Movatterモバイル変換


[0]ホーム

URL:


CN104493988A - High-viscosity mortar cutting process for cutting silicon chip - Google Patents

High-viscosity mortar cutting process for cutting silicon chip
Download PDF

Info

Publication number
CN104493988A
CN104493988ACN201410842346.6ACN201410842346ACN104493988ACN 104493988 ACN104493988 ACN 104493988ACN 201410842346 ACN201410842346 ACN 201410842346ACN 104493988 ACN104493988 ACN 104493988A
Authority
CN
China
Prior art keywords
mortar
density
cutting
viscosity
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410842346.6A
Other languages
Chinese (zh)
Other versions
CN104493988B (en
Inventor
荆新杰
范玉红
李佩剑
范同康
李文辉
樊入涛
周为贞
白计强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YANGGUANG GUIFENG ELECTRONIC SCIENCE & TECHNOLOGY CO., LTD.
Original Assignee
JINGWEI ELECTRONIC MATERIAL CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JINGWEI ELECTRONIC MATERIAL CO LtdfiledCriticalJINGWEI ELECTRONIC MATERIAL CO Ltd
Priority to CN201410842346.6ApriorityCriticalpatent/CN104493988B/en
Publication of CN104493988ApublicationCriticalpatent/CN104493988A/en
Application grantedgrantedCritical
Publication of CN104493988BpublicationCriticalpatent/CN104493988B/en
Expired - Fee Relatedlegal-statusCriticalCurrent
Anticipated expirationlegal-statusCritical

Links

Classifications

Landscapes

Abstract

The invention discloses a high-viscosity mortar cutting process for cutting a silicon chip and belongs to the technical field of cutting of a solar cell silicon chip. The high-viscosity mortar cutting process comprises the following steps: a, preparing mortar by adopting cutting fluid and green silicon carbide sand particles and continuously stirring to prevent sedimentation; b, separating high-density mortar and low-density mortar out of the mortar by a centrifugal separator and continuously stirring the separated high-density mortar and low-density mortar to prevent sedimentation; c, feeding the high-density mortar into a cutting seam to participate in cutting for single crystal cutting and using the low-density mortar for jetting chips in a knife edge after cutting so as to solve the problem of an adhesion phenomenon; d, recovering the high-density mortar and the low-density mortar which are used in the step c together and feeding the recovered high-density mortar and low-density mortar into centrifugal separator again for repeated use. According to the high-viscosity mortar cutting process, high-viscosity mortar can be used in the cutting of the silicon chip so as to promote cutting capacity of the silicon chip and improve a finished product ratio of products and working efficiency.

Description

A kind of high viscosity mortar cutting technique for silicon chip cutting
Technical field
Invention relates to silicon chip of solar cell cutting technique field.
Background technology
Silicon chip cutting is the operation manufacturing solar-energy photo-voltaic cell substrate, and main employing mortar multi-line cutting process, carries mortar by steel wire gauze, monocrystalline or polycrystalline silicon rod are cut into many thin slices at present.The main purpose of mortar abrasive sand is brought in cutting seam to participate in cutting.
Mortar is made up of cutting fluid and wear-resisting sand grains, and cutting fluid generally adopts wellability good, and it is strong and have polyethylene glycol (PEG) base of excellent dispersing characteristic to carborundum class abrasive material or oil base is the compound that Main Ingredients and Appearance generates that row cuts ability.In photovoltaic slice, the general PEG molecular weight that adopts is between 300-500, and viscosity is 30-55mPa.s, because of the difference of concrete cutting technique, selects viscosity different.Wear-resisting sand grains is green silicon carbide, and generally adding rear viscosity can increase several times.
At present, mortar multi-line cutting process is: the mortar prepared, put into lathe mortar jar, precipitation is prevented by agitating device, be delivered in the jet pipe of gauze top, monocrystalline both sides through mortar pump through filtering tank and cooling tower, the online online face of equal uniform flow, carries mortar by steel wire and enters in monocrystalline cutting area, realize cutting by sand grains.After cutting, mortar is back to mortar jar after coarse filtration, and recycle, a mortar changed by every cutter.Along with the development of photovoltaic industry section industry, the domestic section ceiling for accumulation level of cutting is steel wire 100 μm, diamond dust 2000#, double direction wire arrangement, cutting fluid viscosity is 36-40mPa.s, and corresponding mortar viscosity is between 160-180mPa.s, and 8 inch monocrystalline cutting times were at 8.5-9.5 hour/cutter.
Viscosity characterizes mobility, and lower, mobility is better, and viscosity more high fluidity is poorer, suspends, to carry sand grains ability better.But can show sticky glutinous with viscosity increase, namely cut the chip brought and reunite, between sheet, (edge of a knife) blocks sand grains, forms the sheet phenomenon that rises.Therefore mortar viscosity can not promote again, and working (machining) efficiency can not get promoting, and often produces the quality problems such as stria sheet because of cutting power.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of high viscosity mortar cutting technique for silicon chip cutting, and it can use high viscosity mortar in silicon chip cutting, thus promotes silicon chip cutting power, raising finished product rate and operating efficiency.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
For a high viscosity mortar cutting technique for silicon chip cutting, comprise the steps:
It is 1.48 ± 0.02g/cm that the cutting fluid of a, employing viscosity 60-65mPa.s and the green silicon carbide grains of sand are mixed with density3, viscosity is the mortar of 150 ± 10mPa.s and constantly stirs to prevent precipitation;
B, above-mentioned mortar is isolated dense slurry and low-density mortar through centrifugal screw-type seperator, and stir to prevent precipitation; Wherein, dense slurry is density is 1.68g/cm3, viscosity is 280 ± 10mPa.s, and low-density mortar is density is 1.35g/cm3, viscosity is 100 ± 10mPa.s;
C, dense slurry isolated in step b is delivered to mortar spray pipe, then be sprayed onto the steel wire gauze for cutting by mortar spray pipe, cut for silicon rod;
D, position corresponding to silicon rod below steel wire gauze are provided with soaking compartment, and the silicon rod of cutting part is positioned at the cell body of soaking compartment, and described soaking compartment comprises the square cell body that upper end is openend, is provided with inflow pipe in the bottom of square cell body; Low-density mortar isolated in step b is exported to be provided with bottom square cell body inflow pipe by mortar pump; Low-density mortar, from the spilling suitable for reading of soaking compartment, remains for soaking and rinsing carborundum between silicon chip, chip and mortar;
D, dense slurry used in step c is recovered to low-density mortar together with, again send into centrifugal separator and reuse.
Wherein, before mortar is delivered to centrifuge, first mortar is filtered.
Wherein, when adopting seperator to be separated in step b, pass through centrifugal force, mortar is by the edge got rid of to main centrifugal basket (8), the speed discrepancy that screw wing (5) and main centrifugal basket (8) control is 5-10 rev/min, the mortar of higher density is discharged from dense slurry outlet (2), discharge from low-density mortar outlet (11) overflow by paracentral comparatively low-density mortar, the centrifugal force controlled of seperator is at 600G-800G, and input flow rate is at 250-300L/h; Under stable flow, mortar forms stable density and viscosity, and dense slurry and low-density mortar outlet flow-rate ratio are: 1:1.5, and can isolate dense slurry is: density 1.68g/cm3, viscosity is 280 ± 10mPa.s; Isolating low-density mortar is: density 1.35g/cm3, viscosity 100 ± 10mPa.s.
The beneficial effect adopting technique scheme to produce is:
Dense slurry, in multi-line cutting process, is delivered in cutting seam and is participated in cutting, cut for monocrystalline by " being separated and soaking flushing " thought that the present invention introduces and method; Low-density mortar is used for spray punching cut after the edge of a knife in chip, thus solve sticky glutinous phenomenon; Solve the sticky glutinous difficult problem that high viscosity mortar occurs, the high viscosity mortar that cutting power is outstanding is applied in production, and its beneficial effect is as follows:
(1) silicon chip cutting cutting efficiency is improved.For 8 inch monocrystalline, the chip time can shorten more than 0.8 hour;
(2) improve silicon chip cut quality, solve the defects such as side stria;
(3) enhance prop-carrying capacity, thinner steel wire can be adopted to cut, reduce the loss of silicon materials, cut down finished cost further.
(4) silicon chip cut is by cutting rubbing effect, general temperature is at about 80 DEG C, and after cutting feeding, the soaking compartment in step c is immersed in silicon chip decline, and in soaking compartment, mortar temperature is generally at about 26 DEG C, by silicon chip, cutting area is lowered the temperature, solve the problem of high viscosity mortar cutting cooling difficulty; Make the silicon chip gap uniformity after cutting by the low-density mortar suspension in soaking compartment, diluting effect, chip is easy to discharge.
(5) low-density mortar flows into from soaking compartment bottom, from soaking compartment spilling suitable for reading, under the diluting effect of low-density mortar, takes away the chip after dilution and heat.
Therefore, the present invention can use high viscosity mortar in silicon chip cutting, thus promotes silicon chip cutting power, raising finished product rate and operating efficiency.
Accompanying drawing illustrates:
Fig. 1 is soaking compartment and cutting silicon rod structural representation;
Fig. 2 is separator structure schematic diagram.
In figure: 1, support; 2, dense slurry outlet; 3, mortar import is supplied; 4, screw spindle; 5, screw wing; 6, screw spindle drive motors; 7, mortar outlet is supplied; 8, main centrifugal basket; 9, drum drive motor; 10, drum driven decelerator; 11, low-density mortar outlet; 21, home roll, 22, mortar spray pipe, 23, steel wire gauze, 24, silicon rod, 25, workbench, 26, soaking compartment, 27, inflow pipe, 28, filter screen.
Detailed description of the invention
Below in conjunction with Fig. 1, Fig. 2 and specific embodiment, the present invention is further elaborated.
For a high viscosity mortar cutting technique for silicon chip cutting, concrete steps are as follows:
It is 1.48 ± 0.02g/cm that the cutting fluid of a, employing viscosity 60-65mPa.s and the green silicon carbide grains of sand are mixed with density3, viscosity is the mortar of 150 ± 10mPa.s and constantly stirs to prevent precipitation;
B, above-mentioned mortar is isolated dense slurry and low-density mortar through centrifugal screw-type seperator, and stir to prevent precipitation; Wherein, dense slurry is density is 1.68g/cm3, viscosity is 280 ± 10mPa.s, and low-density mortar is density is 1.35g/cm3, viscosity is 100 ± 10mPa.s;
C, dense slurry isolated in step b is delivered to mortar spray pipe, then be sprayed onto the steel wire gauze for cutting by mortar spray pipe, cut for silicon rod;
D, position corresponding to silicon rod below steel wire gauze are provided with soaking compartment, and the silicon rod of cutting part is positioned at the cell body of soaking compartment, and described soaking compartment comprises the square cell body that upper end is openend, is provided with inflow pipe in the bottom of square cell body; Low-density mortar isolated in step b is exported to be provided with bottom square cell body inflow pipe by mortar pump; Low-density mortar, from the spilling suitable for reading of soaking compartment, remains for soaking and rinsing carborundum between silicon chip, chip and mortar;
D, dense slurry used in step c is recovered to low-density mortar together with, again send into centrifugal separator and reuse.
In specific embodiment, before mortar is delivered to centrifuge, first mortar is filtered.
As shown in Figure 1, soaking compartment comprises the square cell body 26 that upper end is openend, the bottom of square cell body 26 is provided with inflow pipe 27, filter screen 28 is provided with in the below of square cell body 26, soaking compartment 26 is positioned at the below of steel wire gauze 23, is the free end of silicon rod 24 directly over it, is entered by low-density mortar isolated in step b by inflow pipe 27, be filtered to cutting chamber cavity of resorption through filter screen 28 after being overflowed by the upper, open end of square cell body 26, converge recovery with by the dense slurry participating in step c cutting.
As shown in Figure 2, when adopting seperator to be separated in step b, pass through centrifugal force, mortar is by the edge got rid of to main centrifugal basket 8, the speed discrepancy that screw wing 5 and main centrifugal basket 8 control is 5-10 rev/min, is discharged by the mortar of higher density, discharge by paracentral comparatively low-density mortar from low-density mortar outlet 11 overflow from dense slurry outlet 2, the centrifugal force controlled of seperator is at 600G-800G, and input flow rate is at 250-300L/h; Under stable flow, mortar forms stable density and viscosity, and dense slurry and low-density mortar outlet flow-rate ratio are: 1:1.5, and can isolate dense slurry is: density 1.68g/cm3, and viscosity is 280 ± 10mPa.s; Isolating low-density mortar is: density 1.35g/cm3, viscosity 100 ± 10mPa.s.

Claims (3)

3. a kind of high viscosity mortar cutting technique for silicon chip cutting according to claim 1, it is characterized in that: when adopting seperator to be separated in step b, pass through centrifugal force, mortar is by the edge got rid of to main centrifugal basket (8), the speed discrepancy that screw wing (5) and main centrifugal basket (8) control is 5-10 rev/min, the mortar of higher density is discharged from dense slurry outlet (2), discharge from low-density mortar outlet (11) overflow by paracentral comparatively low-density mortar, the centrifugal force controlled of seperator is at 600G-800G, input flow rate is at 250-300L/h, under stable flow, mortar forms stable density and viscosity, and dense slurry and low-density mortar outlet flow-rate ratio are: 1:1.5, and can isolate dense slurry is: density 1.68g/cm3, viscosity is 280 ± 10mPa.s, isolating low-density mortar is: density 1.35g/cm3, viscosity 100 ± 10mPa.s.
CN201410842346.6A2014-12-302014-12-30A kind of high viscosity mortar cutting technique for silicon chip cuttingExpired - Fee RelatedCN104493988B (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
CN201410842346.6ACN104493988B (en)2014-12-302014-12-30A kind of high viscosity mortar cutting technique for silicon chip cutting

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
CN201410842346.6ACN104493988B (en)2014-12-302014-12-30A kind of high viscosity mortar cutting technique for silicon chip cutting

Publications (2)

Publication NumberPublication Date
CN104493988Atrue CN104493988A (en)2015-04-08
CN104493988B CN104493988B (en)2016-03-02

Family

ID=52935487

Family Applications (1)

Application NumberTitlePriority DateFiling Date
CN201410842346.6AExpired - Fee RelatedCN104493988B (en)2014-12-302014-12-30A kind of high viscosity mortar cutting technique for silicon chip cutting

Country Status (1)

CountryLink
CN (1)CN104493988B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN105619628A (en)*2016-02-182016-06-01安徽旭能光伏电力有限公司Machining and cutting device for double-face glass crystal silicon wafers
CN106738399A (en)*2017-02-072017-05-31金海平 A multi-wire cutting machine for processing solar panels
CN108724497A (en)*2018-06-122018-11-02山东大海新能源发展有限公司A kind of photovoltaic silicon wafer production method
CN109501015A (en)*2017-09-142019-03-22株式会社迪思科Cutting apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH0985737A (en)*1995-09-221997-03-31Toray Eng Co LtdWire type cutting device
JP2000153443A (en)*1998-11-182000-06-06Tokyo Seimitsu Co LtdControl device for wire saw and method therefor
JP2008254173A (en)*2008-07-102008-10-23Sumco Techxiv株式会社Method and device for forming wafer
CN103586988A (en)*2013-11-252014-02-19王金生Scroll saw cutting machine

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH0985737A (en)*1995-09-221997-03-31Toray Eng Co LtdWire type cutting device
JP2000153443A (en)*1998-11-182000-06-06Tokyo Seimitsu Co LtdControl device for wire saw and method therefor
JP2008254173A (en)*2008-07-102008-10-23Sumco Techxiv株式会社Method and device for forming wafer
CN103586988A (en)*2013-11-252014-02-19王金生Scroll saw cutting machine

Cited By (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
CN105619628A (en)*2016-02-182016-06-01安徽旭能光伏电力有限公司Machining and cutting device for double-face glass crystal silicon wafers
CN105619628B (en)*2016-02-182017-11-17安徽旭能电力股份有限公司A kind of double-side silicon-glass piece processes cutter device
CN106738399A (en)*2017-02-072017-05-31金海平 A multi-wire cutting machine for processing solar panels
CN106738399B (en)*2017-02-072018-10-19蔡珉 A multi-wire cutting machine for processing solar panels
CN109501015A (en)*2017-09-142019-03-22株式会社迪思科Cutting apparatus
CN108724497A (en)*2018-06-122018-11-02山东大海新能源发展有限公司A kind of photovoltaic silicon wafer production method

Also Published As

Publication numberPublication date
CN104493988B (en)2016-03-02

Similar Documents

PublicationPublication DateTitle
CN104493988B (en)A kind of high viscosity mortar cutting technique for silicon chip cutting
CN102424385B (en)Apparatus and method for removing free carbon in carbonized silicon micropowder
CN101474830A (en)Technological process for slicing solar energy grade six-cun monocrystalline silicon wafer
CN102285654A (en)Production method of silicon wafer cutting blade material
CN101554757A (en)Cutting method of crystalline silicon blocks
CN106738395A (en)A kind of method of the wire cutting of crystalline silicon
CN102173419A (en)Method for recycling silicon powder from silicon slice cut waste mortar
CN106319590A (en)Horizontal type stirring sanding groove for producing efficient composite electroplated diamond wire and use method
CN204487379U (en)A kind of machine tool cutting liquid purification recovery device
CN205761808U (en)Crystal silicon wafer cutting edge material flotation defoaming device
CN204869294U (en)Multi -wire saw
CN103773587A (en)On-line silicon wafer cutting mortar recycling method and device
CN205046080U (en)Solar energy silicon chip cutting antiquated sand thick liquid recovery processing device
CN202006519U (en)Mortar circulating and supplying system of multi-wire saw
CN102776062B (en)Treatment method of silicon wafer cutting liquid waste
CN102806609A (en)Efficient and low-cost hollow-out method for sapphire wafer bar
CN106957710B (en)Solar silicon wafer cutting fluid based on shear thickening mechanism and preparation method thereof
CN202214225U (en)Device for removing free carbon in silicon carbide micro powder
CN206661419U (en)Carborundum mixed slurry grading plant
CN116177552A (en)Silicon wafer cutting fluid silicon powder recovery system and process thereof
CN205740379U (en)A kind of attapulgite clay Integral ultrasonic dissociates purifying plant
CN106179715B (en)Crystal silicon wafer cutting edge material fine powder minimizing technology
CN213172647U (en)Sand feeding groove for electroplating diamond wire production
CN205095931U (en)Carborundum granule sorting unit
CN203400560U (en)Silicon carbide mortar filter press

Legal Events

DateCodeTitleDescription
C06Publication
PB01Publication
C10Entry into substantive examination
SE01Entry into force of request for substantive examination
C14Grant of patent or utility model
GR01Patent grant
C41Transfer of patent application or patent right or utility model
TR01Transfer of patent right

Effective date of registration:20160321

Address after:065201 No. 748 Yingbin North Road, Yanjiao hi tech Development Zone, Langfang, Hebei, Sanhe

Patentee after:YANGGUANG GUIFENG ELECTRONIC SCIENCE & TECHNOLOGY CO., LTD.

Address before:065201, Langfang, Hebei province Yanjiao Town, Sanhe hi tech Zone Yingbin North Road No. 748 Crystal Dragon Group Industrial Park

Patentee before:JINGWEI ELECTRONIC MATERIAL CO., LTD.

CF01Termination of patent right due to non-payment of annual fee
CF01Termination of patent right due to non-payment of annual fee

Granted publication date:20160302

Termination date:20171230


[8]ページ先頭

©2009-2025 Movatter.jp