-10-11武汉理工大学A kind of inorganic flexible optoelectronic device structure and preparation method thereof
CN110793562A (en)*2019-11-072020-02-14山东浪潮人工智能研究院有限公司 A detector module packaging structure and method for diamond sensor testing

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CN103210490A (en)*2010-08-272013-07-17夸克星有限责任公司Solid state light sheet or strip for general illumination
CN205069637U (en)*2015-10-192016-03-02漳州立达信光电子科技有限公司 LED vertical packaging structure

Cited By (15)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN105845813A (en)*2016-04-252016-08-10陈海英LED light-emitting device and LED light source
CN105845813B (en)*2016-04-252018-10-26陈海英L ED luminescent device and L ED light source
CN106024769A (en)*2016-07-172016-10-12王培培Semiconductor lighting device
CN106024769B (en)*2016-07-172018-10-02管伟 A semiconductor lighting device
CN107785466A (en)*2016-08-262018-03-09中国科学院金属研究所A kind of transparency LED based on Graphene electrodes and preparation method thereof
CN107785355A (en)*2016-08-262018-03-09中国科学院金属研究所Transparent flexible GaN nanometer stick array LED devices and preparation method thereof
CN106382609A (en)*2016-10-182017-02-08南昌大学LED lamp filament strip
CN106968391A (en)*2016-10-272017-07-21厦门腾月光电科技有限公司Luminous building materials
CN107634136A (en)*2017-08-222018-01-26广东欧曼科技股份有限公司 A dewdrop-shaped soft light bar
EP3462489A1 (en)*2017-09-292019-04-03Facebook Technologies, LLCMesa shaped micro light emitting diode with bottom n-contact
US10418510B1 (en)2017-12-222019-09-17Facebook Technologies, LlcMesa shaped micro light emitting diode with electroless plated N-contact
CN108389953A (en)*2018-03-052018-08-10董秀玲A kind of LED light emitting device and its manufacturing method
CN110323312A (en)*2019-06-192019-10-11武汉理工大学A kind of inorganic flexible optoelectronic device structure and preparation method thereof
CN110323312B (en)*2019-06-192021-04-20武汉理工大学 A kind of inorganic flexible optoelectronic device structure and preparation method thereof
CN110793562A (en)*2019-11-072020-02-14山东浪潮人工智能研究院有限公司 A detector module packaging structure and method for diamond sensor testing

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