技术领域technical field
本发明涉及半导体技术领域，尤其涉及一种影像传感芯片封装结构及其封装方法。The invention relates to the technical field of semiconductors, in particular to an image sensor chip packaging structure and a packaging method thereof.
背景技术Background technique
目前，晶圆级封装(WaferLevelPackaging)技术是对整片晶圆进行测试封装后再进行切割，得到单个成品芯片的技术，其逐渐取代引线键合封装技术，成为封装的主流技术。At present, wafer level packaging (WaferLevelPackaging) technology is the technology of testing and packaging the whole wafer and then cutting it to obtain a single finished chip. It gradually replaces the wire bonding packaging technology and becomes the mainstream technology of packaging.
在影像传感器的封装中，也多采用晶圆级封装技术，如图1所示，为现有传统的影像传感器封装结构，该结构包括影像传感芯片10和盖板20，影像传感芯片的第一表面上设置有影像传感区12和焊垫14，盖板20设置在影像传感区12上方，用于保护影像传感区，通常的，盖板20由玻璃基板22和玻璃基板22上的支撑结构24组成，支撑结构24围成空腔，在支撑结构24键合到影像传感区所在的第一表面后，将影像传感区12罩在空腔中，起到保护影像传感区的作用。在第二表面上设置有贯通至焊垫14的导孔以及与导孔电连接的焊接凸点22，从而，实现与外部的电连接，导孔包括通孔中及通孔侧面的第二表面上的绝缘层16、电连线层18和阻焊层22，焊接凸点22形成在导孔侧面的电连线层18上，从而实现外部与焊垫的电连接。In the packaging of image sensors, wafer-level packaging technology is often used. As shown in FIG. 1, it is an existing traditional image sensor packaging structure. An image sensing area 12 and a welding pad 14 are arranged on the first surface, and a cover plate 20 is arranged above the image sensing area 12 for protecting the image sensing area. Generally, the cover plate 20 is composed of a glass substrate 22 and a glass substrate 22 The support structure 24 is composed of the support structure 24, and the support structure 24 forms a cavity. After the support structure 24 is bonded to the first surface where the image sensing area is located, the image sensing area 12 is covered in the cavity to protect the image sensing area. The role of the sensory zone. On the second surface, a guide hole penetrating to the pad 14 and a welding bump 22 electrically connected to the guide hole are provided, so as to realize electrical connection with the outside. The guide hole includes the second surface in the through hole and on the side of the through hole On the insulating layer 16, the electrical connection layer 18 and the solder resist layer 22, the welding bump 22 is formed on the electrical connection layer 18 on the side of the guide hole, so as to realize the electrical connection between the outside and the welding pad.
然而，在该结构中，绝缘层16多采用有机材料形成，有机材料形成的绝缘层在通孔的边角处较为薄弱，尤其是对于阶梯形的通孔(图未视出)，容易在边角处产生缺陷。此外，在后续形成电连线层时，需要通过镭射进行绝缘层的开口，开口后绝缘层和衬垫都被击穿，这样，如图1所示，形成的电连线层18与衬垫14侧壁形成电连接，这种连接的接触面积较小，在晶片受力时，容易产生断裂，甚至失效。However, in this structure, the insulating layer 16 is mostly formed of organic materials, and the insulating layer formed of organic materials is relatively weak at the corners of the through holes, especially for stepped through holes (not shown in the figure), it is easy to Defects occur at the corners. In addition, when the electrical wiring layer is subsequently formed, the insulating layer needs to be opened by laser, and the insulating layer and the liner are all broken down after the opening. In this way, as shown in FIG. 1, the formed electrical wiring layer 18 and the liner 14 The side wall forms an electrical connection, and the contact area of this connection is small, and it is easy to break or even fail when the wafer is stressed.
发明内容Contents of the invention
有鉴于此，本发明的第一方面提供了一种影像传感芯片封装结构，以降低影像传感芯片封装结构的缺陷。In view of this, the first aspect of the present invention provides an image sensor chip package structure to reduce defects of the image sensor chip package structure.
为解决上述问题，本发明实施例提供了一种影像传感芯片封装结构，包括：In order to solve the above problems, an embodiment of the present invention provides an image sensor chip packaging structure, including:
影像传感芯片，其具有相对的第一表面和第二表面，在第一表面上设置有影像传感区以及位于影像传感区周围的焊垫；An image sensor chip, which has a first surface and a second surface opposite to each other, an image sensing area and welding pads located around the image sensing area are arranged on the first surface;
从第二表面贯通至焊垫的通孔；a through hole penetrating from the second surface to the pad;
设置于通孔侧壁以及第二表面上的钝化层；a passivation layer disposed on the sidewall of the through hole and the second surface;
设置于通孔底面以及钝化层上的电连线层；An electrical connection layer disposed on the bottom surface of the through hole and the passivation layer;
电连接于电连线层的焊接凸点；Soldering bumps electrically connected to the electrical wiring layer;
位于电连线层与钝化层之间的缓冲层。A buffer layer between the electrical wiring layer and the passivation layer.
可选的，还包括：遮光层，位于第二表面上且覆盖所述影像传感区。Optionally, it further includes: a light shielding layer located on the second surface and covering the image sensing area.
可选的，所述遮光层的材质为金属。Optionally, the material of the light-shielding layer is metal.
可选的，所述金属为经过表面黑化处理的Al。Optionally, the metal is Al that has undergone surface blackening treatment.
可选的，所述缓冲层的材质为感光胶。Optionally, the buffer layer is made of photosensitive glue.
可选的，还包括覆盖电连线层并填充通孔的阻焊层。Optionally, a solder resist layer covering the electrical wiring layer and filling the through hole is also included.
可选的，还包括与所述影像传感芯片对位压合的保护盖板。Optionally, it also includes a protective cover that is aligned and pressed together with the image sensor chip.
可选的，所述保护盖板为光学玻璃，光学玻璃的至少一个表面上设置有防反射层。Optionally, the protective cover is optical glass, and at least one surface of the optical glass is provided with an anti-reflection layer.
可选的，所述缓冲层的厚度范围为5-25微米。Optionally, the buffer layer has a thickness in the range of 5-25 microns.
此外，本发明还提供了一种影像传感芯片的封装方法，包括：In addition, the present invention also provides a packaging method for an image sensor chip, including:
提供晶圆，具有多颗阵列排布的影像传感芯片，其具有相对的第一表面和第二表面，影像传感芯片具有影像传感区以及位于影像传感区周围的焊垫，所述影像传感区以及焊垫位于第一表面；A wafer is provided, which has a plurality of image sensor chips arranged in an array, and has opposite first and second surfaces, the image sensor chip has an image sensing area and bonding pads located around the image sensing area, the The image sensing area and the welding pad are located on the first surface;
提供保护盖板，并将其与所述晶圆对位压合；providing a protective cover and pressing it against the wafer;
从第二表面形成贯通至焊垫的通孔；forming a via hole through the second surface to the pad;
在通孔侧壁以及通孔两侧的第二表面上形成钝化层；forming a passivation layer on the sidewall of the through hole and the second surface on both sides of the through hole;
在第二表面上的钝化层上形成缓冲层；forming a buffer layer on the passivation layer on the second surface;
形成覆盖通孔内壁及缓冲层的电连线层；forming an electrical connection layer covering the inner wall of the through hole and the buffer layer;
在电连线层上形成与所述电连线层电连接的焊接凸点。Welding bumps electrically connected to the electrical wiring layer are formed on the electrical wiring layer.
可选的，在形成通孔之前，还包括：在第二表面对应影像传感区的位置形成遮光层。Optionally, before forming the through hole, the method further includes: forming a light-shielding layer on the second surface at a position corresponding to the image sensing area.
可选的，形成遮光层的步骤包括：Optionally, the step of forming the shading layer includes:
在第二表面上溅射金属层，并进行刻蚀，以在对应影像传感区的位置形成遮光层。A metal layer is sputtered on the second surface and etched to form a light-shielding layer at a position corresponding to the image sensing area.
可选的，所述金属层为Al，在溅射Al的金属层之后，还进行表面黑化处理，而后进行刻蚀。Optionally, the metal layer is Al, and after the metal layer of Al is sputtered, the surface is blackened and then etched.
可选的，在覆盖电连线层之后，形成焊接凸点之前，还包括：Optionally, after covering the electrical wiring layer and before forming solder bumps, further include:
形成阻焊层，并在第二表面上的阻焊层中形成开口；forming a solder mask and forming an opening in the solder mask on the second surface;
在开口中形成焊接凸点。Solder bumps are formed in the openings.
可选的，所述保护盖板为光学玻璃，光学玻璃的至少一个表面上设置有防反射层。Optionally, the protective cover is optical glass, and at least one surface of the optical glass is provided with an anti-reflection layer.
可选的，在通孔侧壁以及通孔两侧的第二表面上形成钝化层的步骤包括：Optionally, the step of forming a passivation layer on the sidewall of the through hole and the second surface on both sides of the through hole includes:
沉积钝化层；depositing a passivation layer;
刻蚀去除通孔底部的钝化层。Etch to remove the passivation layer at the bottom of the via.
可选的，所述缓冲层的材质为感光胶，在第二表面上的钝化层上形成缓冲层的步骤包括：Optionally, the material of the buffer layer is photosensitive glue, and the step of forming the buffer layer on the passivation layer on the second surface includes:
在第二表面上旋涂感光胶；Spin-coat photoresist on the second surface;
通过曝光显影工艺形成缓冲层。The buffer layer is formed through an exposure and development process.
本发明实施例提供的影像传感芯片封装结构及其封装方法，在电连线层与芯片间采用钝化层作为绝缘层，并在焊接凸点下的电连线层与钝化层之间设置缓冲层，钝化层具有较好的阶梯覆盖性，在通孔的边角处也具有好的覆盖性，并通过缓冲层释放形成焊接凸点时回流焊对钝化层的冲击力。此外，对于钝化层，在去除通孔底部的钝化层时，可以通过刻蚀的方法去除而暴露衬垫，这样，后续形成的电连线层与衬垫为面接触，具有更大的接触面积，提高二者的结合力，从整体上进一步降低了影像传感芯片封装结构的潜在缺陷。In the image sensor chip packaging structure and packaging method provided by the embodiments of the present invention, a passivation layer is used as an insulating layer between the electrical wiring layer and the chip, and a passivation layer is used between the electrical wiring layer and the passivation layer under the welding bump. The buffer layer is set, and the passivation layer has good step coverage, and also has good coverage at the corners of the through holes, and the impact force of reflow soldering on the passivation layer when forming solder bumps is released through the buffer layer. In addition, for the passivation layer, when removing the passivation layer at the bottom of the via hole, it can be removed by etching to expose the liner, so that the subsequently formed electrical wiring layer is in surface contact with the liner, and has a greater The contact area is improved, the bonding force between the two is improved, and the potential defects of the image sensor chip packaging structure are further reduced as a whole.
附图说明Description of drawings
图1示出了现有技术的影像传感芯片封装结构的剖面结构示意图；FIG. 1 shows a schematic cross-sectional structure diagram of an image sensor chip packaging structure in the prior art;
图2示出了根据本发明一实施例的影像传感芯片封装结构的剖面结构示意图；FIG. 2 shows a schematic cross-sectional structure diagram of an image sensor chip packaging structure according to an embodiment of the present invention;
图3示出了根据发明另一实施例的影像传感芯片封装结构的剖面结构示意图；FIG. 3 shows a schematic cross-sectional structure diagram of an image sensor chip package structure according to another embodiment of the invention;
图4A至图13示出了本发明实施例的影像传感芯片的封装方法中所形成的中间结构的结构示意图。4A to 13 are schematic structural diagrams of the intermediate structure formed in the packaging method of the image sensor chip according to the embodiment of the present invention.
具体实施方式detailed description
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
其次，本发明结合示意图进行详细描述，在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。另外，以下描述的第一特征在第二特征之“上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production. Additionally, configurations described below in which a first feature is "on" a second feature may include embodiments where the first and second features are formed in direct contact, and may include additional features formed between the first and second features. For example, such that the first and second features may not be in direct contact.
为了降低影像传感芯片封装结构的缺陷，尤其是通孔的边角处薄弱的缺陷，本发明提出了一种影像传感芯片封装结构，参考图2和图3所示，其包括：In order to reduce the defects of the packaging structure of the image sensor chip, especially the weak defects at the corners of the through holes, the present invention proposes a packaging structure of the image sensor chip, as shown in FIG. 2 and FIG. 3 , which includes:
影像传感芯片100，其具有相对的第一表面1001和第二表面1002，在第一表面1001上设置有影像传感区102以及位于影像传感区102周围的焊垫104；An image sensor chip 100, which has an opposite first surface 1001 and a second surface 1002, on the first surface 1001 is provided with an image sensing area 102 and pads 104 around the image sensing area 102;
从第二表面1002贯通至焊垫1004的通孔105；A through hole 105 penetrating from the second surface 1002 to the pad 1004;
设置于通孔105侧壁以及第二表面1002上的钝化层106；a passivation layer 106 disposed on the sidewall of the through hole 105 and the second surface 1002;
设置于通孔105底面以及钝化层106上的电连线层108；An electrical connection layer 108 disposed on the bottom surface of the through hole 105 and the passivation layer 106;
电连接于电连线层108的焊接凸点122；Solder bumps 122 electrically connected to the electrical wiring layer 108;
位于电连线层108与钝化层106之间的缓冲层107。The buffer layer 107 is located between the electrical connection layer 108 and the passivation layer 106 .
在本发明中，在电连线层与芯片间采用钝化层作为绝缘层，并在焊接凸点下的电连线层与钝化层之间设置缓冲层，钝化层具有较好的阶梯覆盖性，在通孔的边角处也具有好的覆盖性，并通过缓冲层释放形成焊接凸点时回流焊对钝化层的冲击力。此外，对于钝化层，在去除通孔底部的钝化层时，可以通过刻蚀的方法去除而暴露衬垫，这样，后续形成的电连线层与衬垫为面接触，具有更大的接触面积，提高二者的结合力，从整体上进一步降低了影像传感芯片的潜在缺陷。In the present invention, a passivation layer is used as an insulating layer between the electrical wiring layer and the chip, and a buffer layer is set between the electrical wiring layer and the passivation layer under the welding bump, and the passivation layer has a better step Coverage, also has good coverage at the corners of the through holes, and releases the impact of reflow soldering on the passivation layer when forming solder bumps through the buffer layer. In addition, for the passivation layer, when removing the passivation layer at the bottom of the via hole, it can be removed by etching to expose the liner, so that the subsequently formed electrical wiring layer is in surface contact with the liner, and has a greater The contact area improves the bonding force between the two, and further reduces the potential defects of the image sensor chip as a whole.
在本发明实施例中，该影像传感芯片封装结构可以为形成在完成导孔和焊接凸点加工而尚未进行切割的结构，也可以为经过切割之后的单个成品芯片的结构。In the embodiment of the present invention, the package structure of the image sensor chip may be a structure that has not been diced after the processing of the guide holes and welding bumps is completed, or it may be a structure of a single finished chip after dicing.
对于影像传感芯片，该芯片至少形成有影像传感区和焊垫，在本发明实施例中，在影像传感芯片的第一表面上设置有影像传感区102和位于影像传感区102周围的焊垫104，所述影像传感区102用于接收外界光线并转换为电学信号，所述影像传感区102内至少形成有影像传感器单元，还可以进一步形成有与影像传感器单元相连接的关联电路，如用于驱动芯片的驱动单元(图未示出)、获取感光区电流的读取单元(图未示出)和处理感光区电流的处理单元(图未示出)等。For an image sensing chip, the chip is formed with at least an image sensing region and a bonding pad. In an embodiment of the present invention, an image sensing region 102 and an Surrounding the pads 104, the image sensing area 102 is used to receive external light and convert it into an electrical signal. At least an image sensor unit is formed in the image sensing area 102, and an image sensor unit connected to the image sensor unit can also be further formed. Associated circuits, such as a driving unit (not shown) for driving the chip, a reading unit (not shown) for obtaining the current in the photosensitive area, and a processing unit (not shown) for processing the current in the photosensitive area.
当然，根据具体的设计需求，在该影像传感芯片上还可以设置有其他的部件，由于这些部件与本发明的发明点并不密切相关，在此不做进一步的详细描述。Of course, according to specific design requirements, other components may also be provided on the image sensor chip, and since these components are not closely related to the inventive point of the present invention, no further detailed description will be made here.
通常地，为了便于布线，影像传感区102位于单个芯片单元的中间位置，焊垫104呈矩形分布，位于影像传感区102的四周且位于单个芯片单元单元的边缘位置，每一个侧边上可以形成有若干个焊垫104，焊垫104为影像传感区内器件与外部电路的输入输出端口，可以将影像传感区102的电学信号传出到外部电路，焊垫的材料为导电材料，可以为金属材料，例如Al、Au和Cu等。Generally, for the convenience of wiring, the image sensing area 102 is located in the middle of a single chip unit, and the pads 104 are distributed in a rectangular shape, located around the image sensing area 102 and at the edge of a single chip unit, on each side Several welding pads 104 can be formed, and the welding pads 104 are the input and output ports of the device in the image sensing area and the external circuit, and can transmit the electrical signal of the image sensing area 102 to the external circuit, and the material of the welding pad is a conductive material , can be a metal material, such as Al, Au, and Cu.
可以理解的是，根据不同的设计和需求，可以对影像传感区和焊垫的位置以及焊垫的数量做出调整，例如，可以将焊垫仅设置在影像传感区的一侧或者某两侧。It can be understood that, according to different designs and requirements, the positions of the image sensing area and welding pads as well as the number of welding pads can be adjusted. For example, the welding pads can be set only on one side of the image sensing area or a certain sides.
在本发明实施例中，还包括与影像传感区102对位压合的保护盖板200，保护盖板200为用于保护影像传感区102的部件，其具有容置影像传感区的空间，从而，在影像传感区上形成保护罩，在保护影像传感区不受破坏的同时，不影响光线进入影像传感区。在本发明的实施例中，所述保护盖板200为光学玻璃，光学玻璃上设置有支撑结构220，通过支撑结构220与影像传感区102对位压合，使得支撑结构220之间围成的空腔将影像传感区102容纳于其中，形成一个玻璃罩来保护影像传感区102。可以理解的是，保护盖板200也可以采用其他的结构，如采用不透光的基板来形成，而在基板与影像传感区对应的区域设置开口或具有遮挡的透光开口。In the embodiment of the present invention, it also includes a protective cover 200 that is aligned and pressed against the image sensing area 102. The protective cover 200 is a component used to protect the image sensing area 102, and it has a seat for accommodating the image sensing area. Space, so that a protective cover is formed on the image sensing area, while protecting the image sensing area from being damaged, it does not affect light entering the image sensing area. In an embodiment of the present invention, the protective cover 200 is optical glass, and a support structure 220 is arranged on the optical glass, and the support structure 220 is aligned and pressed with the image sensing area 102, so that the support structures 220 enclose a The cavity of the image sensing area 102 is accommodated therein, forming a glass cover to protect the image sensing area 102 . It can be understood that the protective cover 200 may also adopt other structures, such as using an opaque substrate to form an opening or a shielded light-transmitting opening in the area of the substrate corresponding to the image sensing area.
然而，对于光学玻璃的保护盖板，会存在镜面反射的缺陷，减少进入到影像传感区的光线，进而影响成像的品质，为此，参考图3所示，在本发明实施例中，在光学玻璃的保护盖板200的表面上设置有防反射层201，该防反射层201可以设置在光学玻璃朝向影像传感区102的表面上或与该表面相对的表面上，也可以在光学玻璃的两个表面上都设置该防反射层201，该防反射层至少与覆盖影像传感区102对应的区域，可以根据所选择的光学玻璃来选择合适的防反射涂层的材质。通过在光学玻璃的表面上设置防反射层，减少反射光，增加进入到影像传感区的光线，进而提高成像的品质。However, for the protective cover of optical glass, there will be defects of specular reflection, which reduces the light entering the image sensing area, thereby affecting the quality of imaging. For this reason, as shown in FIG. 3, in the embodiment of the present invention, in An anti-reflection layer 201 is provided on the surface of the protective cover plate 200 of the optical glass, and the anti-reflection layer 201 can be arranged on the surface of the optical glass facing the image sensing region 102 or on the surface opposite to the surface, or on the surface of the optical glass The anti-reflection layer 201 is provided on both surfaces of the body, and the anti-reflection layer covers at least the area corresponding to the image sensing area 102, and a suitable anti-reflection coating material can be selected according to the selected optical glass. By setting an anti-reflection layer on the surface of the optical glass, the reflected light is reduced, the light entering the image sensing area is increased, and the imaging quality is improved.
在本发明中，通过通孔105实现焊垫104与外部电路的电连接，从而，将影像传感区102的电信号引出至外部电路。In the present invention, the electrical connection between the welding pad 104 and the external circuit is realized through the through hole 105 , so that the electrical signal of the image sensing area 102 is drawn out to the external circuit.
在本发明的实施例中，如图2和图3所示，通过以下部件实现焊垫104与外部电路的电连接：从第二表面1002贯通至焊垫1004的通孔105；设置于通孔105侧壁以及第二表面1002上的钝化层106；设置于通孔105底面以及钝化层106上的电连线层108；电连接于电连线层108的焊接凸点122。此外，位于电连线层108与钝化层106之间设置缓冲层107，以缓解焊接凸点工艺中对钝化层的冲击力。In the embodiment of the present invention, as shown in FIG. 2 and FIG. 3 , the electrical connection between the pad 104 and the external circuit is realized through the following components: a through hole 105 penetrating from the second surface 1002 to the pad 1004; The passivation layer 106 on the sidewall of 105 and the second surface 1002 ; the electrical connection layer 108 disposed on the bottom surface of the through hole 105 and the passivation layer 106 ; the welding bump 122 electrically connected to the electrical connection layer 108 . In addition, a buffer layer 107 is disposed between the electrical connection layer 108 and the passivation layer 106 to relieve the impact force on the passivation layer during the solder bump process.
其中，通孔105贯穿影像传感芯片100至焊点104，使得通孔105暴露出焊垫104，通孔105可以贯穿至焊垫104的表面，也可以进一步贯穿至部分厚度的焊垫104中，所述通孔105可以为倒梯形或阶梯形孔，即通孔的截面为倒梯形或者阶梯形。Wherein, the through hole 105 runs through the image sensor chip 100 to the welding point 104, so that the through hole 105 exposes the welding pad 104, and the through hole 105 can penetrate to the surface of the welding pad 104, and can further penetrate into the welding pad 104 with a partial thickness. , the through hole 105 may be an inverted trapezoidal or stepped hole, that is, the cross section of the through hole is an inverted trapezoidal or stepped shape.
钝化层106为电连线层108的电绝缘层，在本发明实施例中，钝化层106为氧化物或氮化物等无机介质材料，如氧化硅、氮化硅或氮氧化硅或他们的叠层等，钝化层作为电连线层的绝缘层，具有较好的阶梯覆盖性，在通孔的边角处也具有好的覆盖性，避免通孔边角处薄弱而导致的缺陷。The passivation layer 106 is an electrical insulation layer of the electrical wiring layer 108. In an embodiment of the present invention, the passivation layer 106 is an inorganic dielectric material such as oxide or nitride, such as silicon oxide, silicon nitride or silicon oxynitride or their The passivation layer, as the insulating layer of the electrical connection layer, has good step coverage, and also has good coverage at the corners of the through holes, avoiding defects caused by weak corners of the through holes .
所述电连线层108覆盖上述通孔内壁，并延伸至通孔两侧的第二表面之上，便于与焊接凸点122连接，电连线层108的材料为导电材料，可以为金属材料，例如Al、Au和Cu等。The electrical connection layer 108 covers the inner wall of the above-mentioned through hole and extends to the second surface on both sides of the through hole to facilitate connection with the solder bump 122. The material of the electrical connection layer 108 is a conductive material, which can be a metal material , such as Al, Au and Cu, etc.
由于采用了钝化层106作为电绝缘层，在进行焊接凸点的加工工艺中，会对钝化层造成冲击，为此，在本发明中，在焊接凸点122下方的电连线层108与钝化层106之间设置缓冲层107，缓冲层107用于释放焊接凸点对钝化层造成的冲击力，所述缓冲层107的材料可以为有机高分子光刻胶，例如，环氧树脂或丙烯酸树脂等，缓冲层107的厚度可以为5-25微米。此外，更优选地，缓冲层107可以选择感光胶，这样，缓冲层除了缓解对钝化层的冲击力之外，还具有吸光作用，可以避免光线从第二表面进入影像传感区。Since the passivation layer 106 is used as the electrical insulation layer, the passivation layer will be impacted during the process of soldering bumps. For this reason, in the present invention, the electrical connection layer 108 below the soldering bumps 122 A buffer layer 107 is arranged between the passivation layer 106, and the buffer layer 107 is used to release the impact force caused by the welding bump to the passivation layer. The material of the buffer layer 107 can be an organic polymer photoresist, for example, epoxy Resin or acrylic resin, etc., the thickness of the buffer layer 107 may be 5-25 microns. In addition, more preferably, the buffer layer 107 can be photosensitive glue, so that the buffer layer not only alleviates the impact on the passivation layer, but also has a light absorption effect, which can prevent light from entering the image sensing area from the second surface.
进一步的，在另一些实施例中，可以在第二表面上设置遮光层101，该遮光层101覆盖所述影像传感区102，如图3所示，遮光层101避免光线特别是红外光线透过晶片进入到影像传感区102，所述遮光层101可以为金属材料，金属材料例如可以为铝、铝合金或者其他适宜的金属材料，使得光线在其表面形成镜面反射，避免光线进入影像传感区，更优地，该金属材料可以经过黑化处理的金属Al，黑化处理的Al进一步具有好的吸光作用。Further, in some other embodiments, a light-shielding layer 101 may be provided on the second surface, and the light-shielding layer 101 covers the image sensing region 102, as shown in FIG. 3 , the light-shielding layer 101 prevents light, especially infrared light, from The light-shielding layer 101 can be made of a metal material, such as aluminum, aluminum alloy or other suitable metal materials, so that the light forms a specular reflection on its surface and prevents the light from entering the image sensor area. In the sensitive area, more preferably, the metal material can be blackened metal Al, and the blackened Al further has a good light absorption effect.
此外，在上述待影像传感芯片上形成有阻焊层120，阻焊层120覆盖电连线层108并填充通孔，阻焊层在焊接凸点工艺中对其他层起到绝缘保护层的作用，阻焊层例如可以为防焊感光油墨，阻焊层可以采用与缓冲层107相同的介质材料，以进一步释放焊接凸点对钝化层造成的冲击力并保护影像传感芯片。In addition, a solder resist layer 120 is formed on the image sensor chip to be described above. The solder resist layer 120 covers the electrical connection layer 108 and fills the through holes. The solder resist layer acts as an insulating protective layer for other layers in the welding bump process. For example, the solder resist layer can be solder resist photosensitive ink, and the solder resist layer can use the same dielectric material as the buffer layer 107 to further release the impact force caused by solder bumps on the passivation layer and protect the image sensor chip.
所述焊接凸点122电连接于电连接层108，本实施例中，设置在通孔两侧第二表面1002上的电连线层108上，与电连线层接触连接，焊接凸点用于与外部电路的电连接，所述焊接凸点122可以为焊球、金属柱等连接结构，材料可以为铜、铝、金、锡或铅等金属材料。The welding bump 122 is electrically connected to the electrical connection layer 108. In this embodiment, it is arranged on the electrical connection layer 108 on the second surface 1002 on both sides of the through hole, and is in contact with the electrical connection layer. It is used for welding the bump. For electrical connection with external circuits, the solder bumps 122 may be connection structures such as solder balls and metal pillars, and the materials may be metal materials such as copper, aluminum, gold, tin or lead.
以上对本发明的影像传感芯片封装结构的实施例进行了详细的描述，此外，本发明还提供了上述封装结构的封装方法，以下将结合具体的实施例，对该封装方法进行详细的描述。The embodiment of the packaging structure of the image sensor chip of the present invention has been described in detail above. In addition, the present invention also provides a packaging method of the above packaging structure. The packaging method will be described in detail below in conjunction with specific embodiments.
首先，提供晶圆1000，具有多颗阵列排布的影像传感芯片，其具有相对的第一表面1001和第二表面1002，影像传感芯片100具有影像传感区102以及位于影像传感区周围的焊垫104，所述影像传感区102以及焊垫104位于第一表面1002，参考图4和图4A所示，其中，图4A为晶圆1000的俯视结构示意图，图4及后续相关附图为一个影像传感芯片100单元沿AA1向的截面结构示意图。Firstly, a wafer 1000 is provided, which has a plurality of image sensor chips arranged in an array, and has a first surface 1001 and a second surface 1002 opposite to each other. The image sensor chip 100 has an image sensing region 102 and a The surrounding pads 104, the image sensing area 102 and the pads 104 are located on the first surface 1002, as shown in FIG. 4 and FIG. The accompanying drawing is a schematic cross-sectional structure diagram of an image sensor chip 100 unit along the direction AA1.
本实施例中，所述晶圆1000为半导体衬底，所述半导体衬底可以为体衬底或包括半导体材料的叠层衬底，如Si衬底、Ge衬底、SiGe衬底或SOI等。In this embodiment, the wafer 1000 is a semiconductor substrate, and the semiconductor substrate may be a bulk substrate or a stacked substrate including semiconductor materials, such as Si substrate, Ge substrate, SiGe substrate or SOI, etc. .
在本发明实施例中，在所述晶圆1000上形成有多个影像传感芯片100，这些影像传感芯片100呈阵列排布，在相邻的影像传感芯片100之间设置有切割道区域1100，用于后续工艺中对所述晶圆1000进行切割，从而形成独立的影像传感芯片封装结构。In the embodiment of the present invention, a plurality of image sensor chips 100 are formed on the wafer 1000, these image sensor chips 100 are arranged in an array, and dicing lines are provided between adjacent image sensor chips 100 The area 1100 is used for cutting the wafer 1000 in subsequent processes, so as to form an independent image sensor chip packaging structure.
在本发明实施例中，所述影像传感芯片具有影像传感区102以及位于影像传感区周围的焊垫104，所述影像传感区102以及焊垫104位于第一表面1002，所述影像传感区102用于接收外界光线并转换为电学信号，所述影像传感区102内至少形成有影像传感器单元，影像传感器单元例如可以由多个光电二极管阵列排布形成，还可以进一步形成有与影像传感器单元相连接的关联电路，如用于驱动芯片的驱动单元(图未示出)、获取感光区电流的读取单元(图未示出)和处理感光区电流的处理单元(图未示出)等。In an embodiment of the present invention, the image sensor chip has an image sensing region 102 and a bonding pad 104 located around the image sensing region, the image sensing region 102 and the bonding pad 104 are located on the first surface 1002, the The image sensing area 102 is used to receive external light and convert it into an electrical signal. At least an image sensor unit is formed in the image sensing area 102. The image sensor unit can be formed by, for example, a plurality of photodiode arrays, or can be further formed There are associated circuits connected to the image sensor unit, such as a driving unit (not shown in the figure) for driving the chip, a reading unit (not shown in the figure) for obtaining the current in the photosensitive area, and a processing unit (not shown in the figure) for processing the current in the photosensitive area. not shown), etc.
接着，提供保护盖板200，并将保护盖板200与所述晶圆1000对位压合，参考图5-6所示。Next, a protective cover 200 is provided, and the protective cover 200 is aligned and pressed against the wafer 1000 , as shown in FIGS. 5-6 .
本实施例中，如图5所示，所述保护盖板200为光学玻璃，光学玻璃上设置有支撑结构220，通过支撑结构220与影像传感区102对位压合，使得支撑结构220之间围成的空腔将影像传感区102容纳于其中，形成一个玻璃罩来保护影像传感区102。所述光学玻璃可以为无机玻璃、有机玻璃或者其他具有特定强度的透光材料，光学玻璃的厚度可以为300μm～500μm。In this embodiment, as shown in FIG. 5 , the protective cover 200 is optical glass, and a supporting structure 220 is arranged on the optical glass. The cavity enclosed between them accommodates the image sensing area 102 and forms a glass cover to protect the image sensing area 102 . The optical glass may be inorganic glass, organic glass or other light-transmitting materials with specific strength, and the thickness of the optical glass may be 300 μm˜500 μm.
所述支撑结构220通常为介质材料，例如可以为氧化硅、氮化硅、氮氧化硅或感光胶等。在一个具体的实施例中，支撑结构的材料为感光胶，首先，可以在光学玻璃的表面上旋涂感光胶，而后进行曝光显影工艺，从而，在感光玻璃上形成支撑结构220。The supporting structure 220 is generally a dielectric material, such as silicon oxide, silicon nitride, silicon oxynitride, or photosensitive glue. In a specific embodiment, the material of the support structure is photosensitive glue. First, the photosensitive glue can be spin-coated on the surface of the optical glass, and then the exposure and development process is performed, thereby forming the support structure 220 on the photosensitive glass.
由于该保护盖板采用光学玻璃形成，会存在镜面反射的缺陷，减少进入到影像传感区的光线，进而影响成像的品质，为此，参考图5所示，在形成支撑结构之前，可以先在光学玻璃的表面上设置防反射层201，该防反射层201可以设置在光学玻璃朝向影像传感区102的表面上或与该表面相对的表面上，也可以在光学玻璃的两个表面上都设置该防反射层201，可以通过喷涂的方式在玻璃基板上形成防反射层，该防反射层至少覆盖影像传感区102对应的区域，可以根据所选择的玻璃基板来选择合适的防反射涂层的材质。Since the protective cover is formed of optical glass, there will be defects of specular reflection, which will reduce the light entering the image sensing area, thereby affecting the quality of imaging. For this reason, as shown in Figure 5, before forming the support structure, you can first An anti-reflection layer 201 is arranged on the surface of the optical glass, and the anti-reflection layer 201 can be arranged on the surface of the optical glass facing the image sensing area 102 or on the surface opposite to the surface, or on both surfaces of the optical glass The anti-reflection layer 201 is provided, and the anti-reflection layer can be formed on the glass substrate by spraying. The anti-reflection layer at least covers the area corresponding to the image sensing area 102, and a suitable anti-reflection layer can be selected according to the selected glass substrate. The material of the coating.
在该实施例中，如图6所示，将该保护盖板200与晶圆1000的第一表面相结合，使得支撑结构220与影像传感区102对位压合，可以通过在支撑结构220和/或晶圆1000的第一表面之间设置粘合层(图未示出)，来实现保护盖板200与晶圆1000的对位压合，例如，可以在支撑结构220的表面和/或晶圆1000的第一表面的相应位置处，通过喷涂、旋涂或者黏贴的工艺设置粘合层，再将二者进行压合，通过所述粘合层实现相结合。所述粘合层既可以实现粘接作用，又可以起到绝缘和密封作用。所述粘合层可以为高分子粘接材料，例如硅胶、环氧树脂、苯并环丁烯等聚合物材料。In this embodiment, as shown in FIG. 6 , the protective cover 200 is combined with the first surface of the wafer 1000 so that the support structure 220 is aligned and pressed against the image sensing area 102 , and the support structure 220 can and/or an adhesive layer (not shown) is set between the first surface of the wafer 1000 to realize the alignment and pressing of the protective cover plate 200 and the wafer 1000, for example, it may be on the surface of the support structure 220 and/or Or at corresponding positions on the first surface of the wafer 1000, an adhesive layer is provided by spray coating, spin coating or pasting process, and then the two are pressed together, and the combination is realized through the adhesive layer. The adhesive layer can not only realize the bonding function, but also play the role of insulation and sealing. The adhesive layer may be a polymer adhesive material, such as polymer materials such as silica gel, epoxy resin, and benzocyclobutene.
而后，通过通孔105工艺实现焊垫104与外部电路的电连接，从而，将影像传感区102的电信号引出至外部电路。Then, the electrical connection between the welding pad 104 and the external circuit is realized through the process of the through hole 105 , so that the electrical signal of the image sensing region 102 is drawn out to the external circuit.
具体的，首先，从而第二表面1002对晶圆1000进行减薄，以便于后续通孔的刻蚀，可以采用机械化学研磨、化学机械研磨工艺或二者的结合进行减薄。Specifically, firstly, the second surface 1002 is used to thin the wafer 1000 so as to facilitate subsequent etching of through holes, and the thinning can be performed by mechanochemical polishing, chemical mechanical polishing or a combination of the two.
接着，为了避免或者减少光线特别是红外光线从第二表面进入到影像传感区102，如图7所示，可以至少在第二表面对应影像传感区102的设置遮光层101。所述遮光层101可以为金属材料，例如可以为铝、铝合金或者其他适宜的金属材料。在一个优选的实施例中，首先，可以通过溅射工艺在晶圆1000的第二表面上形成金属层，如铝金属；接着，对该金属层进行黑化处理，可以通过酸碱药水对所述金属层进行黑化，例如，可以采用含硫的碱溶液对所述铝金属层进行处理，黑化后的金属层的厚度可以为1μm～10μm，优选地，可以为5μm，6μm等在所述铝金属层上形成黑色的硫化物膜层，提高所述铝材料层的遮光效果；而后，对金属材料层进行图形化，仅在第二表面上影像传感区102对应的位置形成遮光层101，该遮光层也可以较影像传感区102具有更大的面积，以完全遮盖影像传感区，起到更好的遮光效果。Next, in order to avoid or reduce light, especially infrared light, from entering the image sensing area 102 from the second surface, as shown in FIG. The light-shielding layer 101 may be a metal material, such as aluminum, aluminum alloy or other suitable metal materials. In a preferred embodiment, first, a metal layer, such as aluminum metal, can be formed on the second surface of the wafer 1000 by a sputtering process; blackening the metal layer, for example, the aluminum metal layer can be treated with a sulfur-containing alkaline solution, and the thickness of the blackened metal layer can be 1 μm to 10 μm, preferably 5 μm, 6 μm, etc. A black sulfide film layer is formed on the aluminum metal layer to improve the light-shielding effect of the aluminum material layer; then, the metal material layer is patterned to form a light-shielding layer only at the position corresponding to the image sensing area 102 on the second surface 101. The shading layer may also have a larger area than the image sensing area 102, so as to completely cover the image sensing area and achieve a better shading effect.
而后，从第二表面1002形成贯通至焊垫104的通孔105，如图8所示。具体的，可以利用刻蚀技术，如反应离子刻蚀或感应耦等离子体刻蚀等，对晶圆1000进行刻蚀，直至暴露出焊垫104，也可以进一步对焊垫104进行过刻蚀，即刻蚀掉部分厚度的焊垫，从而，形成暴露焊垫的通孔105。Then, a through hole 105 penetrating to the pad 104 is formed from the second surface 1002 , as shown in FIG. 8 . Specifically, the wafer 1000 can be etched using an etching technique, such as reactive ion etching or inductively coupled plasma etching, until the bonding pad 104 is exposed, and the bonding pad 104 can also be further over-etched. That is, a part of the thickness of the pad is etched away, thereby forming a through hole 105 exposing the pad.
接着，在通孔105侧壁以及通孔105两侧的第二表面1002上形成钝化层106，如图9所示。所述钝化层106可以为氧化物或氮化物的介质材料，如氧化硅、氮化硅或氮氧化硅或他们的叠层等。具体的，首先，沉积钝化材料层，如氧化硅，可以采用化学气相沉积的方法进行沉积，接着，进行掩膜工艺，在掩膜的掩蔽下进行刻蚀，将焊垫104之上的钝化材料层去除，从而，仅在通孔105侧壁以及通孔105两侧的第二表面1002上形成钝化层106。采用钝化层形成的电绝缘层具有更好的覆盖性，同时，可以采用刻蚀工艺选择性去除焊垫上的钝化层，从而，保证后续形成的电连线层与焊垫呈面接触，保证二者之间更好的接触和结合力。Next, a passivation layer 106 is formed on the sidewall of the through hole 105 and the second surface 1002 on both sides of the through hole 105 , as shown in FIG. 9 . The passivation layer 106 may be an oxide or nitride dielectric material, such as silicon oxide, silicon nitride or silicon oxynitride or their stacked layers. Specifically, first, deposit a passivation material layer, such as silicon oxide, which can be deposited by chemical vapor deposition, and then perform a mask process to etch under the mask to remove the passivation layer on the welding pad 104. The passivation material layer is removed, so that the passivation layer 106 is only formed on the sidewall of the through hole 105 and the second surface 1002 on both sides of the through hole 105 . The electrical insulation layer formed by the passivation layer has better coverage, and at the same time, the passivation layer on the pad can be selectively removed by etching, so as to ensure that the subsequently formed electrical connection layer is in surface contact with the pad, Ensure better contact and bonding between the two.
而后，在第二表面1002上的钝化层106上形成缓冲层107，如图10所示。所述缓冲层107的材料可以为有机高分子光刻胶，例如，环氧树脂或丙烯酸树脂等，更优选地，缓冲层可以为感光胶，可以通过旋涂或喷涂等工艺，形成缓冲材料层，而后，对缓冲材料层进行曝光和显影，从而，仅在第二表面1002上的钝化层106上形成缓冲层107，该缓冲层至少形成在第二表面上的焊接凸点区域，或者进一步沿将要形成的电连线层延伸，较焊接凸点区域缓冲层可以具有更大的面积。Then, a buffer layer 107 is formed on the passivation layer 106 on the second surface 1002 , as shown in FIG. 10 . The material of the buffer layer 107 can be an organic polymer photoresist, such as epoxy resin or acrylic resin, etc. More preferably, the buffer layer can be photosensitive adhesive, and the buffer material layer can be formed by processes such as spin coating or spray coating. , and then, the buffer material layer is exposed and developed, so that only the buffer layer 107 is formed on the passivation layer 106 on the second surface 1002, and the buffer layer is formed at least on the solder bump area on the second surface, or further Extending along the electrical connection layer to be formed, the buffer layer may have a larger area than that of the solder bump area.
接着，形成覆盖通孔105内壁及缓冲层107的电连线层108，如图11所示。所述电连线层的材料为导电材料，可以为金属材料薄膜，例如Al、Au和Cu等，可以通过RDL(重布线层)技术来形成电连线层或其他合适的沉积工艺，例如可以采用RDL技术进行Cu的电镀，并溅射Ti进行打底，形成电连线层108，RDL技术使得焊区位置重新布局，可以更好地满足焊区对焊接凸点最小间距的要求。Next, an electrical connection layer 108 covering the inner wall of the via hole 105 and the buffer layer 107 is formed, as shown in FIG. 11 . The material of the electrical wiring layer is a conductive material, which can be a thin film of metal material, such as Al, Au and Cu, etc., and the electrical wiring layer or other suitable deposition processes can be formed by RDL (redistribution layer) technology, for example, it can be The RDL technology is used for Cu electroplating, and Ti is sputtered for primer to form the electrical connection layer 108. The RDL technology enables the rearrangement of the position of the welding area, which can better meet the requirements of the welding area for the minimum spacing of the welding bumps.
而后，形成阻焊层120，并在第二表面上的阻焊层120中形成开口121，如图12所示。阻焊层120在焊接凸点工艺中对其他层起到绝缘保护层的作用，阻焊层例如可以为防焊感光油墨，，也可以采用与缓冲层107相同的材料，例如有机高分子光刻胶，以进一步释放焊接凸点对钝化层造成的冲击力。可以通过刻蚀工艺在阻焊层中形成开口121，开口121暴露电连线层108，用于形成焊接凸点。在一个具体的实施例中，阻焊层为防焊感光油墨，旋涂防焊感光油墨，而后，通过曝光显影工艺形成开口121，如图12所示。Then, a solder resist layer 120 is formed, and an opening 121 is formed in the solder resist layer 120 on the second surface, as shown in FIG. 12 . The solder resist layer 120 acts as an insulating protective layer for other layers in the solder bump process. The solder resist layer can be, for example, solder resist photosensitive ink, or the same material as the buffer layer 107, such as organic polymer photolithography. Glue to further release the impact of solder bumps on the passivation layer. An opening 121 may be formed in the solder resist layer by an etching process, and the opening 121 exposes the electrical connection layer 108 for forming solder bumps. In a specific embodiment, the solder resist layer is a solder resist photosensitive ink, and the solder resist photosensitive ink is spin-coated, and then the opening 121 is formed through an exposure and development process, as shown in FIG. 12 .
接着，在开口121中形成焊接凸点122，如图13所示。具体的实施例中，首先，可以先形成UBM(UnderBumpMetal,球下金属层)，而后进行植球工艺，通过掩膜版将焊料球放置于UBM上，而后采用回流焊工艺，在开孔中形成焊接凸点122，焊接凸点可以为焊球、金属柱等连接结构，材料可以为铜、铝、金、锡或铅等金属材料或他们的合金材料。Next, solder bumps 122 are formed in the openings 121 , as shown in FIG. 13 . In a specific embodiment, first, a UBM (Under Bump Metal, metal layer under the ball) can be formed first, and then the ball planting process is performed, and the solder ball is placed on the UBM through the mask plate, and then the reflow soldering process is used to form in the opening. The welding bump 122 may be a connection structure such as a solder ball or a metal column, and the material may be a metal material such as copper, aluminum, gold, tin, or lead, or an alloy thereof.
进一步的，可以继续进行切割工艺，沿晶圆1000的切割道区域1100，对晶圆1000和保护盖板200进行切割，将上述晶圆的封装结构切割为单个独立的芯片，从而获得独立影像传感芯片的封装结构。Further, the dicing process can be continued to cut the wafer 1000 and the protective cover 200 along the dicing line area 1100 of the wafer 1000, and cut the package structure of the above wafer into individual independent chips, thereby obtaining an independent image sensor. The packaging structure of the sense chip.
此外，与上述实施例的封装方法不同的是，在另一些实施例中，在第二表面上并不形成遮光层，而缓冲层107选择感光胶，感光胶具有吸光作用，除了缓解对钝化层的冲击力之外，还可以避免光线从第二表面进入影像传感区。在这些实施例中，其他加工工艺都通上述实施例相同，在此不再赘述。In addition, different from the encapsulation method of the above-mentioned embodiments, in some other embodiments, no light-shielding layer is formed on the second surface, and the buffer layer 107 chooses photosensitive glue, which has a light-absorbing effect, in addition to alleviating the effect on passivation. In addition to the impact force of the layer, it can also prevent light from entering the image sensing area from the second surface. In these embodiments, other processing techniques are the same as those in the above embodiments, and will not be repeated here.
虽然本发明披露如上，但本发明并非限定于此。任何本领域技术人员，在不脱离本发明的精神和范围内，均可作各种更动与修改，因此本发明的保护范围应当以权利要求所限定的范围为准。Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be based on the scope defined in the claims.
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| CN201510716297.6ACN105226074A (en) | 2015-10-28 | 2015-10-28 | Image sensor chip packaging structure and packaging method |
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| CN201510716297.6ACN105226074A (en) | 2015-10-28 | 2015-10-28 | Image sensor chip packaging structure and packaging method |
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| CN201510716297.6APendingCN105226074A (en) | 2015-10-28 | 2015-10-28 | Image sensor chip packaging structure and packaging method |
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