请参阅图1所示，其为美国公告第US07554126号专利，其为一覆晶式发光二极管，其主要是包含一N型半导体层1与一P型半导体层2所构成的P-N接面，该N型半导体层1与该P型半导体层2分别通过一N极电极3与一P极电极4各连接一焊垫5(solder)，且该N极电极3与该P极电极4分别通过一绝缘层6(insulation)的隔离而分开。该焊垫5为供与电路板7的固定电极8电性连接，以提供该覆晶式发光二极管所需的电压。Please refer to Fig. 1, which is the United States Publication No. US07554126 patent, which is a flip-chip light-emitting diode, which mainly includes a P-N junction formed by an N-type semiconductor layer 1 and a P-type semiconductor layer 2. The N-type semiconductor layer 1 and the P-type semiconductor layer 2 are respectively connected to a soldering pad 5 (solder) through an N-pole electrode 3 and a P-pole electrode 4, and the N-pole electrode 3 and the P-pole electrode 4 are respectively connected through a P-pole electrode 4. The isolation of the insulating layer 6 (insulation) is separated. The welding pad 5 is electrically connected to the fixed electrode 8 of the circuit board 7 to provide the voltage required by the flip-chip LED.

如上所述的结构，其让N极电极3与P极电极4设置于覆晶式发光二极管的同一面，因而可以解决金属遮蔽所造成的光耗损，有效提高光取出率，而增加发光效能。The above-mentioned structure allows the N-electrode 3 and the P-electrode 4 to be disposed on the same surface of the flip-chip LED, thereby solving the light loss caused by metal shielding, effectively improving the light extraction rate, and increasing the luminous efficiency.

又，为了提高发光二极管的发光亮度，并降低能源耗损，现有已有提高驱动电压以降低电流量的作法，而为了提高驱动电压，现有有让多个已封装的发光二极管，以正负极连接的方式，串连在一起，其可形成一可承受高压的电路结构，因此其可以高压驱动而降低电流量，然而此种方式，其相当耗用空间而体积庞大，且易受外部静电场的干扰，而有发光不稳定的问题。In addition, in order to increase the luminous brightness of light-emitting diodes and reduce energy consumption, there is an existing method of increasing the driving voltage to reduce the amount of current. The pole connection method, connected in series, can form a circuit structure that can withstand high voltage, so it can be driven by high voltage to reduce the current flow. However, this method consumes a lot of space and is bulky, and is susceptible to external static electricity. Field interference, but there is a problem of luminous instability.

而另一方式，为于制做发光二极管半导体堆叠层时，让不同的发光二极管于晶圆（圆片）结构上直接串连在一起，之后再予以切割与封装，此种方式，其优点在于整合性高，可有效缩小体积，然而其半导体工序相当复杂，因而良率不好提升而垫高制作成本。Another way is to make different light-emitting diodes directly connected in series on the wafer (wafer) structure when making light-emitting diode semiconductor stacks, and then cut and package them. The advantage of this method is that It has high integration and can effectively reduce the volume. However, its semiconductor process is quite complicated, so the yield rate cannot be improved and the production cost is increased.

发明内容Contents of the invention

本发明的主要目的在于，揭露一种覆晶式发光二极管元件封装结构，其通过封装结构让多个发光二极管串连在一起，而满足承受高压的需求。The main purpose of the present invention is to disclose a package structure of a flip-chip light-emitting diode element, which allows a plurality of light-emitting diodes to be connected in series through the package structure, so as to meet the requirement of withstanding high voltage.

基于上述目地，本发明为一种覆晶式发光二极管元件封装结构，其包含一电路基板、一电性传导层与多个覆晶发光元件，其中该电路基板具有一承载面，该电性传导层形成于该承载面，且该电性传导层具有彼此独立的多个电连接区域，而该多个覆晶发光元件分别具有一P型电极与一N型电极，该多个覆晶发光元件藉由该多个电连接区域，电性连接该多个覆晶发光元件的P型电极与N型电极，并让该多个覆晶发光元件电性串连在一起。Based on the above purpose, the present invention is a package structure of flip-chip light-emitting diode elements, which includes a circuit substrate, an electrical conductive layer and a plurality of flip-chip light-emitting elements, wherein the circuit substrate has a bearing surface, and the electrically conductive A layer is formed on the carrying surface, and the electrically conductive layer has a plurality of electrical connection regions independent of each other, and the plurality of flip-chip light-emitting elements respectively have a P-type electrode and an N-type electrode, and the plurality of flip-chip light-emitting elements Through the plurality of electrical connection regions, the P-type electrodes and the N-type electrodes of the plurality of flip-chip light-emitting elements are electrically connected, and the plurality of flip-chip light-emitting elements are electrically connected in series.

据此，本发明为让该多个覆晶发光元件于封装时，藉由串连在一起的结构而形成一可承受高压的电路，故可以使用高压驱动而降低电流，故而可以增加发光亮度，并节省能耗，同时，其可有效利用空间，且不需改变半导体的前段工艺，因而兼具体积小、制造成本低廉的优点。Accordingly, the present invention forms a circuit that can withstand high voltage by connecting the plurality of flip-chip light-emitting elements in series during packaging, so that high-voltage driving can be used to reduce the current, so that the luminous brightness can be increased. It saves energy consumption, and at the same time, it can effectively use space without changing the front-end process of the semiconductor, so it has the advantages of small size and low manufacturing cost.

以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

附图说明Description of drawings

图1，为现有覆晶式发光二极管结构图；FIG. 1 is a structure diagram of an existing flip-chip light-emitting diode;

图2，为本发明结构图；Fig. 2 is a structural diagram of the present invention;

图3，为本发明电极层俯视图。Fig. 3 is a top view of the electrode layer of the present invention.

具体实施方式Detailed ways

兹有关本发明的详细内容及技术说明，现以实施例来作进一步说明，但应了解的是，该些实施例仅为例示说明之用，而不应被解释为本发明实施的限制。The detailed content and technical description of the present invention are now further described with examples, but it should be understood that these examples are for illustrative purposes only, and should not be construed as limitations on the implementation of the present invention.

请再参阅图2与图3所示，本发明为一种覆晶式发光二极管元件封装结构，其包含一电路基板10、一电性传导层20与多个覆晶发光元件30，其中该电路基板10具有一承载面11，该电性传导层20形成于该承载面11，且该电性传导层20具有彼此独立的多个电连接区域21。更详细的说，该多个电连接区域21彼此间为电性独立，为供电性连接该多个覆晶发光元件30使用。Please refer to FIG. 2 and FIG. 3 again, the present invention is a flip-chip light-emitting diode element packaging structure, which includes a circuit substrate 10, an electrical conductive layer 20 and a plurality of flip-chip light-emitting elements 30, wherein the circuit The substrate 10 has a bearing surface 11 , the electrical conduction layer 20 is formed on the bearing surface 11 , and the electrical conduction layer 20 has a plurality of independent electrical connection regions 21 . More specifically, the plurality of electrical connection regions 21 are electrically independent from each other, and are used for connecting the plurality of flip-chip light-emitting devices 30 for power supply.

该多个覆晶发光元件30为分别具有一P型电极31与一N型电极32，该多个覆晶发光元件30可以藉由该多个电连接区域21，电性连接该多个覆晶发光元件30的P型电极31与N型电极32，以让该多个覆晶发光元件30电性串连在一起。又该覆晶发光元件30的P型电极31与N型电极32，可以分设于该覆晶发光元件30的表面两侧，以有效利用空间，减少该多个电连接区域21的面积，以节省材料成本。The plurality of flip-chip light-emitting devices 30 have a P-type electrode 31 and an N-type electrode 32 respectively, and the plurality of flip-chip light-emitting devices 30 can be electrically connected to the plurality of flip-chip light-emitting devices 30 through the plurality of electrical connection regions 21 The P-type electrode 31 and the N-type electrode 32 of the light emitting device 30 are used to electrically connect the plurality of flip chip light emitting devices 30 together in series. In addition, the P-type electrode 31 and the N-type electrode 32 of the flip-chip light-emitting element 30 can be separately arranged on both sides of the surface of the flip-chip light-emitting element 30 to effectively use the space and reduce the area of the plurality of electrical connection regions 21 to save Material costs.

并该多个覆晶发光元件30的P型电极31与N型电极32为分藉由一锡球40，固定且电性连接所对应的该多个电连接区域21，且该锡球40的高度为依据实际需要而改变的，如图所示，本发明连结该P型电极31的锡球40，其高度为大于连结该N型电极32的锡球40。并在实施上，该多个覆晶发光元件30可以为矩阵排列于该电路基板10的承载面11上，以有效利用该电路基板10的空间。And the P-type electrodes 31 and N-type electrodes 32 of the plurality of flip-chip light-emitting devices 30 are divided by a solder ball 40, fixed and electrically connected to the corresponding plurality of electrical connection regions 21, and the solder ball 40 The height can be changed according to actual needs. As shown in the figure, the height of the solder ball 40 connected to the P-type electrode 31 in the present invention is greater than that of the solder ball 40 connected to the N-type electrode 32 . And in practice, the plurality of flip-chip light-emitting devices 30 can be arranged in a matrix on the carrying surface 11 of the circuit substrate 10 to effectively utilize the space of the circuit substrate 10 .

另外，形成电性串连的该多个覆晶发光元件30的最前端与最后端所连结的该电连接区域21，可以分别通过一打线50与一外部电源(图未示)连接，该打线50为进行封装后仅剩的外露元件，为供与该外部电源连接，以提供该多个覆晶发光元件30所需的驱动电压。In addition, the electrical connection area 21 where the front end and the rear end of the plurality of flip-chip light-emitting elements 30 that are electrically connected in series are connected can be connected to an external power source (not shown) through a bonding wire 50 respectively. The bonding wire 50 is the only exposed component left after packaging, and is used to connect with the external power supply to provide the driving voltage required by the plurality of flip-chip light-emitting components 30 .

如上所述，本发明为让该多个覆晶发光元件于封装时，藉由串连在一起的结构而形成一可承受高压的电路，故该外部电源可以提供高电压来驱动串连在一起的该多个覆晶发光元件，在功率不变的前提下，高电压代表低电流，因而可有效降低电流，其可以增加发光亮度，减少能量耗损；又本发明的结构可以让该多个覆晶发光元件紧密排列，因而可有效利用空间，且本发明的多个覆晶发光元件可以直接采用一般规格产品，亦即不需改变半导体的前段工艺，有效降低成本，因而本发明兼具体积小、制造成本低廉的优点。As mentioned above, the present invention allows the plurality of flip-chip light-emitting elements to be connected in series to form a circuit that can withstand high voltage during packaging, so the external power supply can provide high voltage to drive the series connection. For the plurality of flip-chip light-emitting elements, under the premise of constant power, high voltage represents low current, so the current can be effectively reduced, which can increase luminous brightness and reduce energy consumption; and the structure of the present invention can make the multiple flip-chip light-emitting elements The crystal light-emitting elements are closely arranged, so that the space can be effectively used, and the multiple flip-chip light-emitting elements of the present invention can directly adopt products of general specifications, that is, there is no need to change the front-end process of the semiconductor, and the cost is effectively reduced. Therefore, the present invention has a small size , The advantage of low manufacturing cost.

当然，本发明还可有其他多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Of course, the present invention can also have other various embodiments, and those skilled in the art can make various corresponding changes and deformations according to the present invention without departing from the spirit and essence of the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.

Claims

Translated fromChinese

1.一种覆晶式发光二极管元件封装结构，其特征在于，包含：1. A package structure of a flip-chip light-emitting diode element, characterized in that it comprises:

一电路基板，该电路基板具有一承载面；A circuit substrate, the circuit substrate has a bearing surface;

一电性传导层，该电性传导层形成于该承载面，且该电性传导层具有彼此独立的多个电连接区域；以及an electrical conduction layer, the electrical conduction layer is formed on the carrying surface, and the electrical conduction layer has a plurality of electrical connection regions independent of each other; and

多个覆晶发光元件，该多个覆晶发光元件分别具有一P型电极与一N型电极，该多个覆晶发光元件藉由该多个电连接区域，电性连接该多个覆晶发光元件的P型电极与N型电极，并让该多个覆晶发光元件电性串连在一起。A plurality of flip-chip light-emitting elements, the plurality of flip-chip light-emitting elements respectively have a P-type electrode and an N-type electrode, and the plurality of flip-chip light-emitting elements are electrically connected to the plurality of flip-chip light-emitting elements through the plurality of electrical connection regions The P-type electrode and the N-type electrode of the light-emitting element are electrically connected in series to the plurality of flip-chip light-emitting elements.

2.根据权利要求1所述的覆晶式发光二极管元件封装结构，其特征在于，该多个覆晶发光元件的P型电极与N型电极分藉由一锡球，固定且电性连接所对应的该多个电连接区域。2. The packaging structure of the flip-chip light-emitting diode device according to claim 1, wherein the P-type electrodes and the N-type electrodes of the plurality of flip-chip light-emitting devices are fixed and electrically connected by a solder ball. Corresponding to the plurality of electrical connection areas.

3.根据权利要求1所述的覆晶式发光二极管元件封装结构，其特征在于，该覆晶发光元件的P型电极与N型电极，分设于该覆晶发光元件的表面两侧。3 . The packaging structure of the flip chip light emitting diode device according to claim 1 , wherein the P-type electrode and the N type electrode of the flip chip light emitting device are respectively arranged on two sides of the surface of the flip chip light emitting device. 4 .

4.根据权利要求1所述的覆晶式发光二极管元件封装结构，其特征在于，该多个覆晶发光元件为矩阵排列于该电路基板的承载面上。4 . The packaging structure of the flip chip light emitting diode device according to claim 1 , wherein the plurality of flip chip light emitting devices are arranged in a matrix on the carrying surface of the circuit substrate.

5.根据权利要求1所述的覆晶式发光二极管元件封装结构，其特征在于，形成电性串连的该多个覆晶发光元件的最前端与最后端所连结的该电连接区域，分别通过一打线与一外部电源连接。5. The packaging structure of the flip-chip light-emitting diode device according to claim 1, wherein the electrical connection regions where the front end and the rear end of the plurality of flip-chip light-emitting devices that are electrically connected in series are connected are respectively Connect to an external power supply through a dozen wires.