技术领域technical field
本发明是有关于一种发光单元，且特别是有关于一种发光单元的制作方法。The present invention relates to a light emitting unit, and in particular to a manufacturing method of the light emitting unit.
背景技术Background technique
一般而言，由多个发光二极管芯片所组成的发光单元于线路基板上的串并联控制，是在线路基板进行线路布局设计时，依照电源所能提供的电压值及电流值通过串并联方式就已经规划完成。然而，发光二极管芯片的种类众多，意即每一发光二极管芯片所需的电压值与电流值皆不同，因此当发光单元配置于线路基板上时，除了不容易得到最好的发光效果外，也会因修改线路布局而影响线路基板的美观及成本考量。Generally speaking, the series-parallel control of the light-emitting unit composed of multiple light-emitting diode chips on the circuit substrate is to realize the serial-parallel connection according to the voltage value and current value that the power supply can provide when the circuit layout design is carried out on the circuit substrate. Already planned. However, there are many types of LED chips, which means that the voltage and current values required by each LED chip are different. Therefore, when the light-emitting unit is arranged on the circuit board, it is not easy to obtain the best light-emitting effect. The aesthetics and cost considerations of the circuit substrate will be affected by modifying the circuit layout.
举例来说，若线路基板的线路布局的初始设计为四串一并的电路设计，当进行转换效率测试需将初始设计修改成二串二并的电路设计时，由于线路布局完成之后是无法进行串并联修改，因此需通过跳线、断线或重新制作规划线路布局的方式，才能达到所需的串并联设计，此不仅增加制作成本，也增加制作时间。For example, if the initial design of the circuit layout of the circuit substrate is a circuit design of four strings and one parallel, when the conversion efficiency test needs to be modified to a circuit design of two strings and two parallels, it is impossible to carry out the circuit design after the circuit layout is completed. Serial-parallel modification, therefore, the required serial-parallel design can only be achieved by jumping wires, disconnecting wires, or re-making the planned circuit layout, which not only increases the production cost, but also increases the production time.
发明内容Contents of the invention
本发明提供一种发光单元的制作方法，其具有选择性地通过切割程序而形成不同串联、并联或串并联回路。The invention provides a manufacturing method of a light-emitting unit, which can selectively form different series, parallel or series-parallel circuits through cutting procedures.
本发明的发光单元的制作方法，其包括以下步骤。提供半导体结构，其包括多个彼此分离的发光晶粒，其中每一发光晶粒包括发光元件、第一电极以及第二电极，而第一电极与第二电极配置于发光元件的同一侧，且第一电极与第二电极之间具有间隔。形成封装胶体以包覆发光晶粒，其中封装胶体包覆每一发光晶粒的发光元件，而暴露出每一发光晶粒的第一电极与第二电极。形成图案化金属层于发光晶粒的第一电极与第二电极上，其中图案化金属层与发光晶粒的第一电极与第二电极直接接触，并由第一电极与第二电极延伸至封装胶体上。提供基板，其中封装胶体位于基板与发光晶粒的发光元件之间。进行切割程序，以切割半导体结构、图案化金属层、封装胶体以及基板，而至少定义出具有串联回路、并联回路或串并联回路的发光单元。The manufacturing method of the light-emitting unit of the present invention includes the following steps. A semiconductor structure is provided, which includes a plurality of light-emitting crystal grains separated from each other, wherein each light-emitting crystal grain includes a light-emitting element, a first electrode, and a second electrode, and the first electrode and the second electrode are arranged on the same side of the light-emitting element, and There is a space between the first electrode and the second electrode. An encapsulation colloid is formed to cover the light-emitting chip, wherein the encapsulation colloid covers the light-emitting element of each light-emitting chip, and exposes the first electrode and the second electrode of each light-emitting chip. Forming a patterned metal layer on the first electrode and the second electrode of the light-emitting crystal, wherein the patterned metal layer is in direct contact with the first electrode and the second electrode of the light-emitting crystal, and extends from the first electrode and the second electrode to on the encapsulation gel. A substrate is provided, wherein the encapsulation colloid is located between the substrate and the light-emitting element of the light-emitting die. The dicing process is performed to cut the semiconductor structure, the patterned metal layer, the encapsulant, and the substrate to at least define light-emitting units with series loops, parallel loops, or series-parallel loops.
在本发明的一实施例中，上述的封装胶体内掺杂有荧光材料，且荧光材料包括黄色荧光粉、红色荧光粉、绿色荧光粉、蓝色荧光粉、钇铝石榴石荧光粉或上述材料的组合。In an embodiment of the present invention, the above-mentioned encapsulating gel is doped with a fluorescent material, and the fluorescent material includes yellow phosphor, red phosphor, green phosphor, blue phosphor, yttrium aluminum garnet phosphor or the above materials The combination.
在本发明的一实施例中，上述的发光单元包括至少两个发光晶粒，一发光晶粒的第一电极通过图案化金属层而电性连接至另一发光晶粒的第二电极，而形成具有串联回路的发光单元。In an embodiment of the present invention, the above-mentioned light-emitting unit includes at least two light-emitting crystals, the first electrode of one light-emitting crystal is electrically connected to the second electrode of the other light-emitting crystal through a patterned metal layer, and A light-emitting unit with a series loop is formed.
在本发明的一实施例中，上述的发光单元包括至少两个发光晶粒，一发光晶粒的第一电极通过图案化金属层而电性连接至另一发光晶粒的第一电极，且一发光晶粒的第二电极通过图案化金属层而电性连接至另一发光晶粒的第二电极，而形成具有并联回路的发光单元。In an embodiment of the present invention, the above-mentioned light-emitting unit includes at least two light-emitting crystals, the first electrode of one light-emitting crystal is electrically connected to the first electrode of the other light-emitting crystal through a patterned metal layer, and The second electrode of one light-emitting crystal is electrically connected to the second electrode of another light-emitting crystal through the patterned metal layer, so as to form a light-emitting unit with a parallel circuit.
在本发明的一实施例中，上述的发光单元包括至少四个发光晶粒，一发光晶粒的第一电极通过图案化金属层而电性连接至另一发光晶粒的第一电极，而一发光晶粒的第二电极与另一发光晶粒的第二电极通过图案化金属层而电性连接至又一发光晶粒的第一电极以及再一发光晶粒的第一电极，且又一发光晶粒的第二电极通过图案化金属层而电性连接至再一发光晶粒的第二电极，而形成具有串并联回路的发光单元。In an embodiment of the present invention, the above-mentioned light-emitting unit includes at least four light-emitting crystals, the first electrode of one light-emitting crystal is electrically connected to the first electrode of another light-emitting crystal through a patterned metal layer, and The second electrode of one light-emitting crystal grain and the second electrode of another light-emitting grain are electrically connected to the first electrode of another light-emitting grain and the first electrode of another light-emitting grain through the patterned metal layer, and The second electrode of one light-emitting crystal is electrically connected to the second electrode of another light-emitting crystal through the patterned metal layer, so as to form a light-emitting unit with a series-parallel circuit.
在本发明的一实施例中，上述的图案化金属层的材质与每一发光晶粒的第一电极与第二电极的材质相同。In an embodiment of the present invention, the above-mentioned patterned metal layer is made of the same material as the first electrode and the second electrode of each light emitting crystal grain.
在本发明的一实施例中，上述的图案化金属层的材质与每一发光晶粒的第一电极与第二电极的材质不同。In an embodiment of the present invention, the material of the patterned metal layer is different from the material of the first electrode and the second electrode of each light emitting crystal grain.
在本发明的一实施例中，还包括：提供外部电路，配置于发光单元的下方，发光单元通过图案化金属层与外部电路电性连接。In an embodiment of the present invention, it also includes: providing an external circuit, disposed under the light-emitting unit, and the light-emitting unit is electrically connected to the external circuit through the patterned metal layer.
在本发明的一实施例中，上述的外部电路包括承载板、配置于承载板上的第一外部接点与配置于承载板上的第二外部接点。发光单元通过图案化金属层分别和第一外部接点与第二外部接点电性连接。In an embodiment of the present invention, the above-mentioned external circuit includes a carrying board, a first external contact disposed on the carrying board, and a second external contact disposed on the carrying board. The light emitting unit is respectively electrically connected to the first external contact and the second external contact through the patterned metal layer.
在本发明的一实施例中，上述的外部电路包括承载板和对应图案化金属层且配置于承载板上的图案化线路层，发光单元通过图案化金属层与图案化线路层电性连接。In an embodiment of the present invention, the above-mentioned external circuit includes a carrier board and a patterned circuit layer corresponding to the patterned metal layer disposed on the carrier board, and the light emitting unit is electrically connected to the patterned circuit layer through the patterned metal layer.
在本发明的一实施例中，上述的图案化金属层与图案化线路层共形地对应配置。In an embodiment of the present invention, the above-mentioned patterned metal layer and the patterned circuit layer are configured conformally and correspondingly.
在本发明的一实施例中，还包括：提供散热件，配置于发光单元与外部电路之间。In an embodiment of the present invention, it further includes: providing a heat sink disposed between the light emitting unit and the external circuit.
在本发明的一实施例中，上述的基板的材质包括玻璃、陶瓷或蓝宝石。In an embodiment of the present invention, the material of the above-mentioned substrate includes glass, ceramics or sapphire.
基于上述，本发明是进行切割程序，以切割半导体结构、图案化金属层、封装胶体以及基板，而定义出具有串联回路、并联回路或串并联回路的发光单元。因此，使用者可依据使用需求而自行选择切割区域，而形成不同电路回路设计。故，本发明的发光单元的制作方法可让使用者具有较佳制作上的灵活度，且所形成的发光单元可具有多种不同态样的电路回路设计。Based on the above, the present invention performs a cutting process to cut the semiconductor structure, the patterned metal layer, the encapsulant, and the substrate to define light-emitting units with series loops, parallel loops, or series-parallel loops. Therefore, the user can select the cutting area according to the usage requirements, and form different circuit loop designs. Therefore, the manufacturing method of the light-emitting unit of the present invention allows users to have better manufacturing flexibility, and the formed light-emitting unit can have various circuit loop designs.
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.
附图说明Description of drawings
图1至图5为本发明的一实施例的一种发光单元的制作方法的示意图；1 to 5 are schematic diagrams of a manufacturing method of a light-emitting unit according to an embodiment of the present invention;
图6为本发明的另一实施例的一种发光单元的剖面示意图；6 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention;
图7A与图7B为本发明的又一实施例的一种发光单元的不同剖面的剖面示意图；7A and 7B are schematic cross-sectional views of different cross-sections of a light-emitting unit according to yet another embodiment of the present invention;
图8为本发明的另一实施例的一种发光单元的剖面示意图；8 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention;
图9为本发明的又一实施例的一种发光单元的剖面示意图；9 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention;
图10为本发明的再一实施例的一种发光单元的剖面示意图；Fig. 10 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention;
图11为本发明的更一实施例的一种发光单元的剖面示意图。FIG. 11 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention.
附图标记说明：Explanation of reference signs:
100a、100b、100c、100d、100e、100f、100g：发光单元；100a, 100b, 100c, 100d, 100e, 100f, 100g: light emitting units;
110：半导体结构；110: semiconductor structure;
120、120a、120b、120c、120d、120e、120f、120g、120h、120i、120j、120k：发光晶粒；120, 120a, 120b, 120c, 120d, 120e, 120f, 120g, 120h, 120i, 120j, 120k: light-emitting grains;
122：发光元件；122: light emitting element;
124：第一电极；124: first electrode;
126：第二电极；126: second electrode;
130：封装胶体；130: packaging colloid;
132：荧光材料；132: fluorescent material;
140：图案化金属层；140: patterned metal layer;
150：基板；150: substrate;
160、160’：外部电路；160, 160': external circuit;
162：承载板；162: carrying plate;
164a：第一外部接点；164a: first external contact;
164b：第二外部接点；164b: second external contact;
166：散热件；166: radiator;
168：图案化线路层；168: patterned circuit layer;
C、D、E：切割区域；C, D, E: cutting area;
G：间隔。G: Interval.
具体实施方式detailed description
图1至图5为本发明的一实施例的一种发光单元的制作方法的示意图。为了方便说明起见，图1及图3为本发明的一实施例的一种半导体结构110的俯视示意图；图2为沿图1的线A-A的剖面示意图；图4为沿图3的线B-B的剖面示意图；图5为沿图3的切割区域C切割半导体结构110后沿线C’-C’的剖面示意图。1 to 5 are schematic diagrams of a method for manufacturing a light emitting unit according to an embodiment of the present invention. For convenience of description, FIG. 1 and FIG. 3 are schematic top views of a semiconductor structure 110 according to an embodiment of the present invention; FIG. 2 is a schematic cross-sectional view along the line A-A of FIG. 1; FIG. 4 is a schematic view along the line B-B of FIG. Schematic cross-sectional view; FIG. 5 is a schematic cross-sectional view along the line C'-C' after cutting the semiconductor structure 110 along the cutting region C in FIG. 3 .
请先同时参考图1及图2，依照本实施例的发光单元的制作方法，首先，提供半导体结构110，其包括多个彼此分离的发光晶粒120，其中每一发光晶粒120包括发光元件122、第一电极124以及第二电极126，而第一电极124与第二电极126配置于发光元件122的同一侧，且第一电极124与第二电极126之间具有间隔G。此处，如图2所示，本实施例的第一电极124与第二电极126实质上为共平面的设计，但并不以此为限。其中，每一发光晶粒120的发光元件122可包括基材(未示出)，以及依序配置于基材上的第一型半导体层(未示出)、发光层(未示出)以及第二型半导体层(未示出)，但并不以此为限。且每一发光晶粒120可为相同或不同光色，端视实际设计需求。第一电极124与第一型半导体层(未示出)直接接触且电性连接。第二电极126与第二型半导体层(未示出)直接接触且电性连接。Please refer to FIG. 1 and FIG. 2 at the same time. According to the manufacturing method of the light-emitting unit of this embodiment, first, a semiconductor structure 110 is provided, which includes a plurality of light-emitting dies 120 separated from each other, wherein each light-emitting die 120 includes a light-emitting element. 122 , a first electrode 124 and a second electrode 126 , and the first electrode 124 and the second electrode 126 are disposed on the same side of the light emitting element 122 , and there is a gap G between the first electrode 124 and the second electrode 126 . Here, as shown in FIG. 2 , the first electrode 124 and the second electrode 126 in this embodiment are substantially coplanar, but not limited thereto. Wherein, the light-emitting element 122 of each light-emitting crystal grain 120 may include a substrate (not shown), and a first-type semiconductor layer (not shown), a light-emitting layer (not shown) and a second type semiconductor layer (not shown), but not limited thereto. Moreover, each light emitting crystal grain 120 can have the same or different light colors, depending on actual design requirements. The first electrode 124 directly contacts and is electrically connected to the first-type semiconductor layer (not shown). The second electrode 126 is in direct contact with and electrically connected to the second-type semiconductor layer (not shown).
接着，请再参考图1与图2，形成封装胶体130以包覆发光晶粒120，其中封装胶体130包覆每一发光晶粒120的发光元件122，而暴露出至少部分每一发光晶粒120的第一电极124与第二电极126。Next, please refer to FIG. 1 and FIG. 2 again, forming an encapsulant 130 to cover the light-emitting die 120, wherein the encapsulant 130 covers the light-emitting element 122 of each light-emitting die 120, and exposes at least part of each light-emitting die The first electrode 124 and the second electrode 126 of 120 .
接着，请参考图3，形成图案化金属层140于发光晶粒120的第一电极124与第二电极126上，其中图案化金属层140与发光晶粒120的第一电极124与第二电极126直接接触，并由第一电极124与第二电极126延伸至封装胶体130上。需说明的是，本实施例的图案化金属层140的材质可与每一发光晶粒120的第一电极124与第二电极126的材质可相同，其中图案化金属层140的材质与每一发光晶粒120的第一电极124与第二电极126的材质可例如是铂(Pt)、金(Au)、银(Ag)、镍(Ni)、钛(Ti)、铟(In)、锡(Sn)、铋(Bi)、上述材料的合金或上述材料的组合；或者是，图案化金属层140的材质与每一发光晶粒120的第一电极124与第二电极126的材质可不同，其中图案化金属层140的材质例如是铂、金、银、镍、钛、铟、锡、铋、上述材料的合金或上述材料的组合，而每一发光晶粒120的第一电极124与第二电极126的材质例如是铂、金、铟、锡、铋、上述材料的合金或上述材料的组合。Next, referring to FIG. 3 , a patterned metal layer 140 is formed on the first electrode 124 and the second electrode 126 of the light emitting chip 120 , wherein the patterned metal layer 140 and the first electrode 124 and the second electrode of the light emitting chip 120 126 is in direct contact and extends from the first electrode 124 and the second electrode 126 to the encapsulant 130 . It should be noted that the material of the patterned metal layer 140 in this embodiment can be the same as the material of the first electrode 124 and the second electrode 126 of each light-emitting chip 120, wherein the material of the patterned metal layer 140 is the same as that of each The material of the first electrode 124 and the second electrode 126 of the light-emitting crystal 120 can be, for example, platinum (Pt), gold (Au), silver (Ag), nickel (Ni), titanium (Ti), indium (In), tin (Sn), bismuth (Bi), alloys of the above materials, or a combination of the above materials; or, the material of the patterned metal layer 140 and the material of the first electrode 124 and the second electrode 126 of each light emitting crystal grain 120 can be different , wherein the material of the patterned metal layer 140 is, for example, platinum, gold, silver, nickel, titanium, indium, tin, bismuth, an alloy of the above materials or a combination of the above materials, and the first electrode 124 of each light emitting crystal grain 120 is connected to the The material of the second electrode 126 is, for example, platinum, gold, indium, tin, bismuth, an alloy of the above materials, or a combination of the above materials.
之后，请参考图4，提供基板150，其中封装胶体130位于基板150与发光晶粒120的发光元件122之间。此处，本实施例基板150的材质例如是玻璃、有机玻璃、陶瓷、蓝宝石或其他透光材质，其目的在于支撑半导体结构110，且有助于发光晶粒120的出光与导光效果。较佳的，基板150的材质是玻璃，易切割的特性可使处理更为简易。Afterwards, referring to FIG. 4 , a substrate 150 is provided, wherein the encapsulant 130 is located between the substrate 150 and the light-emitting elements 122 of the light-emitting die 120 . Here, the material of the substrate 150 in this embodiment is, for example, glass, plexiglass, ceramics, sapphire or other light-transmitting materials, and its purpose is to support the semiconductor structure 110 and contribute to the light-emitting and light-guiding effects of the light-emitting die 120 . Preferably, the material of the substrate 150 is glass, and the property of being easy to cut can make the processing easier.
最后，请同时参考图3与图5，进行切割程序，以切割半导体结构110、图案化金属层140、封装胶体130以及基板150，而至少定义出具有串联回路、并联回路或串并联回路的发光单元100a。详细来说，本实施例的切割程序是沿着图3中的切割区域C来进行切割，此时所形成的发光单元100a包括至少两个发光晶粒(图5中示意地示出四个发光晶粒，且为了方便说明起见，分别标示为120a、120b、120c、120d)。发光晶粒120a的第一电极124通过图案化金属层140而电性连接至发光晶粒120b的第二电极126；发光晶粒120b的第一电极124通过图案化金属层140而电性连接至发光晶粒120c的第二电极126，发光晶粒120c的第一电极124通过图案化金属层140而电性连接至发光晶粒120d的第二电极126，而形成具有串联回路(即四串)的发光单元100a。Finally, please refer to FIG. 3 and FIG. 5 at the same time to perform a dicing procedure to cut the semiconductor structure 110, the patterned metal layer 140, the encapsulant 130, and the substrate 150, and at least define the luminescence with a series loop, a parallel loop, or a series-parallel loop. Unit 100a. In detail, the cutting procedure of this embodiment is to cut along the cutting region C in FIG. grains, and for convenience of description, are respectively marked as 120a, 120b, 120c, 120d). The first electrode 124 of the light emitting crystal grain 120a is electrically connected to the second electrode 126 of the light emitting grain 120b through the patterned metal layer 140; the first electrode 124 of the light emitting grain 120b is electrically connected to the The second electrode 126 of the light-emitting crystal 120c, and the first electrode 124 of the light-emitting crystal 120c are electrically connected to the second electrode 126 of the light-emitting crystal 120d through the patterned metal layer 140, forming a series loop (ie, four strings) The light emitting unit 100a.
虽然上述切割后是形成具有串联回路(即四串)的发光单元100a，但于其他实施例中，也可通过使用者的需求而自行变更切割区域而形成不同电路回路的发光单元。Although the light-emitting unit 100a with series circuits (ie, four strings) is formed after cutting, in other embodiments, the cutting area can also be changed according to the needs of users to form light-emitting units with different circuit circuits.
举例来说，请同时参考图3与图6，其中图6为沿图3的切割区域D切割后沿线D’-D’的剖面示意图。本实施例的切割程序是沿着图3中的切割区域D来进行切割，此时所形成的发光单元100b包括至少两个发光晶粒(图6中示意地示出三个发光晶粒，且为了方便说明起见，分别标示为120e、120f、120g)。发光晶粒120e的第一电极124、发光晶粒120f的第一电极124以及发光晶粒120g的第一电极124通过图案化金属层140而彼此电性连接，且发光晶粒120e的第二电极126、发光晶粒120f的第二电极126以及发光晶粒120g的第二电极126通过图案化金属层140而彼此电性连接，而形成具有并联回路(即三并)的发光单元100b。For example, please refer to FIG. 3 and FIG. 6 at the same time, wherein FIG. 6 is a schematic cross-sectional view along the line D'-D' after cutting along the cutting area D in FIG. 3 . The cutting procedure of this embodiment is to cut along the cutting region D in FIG. For convenience of description, they are respectively marked as 120e, 120f, 120g). The first electrode 124 of the light-emitting grain 120e, the first electrode 124 of the light-emitting grain 120f, and the first electrode 124 of the light-emitting grain 120g are electrically connected to each other through the patterned metal layer 140, and the second electrode of the light-emitting grain 120e 126 , the second electrode 126 of the light-emitting die 120f and the second electrode 126 of the light-emitting die 120g are electrically connected to each other through the patterned metal layer 140 to form a light-emitting unit 100b with a parallel circuit (ie, triple parallel).
或者是，请同时参考图3、图7A与图7B，其中图7A与图7B为沿图3的切割区域E切割后的剖面示意图，而图7A是沿图3的线I-I的剖面示意图，且图7B是沿图3的线II-II的剖面示意图。本实施例的切割程序是沿着图3中的切割区域E来进行切割，此时所形成的发光单元100c包括至少四个发光晶粒(图3的切割区域E中示意地示出四个发光晶粒，且为了方便说明起见，分别标示为120h、120i、120j、120k)。发光晶粒120h的第二电极126通过图案化金属层140而电性连接至发光晶粒120k的第二电极126(请参考图3与图7B)，而发光晶粒120h的第一电极124与发光晶粒120k的第一电极124通过图案化金属层140而电性连接至120i发光晶粒的第二电极126以及发光晶粒120j的第二电极126(请参考图3与图7A)，且发光晶粒120i的第一电极124通过图案化金属层140而电性连接至发光晶粒120j的第一电极124，而形成具有串并联回路(即两串两并)的发光单元100c。Or, please refer to FIG. 3, FIG. 7A and FIG. 7B at the same time, wherein FIG. 7A and FIG. 7B are schematic cross-sectional views after cutting along the cutting area E in FIG. 3, and FIG. 7A is a schematic cross-sectional view along the line I-I of FIG. 3, and FIG. 7B is a schematic cross-sectional view along line II-II of FIG. 3 . The cutting procedure of this embodiment is to cut along the cutting area E in FIG. grains, and for convenience of description, are respectively marked as 120h, 120i, 120j, 120k). The second electrode 126 of the light emitting chip 120h is electrically connected to the second electrode 126 of the light emitting chip 120k through the patterned metal layer 140 (please refer to FIG. 3 and FIG. 7B ), and the first electrode 124 of the light emitting chip 120h is connected to The first electrode 124 of the light emitting die 120k is electrically connected to the second electrode 126 of the light emitting die 120i and the second electrode 126 of the light emitting die 120j through the patterned metal layer 140 (please refer to FIG. 3 and FIG. 7A ), and The first electrode 124 of the light-emitting die 120i is electrically connected to the first electrode 124 of the light-emitting die 120j through the patterned metal layer 140 to form a light-emitting unit 100c with a series-parallel circuit (ie, two series and two parallel circuits).
于其他未示出的实施例中，本领域的技术人员当可参照前述实施例的说明，依据实际需求，而自行选择在半导体结构110上的切割区域，而形成所需的电路回路(如两串三并、四串一并等)的发光单元。In other unshown embodiments, those skilled in the art may refer to the descriptions of the foregoing embodiments, and select the cutting area on the semiconductor structure 110 according to actual needs, so as to form the required circuit loop (such as two Three-parallel, four-string and one-parallel, etc.) light-emitting units.
此外，值得注意的是，本实施例的图案化金属层140是覆盖于发光晶粒120的第一电极124与第二电极126上且延伸至部分封装胶体130上。也就是说，图案化金属层140可增加发光晶粒120的第一电极124与第二电极126的接触面积，有利于切割后所形成的发光单元100a、100b、100c与外部电路进行组装，可有效提高对位精准度及组装效率。In addition, it is worth noting that the patterned metal layer 140 of this embodiment covers the first electrode 124 and the second electrode 126 of the light-emitting die 120 and extends to part of the encapsulant 130 . That is to say, the patterned metal layer 140 can increase the contact area between the first electrode 124 and the second electrode 126 of the light-emitting crystal grain 120, which facilitates the assembly of the light-emitting units 100a, 100b, and 100c formed after cutting with external circuits, and can Effectively improve alignment accuracy and assembly efficiency.
另外，请参考图8，其中图8为本发明的另一实施例的一种发光单元的剖面示意图。本实施例的发光单元100d与图5的发光单元100a相似，惟二者主要差异之处在于：本实施例为了改变发光单元100d所提供的发光颜色，因此于封装胶体130内掺杂有荧光材料132，其中荧光材料132例如是黄色荧光粉、红色荧光粉、绿色荧光粉、蓝色荧光粉、钇铝石榴石荧光粉或上述材料的组合。In addition, please refer to FIG. 8 , which is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention. The light-emitting unit 100d of this embodiment is similar to the light-emitting unit 100a of FIG. 5 , but the main difference between the two is that in this embodiment, in order to change the light-emitting color provided by the light-emitting unit 100d, fluorescent materials are doped in the packaging colloid 130 132, wherein the fluorescent material 132 is, for example, yellow phosphor, red phosphor, green phosphor, blue phosphor, yttrium aluminum garnet phosphor or a combination of the above materials.
图9为本发明的又一实施例的一种发光单元的剖面示意图。请参考图9，本实施例的发光单元100e的制作方法还包括提供外部电路160，其中外部电路160配置于发光单元100e的下方，且发光单元100e通过图案化金属层140与外部电路160电性连接。举例来说，本实施例的外部电路160例如是线路基板，其包括承载板162、第一外部接点164a与第二外部接点164b。更详细的说，发光单元100e通过图案化金属层140分别和第一外部接点164a与第二外部接点164b电性连接。由于发光晶粒120a、120b、120c和120d已通过图案化金属层140电性连接，因此仅需于外部电路160的第一外部接点164a与第二外部接点164b分别通上正电及负电后，即可驱动发光单元100e而产生光线，也不用另外再于外部电路160上布局电路，可具有较佳的使用弹性。Fig. 9 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention. Please refer to FIG. 9 , the manufacturing method of the light emitting unit 100e of this embodiment further includes providing an external circuit 160, wherein the external circuit 160 is disposed under the light emitting unit 100e, and the light emitting unit 100e is electrically connected to the external circuit 160 through the patterned metal layer 140. connect. For example, the external circuit 160 of this embodiment is a circuit substrate, which includes a carrier board 162 , a first external contact 164 a and a second external contact 164 b. In more detail, the light emitting unit 100e is electrically connected to the first external contact 164a and the second external contact 164b respectively through the patterned metal layer 140 . Since the light-emitting crystals 120a, 120b, 120c, and 120d are electrically connected through the patterned metal layer 140, it is only necessary to connect positive and negative charges to the first external contact 164a and the second external contact 164b of the external circuit 160, respectively. The light-emitting unit 100e can be driven to generate light, and there is no need to lay out circuits on the external circuit 160 , which has better flexibility of use.
特别的是，如图10所示，于另一实施例中，发光单元100f还可以包括散热件166，其中散热件166配置于发光单元100f与外部电路160之间，可有效增加的散热效率，但并不以此为限。In particular, as shown in FIG. 10, in another embodiment, the light emitting unit 100f may further include a heat sink 166, wherein the heat sink 166 is arranged between the light emitting unit 100f and the external circuit 160, which can effectively increase the heat dissipation efficiency, But not limited to this.
图11为本发明的更一实施例的一种发光单元的剖面示意图。请同时参考图9和图11，本实施例的发光单元100g与图9实施例的发光单元100e相异之处在于：本实施例的外部电路160’包括承载板162和对应图案化金属层140且配置于承载板162上的图案化线路层168，而发光单元100g通过图案化金属层140与图案化线路层168电性连接。较佳地，其中图案化金属层140与图案化线路层168共形地对应配置于承载板162上，可具有较大的散热面积和对位面积，但并不以此为限。FIG. 11 is a schematic cross-sectional view of a light emitting unit according to another embodiment of the present invention. Please refer to FIG. 9 and FIG. 11 at the same time. The difference between the light emitting unit 100g of this embodiment and the light emitting unit 100e of the embodiment of FIG. And it is disposed on the patterned circuit layer 168 on the carrier board 162 , and the light emitting unit 100 g is electrically connected to the patterned circuit layer 168 through the patterned metal layer 140 . Preferably, the patterned metal layer 140 and the patterned circuit layer 168 are conformally and correspondingly disposed on the carrier board 162 , which may have a larger heat dissipation area and alignment area, but not limited thereto.
综上所述，本发明是进行切割程序，以切割半导体结构、图案化金属层、封装胶体以及基板，而定义出具有串联回路、并联回路或串并联回路的发光单元。因此，使用者可依据使用需求而自行选择切割区域，而形成不同电路回路设计。故，本发明的发光单元的制作方法可让使用者具有较佳制作上的灵活度，且所形成的发光单元可具有多种不同态样的电路回路设计。To sum up, the present invention performs a dicing process to cut the semiconductor structure, the patterned metal layer, the encapsulant, and the substrate to define light-emitting units with series loops, parallel loops, or series-parallel loops. Therefore, the user can select the cutting area according to the usage requirements, and form different circuit loop designs. Therefore, the manufacturing method of the light-emitting unit of the present invention allows users to have better manufacturing flexibility, and the formed light-emitting unit can have various circuit loop designs.
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
| Application Number | Priority Date | Filing Date | Title |
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| CN201410359002.XACN105322058A (en) | 2014-07-25 | 2014-07-25 | Method for manufacturing light-emitting unit |
| Application Number | Priority Date | Filing Date | Title |
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| CN201410359002.XACN105322058A (en) | 2014-07-25 | 2014-07-25 | Method for manufacturing light-emitting unit |
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| CN105322058Atrue CN105322058A (en) | 2016-02-10 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201410359002.XAPendingCN105322058A (en) | 2014-07-25 | 2014-07-25 | Method for manufacturing light-emitting unit |
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