技术领域technical field
本发明涉及一种具有高效散热结构的LTCC基板制作方法，特别是一种用于多芯片组件散热封装的陶瓷复合基板的结构及其制作方法。The invention relates to a manufacturing method of an LTCC substrate with a high-efficiency heat dissipation structure, in particular to a structure and a manufacturing method of a ceramic composite substrate used for heat dissipation packaging of a multi-chip component.
背景技术Background technique
现代电子装备正朝着短、小、轻、薄、高性能、高可靠和低成本方向发展，尤其是各种载荷受限的军用电子设备以及便携式民用电子产品对体积、重量、性能的要求更加苛刻，要求不断提高电子装备的互联和组装密度。多层低温共烧陶瓷(LTCC)技术是将低温烧结陶瓷粉末制成厚度精确而且致密的生瓷带，在生瓷带上利用冲孔或激光打孔、微孔注浆、精密导体浆料印刷等工艺制作出所需要的电路图形，并可将无源元件和功能电路埋人多层陶瓷基板中，然后叠压在一起，在850～900℃下烧结，制成三维空间的高密度电路。LTCC技术是实现电子装备三维立体高密度互联、组装较为理想的多层电路板成型技术。Modern electronic equipment is developing in the direction of short, small, light, thin, high performance, high reliability and low cost, especially military electronic equipment with limited load and portable civilian electronic products have higher requirements for volume, weight and performance. It is demanding and requires continuous improvement of the interconnection and assembly density of electronic equipment. Multi-layer low-temperature co-fired ceramics (LTCC) technology is to make low-temperature sintered ceramic powder into a green ceramic belt with precise thickness and density, and use punching or laser drilling, micro-hole grouting, and precision conductive paste printing on the green ceramic belt. and other processes to produce the required circuit pattern, and the passive components and functional circuits can be embedded in the multilayer ceramic substrate, then stacked together, and sintered at 850-900 ° C to make a three-dimensional high-density circuit. LTCC technology is an ideal multi-layer circuit board forming technology to realize three-dimensional high-density interconnection and assembly of electronic equipment.
LTCC多层基板具有介电常数低、插入损耗小、介质损耗角正切良好、可埋置无源元件和功能电路等诸多优点，已广泛应用于微电子封装、多芯片组件(MCM)和系统级封装(SIP)。LTCC技术在提升电路组件互联、组装密度的同时，组件的热密度也在迅速增加。在大功率、高密度封装中，电子元件及芯片等在运行过程中产生的热量主要通过陶瓷基板散发到环境中。以微波T/R组件为例，为保证组件体积、重量的同时，增加其散热能力，很多高功率器件如微波芯片常采用多芯片组件的形式，直接以裸芯片组装到LTCC基板上。但是LTCC材料的导热系数只有2W/mK～5W/mK，比大部分陶瓷基板材料都要低，目前广泛采用在LTCC基板内增加金属散热通孔的方法对基板散热能力进行补偿，但随着电路密度和器件功率的进一步提升，金属散热通孔逐渐满足不了高功率多芯片组件的冷却要求。LTCC multilayer substrate has many advantages such as low dielectric constant, small insertion loss, good dielectric loss tangent, and can embed passive components and functional circuits. It has been widely used in microelectronic packaging, multi-chip modules (MCM) and system-level encapsulation (SIP). While LTCC technology improves the interconnection and assembly density of circuit components, the thermal density of components is also increasing rapidly. In high-power, high-density packaging, the heat generated by electronic components and chips during operation is mainly dissipated to the environment through the ceramic substrate. Taking microwave T/R components as an example, in order to ensure the volume and weight of the components and increase their heat dissipation capacity, many high-power devices such as microwave chips often adopt the form of multi-chip components, which are directly assembled on the LTCC substrate with bare chips. However, the thermal conductivity of LTCC materials is only 2W/mK～5W/mK, which is lower than most ceramic substrate materials. At present, the method of adding metal heat dissipation vias in the LTCC substrate is widely used to compensate the heat dissipation capacity of the substrate, but with the circuit With the further improvement of density and device power, metal heat dissipation vias gradually cannot meet the cooling requirements of high-power multi-chip components.
到目前为止，在大功率集成电路中已投入使用的高导热陶瓷基板材料有Al2O3、BeO和AlN等。Al2O3强度及化学稳定性高，且原料来源丰富，适用于各种各样的技术制造以及不同的形状，但Al2O3基板的导热系数相对较低，和Si、GaAs等半导体材料的热膨胀系数也不太匹配。BeO具有比金属铝还高的导热系数，但温度超过300℃后迅速降低，最重要的是由于其毒性限制了自身的发展。AlN是近年来迅速发展的新型无毒陶瓷基板材料，具有优越的热传导性、高绝缘性和接近于Si、GaAs等的热膨胀系数，被誉为新一代高温大功率射频基板的理想材料；AlN陶瓷的缺点是即使在表面有非常薄的氧化层也会对导热系数产生影响，只有对材料和工艺进行严格控制才能制造出一致性较好的AlN基板。So far, Al2 O3 , BeO, and AlN have been used as high thermal conductivity ceramic substrate materials in high-power integrated circuits. Al2 O3 has high strength and chemical stability, and has abundant sources of raw materials. It is suitable for various technical manufacturing and different shapes, but the thermal conductivity of Al2 O3 substrates is relatively low, and it is different from semiconductor materials such as Si and GaAs. The coefficient of thermal expansion does not quite match either. BeO has a higher thermal conductivity than metal aluminum, but it decreases rapidly after the temperature exceeds 300 °C, and most importantly, its development is limited due to its toxicity. AlN is a new type of non-toxic ceramic substrate material that has developed rapidly in recent years. It has superior thermal conductivity, high insulation and a thermal expansion coefficient close to Si, GaAs, etc., and is known as an ideal material for a new generation of high-temperature and high-power RF substrates; AlN ceramics The disadvantage is that even a very thin oxide layer on the surface will affect the thermal conductivity, and only strict control of materials and processes can produce AlN substrates with better consistency.
发明内容Contents of the invention
本发明的目的是旨在提供一种具有显著的抗热震性能和热稳定性能、对提高在极端温度下工作器件稳定性十分明显的多芯片组件散热封装陶瓷复合基板的制备方法，以解决常规LTCC基板导热系数低、在多芯片组件工作时面临散热能力不足的问题。The purpose of the present invention is to provide a method for preparing a multi-chip module heat dissipation packaging ceramic composite substrate with remarkable thermal shock resistance and thermal stability, which is very obvious for improving the stability of working devices at extreme temperatures, so as to solve the problem of conventional LTCC substrates have low thermal conductivity and face the problem of insufficient heat dissipation when multi-chip components work.
为了实现上述目的，本发明提供的一种多芯片组件散热封装陶瓷复合基板的制备方法，具有如下技术特征：首先分别在上、下两层低温共烧陶瓷LTCC生瓷片中制出器件安装腔体和液冷流道腔体，再在LTCC生瓷片的器件安装腔体和液冷流道腔体内填充牺牲材料，然后将上、下两层生瓷片叠层在氮化铝AlN底板上；用温水等静压将LTCC生瓷片和AlN底板层压在一起后，放入烧结炉中进行共烧，形成带热沉和液冷流道的LTCC-AlN复合基板；基板烧结完成后，通过共晶焊或导电银浆粘接将多芯片组件安装在AlN底板上，再通过金丝键合工艺将芯片组件与下层LTCC基板电路表面进行电气互联，最后通过焊接将液冷管、封装盖板与LTCC焊接在一起，完成多芯片组件在LTCC-AlN复合基板上的组装。In order to achieve the above object, the present invention provides a method for preparing a multi-chip module heat dissipation package ceramic composite substrate, which has the following technical features: firstly, respectively make device mounting cavities in the upper and lower layers of low temperature co-fired ceramic LTCC green ceramic sheets body and liquid-cooled runner cavity, and then fill the sacrificial material in the device installation cavity and liquid-cooled runner cavity of the LTCC green ceramic chip, and then stack the upper and lower layers of green ceramic chips on the aluminum nitride AlN base plate ; After laminating the LTCC green ceramic sheet and the AlN base plate together with warm water isostatic pressing, put them into a sintering furnace for co-firing to form an LTCC-AlN composite substrate with a heat sink and a liquid-cooled flow channel; after the substrate is sintered, The multi-chip component is mounted on the AlN substrate by eutectic soldering or conductive silver paste bonding, and then the chip component is electrically interconnected with the circuit surface of the lower LTCC substrate through the gold wire bonding process, and finally the liquid cooling tube and the package cover are connected by welding The board and LTCC are welded together to complete the assembly of multi-chip components on the LTCC-AlN composite substrate.
本发明具有如下有益效果。The present invention has the following beneficial effects.
本发明通过层压、共烧将带有器件安装腔体.和液冷流道腔体的LTCC多层基板与AlN底板固定在一起，再将多芯片组件组装在AlN底板上，成功地利用AlN底板的高导热系数(150W/mK～190W/mK)和液冷流道散热对多芯片组件进行冷却，解决了LTCC基板材料导热系数低、多芯片组件结构散热困难的缺陷。The invention fixes the LTCC multi-layer substrate with the device mounting cavity and the liquid-cooled flow channel cavity with the AlN base plate through lamination and co-firing, and then assembles the multi-chip component on the AlN base plate, successfully using AlN The high thermal conductivity of the base plate (150W/mK～190W/mK) and the liquid-cooled flow channel can cool the multi-chip module, which solves the defects of low thermal conductivity of the LTCC substrate material and difficult heat dissipation of the multi-chip module structure.
本发明通过AlN底板将芯片工作过程中产生的热量带走，实现对芯片的冷却；同时，通过液冷管道对基板内的液冷流道进行通液循环，将AlN底板的热量带出，实现对整个结构的冷却，具有显著的抗热震性能和热稳定性能，对提高在极端温度下工作器件稳定性十分显著。The invention uses the AlN base plate to take away the heat generated during the working process of the chip to realize cooling of the chip; at the same time, the liquid cooling channel in the substrate is circulated through the liquid cooling pipe to take out the heat of the AlN base plate to realize The cooling of the whole structure has remarkable thermal shock resistance and thermal stability, which is very significant for improving the stability of devices working at extreme temperatures.
本发明将上、下两层生瓷片叠层在AlN底板上；用温水等静压将LTCC生瓷片和AlN底板层压在一起后，放入烧结炉中进行共烧，形成带热沉和液冷流道的LTCC-AlN复合基板，可在不增加外部散热装置的情况下，克服LTCC材料本身导热系数低的缺点，满足LTCC基板对多芯片组件的散热要求。In the present invention, the upper and lower layers of green ceramic sheets are laminated on the AlN base plate; after the LTCC green ceramic sheet and the AlN base plate are laminated together by isostatic pressing in warm water, they are placed in a sintering furnace for co-firing to form a heat sink The LTCC-AlN composite substrate with liquid cooling channels can overcome the shortcoming of the low thermal conductivity of the LTCC material itself without adding an external heat sink, and meet the heat dissipation requirements of the LTCC substrate for multi-chip components.
附图说明Description of drawings
图1是本发明多芯片组件散热封装陶瓷复合基板结构的实施例示意图。Fig. 1 is a schematic diagram of an embodiment of the ceramic composite substrate structure of the heat dissipation package of the multi-chip module of the present invention.
图2是本发明多芯片组件散热封装陶瓷复合基板的制作流程示意图。Fig. 2 is a schematic diagram of the manufacturing process of the multi-chip module heat dissipation package ceramic composite substrate of the present invention.
图中：1.LTCC多层基板、2.AlN底板、3.多芯片组件、4.液冷流道腔体、5.封装盖板、6.液冷管、7.下层LTCC生瓷片、8.上层LTCC生瓷片、9.多芯片组件安装腔体、10.牺牲材料、11层压后的LTCC-AlN复合基板、12.共烧后的LTCC-AlN复合基板。In the figure: 1. LTCC multi-layer substrate, 2. AlN base plate, 3. Multi-chip component, 4. Liquid-cooled flow channel cavity, 5. Package cover plate, 6. Liquid-cooled tube, 7. Lower LTCC green ceramic chip, 8. Upper LTCC green ceramic sheet, 9. Multi-chip component mounting cavity, 10. Sacrificial material, 11 Laminated LTCC-AlN composite substrate, 12. Co-fired LTCC-AlN composite substrate.
具体实施方式detailed description
以下结合附图和实施例对本发明作进一步详细说明,但并不因此将本发明限制在所述的实施例范围之中。The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited to the scope of the described embodiments.
参阅图1。在以下描述的一个最佳实施例中，多芯片组件散热封装陶瓷复合基板是基于LTCC-AlN复合基板的多芯片散热封装结构。多芯片组件散热封装陶瓷复合基板主要包括LTCC多层基板1、底层AlN底板2、多芯片组件3、液冷流道腔体4、封装盖板5和液冷管6，其中，LTCC多层基板1叠层在AlN底板2上，液冷流道腔体4设置在LTCC多层基板1与AlN底板2叠层的结合面之间，沿叠层纵向截面依次排列，并连通设置在LTCC多层基板1上表面上的液冷管6，多芯片组件3装配在LTCC多层基板1横向制出的缺口槽中，固定在AlN底板2上，通过LTCC多层基板1上的封装盖板5密闭封装。芯片工作过程中产生的热量通过AlN底板2散热带走部分热量进行冷却，同时，通过液冷管6连通液冷流道腔体4形成通液循环通道，通液循环通道对LTCC-AlN复合基板内的液冷流道腔体4进行通液循环，将AlN底板的热量带出，实现对整个结构的冷却。See Figure 1. In a preferred embodiment described below, the multi-chip package heat dissipation package ceramic composite substrate is a multi-chip heat dissipation package structure based on the LTCC-AlN composite substrate. Multi-chip component heat dissipation packaging ceramic composite substrate mainly includes LTCC multilayer substrate 1, bottom AlN base plate 2, multi-chip component 3, liquid cooling channel cavity 4, packaging cover plate 5 and liquid cooling tube 6, among which, LTCC multilayer substrate 1 is stacked on the AlN base plate 2, and the liquid cooling channel cavity 4 is arranged between the joint surface of the LTCC multilayer substrate 1 and the AlN base plate 2, arranged in sequence along the longitudinal section of the stack, and connected to the LTCC multilayer The liquid cooling tube 6 on the upper surface of the substrate 1 and the multi-chip module 3 are assembled in the notch groove made in the transverse direction of the LTCC multilayer substrate 1, fixed on the AlN base plate 2, and sealed by the packaging cover plate 5 on the LTCC multilayer substrate 1 encapsulation. The heat generated during the working process of the chip is cooled by dissipating part of the heat through the AlN base plate 2. At the same time, the liquid cooling channel cavity 4 is connected to the liquid cooling channel cavity 4 through the liquid cooling tube 6 to form a liquid circulation channel. The liquid circulation channel supports the LTCC-AlN composite substrate. The liquid-cooled flow channel cavity 4 inside is circulated through the liquid to take out the heat of the AlN base plate and realize the cooling of the entire structure.
参阅图2。根据本发明，首先分别在上、下两层LTCC生瓷片中制出器件安装腔体和液冷流道腔体，再在LTCC生瓷片的腔体内填充牺牲材料，然后将上、下两层生瓷片叠层在AlN底板上；用温水等静压将LTCC生瓷片和AlN底板层压在一起后，放入烧结炉中进行共烧，形成带热沉和液冷流道的LTCC-AlN复合基板；基板烧结完成后，通过共晶焊或导电银浆粘接将多芯片组件安装在AlN底板上，再通过金丝键合工艺将芯片组件与LTCC基板腔体台阶表面进行电气互联，最后通过焊接将液冷管、封装盖板与LTCC焊接在一起，完成多芯片组件在LTCC-AlN复合基板上的组装。See Figure 2. According to the present invention, the device mounting cavity and the liquid-cooled runner cavity are respectively made in the upper and lower layers of LTCC green ceramic sheets, and then sacrificial materials are filled in the cavity of the LTCC green ceramic sheet, and then the upper and lower layers Layered green ceramic sheets are laminated on the AlN base plate; after the LTCC green ceramic sheet and the AlN base plate are laminated together by warm water isostatic pressing, they are placed in a sintering furnace for co-firing to form an LTCC with heat sink and liquid cooling channels -AlN composite substrate; after the substrate is sintered, the multi-chip component is mounted on the AlN substrate by eutectic soldering or conductive silver paste bonding, and then the chip component is electrically interconnected with the stepped surface of the LTCC substrate cavity through the gold wire bonding process , and finally the liquid cooling tube, the package cover plate and the LTCC are welded together by welding to complete the assembly of the multi-chip component on the LTCC-AlN composite substrate.
具体可以采用以下步骤完成多芯片组件散热封装陶瓷复合基板的制作：Specifically, the following steps can be used to complete the production of the multi-chip component heat dissipation package ceramic composite substrate:
1)采用冲孔机或激光加工设备，分别在下层LTCC生瓷片7、上层LTCC生瓷片8上制出多器件安装腔体.9、液冷流道腔体4、电路通孔以及定位通孔；1) Use punching machine or laser processing equipment to make multi-device mounting cavities on the lower LTCC green ceramic sheet 7 and the upper LTCC green ceramic sheet 8 respectively. 9, liquid cooling flow channel cavity 4, circuit through holes and positioning through hole;
2)采用丝网印刷机，印制下层LTCC生瓷片7、上层LTCC生瓷片8表面的导线，同时填充两层生瓷片上的电路通孔；2) Use a screen printing machine to print the wires on the surface of the lower LTCC green ceramic sheet 7 and the upper layer LTCC green ceramic sheet 8, and simultaneously fill the circuit through holes on the two layers of green ceramic sheets;
3)分别在下层LTCC生瓷片7、上层LTCC生瓷片8的腔体内填充牺牲材料10，牺牲材料填充高度与腔体高度比为95％左右；3) filling sacrificial material 10 in the cavities of the lower LTCC green sheet 7 and the upper LTCC green sheet 8 respectively, the ratio of the filling height of the sacrificial material to the height of the cavity is about 95%;
4)采用高精度贴片机或销钉定位手工叠片，将下层LTCC生瓷片7、上层LTCC生瓷片8与底层AlN底板2精确叠层在一起，其中AlN底板表面需提前镀敷一层厚度为10～15μm的Au层；4) Using a high-precision placement machine or pin positioning manual lamination, the lower LTCC green ceramic sheet 7, the upper LTCC green ceramic sheet 8 and the lower AlN base plate 2 are accurately laminated together, and the surface of the AlN base plate needs to be plated in advance. Au layer with a thickness of 10-15 μm;
5)采用温水等静压，对下层LTCC生瓷片7、上层LTCC生瓷片8与AlN底板2进行层压，层压压力为30MPa、层压温度为70℃，持续10～15min；5) Laminate the lower LTCC green ceramic sheet 7, the upper LTCC green ceramic sheet 8, and the AlN base plate 2 by warm water isostatic pressing, with a lamination pressure of 30 MPa and a lamination temperature of 70°C for 10 to 15 minutes;
6)将层压在一起的LTCC生瓷片与AlN底板放入烧结炉中进行共烧，首先从室温以1～2℃/min的速度升至450～500℃后，维持峰值温度1～2h，完成LTCC生瓷片排胶，同时保证腔体内填充的牺牲材料通过液冷流道出、入口完全挥发；再以2～3℃/min的速度升至850～900℃，维持峰值温度2～3h后以3℃/min的速度下降至室温，完成LTCC生瓷片在AlN底板上的烧结，最终形成带空腔结构的LTCC-AlN复合基板；6) Put the laminated LTCC green ceramic sheet and the AlN base plate into the sintering furnace for co-firing, first increase from room temperature to 450-500°C at a rate of 1-2°C/min, and then maintain the peak temperature for 1-2h , to complete the debinding of LTCC green ceramic chips, and at the same time ensure that the sacrificial material filled in the cavity is completely volatilized through the liquid-cooled flow channel and inlet; then rise to 850-900°C at a speed of 2-3°C/min, and maintain a peak temperature of 2-900°C After 3 hours, the temperature was lowered to room temperature at a rate of 3°C/min, and the sintering of the LTCC green ceramic sheet on the AlN substrate was completed, finally forming an LTCC-AlN composite substrate with a cavity structure;
7)采用共晶焊或者导电银浆将多芯片组件3固定在AlN底板2上，以GaAs毫米波功率芯片为例，通过Au80Sn20焊片与AlN底板2共晶焊接在一起，或者采用导电银浆与AlN底板2粘接在一起；7) Using eutectic soldering or conductive silver paste to fix the multi-chip module 3 on the AlN base plate 2, taking the GaAs millimeter wave power chip as an example, eutectic welding with the AlN base plate 2 through Au80Sn20 solder, or using conductive silver paste bonded with the AlN base plate 2;
8)通过金丝键合实现多芯片组件3与LTCC多层基板1腔体台阶表面电路间的电气互联；8) Realize the electrical interconnection between the multi-chip component 3 and the LTCC multilayer substrate 1 cavity step surface circuit through gold wire bonding;
9)最后，采用熔点Sn63Pb37焊料或者In52Sn48焊料将金属液冷管6和金属封装盖板5焊接在LTCC基板上，完成整个液冷流道的组装，同时完成对多芯片组件的密封。9) Finally, the metal liquid cooling tube 6 and the metal packaging cover plate 5 are welded on the LTCC substrate by using melting point Sn63Pb37 solder or In52Sn48 solder to complete the assembly of the entire liquid cooling flow channel and simultaneously complete the sealing of the multi-chip assembly.
以上所述的仅是本发明的优选实施例。应当指出，对于本领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以根据原材料的不同作出若干变形和改进，比如，本发明对于高温共烧陶瓷(HTCC)材料同样有效，只需调整层压和烧结工艺参数即可完成基于HTCC-AlN复合基板的多芯片组件散热结构的制作。这些变更和改变应视为属于本发明的保护范围。What has been described above are only preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, under the premise of not departing from the principle of the present invention, some deformations and improvements can also be made according to different raw materials. For example, the present invention is equally effective for high-temperature co-fired ceramics (HTCC) materials , just adjust the lamination and sintering process parameters to complete the fabrication of the multi-chip module heat dissipation structure based on the HTCC-AlN composite substrate. These modifications and changes should be regarded as belonging to the protection scope of the present invention.
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| CN201510452002.9ACN105304577B (en) | 2015-07-28 | 2015-07-28 | The preparation method of multi-chip module cooling encapsulation ceramic composite substrate |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510452002.9ACN105304577B (en) | 2015-07-28 | 2015-07-28 | The preparation method of multi-chip module cooling encapsulation ceramic composite substrate |
| Publication Number | Publication Date |
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| CN105304577A CN105304577A (en) | 2016-02-03 |
| CN105304577Btrue CN105304577B (en) | 2017-12-08 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201510452002.9AActiveCN105304577B (en) | 2015-07-28 | 2015-07-28 | The preparation method of multi-chip module cooling encapsulation ceramic composite substrate |
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| CN (1) | CN105304577B (en) |
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