Plasma process of the prior art, with the large area of substrate and the miniaturization of device, exist to moreThe needs for the plasma that low pressure lower density is high and bore is big, the uniformity of the technique on substrate turn into than more difficult in the pastProblem.
At this point, in inductively type plasma processing apparatus, in the dielectric window close with RF antennasInner side produces the plasma of doughnut shape, and the plasma of the doughnut shape is bled around towards substrate, but due toPressure in chamber, the spreading morphology of plasma are changed, so as to which the plasma density distribution on substrate easily changes.CauseThis, if can not be maked corrections to magnetic field caused by RF antennas (irritability antenna), even if making the pressure in processing schemeChange and keep the uniformity of the plasma density on substrate, can not adapt to will in current plasma processing apparatusThe various and high process performance asked.
In view of prior art as described above, the present invention, which provides, is not needing the RF antennas and height of plasma generationIn the case that frequency electric power system carries out special fining-off, simple correction coil freedom can be used and be finely controlled etc. fromThe inductively type plasma processing apparatus and method of plasma processing of the Density Distribution of daughter.
According to the plasma processing apparatus of the first viewpoint of the present invention, including：Process container with dielectric window, matches somebody with somebodyThe coiled type RF antennas outside above-mentioned dielectric window are put, keep the substrate of processed substrate to keep in above-mentioned process containerPortion, in order to implement desired corona treatment to aforesaid substrate, and desired processing gas is supplied to above-mentioned process containerInterior processing gas supply unit, in order to produce the plasma of processing gas by inductively in above-mentioned process container,High frequency power supply by the high frequency power supply of the frequency of suitable processing gas high-frequency discharge to above-mentioned RF antennas, on controllingThe plasma density distribution on the aforesaid substrate in process container is stated, can coupled by electromagnetic induction with above-mentioned RF antennasPosition, the correction coil that is configured outside above-mentioned process container, the switch element being arranged in the ring of above-mentioned correction coil, andWith desired dutycycle, the switching controlling part by pulse width modulation to the progress ON/OFF control of above-mentioned switch element.
In the plasma processing apparatus according to above-mentioned first viewpoint, pass through structure as described above, particularly, rootAccording to the structure for including above-mentioned correction coil, above-mentioned switch element and above-mentioned switching controlling part, when by high frequency power supply by high-frequency electricalWhen power is supplied to RF antennas, it can shape and stably obtain correction coil to the high frequency electric by flowing through RF antennas in antennaThe effect in RF magnetic fields caused by conductor periphery (is partly reduced on the position side overlapping with coil-conductor by inductively producingThe effect of the plasma density of raw core).Further, such correction coil effect can also substantially linearly be controlledThe degree of (effect for partly reducing the density of the plasma of core).Therefore, it is possible to the substrate on board holderIt is any nearby and be finely controlled the Density Distribution of plasma, it can easily realize that the uniformity of plasma process carriesIt is high.
According to a kind of plasma processing apparatus of the second viewpoint of the present invention, including：Processing with dielectric window is heldDevice, the coiled type RF antennas outside above-mentioned dielectric window are configured, the substrate of processed substrate is kept in above-mentioned process containerMaintaining part, in order to implement desired corona treatment to aforesaid substrate, it would be desirable to processing gas supply to above-mentioned processing and holdProcessing gas supply unit in device, in order to produce the plasma of processing gas by inductively in above-mentioned process containerBody, the high frequency power supply by the high frequency power supply of the frequency of suitable processing gas high-frequency discharge to above-mentioned RF antennas, in order to controlMake the plasma density distribution on the aforesaid substrate in above-mentioned process container, can by electromagnetic induction and with above-mentioned RF daysThe position of line coupling, the correction coil configured outside above-mentioned process container, are arranged on variable in the ring of above-mentioned correction coilResistance, and the resistance control unit by the resistance value control of above-mentioned variable resistor for desired value.
In the plasma processing apparatus according to above-mentioned second viewpoint, by structure as described above, particularly, pass throughInclude the structure of above-mentioned correction coil, above-mentioned variable resistor and above-mentioned resistance control unit, when by high frequency power supply by RF powerWhen supply is to RF antennas, it can shape and play consistently correction coil to the high frequency electric by flowing through RF antennas in antenna conductorThe effect in RF magnetic fields caused by periphery (is partly reduced on the position side overlapping with coil-conductor by inductively caused coreThe effect of the plasma density of the heart).Further, it can also substantially linearly control such correction coil effect (localGround reduce core plasma density effect) degree.Therefore, it is possible to appoint near the substrate on board holderAnticipate and be finely controlled the Density Distribution of plasma, can easily realize the raising of the uniformity of plasma process.
According to the plasma processing apparatus of the 3rd viewpoint of the present invention, including：Process container with dielectric window, matches somebody with somebodyThe RF antennas outside above-mentioned dielectric window are put, the board holder of processed substrate is kept in above-mentioned process container, in order toDesired corona treatment is implemented to aforesaid substrate, it would be desirable to processing gas supply to the processing gas in above-mentioned process containerBody supply unit, in order to produce the plasma of processing gas by inductively in above-mentioned process container, by suitable processingThe high frequency power supply of the frequency of gas high-frequency discharge to above-mentioned RF antennas high frequency power supply, in order to control above-mentioned process containerPlasma density distribution on interior aforesaid substrate, in position that can be by electromagnetic induction to be coupled with above-mentioned RF antennasCorrection coil that is upper, being configured outside above-mentioned process container, and the derailing switch being arranged in the ring of above-mentioned correction coil.
In the plasma processing apparatus according to above-mentioned 3rd viewpoint, by structure as described above, particularly, pass throughStructure including above-mentioned correction coil and above-mentioned derailing switch, when by high frequency power supply by high frequency power supply to RF antennas, energyEnough selectively obtain correction coil to as flow through the high frequency electrics of RF antennas on antenna conductor periphery caused by RF magnetic fields workWith (partly reducing on the position side overlapping with coil-conductor by the effect of the inductively plasma density of caused coreFruit).
According to the plasma processing apparatus of the 4th viewpoint of the present invention, including：With dielectric window can vacuum rowThe process container of gas, the RF antennas outside above-mentioned dielectric window are configured, processed substrate is kept in above-mentioned process containerBoard holder, in order to implement desired corona treatment to aforesaid substrate, it would be desirable to processing gas supply to above-mentioned placeManage container in processing gas supply unit, in order in above-mentioned process container by inductively and produce the grade of processing gas fromDaughter, the high frequency power supply by the high frequency power supply of the frequency of suitable processing gas high-frequency discharge to above-mentioned RF antennas, in order toControl the plasma density distribution on the aforesaid substrate in above-mentioned process container, can by electromagnetic induction and with above-mentioned RFThe position of antenna coupling, the first and second correction coils configured outside above-mentioned process container, and it is separately positioned on above-mentioned theOne and second correction coil ring in the first and second derailing switches.
In the plasma processing apparatus according to above-mentioned 4th viewpoint, by structure as described above, particularly, pass throughStructure including the above-mentioned first and second correction coils and above-mentioned first and second derailing switch, when by high frequency power supply by high frequencyDuring power supply to RF antennas, each correction coil can be selectively obtained the high frequency electric by flowing through RF antennas is led in antennaThe effect in RF magnetic fields caused by body periphery (is partly reduced on the position side overlapping with coil-conductor by inductively causedThe effect of the plasma density of core), further can be more by the combination of the first correction coil and the second correction coilSelect the coil overall profile (distribution map) that makes corrections sample.
According to the method for plasma processing of the 5th viewpoint of the present invention, it is to being located in plasma processing apparatusThe method of plasma processing that substrate implements desired corona treatment is managed, wherein, the plasma processing apparatus includes：ToolThere is the process container of dielectric window；Configure the coiled type RF antennas outside above-mentioned dielectric window；Protected in above-mentioned process containerHold the board holder of above-mentioned processed substrate；In order to implement desired corona treatment to aforesaid substrate and by desired placeProcess gases is supplied to the processing gas supply unit in above-mentioned process container；With in order in above-mentioned process container by inductivelyProduce processing gas plasma and by the high frequency power supply of the frequency of suitable processing gas high-frequency discharge to above-mentioned RF daysThe high frequency power supply of line；Configured outside above-mentioned process container with above-mentioned RF antenna parallels can by electromagnetic induction and with it is upperThe correction coil of RF antennas coupling is stated, derailing switch is set in the ring of above-mentioned correction coil, controls the switch shape of above-mentioned derailing switchState and control the plasma density on aforesaid substrate.
In the method for plasma processing according to above-mentioned 5th viewpoint, by method as described above, particularly, pass throughCorrection coil that can be by electromagnetic induction to be coupled with RF antennas is configured with RF antenna parallels outside process container, is being maked correctionsDerailing switch is set in the ring of coil, and by controlling switch (ON/OFF) state of the derailing switch, incited somebody to action when by high frequency power supplyDuring high frequency power supply to RF antennas, can shape and stably obtain correction coil exists to the high frequency electric by flowing through RF antennasThe effect in RF magnetic fields caused by antenna conductor periphery (is partly reduced on the position side overlapping with coil-conductor by inductivelyThe action effect of the plasma density of caused core).Therefore, it is possible to arbitrarily be controlled near the substrate on board holderThe Density Distribution of plasma processed, it can easily realize the raising of the uniformity of plasma process.
According to a kind of method of plasma processing of the 6th viewpoint of the present invention, it is right in plasma processing apparatusProcessed substrate implements the method for plasma processing of desired corona treatment, wherein, the plasma processing apparatus bagInclude：Process container with dielectric window；Configure the coiled type RF antennas outside above-mentioned dielectric window；In above-mentioned process containerThe interior board holder for keeping above-mentioned processed substrate；It will expect to implement desired corona treatment to aforesaid substrateProcessing gas supply to the processing gas supply unit in above-mentioned process container；With in order to pass through sensing in above-mentioned process containerCoupling produce the plasma of processing gas and by the high frequency power supply of the frequency of suitable processing gas high-frequency discharge to above-mentionedThe high frequency power supply of RF antennas；Outside above-mentioned process container, electromagnetic induction can be passed through by being configured with above-mentioned RF antenna parallelsAnd the first and second correction coils coupled with above-mentioned RF antennas, set respectively in the ring of the above-mentioned first and second correction coilsFirst and second derailing switches, control the respective on off state of above-mentioned first and second derailing switch and control on aforesaid substrate etc.Plasma density.
In the method for plasma processing according to above-mentioned 6th viewpoint, by method as described above, particularly, pass throughThe first and second corrections that can be by electromagnetic induction to be coupled with RF antennas are configured with RF antenna parallels outside process containerCoil, the first and second derailing switches are set in rings of these the first and second corrections coils, and by control these firstWith respective switch (ON/OFF) state of second switch device, when by high frequency power supply by high frequency power supply to RF antennas, energyIt is enough shape and stably obtain correction coil to as flow through the high frequency electrics of RF antennas on antenna conductor periphery caused by RF magnetic fieldsEffect (partly reduce on the position side overlapping with coil-conductor by the plasma density of inductively caused coreAction effect).Therefore, it is possible to arbitrarily control the Density Distribution of plasma, energy near the substrate on board holderThe raising of enough uniformities for easily realizing plasma process.
The effect of invention
According to the plasma processing apparatus or method of plasma processing of the present invention, pass through structure as described above and workWith, can in the case where not needing the RF antennas of plasma generation and high frequency power supply carrying out special fining-off,Using simple correction coil freedom and it is finely controlled the Density Distribution of plasma.
Embodiment
Illustrate the preferred embodiment of the present invention below with reference to the accompanying drawings.
First embodiment
The first embodiment of the present invention is illustrated in Fig. 1~Figure 10.
Fig. 1 represents the structure of the inductively type plasma processing apparatus of first embodiment of the invention.The sensing couplingMould assembly plasma processing apparatus is configured to the plasma-etching apparatus using planar line cast RF antennas, has for example by aluminiumOr the cylinder type vacuum chamber (process container) 10 of the metal such as stainless steel manufacture.The safety ground of chamber 10.
First, the inductively each several part unrelated with plasma generation in type plasma-etching apparatus is illustratedStructure.
Lower central in chamber 10, flatly it is configured with such as semiconductor wafer W of the mounting as processed substrateDiscoideus pedestal 12, as the substrate holder as high-frequency electrode.The pedestal 12 is for example made up of aluminium, by from the bottom of chamber 10The insulating properties tubular support sector 14 that portion extends vertically upwards supports.
The electric conductivity tubular extended vertically upwards in the periphery along insulating properties tubular support sector 14 from the bottom of chamber 10 is supportedThe exhaust channel 18 of ring-type is formed between portion 16 and the inwall of chamber 10, ring-type is installed on the top of the exhaust channel 18 or entranceGear (baffle) plate 20, while bottom set exhaust outlet 22.In order that the gas in chamber 10 is flowed on pedestal 12Semiconductor wafer W is relative to axle (Shaft objects) it is uniform, it is preferably configured as along the circumferential direction being equally spaced multiple exhaustsMouth 22.
On each exhaust outlet 22 exhaust apparatus 26 is connected via blast pipe 24.Exhaust apparatus 26 has turbomolecular pump etc. trueEmpty pump, the plasma processing space in chamber 10 can be depressurized to desired vacuum.Outside the side wall of chamber 10, installationMake the gate valve 28 of the opening and closing of conveyance outlet 27 of semiconductor wafer W.
On pedestal 12, the high frequency electric source 30 of RF antennas is electrically connected via integrator 32 and feeder rod used therein 34.The high-frequency electricalSource 30 is configured to the certain frequency for being suitable to the energy for the ion that control is imported in semiconductor wafer W with variable power outputThe high-frequency RF of (below 13.56MHz)L.Integrator 32 is stored in the impedance of the side of high frequency electric source 30 and load (mainly baseSeat, plasma, chamber) the variable integrated circuit of the reactance (リ ア Network タ Application ス) integrated between the impedance of side.In the integrationThe blocking capacitor for producing itself biasing is included in circuit.
In the upper surface of pedestal 12, it is provided for keeping the electrostatic chuck 36 of semiconductor wafer W with electrostatic attraction, quietThe focusing ring 38 for setting ring-type to surround around semiconductor wafer W on the outside of the radial direction of electric card disk 36.Electrostatic chuck 36 will be by leadingThe electrode 36a that electrolemma is formed is sandwiched between a pair of dielectric films 36b, 36c, via switch 42 and the electricity of envelope curve 43 on electrode 36aConnect the dc source 40 of high pressure., can be by electrostatic force by semiconductor by the high-voltage dc voltage applied by dc source 40Wafer W absorption is maintained on electrostatic chuck 36.
In the inside of pedestal 12, such as circumferentially extending ring-type cryogen chamber or refrigerant circulation path are set44.It is not shown by cooling unit (チ ラ ー ユ ニ Star ト in the cryogen chamber 44) via the circulation supply regulation of pipe arrangement 46,48Such as cooling water cw of temperature refrigerant.By the temperature of refrigerant, the semiconductor wafer W on electrostatic chuck 36 can be controlledProcessing in temperature.Related to thisly, the thermal conductivity gas of such as He gases of heat-conducting gas supply unit (not shown) will be come fromBody is supplied to via gas supply pipe 50 between the upper surface of electrostatic chuck 36 and the back side of semiconductor wafer W.In addition, in order to fillLoad/unloading semiconductor wafer W, also set up the lifter pin and its lift that vertically penetrates pedestal 12 and can move up and downStructure (not shown) etc..
Next, illustrate the inductively each several part related to producing plasma in type plasma-etching apparatusStructure.
At the top of chamber 10, separate what the air-tightness installation of relatively large distance compartment of terrain was made up of such as quartz plate with pedestal 12Circular dielectric window 52.On the dielectric window 52, generally coiled type is coaxially flatly configured with chamber 10 or pedestal 12RF antennas 54.The RF antennas 54 preferably have such as spiral winding (Fig. 2A) or in the constant concentric circular coils of each one week inside radiusThe form of (Fig. 2 B), and the antenna fixed component by being made up of insulator is (not shown) fixed on dielectric window 52.
In one end of RF antennas 54, via integrator 58 and the high frequency electric source of the electrical connection plasma generation of supply lines 6056 lead-out terminal.Although diagram is omitted, the other end of RF antennas 54 is electrically connected to ground current potential (グ ラ via ground wireApplication De Electricity positions) on.
High frequency electric source 56 is configured to be suitable to produce the certain of plasma by high-frequency discharge with variable power outputThe high-frequency RF of frequency (more than 13.56MHz)H.Integrator 58 is stored for (being mainly in the impedance of the side of high frequency electric source 56 and loadRF antennas, plasma, make corrections coil) the variable integrated circuit of the reactance integrated between the impedance of side.
For the processing gas supply unit being supplied to processing gas in the processing space in chamber 10, have：Than electricityThe ring-type manifold (manifold) or slow being arranged on the lower position of medium window 52 among the side wall of chamber 10 (outside or)Device portion 62 is rushed, is along the circumferential direction equally spaced discharged from buffer portion 62 in face of multiple side-wall gas of plasma generating spaceHole 64, and the gas supply pipe 68 extended from processing gas supply source 66 to buffer portion 62.Processing gas supply source 66 includesFlow controller and switch valve (not shown).
Inductively type plasma-etching apparatus is included to diametrically changeably control the place in chamber 10 for thisManage space in caused inductively coupled plasma Density Distribution and the atmospheric pressure space on the top plate of chamber 10 is arranged atThe correction coil 70 that can be coupled by electromagnetic induction with RF antennas 54 that sets of antenna chamber, and for changeably controllingThe switching mechanism 110 of the dutycycle of faradic energization is flowed in the correction coil 70.Make corrections coil 70 and switching mechanism 110Be structurally and functionally described in detail later.
Master control part 74 for example comprising microcomputer, controls each several part in the plasma-etching apparatus, such as arrangeDevice of air 26, high frequency electric source 30,56, integrator 32,58, electrostatic chuck switch 42, processing gas supply source 66, switching mechanism110, cooling unit (not shown), each action such as heat-conducting gas supply unit (not shown) and device it is overall action it is (suitableSequence).
In this inductively type plasma-etching apparatus, in order to be etched, first, make gate valve 28 for open state andProcessing object semiconductor wafer W is transported in chamber 10, and is positioned on electrostatic chuck 36.Also, gate valve 28 is closed, fromProcessing gas supply source 66 via gas supply pipe 68, buffer portion 62 and side-wall gas tap 64, with defined flow andFlow-rate ratio imports etching gas (generally mixed gas) in chamber 10, and makes the pressure in chamber 10 by exhaust apparatus 26For setting value.Further, it is ON to make high frequency electric source 56, so as to the high frequency of defined RF power outputs plasma generationRFH, and via integrator 58 and supply lines 60 by the high-frequency RFHElectric current is supplied to RF antennas 54.On the other hand, high-frequency electrical is madeSource 30 is ON, so as to the high-frequency RF of defined RF power outputs electro-ionic osmosis controlL, and via integrator 32 and power supplyRod 34 is by the high-frequency RFLIt is applied to pedestal 12.In addition, heat-conducting gas (such as He gas) is supplied to from heat-conducting gas supply unit quietContact interface between electric card disk 36 and semiconductor wafer W, and make switch 42 be ON, so as to pass through the electrostatic of electrostatic chuck 36Attraction and heat-conducting gas is enclosed on above-mentioned contact interface.
The etching gas discharged from side-wall gas tap 64 is uniformly spread to the processing space under dielectric window 52In.By the high-frequency RF for flowing through RF antennas 54HElectric current, magnetic line of force insertion dielectric window 52 is produced around RF antennas 54 and is passed throughThe RF magnetic fields of plasma generating space in chamber, and changed with time by the RF magnetic fields, along the orientation in processing spaceAngular direction produces RF induction fields.Also, make point of the electronics and etching gas accelerated along azimuth direction by the induction fieldIonization conflict occurs for son and atom, generates the plasma of doughnut shape.Base (the atom of the doughnut shape plasmaGroup) and ion greatly handle space in bleeding around, the flowing of base isotropically, ion is drawn under direct current biasing, fromAnd it is supplied to the upper surface (processed surface) of semiconductor wafer W.So, draw in the processed surface of wafer W, the activity of plasmaChemically reactive and physical reactions, so as to which machined membrane is etched into desired pattern.
In this inductively type plasma-etching apparatus, as described above, in the dielectric close with RF antennas 54Under window 52, plasma inductively is produced doughnut shape, the plasma of the doughnut shape is being handled greatlyDisperse in space, nearby equalize the density of plasma (i.e. in semiconductor wafer W) in pedestal 12.Here, doughnutThe density of shape plasma depends on the intensity of induction field, and then depending on the high-frequency RF being supplied on RF antennas 54HWork(The size of rate (electric current for more precisely flowing through RF antennas 54).That is, high-frequency RFHPower it is higher, doughnut shape plasmaThe density of body is higher, and the plasma density near pedestal 12 is integrally uprised by the diffusion of plasma.SeparatelyOn the one hand, the pressure that the form of doughnut shape plasma (particularly radial) diffusion everywhere is depended primarily in chamber 10,Pressure is lower, more in the plasma that the central part of chamber 10 is concentrated, so as to the plasma density distribution near pedestal 12There is increased tendency in central part.In addition, plasma density distribution in doughnut shape plasma is always according to being supplied toHigh-frequency RF on RF antennas 54HPower and the flow of processing gas etc. that imports in chamber 10 and change.
Here, so-called " plasma of doughnut shape " is not limited to not have in the radially inner side (central part) of chamber 10Plasma and the strict toroidal plasma only in radial outside with plasma, but mean the radial direction of chamber 10Outside is bigger than the volume or density of the plasma of radially inner side.In addition, according to gaseous species and chamber for processing gasThe conditions such as the pressure value in 10, also there is a situation where not forming described herein " plasma of doughnut shape ".
In the plasma-etching apparatus, by making the plasma density distribution near pedestal 12 diametrically uniformAfter change, by the way that the correction of electromagnetic field is carried out to RF magnetic fields caused by RF antennas 54 as correction ring 70, while according to process conditions(pressure in chamber 10 etc.) is made the energization variable duty ratio of correction coil 70 by switching mechanism 110.
Below, the He of correction ring 70 as the dominant features in this inductively type plasma-etching apparatus is illustratedSwitching mechanism 110 is structurally and functionally.
In more detail, as shown in fig. 6, correction coil 70 is clipped the circular single turn line of appropriate gap g and opening by both endsEnclose (or multiturn coil) to form, coaxially configured relative to RF antennas 54 so that coil-conductor is radially positioned RF antennas 54Between inner periphery and the outer periphery (preferably near its center), and flatly it is maintained at by insulating properties coil holding member (not shown)With RF antennas 54 on the position of close certain altitude.The material of correction coil 70 is preferably the gold of the high such as copper system of conductanceCategory.
Also, in the present invention, so-called " coaxial " is the overlapped position of each central axis of multiple coils or antennaRelation is put, situation about not only being offset from each other comprising each coil surface or antenna surface on axial direction or longitudinal direction, also included in sameConsistent situation (same heart shaped position relationship) on face.
Here, the structure of g very close to each other in the coil 70 that makes corrections is referred to as completely for no reason type correction coil 70', it is complete to thisFor no reason the effect in the case that type correction coil 70' height and position changes illustrates.
First, as shown in Figure 3A, when by type correction coil 70' height and position is arranged near higher limit for no reason completelyWhen, by the high-frequency RF for flowing through RF antennas 54HCaused RF magnetic fields H will not be by type is mended for no reason completely around antenna conductor for electric currentPositive coil 70' any influence, so as to form the ring-type magnetic force along radial direction by the processing space under dielectric window 52Line.
Radial direction (level) the composition Br of magnetic density in the process space is on the center of chamber 10 (O) and peripheryIn portion with high-frequency RFHSize of current is not related, always zero, in the radial direction with the center of the inner periphery and the outer periphery of RF antennas 54Between maximum on the overlapping position in side (hereinafter referred to as " antenna pars intermedia "), and high-frequency RFHElectric current is bigger, and its maximum is higher.The intensity distribution of the induction field of azimuth direction also has with the magnetic density Br on radial direction as caused by the H of RF magnetic fieldsIdentical distribution map.So, dielectric window 52 nearby and RF antennas 54 coaxially form doughnut shape plasma.
Also, doughnut shape plasma diffusion (particularly along radial direction) everywhere into processing space.As aboveIt is described, although the pressure that the spreading morphology is depended in chamber 10, an example is used as, as shown in Figure 3A, is represented in baseRadially electron density (plasma density) relatively high (holding on position corresponding with antenna pars intermedia near seat 12Maximum state), in the situation for the distribution map that central part and periphery reduce.
In this case, as shown in Figure 3 B, such as by type correction coil 70' height and position is reduced to for no reason completelyWhen near lower limit, as illustrated, the high-frequency RF by flowing through RF antennas 54HElectric current caused RF magnetic fields H around antenna conductorBy by the counteractive influence of type correction coil 70' electromagnetic induction for no reason completely.The reaction of the electromagnetic induction is basisInsertion completely for no reason the change of the magnetic line of force (magnetic flux) in type correction coil 70' ring and produce opposite effect, completeFor no reason induction power is produced in type correction coil 70' ring and streaming current.
So, by the way that type makes corrections the reaction of coil 70' electromagnetic induction for no reason completely, in type correction coil for no reason completelyThe position substantially directly below of 70' coil-conductor (particularly antenna pars intermedia), in the processing space near dielectric window 52Radial direction (level) the composition Br of magnetic density partly die down, the thus intensity of the induction field of azimuth directionPartly died down on position corresponding with antenna pars intermedia identically with magnetic density Br.As a result, near pedestal 12, electricitySub- density (plasma density) is diametrically suitably homogenized.
Plasma diffusion form as shown in Figure 3A is an example, such as when pressure is low, plasma is exceedinglyThe central part of chamber 10 is concentrated on, as shown in Figure 4 A, illustrates electron density (plasma density) phase near pedestal 12Situation in central part for maximum chevron distribution map over the ground.
Even if in this case, as shown in Figure 4 B, such as by type correction coil 70' is reduced to lower limit for no reason completelyWhen neighbouring, as illustrated, with for no reason on the position of the overlapping pars intermedia of type correction coil 70' coil-conductor, electricity is situated between completelyRadial direction (level) the composition Br of the magnetic density in processing space near matter window 52 partly dies down, thus plasmaThe concentration of body to chamber central part dies down, and the plasma density near pedestal 12 is diametrically by suitably uniformChange.
The present inventor demonstrates that as described above completely type makes corrections coil 70' work for no reason by electromagnetic field simulationWith.That is, using completely for no reason type make corrections coil 70' to the relative altitude positions of RF antennas 54 (distance is spaced) as parameter,5mm, 10m, 20mm, the value of selection parameter in four kinds of situations of infinitely great (do not make corrections coil), obtain doughnut shape etc. fromThe electric current distribution of the radial direction of (apart from upper surface 5mm position) inside daughter (equivalent to plasma density distribution)Afterwards, the result as shown in Figure 5 is obtained.
The electromagnetic field simulation in, the external diameter (radius) of RF antennas 54 is set as 250mm, will completely for no reason type correction lineThe inner circumferential radius and peripheral radius for enclosing 70' are respectively set as 100mm and 130mm.Handled in the chamber of the lower section of RF antennas 54In space, simulated by inductively caused doughnut shape plasma by the resistive element of disc-shape, the resistive elementDiameter is set as 500mm, and resistivity is 100 Ω cm, epidermal thickness 10mm.The high-frequency RF of plasma generationHFrequencyFor 13.56MHz.
It can be seen from Fig. 5, configure on the height and position coupled by electromagnetic induction with RF antennas 54 and mended completely without end typeDuring positive coil 70', and the plasma density in doughnut shape plasma is in the coil-conductor with the coil 70 that makes correctionsWhen overlapping position (being the position overlapping with antenna pars intermedia in the example in the figures) locally around reduces, make completely for no reasonType makes corrections coil 70' close to RF antennas 54, and its local reduction degree substantial linear change is greatly.
In inductively type plasma-etching apparatus (Fig. 1) preferably, instead of using as described above completeMaked corrections coil 70' completely without end type, as shown in fig. 6, using clipping appropriate gap g by both ends and the single-turn circular coil of opening is (or moreCircle coil) form correction coil 70, be connected with switch element 112 between two open ends of the correction coil 70.
Switching mechanism 110 has by pulse width modulation (PWM) with certain frequency (such as 1~100kHz) to the switchElement 112 carries out the ON-OFF control circuit 114 of ON/OFF control or switch control.
A specific configuration example for switching mechanism 110 is represented in the figure 7.In the configuration example, as switch element 112,A pair of transistor (such as IGBT or MOS transistor) 112A, 112B is mutually oppositely connected in parallel, with each transistor 112A,112B is connected in series diode 116A, 116B of reverse bias protection.
Two transistor 112A, 112B are by the pwm control signal SW from ON-OFF control circuit 114 while ON/OFF.In ONPeriod, the positive positive polarity induced-current i for flowing through correction coil 70 in the first half cycle of high frequency+Flow through the first transistor 112AWith the first diode 116A, flowed counterflow through in rear half of half period of high frequency correction coil 70 negative polarity induced-current i-StreamCross second transistor 112B and the second diode 116B.
Although being omitted in figure, ON-OFF control circuit 114 is for example with the triangular signal for producing above-mentioned certain frequencyCircuit for generating triangular wave, with variable voltage corresponding with desired dutycycle (ratio during pulse ON in a cycle) electricityShow no increases in output the variable voltage signal generation circuit of raw voltage signal, by above-mentioned triangular signal and each electricity of above-mentioned variable voltage signalVoltage level is compared and produces the pwm control signal SW of two-value corresponding with its magnitude relationship comparator, and is controlled by PWMSignal SW driving two transistors 112A, 112B drive circuit.It is desirable here that dutycycle by master control part 74 by definedControl signal SDIt is supplied to ON-OFF control circuit 114.
According to the embodiment, by the switching mechanism 110 of structure as described above, in plasma treatment procedure byPWM is controlled to control the energization dutycycle of correction coil 70, as shown in figure 8, can arbitrarily may be used in the range of 0%~100%Become ground and control the energization dutycycle.
It is important in this that controlling by PWM as described above, make to flow through the logical of induced-current i in the coil 70 that makes correctionsElectric dutycycle in the range of 0%~100% it is any it is variable be with making above-mentioned type correction coil 70' height and position for no reason completelyHome position H near upper limit positionPSituation arbitrarily variable is in work(between the lower position close with RF antennas 54It is equivalent on energy.If, can be by the way that correction coil 70 be fixed to RF days by switching mechanism 110 from the point of view of at different anglesOn height and position near line 54, and Fig. 5 characteristic is realized on device.Thereby, it is possible to simply realize plasma densityThe raising of the free degree and precision of distributed controll.
Therefore, whenever all or part of change of the treatment conditions in processing scheme, by switching mechanism 110 changeablyThe energization dutycycle of control correction coil 70, so as to adjust arbitrarily and subtly correction coil 70 to by flowing through RF antennas54 high-frequency RFHElectric current caused RF magnetic fields H around antenna conductor effect, that is, adjust and led in the coil with the coil 70 that makes correctionsMake the degree for the effect that the plasma density in doughnut shape plasma partly reduces (strong on the folded position side of body weightIt is weak).
Inductively type plasma-etching apparatus in this embodiment can be preferably applied to for example by multiple stepsSuddenly continuously in the application of the multilayer film of etching and processing substrate surface.Below, illustrate as shown in Figure 9 according to multilayer resist methodEmbodiments of the invention.
In fig.9, on the main surface of processing object semiconductor wafer W, in machined membrane (such as the grid Si of scriptFilm) SiN layer 102 as orlop (final mask) is formed on 100, be formed on as intermediate layer organic film (such asCarbon) 104, over which the photoresist 108 of the formation of antireflection film (BARC) 106 the superiors containing Si.In SiN layer102nd, produced in the film forming of organic film 104 and antireflection film 106 using CVD (chemical vacuum deposition methods) or spinning (spin on)Raw coated film, photoetching process is used in the patterning of photoresist 108.
Initially, the etch process as first step, as shown in Fig. 9 (A), the conduct of photoresist 108 that will be patterned intoMask, etch the antireflection film 106 containing Si.In this case, using CF4/O2Mixed gas as etching gas,And the pressure in chamber 10 is set to relatively low, such as 10mTorr.
Next, the etch process as second step, as shown in Fig. 9 (B), photoresist 108 and reflection are preventedFilm 106 is used as mask, etching and processing organic film 104.In this case, using O2Simple gas as etching gas, andAnd the pressure in chamber 10 is set to lower, such as 5mTorr.
Finally, as the etch process of third step, as shown in Fig. 9 (C), (D), the antireflection film 106 that will be patterned intoMask, etching and processing SiN film 102 are used as with organic film 104.In this case, using CHF3/CF4/Ar/O2Mixed gasAs etching gas, and the pressure in chamber 10 is set to higher, such as 50mTorr.
In the etch process of multi-step as described above, switch all or part of process conditions in each step(pressure particularly in chamber 10), thus change the spreading morphology of the doughnut shape plasma in processing space.Here,Do not make correction coil 70 completely operation (energization) in the case of, the first and second steps technique (pressure 10mTorr withUnder) in, as shown in Figure 4 A, the electron density (plasma density) near pedestal 12 show relatively in central part significantlyThe distribution of increased steep chevron, in the technique (pressure 50mTorr) of third step, shows only in the increased mitigation of central partThe distribution of chevron.
According to the embodiment, such as in processing scheme, in common process conditions (high frequency power, pressure, gas kindClass, gas flow etc.) in increased condition, or in the condition being associated, by the energization duty of coil 70 that makes correctionsThan one be set as in scheme information or technological parameter.Also, in the etch process for performing multi-step mode as described aboveWhen, master control part 74 reads the data for representing energization dutycycle from memory, and passes through switching mechanism in each step110 make the energization dutycycle of correction coil 70 meet setting value.
For example, in the case of the multi-step etching process that the multilayer resist method implemented by such as Fig. 9 is carried out, such as Figure 10 institutesShow, the energization dutycycle of switching correction coil 70, switches to larger account in first step (10mTorr) in each stepSky compares D1, bigger dutycycle D is switched in second step (5mTorr)2, switched in third step (50mTorr) compared withSmall dutycycle D3。
In addition, according to the viewpoint of plasma igniting, after the processing of each step starts, by the logical of the coil 70 that makes correctionsElectricity is forced to remain OFF state, so that plasma stability is positively lighted a fire, and after plasma ignition, makes itThe method for meeting the energization dutycycle of setting value is also effective.
Second embodiment
Next, with reference to figure 11~14, illustrate second embodiment of the present invention.
The structure of the inductively type plasma processing apparatus in second embodiment is represented in fig. 11.In figure,Part with device (Fig. 1) identical structure or function with above-mentioned first embodiment provides identical symbol.
The feature of the second embodiment compares with above-mentioned first embodiment, instead of switching mechanism 110, is configured to wrapInclude resistance-variable mechanism 120.
In more detail, correction coil 70 is clipped the circular single-turn circular coil or multiturn of appropriate gap g and opening by both endsCoil is formed, and is coaxially configured relative to RF antennas 54 so that coil-conductor is radially positioned the inner periphery and the outer periphery of RF antennas 54Between (preferably at its center near), and be flatly maintained at and RF antennas 54 by insulating properties coil holding member (not shown)On close height and position.
As shown in figure 12, resistance-variable mechanism 120 has the variable resistor being connected on two open ends of correction coil 70122, and the resistance control unit 124 by the resistance value control of the variable resistor 122 for desired value.
The concrete structure example of resistance-variable mechanism 120 is represented in fig. 13.Variable resistor 122 in the configuration example hasThe high gold of the resistivity inserted by insulator 126 in a manner of filling in the gap g between two open ends of correction coil 70Category system or carbon system resistive element 128, and it is on coil 70 that the cross-linking type of the point-to-point transmission short circuit at interval spaced apart is short making correctionsRoad conductor 130.The material of cross-linking type short-circuit conductor 130 is preferably the metal of the high such as copper system of conductance.
Resistance control unit 124, which has, to be used to support cross-linking type short-circuit conductor 130 and it is slided shifting on correction coil 70Dynamic sliding equipment 132, and the position of cross-linking type short-circuit conductor 130 is met desired resistance by the sliding equipment 132The resistance position control unit 134 of position.
In more detail, switching mechanism 132 is made up of ball screw framework, is had horizontal-extending on certain position for makingTransmission leading screw 136 rotate stepping motor 138, and with transmit the screw thread couple of leading screw 136 nut portions (not shown), andBy because transporting the rotation of leading screw 136 and the slider body 140 that is axially moved horizontally along it, with the slider body 140 and crosslinkingThe compression disc spring (U イ Le バ ネ) 142 and a pair of cylinders being slideably fitted together in vertical direction that type short-circuit conductor 130 combinesBody 144,146 is formed.Here, the cylinder 144 in outside is fixed on slider body 140, the cylinder 146 of inner side is fixed on friendshipOn connection type short-circuit conductor 130.Cross-linking type short-circuit conductor 130 is pressed against on correction coil 70 by compression disc spring 142 by elastic force.
Resistance position control unit 134 controls cross-linking type short circuit to lead by the rotation direction and amount of spin of stepping motor 138The position of body 130.The target location of cross-linking type short-circuit conductor 130 passes through defined control signal S by master control part 74 (Figure 11)RSupply to resistance position control unit 134.
Here, with reference to figure 13 and Figure 14 A~14C, illustrate the effect of resistance-variable mechanism 120.
First, when cross-linking type short-circuit conductor 130 is arranged into the position represented in Figure 13, the coil of correction coil 70 is ledThe both ends of body are bypassed and are short-circuited by cross-linking type short-circuit conductor 130 without resistive element 128.Thus, the electricity of variable resistor 122Resistance forms minimum (being essentially zero), and the whole coil resistance value for the coil 70 that thus makes corrections forms minimum.
From Figure 13 state, right of the cross-linking type short-circuit conductor 130 into figure is set to slide movement, position is defined as Figure 14 AThe position of middle expression.On the position, the contact site 130R of one end (right-hand member) of cross-linking type short-circuit conductor 130 is connected to coil and ledIn one end (right-hand member) portion of body, and the contact site 130L of the other end (left end) exceedes the other end (left end) of coil-conductor and enteredIn the section of resistive element 128.Thus, the resistance value of variable resistor 122 forms the significant value being not zero, and correction coil 70 is wholeThe coil resistance of body becomes high during than Figure 13.
From Figure 14 A state, when making right slip of the cross-linking type short-circuit conductor 130 further into figure mobile, resistive element128 account for the siding-to-siding block length increase of the current path of correction coil 70, and the resistance value of such variable resistor 122 becomes higher, maked correctionsThe overall coil resistance of coil 70 becomes higher during than Figure 14 A.
Also, as shown in Figure 14B, when the contact site 130L for the left end for making cross-linking type short-circuit conductor 130 is moved to resistive elementDuring the other end of 128 side of insulator 126, the siding-to-siding block length that resistive element 128 accounts for the current path of correction coil 70 is maximum.ByThis, the resistance value of variable resistor 122 is maximum, and 70 overall coil resistance of correction coil is maximum.
In addition, from Figure 14 B state, right of the cross-linking type short-circuit conductor 130 further into figure is slided movement, such as schemeShown in 14C, the line on right side is moved to when the contact site 130L for the left end for making cross-linking type short-circuit conductor 130 crosses insulator 126When enclosing conductor, correction coil 70 is electrically being cut off by insulator 126, so as to substantially constitute the state of both ends open.If fromOther angles understand that the resistance value of variable resistor 122 becomes infinitely great.
So, in this embodiment, the resistance value of variable resistor 122 is changeably controlled by resistance-variable mechanism 120, such asIt is upper described, enable the overall coil resistance of correction coil 70 from the minimum resistance (Figure 13) for the coil for being equal to both ends closureFor continuous variable to the maximum resistance (Figure 14 A, Figure 14 B) comprising 128 whole section of resistive element, being further configured to can alsoSelection is equal to the coil dissengaged positions (Figure 14 C) of of no help positive coil 70.
Thus, when flowing through high-frequency RF in RF antennas 54H, can be in the range of 0%~100% arbitrarily changeably during electric currentControl is by electromagnetic induction and the current value (amplitude or tip value) of the electric current that is flowed in the coil 70 that makes corrections.Here, electric currentValue 100% is equivalent to the current value when being flowed on the position of coil short-circuit condition (Figure 13), and current value 0% is equivalent in coilCurrent value when being flowed on the position (Figure 14 C) of dissengaged positions.
It is important in this that being controlled by the resistance-variable for the coil 70 that makes corrections as described above, make in the coil 70 that makes correctionsIt is with making above-mentioned completely for no reason type correction coil 70' that the current value of the electric current of flowing is arbitrarily variable in the range of 0%~100%Home position H of the height and position near upper limit positionPIt is arbitrarily variable between the lower position close with RF antennas 54Situation it is functionally equivalent.If understanding from other angles, by resistance-variable mechanism 120, the coil that will make corrections can be passed through70 are fixed on the height and position near RF antennas 54, and Fig. 5 characteristic are realized on device, so as to above-mentioned first embodiment partyFormula in the same manner, can more simply realize the raising of the free degree and precision of plasma density distribution control.
Therefore, when changing the value of the regulation technological parameter in processing scheme, by resistance-variable mechanism 120 changeablyThe amplitude of the electric current flowed in control correction coil 70, so as to adjust arbitrarily and subtly correction coil 70 to by flowingCross the high-frequency RF of RF antennas 54HElectric current caused RF magnetic fields H around antenna conductor effect, that is, adjust with make corrections coil 70The overlapping position side of coil-conductor on make the effect that the plasma density in doughnut shape plasma partly reducesDegree (power).Thus, by Overall Steps, it can diametrically keep the plasma density near pedestal 12 uniform,It and can improve the uniformity of the etching process in multilayer resist method.
For example, in the case where implementing the multi-step etching process by the multilayer resist method progress with Fig. 9, although in figureOmit, it is preferred that switching the resistance value (resistance position) of variable resistor 122 in each step, in first stepRelatively low resistance value (resistance position) R is switched in (10mTorr)1, lower electricity is switched in second step (5mTorr)Resistance (resistance position) R2, higher resistance value (resistance position) R is switched in third step (50mTorr)3。
In addition, according to the viewpoint of plasma igniting, after the processing of each step starts, correction coil 70 is keptIn the state (Figure 14 C) electrically cut off, so that plasma stability is positively lighted a fire, and after plasma ignition,It is effective variable resistor 122 is met the method for presetting resistance value (resistance position).
Variation
A variation of the correction coil 70 and switching mechanism 110 in above-mentioned first embodiment is represented in fig.15.In the embodiment, configure to concentric circles (or coaxial) different multiple (such as two) of coil diameter make corrections coil 70A,70B, switch element 112A, 112B are set respectively in these correction coils 70A, 70B ring.Also, it is configured to by singleON-OFF control circuit 114A, 114B be arbitrarily powered dutycycle by PWM control separately controlling switch element 112A,112B ON/OFF.
A deformation of correction coil 70 and resistance-variable mechanism 120 in the above-described 2nd embodiment is represented in figure 16Example.In this embodiment, different multiple (such as two) correction line of coil diameter is configured to concentric circles (or coaxial)70A, 70B are enclosed, variable resistor 122A, 122B are set respectively in these correction coils 70A, 70B ring.Also, be configured to bySingle resistance control unit 124A, 124B are independently and any resistance value for changeably controlling variable resistor 122A, 122B.
, can be arbitrarily and more in Figure 15 switching mechanism 110, and in Figure 16 resistance-variable mechanism 120Kind diversely selects the group of the faradic value (energization dutycycle or sophisticated value) flowed in two correction coils 70A, 70BClose, and can larger increase the free degree of plasma density distribution control.
In addition, as shown in Figure 17 A, additionally it is possible to correction coil 70B is maintained at non-action (non-energized) state, and only makes benefitPositive coil 70A actions (energization).Or as seen in this fig. 17b, correction coil 70A can be maintained at non-action (non-energized) shapeState, and correction coil 70B is acted (energization).In addition, as shown in Figure 17 C, additionally it is possible to make two correction coils 70A, 70B sameWhen act (energization).
3rd embodiment
As other embodiments, msy be also constructed in the above-described first embodiment replace switching mechanism 110For switching mechanism 150 as shown in figure 18.The switching mechanism 150 has two open ends that correction coil 70 is connected to via conductorDerailing switch 152, the switch of switch (ON/OFF) state based on the instruction switching control derailing switch 152 from master control part 74Control circuit 154.
In the switching mechanism 150, when derailing switch 152 is switched into disconnection (OFF) state, due in correction coil 70Induced-current is not flowed, so being equivalent to the situation for the coil 70 that do not make corrections.When derailing switch 152 is switched into closure (ON) shapeDuring state, correction coil 70 is equivalent to the coil of both ends closure, when flowing high-frequency RF in RF antennas 54HDuring electric current, in correction coilInduced-current is flowed in 70.
As shown in figure 19, additionally it is possible to suitable for such switching mechanism 150 is configured into multiple benefits with being applied to concentric circlesPositive coil 70A, 70B structure.That is, configure to concentric circles different multiple (such as two) of coil diameter make corrections coil 70A,70B, connecting valve device 152A, 152B are inserted respectively in these correction coils 70A, 70B.And it is possible to by individually switchingControl circuit 154A, 154B separately switchs controlling switch device 152A, 152B.Although controlled in such derailing switch modeThere is a certain degree of limitation in the free degree of system, but can carry out such as Figure 17 A~17C current density (doughnut shapeThe density of gas ions) distribution variable control.
In addition, in the case where setting switching mechanism 150 as described above, preferably can use to a processed baseIn the corona treatment of plate, according to the change, change or switching of process conditions, controlling switch device 150 (152A, 152B's) opensThe method of off status.
For example, in the etching process (Fig. 9) of the multi-step carried out with multilayer resist method as described above, using such as figureThe situation of 18 single type correction coil 70 (derailing switch 152), as shown in figure 20, switches to derailing switch 152 in first step(OFF) state of disconnection, switches to closure (ON) state by derailing switch 152 in second step, cuts derailing switch 152 in third stepIt is changed to disconnection (OFF) state.
In addition, using the situation of double type correction coil 70A, 70B (derailing switch 152A, 152B) such as Figure 19, such as Figure 21It is shown, derailing switch 152A, 152B are switched into disconnection (OFF) state jointly in first step, in second step by derailing switch152A, 152B switch to closure (ON) state jointly, and derailing switch 152A is switched into disconnection (OFF) shape respectively in third stepState, derailing switch 152B is switched to closure (ON) state.
In addition, as shown in figure 22, configured to coaxial side by side along longitudinal direction multiple (such as three) make corrections coil 70A,In 70B, 70C structure, can use derailing switch 152A, 152B, 152C and ON-OFF control circuit 154A same as described above,154B, 154C (diagram is omitted).
As the other embodiment related to correction coil 70, as shown in figure 23, msy be also constructed to optionally switchThe independent pattern that multiple (such as three) coil-conductors 70 (1), 70 (2), 70 (3) are run as single correction coilWith the connection mode as a correction coil operation for being electrically coupled connection.
In fig 23, each coil-conductor 70 (1), 70 (2), 70 (3) are clipped the annular shape of appropriate gap and opening by both endsSingle-turn circular coil (or multiturn coil) is formed, and these gaps can switch 160,162,164 and switch 166 by three switchingsIt is electrically connected in different modes.
First switching switch 160 has the first fixed contact being connected to most on coil-conductor 70 (1) one end of inner side160a, the travelling contact 160b being connected on coil-conductor 70 (1) other end, and it is connected to adjacent intermediate coil conductor 70(2) the second fixed contact 160c on one end.
Second switching switch 162 has the first fixed contact 162a being connected on intermediate coil conductor 70 (2) one end, evenThe travelling contact 162b being connected on coil-conductor 70 (2) other end, and it is connected to adjacent coil-conductor 70 (3) one end in outsideOn the second fixed contact 162c.
3rd switching switch 164 has the first fixed contact 164a being connected on outer coil conductor 70 (3) one end, evenThe travelling contact 164b being connected on coil-conductor 70 (3) other end, and the be connected on the travelling contact 166d of switch 166Two fixed contact 164c.
The fixed contact 166e of switch 166 is connected to one end of inner coil conductor 70 (1).
In dependency structure, when selecting above-mentioned independent pattern, the first switching is switched to 160 travelling contact 160b switchingsTo the first fixed contact 160a, the travelling contact 162b that the second switching is switched to 162 is switched to the first fixed contact 162a, by theThe travelling contact 164b of three switching switches 164 is switched to the first fixed contact 164a, and switch 166 is switched into off-state.
When selecting above-mentioned connection mode, the travelling contact 160b of the first switching switch 160 is switched to the second fixation and connectPoint 160c, the travelling contact 162b that the second switching is switched to 162 are switched to the second fixed contact 162c, and the 3rd switching is switched164 travelling contact 164b is switched to the second fixed contact 164c, and switch 166 is switched into closure state.
As a variation of the embodiment, such as can be configured in three coil-conductors 70 (1), 70 (2), 70(3) in, any two coil-conductor is selected to select remaining one such switch electricity for independent pattern for connection modeRoad network.
In addition, big induced-current (the now electricity to be flowed in RF antennas can be flowed in the correction coil of the present inventionThe more than stream electric current of (being larger than)), to pay close attention to the heating of correction coil.
, as shown in fig. 24 a, can be by setting air cooling fan near correction coil 70 according to the viewpoint, and setThe coil cooling end cooled down in a manner of being gas-cooled.Or as shown in fig. 24b, correction coil can also be formed by hollow copper pipe70, and the coil cooling end that refrigerant is supplied to and wherein prevents correction coil 70 from overheating is set.
The structure of inductively type plasma-etching apparatus in the above-described embodiment is an example, not only wait fromThe each several part of daughter generating mechanism can carry out various modifications, and generate each several part being not directly dependent upon with plasmaStructure is it is also apparent that various modifications can be carried out.
Although for example, making corrections the fixed configurations of coil 70 in the above-described embodiment in a region, can also adoptWith the structure for the position that can change correction coil 70, it particularly can arbitrarily change the structure of its height and position.
In addition, in the current path or ring of correction coil 70, except above-mentioned switch element 112, resistance 122 or derailing switchBeyond 152 (152A, 152B, 152C), such as it msy be also constructed to the structure there is provided capacitor (not shown).
In addition, the grown form as RF antennas 54 and correction antenna 70, the type that can be configured to beyond flat shape,Such as cheese (dome) etc..Further, additionally it is possible to be arranged on the type on the region beyond the top of chamber 10, such asCan be to be arranged on spiral shape (helical) type outside the side wall of chamber 10.
Also can be rectangle it is further possible to be the chamber structure using the processed substrate of rectangle as object (to The Ru)RF antenna structures, the correction loop construction of rectangle.
In addition, in processing gas supply unit, msy be also constructed to import in chamber 10 from top by processing gas, andThe high-frequency RF of direct current biasing control is not applied on pedestal 12LMode it is also possible.On the other hand, the present invention can alsoPlasma is generated into use applied to using multiple RF antennas or antenna/section, and by multiple high frequency electric sources or high frequency electric power systemHigh frequency power be separately supplied to the plasma device of the mode in these multiple RF antennas (or antenna/section).
And then inductively type plasma processing apparatus of the invention or method of plasma processing are not limited to plasmaThe technical field of body etching, plasma CVD, plasma oxidation, pecvd nitride, sputtering etc. its can also be applied toIn his plasma process.In addition, the processed substrate in the present invention is not limited to semiconductor wafer, also can be flat-panel monitorVarious substrates, photomask, CD substrates or printed base plate etc..