Specific implementation mode
Hereinafter, substrate processing method using same and substrate board treatment embodiment party disclosed herein is described in detail with reference to the attached drawingsFormula.In addition, the present invention is not limited by embodiment as shown below.
1st embodiment
The content of substrate processing method using same
First, the substrate processing method using same of the 1st embodiment is illustrated using Figure 1A~Fig. 1 C.Figure 1A~Fig. 1 C are the 1st implementationThe definition graph of the substrate processing method using same of mode.
It, can be in the case where not limited by Q-time to being formed in the substrate processing method using same of the 1st embodimentThe substrates (hereinafter, being recorded as wafer W) such as the semiconductor crystal wafer that at least part of internal metal wiring exposes are handled.
Herein, Q-time is referred to such as the oxidation of the metal wiring exposed due to dry ecthing in order to prevent and needleTo the limitation time of the standing time setting after dry ecthing.
It after setting Q-time, needs for the time management in accordance with Q-time, it is possible to the increase in working hourAnd generate the reduction of productivity.In addition, in the case where set Q-time is shorter, the difficulty of line management increases.CauseThis, also worries the reduction for leading to productivity because of the complication of line management.
As shown in Figure 1A, wafer W has such as wiring layer 101, lining form (Japanese：ラ イ ナ ー films) 103 and interlayer it is exhaustedVelum 104.Above-mentioned wiring layer 101, lining form 103 and interlayer dielectric 104 are exhausted according to wiring layer 101, lining form 103 and interlayerThe sequence of velum 104 is laminated.The Cu wirings 102 of an example as metal wiring are formed in wiring layer 101.
In addition, wafer W has via hole 106.Via hole 106 is formed by dry ecthing.Via hole 106 reaches wiring layer101, the state gone out to the bottom-exposed of surface from via hole 106 as Cu wirings 102.
In the substrate processing method using same of the 1st embodiment, as shown in Figure 1B, on wafer W supply containing volatile ingredient,Treatment fluid (hereinafter, being recorded as " film forming treatment fluid ") for forming film on wafer W.Specifically, in the 1st embodimentIn, supply on wafer W for forming top coat applying film (Japanese on wafer W：ト ッ プ U ー ト films) film forming with treatment fluid (withUnder, it is recorded as " top coating liquid ").
Herein, top coat applying film is the upper surface that resist film is immersed and be coated in liquid immersion liquid in order to prevent to resist filmProtective film.In addition, liquid immersion liquid is, for example, liquid used in immersion exposure in photo-mask process.
The volatile ingredient that the top coating liquid being supplied on wafer W contains inside it volatilizees due to volume contraction one occurs on one sideWhile being cured or hardened, to become top coat applying film (C referring to Fig.1).It is being cured or hardened in addition, containing to have in pushing up coating liquidThe acrylic resin for the property that Shi Tiji is shunk also can cause top coat to be applied by the curing shrinkage of the acrylic resinThe volume contraction of liquid.In addition, " solidification " described herein means generation solidification, " hardening " means molecule phase each otherLink and producing high-molecular (such as crosslinking, polymerization etc.) occurs.
When being formed with top coat applying film on wafer W, the Cu wirings 102 exposed by dry ecthing become by top coat applying filmThe state of covering.Wafer W is accommodated in transport box with the state.
In this way, using the substrate processing method using same of the 1st embodiment, the Cu wirings exposed are protected by using top coat applying film102 and so that the Cu wirings 102 exposed the harmful effects such as is not aoxidized, therefore Q-time need not be set.Due to not needing Q-Time, there is no need for the time managements in accordance with Q-time, in addition it is possible to prevent raw caused by accordance with Q-timeThe complication of producing line management.Thus, using the substrate processing method using same of the 1st embodiment, productivity can be improved.
In addition, due to moisture, the oxygen in the residual gas and air of dry ecthing react and reaction product P growth.In contrast, using the substrate processing method using same of the 1st embodiment, the Cu wirings 102 exposed are protected by using top coat applying film,It can inhibit the growth of reaction product P.Thus, additionally it is possible to prevent electrical characteristics reduction, finished product caused by reaction product PThe harmful effects such as rate reduction.
In addition, in the substrate processing method using same of the 1st embodiment, also it is handled as follows：Conveying is accommodated in taking-up to holdAfter the wafer W of device, removal is formed in the top coat applying film on wafer W, thus removes the polymerization generated by dry ecthing or ashingThe reaction products such as object P.
Specifically, removal liquid of the supply for removing top coat applying film in top coat applying film.In the 1st embodiment, makeAlkaline developer is used for removal liquid.
By supplying alkaline developer, to which top coat applying film be removed from wafer W.At this point, remaining in the reaction life on wafer WIt is also removed from wafer W together with top coat applying film at object P.Thereby, it is possible to remove reaction product P from wafer W.
In this way, using the substrate processing method using same of the 1st embodiment, since reaction life can be removed without utilizing chemical actionAt object, therefore etching action can be inhibited etc. to damage caused by Cu wirings 102.
Thus, using the substrate processing method using same of the 1st embodiment, can inhibit to remain in after dry ecthing or after ashingReaction product P on wafer W removes the reaction product P while damage caused by wafer W.In addition, in top coat applying filmIt is formed in after wafer W, top coat applying film can all be removed from wafer W without pattern exposure.
Top coating liquid is cured or hardened while volume contraction occurs, to become top coat applying film.At this moment because topThe volume contraction of coating liquid and under the action of the strain (drawing force) that generates, can also make to remain in the reaction on wafer W and generateObject P is detached with wafer W.
Since top coating liquid by the curing shrinkage of the volatilization of volatile ingredient and acrylic resin by occurring volume contraction, becauseThis, cubical contraction is more than the cubical contraction of the only film forming treatment fluid containing volatile ingredient, so as to strongly makeReaction product P separation.It is received especially since the curing shrinkage of acrylic resin is more than other hardening of resins such as epoxy resinContracting, therefore, on applying drawing force this aspect to reaction product P, it is effective to push up coating liquid.
In addition, top coat applying film can be swollen when removing top coat applying film using alkaline developer.Therefore, implement using the 1stThe substrate processing method using same of mode, other than the volume contraction generated by the volatilization of top coat applying film, additionally it is possible to by because of top coatThe swelling of applying film and the volume expansion that generates makes reaction product P strongly be detached with wafer W.
In addition, in the 1st embodiment, reaction product P is improved by the way that the liquid with alkalinity is used as removal liquidRemoval efficiency.
By supplying alkaline developer, the interface of identical polar is generated on the surface of wafer W and the surface of reaction product PElectromotive force.Reaction product P electrifications after being detached with wafer W etc. because pushing up the volume change of coating liquid and have and wafer W phasesThe interface electromotive force of same polarity, thus can be mutually exclusive with wafer W.Thereby, it is possible to prevent reaction product P again to wafer WDeng attachment.
In this way, after making reaction product P and wafer W etc. detach using the volume contraction of top coating liquid, reaction is made to generateObject P generates the interface electromotive force of identical polar with wafer W, and thereby, it is possible to prevent the attachment again of reaction product P, therefore energyEnough improve the removal efficiency of reaction product P.
In addition, as alkaline developer, as long as containing such as ammonia, tetramethylammonium hydroxide (Tetra MethylAmmonium Hydroxide：) and at least one of aqueous choline base solution TMAH.
In addition, using the substrate-cleaning method of the 1st embodiment, additionally it is possible to be easily removed and for example utilize physical force in useCleaning method when be difficult to it is removing, enter reaction product P in via hole 106.
In addition, finally the top coat applying film being formed on wafer W can all be removed from wafer W.Thus, removal top coat is appliedWafer W after film become supply top coating liquid before state, become the state that Cu wirings 102 expose.
The structure of base plate processing system
Next, illustrating the structure of the base plate processing system for executing aforesaid substrate processing method with reference to Fig. 2.Fig. 2 isIndicate the figure of the outline structure of the base plate processing system of the 1st embodiment.
As shown in Fig. 2, the base plate processing system 1 of the 1st embodiment includes the 1st processing unit 2 as pretreating deviceWith the 2nd processing unit 3 as after-treatment device.In addition, base plate processing system 1 includes the control dresses of the 1st control device 4A and the 2ndSet 4B.
1st processing unit 2 is used to carry out dry ecthing to wafer W, pushes up coating liquid to wafer W supplies.In addition, the 2nd processing dress3 are set for supplying alkaline developer to through 2 processed wafer W of the 1st processing unit.
1st control device 4A is, for example, computer comprising control unit 401 and storage part 402.Storage part 402 is by for exampleRAM(Random Access Memory：Random access memory), ROM (Read Only Memory：Read-only memory), hard disk thisThe storage device of sample is constituted, and is stored with the program for being controlled the various processing executed in the 1st processing unit 2.Control unit 401 is, for example, CPU (Central Processing Unit：Central processing unit), it is stored by reading and executingProgram in storage part 402 controls the action of the 1st processing unit 2.
Similarly, the 2nd control device 4B is, for example, computer comprising control unit 403 and storage part 404.Storage part 404Storage device is constituted as such as RAM, ROM, hard disk, is stored with for various to being executed in the 2nd processing unit 3Handle the program controlled.Control unit 403 is, for example, CPU, by reading and executing the journey being stored in storage part 404Sequence controls the action of the 2nd processing unit 3.
In addition, above procedure is either being stored in can also be by the program in storage medium that computer is readIt is installed to the program in the storage part 402 of the 1st control device 4A, the storage part 404 of the 2nd control device 4B from the storage medium.As can by computer read storage medium, exist such as hard disk (HD), floppy disk (FD), CD (CD), photomagneto disk (MO) withAnd storage card etc..
The structure of 1st processing unit
Next, illustrating the structure of the 1st processing unit 2 with reference to Fig. 3.Fig. 3 is the outline structure for indicating the 1st processing unit 2Figure.In addition, hereinafter, in order to make position relationship understand, mutually orthogonal X-axis, Y-axis and Z axis are provided, by Z axis prosTo being set as vertical upwardly-directed.
As shown in figure 3, the 1st processing unit 2 includes input/output station 5 and treating stations 6.6 phase of input/output station 5 and treating stationsIt is arranged adjacently.
Input/output station 5 includes mounting portion 10 and delivery section 11.Be placed in mounting portion 10 multiple transport boxs (withUnder, it is recorded as load-bearing part C), multiple transport box is for storing multiple wafers W with horizontality.
Delivery section 11 is disposed adjacently with mounting portion 10, has base board delivery device 111 in the inside of delivery section 11.SubstrateConveying device 111 has the wafer holding mechanism for keeping wafer W.In addition, base board delivery device 111 can be in the horizontal directionWith move in vertical direction and pivoted about with vertical axis, using wafer holding mechanism load-bearing part C with processingStand conveying wafer W between 6.
Specifically, base board delivery device 111 is handled as follows：Wafer W is placed in the load-bearing part C of mounting portion 10 certainlyIt takes out, and the wafer W after taking-up is inputted to the dry ecthing unit 12 of aftermentioned treating stations 6.In addition, base board delivery device 111Also it is handled as follows：Wafer W is taken out from the 1st liquid processing unit 14 of aftermentioned treating stations 6, and by the wafer W after taking-upIt is accommodated in the load-bearing part C of mounting portion 10.
Treating stations 6 are disposed adjacently with delivery section 11.Treating stations 6 include dry ecthing unit 12, load lock 13And the 1st liquid processing unit 14.
Dry ecthing unit 12 is equivalent to an example of pre-treatment portion, after to being inputted by base board delivery device 111Wafer W carries out dry etch process.Via hole 106 is formed as a result, to keep the Cu wirings 102 (A referring to Fig.1) inside wafer W sudden and violentDew.
In addition, dry etch process carries out under a reduced pressure.In addition, in dry ecthing unit 12, at dry ecthingAfter reason, sometimes into the ashing processing for being about to unwanted resist removal.
Load lock 13, which is configured to its internal pressure, to be carried out between atmospheric pressure state and decompression stateSwitching.It is internally provided with base board delivery device (not shown) in load lock 13.Utilize load lock 13By treated in completing dry ecthing unit 12, wafer W is exported base board delivery device (not shown) from dry ecthing unit 12,And it is inputted to the 1st liquid processing unit 14.
Specifically, the inside of load lock 13 is maintained as decompression state, until by wafer W from dry ecthing listUntil 12 output of member, after completing to export, supply nitrogen, the non-active gas such as argon gas and will be in load lock 13Portion is switched to atmospheric pressure state.Also, after being switched to atmospheric pressure state, the substrate (not shown) of load lock 13Conveying device inputs wafer W to the 1st liquid processing unit 14.
In this way, being exported in the phase played until being input into the 1st liquid processing unit 14 from dry ecthing unit 12 in wafer WInterior, wafer W completely cuts off with extraneous air, so as to prevent the oxidation of the Cu wirings 102 exposed.
Then, the 1st liquid processing unit 14 handled to the film forming treatment fluid supply of wafer W supplies top coating liquid.Such asUpper described, the top coating liquid being supplied on wafer W is cured or hardened while volume contraction occurs, to be applied as top coatFilm.The Cu wirings 102 exposed as a result, become the state covered by top coat applying film.
Film forming supplies to treated that wafer W is accommodated in load-bearing part C using base board delivery device 111 with treatment fluid, later,By the supply of film forming treatment fluid, treated that wafer W is conveyed to the 2nd processing unit 3.
The structure of 2nd processing unit
Next, illustrating the structure of the 2nd processing unit 3 with reference to Fig. 4.Fig. 4 is the outline structure for indicating the 2nd processing unit 3Figure.
As shown in figure 4, the 2nd processing unit 3 includes input/output station 7 and treating stations 8.8 phase of input/output station 7 and treating stationsIt is arranged adjacently.
Input/output station 7 includes mounting portion 16 and delivery section 17.Multiple load-bearing part C are placed in mounting portion 16.
Delivery section 17 is disposed adjacently with mounting portion 16, is had base board delivery device 171 in the inside of delivery section 17 and is handed overSocket part 172.Base board delivery device 171 has the wafer holding mechanism for keeping wafer W.In addition, 171 energy of base board delivery deviceIt is enough in the horizontal direction with move in vertical direction and pivoted about with vertical axis, held using wafer holding mechanismWafer W is conveyed between holder C and junction 172.
Treating stations 8 are disposed adjacently with delivery section 17.Treating stations 8 include delivery section 18 and multiple 2nd liquid processing units 19.Multiple 2nd liquid processing units 19 are arranged in a manner of being arranged in the both sides of delivery section 18.
Delivery section 18 has base board delivery device 181 in inside.Base board delivery device 181 has for keeping wafer W'sWafer holding mechanism.In addition, base board delivery device 181 can in the horizontal direction with moved in vertical direction and with vertical axis beCenter is rotated, and wafer W is conveyed between junction 172 and the 2nd liquid processing unit 19 using wafer holding mechanism.
In the 2nd processing unit 3, the base board delivery device 171 of input/output station 7 will be processed through the 1st processing unit 2Wafer W takes out from load-bearing part C, and the wafer W after taking-up is placed in junction 172.Utilize the base board delivery device for the treatment of stations 8The wafer W for being placed in junction 172 is taken out from junction 172 and is inputted to the 2nd liquid processing unit 19 by 181.
In the 2nd liquid processing unit 19, the processing etc. of top coat applying film is carried out to wafer W supply alkaline developers and removed.ByThis, the reaction product P remained on wafer W can be removed with the stripping of top coat applying film.In addition, in the 2nd liquid processing unitIn 19, also the wafer W after eliminating top coat applying film is cleaned using liquid.Herein, DHF (dilute hydrogen is used as liquidFluoric acid).
Later, wafer W is exported using base board delivery device 181 from the 2nd liquid processing unit 19 and is placed in wafer WJunction 172.Then, the wafer W after the completion of being placed in the processing of junction 172 is returned to using base board delivery device 171The load-bearing part C of mounting portion 16.
The structure of dry ecthing unit
Next, the structure of each unit possessed by above-mentioned 1st processing unit 2 of explanation and the 2nd processing unit 3.First, joinIllustrate the structure of dry ecthing unit 12 possessed by the 1st processing unit 2 according to Fig. 5.Fig. 5 is the structure for indicating dry ecthing unit 12The schematic diagram of one example.
As shown in figure 5, dry ecthing unit 12 has the chamber 201 of the airtight construction for storing wafer W, in chamber 201It is interior to be equipped with for the mounting table 202 by wafer W mountings for horizontality.Mounting table 202 have for cooling down or heat wafer W andThe thermoregulation mechanism 203 of temperature as defined in being adjusted to.It is equipped on the side wall of chamber 201 for true with load interlockingThe input/output port (not shown) of input and output is carried out between empty room 13 to wafer W.
It is equipped with nozzle 204 at the top of chamber 201.Nozzle 204 is connected with gas supply pipe 205.The gas supply pipe205 are connected via valve 206 with etching gas supply source 207, can self etching gas supply source 207 to nozzle 204 supply adviseFixed etching gas.Self etching gas supply source 207 is supplied the etching gas to come and is supplied into chamber 201 by nozzle 204.
In addition, the etching gas that self etching gas supply source 207 supplies is, for example, CH3F gases, CH2F2Gas, CF4GasBody, O2Gas, Ar gases etc..
The bottom of chamber 201 is connected via exhaust line 208 with exhaust apparatus 209.The pressure of the inside of chamber 201 is logicalIt crosses the exhaust apparatus 209 and maintains decompression state.
Dry ecthing unit 12 is constituted as described above, after being depressurized to the inside of chamber 201 using exhaust apparatus 209In the state of, etching gas is supplied into chamber 201 from nozzle 204, and thus the wafer W for being placed in mounting table 202 is doneEtching.The state for forming via hole 106 (A referring to Fig.1) on wafer W as a result, and being exposed as Cu wirings 102.
In addition, in dry ecthing unit 12, will such as resist film as mask and to 104 (reference of interlayer dielectricAfter Figure 1A) carrying out dry ecthing, the ashing for removing resist film is carried out sometimes and is handled.
The structure of 1st liquid processing unit
Next, illustrating the structure of the 1st liquid processing unit 14 possessed by the 1st processing unit 2 with reference to Fig. 6.Fig. 6 is to indicateThe schematic diagram of one example of the structure of the 1st liquid processing unit 14.
As shown in fig. 6, the 1st liquid processing unit 14 include chamber 20, substrate holding mechanism 30, liquid supply unit 40_1,40_2,And recycling cup 50.
Chamber 20 is for storing substrate holding mechanism 30, liquid supply unit 40_1,40_2 and recycling cup 50.In chamber 20Top be equipped with FFU (Fan Filter Unit：Wind turbine filter module) 21.FFU21 is used to form sinking in chamber 20.
FFU21 is connected via valve 22 with non-active gas supply source 23.FFU21 is non-live for being injected from into chamber 20Property gas supply source 23 supply the N that comes2The non-active gas such as gas.In this way, by the way that non-active gas is used as to decline gasBody can prevent the Cu wirings 102 (A referring to Fig.1) exposed from aoxidizing.
Substrate holding mechanism 30 includes：Rotating holding portion 31 keeps wafer W in a manner of wafer W can be made to rotate；WithAnd fluid supply unit 32, through the hollow portion 314 of rotating holding portion 31, for the lower surface supply gas to wafer W.
Rotating holding portion 31 is set to the substantial middle of chamber 20.The upper surface of the rotating holding portion 31 be equipped with for fromSide keeps the holding member 311 of wafer W.The holding member 311 is slightly spaced with wafer W and the upper surface of rotating holding portion 31Status level keep wafer W.
In addition, rotating holding portion 31 has the band etc. from motor, for transmitting the rotation of motor to rotating holding portion 31The driving mechanism 312 of composition.Rotating holding portion 31 rotates under the action of driving mechanism 312 around vertical axis.Then, pass throughRotating holding portion 31 is set to rotate, to make the wafer W that remain by rotating holding portion 31 integrally be rotated with rotating holding portion 31.In addition, rotating holding portion 31 can rotatably be supported on chamber 20 and recycling cup 50 by bearing 313.
Fluid supply unit 32 is applied in the hollow portion 314 that the center of rotating holding portion 31 is formed.In fluid supply unit 32Inside is formed with flow path 321.The flow path 321 is via valve 33 and N2Supply source 34 is connected.Fluid supply unit 32 will be from N2Supply sourceThe N that 34 supplies come2Gas is supplied via valve 33 and flow path 321 to the lower surface of wafer W.
The N supplied via valve 332Gas is the N of high temperature (for example, 90 DEG C or so)2Gas is used for aftermentioned volatilization and promotesProcessing.
The base board delivery device (not shown) of bootstrap loading lock 13 is wanted to receive wafer W in substrate holding mechanism 30When, in the state of after so that fluid supply unit 32 is increased using elevating mechanism (not shown), wafer W is placed in and is supplied in fluidTo on the fulcrum post (not shown) being arranged on the upper surface in portion 32.Later, substrate holding mechanism 30 is in the case where making fluid supply unit 32Behind position as defined in dropping to, wafer W is given to the holding member 311 of rotating holding portion 31.In addition, being wanted in substrate holding mechanism 30When giving the wafer W after the completion of processing to base board delivery device 111, make fluid supply unit 32 using elevating mechanism (not shown)Rise, to which the wafer W that remain by holding member 311 to be placed on fulcrum post (not shown).Then, substrate holding mechanism30 give the wafer W being positioned on fulcrum post (not shown) to base board delivery device 111.
Liquid supply unit 40_1 includes nozzle 41a~nozzle 41c, arm 42 and rotary lifting mechanism 43.
Nozzle 41a is connected via valve 44a with DHF supply sources 45a, and nozzle 41b is via valve 44b and DIW supply source 45b phasesConnection, nozzle 41c are connected via valve 44c with IPA supply sources 45c.In addition, the DHF to come from nozzle 41a supplies is to be dilutedTo the diluted hydrofluoric acid for the concentration for not corroding 102 degree of Cu wirings.In addition, arm 42 is used for horizontal supporting nozzle 41a~nozzle 41c,Rotary lifting mechanism 43 is for making arm 42 rotate and lift.
In liquid supply unit 40_1, from nozzle 41a to liquid (being herein DHF) as defined in wafer W supplies, from nozzle41b supplies wafer W a kind of DIW (pure water) as flushing liquor, from nozzle 41c to wafer W supplies as dry solventA kind of IPA (isopropanols：isopropyl alcohol).
In addition, liquid supply unit 40_2 includes nozzle 41d, 41e, for arm 42, the Yi Jiyong of horizontal supporting nozzle 41d, 41eIn the rotary lifting mechanism 43 for making arm 42 rotate and lift.Nozzle 41d is connected via valve 44d with MIBC supply sources 45d, nozzle41e is connected via valve 44e with top coating liquid supply source 45e.
The liquid supply unit 40_2 is from nozzle 41d to wafer W supplies as the solvent affinity with top coating liquidMIBC (4- methyl -2- amylalcohols：4-Methyl-2-pentanol), and from nozzle 41e supplies coating liquid is pushed up.
Also contain MIBC in pushing up coating liquid, MIBC and top coating liquid are affinity.In addition, as other than MIBC withThe affinity solvent of coating liquid is pushed up, such as PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether vinegar can also be usedAcid esters) etc..
In addition, herein, dedicated nozzle 41a~nozzle 41e, but a variety for the treatment of fluids are respectively provided with to each treatment fluidIt can be with common nozzle.It is inferior the case where for example not wanting that treatment fluid is made to be mixed with each other but when by nozzle sharing, it needsThe process that the treatment fluid remained in nozzle, piping is temporarily discharged, this can unnecessarily consume treatment fluid.If in contrast, settingDedicated nozzle 41a~nozzle 41e is set, then no longer needs the process for treatment fluid to be discharged therefore will not as described aboveUnnecessarily consume treatment fluid.
Recycling cup 50 is configured in a manner of surrounding rotating holding portion 31, to collect the eleutheromorph due to rotation of rotating holding portion 31The treatment fluid that circle W disperses.It is formed with leakage fluid dram 51 in the bottom of recycling cup 50, will be collected into from the leakage fluid dram 51 by recycling cup 50Treatment fluid be discharged to the outside of the 1st liquid processing unit 14.In addition, being formed with exhaust outlet 52 in the bottom of recycling cup 50, certainly shouldThe N that exhaust outlet 52 will be supplied by fluid supply unit 322Gas or the non-active gas to come from FFU21 supplies are discharged to the 1stThe outside of liquid processing unit 14.
The structure of 2nd liquid processing unit
Next, illustrating the structure of the 2nd liquid processing unit 19 possessed by the 2nd processing unit 3 with reference to Fig. 7.Fig. 7 is to indicateThe schematic diagram of one example of the structure of the 2nd liquid processing unit 19.
As shown in fig. 7, the 2nd liquid processing unit 19 include in the chamber 60 substrate holding mechanism 70, liquid supply unit 80 andRecycle cup 90.
Substrate holding mechanism 70 includes rotating holding portion 71, column sections 72 and driving portion 73.Rotating holding portion 71 is arrangedIn the substantial middle of chamber 60.It is equipped with the holding member for keeping wafer W from side in the upper surface of the rotating holding portion 71711.The holding member 711 keeps wafer W with the status level that the upper surface of wafer W and rotating holding portion 71 are slightly spaced.BranchColumn portion 72 is the component extended along vertical direction, and the bearing of base end part driven part 73 is can rotate, and column sections 72 are on topPortion's horizontal supporting rotating holding portion 71.Driving portion 73 is for making column sections 72 be rotated around vertical axis.
The substrate holding mechanism 70 makes column sections 72 rotate by using driving portion 73, to make to be supported on column sections 72Rotating holding portion 71 rotates, and makes the wafer W rotations that remain by rotating holding portion 71 as a result,.
Liquid supply unit 80 includes nozzle 81a~nozzle 81c, arm 82 and rotary lifting mechanism 83.
Nozzle 81a is connected via valve 84a with DHF supply sources 85a, and nozzle 81b is via valve 84b and alkaline developer supply source85b is connected, and nozzle 81c is connected via valve 84c with DIW supply sources 85c.Arm 82 is used for horizontal supporting nozzle 81a~nozzle81c.Rotary lifting mechanism 83 is for making arm 82 rotate and lift.
In the liquid supply unit 80, the DHF as defined liquid is supplied to wafer W from nozzle 81a, from 81b pairs of nozzleAlkaline developer of the wafer W supplies as the removal liquid for removing top coat applying film, from nozzle 81c to being used as punching to wafer W suppliesThe DIW of washing lotion.
In the corrosion inhibitor for containing the corrosion for being useful for preventing Cu wirings 102 from the alkaline developer that nozzle 81b supplies come.ByThis can inhibit removal top coat while to damage caused by Cu wirings 102 to apply in aftermentioned removal liquid supply processingFilm.In addition, the DHF to come from nozzle 81a supplies to be diluted to the concentration for the degree for not corroding Cu wirings 102.
Treatment fluid disperses to surrounding in order to prevent, and recycling cup 90 is configured in a manner of surrounding rotating holding portion 71.It is recyclingThe bottom of cup 90 is formed with leakage fluid dram 91, and the treatment fluid being collected by recycling cup 90 is discharged to the 2nd liquid from the leakage fluid dram 91Manage the outside of unit 19.
In this way, the 2nd liquid processing unit 19 of the 1st embodiment is equivalent to the removal for removing top coat applying film from wafer WPortion and for eliminate the wafer W after top coat applying film carry out as defined in the example of post-processing section that post-processes.
The specific action of base plate processing system
Next, illustrating the specific action of base plate processing system 1 with reference to Fig. 8.Fig. 8 is the embodiment for indicating the 1stThe flow chart of the processing step of processing substrate.In addition, various processes shown in Fig. 8 are based on the controls of the 1st control device 4A or the 2ndThe control of device 4B processed and carry out.
In the base plate processing system 1 of the 1st embodiment, carried out from dry ecthing shown in Fig. 8 in the 1st processing unit 2The processing until the 1st output processing (step S107) is played in processing (step S101), is carried out in the 2nd processing unit 3 from removalThe processing until the 2nd output processing (step S110) is played in liquid supply processing (step S108).
As shown in figure 8, first, dry etch process (step S101) is carried out in dry ecthing unit 12.At the dry ecthingIn reason, dry ecthing unit 12 carries out dry ecthing, ashing to wafer W.As a result, expose the Cu wirings 102 set on the inside of wafer W(A referring to Fig.1).
Then, wafer W is inputted to the 1st liquid processing unit 14.Since the input processing is via load lock13 progress, therefore the oxidation of Cu wirings 102 exposed can be prevented.
Then, liquid processing (step S102) is carried out in the 1st liquid processing unit 14.In liquid processing, liquid is made to supplyIt is located at the overcentre of wafer W to the nozzle 41a of portion 40_1 (with reference to Fig. 6).Later, DHF is supplied to wafer W from nozzle 41a.ForThe DHF being given on wafer W expands under the action of the centrifugal force that the rotation with wafer W generates in the main surface of wafer WExhibition.
As a result, Cu wirings 102, reaction product P surface slightly dissolved by DHF, to make the attachment of reaction product PPower dies down.Thus, it is possible to as the state of reaction product P is easily removed.
Herein, the liquid processing of step S102 is the processing that carries out for ease of removal reaction product P, is willIt is carried out under the low etching condition for the degree that reaction product P is completely removed.Low etching condition refers to for example with than that will react lifeCompletely removed at object P and the condition that is etched of the etching period that needs short time or with more complete than by reaction product PRemove and the condition that is etched of the concentration of the DHF that needs the concentration of DHF low.
Therefore, in the past like that merely with DHF come the case where removing reaction product P compared with, can inhibit Cu wiringsReaction product P is more effectively removed while 102 damage.In addition, in the 1st embodiment, come from nozzle 41a suppliesDHF be diluted to the concentration for the degree for not corroding Cu wirings 102, therefore can more reliably inhibit the damage of Cu wirings 102Wound.
In liquid processing, it is easily removed the smaller reaction product P of grain size, is utilizing aftermentioned top coating liquid and alkalinityRemoval liquid during removing reaction product P, is easily removed the larger reaction product P of grain size.Thus, it is possible to pass through byAbove-mentioned processing combines more effectively to remove reaction product P.
In addition, the liquid to come from nozzle 41a supply is not limited to DHF, can also be containing such as ammonium fluoride, hydrochloric acid,The water of sulfuric acid, hydrogen peroxide, phosphoric acid, acetic acid, nitric acid, ammonium hydroxide (ammonium hydroxide), organic acid or ammonium fluorideSolution etc..
Then, in the 1st liquid processing unit 14, the flushing processing (step that the main surface of wafer W is rinsed using DIW is carried outS103).In flushing processing, nozzle 41b is made to be located at the overcentre of wafer W (with reference to Fig. 6).Later, by beating valve 44bThe stipulated time is opened, DIW is supplied to the main surface of the wafer W from from nozzle 41b to rotation, the DHF remained on wafer W is rushedFall.
Then, in the 1st liquid processing unit 14, replacement Treatment (step S104) is carried out.In the replacement Treatment, make nozzle41c is located at the overcentre of wafer W (with reference to Fig. 6).Later, by the way that valve 44c is opened the stipulated time, to from nozzle 41c toThe main surface of the wafer W of rotation supplies IPA, and the DIW on wafer W is replaced into IPA.Later, remain IPA's on wafer WStop the rotation of wafer W under state.After completing replacement Treatment, liquid supply unit 40_1 is made to be moved to the outside of wafer W.ThisOutside, the processing of step S102~step S104 is not necessarily to implement.
Then, in the 1st liquid processing unit 14, solvent supply processing (step S105) is carried out.Solvent supply processing beIt is affinity for giving the top coating liquid as the forward direction wafer W of the top coating liquid of film forming treatment fluid to wafer W suppliesThe processing of MIBC.
Specifically, make the overcentre that the nozzle 41d of liquid supply unit 40_2 is located at wafer W, later, from nozzle 41d toWafer W supplies MIBC.The MIBC being supplied on wafer W is spread out under the action of the centrifugal force that the rotation with wafer W generatesMain surface coated on wafer W.
In this way, the MIBC affinity with coating liquid is pushed up by spreading coating out on wafer W in advance, to aftermentionedDuring film forming is handled with treatment fluid supply, top coating liquid is easy to extend on wafer W, and is also easy to enter via hole 106.CauseAnd can inhibit to push up the consumption of coating liquid, and the reaction product P that can more reliably will go into via hole 106 is goneIt removes.
MIBC and top coating liquid are affinity, but for DIW, MIBC is not mixed substantially with it, parentIt is relatively low with property.In contrast, in the 1st liquid processing unit 14, before supplying MIBC, DIW is replaced using IPA, IPA withThe compatibility between compatibility ratio DIW and MIBC between MIBC is high.As a result, with after flushing handles (step S103) immediately intoThe case where row solvent supply processing (step S105), is compared, and is easy to that MIBC is made to extend in the main surface of wafer W, so as to press downThe consumption of MIBC processed.
In addition, not only affinity with film forming treatment fluid with the affinity solvent of film forming treatment fluid andAnd with DIW it is also affinity in the case of, the replacement Treatment of step S104 can also be omitted.
In this way, be intended to by the top coat applying film short time and the case where efficiently spreading the upper surface coated on wafer W out it is inferior, it is excellentChoosing carries out above-mentioned solvent supply processing.In addition, in the case where film forming treatment fluid and IPA are affinity, can also omitThe solvent supply of step S105 is handled.
Then, it in the 1st liquid processing unit 14, forms a film and handles (step S106) with treatment fluid supply.In the film formingIn being handled with treatment fluid supply, the nozzle 41e of liquid supply unit 40_2 is made to be located at the overcentre of wafer W.Later, from nozzle 41eThe top coating liquid as film forming treatment fluid is supplied to the main surface for the i.e. wafer W of circuit forming face for not forming resist film.
The top coating liquid on wafer W is supplied under the action of the centrifugal force that the rotation with wafer W generates in wafer WMain surface on extend (B referring to Fig.1).The liquid film of top coating liquid is formed with (with reference to figure in the entire main surface of wafer W as a result,1B).At this point, the main surface of wafer W as its wetability after the MIBC being supplied on wafer W in step S105 is improvedState.Top coating liquid is set to be easy to extend and be also easy to enter in via hole 106 in the main surface of wafer W as a result,.Thus,The usage amount of top coating liquid and the cripetura it is possible to realize processing time can be cut down.
Volatile ingredient is set to volatilize by the rotation of wafer W, to make top coating liquid be cured or hardened.As a result, in wafer WEntire main surface on formed top coat applying film.
Then, in the 1st liquid processing unit 14, volatilization promotion processing is carried out.Volatilization promotion processing is for promotingThe processing of the volatile ingredient contained in the top coating liquid of the entire main surface formation film of wafer W further volatilized.It is specific andSpeech, by the way that valve 33 is opened the stipulated time (with reference to Fig. 6), to the back side supply of the wafer W from from fluid supply unit 32 to rotationThe N of high temperature2Gas.Top coating liquid is heated and is promoted as a result, the volatilization of volatile ingredient together with wafer W.
In addition, volatilization promotes processing either making in chamber 20 as decompression state using decompressor (not shown)Processing can also be the processing for making the humidity in chamber 20 reduce using the gas to come from FFU21 supplies.Pass through above-mentioned placeReason, can also promote the volatilization of volatile ingredient.
In addition, herein, showing that the 1st liquid processing unit 14 carries out example when volatilization promotes processing, but can also omitPromotion of volatilizing is handled.That is, wafer W can also be made standby at the 1st liquid processing unit 14, until top coating liquid spontaneous curing or firmlyIt turns to only.Alternatively, it is also possible to be, by making the rotation of wafer W stop or making wafer W to push up by coating liquid will not be thrown out ofMain surface exposure degree rotating speed come make wafer W rotate, to promote push up coating liquid volatilization.
Then, in the 1st liquid processing unit 14, the 1st output processing (step S107) is carried out.In the 1st output processing,Wafer W is taken out from the 1st liquid processing unit 14 and is delivered to mounting portion 10 by base board delivery device 111, and by wafer W be accommodated in byIt is placed on the load-bearing part C of mounting portion 10.
At this point, the Cu wirings 102 exposed in wafer W (are joined in the short time after dry ecthing by the covering of top coat applying filmAccording to Fig. 1 C).That is, Cu wirings 102 become the state that completely cut off with extraneous air, thus will not be by the harmful effect aoxidized etc..
Thus, using the base plate processing system 1 of the 1st embodiment, played from after dry ecthing due to that need not be used to abide byThe time management of the Q-time until terminating is cleaned, therefore productivity can be improved.
The wafer W for being accommodated in load-bearing part C is conveyed from the 1st processing unit 2 to the mounting portion 16 of the 2nd processing unit 3.ItAfterwards, wafer W is taken out using the base board delivery device 171 of the 2nd processing unit 3 (with reference to Fig. 4) from load-bearing part C, and wafer W is passed through2nd liquid processing unit 19 is input to by junction 172, base board delivery device 181.
In the 2nd liquid processing unit 19, first, it is removed liquid supply processing (step S108).It is supplied in the removal liquidIn processing, nozzle 81b is made to be located at the overcentre of wafer W (with reference to Fig. 7).Later, by the way that valve 84b is opened the stipulated time, fromAnd alkaline developer of the supply as removal liquid on the wafer W from nozzle 81b to rotation.The top coat being formed in as a result, on wafer W is appliedFilm is peeling-off and dissolves and is removed from wafer W.
At this point, the reaction product P remained on wafer W is removed from wafer W and removal.In addition, at this point, due to waferW and reaction product P generates the interface electromotive force of identical polar, therefore wafer W and reaction product P repels, anti-to preventAnswer product P again to attachments such as wafer W.
In addition, the corrosion inhibitor containing the corrosion for being useful for preventing Cu wirings 102 in alkaline developer.Therefore, even if alkali developmentLiquid is attached to Cu wirings 102, can also inhibit the corrosion of Cu wirings 102.Thus, using the processing substrate system of the 1st embodimentSystem 1 can inhibit to remove top coat applying film while to damage caused by Cu wirings 102.
Then, in the 2nd liquid processing unit 19, liquid processing (step S109) is carried out.In liquid processing, make nozzle81a is located at the overcentre of wafer W (with reference to Fig. 7).Later, DHF is supplied to wafer W from nozzle 81a.It is supplied on wafer WDHF extends under the action of the centrifugal force that the rotation with wafer W generates in the main surface of wafer W.
In this way, by after removal liquid supply processing, remove and carry out liquid processing after top coat applying film, in the presence of not havingThe feelings for the reaction product P (especially, the smaller reaction product P of grain size) that can be completely removed by removing top coat applying filmUnder condition, reaction product P can be removed.In this case, compared with common liquid cleans, can also inhibit to waferReaction product P is more effectively removed while the erosion of W.If in addition, can fully be removed using removal liquid supply processingReaction product P can also then omit liquid processing, the i.e. wet-cleaning of step S109.
After completing liquid processing, in the 2nd liquid processing unit 19, rush from nozzle 81c to wafer W supply DIWWash the flushing processing of the main surface of wafer W.The reaction product P being suspended in as a result, in dissolved top coat applying film, alkaline developerIt is removed from wafer W together with DIW.In addition, after completing flushing processing, in the 2nd liquid processing unit 19, dried as followsProcessing：Rotating speed by increasing wafer W at the appointed time throws away the DIW for the main surface for remaining in wafer W, makes wafer WIt is dry.Later, stop the rotation of wafer W.
Then, in the 2nd liquid processing unit 19, the 2nd output processing (step S110) is carried out.In the 2nd output processing,Wafer W is taken out from the 2nd liquid processing unit 19 using base board delivery device 181 (with reference to Fig. 4), and by wafer W via junction172 and base board delivery device 171 be accommodated on the load-bearing part C for being placed in mounting portion 16.After completing the 2nd output processing,1 wafer W a series of processing substrates carried out are terminated.
As described above, the base plate processing system 1 of the 1st embodiment (is equivalent to place including mounting portion 10, liquid supply unit 40_2Manage an example of liquid supply unit) and base board delivery device 111.Mounting portion 10 can store multiple wafer W's for loadingLoad-bearing part C.It is that liquid supply unit 40_2 is used to expose at least part for being formed in internal Cu wirings 102, after dry ecthingOr the wafer W after ashing supplies top coating liquid containing volatile ingredient, as the treatment fluid for forming film on wafer W.Base board delivery device 111 is used to push up the wafer W after coating liquid is cured or hardened because of the volatilization of volatile ingredient to mounting portion 10It conveys and is accommodated on the load-bearing part C for being placed in mounting portion 10.
Thus, using the base plate processing system 1 of the 1st embodiment, be easy to carry out playing cleaning from the exposing of Cu wirings 102 beQ-time management only, so as to improve productivity.
2nd embodiment
In addition, in the manufacturing process of semiconductor, sometimes the back side of wafer W is carried out the back side process such as cleaning.ButIn this case, it is possible to because of the main table for the wafer W that disperses or spread to the main surface of wafer W for the cleaning solution etc. of back side processFace and the main surface for polluting wafer W.
Accordingly it is also possible to be, by being pushed up after the formation top coat applying film in the main surface of wafer W, that is in utilizationCoated film protects the back side process that wafer W is carried out in the state of the main surface of wafer W, to prevent wafer W main surface dirtDye.
Illustrate the point with reference to Fig. 9 A and Fig. 9 B.Fig. 9 A and Fig. 9 B are the figures for an example for indicating Wafer Backside Cleaning processing.
As shown in Figure 9 A, fluid supply unit 32 possessed by the 1st liquid processing unit 14A is via valve 33 and N234 phase of supply sourceConnection, and be also connected with SC1 supply sources 36 via valve 35.The fluid supply unit 32 is used for will be from N2Supply source 34 suppliedThe N come2Gas supplies to the back side of wafer W and will supply the SC1 (ammonia and hydrogen peroxide solution) to come from SC1 supply sources 36It is supplied to the back side of wafer W.
1st liquid processing unit 14A is after the processing for having carried out step S106 shown in Fig. 8, i.e. in the entire master of wafer WIt is formed after top coat applying film on surface, carries out Wafer Backside Cleaning processing shown in Fig. 9 B.
In Wafer Backside Cleaning processing, by making valve 35 open the stipulated time, to from fluid supply unit 32 to rotationThe back side of wafer W supplies SC1.The back side of cleaning wafer W as a result,.
In this way, by the back side of cleaning wafer W in the state that the entire main surface of wafer W is covered by top coat applying film, i.e.,Make cleaning solution in overleaf cleaning treatment disperse out, also cleaning solution can be prevented to be attached in the main surface of wafer W and polluteThe main surface of wafer W.In addition, the main surface of wafer W can be prevented from polluting because of the sprawling of cleaning solution.
In Fig. 9 A and Fig. 9 B, shows as Wafer Backside Cleaning processing and carry out supplying the cleanings such as SC1 to the back side of wafer WThe example when processing of liquid, but Wafer Backside Cleaning processing is not limited to above-mentioned processing.Can also be, as Wafer Backside Cleaning handle intoRow is such as the scouring (Japanese for utilizing cleaning body brush：ス Network ラ Block is cleaned).
Illustrated using Figure 10 as Wafer Backside Cleaning processing and example when being cleaned.Figure 10 is to indicate that Wafer Backside Cleaning is handledAnother example figure.
In the case where being cleaned as Wafer Backside Cleaning processing, in the 1st liquid processing unit 14B shown in Fig. 10,First, the processing of step S101~step S106 shown in Fig. 8 is carried out.
Then, utilizing base board delivery device 111 by wafer W from after temporarily taking out the 1st liquid processing unit 14B, it will be brilliantCircle W is conveyed to switching mechanism (not shown).Then, the surface of wafer W and the back side are overturn using the switching mechanism, is utilized laterWafer W is again inputted into the 1st liquid processing unit 14B by base board delivery device 111.In addition, switching mechanism is set on the such as the 1st processingThe treating stations 6 of device 2.As the structure of switching mechanism, any known technology can be used.
Then, as shown in Figure 10, in the 1st liquid processing unit 14B, 30 holding surface of substrate holding mechanism and the back side are utilizedWafer W after overturning is simultaneously rotated, and later, is cleaned to the back side of wafer W using brush 500.Specifically,In 1 liquid processing unit 14B, by making brush 500 move in the state of so that the back face of the brush 500 and wafer W of rotation is touchedIt is dynamic, to which removal is attached to the foreign matter at the back side of wafer W.
At this point, the entire main surface of wafer W becomes the state covered by top coat applying film.Therefore, it is not necessary to worry from wafer W'sForeign matter after the removal of the back side is attached to the main surface of wafer W.In addition it is also possible to be to supply N from fluid supply unit 322Gas etc.Fluid prevents the foreign matter to be attached to top coat applying film.
It is exported from the 1st liquid processing unit 14B using base board delivery device 111 by the wafer W after cleaning is completed, and using notThe switching mechanism of diagram makes wafer W overturn again, later, wafer W is accommodated in load-bearing part C.
In addition, herein, having used brush 500, but can also be cleaned using other cleaning bodies such as sponge.
Alternatively, it is also possible to using blow cluster gas to the back side of wafer W remove the back sides wafer W particle processing asWafer Backside Cleaning processing.1 illustrates the point referring to Fig.1.Figure 11 is the figure for another example for indicating Wafer Backside Cleaning processing.
As shown in figure 11, the 1st liquid processing unit 14C has nozzle 600.Nozzle 600 is used as cleaning use by high-pressure injectionGas carbon dioxide, to by adiabatic expansion generate be used as purge gas atom or molecule aggregation gasCluster.
Spray nozzle part 600 includes balancing gate pit 601, which is formed as example substantially justifyingBarrel shape.The lower end of the balancing gate pit 601 is configured to throttle 602.The throttle 602 with going downward it is expandingGas diffusion portion 603 is connected.The opening bore of throttle 602 is, for example, 0.1mm or so.
The upper end of balancing gate pit 601 is connected with the one end of gas supplying path 604, the gas supplying path 604 warpIt is connected with carbon dioxide supply source 606 by pressure-regulating valve 605.
In the 1st liquid processing unit 14C, located as follows by processing step identical with when carrying out above-mentioned scouringReason：After making to be formed with the wafer W overturnings of top coat applying film, wafer W is made to be rotated in the case where being kept by substrate holding mechanism 30.Then, in the 1st liquid processing unit 14C, with the high pressure of the pressure in the chamber 20 than the 1st liquid processing unit 14C to nozzle600 supply carbon dioxide.When carbon dioxide is sprayed from nozzle 600 into chamber 20, under the action of adiabatic expansion drasticallyCondensation temperature is cooled to hereinafter, to which molecule M1 is combined into each other by Van der Waals force as the cluster gas as aggregationM2。
Cluster gas M2 is vertically sprayed towards the back side of wafer W, to blowing away the foreign matter for being attached to the back sides wafer WRemove the foreign matter.At this point, the entire main surface of wafer W becomes the state covered by top coat applying film.Therefore, it is not necessary to worry from waferForeign matter after the back side removal of W is attached to the main surface of wafer W.
Using base board delivery device 111 by the wafer W after completing the cleaning based on cluster gas M2 from the 1st liquid processing unit14C is exported, and so that wafer W is overturn again using switching mechanism (not shown), and wafer W is accommodated in load-bearing part C later.
In addition, other than above-mentioned processing, Wafer Backside Cleaning processing can also be the two-fluid for example using two-fluid spray nozzleIt cleans, using the ultrasonic cleaning etc. of ultrasonic oscillator etc., which makes cleaning solution atomization using gas and will sprayCleaning solution after atomization is blowed to the back side of wafer W.
In addition, to be not limited to the back side clear for the processing carried out in the state that the main surface of wafer W is covered by top coat applying filmProcessing is washed, can also be such as the etching process being etched come the back side to wafer W, inclined plane part using liquid.At etchingReason is the processing using oxide film dissolving of making a return journey such as hydrofluoric acid (HF).It is covered by top coat applying film by the main surface in wafer WIn the state of be etched, even if the back side of liquid from wafer W spread to main surface side, the main surface of wafer W is inIn the state of being protected by top coat applying film, therefore it will not be etched.In this way, since etching area is determined using top coat applying film,Therefore, it is possible to precisely be etched.
In addition, the processing carried out in the state that the main surface of wafer W is covered by top coat applying film can also be using grindingThe milled processed that brush is ground come the back side to wafer W, inclined plane part.
In this way, by the state that the main surface of wafer W is covered by top coat applying film to another face of wafer W atReason, can handle another face of wafer W while preventing the pollution of main surface of wafer W.
In the above example, illustrate that the 1st liquid processing unit liquid processing units of 14A~the 1st 14C is equivalent to another surface treatmentExample when one example in portion.That is, in the above example, illustrating the 1st liquid processing unit liquid processing units of 14A~the 1st 14CThe example not only to form a film when Wafer Backside Cleaning processing is handled but also carried out with treatment fluid supply.But the 1st processing unit 2Can also have relative to 14 Wafer Backside Cleaning unit independent, for carrying out Wafer Backside Cleaning processing of the 1st liquid processing unit.
In addition, another surface treatment such as Wafer Backside Cleaning processing can also carry out in the 2nd processing unit 3.In this case, bothThe nozzle of Wafer Backside Cleaning, brush can be assembled in the 2nd liquid processing unit 19, it can also will be relative to the 2nd liquid processing unit19 independent back side process units are set to the 2nd processing unit 3.
3rd embodiment
In addition, for form a film with treatment fluid supply processing, removal liquid supply processing structure can also after be installed onExisting pretreating device, after-treatment device without above structure.In the 3rd embodiment, illustrate the point.Figure 12 is tableShow the figure of the outline structure of the 1st processing unit of the 3rd embodiment.
As shown in figure 12, the 1st processing unit 2A includes the 1st component 2A1, the 2nd component 2A2 and linking part 2A3.
1st component 2A1 includes input/output station 5 and treating stations 6.1st processing of input/output station 5 and the 1st embodimentInput/output station 5 possessed by device 2 is identical, therefore, omits explanation herein.
Multiple dry ecthing units 12 are configured in the treating stations 6 of the 1st component 2A1.In addition, the with the 1st embodiment the 1stUnlike the treating stations 6 of processing unit 2, the 1st liquid processing unit 14 is not configured in the treating stations 6 of the 1st component 2A1.
2nd component 2A2 includes delivery section 11 ' and multiple 1st liquid processing units 14.Delivery section 11 ' has to be conveyed with substrate111 identical base board delivery device 112 of device carries out crystalline substance using the base board delivery device 112 relative to the 1st liquid processing unit 14The input and output of circle W.
Linking part 2A3 is for the delivery section 11 ' of the delivery section 11 of the 1st component 2A1 and the 2nd component 2A2 to be connected.The companyKnot 2A3 has the inner space with atmospheric isolation.Inner space is full of such as N2The non-active gas such as gas and with big air boundAbsolutely.In addition, being equipped with mounting table (not shown) in inner space.
In the 1st processing unit 2A, using base board delivery device 111 will complete dry ecthing unit 12 at treatedWafer W takes out from dry ecthing unit 12, later, wafer W is placed in the mounting table (not shown) of linking part 2A3.
The wafer W after being placed in mounting table is taken out from mounting table using the base board delivery device 112 of the 2nd component 2A2, itAfterwards, wafer W is delivered to the 1st liquid processing unit 14, step S102~step shown in Fig. 8 is carried out using the 1st liquid processing unit 14The processing of rapid S106.Top coat applying film is formed in the main surface of wafer W as a result,.
Later, wafer W is taken out from the 1st liquid processing unit 14 using base board delivery device 112, later by wafer W viaThe mounting table self-reference substrate conveying device 112 (not shown) of linking part 2A3 is handed off to base board delivery device 111, is conveyed using substrateWafer W is accommodated on the load-bearing part C for being placed in mounting portion 10 by device 111.
In this way, form a film with treatment fluid supply processing the 1st liquid processing unit 14 can also be configured at relative toMounting portion 10, base board delivery device 111 and dry ecthing unit 12 the 1st component 2A1 it is independent and via linking part 2A3 and thisThe 2nd component 2A2 that 1 component 2A1 is connected.That is, the 1st liquid processing unit 14 can also after be installed on it is single without the processing of the 1st liquidThe existing pretreating device of member 14.
In this case, by that by the inner space of linking part 2A3 and atmospheric isolation, can inhibit after by dry ecthingThe oxidation for the Cu wirings 102 that wafer W exposes when being conveyed from the 1st component 2A1 to the 2nd component 2A2 by dry ecthing.
In addition, in the same manner as the inner space of linking part 2A3, the delivery section 11,11 ' of the 1st component 2A1 and the 2nd component 2A2It is interior can also be by being full of such as N2The modes such as gas and and atmospheric isolation.Thereby, it is possible to further suppress the Cu exposed to matchThe oxidation of line 102.
In addition, in the above example, using linking part 2A3 by the defeated of the delivery section 11 of the 1st component 2A1 and the 2nd component 2A2Portion 11 ' is sent to link up.But the 1st processing unit 2A can also have such as the doing the 1st component 2A1 using linking part 2A3Structure made of the 1st liquid processing unit 14 of etching unit 12 and the 2nd component 2A2 are connected.In this case, as long as will not schemeThe base board delivery device shown is configured in the inner space of linking part 2A3 and using the base board delivery device in dry ecthing unit 12Wafer W is conveyed between the 1st liquid processing unit 14.In addition, in this case, the 2nd component 2A2 can not also have conveyingPortion 11 '.
Next, referring to Fig.1 3 explanation the 2nd processing units variation.Figure 13 is the 2nd processing for indicating the 3rd embodimentThe figure of the outline structure of device.
As shown in figure 13, the 2nd processing unit 3A includes the 1st component 3A1, the 2nd component 3A2 and linking part 3A3.
1st component 3A1 includes input/output station 7 and treating stations 8.2nd processing of input/output station 7 and the 1st embodimentInput/output station 7 possessed by device 3 is identical.
Multiple 2nd liquid processing unit 19A are configured in the treating stations 8 of the 1st component 3A1.2nd liquid processing unit 19A toolsThere is the structure other than handling relevant structure with removal liquid supply in the 2nd liquid processing unit 19 of the 1st embodiment, haveIt is the structure other than nozzle 81b, valve 84b and alkaline developer supply source 85b for body.
2nd component 3A2 includes delivery section 18 ' and multiple removal units 700.Delivery section 18 ' has and base board delivery device181 identical base board delivery devices 182 carry out the defeated of wafer W using the base board delivery device 182 relative to removal unit 700Enter output.
Removal unit 700 have the 1st embodiment the 2nd liquid processing unit 19 in addition to nozzle 81a, valve 84a, DHFStructure except supply source 85a, nozzle 81c, valve 84c and DIW supply source 85c.
Linking part 3A3 is for the delivery section 18 ' of the delivery section 18 of the 1st component 3A1 and the 2nd component 3A2 to be connected.The companyKnot 3A3 has the inner space with atmospheric isolation.Inner space is full of such as N2The non-active gas such as gas and with big air boundAbsolutely.In addition, being equipped with mounting table (not shown) in inner space.
In the 2nd processing unit 3A, by wafer W from input/output station 7 be delivered to treating stations 8 delivery section 18 itAfterwards, wafer W is placed in the mounting table (not shown) of linking part 3A3 using base board delivery device 181.
The wafer W for being placed in mounting table is taken out it from mounting table in the base board delivery device 182 using the 2nd component 3A2Afterwards, wafer W is delivered to removal unit 700, being removed liquid supply using removal unit 700 handles (the step S108 of Fig. 8).Top coat applying film is removed from the main surface of wafer W as a result,.
Later, wafer W is taken out from removal unit 700 using base board delivery device 182, later, by wafer W via connectionThe mounting table self-reference substrate conveying device 182 (not shown) of portion 3A3 is handed off to base board delivery device 181.Then, it is conveyed using substrateWafer W is delivered to the 2nd liquid processing unit 19A by device 181, using the 2nd liquid processing unit 19A carry out liquid processing (Fig. 8'sStep S109) processing after, using the 2nd output processing (the step S110 of Fig. 8) wafer W is accommodated in load-bearing part C.
In this way, being removed the removal unit 700 of liquid supply processing can also be configured at relative to mounting portion 16, baseThe 1st component 3A1 of plate conveying device 181 and the 2nd liquid processing unit 19A for carrying out liquid processing are independent and via connectionThe 2nd component 3A2 that portion 3A3 is connected with the 1st component 3A1.That is, removal unit 700 can also after be installed on without removalThe existing after-treatment device of unit 700.
In this case, by that by the inner space of linking part 3A3 and atmospheric isolation, can inhibit after handling removalThe oxidations of Cu wirings 102 from the 2nd component 3A2 to the 1st component 3A1 that expose when being conveyed from of wafer W.In addition, in the 2nd processing dressIt sets in 3A, it can also the delivery section 18,18 ' of the 1st component 3A1 and the 2nd component 3A2 is interior and atmospheric isolation.
In addition, the 2nd component 3A2 can also have input/output station identical with input/output station 7.In this case, willThe input/output station for being formed with wafer W from the 2nd component 3A2 of top coat applying film is input in the 2nd component 3A2, single using removalMember 700 is conveyed via linking part 3A3 to the 1st component 3A1 from after wafer W removal top coat applying films, by wafer W.As a result, canEnough improve the transfer efficiency of wafer W.
4th embodiment
In the above-described embodiment, it illustrates by the way that the alkaline developer of removal liquid will be used as to be supplied by eleutheromorph to top coat applying filmExample when circle W removal top coat applying films.But the method for removing top coat applying film from wafer W is not limited to above-mentioned example.WithUnder, illustrate another example that the removal processing of top coat applying film is removed from wafer W.Figure 14 is the 2nd processing for indicating the 4th embodimentThe figure of the outline structure of device.
As shown in figure 14, include that the processing of multiple 2nd liquid is single in the treating stations 8 of the 2nd processing unit 3B of the 4th embodimentFirst 19B and multiple removal units 710.
2nd liquid processing unit 19B has structure identical with the 2nd liquid processing unit 19A of the 3rd embodiment.That is, the 2ndLiquid processing unit 19B have the 1st embodiment the 2nd liquid processing unit 19 in addition to as to removal liquid supply processing it is relatedStructure nozzle 81b, valve 84b and the structure except alkaline developer supply source 85b.
Removal unit 710 removes the film for being formed in wafer W by distilling.Herein, referring to Fig.1 5 illustrate the removal unit710 structure.Figure 15 is the schematic diagram of an example of the structure for the removal unit 710 for indicating the 4th embodiment.
In addition, in the 4th embodiment, the solution of sublimate is used as film forming treatment fluid.As distillationProperty substance, can use such as ammonium silicofluoride, camphor or naphthalene.Film forming is with treatment fluid by the way that above-mentioned sublimate to be dissolved inIt is made in volatile solvent such as IPA.The film forming uses treatment fluid to be cured or hardened by so that the IPA as solvent is volatilized,To form film.In addition, in film forming treatment fluid, other than sublimate and IPA, pure water can also be contained.
As shown in figure 15, removal unit 710 has 701 upper table of heating plate 701 and self-heating plate of built-in having heaters 702Face multiple fulcrum posts 703 outstanding.Fulcrum post 703 supports the lower surface peripheral part of wafer W.As a result, the lower surface of wafer W withSmaller gap is formed between the upper surface of heating plate 701.
The exhaust cover 704 for capableing of lifting moving is equipped in the top of heating plate 701.Exhaust cover 704 has in centerOpening portion.The opening portion is connected with exhaust pipe 705, and sublimate retracting device 706 and pump are provided on exhaust pipe 705707.In addition, as sublimate retracting device 706, the various well known sublimates of following form etc. can be used to returnReceiving apparatus：Make sublimate set on for being vented the form being precipitated on the through-flow indoor coldplate of chamber；Through-flow for being ventedChamber in make the form that cooling fluid is in contact with the gas of sublimate.
In the removal unit 710, after wafer W is placed on fulcrum post 703 using base board delivery device 181,Exhaust is set to be declined with cover 704 and form processing space between cover 704 and heating plate 701 being vented.Then, in removal unitIt is empty come the top to wafer W by the way that the pump 707 on the exhaust pipe 705 being connected with cover 704 with exhaust is arranged on one side in 710Between aspirated, wafer W is heated to the temperature higher than the sublimation temperature of sublimate using the heating plate 701 after heating on one sideDegree.
The sublimate on wafer W is set to distil and remove the sublimate from wafer W as a result,.At this point, distillation andIt is recycled as sublimate the being sublimated property substance retracting device 706 after gas, to recycle.Later, defeated using substrateDevice 181 is sent to take out wafer W from removal unit 710 and convey wafer W to the 2nd liquid processing unit 19B.
In this way, in the 2nd processing unit 3B, it can also be used as removal processing and be handled as follows：By the way that wafer W is addedThe high temperature of the hot sublimation temperature to the sublimate than containing in film forming treatment fluid, to it will be cured or hardened afterFilm forming treatment fluid is removed from wafer W.It in addition, sublimation method herein is an example, can also be configured to, utilize gas etc.Do not directly heat substrate and directly heat sublimate itself.In addition, according to the difference of the sublimation temperature of sublimate,It can be omitted heat treatment.
5th embodiment
In the above-described embodiment, after as the film forming treatment fluid after being cured or hardened from after wafer W removalsProcessing, the case where illustrating to carry out liquid processing.But post-processing is not limited to liquid processing.In the 5th embodiment,6 explanations are as post-processing and example when carrying out dry etch process referring to Fig.1.Figure 16 is the 2nd processing for indicating the 5th embodimentThe figure of the outline structure of device.
As shown in figure 16, include multiple removal units 720 in the treating stations 8 of the 2nd processing unit 3C of the 5th embodimentWith multiple dry ecthing units 800.
Removal unit 720 has structure identical with the removal unit 710 of the 4th embodiment, for being incited somebody to action by distillingFilm forming treatment fluid after being cured or hardened is removed from wafer W.In addition it is also possible to be, removal unit 720 has to be implemented with the 3rdThe 700 identical structure of removal unit of mode, the film forming treatment fluid after being cured or hardened using the removal liquid such as alkaline developerIt is removed from wafer W.
Dry ecthing unit 800 has structure identical with the dry ecthing unit 12 of the 1st embodiment, for single using removalMember 720 to eliminating the film forming after being cured or hardened carries out dry etch process with the wafer W after treatment fluid.Utilize the 2nd outputWafer W after dry etch process is accommodated in load-bearing part C by processing (the step S110 of Fig. 8).
In this way, in the 2nd processing unit 3C, it can also be used as post-processing and carry out dry etch process.That is, in Qian ChuDry etch process is carried out in reason and further carries out the technique of dry etch process in post-processing later, can also be added above-mentionedFilm forming treatment fluid supplies processing and removal is handled.
In addition, as such technique, it can enumerate and for example as preceding processing be etched hard maskThe technique that the main etching being etched to the machined membrane on wafer W is carried out after hard mask etching, as post-processing.Pass throughAbove-mentioned film forming treatment fluid is supplied into processing and removal processing is applied to the technique, the reaction life after capable of preventing hard mask from etchingAt the dimensionally stable of the growth of object P or machined membrane when making main etching.
Is carried out as removal processing it is being illustrated in the 4th embodiment, using distilling come the case where being removedUnder, processing can also be removed in dry ecthing unit 800.
6th embodiment
In the above-described embodiment, it illustrates that the film forming to the wafer W supply film forming treatment fluids after pre-treatment will be used forThe removal processing for supplying processing with treatment fluid and being removed from wafer W for the film forming treatment fluid after being cured or hardened is applied toDry etch process is carried out as pre-treatment and the feelings of the technique of liquid processing or dry etch process are carried out as post-processingCondition.But film forming treatment fluid supply processing and removal handle and are not limited to the application to above-mentioned technique, additionally it is possible to be applied in FEOL(Front End Of Line：Preceding working procedure), MEOL (Middle End Of Line：Middle procedure) and BEOL (BuckEnd Of Line：Later process) in carry out various techniques.
Therefore, in the 6th embodiment, 7 explanation applications referring to Fig.1 have film forming treatment fluid supply processing and removal processingTechnique.Figure 17 is the figure for indicating the example using the technique for having film forming treatment fluid supply processing and removal processing.
Film forming treatment fluid supply processing and removal processing can be applied to need to implement atmosphere to the wafer W after pre-treatmentThe technique of management or time management.Herein, atmosphere management refers to that the atmosphere of the wafer W after encirclement pre-treatment is for example maintained non-Reactive atmosphere.In addition, time management refers to Q-time management, it is that limit is arranged to the time until playing post-processing from after pre-treatmentIt makes and is managed.
That is, being following technique using there is the technique that film forming supplies processing and removal processing with treatment fluid：Due to makingThe processing for for pre-treatment formed part that can be rotten because being exposed to air on the surface of wafer W, on needingState such atmosphere management, time management.By handling the application film forming use reason liquid supply processing of such technique and removal,Can utilize be cured or hardened after film forming treatment fluid covering can be rotten due to being exposed to air part and make the part withAtmospheric isolation therefore, there is no need to atmosphere management and time management after pre-treatment.
As shown in figure 17, the technique for having film forming treatment fluid supply processing and removal processing as application, has in dry corrosionCarve the technique that (pre-treatment) carries out wet-cleaning (post-processing) afterwards.As such technique, can enumerate for example in the 1st embodiment partyThe technique illustrated in formula, that is, (be not limited to Cu making the metal layer inside wafer W using dry ecthing, Co can also be contained(cobalt), W (tungsten) etc.) expose the technique cleaned after being carried out later to wafer W using liquid.In addition, in addition to this, can also enumerateGo out：Si, SiO are being formed using dry ecthing pattern2Or SiN etc. or polygate electrodes or HKMG (High-k/Metal Gate：High dielectric metal gate) etc. after wafer W is carried out using liquid after clean technique, after using dry ecthing formation contact holeThe technique etc. cleaned after being carried out to wafer W using liquid.By to such technique application film forming use manage liquid supply processing andRemoval is handled, for example, can inhibit the growth of the reaction product after pre-treatment.In addition, pre-treatment can not only be dry ecthing,It equally also can be ashing.
In addition, there is the technique of film forming treatment fluid supply processing and removal processing as application, have at dry ecthing (preceding placeReason) afterwards carry out dry ecthing (post-processing) technique.As such technique, it can enumerate and for example illustrate in the 5th embodimentTechnique.In this case, the use that can also be formed a film by application manages liquid supply processing and removal processing to inhibit pre-treatmentThe growth of reaction product afterwards.
In addition, there is the technique of film forming treatment fluid supply processing and removal processing as application, have at film forming (preceding placeReason) after formed a film the technique of (post-processing).As such technique, can enumerate for example on wafer W carry out TiN layer atCarry out also on wafer W after film the technique of W layer of film forming, on wafer W after the film forming of TaN layers of progress also on wafer WCarry out the technique etc. of Cu layers of film forming.
Herein, among the film formation device for carrying out film process, the film formation device for pre-treatment is configured at the 1st processing dressThe treating stations set, the film formation device for post-processing are configured at the treating stations of the 2nd processing unit.As film formation device, can makeWith such as plasma CVD equipment, but other any well known film formation devices can also be used.
In addition, using plasma CVD equipment in the film formation device as post-processing and being carried out as removal processingIt is being illustrated in the 4th embodiment, using distillation come in the case of being removed, can in plasma CVD equipment intoRow removal is handled.In addition, using the feelings of the film formation device to form a film using wet processing as the film formation device of pre-treatmentUnder condition, it can form a film in the film formation device and be handled with treatment fluid supply.
In addition, there is the technique of film forming treatment fluid supply processing and removal processing as application, have (preceding in wet-cleaningProcessing) after formed a film the technique of (post-processing).As such technique, can enumerate for example using liquid to wafer W intoRow before cleaning and from wafer W remove the foreign matters such as oxide film dissolving, particle after in the W-shaped technique at metal films such as barrier metals of waferDeng.Processing and removal processing are supplied by managing liquid using film forming use to such technique, such as the gold after film forming can be preventedBelong to the oxidation of film or particle is prevented to be attached to wafer W.
Treatment fluid supply processing and removal processing is being used to be applied to carry out the work of wet-cleaning as preceding handle film formingIn the case of skill, is handled as removal, preferably carry out removal illustrated in the 4th embodiment, based on distillation.
That is, film forming processing is formed by supplying processing with treatment fluid by forming a film after wet-cleaning on wafer WThe film of liquid, pattern collapse (Japanese when can prevent dry：パ タ ー Application falls bad).Also, by being utilized in being handled in removalDistillation removes the film of film forming treatment fluid, can in the case where not making pattern collapse by the film of film forming treatment fluid from waferW is removed.
Carry out illustrated in the 2nd embodiment another surface treatment this point, illustrated in the 3rd embodiment the 1stThe removal of the structure and the utilization distillation illustrated in the 4th embodiment of processing unit and the 2nd processing unit handles equal energyEnough it is suitably applied to each technique shown in Figure 17.
Other embodiment
In the above-described embodiment, illustrate will to push up coating liquid, when the solution of sublimate is used as film forming treatment fluidExample, but film forming with treatment fluid be not limited to top coating liquid, sublimate solution.
For example, film forming treatment fluid can also be the treatment fluid containing phenolic resin.The phenolic resin also with above-mentioned propyleneAcid resin can similarly cause curing shrinkage, therefore, on applying drawing force this aspect to reaction product P, contain phenolic resinTreatment fluid with top coating liquid in the same manner as it is effective.
As the film forming treatment fluid containing phenolic resin, there is such as resist liquid.Resist liquid is in wafer WThe upper film forming treatment fluid for forming resist film.Specifically, containing line style (novolak) phenolic resin in resist liquid.
In addition, in the case where resist liquid is used as film forming treatment fluid, as long as resist liquid will be made to dissolveDiluent is used as removal liquid.In the case where diluent is used as removal liquid, capable of omitting the supply of removal liquid, treatedFlushing is handled.In addition, in the case where resist liquid is used as film forming treatment fluid, it can also be to being formed on wafer WResist film carries out supplying removal liquid after the exposure-processeds such as whole surface exposure.In this case, liquid is removed either aobviousShadow liquid can also be diluent.
As long as the resin of the synthetic resin meeting curing shrinkage contained in film forming treatment fluid, is not limited toState acrylic resin, phenolic resin.For example, the synthetic resin contained in film forming treatment fluid can also be epoxy resin, threeCymel, unsaturated polyester resin, alkyd resin, polyurethane, polyimides, polyethylene, polypropylene, gathers urea resinVinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene (PTFE), acrylonitrile-butadiene-styrene (ABS) (acrylonitrileButadiene styrene) resin, acrylonitrile-styrene (acrylonitrile-styrene) resin, polyamide, nylon,Polyformaldehyde, makrolon, Noryl, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide(polyphenylene sulfide), polysulfones, polyether-ether-ketone (polyether ether ketone) and polyamide-acyl are sub-Amine etc..
In addition, as film forming treatment fluid, antireflection film liquid can also be used.Antireflection film liquid refers in wafer WThe upper film forming treatment fluid for forming antireflection film.In addition, antireflection film refers to making transmission for reducing the surface reflection of wafer WThe increased protective film of rate.In the case where the antireflection film liquid is used as film forming treatment fluid, antireflection film liquid can be madeThe DIW of dissolving is used as removal liquid.
In addition, film forming treatment fluid other than containing volatile ingredient and synthetic resin, can also also contain and be useful for making crystalline substanceThe defined liquid of circle W, the material constituted on wafer W or the foreign matter being attached on wafer W dissolving.Herein, " in wafer WThe material of upper composition " refers to such as Cu wirings 102, and " foreign matter being attached on wafer W " refers to such as reaction product P.In addition,As " defined liquid ", exist containing such as hydrogen fluoride, ammonium fluoride, hydrochloric acid, sulfuric acid, hydrogen peroxide, phosphoric acid, acetic acid, nitric acid, hydrogenThe aqueous solution etc. of amine-oxides and organic acid or ammonium fluoride.The surface of reaction product P is set to dissolve by using above-mentioned liquid,To make the adhesive force of reaction product P die down, therefore reaction product P can be made to become the state being easily removed.
Compared with the liquid in the common liquid cleaning cleaned merely with the chemical action of liquid, " defined medicineLiquid " uses under conditions of etch quantity is less.Therefore, compared with common liquid cleans, the erosion to wafer W can inhibitedWhile more effectively remove reaction product P.
In addition, in the above-described embodiment, example when illustrating for alkaline developer to be used as removal liquid, but remove liquid and also may be usedTo be that liquid made of hydrogen peroxide is added in alkaline developer.By the way that hydrogen peroxide is so added in alkaline developer, can inhibitCrystal column surface rough surface caused by due to alkaline developer.
In addition, removal liquid is either diluent, toluene, ethyl acetate class, ethyl alcohol class, glycols (propylene glycol list firstEther) etc. organic solvents, can also be the acid developers such as acetic acid, formic acid, glycolic (hydroxyacetic acid).
Also, removal liquid can also contain surfactant.Surfactant has the function of decrease surface tension, thereforeIt can inhibit reaction product P again to attachments such as wafer W.
In addition, in the above-described embodiment, illustrating when the metal wiring set on the inside of wafer W is Cu wirings 102Example, but metal wiring is not limited to Cu wirings 102.In this case, if in the removal liquid of top coat applying film containing withThe corresponding corrosion inhibitor of type of metal wiring.
In addition, in the above-described embodiment, the example when subject material being dry-etched is metal wiring is shown, but byThe subject material of dry ecthing, construction are not limited to metal wiring.In addition, the substrate processing method using same of the 1st embodiment can alsoThe reaction product generated after resist is being removed by ashing applied to removal.For example, to using resist pattern asMask and carry out ion implanting and using ashing removal resist after wafer cleaning it is also effective.
In addition, in the above-described embodiment, showing before film forming treatment fluid supply processing and at removal liquid supplyExample when liquid processing is carried out after reason, but liquid processing can also only before film forming treatment fluid supply processing or removeIt is carried out any one of after liquid supply processing.It is executed in addition, liquid processing is not necessary.
In addition, in the case where carrying out liquid processing after removing liquid supply processing, it both can be by the 1st liquid processing unit 14Possessed liquid supply unit 40_1 is set to the 2nd liquid processing unit 19, and the processing for carrying out liquid cleaning can also separately be arrangedUnit.
In addition, the structure of base plate processing system 1 is not limited to the above embodiment the structure of middle illustration.
For example, it is also possible to be set to the structure of liquid supply unit 80 possessed by the 2nd liquid processing unit 19 for completingWafer W until the processing of the step S107 of Fig. 8 carries out the another at film unit of film process.That is, can also be above-mentioned anotherAt removal top coat applying film in film unit.Alternatively, the treating stations 8 of the 2nd processing unit 3 can will be both set at film unit, it can alsoFilm process are carried out in the 2nd liquid processing unit 19.As a result, due to can be carried out at film forming immediately after removing top coat applying filmReason, therefore management Q-time can be further susceptible to.
Those skilled in the art can be readily derived further effect, variation.Therefore, it is of the invention more extensivelyForm be not limited to above such specific detailed content for indicating and recording and representative embodiment.Thus,The present invention can not depart from appended claims and the concept of recapitulative invention defined in its equivalentsIt is made various changes in the case of spirit or scope.
Reference sign
W, wafer；P, reaction product；1, base plate processing system；2, the 1st processing unit；3, the 2nd processing unit；4, it controlsDevice；12, dry ecthing unit；13, load lock；14, the 1st liquid processing unit；19, the 2nd liquid processing unit；40_1,40_2,80, liquid supply unit；101, wiring layer；102, Cu wirings；103, lining form；104, interlayer dielectric；106, via hole.