技术领域technical field
本发明涉及显示技术领域，尤其涉及一种显示背板及其制作方法、显示装置。The invention relates to the field of display technology, in particular to a display backplane, a manufacturing method thereof, and a display device.
背景技术Background technique
氧化物背板因其优异的性能被广泛关注。但氧化物背板的性能容易受热量、光照等因素影响，特别是利用氧化物背板制作的AMOLED显示屏。由于有源矩阵有机发光二极体(Active-matrix OrganicLight-Emitting Diode，AMOLED)是电流驱动，因此在点亮过程中，氧化物背板的温度容易升高，从而影响氧化物背板性能，出现显示亮度下降，寿命缩短，大尺寸显示亮度不均匀等问题。Oxide backplanes have attracted widespread attention due to their excellent properties. However, the performance of the oxide backplane is easily affected by factors such as heat and light, especially for AMOLED displays made of oxide backplanes. Since the active matrix organic light-emitting diode (Active-matrix Organic Light-Emitting Diode, AMOLED) is driven by current, the temperature of the oxide backplane tends to rise during the lighting process, which affects the performance of the oxide backplane. The brightness of the display is reduced, the life is shortened, and the brightness of the large-size display is uneven.
发明内容Contents of the invention
针对现有技术中的缺陷，本发明的一个目的是降低OLED所产生的热量对显示背板的影响。In view of the defects in the prior art, an object of the present invention is to reduce the influence of the heat generated by the OLED on the display backplane.
本发明提供了一种显示背板，包括基底、形成在所述基底上的有机发光元件阵列和用于对所述有机发光元件阵列进行驱动控制的晶体管阵列，还包括形成在所述有机发光元件阵列和所述晶体管阵列之间的隔热层，所述隔热层上设置有隔热层过孔，所述晶体管阵列通过所述隔热层过孔与所述有机发光元件阵列连接。The present invention provides a display backplane, which includes a base, an array of organic light emitting elements formed on the base, and a transistor array for driving and controlling the array of organic light emitting elements, and also includes an array of organic light emitting elements formed on the array of organic light emitting elements. A heat insulating layer between the array and the transistor array, the heat insulating layer is provided with a heat insulating layer via hole, and the transistor array is connected to the organic light emitting element array through the heat insulating layer via hole.
进一步的，还包括形成在所述有机发光元件阵列和所述晶体管阵列之间的钝化层，所述隔热层位于所述钝化层与所述有机发光元件阵列中的有机发光元件的底电极之间；Further, it also includes a passivation layer formed between the organic light emitting element array and the transistor array, and the heat insulating layer is located at the bottom of the passivation layer and the organic light emitting elements in the organic light emitting element array between electrodes;
所述钝化层上形成有钝化层过孔，所述钝化层过孔与所述隔热层过孔的位置对应，所述晶体管阵列中的晶体管的漏极通过所述钝化层过孔和所述隔热层过孔连接所述有机发光元件阵列中有机发光元件的底电极。A passivation layer via hole is formed on the passivation layer, and the position of the passivation layer via hole corresponds to the position of the heat insulation layer via hole, and the drains of the transistors in the transistor array pass through the passivation layer via hole. The holes and the heat insulating layer are connected to the bottom electrodes of the organic light emitting elements in the organic light emitting element array through the holes.
进一步的，所述隔热层过孔的坡度角小于或等于60°。Further, the slope angle of the via hole of the heat insulation layer is less than or equal to 60°.
进一步的，所述隔热层过孔的坡度角为40-60°。Further, the slope angle of the via hole of the heat insulation layer is 40-60°.
进一步的，还包括：形成在所述有机发光元件阵列远离所述晶体管阵列的一侧的导热层。Further, it also includes: a thermal conduction layer formed on the side of the organic light-emitting element array away from the transistor array.
进一步的，还包括：用于对形成了所述有机发光元件阵列和晶体管阵列的基底进行封装的封装层，所述导热层形成在所述有机发光元件阵列和所述封装层之间。Further, it also includes: an encapsulation layer for encapsulating the substrate on which the organic light-emitting element array and the transistor array are formed, and the heat conduction layer is formed between the organic light-emitting element array and the encapsulation layer.
进一步的，还包括设置在所述封装层远离所述有机发光元件阵列一侧的盖板和散热层，所述盖板设置在所述散热层和所述封装层之间。Further, it also includes a cover plate and a heat dissipation layer disposed on the side of the encapsulation layer away from the array of organic light emitting elements, and the cover plate is disposed between the heat dissipation layer and the encapsulation layer.
进一步的，所述散热层包括散热片和散射销，所述散热销形成在所述散热片远离所述盖板的一侧。Further, the heat dissipation layer includes heat dissipation fins and diffusion pins, and the heat dissipation pins are formed on a side of the heat dissipation fins away from the cover plate.
本发明还提供了一种显示背板的制作方法，包括：The present invention also provides a method for manufacturing a display backplane, including:
在基底上形成有机发光元件阵列和用于对所述有机发光元件阵列进行驱动控制的晶体管阵列，以及在所述有机发光元件阵列和所述晶体管阵列之间的隔热层，所述隔热层上形成有隔热层过孔，所述晶体管阵列通过所述隔热层过孔与所述有机发光元件阵列连接。An array of organic light emitting elements, a transistor array for driving and controlling the array of organic light emitting elements, and a heat insulating layer between the array of organic light emitting elements and the array of transistors are formed on the substrate, and the heat insulating layer A heat insulating layer via hole is formed on it, and the transistor array is connected to the organic light emitting element array through the heat insulating layer via hole.
进一步的，该方法还包括：在所述有机发光元件阵列远离所述晶体管阵列的一侧形成导热层。Further, the method further includes: forming a heat conduction layer on a side of the organic light emitting element array away from the transistor array.
进一步的，该方法还包括：形成用于对形成了所述有机发光元件阵列和晶体管阵列的基底进行封装的封装层；Further, the method further includes: forming an encapsulation layer for encapsulating the substrate on which the organic light-emitting element array and the transistor array are formed;
所述在所述有机发光元件阵列远离所述晶体管阵列的一侧形成导热层包括：The forming a heat conduction layer on the side of the organic light-emitting element array away from the transistor array includes:
在所述有机发光元件阵列和所述封装层之间形成导热层。A heat conduction layer is formed between the organic light emitting element array and the encapsulation layer.
进一步的，该方法还包括：Further, the method also includes:
在所述封装层远离所述有机发光元件阵列一侧形成盖板和散热层，所述盖板形成在所述散热层和所述封装层之间。A cover plate and a heat dissipation layer are formed on a side of the encapsulation layer away from the organic light emitting element array, and the cover plate is formed between the heat dissipation layer and the encapsulation layer.
进一步的，该方法还包括：Further, the method also includes:
形成在所述有机发光元件阵列和所述晶体管阵列之间的钝化层，所述隔热层位于所述钝化层与所述有机发光元件阵列中的有机发光元件的底电极之间；A passivation layer formed between the organic light emitting element array and the transistor array, the heat insulating layer is located between the passivation layer and the bottom electrode of the organic light emitting element in the organic light emitting element array;
形成所述隔热层包括：Forming the heat insulating layer includes:
将隔热材料和光刻胶的混合材料涂覆到所述钝化层上；coating a mixed material of heat insulating material and photoresist on the passivation layer;
采用光刻工艺对涂覆到钝化层上的混合材料进行曝光和显影，形成具有隔热层过孔的隔热层。The mixed material coated on the passivation layer is exposed and developed by a photolithography process to form a heat insulation layer with via holes in the heat insulation layer.
本发明还提供了一种显示装置，包括上述任一项所述的显示背板。The present invention also provides a display device, comprising the display backplane described in any one of the above.
本发明提供的显示背板中，在有机发光元件阵列和所述晶体管阵列之间形成有隔热层，所述隔热层上设置有隔热层过孔，所述晶体管阵列通过所述隔热层过孔与所述有机发光元件阵列连接。这样，能够减少有机发光元件阵列在发光时所产生的热量传导到晶体管阵列，从而避免由此引起的显示不均等问题。In the display backplane provided by the present invention, a heat insulating layer is formed between the organic light-emitting element array and the transistor array, and heat insulating layer via holes are arranged on the heat insulating layer, and the transistor array passes through the heat insulating layer. The layer via holes are connected to the array of organic light emitting elements. In this way, the conduction of heat generated by the organic light-emitting element array to the transistor array when emitting light can be reduced, thereby avoiding problems such as display unevenness caused thereby.
附图说明Description of drawings
图1为本发明一实施例提供的一种显示背板的结构示意图；FIG. 1 is a schematic structural diagram of a display backplane provided by an embodiment of the present invention;
图2为图1中的散热层16的一种可能的结构的示意图。FIG. 2 is a schematic diagram of a possible structure of the heat dissipation layer 16 in FIG. 1 .
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他的实施例，都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
本发明的显示背板，包括基底、形成在基底上的有机发光元件阵列和用于对有机发光元件阵列进行驱动控制的晶体管阵列，还包括形成在有机发光元件阵列和晶体管阵列之间的隔热层，隔热层上设置有隔热层过孔，所述晶体管阵列通过隔热层过孔与有机发光元件阵列连接。The display backplane of the present invention includes a substrate, an array of organic light-emitting elements formed on the substrate, and a transistor array for driving and controlling the array of organic light-emitting elements, and also includes a thermal insulation layer formed between the array of organic light-emitting elements and the array of transistors. The heat insulating layer is provided with a heat insulating layer via hole, and the transistor array is connected with the organic light emitting element array through the heat insulating layer via hole.
由于在有机发光元件阵列和晶体管阵列之间形成有隔热层，隔热层上设置有隔热层过孔，晶体管阵列通过隔热层过孔与有机发光元件阵列连接。这样，能够减少有机发光元件阵列在发光时所产生的热量传导到晶体管阵列，从而避免由此引起的显示不均等问题。Since a heat insulating layer is formed between the organic light emitting element array and the transistor array, the heat insulating layer via holes are arranged on the heat insulating layer, and the transistor array is connected to the organic light emitting element array through the heat insulating layer via holes. In this way, the conduction of heat generated by the organic light-emitting element array to the transistor array when emitting light can be reduced, thereby avoiding problems such as display unevenness caused thereby.
如图1所示，为本发明一实施例提供的一种显示背板的结构示意图，该显示背板包括：As shown in FIG. 1 , it is a schematic structural diagram of a display backplane provided by an embodiment of the present invention. The display backplane includes:
基板玻璃1，形成在所述基板玻璃1上的栅电极图形2、形成在所述栅电极图形2和基板玻璃1之上的栅绝缘层3、形成在所述栅绝缘层3之上的有源层图形4，形成在所述有源层图形4之上的源漏电极图形5、形成在所述有源层图形4和所述源漏电极图形5之上的钝化层6、形成在所述钝化层6之上的隔热层7、形成所述隔热层7之上的树脂层8、形成在所述树脂层8之上的像素界定层图形9、底电极图形10、发光层图形11、顶电极图形12，形成在所述像素界定层图形9和顶电极图形12之上的导热层13、形成在所述导热层13之上的封装层14、形成在所述封装层14上的盖板玻璃15、形成在所述盖板玻璃15之上的散热层16。其中，所述有源层图形4可以由金属氧化物、多晶硅、非晶硅等半导体材料形成；钝化层6、隔热层7和树脂层8中对应形成有钝化层过孔、隔热层过孔和树脂层过孔，钝化层过孔、隔热层过孔和树脂层过孔的位置对应，顶电极图形12通过位置对应的上述过孔与源漏电极图形5相连。这里的栅电极图形2、栅绝缘层3、有源层图形4、源漏电极图形5共同构成晶体管阵列，底电极图形10、发光层图形11、顶电极图形12共同构成有机发光元件阵列。基板玻璃1是基底的一种情况，此外，基底还可以采用透明树脂、石英、蓝宝石等材料形成的基板，本发明不做限制。A substrate glass 1, a gate electrode pattern 2 formed on the substrate glass 1, a gate insulating layer 3 formed on the gate electrode pattern 2 and the substrate glass 1, an insulating layer formed on the gate insulating layer 3 source layer pattern 4, a source drain electrode pattern 5 formed on the active layer pattern 4, a passivation layer 6 formed on the active layer pattern 4 and the source drain electrode pattern 5, formed on The heat insulation layer 7 on the passivation layer 6, the resin layer 8 formed on the heat insulation layer 7, the pixel definition layer pattern 9 formed on the resin layer 8, the bottom electrode pattern 10, the light emitting Layer pattern 11, top electrode pattern 12, heat conduction layer 13 formed on the pixel defining layer pattern 9 and top electrode pattern 12, encapsulation layer 14 formed on the heat conduction layer 13, encapsulation layer 14 formed on the encapsulation layer 14 on the cover glass 15 and the heat dissipation layer 16 formed on the cover glass 15 . Wherein, the active layer pattern 4 can be formed of semiconductor materials such as metal oxide, polysilicon, and amorphous silicon; passivation layer via holes, heat insulation The positions of the layer vias and the resin layer vias, the passivation layer vias, the heat insulation layer vias and the resin layer vias correspond, and the top electrode pattern 12 is connected to the source-drain electrode pattern 5 through the above-mentioned via holes corresponding to the positions. Here, the gate electrode pattern 2, the gate insulating layer 3, the active layer pattern 4, and the source-drain electrode pattern 5 together form a transistor array, and the bottom electrode pattern 10, the light-emitting layer pattern 11, and the top electrode pattern 12 together form an organic light-emitting element array. The substrate glass 1 is a case of the substrate. In addition, the substrate can also be a substrate formed of transparent resin, quartz, sapphire and other materials, which is not limited in the present invention.
本发明实施例中，由于在钝化层6和底电极图形10之间形成有隔热层7，能够有效的避免有机发光元件在发光时所产生的热量影响晶体管阵列的性能避免了由此引起的显示亮度不均匀的问题同时本发明实施例中，由于在顶电极图形12之上还形成有导热层13，能够有效将有机发光元件在发光时所产生的热量向晶体管阵列的相反方向传导，能够进一步降低有机发光元件所产生的热量对有源层性能的影响。另一方面，本发明实施例中，在盖板玻璃15的外侧还形成有散热层16，这样也能够进一步加快有机发光元件所产生的热量向显示器外部扩散。In the embodiment of the present invention, since the heat insulating layer 7 is formed between the passivation layer 6 and the bottom electrode pattern 10, it can effectively prevent the heat generated by the organic light-emitting element from affecting the performance of the transistor array and avoid the resulting At the same time, in the embodiment of the present invention, since the heat conduction layer 13 is formed on the top electrode pattern 12, the heat generated by the organic light emitting element when emitting light can be effectively conducted to the opposite direction of the transistor array, The influence of the heat generated by the organic light-emitting element on the performance of the active layer can be further reduced. On the other hand, in the embodiment of the present invention, a heat dissipation layer 16 is formed on the outside of the cover glass 15 , so that the heat generated by the organic light-emitting element can be further accelerated to dissipate to the outside of the display.
需要指出的是，虽然图1中示出的是隔热层7形成在钝化层6和树脂层8之间的情况，但是在实际应用中，隔热层7的位置并不限于此，比如也可以将隔热层设置在树脂层8和底电极图形10之间，或者也可以使用具有隔热功能的材料形成钝化层6或树脂层8，只要将该隔热层设置在晶体管阵列和有机发光元件阵列之间，其对应的方案均能够达到降低有机发光元件所产生的热量对有源层性能的影响的目的，相应的技术方案也应该落入本发明的保护范围。另外，钝化层、树脂层和像素界定层图形等结构，不限定必须存在，可以根据实际或设计需要来进行增减。在具体实施时，不设置图1中的导热层13和/或散热层16，而仅设置隔热层7，相应的技术方案也能在一定程度上降低有机发光元件所产生的热量对有源层性能的影响，相应的技术方案也应该落入本发明的保护范围。It should be pointed out that although Fig. 1 shows the situation where the heat insulating layer 7 is formed between the passivation layer 6 and the resin layer 8, in practical applications, the position of the heat insulating layer 7 is not limited to this, for example It is also possible to arrange the heat insulating layer between the resin layer 8 and the bottom electrode pattern 10, or to use a material with a heat insulating function to form the passivation layer 6 or the resin layer 8, as long as the heat insulating layer is arranged between the transistor array and the bottom electrode pattern 10. Among the organic light-emitting element arrays, the corresponding solutions can achieve the purpose of reducing the effect of the heat generated by the organic light-emitting element on the performance of the active layer, and the corresponding technical solutions should also fall into the protection scope of the present invention. In addition, structures such as the passivation layer, the resin layer, and the pattern of the pixel defining layer are not limited to exist, and can be increased or decreased according to actual or design requirements. In specific implementation, the heat conduction layer 13 and/or heat dissipation layer 16 in Fig. 1 is not provided, but only the heat insulation layer 7 is provided, and the corresponding technical solution can also reduce the heat generated by the organic light-emitting element to a certain extent. layer performance, the corresponding technical solutions should also fall within the protection scope of the present invention.
在实际应用中，这里的隔热层7可以是由一种或者多种导热率低的材料组成，比如选用隔热层的材料可以具有0至0.5W/mK的导热率，如聚苯乙烯(导热率0.08W/mK)，聚乙烯(导热率0.3W/mK)等。隔热层7厚度可以为1～2um。在具体实施时，这里的隔热层7可以通过涂覆、蒸镀等方式制作。In practical applications, the thermal insulation layer 7 here can be made of one or more materials with low thermal conductivity, such as the material of the thermal insulation layer can have a thermal conductivity of 0 to 0.5W/mK, such as polystyrene ( Thermal conductivity 0.08W/mK), polyethylene (thermal conductivity 0.3W/mK), etc. The heat insulation layer 7 may have a thickness of 1-2um. During specific implementation, the heat insulating layer 7 here can be made by coating, vapor deposition and other methods.
在具体实施时，为了避免底电极图形10的断裂，可以将隔热层过孔的坡度角设置为小于或等于60°。比如在WOLED+COA(WhiteOLED+Color filter On Array，白光OLED彩膜位于基板上)中，如果隔热层7设置在钝化层6和彩膜层之间，可以将隔热层过孔的坡度角设置为小于或等于60°，如果隔热层7设置在树脂层8之上，底电极图形10之间，可以将隔热层过孔的坡度角设置在40-60°之间。另外在PLED结构(P型LED)中，隔热层7可沉积在钝化层6与底电极图形10之间，其中过孔的坡度角为40-60°。During specific implementation, in order to avoid breakage of the bottom electrode pattern 10 , the slope angle of the via hole of the heat insulation layer can be set to be less than or equal to 60°. For example, in WOLED+COA (WhiteOLED+Color filter On Array, the white OLED color film is located on the substrate), if the heat insulation layer 7 is arranged between the passivation layer 6 and the color filter layer, the slope of the heat insulation layer via hole can be The angle is set to be less than or equal to 60°. If the heat insulation layer 7 is arranged on the resin layer 8 and between the bottom electrode patterns 10, the slope angle of the heat insulation layer via hole can be set between 40-60°. In addition, in the PLED structure (P-type LED), the thermal insulation layer 7 can be deposited between the passivation layer 6 and the bottom electrode pattern 10, wherein the slope angle of the via hole is 40-60°.
在上述的显示背板为底发射型显示背板时，可以设置隔热层7的光透过率大于等于95％，以保证显示背板的透过率。When the above-mentioned display backplane is a bottom emission display backplane, the light transmittance of the heat insulating layer 7 can be set to be greater than or equal to 95%, so as to ensure the transmittance of the display backplane.
导热层13的材料可以具有100W/mK至8000W/mK的导热率。比如可以是由一种或者多种热导率较高的材料组成，如银、铜、金、铝、金刚石、石墨、石墨烯、碳纳米管等。导热层13的厚度可以为1～100um。导热层13可以通过溅射、蒸镀、涂覆等方式将上述材料沉积在顶电极图形12的上方。The material of the heat conduction layer 13 may have a heat conductivity of 100W/mK to 8000W/mK. For example, it may be composed of one or more materials with high thermal conductivity, such as silver, copper, gold, aluminum, diamond, graphite, graphene, carbon nanotubes, and the like. The thickness of the heat conducting layer 13 may be 1-100 um. The thermal conduction layer 13 can deposit the above materials on top of the top electrode pattern 12 by means of sputtering, evaporation, coating and the like.
在实际应用中，散热层16的材料可以具有大于100W/mK导热率，比如可以为以下材料中的一种或者几种：银、铜、金、铝、金刚石、石墨、石墨烯、碳纳米管等。In practical applications, the material of the heat dissipation layer 16 can have a thermal conductivity greater than 100W/mK, such as one or more of the following materials: silver, copper, gold, aluminum, diamond, graphite, graphene, carbon nanotubes wait.
如图2所示，散热层16具有散热片16a和散热销16b，所述散热销15b形成在所述散热片16a远离所述盖板玻璃14的一侧。这种结构具有较好的散热效果。As shown in FIG. 2 , the heat dissipation layer 16 has heat dissipation fins 16 a and heat dissipation pins 16 b, and the heat dissipation pins 15 b are formed on the side of the heat dissipation fins 16 a away from the cover glass 14 . This structure has better heat dissipation effect.
在具体实施时，这里的散热销具有至少1mm的高度，宽度可以在1-5mm范围内，相邻散热销16b之间的距离可以在2-5mm范围内。In a specific implementation, the heat dissipation pins here have a height of at least 1mm, a width of 1-5mm, and a distance between adjacent heat dissipation pins 16b of 2-5mm.
在具体实施时，可以选用导热率大于100W/mK的材料作为组成散热层的材料，如银、铜、金、铝、金刚石、石墨、石墨烯、碳纳米管等中的一种或者几种。散热销16b可以具有不同的形状，并具有较大的表面积可以更快地散发热量。散热销16b可以通过刻蚀工艺制作。In practice, materials with a thermal conductivity greater than 100 W/mK can be selected as the material for the heat dissipation layer, such as one or more of silver, copper, gold, aluminum, diamond, graphite, graphene, and carbon nanotubes. The cooling pins 16b can have different shapes and have a larger surface area to dissipate heat faster. The heat dissipating pin 16b can be fabricated by an etching process.
在具体实施时，上述的显示背板可以为底发射型显示背板，也可以为顶发射型显示背板，图1中示出的是为底发射型显示背板的一种情况，这里的底电极图形10可以为阳极，相应的顶电极图形12为阴极；或者底电极图形10为阴极，相应的顶电极图形12为阳极。另外，上述的显示背板可以为如上述所述的WOLED背板、PLED背板等。In specific implementation, the above-mentioned display backplane may be a bottom-emission display backplane, or a top-emission display backplane. Figure 1 shows a case of a bottom-emission display backplane, where The bottom electrode pattern 10 can be an anode, and the corresponding top electrode pattern 12 can be a cathode; or the bottom electrode pattern 10 can be a cathode, and the corresponding top electrode pattern 12 can be an anode. In addition, the above-mentioned display backplane may be the above-mentioned WOLED backplane, PLED backplane and the like.
在具体实施时，上述的隔热层过孔、钝化层过孔和树脂层过孔可以通过光刻的方式进行制作，进一步的，可以设置隔热层过孔的孔径大于钝化层过孔，树脂层过孔的孔径大于隔热层过孔。In specific implementation, the above-mentioned thermal insulation layer via hole, passivation layer via hole and resin layer via hole can be made by photolithography, and further, the aperture of the thermal insulation layer via hole can be set to be larger than the passivation layer via hole , the aperture of the via hole in the resin layer is larger than the via hole in the thermal insulation layer.
在一些应用中，上述的树脂层8并不是必须设置的结构。In some applications, the above-mentioned resin layer 8 is not a necessary structure.
本发明的另一实施例还提供了一种制作显示背板的方法，该方法可用于制作上述任一所述的显示背板，该方法可以包括：在基底上形成有机发光元件阵列和用于对所述有机发光元件阵列进行驱动控制的晶体管阵列，以及在所述有机发光元件阵列和所述氧化物晶体管阵列之间的隔热层，所述隔热层上形成有隔热层过孔，所述氧化物晶体管阵列通过所述隔热层过孔与所述有机发光元件阵列连接。Another embodiment of the present invention also provides a method for manufacturing a display backplane, which can be used to fabricate any of the above-mentioned display backplanes, and the method may include: forming an array of organic light-emitting elements on a substrate and using a transistor array for driving and controlling the organic light emitting element array, and a heat insulating layer between the organic light emitting element array and the oxide transistor array, and a heat insulating layer via hole is formed on the heat insulating layer, The oxide transistor array is connected to the organic light-emitting element array through the heat insulating layer via hole.
在具体实施时，可以参照现有技术中的方式形成氧化物晶体管阵列和有机发光元件阵列，并在形成氧化物晶体管阵列和有机发光元件阵列之间形成隔热层图形。具体的，可以依次在基底上形成栅电极图形、栅极绝缘层、氧化物有源层图形、源漏电极图形、钝化层，之后在钝化层之上形成隔热层图形，在形成隔热层图形之后依次形成树脂层、底电极图形、发光层、顶电极图形。如果所制作的显示背板为顶发射型显示背板，则在制作栅电极图形之前，还应该形成反射层。In specific implementation, the oxide transistor array and the organic light emitting element array can be formed by referring to the methods in the prior art, and a heat insulating layer pattern is formed between the oxide transistor array and the organic light emitting element array. Specifically, a gate electrode pattern, a gate insulating layer, an oxide active layer pattern, a source-drain electrode pattern, and a passivation layer can be sequentially formed on the substrate, and then a heat insulating layer pattern is formed on the passivation layer. After the thermal layer pattern, a resin layer, a bottom electrode pattern, a light-emitting layer, and a top electrode pattern are sequentially formed. If the fabricated display backplane is a top-emission display backplane, a reflective layer should also be formed before making the grid electrode pattern.
在具体实施时，当隔热层图形直接形成在钝化层上时，制作隔热层图形和钝化层图形的步骤可以为：In specific implementation, when the heat-insulation layer pattern is directly formed on the passivation layer, the steps of making the heat-insulation layer pattern and the passivation layer pattern can be:
形成钝化层；form a passivation layer;
将隔热材料与光刻胶进行按照一定的比例混合后涂覆在钝化层上；Mix the heat insulating material and the photoresist according to a certain ratio and then coat it on the passivation layer;
采用光刻工艺，使用同一掩膜板对涂覆在钝化层上的混合材料层进行曝光和显影，形成隔热层过孔的图形，然后再通过干刻形成钝化层过孔。A photolithography process is used to expose and develop the mixed material layer coated on the passivation layer by using the same mask to form a pattern of via holes in the heat insulating layer, and then to form via holes in the passivation layer by dry etching.
采用上述的方式可以使所形成的隔热层过孔可以具有较小的坡度角，避免底电极图形的断裂。By adopting the above method, the via hole of the heat insulation layer formed can have a smaller slope angle, so as to avoid the breakage of the bottom electrode pattern.
进一步的，上述的方法还可以包括：在所述有机发光元件阵列远离所述氧化物晶体管阵列的一侧形成导热层；这里的导热层可以通过溅射、蒸镀、涂覆等方式将上述材料沉积在顶电极图形表面。Further, the above method may also include: forming a heat conduction layer on the side of the organic light emitting element array away from the oxide transistor array; the heat conduction layer here may be sputtered, evaporated, coated, etc. deposited on the surface of the top electrode pattern.
进一步的，上述的方法还可以包括：形成用于对形成了所述有机发光元件阵列和氧化物晶体管阵列的基底进行封装的封装层；Further, the above method may further include: forming an encapsulation layer for encapsulating the substrate on which the organic light-emitting element array and the oxide transistor array are formed;
此时，所述在所述有机发光元件阵列远离所述氧化物晶体管阵列的一侧形成导热层包括：In this case, forming the heat conduction layer on the side of the organic light emitting element array away from the oxide transistor array includes:
在所述有机发光元件阵列和所述封装层之间形成导热层。A heat conduction layer is formed between the organic light emitting element array and the encapsulation layer.
进一步的，所述方法还可以包括：在所述封装层远离所述有机发光元件阵列一侧形成盖板和散热层，所述盖板形成在所述散热层和所述封装层之间。Further, the method may further include: forming a cover plate and a heat dissipation layer on a side of the encapsulation layer away from the array of organic light emitting elements, the cover plate being formed between the heat dissipation layer and the encapsulation layer.
在具体实施时，可以使用导热材料形成这里的散热层，这里所形成的散热层的结构可以与上述图2中所示的结构一致。此时，可以通过刻蚀工艺制作其中的散热销，并通过控制刻蚀时间来控制散热销的高度。In a specific implementation, the heat dissipation layer here may be formed using a heat conducting material, and the structure of the heat dissipation layer formed here may be consistent with the structure shown in FIG. 2 above. At this time, the heat dissipation pins can be fabricated through an etching process, and the height of the heat dissipation pins can be controlled by controlling the etching time.
需要指出的是，虽然上述实施例中，是以显示背板中的晶体管为氧化物晶体管进行的说明，但是在实际应用中，本发明提供的方案应用于包含其他类型晶体管的显示背板中也能达到相似的效果。相应的技术方案也应该落入本发明的保护范围。It should be pointed out that although in the above embodiments, the transistors in the display backplane are described as oxide transistors, in practical applications, the solution provided by the present invention is also applicable to display backplanes containing other types of transistors. can achieve similar effects. Corresponding technical solutions should also fall within the protection scope of the present invention.
本发明的又一实施例还提供了一种显示装置，包括上述任一种显示背板。所述显示装置可以为：OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。Another embodiment of the present invention also provides a display device, including any one of the above display backplanes. The display device may be any product or component with a display function such as an OLED panel, a mobile phone, a tablet computer, a television set, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
以上所述，仅为本发明的具体实施方式，但是，本发明的保护范围不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替代，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto, any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention, All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
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| CN201510111902.7ACN104659038A (en) | 2015-03-13 | 2015-03-13 | Display backboard, method for manufacturing the display backboard, and display device |
| EP15831207.4AEP3270415B1 (en) | 2015-03-13 | 2015-08-13 | Display backplate and manufacturing method therefor, and display device |
| PCT/CN2015/086869WO2016145777A1 (en) | 2015-03-13 | 2015-08-13 | Display backplate and manufacturing method therefor, and display device |
| US14/906,500US9991475B2 (en) | 2015-03-13 | 2015-08-13 | Display backplane, manufacturing method thereof and display device |
| Application Number | Priority Date | Filing Date | Title |
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| CN201510111902.7ACN104659038A (en) | 2015-03-13 | 2015-03-13 | Display backboard, method for manufacturing the display backboard, and display device |
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| CN104659038Atrue CN104659038A (en) | 2015-05-27 |
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| CN201510111902.7APendingCN104659038A (en) | 2015-03-13 | 2015-03-13 | Display backboard, method for manufacturing the display backboard, and display device |
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| C06 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | Application publication date:20150527 | |
| RJ01 | Rejection of invention patent application after publication |