CN105147280A - Flexible neural microelectrode array with hollow projection structure and manufacturing method thereof - Google Patents

Abstract

The invention relates to the field of biomedical equipment, and especially relates to a flexible neural microelectrode array with hollow projection structures and a manufacturing method thereof. The flexible neural microelectrode array with hollow projection structures comprises a flexible substrate, an insulating layer, microelectrode units, wires, and wire welding spots. The microelectrode units, the wires, and the wire welding spots are arranged on the flexible substrate. The microelectrode unit and the wire welding spots are connected through the wire. The insulating layer covers on the flexible substrate. The microelectrode unit is exposed through exposing out of the insulating layer. The flexible substrate is provided with a plurality of hollow projections exposed out of the insulating layer. The microelectrode units are arranged on the hollow projections of the flexible substrate. The flexible neural microelectrode array can effectively reduce contact resistance and mechanical strength of microelectrodes. The invention also provides a manufacturing method for the neural microelectrode array. The method comprises: coating the flexible substrate in spinning manner on a form board, then laying the microelectrode units, the wires, and the wire welding spots, and laying the insulating layer, and making the microelectrode units exposed out of the insulating layer. The manufacturing process is simple and fast, and cost is low.

Description

Flexible nervus array with hollow bulge-structure and preparation method thereof

Technical field

The present invention relates to biomedical devices field, particularly relate to a kind of flexible nervus array with hollow bulge-structure and preparation method thereof.

Background technology

When carrying out medical diagnosis or corresponding research, need to measure and record the body built-in potential of human body or studied animal, transcutaneous electrostimulation is the means of a kind of aided disease treatment of clinical frequent use in addition.Various Medical measuring instrument device all needs to contact by suitable electrode the transmission realizing the signal of telecommunication with body when carrying out bio electricity and detecting and when applying electricity irritation auxiliary treatment to sick body, when carrying out bio electricity for nerve system of human body and detecting, need to use flexible nervus array, in recent years, owing to there is based on the electrod-array of flexible substrate good bio-compatibility and to organizing less infringement, being widely studied and applied in CO2 laser weld built-in type device.But be generally planar electrode array based on this type of flexible substrate, the flexible micro-electrode of the micro-meter scale of current existence, when not carrying out finishing, there is two problems: 1, the existence of insulating barrier, metal electrode part is caused to be in the state of depression, electrode, along with the reduction of size, is difficult to form good contact with position to be measured; 2, along with the reduction of electrode size, the surface impedance of electrode increases, and Electrophysiology signal is fainter under normal circumstances, and the increase of electrode surface impedance can affect the measurement of signal.

Summary of the invention

Main purpose of the present invention is that providing a kind of can reduce flexible nervus array with hollow bulge-structure of contact impedance and preparation method thereof, effectively can improve the contact area of flexible nervus and detected part, reduce the contact impedance of flexible nervus and detected part.

Further, the present invention can also reduce the mechanical strength of microelectrode site, ensure that with detected part good contact while, any damage can not be caused to detected part.

For achieving the above object, the invention provides a kind of flexible nervus array with hollow bulge-structure, comprise flexible substrates, insulating barrier, microelectrode unit, wire and lead solder-joint, described microelectrode unit, wire and lead solder-joint are arranged in described flexible substrates, be connected by described wire between described microelectrode unit and described lead solder-joint, described insulating barrier covers in described flexible substrates, described microelectrode unit exposes to described insulating barrier, described flexible substrates is provided with multiple hollow shape projection exposing to described insulating barrier, described microelectrode unit is arranged in the hollow shape projection of described flexible substrates.

Preferably, described insulating barrier is provided with opening in the position of described lead solder-joint, and described lead solder-joint is exposed by the opening of described insulating barrier.

Preferably, the hollow shape projection of described insulating barrier is provided with adhesion layer, described microelectrode unit is arranged on described adhesion layer.

Preferably, the material of described adhesion layer comprises titanium, chromium, or comprises one or both the alloy in these two kinds of elements, and the material of described microelectrode unit is gold.

Preferably, the material of described flexible substrates comprises polydimethylsiloxane, and the material of described insulating barrier comprises can the polydimethylsiloxane of photoetching.

In addition, the present invention also provides a kind of preparation method with the flexible nervus array of hollow bulge-structure, comprises the following steps:

S100, microelectrode make template surface on spin coating one deck flexible substrates, form the flexible base layer with projection; It is the tabular that surface is provided with multiple projection that described microelectrode makes template;

S200, boss deposition microelectrode unit in flexible base layer, route wires and lead solder-joint in flexible base layer, connect microelectrode unit and lead solder-joint by wire;

S300, in the flexible base layer after step S200 process, lay insulating barrier, and by the position opening of described insulating barrier in described microelectrode unit, described lead solder-joint, make described microelectrode unit, described lead solder-joint exposes through described insulating barrier;

S400, microelectrode is made template be separated with flexible base layer, obtain the described flexible nervus array with hollow bulge-structure.

Preferably, in step s 200, first shape is used to make the identical metal form of template with microelectrode, described metal form makes with described microelectrode the microelectrode unit in template, the position that the predeterminated position of wire and lead solder-joint is corresponding arranges opening, and described metal form is covered in flexible base layer, afterwards by the opening on described metal form, at the boss deposition microelectrode unit of flexible base layer, route wires and lead solder-joint in flexible base layer, and connect microelectrode unit and lead solder-joint by wire, afterwards at the boss deposition microelectrode unit of flexible base layer, then the described flexible base layer that described metal form makes template from described microelectrode is separated.

Preferably, in step s 200, before the boss deposition microelectrode unit of flexible base layer, first in the boss deposition of adhesion of flexible base layer, on described adhesion layer, microelectrode unit is deposited afterwards.

Preferably, the material of described adhesion layer comprises titanium, chromium, or comprises one or both the alloy in these two kinds of elements.

Preferably, the material of described microelectrode unit is gold, and the available material of described flexible substrates comprises polydimethylsiloxane, and the available material of described insulating barrier comprises can the polydimethylsiloxane of photoetching.

A kind of flexible nervus array with hollow bulge-structure is provided in the present invention, it comprises flexible substrates, insulating barrier, microelectrode unit, wire and lead solder-joint, microelectrode unit, wire and lead solder-joint are all arranged on a flexible substrate, connected by wire between microelectrode unit and lead solder-joint, insulating barrier covers on a flexible substrate, microelectrode unit exposes to insulating barrier, flexible substrates in the present invention is provided with multiple hollow shape projection exposing to insulating barrier, microelectrode unit is arranged in the hollow shape projection of flexible substrates, compared with traditional flexible nervus array, hollow projection in the present invention in flexible substrates arranges microelectrode unit, compared to the flexible substrates microelectrode at plane formula, microelectrode in projection adds the surface area in electricity irritation site, effectively can reduce contact impedance, and because the projection in the flexible substrates in the present invention is hollow, therefore it can reduce the bulk strength of microelectrode site, it is made not easily to cause damage to measured position in use,

The present invention also provides the preparation method of the flexible nervus array with hollow bulge-structure, the tabular microelectrode with multiple projection is used to make template, spin coating one deck flexible base layer in template is made at microelectrode, route wires and lead solder-joint in flexible base layer afterwards, at the boss deposition microelectrode unit of flexible base layer, and insulating barrier is laid in flexible base layer, and make the microelectrode unit on the boss of flexible base layer and boss expose to insulating barrier, manufacturing process simple and fast, and with low cost.

Accompanying drawing explanation

Fig. 1 is the perspective view with the flexible nervus array of hollow bulge-structure in the present invention;

Fig. 2 is the side structure sectional view with the flexible nervus array of hollow bulge-structure in the present invention;

Fig. 3 is the side structure schematic diagram of the microelectrode making template that having in the present invention uses in the preparation method of the flexible nervus array of hollow bulge-structure;

Fig. 4 is the preparation method schematic flow sheet with the first embodiment of the preparation method of the flexible nervus array of hollow bulge-structure in the present invention;

Fig. 5 is the preparation method schematic flow sheet with the second embodiment of the preparation method of the flexible nervus array of hollow bulge-structure in the present invention.

The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.

Detailed description of the invention

Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.

The invention provides a kind of flexible nervus array (microelectrode array can be called for short below) with hollow bulge-structure, see figures.1.and.2, Fig. 1 is the perspective view with the flexible nervus array of hollow bulge-structure in the present invention, Fig. 2 is the side structure sectional view with the flexible nervus array of hollow bulge-structure in the present invention, the flexible nervus array with hollow bulge-structure comprises flexible substrates 1, insulating barrier 2, microelectrode unit 3, wire 4 and lead solder-joint 5, described microelectrode unit 3, wire 4 and lead solder-joint 5 are arranged in described flexible substrates 1, be connected by described wire 4 between described microelectrode unit 3 and described lead solder-joint 5, described insulating barrier 2 covers in described flexible substrates 1, described microelectrode unit 3 exposes to described insulating barrier 2, described flexible substrates 1 is provided with multiple hollow shape projection 7 exposing to described insulating barrier 2, described microelectrode unit 3 is arranged in the hollow shape projection 7 of described flexible substrates.

In the present invention, the flexible nervus array with hollow bulge-structure adopts the flexible substrates 1 with hollow shape bulge-structure, microelectrode unit 3 is deposited in the hollow shape projection in flexible substrates 1, wire 4 is similar to traditional microelectrode array with the set-up mode of lead solder-joint 5, can arrange accordingly by different types of microelectrode array, connected between microelectrode unit 3 and lead solder-joint 5 by wire 4, insulating barrier 2 is covered in flexible substrates 1, and make microelectrode unit 3 expose to insulating barrier 2, in use, when microelectrode array is attached to detected part, compared with traditional microelectrode unit 3, microelectrode unit 3 in the present invention can form larger contact area with detected part, namely the surface area in electrode stimulating site can be increased at the structural microelectrode unit 3 of the convex shape of flexible substrates 1, reduce contact impedance, and, hollow shape bulge-structure in flexible substrates 1 can also reduce the intensity of microelectrode unit 3 electrode site, any damage can not be brought to measured position.

Wherein in a preferred embodiment, insulating barrier 2 is provided with opening in the position of described lead solder-joint 5, and described lead solder-joint 5 is exposed by the opening of insulating barrier 2.Insulating barrier 2 can also use the insulating barrier of multiple independent laminated structure, now, making flexible substrates 1, and lay microelectrode unit 3, wire and lead solder-joint 5 in flexible substrates 1 after, only the insulating barrier 2 of multiple independent laminated structure need be covered in flexible substrates 1 and wire 4 is covered, microelectrode unit 3 and lead solder-joint 5 are exposed.

Wherein in a preferred embodiment, the hollow shape projection 7 of described insulating barrier 2 is provided with adhesion layer 6, and microelectrode unit 3 is arranged on adhesion layer 6, and microelectrode unit 3 is more easily combined with adhesion layer 6, improve the stability of microelectrode unit 3, make microelectrode unit 3 more firm.

Wherein in a preferred embodiment, the material of described adhesion layer 6 comprises titanium, chromium, or comprises one or both the alloy in these two kinds of elements, and the material of described microelectrode unit 3 is gold.

Wherein in a preferred embodiment, the material of described flexible substrates 1 comprises polydimethylsiloxane, and the material of described insulating barrier comprises can the polydimethylsiloxane of photoetching.

But be noted that the making material of all parts in the present invention is not limited to above-mentioned given material, the conventional alternative material that any those skilled in that art can expect belongs to the equivalent replacement of above-mentioned cited material.

In the present invention, the shape of the projection in flexible substrates 1 is not limited to the hollow hemispherical provided in accompanying drawing, it can also be hollow taper shape, the shapes such as hollow pyramid, rectangular pyramid, polygonal pyramid, hollow hemispherical projections in its effect and the present invention is similar, belong to for equal replacement of the present invention, will not enumerate at this.

The present invention also provides a kind of preparation method with the flexible nervus array of hollow bulge-structure, the preparation method schematic flow sheet of its first embodiment as shown in Figure 4, microelectrode is used to make template 8, its side structure schematic diagram as shown in Figure 3, entirety is tabular, be provided with multiple protruding 801 in its surface, the preparation method with the flexible nervus array of hollow bulge-structure adopts following steps to make:

S100, microelectrode make template surface on spin coating one deck flexible substrates, form the flexible base layer with projection; It is the tabular that surface is provided with multiple projection that described microelectrode makes template;

S200, boss deposition microelectrode unit in flexible base layer, route wires and lead solder-joint in flexible base layer, connect microelectrode unit and lead solder-joint by wire;

S300, in the flexible base layer after step S200 process, lay insulating barrier, and by the position opening of described insulating barrier in described microelectrode unit, described lead solder-joint, make described microelectrode unit, described lead solder-joint exposes through described insulating barrier;

S400, microelectrode is made template be separated with flexible base layer, obtain the described flexible nervus array with hollow bulge-structure.

In above-mentioned technological process, first the microelectrode shown in Fig. 3 is used to make template, spin coating flexible substrates in template is made at microelectrode, multiple projection is had because microelectrode makes in template, the plurality of projection is mated with the hollow convex shape with the flexible nervus array of hollow bulge-structure that will prepare, therefore after spin coating flexible substrates, flexible substrates just defines multiple hollow bulge-structure, microelectrode unit is deposited afterwards on hollow bulge-structure, and route wires and lead solder-joint on a flexible substrate, by wire, microelectrode unit and lead solder-joint are coupled together, lay insulating barrier on a flexible substrate afterwards, by described insulating barrier at described microelectrode unit, the position opening of described lead solder-joint, make described microelectrode unit, described lead solder-joint exposes through described insulating barrier, after flexible substrates and the equal coagulation forming of insulating barrier, microelectrode is made template be separated with flexible base layer, obtain the described flexible nervus array with hollow bulge-structure, a kind of preparation method simple and fast with the flexible nervus array of hollow bulge-structure in the present invention, easy making, and cost of manufacture is cheap, production efficiency is high.

A kind of preparation method with the flexible nervus array of hollow bulge-structure in the present invention, the production technological process of its second embodiment as shown in Figure 5, microelectrode is used to make template 8, its side structure schematic diagram as shown in Figure 3, entirety is tabular, be provided with multiple protruding 801 in its surface, adopt following steps to make:

S100, microelectrode make template surface on spin coating one deck polydimethylsiloxane as flexible substrates, form the flexible base layer with projection;

S200 ', shape is used to make the identical metal form of template with microelectrode, described metal form makes with described microelectrode the microelectrode unit in template, the position that the predeterminated position of wire and lead solder-joint is corresponding arranges opening, and described metal form is covered in flexible base layer, afterwards by the opening on described metal form, one deck titanium or chromium is deposited as adhesion layer at the boss of flexible base layer, one deck gold is deposited afterwards as microelectrode unit on adhesion layer, route wires and lead solder-joint in flexible base layer, microelectrode unit and lead solder-joint is connected by wire, then the described flexible base layer that described metal form makes template from described microelectrode is separated,

S300, in the flexible base layer after step S200 ' process, lay insulating barrier, and by the position opening of described insulating barrier in described microelectrode unit, described lead solder-joint, make described microelectrode unit, described lead solder-joint exposes through described insulating barrier;

S400, microelectrode is made template be separated with flexible base layer, obtain the described flexible nervus array with hollow bulge-structure.

In this embodiment, microelectrode to make in template spin coating one deck polydimethylsiloxane as flexible substrates after, shape is used to make the identical metal form of template with microelectrode, and the microelectrode unit that will metal form makes with described microelectrode in template, the position that the predeterminated position of wire and lead solder-joint is corresponding arranges opening, metal form is covered in flexible base layer, afterwards by the opening on described metal form, one deck titanium or chromium is deposited as adhesion layer at the boss of flexible base layer, one deck gold is deposited afterwards as microelectrode unit on adhesion layer, route wires and lead solder-joint in flexible base layer, microelectrode unit and lead solder-joint is connected by wire, then the described flexible base layer that described metal form makes template from described microelectrode is separated, use metal form, according to microelectrode unit in flexible substrates, the predeterminated position of wire and lead solder-joint, metal form offers multiple opening accordingly, then metal form is laid on a flexible substrate, afterwards microelectrode unit is set on a flexible substrate by the opening on metal form, wire and lead solder-joint, metal form is removed after connecting between microelectrode unit and lead solder-joint by wire, can the making of convenient microelectrode array.

As the preferred embodiment of the invention, the optional material of the adhesion layer in the present invention comprises titanium, chromium, or one or both the alloy comprised in these two kinds of elements, magnetron sputtering method can be adopted titanium or chromium or comprise the boss of one or both the alloy deposition in these two kinds of elements in flexible substrates, the material of described microelectrode unit is gold, the available material of described flexible substrates is including, but not limited to polydimethylsiloxane, and the available material of described insulating barrier includes but are not limited to: can the polydimethylsiloxane of photoetching.

These are only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize description of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.

Claims (10)

1. there is the flexible nervus array of hollow bulge-structure, comprise flexible substrates, insulating barrier, microelectrode unit, wire and lead solder-joint, described microelectrode unit, wire and lead solder-joint are arranged in described flexible substrates, be connected by described wire between described microelectrode unit and described lead solder-joint, described insulating barrier covers in described flexible substrates, described microelectrode unit exposes to described insulating barrier, it is characterized in that, described flexible substrates is provided with multiple hollow shape projection exposing to described insulating barrier, described microelectrode unit is arranged in the hollow shape projection of described flexible substrates.

2. have the flexible nervus array of hollow bulge-structure as claimed in claim 1, it is characterized in that, described insulating barrier is provided with opening in the position of described lead solder-joint, and described lead solder-joint is exposed by the opening of described insulating barrier.

3. have the flexible nervus array of hollow bulge-structure as claimed in claim 1 or 2, it is characterized in that, the hollow shape projection of described insulating barrier is provided with adhesion layer, described microelectrode unit is arranged on described adhesion layer.

4. there is the flexible nervus array of hollow bulge-structure as claimed in claim 3, it is characterized in that, the material of described adhesion layer comprises titanium, chromium, or comprises one or both the alloy in these two kinds of elements, and the material of described microelectrode unit is gold.

5. have the flexible nervus array of hollow bulge-structure as claimed in claim 1, it is characterized in that, the material of described flexible substrates comprises polydimethylsiloxane, and the material of described insulating barrier comprises can the polydimethylsiloxane of photoetching.

6. the preparation method with the flexible nervus array of hollow bulge-structure as described in any one of claim 1-5, is characterized in that, comprise the following steps:

S100, microelectrode make template surface on spin coating one deck flexible substrates, form the flexible base layer with projection; It is the tabular that surface is provided with multiple projection that described microelectrode makes template;

S200, boss deposition microelectrode unit in flexible base layer, route wires and lead solder-joint in flexible base layer, connect microelectrode unit and lead solder-joint by wire;

S300, in the flexible base layer after step S200 process, lay insulating barrier, and by the position opening of described insulating barrier in described microelectrode unit, described lead solder-joint, make described microelectrode unit, described lead solder-joint exposes through described insulating barrier;

S400, microelectrode is made template be separated with flexible base layer, obtain the described flexible nervus array with hollow bulge-structure.

7. there is the preparation method of the flexible nervus array of hollow bulge-structure as claimed in claim 6, it is characterized in that, in step s 200, first shape is used to make the identical metal form of template with microelectrode, described metal form makes with described microelectrode the microelectrode unit in template, the position that the predeterminated position of wire and lead solder-joint is corresponding arranges opening, and described metal form is covered in flexible base layer, afterwards by the opening on described metal form, at the boss deposition microelectrode unit of flexible base layer, route wires and lead solder-joint in flexible base layer, and connect microelectrode unit and lead solder-joint by wire, afterwards at the boss deposition microelectrode unit of flexible base layer, then the described flexible base layer that described metal form makes template from described microelectrode is separated.

8. the preparation method with the flexible nervus array of hollow bulge-structure as described in claim 6 or 7, it is characterized in that, in step s 200, before the boss deposition microelectrode unit of flexible base layer, first in the boss deposition of adhesion of flexible base layer, on described adhesion layer, microelectrode unit is deposited afterwards.

9. have the preparation method of the flexible nervus array of hollow bulge-structure as claimed in claim 8, it is characterized in that, the material of described adhesion layer comprises titanium, chromium, or comprises one or both the alloy in these two kinds of elements.

10. the preparation method with the flexible nervus array of hollow bulge-structure as described in claim 6 or 7, it is characterized in that, the material of described microelectrode unit is gold, the available material of described flexible substrates comprises polydimethylsiloxane, and the available material of described insulating barrier comprises can the polydimethylsiloxane of photoetching.