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CN105185680B - A kind of current sensing means and deielectric-coating Etaching device - Google Patents

A kind of current sensing means and deielectric-coating Etaching device
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Publication number
CN105185680B
CN105185680BCN201510608900.9ACN201510608900ACN105185680BCN 105185680 BCN105185680 BCN 105185680BCN 201510608900 ACN201510608900 ACN 201510608900ACN 105185680 BCN105185680 BCN 105185680B
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China
Prior art keywords
current signal
signal
magnetic field
electric current
control electric
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CN105185680A (en
Inventor
汤介峰
季高明
吕煜坤
朱骏
张旭升
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Abstract

The present invention relates to a kind of semiconductor device processing technology field, specifically related to a kind of current sensing means and deielectric-coating Etaching device, the driving current signal is detected by detection unit, on the one hand it may determine that whether magnetic field drive breaks down, on the other hand may determine that whether control electric current, and/or driving current signal match standard current signal.Only only under driving current signal matching normalized current state, ensure that the magnetic field produced inside deielectric-coating Etaching device is in uniform state, crystal column surface is performed etching by uniform magnetic field, is conducive to improving the etching evening ratio of wafer, while improving the yield rate of product.

Description

A kind of current sensing means and deielectric-coating Etaching device
Technical field
The present invention relates to a kind of semiconductor device processing technology field, and in particular to a kind of current sensing means and deielectric-coatingEtaching device
Background technology
Deielectric-coating etch chamber is that semiconductor production is used for the equipment that integrated circuit deielectric-coating etching technics is acted on.Each chamberBody has the coil for producing magnetic field, in technical process, and coil obtains electric current from magnetic field drivers, produces magnetic field, plasmaBody is performed etching to crystal column surface under the influence of a magnetic field.
As shown in figure 1, the circuit diagram of existing deielectric-coating etching device.Control unit output current signal;Magnetic fieldDrive device, driving current signal output is formed to receive the current signal, and according to the current signal;Driving currentSignal then drive etch chamber formation to article on plasma act on magnetic field, detection unit to receive the current signal, andAccording to current signal formation detection signal output;Judging unit receives the detection signal, judges whether detection signal accords withExpected standard is closed, such as detection signal does not meet expected standard;Then pass through alarm unit output alarm signal.Such a mode, onlyIt has detected whether control unit output current meets the requirements, under the situation that magnetic field drive breaks down, field drives dressThen there is larger error between the electric current of control unit output in the circuit for putting output, and the error fails timely acquisition, leadsCause magnetic field and control unit output circuit in etching cavity to mismatch, so cause the etching rate of wafer it is uneven, it is product intoProduct rate is substantially reduced.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides one kind and is intended to improve field homogeneity, lifts the electricity of finished product rateFlow detection device and deielectric-coating Etaching device.
The technical purpose of the present invention is realized by following technological means:
A kind of current sensing means, applied to deielectric-coating Etaching device, wherein, including:
Control unit, for exporting a control electric current signal;
Magnetic field drive, drives to receive the control electric current signal, and according to control electric current signal formationCurrent signal is exported;
Detection unit, to receive the control electric current signal, the driving current signal respectively, and according to the controlCurrent signal formation one first detection signal output;Signal output is detected according to driving current signal formation one second;
Judging unit, is prefabricated with standard current signal, and the first detection signal and the second detection letter are received respectivelyNumber, it is defeated with reference to the first detection signal and the second detection one judged result of signal formation according to the standard current signalGo out;
Alarm unit, to perform corresponding action in the presence of the judged result.
Preferably, above-mentioned current sensing means, wherein, in addition to etch chamber, to receive the driving current letterNumber, and the magnetic field matched according to driving current signal formation with the driving current signal.
Preferably, above-mentioned current sensing means, wherein, in addition to etch chamber, to receive the field drives electricityStream, matches under the judged result is equal state according to driving current signal formation with the driving current signalMagnetic field.
Preferably, above-mentioned current sensing means, wherein, the etch chamber includes a plurality of induction coils, a plurality ofThe induction coil forms the magnetic field in the presence of the driving current signal.
Preferably, above-mentioned current sensing means, wherein, when the judged result is to differ, the alarm unitSend alarm signal.
Preferably, above-mentioned current sensing means, wherein, the magnetic field drive includes the first magnetic field drivers and theTwo magnetic field drivers, first magnetic field drivers connect described control unit, and second magnetic field drivers connect the controlUnit processed.
A kind of deielectric-coating Etaching device, applied to the manufacture of semiconductor devices, wherein:Including
Control unit, for exporting a control electric current signal;
Magnetic field drive, drives to receive the control electric current signal, and according to control electric current signal formationCurrent signal is exported;
Detection unit, to receive the control electric current signal, the driving current signal respectively, and according to the controlCurrent signal formation one first detection signal output;Signal output is detected according to driving current signal formation one second;
Judging unit, is prefabricated with standard current signal, and the first detection signal and the second detection letter are received respectivelyNumber, it is defeated with reference to the first detection signal and the second detection one judged result of signal formation according to the standard current signalGo out;
Etch chamber, is identical in the judged result to receive the field drives electric current and the judged resultIn the state of, the magnetic field matched according to driving current signal formation with the driving current signal.
Preferably, above-mentioned deielectric-coating Etaching device, wherein, in addition to,
Switch element, is connected between the judging unit and the etch chamber, in the work of the judged resultSwitch under between conducting and off-state.
Preferably, above-mentioned deielectric-coating Etaching device, wherein, in addition to, alarm unit connects the judging unit, inThe judged result is when differing, the alarm unit sends alarm signal.
Preferably, above-mentioned deielectric-coating Etaching device, wherein, in addition to, the detection unit is formed by single-chip microcomputer.
Compared with prior art, it is an advantage of the invention that:
The driving current signal is detected by detection unit, on the one hand may determine that whether magnetic field drive event occursBarrier, on the other hand may determine that whether control electric current, and/or driving current signal match standard current signal.Only only existUnder driving current signal matching normalized current state, it is ensured that the magnetic field produced inside deielectric-coating Etaching device is in uniform state,Crystal column surface is performed etching by uniform magnetic field, is conducive to improving the etching evening ratio of wafer, while improving the finished product of productRate.In the state of first detection signal and/or the second detection detection signal mismatch standard current signal, alarm unit outputAlarm signal, while dielectric etch device is stopped, because being mismatched in driving current signal under normalized current state, it is situated betweenIt is in inside matter Etaching device and is in uneven state without magnetic field state or magnetic field, it is to avoid using in without magnetic field state or magnetic fieldMedium Etaching device in uneven state performs etching processing to wafer.
Brief description of the drawings
Fig. 1 is existing current sensing means electrical block diagram;
Fig. 2 is current sensing means electrical block diagram of the invention;
Fig. 3 is a kind of structural representation of embodiment of deielectric-coating Etaching device of the invention.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, completeSite preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based onEmbodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all itsHis embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phasesMutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
As shown in Fig. 2 a kind of current sensing means, applied to deielectric-coating Etaching device, wherein, including:
Control unit, for exporting a control electric current signal;
Magnetic field drive, drives to receive the control electric current signal, and according to control electric current signal formationCurrent signal is exported;
Detection unit, to receive the control electric current signal, the driving current signal respectively, and according to the controlCurrent signal formation one first detection signal output;Signal output is detected according to driving current signal formation one second;
Judging unit, is prefabricated with standard current signal, and the first detection signal and the second detection letter are received respectivelyNumber, it is defeated with reference to the first detection signal and the second detection one judged result of signal formation according to the standard current signalGo out;
Alarm unit, to perform corresponding action in the presence of the judged result.
As further preferred embodiment, above-mentioned current sensing means, wherein, in addition to etch chamber, to connectReceive the field drives electric current, and the magnetic field matched according to driving current signal formation with the driving current signal.
The present invention operation principle be:Control unit exports a control electric current signal;Magnetic field drive receives the controlCurrent signal processed, and driving current signal output is formed according to the control electric current signal;Detection unit receives the control respectivelyCurrent signal processed, the driving current signal, and first detection signal output is formed according to the control electric current signal;According toThe driving current signal formation one second detects signal output;Judging unit, is prefabricated with standard current signal, and institute is received respectivelyFirst detection signal and the second detection signal are stated, according to the standard current signal with reference to the first detection signal and instituteState the formation one judged result output of the second detection signal;Alarm unit, it is corresponding to be performed in the presence of the judged resultAction.
The driving current signal is detected by detection unit, on the one hand may determine that whether magnetic field drive event occursBarrier, on the other hand may determine that whether control electric current signal, and/or driving current signal match standard current signal.OnlyHave and matched under normalized current state in control electric current signal and driving current signal, it is ensured that produced inside deielectric-coating Etaching deviceMagnetic field be in uniform state, crystal column surface is performed etching by uniform magnetic field, be conducive to improve wafer etching evening ratio,The yield rate of product is improved simultaneously.When first detection signal and/or the second detection detection signal mismatch standard current signalUnder state, alarm unit output alarm signal, while dielectric etch device is stopped, because being mismatched in driving current signalIt is under normalized current state, inside its medium Etaching device and is in uneven state without magnetic field state or magnetic field, it is to avoid is utilizedProcessing is performed etching to wafer in the medium Etaching device that uneven state is in without magnetic field state or magnetic field.
As further preferred embodiment, above-mentioned current sensing means, wherein, in addition to etch chamber, to connectThe driving current signal is received, is driven under the judged result is equal state according to driving current signal formation with describedThe magnetic field that streaming current signal matches.
As further preferred embodiment, above-mentioned current sensing means, wherein, the etch chamber includes a plurality ofInduction coil, a plurality of induction coils form the magnetic field in the presence of the driving current signal.
As further preferred embodiment, above-mentioned current sensing means, wherein, in the judged result to differWhen, the alarm unit sends alarm signal.
As further preferred embodiment, above-mentioned current sensing means, wherein, the magnetic field drive includes theOne magnetic field drivers and the second magnetic field drivers, first magnetic field drivers connect described control unit, second magnetic fieldDriver connects described control unit.
Present invention simultaneously provides a kind of deielectric-coating Etaching device, applied to the manufacture of semiconductor devices, wherein:Including
Control unit, for exporting a control electric current signal;
Magnetic field drive, drives to receive the control electric current signal, and according to control electric current signal formationCurrent signal is exported;
Detection unit, to receive the control electric current signal, the driving current signal respectively, and according to the controlCurrent signal formation one first detection signal output;Signal output is detected according to driving current signal formation one second;
Judging unit, is prefabricated with standard current signal, and the first detection signal and the second detection letter are received respectivelyNumber, it is defeated with reference to the first detection signal and the second detection one judged result of signal formation according to the standard current signalGo out;
Etch chamber, is identical in the judged result to receive the field drives electric current and the judged resultIn the state of, the magnetic field matched according to driving current signal formation with the driving current signal.
Control unit exports a control electric current signal;Magnetic field drive receives the control electric current signal, and according to instituteState control electric current signal formation driving current signal output;Detection unit receives the control electric current signal, the driving respectivelyCurrent signal, and first detection signal output is formed according to the control electric current signal;According to the driving current signal shapeInto one second detection signal output;Judging unit, is prefabricated with standard current signal, and the first detection signal and institute are received respectivelyThe second detection signal is stated, is formed according to the standard current signal with reference to the first detection signal and the second detection signalOne judged result is exported;Alarm unit, to perform corresponding action in the presence of the judged result.
As further preferred embodiment, above-mentioned deielectric-coating Etaching device, wherein, in addition to,
Switch element, is connected between the judging unit and the etch chamber, in the work of the judged resultSwitch under between conducting and off-state.Only only match standard electric in control electric current signal and driving current signalUnder stream mode, switch element is in the conduction state, in the case of remaining, and switch element is in the state of the work disconnected, is used toStop transmitting drive circuit signal to etch chamber.
As further preferred embodiment, above-mentioned deielectric-coating Etaching device, wherein, in addition to, alarm unit, connectionThe judged result, in the judged result for when differing, the alarm unit sends alarm signal.Believe in control electric currentNumber and/or any one of driving current signal mismatch under normalized current state, alarm unit sends alarm signal.
As further preferred embodiment, above-mentioned deielectric-coating Etaching device, wherein, in addition to, the detection unitFormed by single-chip microcomputer.
A specific embodiment is enumerated, as shown in figure 3, a kind of deielectric-coating Etaching device, applied to the manufacture of semiconductor devices,Wherein:Including control unit, magnetic field drive, detection unit, judging unit, etch chamber, magnetic field drive includes theOne magnetic field drivers and the second magnetic field drivers, detection unit include the first detector and the second detector, and judging unit includesFirst determining device and the second determining device, etch chamber include first coil L1, the second coil L2, tertiary coil L3, the 4th coilL4, the first magnetic field drivers are to export first coil L1, the second coil L2Driving current, the second magnetic field drivers are to defeatedGo out tertiary coil L3, the 4th coil L4Driving current, the first detector is internally provided with standard current signal, the first detectorDetect the input current (control electric current) and output current (first line L of the first magnetic field drivers1Driving current, the second lineEnclose L2Driving current), the first determining device judges whether the input current of the first magnetic field drivers, output current match standard electricFlow, similarly the second detector is internally provided with standard current signal, the second detector detects the input electricity of the second magnetic field driversFlow (control electric current) and output current (tertiary circuit L3Driving current, the 4th coil L4Driving current), the second determining device is sentencedThe input current of disconnected second magnetic field drivers, whether output current matches the detector of normalized current second is internally provided with standard electricWhen stream signal is only only identical in the first determining device judged result and the second determining device judged result is identical, alarm is singleMember does not send alarm signal, and etch chamber is produced under uniform magnetic field, other states, and alarm unit sends alarm signal, and erosionCavity offer work is provided.
Preferred embodiments of the present invention are above are only above, not thereby limit embodiments of the present invention and protection modelEnclose, to those skilled in the art, should can appreciate that made by all utilization description of the invention and diagramatic contentScheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.

Claims (10)

CN201510608900.9A2015-09-222015-09-22A kind of current sensing means and deielectric-coating Etaching deviceActiveCN105185680B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN201510608900.9ACN105185680B (en)2015-09-222015-09-22A kind of current sensing means and deielectric-coating Etaching device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN201510608900.9ACN105185680B (en)2015-09-222015-09-22A kind of current sensing means and deielectric-coating Etaching device

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CN105185680Btrue CN105185680B (en)2017-10-03

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Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH0724761B2 (en)*1985-03-291995-03-22株式会社日立製作所 Plasma processing device
US6113731A (en)*1997-01-022000-09-05Applied Materials, Inc.Magnetically-enhanced plasma chamber with non-uniform magnetic field
US5973447A (en)*1997-07-251999-10-26Monsanto CompanyGridless ion source for the vacuum processing of materials
KR100311234B1 (en)*1999-01-182001-11-02학교법인 인하학원Enhanced inductively coupled plasma reactor
US6733617B2 (en)*2001-07-112004-05-11Taiwan Semiconductor Manufacturing Co., Ltd.Direct detection of dielectric etch system magnet driver and coil malfunctions
US7127358B2 (en)*2004-03-302006-10-24Tokyo Electron LimitedMethod and system for run-to-run control

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