技术领域technical field
本发明涉及显示技术领域，尤其涉及一种柔性阵列基板及其制备方法和显示装置。The invention relates to the field of display technology, in particular to a flexible array substrate, a preparation method thereof, and a display device.
背景技术Background technique
薄膜晶体管液晶显示装置（TFT-LCD，Thin Film Transistor Liquid CrystalDisplay），是有源矩阵类型液晶显示装置（AM-LCD，Active Matrix-LCD）中的一种。TFT-LCD一般包括背光源、上下偏光片、液晶盒、驱动与控制IC等部分，其中，核心部件是液晶盒。液晶盒采用阵列基板与彩膜基板对盒后灌入液晶（Liquid Crystal，LC），并通过隔垫物保持一定的盒厚，周边用封框胶密封形成，其中的像素电极和公共电极多采用透明导电材料氧化铟锡来制备，栅极线、数据线等导线采用钼、铝、铜等金属和合金制备。液晶盒的基本工作原理是利用薄膜晶体管（Thin Film Transistor，TFT）控制像素电极的电压，控制两块基板之间的液晶分子的排列状态，利用液晶材料的光电特性来产生灰阶，再配合彩膜的滤光特性，从而显示出丰富的各种色彩。Thin Film Transistor Liquid Crystal Display (TFT-LCD, Thin Film Transistor Liquid Crystal Display) is one of active matrix liquid crystal display devices (AM-LCD, Active Matrix-LCD). TFT-LCD generally includes backlight, upper and lower polarizers, liquid crystal box, drive and control IC and other parts, among which the core component is the liquid crystal box. The liquid crystal cell adopts the array substrate and the color film substrate, and then fills the liquid crystal (Liquid Crystal, LC), and maintains a certain thickness of the cell through a spacer, and seals the periphery with a sealant. The pixel electrodes and common electrodes are mostly used The transparent conductive material is made of indium tin oxide, and the wires such as gate lines and data lines are made of metals and alloys such as molybdenum, aluminum, and copper. The basic working principle of the liquid crystal cell is to use the thin film transistor (Thin Film Transistor, TFT) to control the voltage of the pixel electrode, to control the arrangement state of the liquid crystal molecules between the two substrates, to use the photoelectric characteristics of the liquid crystal material to generate gray scale, and to cooperate with the color The filter properties of the film show a rich variety of colors.
随着人们对显示技术需求的不断提高，未来的显示装置向柔性方向发展。但是，用于阵列基板制作的导电材料氧化铟锡为无机材料，质脆，弯曲角度有限，若作为柔性显示装置的导电材料，在弯曲时，容易产生裂缝和碎裂现象，导致电阻急剧增加甚至显示失效；柔性显示装置的基板多采用有机材料如塑料，而氧化铟锡与塑料基板的粘合性比与玻璃基板的粘合性差；另外，铟的价格持续上涨，使得氧化铟锡成为日益昂贵的材料。With the continuous improvement of people's demand for display technology, future display devices will develop in a flexible direction. However, the conductive material indium tin oxide used in the production of array substrates is an inorganic material, which is brittle and has a limited bending angle. If it is used as a conductive material for a flexible display device, it is prone to cracks and cracks when it is bent, resulting in a sharp increase in resistance or even Display failure; the substrates of flexible display devices are mostly made of organic materials such as plastics, and the adhesion of indium tin oxide to plastic substrates is worse than that of glass substrates; in addition, the price of indium continues to rise, making indium tin oxide an increasingly expensive s material.
发明内容Contents of the invention
有鉴于此，本发明的主要目的在于提供一种柔性阵列基板及其制备方法和显示装置，降低柔性阵列基板发生龟裂的可能，简化生产工艺，降低制造成本。In view of this, the main purpose of the present invention is to provide a flexible array substrate and its preparation method and a display device, which can reduce the possibility of cracks in the flexible array substrate, simplify the production process, and reduce the manufacturing cost.
为达到上述目的，本发明的技术方案是这样实现的：In order to achieve the above object, technical solution of the present invention is achieved in that way:
一种柔性阵列基板的制备方法，所述制备方法包括：A method for preparing a flexible array substrate, the method comprising:
形成第一石墨烯层，通过构图工艺形成包括栅极、栅线的第一石墨烯层的图案；Forming the first graphene layer, forming the pattern of the first graphene layer including the gate and the gate line through a patterning process;
形成第二石墨烯层，通过涂覆光刻胶、曝光和显影露出用于形成有源层的第二石墨烯层的有源区，对所述有源区进行氢化处理，形成由氢化石墨烯构成的有源层；通过构图工艺在所述有源层之外形成包括源极、漏极、数据线的第二石墨烯层的图案，所述有源层与所述源极、所述漏极相连接。Form the second graphene layer, expose the active region used to form the second graphene layer of the active layer by coating photoresist, exposure and development, carry out hydrogenation treatment to the active region, form hydrogenated graphene The active layer formed; the pattern of the second graphene layer comprising source, drain, and data lines is formed outside the active layer by a patterning process, and the active layer is connected with the source, the drain poles are connected.
上述技术方案中，所述制备方法还包括：In the above technical scheme, the preparation method also includes:
形成氧化石墨烯层，所述氧化石墨烯层为设置在第一石墨烯层和第二石墨烯层之间的绝缘层。A graphene oxide layer is formed, and the graphene oxide layer is an insulating layer disposed between the first graphene layer and the second graphene layer.
上述技术方案中，所述制备方法还包括：In the above technical scheme, the preparation method also includes:
形成所述第一石墨烯层的图案还包括形成公共电极和公共电极线；Forming the pattern of the first graphene layer also includes forming a common electrode and a common electrode line;
形成所述第二石墨烯层的图案还包括形成像素电极，所述像素电极与所述漏极相连接。Forming the pattern of the second graphene layer further includes forming a pixel electrode, and the pixel electrode is connected to the drain.
或者，所述制备方法还包括：Alternatively, the preparation method also includes:
形成所述第二石墨烯层的图案还包括形成像素电极，所述像素电极与所述漏极相连接；Forming the pattern of the second graphene layer also includes forming a pixel electrode, and the pixel electrode is connected to the drain electrode;
形成覆盖第二石墨烯层的图案的保护层；forming a patterned protective layer covering the second graphene layer;
在所述保护层的上方形成第三石墨烯层，通过构图工艺形成包括公共电极、公共电极线的第三石墨烯层的图案。A third graphene layer is formed above the protection layer, and a pattern of the third graphene layer including common electrodes and common electrode lines is formed through a patterning process.
上述技术方案中，所述形成第一石墨烯层、第二石墨烯层和第三石墨烯层包括：采用化学气相沉积法或旋涂法，形成石墨烯层；所述形成氧化石墨烯层包括：旋涂或喷涂氧化石墨烯溶液，烘干处理；所述对所述第二石墨烯层的有源区进行氢化处理包括：利用氢气或氢气和氩气的混合气体对有源区进行氢化。In the above technical scheme, the forming of the first graphene layer, the second graphene layer and the third graphene layer comprises: forming a graphene layer by chemical vapor deposition or spin coating; the forming of the graphene oxide layer comprises : spin-coating or spraying graphene oxide solution, drying treatment; the hydrogenation treatment of the active area of the second graphene layer includes: hydrogenation of the active area with hydrogen or a mixed gas of hydrogen and argon.
本发明还提供了一种柔性阵列基板，包括：The present invention also provides a flexible array substrate, including:
包括栅极、栅线的第一石墨烯层的图案；The pattern of the first graphene layer including gate, gate line;
包括源极、漏极、数据线的第二石墨烯层的图案，以及同层设置的与所述源极、所述漏极相连接的有源层，其中，通过涂覆光刻胶、曝光和显影露出用于形成有源层的第二石墨烯层的有源区，所述有源层通过对所述第二石墨烯层的有源区进行氢化处理得到。The pattern of the second graphene layer comprising source, drain and data lines, and the active layer connected to the source and the drain arranged in the same layer, wherein, by coating photoresist, exposing and developing to expose the active region of the second graphene layer used to form the active layer, the active layer being obtained by hydrogenating the active region of the second graphene layer.
上述技术方案中，所述阵列基板还包括设置在所述第一石墨烯层和第二石墨烯层之间的绝缘层。In the above technical solution, the array substrate further includes an insulating layer disposed between the first graphene layer and the second graphene layer.
上述技术方案中，所述绝缘的材质为氧化石墨烯。In the above technical solution, the insulating material is graphene oxide.
上述技术方案中：Among the above technical solutions:
所述第一石墨烯层的图案还包括公共电极和公共电极线；The pattern of the first graphene layer also includes common electrodes and common electrode lines;
所述第二石墨烯层的图案还包括像素电极，所述像素电极与所述漏极相连接。The pattern of the second graphene layer further includes a pixel electrode connected to the drain.
或者，or,
所述第二石墨烯层的图案还包括像素电极，所述像素电极与所述漏极相连接；The pattern of the second graphene layer also includes a pixel electrode connected to the drain electrode;
所述第二石墨烯层的上方设置有保护层；A protective layer is provided above the second graphene layer;
所述保护层的上方设置有第三石墨烯层，第三石墨烯层的图案包括公共电极、公共电极线。A third graphene layer is disposed above the protective layer, and the pattern of the third graphene layer includes common electrodes and common electrode lines.
本发明还提供了一种显示装置，所述显示装置包括所述阵列基板。The present invention also provides a display device, which includes the array substrate.
上述技术方案中，所述显示装置包括与所述阵列基板相对设置的彩膜基板，所述彩膜基板上不设置黑矩阵。In the above technical solution, the display device includes a color filter substrate disposed opposite to the array substrate, and no black matrix is arranged on the color filter substrate.
本发明提供的柔性阵列基板的制备方法，阵列基板的栅极、栅线、绝缘层、有源层、源极、漏极、像素电极、公共电极、数据线均采用石墨烯类材料构成。In the preparation method of the flexible array substrate provided by the present invention, the gate electrode, gate line, insulating layer, active layer, source electrode, drain electrode, pixel electrode, common electrode, and data line of the array substrate are all made of graphene materials.
柔性阵列基板上的所有组成部分均基于石墨烯类材料，大幅降低了柔性阵列基板发生龟裂的可能，减少了柔性阵列基板制备时所需的设备数量和种类，简化了生产工艺，大幅降低了阵列基板的制造成本；同时减薄了阵列基板成品的厚度，从而顺应了柔性阵列基板的发展需求。而且，由于石墨烯的导热系数高达5300W/m·K，可实现快速散热，适用于阵列基板栅极驱动（Gate driver on array，GOA）功能单元的制备。All components on the flexible array substrate are based on graphene-based materials, which greatly reduces the possibility of cracks in the flexible array substrate, reduces the number and types of equipment required for the preparation of the flexible array substrate, simplifies the production process, and greatly reduces The manufacturing cost of the array substrate; at the same time, the thickness of the finished array substrate is reduced, thereby complying with the development requirements of the flexible array substrate. Moreover, since the thermal conductivity of graphene is as high as 5300W/m·K, it can realize rapid heat dissipation and is suitable for the preparation of gate driver on array (GOA) functional units on array substrates.
本发明的阵列基板的绝缘层使用氧化石墨烯代替常规材料例如有机树脂、氮化硅，由于石墨烯类材料几乎完全透明，例如厚度为0.34nm的单层石墨烯薄膜对光的吸收率仅为2.3%，因此利用该阵列基板所制备的显示装置，可省略黑矩阵，避免黑矩阵的局限，进一步提高显示装置的开口率。相对于采用黑矩阵的现有技术，由此制得的显示装置的开口率至少可提高15%。The insulating layer of the array substrate of the present invention uses graphene oxide to replace conventional materials such as organic resins and silicon nitride. Since graphene materials are almost completely transparent, for example, a single-layer graphene film with a thickness of 0.34nm has an absorptivity of only Therefore, the display device prepared by using the array substrate can omit the black matrix, avoid the limitation of the black matrix, and further increase the aperture ratio of the display device. Compared with the prior art using the black matrix, the aperture ratio of the display device thus prepared can be increased by at least 15%.
附图说明Description of drawings
图1为本发明实施例1的柔性阵列基板制备方法流程图；FIG. 1 is a flowchart of a method for preparing a flexible array substrate according to Embodiment 1 of the present invention;
图2～7分别为图1中步骤101～106的示意图；Figures 2 to 7 are schematic diagrams of steps 101 to 106 in Figure 1, respectively;
图8为本发明实施例2的柔性阵列基板制备方法流程图；FIG. 8 is a flowchart of a method for preparing a flexible array substrate according to Embodiment 2 of the present invention;
图9～16为图8中步骤201～208的示意图。9-16 are schematic diagrams of steps 201-208 in FIG. 8 .
附图标记说明：Explanation of reference signs:
1--柔性基板；2--第一石墨烯层；3--栅极；4--公共电极；5--绝缘层；6--第二石墨烯层；7--有源层；8--源极；9--漏极；10--像素电极；11--保护层。1--flexible substrate; 2--first graphene layer; 3--gate; 4--common electrode; 5--insulating layer; 6--second graphene layer; 7--active layer; 8 --source; 9--drain; 10--pixel electrode; 11--protective layer.
具体实施方式Detailed ways
下面对本发明做进一步说明。The present invention will be further described below.
石墨烯是目前世上最薄却也是最坚硬的纳米材料，几乎完全透明，例如厚度为0.34nm的单层石墨烯薄膜只吸收2.3%的光。其导热系数高达5300W/m·K，高于碳纳米管和金刚石；且常温下其电子迁移率超过15000cm2/（V·s），比纳米碳管或晶体硅高；而电阻率只有约6～10Ω·cm，比铜或银更低，为目前世上电阻率最小的材料。同时，碳源来源广泛，正成为现今铟、锡等稀缺矿产资源的替代品。因此，石墨烯作为一种透明、柔性的导体，被用来代替氧化铟锡材料，用于制备柔性显示装置。Graphene is the thinnest but also the hardest nanomaterial in the world. It is almost completely transparent. For example, a single-layer graphene film with a thickness of 0.34nm only absorbs 2.3% of light. Its thermal conductivity is as high as 5300W/m·K, which is higher than that of carbon nanotubes and diamonds; and its electron mobility exceeds 15000cm2 /(V·s) at room temperature, which is higher than that of carbon nanotubes or crystalline silicon; and its resistivity is only about 6 ~10Ω·cm, which is lower than copper or silver, and is the material with the lowest resistivity in the world. At the same time, carbon sources come from a wide range of sources and are becoming substitutes for scarce mineral resources such as indium and tin. Therefore, graphene, as a transparent and flexible conductor, is used to replace indium tin oxide materials for the preparation of flexible display devices.
鉴于此，本发明提供了一种柔性阵列基板的制备方法，包括：In view of this, the present invention provides a method for preparing a flexible array substrate, comprising:
形成第一石墨烯层，通过构图工艺形成包括栅极、栅线的第一石墨烯层的图案；Forming the first graphene layer, forming the pattern of the first graphene layer including the gate and the gate line through a patterning process;
形成第二石墨烯层，通过涂覆光刻胶、曝光和显影露出用于形成有源层的第二石墨烯层的有源区，对所述有源区进行氢化处理，形成由氢化石墨烯构成的有源层；通过构图工艺在所述有源层之外形成包括源极、漏极、数据线的第二石墨烯层的图案，所述有源层与所述源极、所述漏极相连接。Form the second graphene layer, expose the active region used to form the second graphene layer of the active layer by coating photoresist, exposure and development, carry out hydrogenation treatment to the active region, form hydrogenated graphene The active layer formed; the pattern of the second graphene layer comprising source, drain, and data lines is formed outside the active layer by a patterning process, and the active layer is connected with the source, the drain poles are connected.
本发明所提供的柔性阵列基板的制备方法，对阵列基板的类型没有限制，可应用于底栅型薄膜晶体管阵列基板，也可应用于顶栅型薄膜晶体管阵列基板，也就是说，所述方案中的第一石墨烯层和第二石墨烯层在不同的阵列基板中应用时有不同的顺序，这里对此不做限定，仅是对两层石墨烯层进行区分。The method for preparing a flexible array substrate provided by the present invention has no limitation on the type of the array substrate, and can be applied to a bottom-gate thin film transistor array substrate, and can also be applied to a top-gate thin film transistor array substrate, that is to say, the scheme The first graphene layer and the second graphene layer have different orders when they are applied in different array substrates, and this is not limited here, only to distinguish the two graphene layers.
具体的，当上述制备方法应用于底栅型阵列基板时，包括栅极、栅线的第一石墨烯层可以直接覆盖于阵列基板的上方，包括有源层、源极、漏极、数据线的第二石墨烯层可以位于第一石墨烯层的上方；当上述制备方法应用于顶栅型阵列基板时，包括有源层、源极、漏极、数据线的第二石墨烯层可以直接覆盖于阵列基板的上方，包括栅极、栅线的第一石墨烯层可以位于第二石墨烯层的上方。Specifically, when the above preparation method is applied to a bottom-gate array substrate, the first graphene layer including gates and gate lines can be directly covered on the array substrate, including active layers, source electrodes, drain electrodes, and data lines. The second graphene layer can be located above the first graphene layer; when the above preparation method is applied to a top-gate array substrate, the second graphene layer including the active layer, source electrode, drain electrode, and data line can be directly Covering above the array substrate, the first graphene layer including gates and gate lines may be located above the second graphene layer.
上述制备方法中，第一石墨烯层的图案还可以包括周边区域的栅极引线、选通焊盘（gate pad）等。In the above preparation method, the pattern of the first graphene layer may further include gate leads, gate pads and the like in the peripheral area.
上述制备方法中，阵列基板的栅极、栅线、有源层、源极、漏极、数据线均采用石墨烯类材料构成，降低了柔性阵列基板发生龟裂的可能，减薄了阵列基板成品的厚度，从而顺应了柔性阵列基板的发展需求。而且，由于石墨烯的导热系数高达5300W/m·K，可实现快速散热，适用于阵列基板栅极驱动（Gate driver on array，GOA）功能单元的制备。In the above preparation method, the gate electrode, gate line, active layer, source electrode, drain electrode, and data line of the array substrate are all made of graphene-based materials, which reduces the possibility of cracks in the flexible array substrate and reduces the thickness of the array substrate. The thickness of the finished product complies with the development requirements of the flexible array substrate. Moreover, since the thermal conductivity of graphene is as high as 5300W/m·K, it can realize rapid heat dissipation and is suitable for the preparation of gate driver on array (GOA) functional units on array substrates.
进一步的，上述制备方法还包括：形成氧化石墨烯层，所述氧化石墨烯层为设置在第一石墨烯层和第二石墨烯层之间的绝缘层。Further, the above preparation method further includes: forming a graphene oxide layer, and the graphene oxide layer is an insulating layer arranged between the first graphene layer and the second graphene layer.
其中，这里的绝缘层采用氧化石墨烯材料，减少了阵列基板制备所需的材料种类，从而减少了柔性阵列基板制备时所需的设备数量和种类，简化了生产工艺，降低了阵列基板的制造成本。Among them, the insulating layer here is made of graphene oxide material, which reduces the types of materials required for the preparation of array substrates, thereby reducing the number and types of equipment required for the preparation of flexible array substrates, simplifying the production process, and reducing the manufacturing cost of array substrates. cost.
更进一步的，上述制备方法还包括：Furthermore, the above preparation method also includes:
形成所述第一石墨烯层的图案包括形成公共电极和公共电极线；Forming the pattern of the first graphene layer includes forming a common electrode and a common electrode line;
形成所述第二石墨烯层的图案包括形成像素电极，所述像素电极与所述漏极相连接。Forming the pattern of the second graphene layer includes forming a pixel electrode connected to the drain electrode.
或者，更进一步的，上述制备方法还包括：Or, further, the above preparation method also includes:
形成所述第二石墨烯层的图案包括形成像素电极，所述像素电极与所述漏极相连接；forming the pattern of the second graphene layer includes forming a pixel electrode connected to the drain;
形成覆盖第二石墨烯层的图案的保护层；forming a patterned protective layer covering the second graphene layer;
在所述保护层的上方形成第三石墨烯层，通过构图工艺形成包括公共电极、公共电极线的第三石墨烯层的图案。A third graphene layer is formed above the protection layer, and a pattern of the third graphene layer including common electrodes and common electrode lines is formed through a patterning process.
上述技术方案中，阵列基板的栅极、栅线、绝缘层、有源层、源极、漏极、像素电极、公共电极、数据线均采用石墨烯类材料构成，进一步减少了阵列基板制备所需的材料种类，从而进一步减少了柔性阵列基板制备时所需的设备数量和种类，简化了生产工艺，大幅降低了阵列基板的制造成本。In the above technical solution, the gate, gate line, insulating layer, active layer, source, drain, pixel electrode, common electrode, and data line of the array substrate are all made of graphene materials, which further reduces the cost of preparing the array substrate. The types of materials required, thereby further reducing the number and types of equipment required for the preparation of flexible array substrates, simplifying the production process, and greatly reducing the manufacturing cost of the array substrate.
其中，上述技术方案中：Among them, in the above-mentioned technical scheme:
所述形成第一石墨烯层、第二石墨烯层包括：采用化学气相沉积法或旋涂法，形成石墨烯层；The forming of the first graphene layer and the second graphene layer includes: forming a graphene layer by chemical vapor deposition or spin coating;
所述形成氧化石墨烯层包括：旋涂或喷涂氧化石墨烯溶液，烘干处理；The forming of the graphene oxide layer includes: spin coating or spraying graphene oxide solution, drying treatment;
所述对所述第二石墨烯层的有源区进行氢化处理包括：利用氢气或氢气和氩气的混合气体对有源区进行氢化；The hydrogenation treatment of the active region of the second graphene layer includes: hydrogenating the active region with hydrogen or a mixed gas of hydrogen and argon;
所述形成第三石墨烯层包括：采用化学气相沉积或旋涂法，形成石墨烯层。The forming the third graphene layer includes: forming the graphene layer by chemical vapor deposition or spin coating.
本发明还提供了一种柔性阵列基板，采用上述相应的制备方法，制备柔性阵列基板，并采用所述阵列基板制备显示装置。The present invention also provides a flexible array substrate. The flexible array substrate is prepared by using the corresponding preparation method above, and a display device is prepared by using the array substrate.
制备所述显示装置时，可以包括与所述阵列基板相对设置的彩膜基板。When preparing the display device, a color filter substrate disposed opposite to the array substrate may be included.
其中，可以采用常规的彩膜基板，也可以采用不设置黑矩阵的彩膜基板。其中，彩膜基板上可以不设置黑矩阵，是由于：当利用所述阵列基板制备显示装置时，由于阵列基板所有组成部分均采用石墨烯类材料，而石墨烯类材料的薄膜几乎是完全透明的，例如，厚度为0.34nm的单层石墨烯薄膜的透过率超过95%，吸收率为2.3%，反射率小于0.1%。因此，在利用上述阵列基板制备显示装置时，背光几乎不会发生反射，所以彩膜基板可以不需要黑矩阵部分。因此，在彩膜基板的生产过程中可以省略黑矩阵的工序，可利用不设有黑矩阵的彩膜基板与上述阵列基板制备显示装置，从而可避免黑矩阵的局限，进一步提高显示装置的开口率，相对于采用黑矩阵的现有技术，开口率至少可提高15%。Wherein, a conventional color filter substrate may be used, or a color filter substrate without a black matrix may be used. Among them, the black matrix may not be arranged on the color filter substrate, because: when using the array substrate to prepare a display device, since all components of the array substrate are made of graphene-based materials, and the thin film of graphene-based materials is almost completely transparent For example, a single-layer graphene film with a thickness of 0.34nm has a transmittance of more than 95%, an absorbance of 2.3%, and a reflectance of less than 0.1%. Therefore, when the above-mentioned array substrate is used to prepare a display device, the backlight will hardly be reflected, so the color filter substrate may not need a black matrix part. Therefore, in the production process of the color filter substrate, the process of black matrix can be omitted, and the display device can be prepared by using the color filter substrate without black matrix and the above-mentioned array substrate, thereby avoiding the limitation of the black matrix and further improving the opening of the display device. Compared with the existing technology using black matrix, the aperture ratio can be increased by at least 15%.
下面结合附图及实施例进一步对本发明作详细的说明。The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
本发明实施例中所采用的石墨烯可以从厂家（例如江南石墨烯研究院等）直接购买；所采用的氧化石墨烯可以自行制备，通过将石墨烯经过氧化剂（如KMnO4等）氧化、离心分离等步骤制备；所采用的氧化石墨烯也可以从厂家直接购买氧化石墨烯固体，将其分散到有机溶剂中制得有机可溶的氧化石墨烯溶液，有机溶剂可以为酮类、醚类、芳烃类溶剂，其中，酮类可以为丙酮，醚类可以为乙醚，芳烃类可以为甲苯。The graphene used in the embodiment of the present invention can be directly purchased from the manufacturer (such as Jiangnan Graphene Research Institute,etc. ); separation and other steps; the graphene oxide used can also directly purchase graphene oxide solid from the manufacturer, and disperse it in an organic solvent to obtain an organic soluble graphene oxide solution. The organic solvent can be ketones, ethers, Aromatic hydrocarbon solvents, wherein the ketones can be acetone, the ethers can be diethyl ether, and the aromatic hydrocarbons can be toluene.
本发明实施例以底栅型薄膜晶体管阵列基板为例，在实际应用中，本发明可应用于底栅型或顶栅型及其他类型的薄膜晶体管阵列基板，本实施例不构成对本发明的限制。The embodiment of the present invention takes a bottom-gate thin film transistor array substrate as an example. In practical applications, the present invention can be applied to bottom-gate or top-gate thin-film transistor array substrates and other types. This embodiment does not constitute a limitation to the present invention. .
本发明实施例中所述的构图工艺，包括如下步骤：在需要形成图案的层例如石墨烯层上，涂覆光刻胶，然后曝光、显影、蚀刻，形成所需要的图案。The patterning process described in the embodiment of the present invention includes the following steps: coating a photoresist on a layer to be patterned, such as a graphene layer, and then exposing, developing, and etching to form a required pattern.
实施例1Example 1
图1为实施例1的柔性阵列基板制备方法流程图，具体包括：Figure 1 is a flow chart of the method for preparing a flexible array substrate in Example 1, which specifically includes:
步骤101：在柔性基板上形成第一石墨烯层；Step 101: forming a first graphene layer on a flexible substrate;
步骤102：通过构图工艺形成包括栅线、栅极、公共电极和公共电极线的第一石墨烯层的图案；Step 102: forming a pattern of the first graphene layer including gate lines, gates, common electrodes and common electrode lines through a patterning process;
步骤103：在第一石墨烯层的上方形成氧化石墨烯层作为绝缘层；Step 103: forming a graphene oxide layer as an insulating layer above the first graphene layer;
步骤104：在绝缘层上方形成第二石墨烯层；Step 104: forming a second graphene layer above the insulating layer;
步骤105：通过涂覆光刻胶、曝光、显影，露出用于制备有源层的第二石墨烯层的有源区，对有源区进行氢化得到氢化石墨烯，形成由氢化石墨烯构成的有源层；Step 105: Exposing the active region of the second graphene layer used to prepare the active layer by coating photoresist, exposing and developing, and hydrogenating the active region to obtain hydrogenated graphene, forming a graphene composed of hydrogenated graphene active layer;
步骤106：通过构图工艺在有源层以外形成包括数据线、源极、漏极、像素电极的第二石墨烯层的图案，其中，有源层与源极、漏极相连接。Step 106: Form a pattern of the second graphene layer including data lines, source electrodes, drain electrodes, and pixel electrodes outside the active layer through a patterning process, wherein the active layer is connected to the source electrodes and the drain electrodes.
下面结合图2至图7对实施例1的具体步骤进行详细说明。The specific steps of Embodiment 1 will be described in detail below with reference to FIG. 2 to FIG. 7 .
图2为图1中步骤101示意图。如图2所示，在柔性基板上形成第一石墨烯层，首先在柔性基板1上利用化学气相沉积法（PECVD）或者旋涂法涂覆一层石墨烯材料，形成第一石墨烯层2。其中，石墨烯层的层厚为具体地，柔性基板1的材料可以为透明金属箔片、柔性玻璃、聚合物，聚合物例如聚酰亚胺、聚对苯二甲酸乙二醇酯。FIG. 2 is a schematic diagram of step 101 in FIG. 1 . As shown in Figure 2, the first graphene layer is formed on the flexible substrate. First, a layer of graphene material is coated on the flexible substrate 1 by chemical vapor deposition (PECVD) or spin coating to form the first graphene layer 2. . Among them, the layer thickness of the graphene layer is Specifically, the material of the flexible substrate 1 can be transparent metal foil, flexible glass, polymers such as polyimide, polyethylene terephthalate.
图3为图1中步骤102示意图。如图3所示，通过构图工艺形成由石墨烯材料构成的包括栅极3、栅线（图中未示出）和公共电极4、公共电极线（图中未示出）的第一石墨烯层的图案。FIG. 3 is a schematic diagram of step 102 in FIG. 1 . As shown in Figure 3, a first graphene consisting of a graphene material, including a gate 3, a grid line (not shown in the figure), a common electrode 4, and a common electrode line (not shown in the figure), is formed by a patterning process. layer pattern.
图4为图1中步骤103示意图。如图4所示，在第一石墨烯层的上方通过旋涂或喷涂氧化石墨烯溶液形成氧化石墨烯层，并进一步在20℃～80℃下烘干，形成绝缘层5。其中，氧化石墨烯层的层厚为FIG. 4 is a schematic diagram of step 103 in FIG. 1 . As shown in FIG. 4 , a graphene oxide layer is formed on top of the first graphene layer by spin coating or spraying a graphene oxide solution, and further dried at 20° C. to 80° C. to form an insulating layer 5 . Among them, the layer thickness of the graphene oxide layer is
Ito Jun等人的理论计算显示，石墨烯表面吸氧导致能带的增加，随着吸氧量从0增加到0.5ML(O/C=50%)，石墨烯从带隙为零的半金属转变为带隙为3.39eV的半导体，完全氧化后则变为绝缘体。氧化的石墨烯经还原后可以转变为导体，例如当氧化的石墨烯被还原到O/C=25%状态时就发生从绝缘体到导体的转变。对石墨烯进行不同程度的氧化，可以分别形成半导体和绝缘体，完全氧化的石墨烯为绝缘材料。Theoretical calculations by Ito Jun et al. show that oxygen absorption on the surface of graphene leads to an increase in the energy band. As the oxygen absorption increases from 0 to 0.5ML (O/C=50%), graphene changes from a semi-metal with a zero band gap. It transforms into a semiconductor with a band gap of 3.39eV, and becomes an insulator after complete oxidation. Oxidized graphene can be transformed into a conductor after reduction, for example, when the oxidized graphene is reduced to the state of O/C=25%, the transition from insulator to conductor occurs. Different degrees of oxidation of graphene can form semiconductors and insulators, and fully oxidized graphene is an insulating material.
图5为图1中步骤104示意图。如图5所示，在氧化石墨烯材质的绝缘层5的上方利用PECVD法或者旋涂法涂覆一层石墨烯材料，形成第二石墨烯层6。其中，石墨烯层的层厚为FIG. 5 is a schematic diagram of step 104 in FIG. 1 . As shown in FIG. 5 , a layer of graphene material is coated on top of the insulating layer 5 made of graphene oxide by PECVD or spin coating to form a second graphene layer 6 . Among them, the layer thickness of the graphene layer is
图6为图1中步骤105示意图。如图6所示，首先，通过涂覆光刻胶、曝光和显影，露出用于制备有源层的第二石墨烯层6的有源区；其次，对上述用于制备有源层的有源区进行氢化，由于此时第二石墨烯层上除有源区外的其他区域尚有涂覆的光刻胶，所以可仅对有源区进行氢化，而对其他区域没有影响。由此，形成由氢化石墨烯构成的有源层7。具体地，对用于制备有源层的有源区进行氢化，利用氢气或氢气和氩气的混合气体在0.05～0.5mbar的压力下对石墨烯层进行氢化3～5小时，其中，氢气和氩气的混合气体中氢气的体积比为5%～15%。其中，有源层7位于栅极3的上方，且有源层7的宽度小于栅极3的宽度。FIG. 6 is a schematic diagram of step 105 in FIG. 1 . As shown in Figure 6, at first, by coating photoresist, exposure and development, expose the active region that is used to prepare the second graphene layer 6 of active layer; The source area is hydrogenated. Since there is still coated photoresist on the second graphene layer except the active area at this time, only the active area can be hydrogenated without affecting other areas. Thus, active layer 7 made of hydrogenated graphene was formed. Specifically, the active region used to prepare the active layer is hydrogenated, and the graphene layer is hydrogenated for 3 to 5 hours at a pressure of 0.05 to 0.5 mbar by using hydrogen or a mixed gas of hydrogen and argon, wherein the hydrogen and The volume ratio of hydrogen in the mixed gas of argon is 5% to 15%. Wherein, the active layer 7 is located above the gate 3 , and the width of the active layer 7 is smaller than the width of the gate 3 .
图7为图1中步骤106示意图。如图7所示，通过构图工艺，在有源层以外形成包括数据线（图中未示出）、源极8、漏极9、像素电极10的第二石墨烯层6的图案。其中，源极8与漏极9分别与有源层7接触，且接触区域均位于栅极3的上方，源极8与漏极9之间为有源层7，像素电极10与漏极9接触。FIG. 7 is a schematic diagram of step 106 in FIG. 1 . As shown in FIG. 7 , a pattern of the second graphene layer 6 including data lines (not shown in the figure), source electrodes 8 , drain electrodes 9 , and pixel electrodes 10 is formed outside the active layer through a patterning process. Wherein, the source electrode 8 and the drain electrode 9 are respectively in contact with the active layer 7, and the contact area is located above the gate 3, the active layer 7 is between the source electrode 8 and the drain electrode 9, and the pixel electrode 10 and the drain electrode 9 touch.
通过上述方法可制得阵列基板。同时利用该基板可制备显示装置。An array substrate can be manufactured through the above method. At the same time, a display device can be prepared by utilizing the substrate.
制备上述显示装置时，可采用在阵列基板的对侧设置彩膜基板形成液晶盒的方式，其中，彩膜基板可采用常规的彩膜基板，也可以采用不设有黑矩阵的彩膜基板。When preparing the above-mentioned display device, a method of setting a color filter substrate on the opposite side of the array substrate to form a liquid crystal cell can be used, wherein the color filter substrate can be a conventional color filter substrate or a color filter substrate without a black matrix.
本实施例中采用不设置黑矩阵的彩膜基板，相对于采用黑矩阵的现有技术，开口率可提高15%。In this embodiment, a color filter substrate without a black matrix is used, and compared with the prior art using a black matrix, the aperture ratio can be increased by 15%.
实施例2Example 2
图8为实施例2的柔性阵列基板制备方法流程图，具体包括：Figure 8 is a flow chart of the method for preparing a flexible array substrate in Example 2, which specifically includes:
步骤201：在柔性基板上形成第一石墨烯层；Step 201: forming a first graphene layer on a flexible substrate;
步骤202：通过构图工艺形成包括栅线、栅极的第一石墨烯层的图案；Step 202: forming a pattern of the first graphene layer including gate lines and gates through a patterning process;
步骤203：在第一石墨烯层上方形成氧化石墨烯层作为绝缘层；Step 203: forming a graphene oxide layer as an insulating layer above the first graphene layer;
步骤204：在绝缘层上方形成第二石墨烯层；Step 204: forming a second graphene layer above the insulating layer;
步骤205：通过涂覆光刻胶、曝光和显影，露出用于制备有源层的第二石墨烯层的有源区，对有源区进行氢化得到氢化石墨烯，形成由氢化石墨烯构成的有源层；Step 205: Exposing the active area of the second graphene layer used to prepare the active layer by coating photoresist, exposing and developing, hydrogenating the active area to obtain hydrogenated graphene, forming a hydrogenated graphene active layer;
步骤206：通过构图工艺在有源层以外形成包括数据线、源极、漏极、像素电极的第二石墨烯层的图案；Step 206: forming a second graphene layer pattern including data lines, source electrodes, drain electrodes, and pixel electrodes outside the active layer through a patterning process;
步骤207：在第二石墨烯层上方形成保护层；Step 207: forming a protective layer on the second graphene layer;
步骤208：在保护层上形成第三石墨烯层，通过构图工艺形成包括公共电极和公共电极线的第三石墨烯层的图案。Step 208: forming a third graphene layer on the protection layer, and forming a pattern of the third graphene layer including common electrodes and common electrode lines through a patterning process.
下面结合图9至图16对实施例2的具体步骤进行详细说明。The specific steps of Embodiment 2 will be described in detail below with reference to FIG. 9 to FIG. 16 .
图9为图8中步骤201示意图。如图9所示，步骤201与实施例1中的步骤101相同。FIG. 9 is a schematic diagram of step 201 in FIG. 8 . As shown in FIG. 9 , step 201 is the same as step 101 in Embodiment 1.
图10为图8中步骤202示意图。如图10所示，通过构图工艺形成由石墨烯材料构成的包括栅极3、栅线（图中未示出）的第一石墨烯层的图案。FIG. 10 is a schematic diagram of step 202 in FIG. 8 . As shown in FIG. 10 , a pattern of the first graphene layer made of graphene material including gate 3 and gate lines (not shown in the figure) is formed through a patterning process.
图11至图14所示的为图8中步骤203～206示意图。如图11至图14所示，图8中步骤203～206与实施例1中的步骤103～106相同。11 to 14 are schematic diagrams of steps 203 to 206 in FIG. 8 . As shown in FIGS. 11 to 14 , steps 203 to 206 in FIG. 8 are the same as steps 103 to 106 in Embodiment 1.
图15为图8中步骤207示意图。如图15所示，在第二石墨烯层上方形成保护层11。保护层11的材料可以为二氧化硅或者有机树脂等。其中，保护层的层厚为FIG. 15 is a schematic diagram of step 207 in FIG. 8 . As shown in FIG. 15, a protective layer 11 is formed over the second graphene layer. The material of the protective layer 11 may be silicon dioxide or organic resin. Among them, the layer thickness of the protective layer is
图16为图8中步骤208示意图。如图16所示，首先在保护层11上利用PECVD法沉积或者旋涂法涂覆一层石墨烯材料，此为第三石墨烯层，其中，石墨烯层的层厚为通过构图工艺形成包括公共电极4和公共电极线（图中未示出）的第三石墨烯层的图案。FIG. 16 is a schematic diagram of step 208 in FIG. 8 . As shown in Figure 16, at first on protective layer 11, utilize PECVD method deposition or spin coating method to coat one deck graphene material, this is the 3rd graphene layer, wherein, the layer thickness of graphene layer is A pattern of the third graphene layer including the common electrode 4 and the common electrode lines (not shown in the figure) is formed through a patterning process.
通过上述方法制备阵列基板，同时利用该基板制备显示装置。这里，制备显示装置可与实施例1相同，采用常规的彩膜基板；也可采用不设有黑矩阵的彩膜基板，以进一步提高显示装置的开口率。An array substrate is prepared by the above method, and a display device is prepared using the substrate. Here, the preparation of the display device can be the same as that in Example 1, using a conventional color filter substrate; a color filter substrate without a black matrix can also be used to further increase the aperture ratio of the display device.
本实施例中采用不设置黑矩阵的彩膜基板，相对于采用黑矩阵的现有技术，开口率可提高15%。In this embodiment, a color filter substrate without a black matrix is used, and compared with the prior art using a black matrix, the aperture ratio can be increased by 15%.
以上所述，仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867970A (en)* | 2015-05-21 | 2015-08-26 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, display device and manufacturing method of the array substrate |
| US10146257B2 (en)* | 2015-10-02 | 2018-12-04 | Microsoft Technology Licensing, Llc | Foldable device having sensor |
| CN106935636A (en)* | 2015-12-31 | 2017-07-07 | 中芯国际集成电路制造(上海)有限公司 | Fin formula field effect transistor and forming method thereof |
| CN106941080B (en)* | 2016-01-04 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | Fin field effect transistor and method of forming the same |
| CN105785685B (en)* | 2016-05-11 | 2018-03-09 | 深圳市华星光电技术有限公司 | Display with double faces, display module and its tft array substrate |
| CN107170758B (en)* | 2017-05-25 | 2020-08-14 | 京东方科技集团股份有限公司 | Flexible display substrate, manufacturing method thereof and display device |
| CN107104078A (en)* | 2017-06-06 | 2017-08-29 | 深圳市华星光电技术有限公司 | Graphene electrodes and its patterning preparation method, array base palte |
| CN107946245A (en)* | 2017-11-22 | 2018-04-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of array base palte and preparation method thereof |
| CN107993981B (en)* | 2017-11-22 | 2020-11-06 | 深圳市华星光电半导体显示技术有限公司 | TFT substrate and manufacturing method thereof |
| CN108010879A (en)* | 2017-11-22 | 2018-05-08 | 深圳市华星光电半导体显示技术有限公司 | The production method and flexible array substrate of a kind of flexible array substrate |
| CN111490064B (en)* | 2020-04-11 | 2023-07-11 | 北京元芯碳基集成电路研究院 | Display panel and manufacturing method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629579A (en)* | 2011-09-29 | 2012-08-08 | 京东方科技集团股份有限公司 | Flexible TFT array substrate and manufacturing method thereof and display device |
| CN102709236A (en)* | 2011-12-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| CN103151460A (en)* | 2011-11-25 | 2013-06-12 | 索尼公司 | Transistor, display, and electronic apparatus |
| CN103325836A (en)* | 2013-06-08 | 2013-09-25 | 中国科学院微电子研究所 | Graphene field effect transistor and preparation method thereof |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101463064B1 (en)* | 2007-10-17 | 2014-11-19 | 삼성전자주식회사 | Method of forming nano dot, memory device comprising nano dot formed using the same and method of manufacturing the same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629579A (en)* | 2011-09-29 | 2012-08-08 | 京东方科技集团股份有限公司 | Flexible TFT array substrate and manufacturing method thereof and display device |
| CN103151460A (en)* | 2011-11-25 | 2013-06-12 | 索尼公司 | Transistor, display, and electronic apparatus |
| CN102709236A (en)* | 2011-12-15 | 2012-10-03 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| CN103325836A (en)* | 2013-06-08 | 2013-09-25 | 中国科学院微电子研究所 | Graphene field effect transistor and preparation method thereof |
| Publication number | Publication date |
|---|---|
| CN104576525A (en) | 2015-04-29 |
| Publication | Publication Date | Title |
|---|---|---|
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